Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126531) > Сторінка 629 з 2109
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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S26KL256SDABHI020 | Infineon Technologies |
Description: IC FLASH 256MBIT PAR 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: Parallel Access Time: 96 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 676 шт В кошику од. на суму грн. | ||||||||||||||||
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CY9AF142LBQN-G-AVE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 64QFNPackaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 51 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||||
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FF400R06KE3HOSA1 | Infineon Technologies |
Description: IGBT MOD 600V 500A 1250W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1250 W Current - Collector Cutoff (Max): 5 mA |
на замовлення 77 шт: термін постачання 21-31 дні (днів) |
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FF400R17KE4EHOSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 400APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 36 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IRS2817DSPBF | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8SOICDigiKey Programmable: Not Verified Packaging: Tube Supplier Device Package: 8-SOIC Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 3800 шт В кошику од. на суму грн. | |||||||||||||||||
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BTS5672EAUMA2 | Infineon Technologies |
Description: IC LED DRVR RGLTR SPI 24A 36DSOPackaging: Tape & Reel (TR) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 6 Frequency: 2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 150°C (TJ) Applications: Automotive Current - Output / Channel: 24A Internal Switch(s): Yes Topology: Switched Capacitor (Charge Pump) Supplier Device Package: PG-DSO-36-36 Dimming: SPI Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 28V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9AF142LBPMC1-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 51 DigiKey Programmable: Not Verified |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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| TZ740N22KOFTIMHDSA1 | Infineon Technologies |
Description: MODULE Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TZ740N22KOFB1TIMHDSA1 | Infineon Technologies |
Description: MODULE Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY62128ELL-45ZXA | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32TSOP IPackaging: Tube Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DZ1070N18KHPSA3 | Infineon Technologies |
Description: DIODE STD 1800V 1100A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1100A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A Current - Reverse Leakage @ Vr: 150 mA @ 1800 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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DZ1070N22KHPSA3 | Infineon Technologies |
Description: DIODE GP 2.2KV 1100A MODULECurrent - Reverse Leakage @ Vr: 150 mA @ 2200 V Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A Voltage - DC Reverse (Vr) (Max): 2200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Module Current - Average Rectified (Io): 1100A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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DZ1070N26KHPSA1 | Infineon Technologies |
Description: DIODE STD 2600V 1070A MODULEOperating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Module Current - Average Rectified (Io): 1070A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Current - Reverse Leakage @ Vr: 150 mA @ 2600 V Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A Voltage - DC Reverse (Vr) (Max): 2600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DZ1070N28KHPSA1 | Infineon Technologies |
Description: DIODE GP 2.8KV 1070A MODULECurrent - Reverse Leakage @ Vr: 150 mA @ 2800 V Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A Voltage - DC Reverse (Vr) (Max): 2800 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Module Current - Average Rectified (Io): 1070A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DZ1070N22KTIMHDSA1 | Infineon Technologies |
Description: MODULE Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FF650R17IE4VBOSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 4150WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A NTC Thermistor: Yes Supplier Device Package: Module Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 4150 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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FZ1200R33HE3BPSA1 | Infineon Technologies |
Description: IGBT MODULE 3300V 1200APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 1200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 13000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 210 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PVX6012PBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 1A 0-280VPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm), 4 Leads Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 1 A Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 14-DIP Voltage - Load: 0 V ~ 280 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| PX7510EDSGCS10060XUMA1 | Infineon Technologies |
Description: PX7510EDSG - PRIMERION PMBUS COM Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IRG4PC50KDPBF | Infineon Technologies |
Description: IGBT 600V 52A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 63ns/150ns Switching Energy: 1.61mJ (on), 840µJ (off) Test Condition: 480V, 30A, 5Ohm, 15V Gate Charge: 200 nC Current - Collector (Ic) (Max): 52 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 104 A Power - Max: 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPDQ65R125CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V |
на замовлення 630 шт: термін постачання 21-31 дні (днів) |
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IPDQ65R060CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V |
на замовлення 730 шт: термін постачання 21-31 дні (днів) |
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IPDQ65R040CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V |
на замовлення 712 шт: термін постачання 21-31 дні (днів) |
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IPDQ65R029CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V |
на замовлення 734 шт: термін постачання 21-31 дні (днів) |
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IPDQ65R017CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V |
на замовлення 627 шт: термін постачання 21-31 дні (днів) |
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IPDQ65R080CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IPDQ65R080CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IPDQ60R035CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-HDSOP-22-1 Drain to Source Voltage (Vdss): 600 V |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IPDQ60R025CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||||
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IPDQ60R025CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V |
на замовлення 725 шт: термін постачання 21-31 дні (днів) |
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IPDQ60R020CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.12mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||||
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IPDQ60R020CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.12mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V |
на замовлення 723 шт: термін постачання 21-31 дні (днів) |
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IPDQ60R015CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 149A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V Power Dissipation (Max): 657W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||||
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IPDQ60R015CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 149A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V Power Dissipation (Max): 657W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4025AZQ-S403 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 48TQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FP35R12KT4PBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 70A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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FP35R12KT4PBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 70A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
| FP35R12KT4B16BOSA1 | Infineon Technologies |
Description: FP35R12 - IGBT MODULEPackaging: Bulk |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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S29CD016J0MQFM030 | Infineon Technologies |
Description: IC FLASH 16MBIT PAR 56MHZ 80PQFPDigiKey Programmable: Not Verified Memory Organization: 512K x 32 Access Time: 54 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Supplier Device Package: 80-PQFP (14x20) Memory Format: FLASH Clock Frequency: 56 MHz Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 2.75V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Tray |
на замовлення 131 шт: термін постачання 21-31 дні (днів) |
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IPD040N08NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V |
на замовлення 2933 шт: термін постачання 21-31 дні (днів) |
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IPD040N08NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CY9BF617TBGL-GK7E1 | Infineon Technologies |
Description: IC MCU 32BIT 768KB FLASH 192FBGAPackaging: Tray Package / Case: 192-LFBGA Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 768KB (768K x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 32x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, Ethernet, I²C, LINbus, SD, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 192-FBGA (12x12) Number of I/O: 154 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1520 шт В кошику од. на суму грн. | ||||||||||||||||
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IRFP4868PBF | Infineon Technologies |
Description: MOSFET N-CH 300V 70A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CY25404ZXI243 | Infineon Technologies |
Description: IC SS CLOCK GENERATOR 20TSSOP Packaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 166MHz Type: Spread Spectrum Clock Generator Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.25V ~ 3.6V Ratio - Input:Output: 1:9 Differential - Input:Output: No/No Supplier Device Package: 20-TSSOP PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 370 шт В кошику од. на суму грн. | |||||||||||||||||
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CY2545QC020T | Infineon Technologies |
Description: IC FANOUT DIST 24QFN Differential - Input:Output: No/No Ratio - Input:Output: 2:8 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: Clock, Crystal Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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CY2545QC021T | Infineon Technologies |
Description: IC FANOUT DIST 24QFNPLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 2:8 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: Clock, Crystal Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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IR3502BMTRPBF | Infineon Technologies |
Description: IC REG XPH INTEL VR11.1 32-MLPQPackaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 100°C Voltage - Supply: 8V ~ 16V Applications: Processor Current - Supply: 8mA Supplier Device Package: 32-MLPQ (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3502BMTRPBF | Infineon Technologies |
Description: IC REG XPH INTEL VR11.1 32-MLPQPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 100°C Voltage - Supply: 8V ~ 16V Applications: Processor Current - Supply: 8mA Supplier Device Package: 32-MLPQ (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CY8C4125PVE-S412T | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tape & Reel (TR) Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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S29GL128S90TFI023 | Infineon Technologies |
Description: IC FLASH 128MBIT PARALLEL 56TSOPPackaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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S29GL512S10DHSS33 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2200 шт В кошику од. на суму грн. | ||||||||||||||||
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S29GL512S10FAI023 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||||||
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S29GL512S10FHSS13 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||||||
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S29GL512S10FHSS33 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||||||
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S29GL512S10DHSS40 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||||
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S29GL512S10FHSS10 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||||
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S29GL01GS10DHSS13 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGA Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2200 шт В кошику од. на суму грн. | ||||||||||||||||
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CY7C1020DV33-10ZSXI | Infineon Technologies |
Description: IC SRAM 512KBIT PAR 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 32K x 16 DigiKey Programmable: Not Verified |
на замовлення 1478 шт: термін постачання 21-31 дні (днів) |
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CY9AF1A2NPMC-G-UNE2 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 100LQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b; D/A 2x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CSIO, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 84 DigiKey Programmable: Not Verified |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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CY9AF1A2MPMC1-G-UNE2 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 80LQFPPackaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b; D/A 2x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CSIO, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (14x14) Number of I/O: 67 DigiKey Programmable: Not Verified |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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| S26KL256SDABHI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 676 шт
В кошику
од. на суму грн.
| CY9AF142LBQN-G-AVE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| FF400R06KE3HOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 600V 500A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Description: IGBT MOD 600V 500A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8904.13 грн |
| 10+ | 7465.95 грн |
| FF400R17KE4EHOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Description: IGBT MODULE 1700V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRS2817DSPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Packaging: Tube
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Packaging: Tube
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
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Мінімальне замовлення: 3800 шт
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| BTS5672EAUMA2 |
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Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
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| CY9AF142LBPMC1-G-JNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 693.68 грн |
| 10+ | 603.15 грн |
| 25+ | 575.12 грн |
| 160+ | 468.63 грн |
| 320+ | 447.57 грн |
| 480+ | 408.08 грн |
| 960+ | 349.59 грн |
| CY62128ELL-45ZXA |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| DZ1070N18KHPSA3 |
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Виробник: Infineon Technologies
Description: DIODE STD 1800V 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 1800 V
Description: DIODE STD 1800V 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 1800 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 30093.00 грн |
| DZ1070N22KHPSA3 |
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Виробник: Infineon Technologies
Description: DIODE GP 2.2KV 1100A MODULE
Current - Reverse Leakage @ Vr: 150 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 1100A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: DIODE GP 2.2KV 1100A MODULE
Current - Reverse Leakage @ Vr: 150 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 1100A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 35640.05 грн |
| DZ1070N26KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE STD 2600V 1070A MODULE
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 1070A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Current - Reverse Leakage @ Vr: 150 mA @ 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Voltage - DC Reverse (Vr) (Max): 2600 V
Description: DIODE STD 2600V 1070A MODULE
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 1070A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Current - Reverse Leakage @ Vr: 150 mA @ 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Voltage - DC Reverse (Vr) (Max): 2600 V
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| DZ1070N28KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GP 2.8KV 1070A MODULE
Current - Reverse Leakage @ Vr: 150 mA @ 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Voltage - DC Reverse (Vr) (Max): 2800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 1070A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: DIODE GP 2.8KV 1070A MODULE
Current - Reverse Leakage @ Vr: 150 mA @ 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Voltage - DC Reverse (Vr) (Max): 2800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 1070A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| FF650R17IE4VBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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Мінімальне замовлення: 3 шт
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| FZ1200R33HE3BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 13000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 210 nF @ 25 V
Description: IGBT MODULE 3300V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 13000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 210 nF @ 25 V
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| PVX6012PBF |
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Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-280V
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 1 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 14-DIP
Voltage - Load: 0 V ~ 280 V
Description: SSR RELAY SPST-NO 1A 0-280V
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 1 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 14-DIP
Voltage - Load: 0 V ~ 280 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| PX7510EDSGCS10060XUMA1 |
Виробник: Infineon Technologies
Description: PX7510EDSG - PRIMERION PMBUS COM
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: PX7510EDSG - PRIMERION PMBUS COM
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 207+ | 97.53 грн |
| IRG4PC50KDPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 52A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/150ns
Switching Energy: 1.61mJ (on), 840µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
Description: IGBT 600V 52A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/150ns
Switching Energy: 1.61mJ (on), 840µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
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| IPDQ65R125CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.85 грн |
| 10+ | 173.90 грн |
| 25+ | 159.56 грн |
| 100+ | 134.98 грн |
| 250+ | 127.94 грн |
| IPDQ65R060CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 448.34 грн |
| 10+ | 330.82 грн |
| 25+ | 305.63 грн |
| 100+ | 260.86 грн |
| 250+ | 248.47 грн |
| IPDQ65R040CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
на замовлення 712 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 604.32 грн |
| 10+ | 451.89 грн |
| 25+ | 419.33 грн |
| 100+ | 359.91 грн |
| 250+ | 352.26 грн |
| IPDQ65R029CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 804.19 грн |
| 10+ | 606.47 грн |
| 25+ | 564.58 грн |
| 100+ | 486.64 грн |
| 250+ | 482.11 грн |
| IPDQ65R017CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1237.64 грн |
| 10+ | 947.18 грн |
| 25+ | 886.03 грн |
| 100+ | 774.45 грн |
| IPDQ65R080CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 750+ | 193.55 грн |
| IPDQ65R080CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 469.50 грн |
| 10+ | 304.33 грн |
| 100+ | 220.32 грн |
| IPDQ60R035CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Drain to Source Voltage (Vdss): 600 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Drain to Source Voltage (Vdss): 600 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 676.43 грн |
| 10+ | 506.08 грн |
| 25+ | 469.84 грн |
| 100+ | 403.58 грн |
| 250+ | 385.77 грн |
| IPDQ60R025CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IPDQ60R025CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 993.09 грн |
| 10+ | 669.80 грн |
| 100+ | 508.11 грн |
| IPDQ60R020CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IPDQ60R020CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V
на замовлення 723 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1058.93 грн |
| 10+ | 720.67 грн |
| 100+ | 661.06 грн |
| IPDQ60R015CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IPDQ60R015CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4025AZQ-S403 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FP35R12KT4PBPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 70A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: IGBT MODULE 1200V 70A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 4877.87 грн |
| FP35R12KT4PBPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 70A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: IGBT MODULE 1200V 70A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| FP35R12KT4B16BOSA1 |
![]() |
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 7169.55 грн |
| S29CD016J0MQFM030 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PAR 56MHZ 80PQFP
DigiKey Programmable: Not Verified
Memory Organization: 512K x 32
Access Time: 54 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 80-PQFP (14x20)
Memory Format: FLASH
Clock Frequency: 56 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 2.75V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
Description: IC FLASH 16MBIT PAR 56MHZ 80PQFP
DigiKey Programmable: Not Verified
Memory Organization: 512K x 32
Access Time: 54 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 80-PQFP (14x20)
Memory Format: FLASH
Clock Frequency: 56 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 2.75V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 367.61 грн |
| 10+ | 325.76 грн |
| 25+ | 322.90 грн |
| IPD040N08NF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
на замовлення 2933 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.44 грн |
| 10+ | 106.95 грн |
| 50+ | 81.20 грн |
| 100+ | 68.42 грн |
| 500+ | 54.74 грн |
| IPD040N08NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 51.61 грн |
| CY9BF617TBGL-GK7E1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1520 шт
В кошику
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| IRFP4868PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 70A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
Description: MOSFET N-CH 300V 70A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
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| CY25404ZXI243 |
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
товару немає в наявності
Мінімальне замовлення: 370 шт
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| CY2545QC020T |
Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Differential - Input:Output: No/No
Ratio - Input:Output: 2:8
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: Clock, Crystal
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Description: IC FANOUT DIST 24QFN
Differential - Input:Output: No/No
Ratio - Input:Output: 2:8
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: Clock, Crystal
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| CY2545QC021T |
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Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 2:8
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: Clock, Crystal
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
Description: IC FANOUT DIST 24QFN
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 2:8
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: Clock, Crystal
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| IR3502BMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG XPH INTEL VR11.1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Description: IC REG XPH INTEL VR11.1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
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| IR3502BMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG XPH INTEL VR11.1 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Description: IC REG XPH INTEL VR11.1 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
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| CY8C4125PVE-S412T |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| S29GL128S90TFI023 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| S29GL512S10DHSS33 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2200 шт
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| S29GL512S10FAI023 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1600 шт
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од. на суму грн.
| S29GL512S10FHSS13 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1600 шт
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| S29GL512S10FHSS33 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1600 шт
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| S29GL512S10DHSS40 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2600 шт
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| S29GL512S10FHSS10 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| S29GL01GS10DHSS13 |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2200 шт
В кошику
од. на суму грн.
| CY7C1020DV33-10ZSXI |
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Виробник: Infineon Technologies
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
на замовлення 1478 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 440.50 грн |
| 10+ | 394.30 грн |
| 25+ | 382.40 грн |
| 40+ | 353.14 грн |
| 135+ | 338.37 грн |
| 270+ | 330.03 грн |
| 540+ | 316.52 грн |
| 945+ | 310.06 грн |
| CY9AF1A2NPMC-G-UNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 84
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 84
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 579.24 грн |
| 10+ | 431.59 грн |
| 25+ | 399.95 грн |
| 90+ | 344.83 грн |
| 270+ | 326.10 грн |
| 450+ | 319.18 грн |
| CY9AF1A2MPMC1-G-UNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Number of I/O: 67
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Number of I/O: 67
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 579.24 грн |
| 10+ | 431.59 грн |
| 25+ | 399.95 грн |
| 90+ | 344.83 грн |
| 270+ | 326.10 грн |
| 450+ | 319.18 грн |



























