Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124885) > Сторінка 477 з 2082
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS3005S02LRHE6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTT 30V 500MA PGTSLP217Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 15pF @ 5V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: PG-TSLP-2-17 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
|
SAKXC2733X20F66LAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MCU - XC2700 FAMILYDigiKey Programmable: Not Verified Number of I/O: 48 Part Status: Active Supplier Device Package: PG-LQFP-64-24 Peripherals: I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Mounting Type: Surface Mount Package / Case: 64-LQFP Exposed Pad Packaging: Bulk Core Size: 16/32-Bit Data Converters: A/D 19x8/10/12b SAR Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 12K x 8 Program Memory Size: 160KB (160K x 8) Speed: 66MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SAKXC2734X40F80LAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MCU - XC2700 FAMILYDigiKey Programmable: Not Verified Number of I/O: 38 Part Status: Active Supplier Device Package: PG-LQFP-64-24 Peripherals: I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16/32-Bit Data Converters: A/D 9x8/10b SAR Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 42K x 8 Program Memory Size: 320KB (320K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Exposed Pad Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SAFXE162FN40F80LAAFXQSA1 | Infineon Technologies |
Description: 16-BIT FLASH RISC MCUDigiKey Programmable: Not Verified Number of I/O: 40 Part Status: Active Supplier Device Package: PG-LQFP-64-22 Peripherals: I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 9x8/10b SAR Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 42K x 8 Program Memory Size: 320KB (320K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Exposed Pad Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
SAK-XC2734X40F80LAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MCU - XC2700 FAMILYDigiKey Programmable: Not Verified Number of I/O: 38 Part Status: Active Supplier Device Package: PG-LQFP-64-24 Peripherals: I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16/32-Bit Data Converters: A/D 9x8/10b SAR Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 42K x 8 Program Memory Size: 320KB (320K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Exposed Pad Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SAKXC2733X20F66LRAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MCU - XC2700 FAMILYDigiKey Programmable: Not Verified Number of I/O: 48 Part Status: Active Supplier Device Package: PG-LQFP-64-24 Peripherals: I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16/32-Bit Data Converters: A/D 19x8/10/12b SAR Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 12K x 8 Program Memory Size: 160KB (160K x 8) Speed: 66MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Exposed Pad Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SAF-XE162FN40F80LAAFXQSA1 | Infineon Technologies |
Description: 16-BIT FLASH RISC MCUProgram Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 42K x 8 Program Memory Size: 320KB (320K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Exposed Pad Packaging: Bulk DigiKey Programmable: Not Verified Number of I/O: 40 Part Status: Active Supplier Device Package: PG-LQFP-64-22 Peripherals: I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 9x8/10b SAR Core Processor: C166SV2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
REFILD8150DC15ASMDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ILD8150Packaging: Bulk Features: Dimmable Voltage - Input: 8V ~ 80V Current - Output / Channel: 1.5A Utilized IC / Part: ILD8150 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Contents: Board(s) |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRF6722STR1PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 13A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6712STR1PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 17A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6729MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 31A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ MX Vgs(th) (Max) @ Id: 2.35V @ 150µA Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MX Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6714MTR1PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 29A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6715MTR1PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 34A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6720S2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 11A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DirectFET™ Isometric S1 Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 1.7W (Ta), 17W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric S1 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BB644E7904 | Infineon Technologies | Description: VARIABLE CAPACITANCE DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PSB2186PV1.1 | Infineon Technologies |
Description: ISAC-S TE ISDN ACCESS CONTROLLERNumber of Circuits: 1 Part Status: Active Supplier Device Package: P-DIP-40-2 Current - Supply: 17mA Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: 0°C ~ 70°C Interface: 4-Wire, IOM-2 Function: ISDN Mounting Type: Through Hole Package / Case: 40-DIP (0.600", 15.24mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IPB120N08S403ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 120A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 223µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IPB120N08S403ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 120A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 223µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BGSX22G6U10E6327XTSA1 | Infineon Technologies |
