Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126722) > Сторінка 708 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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CY8CLED04D02-56LTXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 56VQFNPackaging: Tray Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Controller Series: CY8CLED Program Memory Type: FLASH (16kB) Applications: Intelligent LED Driver Core Processor: M8C Supplier Device Package: 56-QFN (8x8) Number of I/O: 14 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TD500N18KOFXPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DKPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 500 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 900 A Voltage - Off State: 1.8 kV |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | |||||||||||||||
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TT500N16KOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 900A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 500 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 900 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TT500N18KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1.8KV 900A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 500 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 900 A Voltage - Off State: 1.8 kV |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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S6E2G26HHAGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 512KB 144LQFPPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 180MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SmartCard, SPI, UART/USART, USB Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 153 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
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IRGP4660DPBF | Infineon Technologies |
Description: IGBT 600V 100A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 60ns/145ns Switching Energy: 625µJ (on), 1.28mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 144 A Power - Max: 330 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF7452PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 4.5A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S6E2C5AL0AGL2000A | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 216LQFPPackaging: Tray Package / Case: 216-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 216-LQFP (24x24) Number of I/O: 190 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
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S6E2CC8J0AGB1000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 192FBGAPackaging: Tray Package / Case: 192-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 192-FBGA (12x12) Number of I/O: 152 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1680 шт В кошику од. на суму грн. | ||||||||||||||
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S6E2CC8H0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 144LQFPPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
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S6E2C5AJ0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 176LQFPPackaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 152 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
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S6E2CC8L0AGL2000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 216LQFPData Converters: A/D 32x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 128K x 8 Program Memory Size: 1MB (1M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 216-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 190 Supplier Device Package: 216-LQFP (24x24) Peripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
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S6E2CC9H0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 1.5MB FLASH 144LQFPDigiKey Programmable: Not Verified Number of I/O: 120 Supplier Device Package: 144-LQFP (20x20) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 192K x 8 Program Memory Size: 1.5MB (1.5M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
| 98-0265PBF | Infineon Technologies |
Description: IC CONTROLLER PFC/BALLAST 16DIPPackaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IR3477MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 15A 16QFNVoltage - Output (Min/Fixed): 0.5V Voltage - Input (Min): 3V Voltage - Output (Max): 12V Synchronous Rectifier: Yes Supplier Device Package: 16-QFN (5x6) