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AIMDQ75R016M1HXUMA1 AIMDQ75R016M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b47eec87901f6 Description: SICFET N-CH 750V PG-HDSOP-22
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Power Dissipation (Max): 384W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 750 шт
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AIMDQ75R016M1HXUMA1 AIMDQ75R016M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b47eec87901f6 Description: SICFET N-CH 750V PG-HDSOP-22
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Power Dissipation (Max): 384W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
1+1492.47 грн
10+1029.54 грн
100+879.58 грн
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S25FL164K0XMFI003 S25FL164K0XMFI003 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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S29GL256S90FHSS60 S29GL256S90FHSS60 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 1800 шт
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S26HS512TGABHB013 S26HS512TGABHB013 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S26HS512TGABHB010 S26HS512TGABHB010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
IRAMY20UP60B IRAMY20UP60B Infineon Technologies IRAMY20UP60B.pdf description Description: IGBT IPM 600V 20A 22-PWRSIP MOD
Packaging: Bulk
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 600 V
на замовлення 4184 шт:
термін постачання 21-31 дні (днів)
10+1957.34 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IRAMY20UP60B IRAMY20UP60B Infineon Technologies IRAMY20UP60B.pdf description Description: IGBT IPM 600V 20A 22-PWRSIP MOD
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 600 V
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S29GL256S90TFI013 S29GL256S90TFI013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 56TSOP
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
S29GL256S90TFA023 S29GL256S90TFA023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
E3203009116 Infineon Technologies Description: INFINEON
Packaging: Bulk
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CY9AF141LAPMC-G-JNE2 CY9AF141LAPMC-G-JNE2 Infineon Technologies infineon-cy9afx4xl-m-n-fm3-mcu-datasheet-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-datasheet&redi Description: IC MCU 32BIT 96KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
товару немає в наявності
 Мінімальне замовлення: 1190 шт
В кошику  од. на суму  грн.
S26HS512TGABHM003 S26HS512TGABHM003 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S26HS512TGABHM013 S26HS512TGABHM013 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S26HS512TGABHM010 S26HS512TGABHM010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
BSM100GAL120DLCKHOSA1 Infineon Technologies Description: IGBT MOD 1200V 205A 835W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 205 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 835 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
3+6370.26 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DD435N40KHPSA1 DD435N40KHPSA1 Infineon Technologies Infineon-DD435N-DS-v03_00-EN.pdf?fileId=db3a304412b407950112b4301f7e4f16 Description: DIODE MODULE GP 4000V 573A
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 573A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+35546.56 грн
В кошику  од. на суму  грн.
S79FL01GSDSBHBC13 S79FL01GSDSBHBC13 Infineon Technologies Infineon-1_Gbit_(128_Mbyte)_S79FL01GS_Dual-Quad_SPI_NOR_Flash_Memory-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed144dd4d6d Description: IC FLASH 1GBIT SPI 80MHZ 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Memory Interface: SPI
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPT65R195G7XTMA1 IPT65R195G7XTMA1 Infineon Technologies Infineon-IPT65R195G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902292a4f21 Description: MOSFET N-CH 650V 14A 8HSOF
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 4.8A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 172664 шт:
термін постачання 21-31 дні (днів)
148+145.81 грн
Мінімальне замовлення: 148 шт
В кошику  од. на суму  грн.
CY9BF002BGL-G-102-K7ERE1 Infineon Technologies Description: IC MCU
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
S29GL01GS10TFI013 S29GL01GS10TFI013 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
S29GL01GS10TFA023 S29GL01GS10TFA023 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AUIRF1324S AUIRF1324S Infineon Technologies auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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IPZ40N04S53R9ATMA1 IPZ40N04S53R9ATMA1 Infineon Technologies Infineon-IPZ40N04S5-3R9-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce6ac0cbe5f1c Description: MOSFET_(20V 40V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tj)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 21µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1737 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)
4+88.34 грн
10+53.95 грн
100+35.68 грн
500+26.13 грн
1000+23.77 грн
2000+22.21 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPZ40N04S5L3R6ATMA1 IPZ40N04S5L3R6ATMA1 Infineon Technologies Infineon-IPZ40N04S5L-3R6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce6ac19815f1f Description: MOSFET_(20V 40V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tj)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IR25601SPBF IR25601SPBF Infineon Technologies Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
DigiKey Programmable: Not Verified
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IR25602SPBF IR25602SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IR25604SPBF IR25604SPBF Infineon Technologies Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR25606SPBF IR25606SPBF Infineon Technologies Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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CY9AF154MABGL-GK9E1 CY9AF154MABGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 288KB FLASH 96FBGA
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 96-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Program Memory Size: 288KB (288K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 17x12b
Core Processor: ARM® Cortex®-M3
товару немає в наявності
 Мінімальне замовлення: 4900 шт
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IMLT65R060M2HXTMA1 IMLT65R060M2HXTMA1 Infineon Technologies infineon-imlt65r060m2h-datasheet-en.pdf Description: SICFET N-CH 650V 40A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 15.4A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+185.42 грн
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IMLT65R060M2HXTMA1 IMLT65R060M2HXTMA1 Infineon Technologies infineon-imlt65r060m2h-datasheet-en.pdf Description: SICFET N-CH 650V 40A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 15.4A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 2713 шт:
термін постачання 21-31 дні (днів)
1+489.74 грн
10+317.81 грн
100+230.67 грн
500+205.10 грн
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IMLT65R040M2HXTMA1 IMLT65R040M2HXTMA1 Infineon Technologies infineon-imlt65r040m2h-datasheet-en.pdf Description: SICFET N-CH 650V 57A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+257.12 грн
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IMLT65R040M2HXTMA1 IMLT65R040M2HXTMA1 Infineon Technologies infineon-imlt65r040m2h-datasheet-en.pdf Description: SICFET N-CH 650V 57A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 2367 шт:
термін постачання 21-31 дні (днів)
1+626.90 грн
10+411.98 грн
100+303.68 грн
500+284.41 грн
В кошику  од. на суму  грн.
IMLT65R020M2HXTMA1 IMLT65R020M2HXTMA1 Infineon Technologies infineon-imlt65r020m2h-datasheet-en.pdf Description: SICFET N-CH 650V 107A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IMLT65R020M2HXTMA1 IMLT65R020M2HXTMA1 Infineon Technologies infineon-imlt65r020m2h-datasheet-en.pdf Description: SICFET N-CH 650V 107A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
на замовлення 842 шт:
термін постачання 21-31 дні (днів)
1+1022.88 грн
10+691.14 грн
100+575.48 грн
В кошику  од. на суму  грн.
SMACKMAD18CODL01ESOFT1 Infineon Technologies Description: NFC_LOCK_MOBILE DSC SOFTWARE
Packaging: Electronic Delivery
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IPP04CN10NGXKSA1 IPP04CN10NGXKSA1 Infineon Technologies Infineon-IPP04CN10N-DS-v01_04-en.pdf?fileId=db3a30432313ff5e012393a80d1d03d8 Description: MV POWER MOS
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
товару немає в наявності
 Мінімальне замовлення: 500 шт
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IRF8707TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
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S25FL512SAGBHBB13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S25FL512SAGBHBB10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 1690 шт
В кошику  од. на суму  грн.
T1503NH80TOHXOSA1 T1503NH80TOHXOSA1 Infineon Technologies Infineon-T1503NH-DS-v07_00-en_de.pdf?fileId=db3a304323b87bc201240b6b32f647be Description: SCR 8KV 2770A BG-T15040L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 57000A @ 50Hz
Current - On State (It (AV)) (Max): 2560 A
Voltage - On State (Vtm) (Max): 3 V
Supplier Device Package: BG-T15040L-1
Current - On State (It (RMS)) (Max): 2770 A
Voltage - Off State: 8 kV
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T1503N75TOHXPSA2 Infineon Technologies T1503N_Rev8.0_05-02-11.pdf Description: SCR MODULE 8KV 2770A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 57000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1770 A
Current - On State (It (RMS)) (Max): 2770 A
Voltage - Off State: 8 kV
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28471162A Infineon Technologies Description: INFINEON
Packaging: Bulk
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IRG7PH44K10DPBF IRG7PH44K10DPBF Infineon Technologies IRG7PH44K10D%28-E%29PbF.pdf Description: IGBT 1200V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 75ns/315ns
Switching Energy: 2.1mJ (on), 1.3mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 320 W
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IPD90N04S304ATMA1 IPD90N04S304ATMA1 Infineon Technologies Infineon-IPD90N04S3_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba3ee45a2&ack=t Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15012 шт:
термін постачання 21-31 дні (днів)
195+101.42 грн
Мінімальне замовлення: 195 шт
В кошику  од. на суму  грн.
CY22381SXI-181 CY22381SXI-181 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
5+76.72 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
CY22381SXI-181 CY22381SXI-181 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-174 CY22381SXI-174 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-211 CY22381SXI-211 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-146 CY22381SXI-146 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-174T CY22381SXI-174T Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXC-158 CY22381SXC-158 Infineon Technologies download Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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IPD60R600CM8XTMA1 IPD60R600CM8XTMA1 Infineon Technologies Infineon-IPD60R600CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8d0f53010476 Description: IPD60R600CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 40µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IPD60R600CM8XTMA1 IPD60R600CM8XTMA1 Infineon Technologies Infineon-IPD60R600CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8d0f53010476 Description: IPD60R600CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 40µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
на замовлення 599 шт:
термін постачання 21-31 дні (днів)
3+105.39 грн
10+64.02 грн
100+42.55 грн
500+31.26 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
CY2308SI-4 CY2308SI-4 Infineon Technologies CY2308.pdf Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1304 шт:
термін постачання 21-31 дні (днів)
100+219.11 грн
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
CY2308SI-4 CY2308SI-4 Infineon Technologies CY2308.pdf Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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S25FL256LAGBHI030 S25FL256LAGBHI030 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
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S25FL256LAGBHM030 S25FL256LAGBHM030 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
1+555.61 грн
10+497.20 грн
25+481.99 грн
50+441.54 грн
100+430.82 грн
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TLE75080ESHDBTOBO1 TLE75080ESHDBTOBO1 Infineon Technologies infineon-infineon-spiderplusmb-eval-usermanual-v01-usermanual-en.pdf Description: TLE75080-ESH DB CONTAINS THE DAU
Packaging: Bulk
Function: Expansion Board
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE75080
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AIMDQ75R016M1HXUMA1 Infineon-AIMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b47eec87901f6
AIMDQ75R016M1HXUMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Power Dissipation (Max): 384W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 750 шт
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AIMDQ75R016M1HXUMA1 Infineon-AIMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b47eec87901f6
AIMDQ75R016M1HXUMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Power Dissipation (Max): 384W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1492.47 грн
10+1029.54 грн
100+879.58 грн
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S25FL164K0XMFI003 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL164K0XMFI003
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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S29GL256S90FHSS60 PdfFile_133368.pdf
S29GL256S90FHSS60
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
S26HS512TGABHB013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHB013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S26HS512TGABHB010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHB010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
IRAMY20UP60B description IRAMY20UP60B.pdf
IRAMY20UP60B
Виробник: Infineon Technologies
Description: IGBT IPM 600V 20A 22-PWRSIP MOD
Packaging: Bulk
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 600 V
на замовлення 4184 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+1957.34 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IRAMY20UP60B description IRAMY20UP60B.pdf
IRAMY20UP60B
Виробник: Infineon Technologies
Description: IGBT IPM 600V 20A 22-PWRSIP MOD
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 600 V
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S29GL256S90TFI013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90TFI013
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
S29GL256S90TFA023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90TFA023
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
E3203009116
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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CY9AF141LAPMC-G-JNE2 infineon-cy9afx4xl-m-n-fm3-mcu-datasheet-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-datasheet&redi
CY9AF141LAPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
товару немає в наявності
Мінімальне замовлення: 1190 шт
В кошику  од. на суму  грн.
S26HS512TGABHM003 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHM003
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S26HS512TGABHM013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHM013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S26HS512TGABHM010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHM010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
BSM100GAL120DLCKHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 205A 835W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 205 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 835 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+6370.26 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DD435N40KHPSA1 Infineon-DD435N-DS-v03_00-EN.pdf?fileId=db3a304412b407950112b4301f7e4f16
DD435N40KHPSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 4000V 573A
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 573A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+35546.56 грн
В кошику  од. на суму  грн.
S79FL01GSDSBHBC13 Infineon-1_Gbit_(128_Mbyte)_S79FL01GS_Dual-Quad_SPI_NOR_Flash_Memory-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed144dd4d6d
S79FL01GSDSBHBC13
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI 80MHZ 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Memory Interface: SPI
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPT65R195G7XTMA1 Infineon-IPT65R195G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902292a4f21
IPT65R195G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A 8HSOF
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 4.8A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 172664 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
148+145.81 грн
Мінімальне замовлення: 148 шт
В кошику  од. на суму  грн.
CY9BF002BGL-G-102-K7ERE1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
S29GL01GS10TFI013 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL01GS10TFI013
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
S29GL01GS10TFA023 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL01GS10TFA023
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AUIRF1324S auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c
AUIRF1324S
Виробник: Infineon Technologies
Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPZ40N04S53R9ATMA1 Infineon-IPZ40N04S5-3R9-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce6ac0cbe5f1c
IPZ40N04S53R9ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tj)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 21µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1737 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+88.34 грн
10+53.95 грн
100+35.68 грн
500+26.13 грн
1000+23.77 грн
2000+22.21 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPZ40N04S5L3R6ATMA1 Infineon-IPZ40N04S5L-3R6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce6ac19815f1f
IPZ40N04S5L3R6ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tj)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IR25601SPBF Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8
IR25601SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
DigiKey Programmable: Not Verified
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IR25602SPBF fundamentals-of-power-semiconductors
IR25602SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR25604SPBF Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5
IR25604SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR25606SPBF Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8
IR25606SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9AF154MABGL-GK9E1
CY9AF154MABGL-GK9E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 96-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Program Memory Size: 288KB (288K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 17x12b
Core Processor: ARM® Cortex®-M3
товару немає в наявності
Мінімальне замовлення: 4900 шт
В кошику  од. на суму  грн.
IMLT65R060M2HXTMA1 infineon-imlt65r060m2h-datasheet-en.pdf
IMLT65R060M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 40A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 15.4A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1800+185.42 грн
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IMLT65R060M2HXTMA1 infineon-imlt65r060m2h-datasheet-en.pdf
IMLT65R060M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 40A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 15.4A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 2713 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+489.74 грн
10+317.81 грн
100+230.67 грн
500+205.10 грн
В кошику  од. на суму  грн.
IMLT65R040M2HXTMA1 infineon-imlt65r040m2h-datasheet-en.pdf
IMLT65R040M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 57A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1800+257.12 грн
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IMLT65R040M2HXTMA1 infineon-imlt65r040m2h-datasheet-en.pdf
IMLT65R040M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 57A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 2367 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+626.90 грн
10+411.98 грн
100+303.68 грн
500+284.41 грн
В кошику  од. на суму  грн.
IMLT65R020M2HXTMA1 infineon-imlt65r020m2h-datasheet-en.pdf
IMLT65R020M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 107A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IMLT65R020M2HXTMA1 infineon-imlt65r020m2h-datasheet-en.pdf
IMLT65R020M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 107A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
на замовлення 842 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1022.88 грн
10+691.14 грн
100+575.48 грн
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SMACKMAD18CODL01ESOFT1
Виробник: Infineon Technologies
Description: NFC_LOCK_MOBILE DSC SOFTWARE
Packaging: Electronic Delivery
товару немає в наявності
В кошику  од. на суму  грн.
IPP04CN10NGXKSA1 Infineon-IPP04CN10N-DS-v01_04-en.pdf?fileId=db3a30432313ff5e012393a80d1d03d8
IPP04CN10NGXKSA1
Виробник: Infineon Technologies
Description: MV POWER MOS
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IRF8707TRPBFXTMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
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S25FL512SAGBHBB13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
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S25FL512SAGBHBB10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1690 шт
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T1503NH80TOHXOSA1 Infineon-T1503NH-DS-v07_00-en_de.pdf?fileId=db3a304323b87bc201240b6b32f647be
T1503NH80TOHXOSA1
Виробник: Infineon Technologies
Description: SCR 8KV 2770A BG-T15040L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 57000A @ 50Hz
Current - On State (It (AV)) (Max): 2560 A
Voltage - On State (Vtm) (Max): 3 V
Supplier Device Package: BG-T15040L-1
Current - On State (It (RMS)) (Max): 2770 A
Voltage - Off State: 8 kV
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T1503N75TOHXPSA2 T1503N_Rev8.0_05-02-11.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 8KV 2770A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 57000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1770 A
Current - On State (It (RMS)) (Max): 2770 A
Voltage - Off State: 8 kV
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28471162A
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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IRG7PH44K10DPBF IRG7PH44K10D%28-E%29PbF.pdf
IRG7PH44K10DPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 75ns/315ns
Switching Energy: 2.1mJ (on), 1.3mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 320 W
товару немає в наявності
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IPD90N04S304ATMA1 Infineon-IPD90N04S3_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba3ee45a2&ack=t
IPD90N04S304ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15012 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
195+101.42 грн
Мінімальне замовлення: 195 шт
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CY22381SXI-181 cy22381_8.pdf
CY22381SXI-181
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+76.72 грн
Мінімальне замовлення: 5 шт
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CY22381SXI-181 cy22381_8.pdf
CY22381SXI-181
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-174 cy22381_8.pdf
CY22381SXI-174
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-211 cy22381_8.pdf
CY22381SXI-211
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-146 cy22381_8.pdf
CY22381SXI-146
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-174T cy22381_8.pdf
CY22381SXI-174T
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXC-158 download
CY22381SXC-158
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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IPD60R600CM8XTMA1 Infineon-IPD60R600CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8d0f53010476
IPD60R600CM8XTMA1
Виробник: Infineon Technologies
Description: IPD60R600CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 40µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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IPD60R600CM8XTMA1 Infineon-IPD60R600CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8d0f53010476
IPD60R600CM8XTMA1
Виробник: Infineon Technologies
Description: IPD60R600CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 40µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
на замовлення 599 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+105.39 грн
10+64.02 грн
100+42.55 грн
500+31.26 грн
Мінімальне замовлення: 3 шт
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CY2308SI-4 CY2308.pdf
CY2308SI-4
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1304 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
100+219.11 грн
Мінімальне замовлення: 100 шт
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CY2308SI-4 CY2308.pdf
CY2308SI-4
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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S25FL256LAGBHI030 INFN-S-A0017271261-1.pdf
S25FL256LAGBHI030
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
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S25FL256LAGBHM030 INFN-S-A0017271261-1.pdf
S25FL256LAGBHM030
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+555.61 грн
10+497.20 грн
25+481.99 грн
50+441.54 грн
100+430.82 грн
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TLE75080ESHDBTOBO1 infineon-infineon-spiderplusmb-eval-usermanual-v01-usermanual-en.pdf
TLE75080ESHDBTOBO1
Виробник: Infineon Technologies
Description: TLE75080-ESH DB CONTAINS THE DAU
Packaging: Bulk
Function: Expansion Board
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE75080
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