Description: IC RF SW DPDT 7.125GHZ ULGA10Supplier Device Package: PG-ULGA-10-1 Isolation: 20dB Test Frequency: 5.925GHz ~ 7.125GHz Frequency Range: 400MHz ~ 7.125GHz Insertion Loss: 0.85dB Voltage - Supply: 1.6V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) RF Type: 5G, Cellular, GSM, LTE, WCDMA Circuit: DPDT Mounting Type: Surface Mount Package / Case: 10-UFLGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||||||||
|
BGSX22G6U10E6327XTSA1 | Infineon Technologies |
Description: IC RF SW DPDT 7.125GHZ ULGA10Supplier Device Package: PG-ULGA-10-1 Isolation: 20dB Test Frequency: 5.925GHz ~ 7.125GHz Frequency Range: 400MHz ~ 7.125GHz Insertion Loss: 0.85dB Voltage - Supply: 1.6V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) RF Type: 5G, Cellular, GSM, LTE, WCDMA Circuit: DPDT Mounting Type: Surface Mount Package / Case: 10-UFLGA Packaging: Cut Tape (CT) |
на замовлення 3426 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IKB30N65ES5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 62A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 62 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 188 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IKB30N65ES5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 62A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 62 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 188 W |
на замовлення 1269 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
XMC1301T038F0032ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 38TSSOPPackaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 1947 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPB50R299CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 550V 12A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 550 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IPB50R250CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 550V 13A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 550 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 520µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
IMZA65R039M1HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET, PG-TO247Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +20V, -2V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-TO247-4-3 Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 91 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| FD600R06ME3_B11_S2 | Infineon Technologies |
Description: IGBT MOD 600V 600A 2250WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 2250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 60 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FF300R12KT3EHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 480A 1450W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Part Status: Not For New Designs Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
|
T720N16TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 1500A DO-200ABPackaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 720 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 1.8 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
T720N14TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 1500A DO-200AB |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | ||||||||||||||||
| 94-2518PBF | Infineon Technologies | Description: IC MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| F3L200R07PE4 | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTOInput Capacitance (Cies) @ Vce: 12.5 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 680 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 200 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO4-1-1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Level Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 3432 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
SPP04N50C3XKSA1 | Infineon Technologies |
Description: LOW POWER_LEGACYInput Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 560 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 3.9V @ 200µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BF 775 E6327 | Infineon Technologies |
Description: RF TRANS NPN 15V 5GHZ SOT23-3Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Frequency - Transition: 5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 45mA Power - Max: 280mW Gain: 10.5dB ~ 16dB Operating Temperature: 150°C (TJ) Part Status: Obsolete Supplier Device Package: PG-SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SAFC165HLF | Infineon Technologies |
Description: EMBEDDED UTAH, C166DigiKey Programmable: Not Verified Number of I/O: 72 Part Status: Active Supplier Device Package: PG-TQFP-144-7 Peripherals: PWM, WDT Connectivity: HDLC, IOM-2/PCM, IrDA, SSC, UART/USART Voltage - Supply (Vcc/Vdd): 2.97V ~ 3.63V Core Size: 16-Bit Core Processor: C166 Program Memory Type: ROM Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 3K x 8 Program Memory Size: 8MB (8M x 8) Speed: 36MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Packaging: Bulk |
на замовлення 31595 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRF7905TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SOPart Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.25V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF7905TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SOPart Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.25V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
IPI80N06S207AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO262-3Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO262-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLE4953C | Infineon Technologies | Description: HALL EFFECT SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
TLE4953CHAMA3 | Infineon Technologies |
Description: MAGNETIC SWITCH SPECIAL PURPOSEPackaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-2 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLE4953CHAMA3 | Infineon Technologies |
Description: MAGNETIC SWITCH SPECIAL PURPOSEPackaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-2 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
TLE4953HALA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-1Packaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-1 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-1 Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLE4953CBAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-2Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-2 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-2 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLE4955CE2AAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53Qualification: AEC-Q100 Grade: Automotive Part Status: Not For New Designs Test Condition: 25°C Supplier Device Package: PG-SSO-2-53 Current - Supply (Max): 8mA Current - Output (Max): 16mA Sensing Range: -30mT Trip, 30mT Release Technology: Hall Effect Voltage - Supply: 4V ~ 20V Operating Temperature: -40°C ~ 110°C Function: Special Purpose Mounting Type: Through Hole Polarization: North Pole, South Pole Output Type: PWM Package / Case: 2-SIP, SSO-2-53 Packaging: Bulk |
на замовлення 41772 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| TLE4955CE2AAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53Qualification: AEC-Q100 Grade: Automotive Part Status: Not For New Designs Test Condition: 25°C Supplier Device Package: PG-SSO-2-53 Current - Supply (Max): 8mA Current - Output (Max): 16mA Sensing Range: -30mT Trip, 30mT Release Technology: Hall Effect Voltage - Supply: 4V ~ 20V Operating Temperature: -40°C ~ 110°C Function: Special Purpose Mounting Type: Through Hole Polarization: North Pole, South Pole Output Type: PWM Package / Case: 2-SIP, SSO-2-53 Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| TLE4957CE6747HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SSO-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4957C2E6247HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SSO-3Packaging: Bulk Grade: Automotive Qualification: AEC-Q100 |
на замовлення 11780 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| TLE4957C2NE6747HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SSO-3Packaging: Bulk Part Status: Obsolete |
на замовлення 47800 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| TLE4957C2NE6747HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SSO-3Packaging: Tape & Box (TB) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4955HALA1 | Infineon Technologies |
Description: IC SPEED SENSOR MAGN PG-SSO-2Supplier Device Package: PG-SSO-2-53 Qualification: AEC-Q100 Grade: Automotive Mounting Type: Through Hole Package / Case: 2-SIP, SSO-2-53 Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
|
TLE4955CE41184AAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
| TLE4954CBE4XTMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4955CE4AAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| TLE4955E4HALA1 | Infineon Technologies | Description: IC SPEED SENSOR MAGN PG-SSO-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4955CE4807BAMA1 | Infineon Technologies | Description: IC SPEED SENSOR MAGN PG-SSO-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4955CE11184XAMA1 | Infineon Technologies | Description: SPEED & CURRENT SENSORS PG-SSO-2 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
|
CY62148ESL-55ZAXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32STSOPPackaging: Tray Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-sTSOP Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 1328 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PSB21493HV1.7 | Infineon Technologies |
Description: INCA-S CODECNumber of Circuits: 1 Part Status: Active Supplier Device Package: P-MQFP-144-8 Interface: IOM-2 Function: CODEC Mounting Type: Surface Mount Package / Case: 144-BQFP Packaging: Bulk |
на замовлення 793 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SAF-C167CS-LMCA+ | Infineon Technologies |
Description: LEGACY 16-BIT MCU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
C167SRLMHA | Infineon Technologies |
Description: LEGACY 16-BIT MCU Number of I/O: 111 Part Status: Active Supplier Device Package: P-MQFP-144-8 Peripherals: POR, PWM, WDT Connectivity: CANbus, EBI/EMI, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 16x10b Core Processor: C166 Program Memory Type: ROMless Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 4K x 8 Speed: 25MHz Mounting Type: Surface Mount Package / Case: 144-BQFP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| BAS3005S02LRHE6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTT 30V 500MA PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| SAKXC2733X20F66LAAKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Core Size: 16/32-Bit
Data Converters: A/D 19x8/10/12b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 66MHz
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Core Size: 16/32-Bit
Data Converters: A/D 19x8/10/12b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 66MHz
товару немає в наявності
В кошику
од. на суму грн.
| SAKXC2734X40F80LAAKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SAFXE162FN40F80LAAFXQSA1 |
![]() |
Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
DigiKey Programmable: Not Verified
Number of I/O: 40
Part Status: Active
Supplier Device Package: PG-LQFP-64-22
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Description: 16-BIT FLASH RISC MCU
DigiKey Programmable: Not Verified
Number of I/O: 40
Part Status: Active
Supplier Device Package: PG-LQFP-64-22
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SAK-XC2734X40F80LAAKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SAKXC2733X20F66LRAAKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 19x8/10/12b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 19x8/10/12b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SAF-XE162FN40F80LAAFXQSA1 |
![]() |
Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 40
Part Status: Active
Supplier Device Package: PG-LQFP-64-22
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Description: 16-BIT FLASH RISC MCU
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 40
Part Status: Active
Supplier Device Package: PG-LQFP-64-22
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
товару немає в наявності
В кошику
од. на суму грн.
| REFILD8150DC15ASMDTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ILD8150
Packaging: Bulk
Features: Dimmable
Voltage - Input: 8V ~ 80V
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Description: EVAL BOARD FOR ILD8150
Packaging: Bulk
Features: Dimmable
Voltage - Input: 8V ~ 80V
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4760.26 грн |
| IRF6722STR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET
Description: MOSFET N-CH 30V 13A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF6712STR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET
Description: MOSFET N-CH 25V 17A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF6729MTRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 31A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 31A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IRF6714MTR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 29A DIRECTFET
Description: MOSFET N-CH 25V 29A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF6715MTR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 34A DIRECTFET
Description: MOSFET N-CH 25V 34A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF6720S2TR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BB644E7904 |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Description: VARIABLE CAPACITANCE DIODE
товару немає в наявності
В кошику
од. на суму грн.
| PSB2186PV1.1 |
![]() |
Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Number of Circuits: 1
Part Status: Active
Supplier Device Package: P-DIP-40-2
Current - Supply: 17mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: 4-Wire, IOM-2
Function: ISDN
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Packaging: Bulk
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Number of Circuits: 1
Part Status: Active
Supplier Device Package: P-DIP-40-2
Current - Supply: 17mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: 4-Wire, IOM-2
Function: ISDN
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IPB120N08S403ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 7000 шт
В кошику
од. на суму грн.
| IPB120N08S403ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BGSX22G6U10E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF SW DPDT 7.125GHZ ULGA10
Supplier Device Package: PG-ULGA-10-1
Isolation: 20dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 0.85dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Circuit: DPDT
Mounting Type: Surface Mount
Package / Case: 10-UFLGA
Packaging: Tape & Reel (TR)
Description: IC RF SW DPDT 7.125GHZ ULGA10
Supplier Device Package: PG-ULGA-10-1
Isolation: 20dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 0.85dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Circuit: DPDT
Mounting Type: Surface Mount
Package / Case: 10-UFLGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику
од. на суму грн.
| BGSX22G6U10E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF SW DPDT 7.125GHZ ULGA10
Supplier Device Package: PG-ULGA-10-1
Isolation: 20dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 0.85dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Circuit: DPDT
Mounting Type: Surface Mount
Package / Case: 10-UFLGA
Packaging: Cut Tape (CT)
Description: IC RF SW DPDT 7.125GHZ ULGA10
Supplier Device Package: PG-ULGA-10-1
Isolation: 20dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 0.85dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Circuit: DPDT
Mounting Type: Surface Mount
Package / Case: 10-UFLGA
Packaging: Cut Tape (CT)
на замовлення 3426 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.30 грн |
| 10+ | 33.21 грн |
| 25+ | 31.28 грн |
| 100+ | 26.86 грн |
| 250+ | 25.37 грн |
| 500+ | 24.31 грн |
| 1000+ | 22.93 грн |
| IKB30N65ES5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 105.31 грн |
| IKB30N65ES5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 1269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 296.01 грн |
| 10+ | 187.97 грн |
| 100+ | 132.63 грн |
| 500+ | 106.99 грн |
| XMC1301T038F0032ABXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 1947 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 167.38 грн |
| 10+ | 119.92 грн |
| 25+ | 109.45 грн |
| 100+ | 91.97 грн |
| 250+ | 86.84 грн |
| 500+ | 83.75 грн |
| 1000+ | 82.30 грн |
| IPB50R299CPATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 550V 12A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IPB50R250CPATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 13A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 550V 13A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IMZA65R039M1HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 857.82 грн |
| 30+ | 659.35 грн |
| FD600R06ME3_B11_S2 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 600V 600A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 60 nF @ 25 V
Description: IGBT MOD 600V 600A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 60 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FF300R12KT3EHOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 480A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Description: IGBT MOD 1200V 480A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| T720N16TOFXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 1500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 1500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11785.57 грн |
| T720N14TOFXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 1500A DO-200AB
Description: SCR MODULE 1.8KV 1500A DO-200AB
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| 94-2518PBF |
Виробник: Infineon Technologies
Description: IC MOSFET
Description: IC MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| F3L200R07PE4 |
![]() |
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 680 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 680 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3432 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 12711.58 грн |
| SPP04N50C3XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: LOW POWER_LEGACY
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BF 775 E6327 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ SOT23-3
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 45mA
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Operating Temperature: 150°C (TJ)
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Description: RF TRANS NPN 15V 5GHZ SOT23-3
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 45mA
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Operating Temperature: 150°C (TJ)
Part Status: Obsolete
Supplier Device Package: PG-SOT23
товару немає в наявності
В кошику
од. на суму грн.
| SAFC165HLF |
![]() |
Виробник: Infineon Technologies
Description: EMBEDDED UTAH, C166
DigiKey Programmable: Not Verified
Number of I/O: 72
Part Status: Active
Supplier Device Package: PG-TQFP-144-7
Peripherals: PWM, WDT
Connectivity: HDLC, IOM-2/PCM, IrDA, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 2.97V ~ 3.63V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROM
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 3K x 8
Program Memory Size: 8MB (8M x 8)
Speed: 36MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Bulk
Description: EMBEDDED UTAH, C166
DigiKey Programmable: Not Verified
Number of I/O: 72
Part Status: Active
Supplier Device Package: PG-TQFP-144-7
Peripherals: PWM, WDT
Connectivity: HDLC, IOM-2/PCM, IrDA, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 2.97V ~ 3.63V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROM
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 3K x 8
Program Memory Size: 8MB (8M x 8)
Speed: 36MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Bulk
на замовлення 31595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 1025.01 грн |
| IRF7905TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IRF7905TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPI80N06S207AKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TLE4953C |
Виробник: Infineon Technologies
Description: HALL EFFECT SENSOR
Description: HALL EFFECT SENSOR
товару немає в наявності
В кошику
од. на суму грн.
| TLE4953CHAMA3 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.26 грн |
| 5+ | 120.14 грн |
| 10+ | 114.47 грн |
| 25+ | 101.18 грн |
| 50+ | 96.89 грн |
| 100+ | 92.97 грн |
| 500+ | 83.69 грн |
| TLE4953CHAMA3 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLE4953HALA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Description: MAG SWITCH SPEC PURP SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 437.05 грн |
| 10+ | 315.42 грн |
| 25+ | 280.39 грн |
| 50+ | 249.99 грн |
| 100+ | 243.41 грн |
| 500+ | 203.93 грн |
| 1000+ | 187.65 грн |
| TLE4953CBAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955CE2AAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Qualification: AEC-Q100
Grade: Automotive
Part Status: Not For New Designs
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-53
Current - Supply (Max): 8mA
Current - Output (Max): 16mA
Sensing Range: -30mT Trip, 30mT Release
Technology: Hall Effect
Voltage - Supply: 4V ~ 20V
Operating Temperature: -40°C ~ 110°C
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-53
Packaging: Bulk
Description: MAG SWITCH SPEC PURP SSO-2-53
Qualification: AEC-Q100
Grade: Automotive
Part Status: Not For New Designs
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-53
Current - Supply (Max): 8mA
Current - Output (Max): 16mA
Sensing Range: -30mT Trip, 30mT Release
Technology: Hall Effect
Voltage - Supply: 4V ~ 20V
Operating Temperature: -40°C ~ 110°C
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-53
Packaging: Bulk
на замовлення 41772 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 126+ | 172.70 грн |
| TLE4955CE2AAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Qualification: AEC-Q100
Grade: Automotive
Part Status: Not For New Designs
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-53
Current - Supply (Max): 8mA
Current - Output (Max): 16mA
Sensing Range: -30mT Trip, 30mT Release
Technology: Hall Effect
Voltage - Supply: 4V ~ 20V
Operating Temperature: -40°C ~ 110°C
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-53
Packaging: Tape & Box (TB)
Description: MAG SWITCH SPEC PURP SSO-2-53
Qualification: AEC-Q100
Grade: Automotive
Part Status: Not For New Designs
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-53
Current - Supply (Max): 8mA
Current - Output (Max): 16mA
Sensing Range: -30mT Trip, 30mT Release
Technology: Hall Effect
Voltage - Supply: 4V ~ 20V
Operating Temperature: -40°C ~ 110°C
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-53
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLE4957CE6747HAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Description: MAGNETIC SWITCH HALL EFF SSO-3
товару немає в наявності
В кошику
од. на суму грн.
| TLE4957C2E6247HAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 155.36 грн |
| TLE4957C2NE6747HAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
на замовлення 47800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 176+ | 123.95 грн |
| TLE4957C2NE6747HAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955HALA1 |
![]() |
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Supplier Device Package: PG-SSO-2-53
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Through Hole
Package / Case: 2-SIP, SSO-2-53
Packaging: Tape & Box (TB)
Description: IC SPEED SENSOR MAGN PG-SSO-2
Supplier Device Package: PG-SSO-2-53
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Through Hole
Package / Case: 2-SIP, SSO-2-53
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TLE4955CE41184AAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Description: MAG SWITCH SPEC PURP SSO-2-53
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLE4954CBE4XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Description: MAG SWITCH SPEC PURP SSO-2-53
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955CE4AAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Description: MAG SWITCH SPEC PURP SSO-2-53
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLE4955E4HALA1 |
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Description: IC SPEED SENSOR MAGN PG-SSO-2
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955CE4807BAMA1 |
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Description: IC SPEED SENSOR MAGN PG-SSO-2
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955CE11184XAMA1 |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Description: SPEED & CURRENT SENSORS PG-SSO-2
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| CY62148ESL-55ZAXI |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 406.83 грн |
| 10+ | 364.90 грн |
| 25+ | 354.03 грн |
| 50+ | 324.46 грн |
| 234+ | 307.26 грн |
| 468+ | 299.64 грн |
| 702+ | 290.39 грн |
| 1170+ | 284.97 грн |
| PSB21493HV1.7 |
![]() |
Виробник: Infineon Technologies
Description: INCA-S CODEC
Number of Circuits: 1
Part Status: Active
Supplier Device Package: P-MQFP-144-8
Interface: IOM-2
Function: CODEC
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Bulk
Description: INCA-S CODEC
Number of Circuits: 1
Part Status: Active
Supplier Device Package: P-MQFP-144-8
Interface: IOM-2
Function: CODEC
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Bulk
на замовлення 793 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 1323.45 грн |
| SAF-C167CS-LMCA+ |
![]() |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Description: LEGACY 16-BIT MCU
товару немає в наявності
В кошику
од. на суму грн.
| C167SRLMHA |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Number of I/O: 111
Part Status: Active
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Bulk
Description: LEGACY 16-BIT MCU
Number of I/O: 111
Part Status: Active
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.





























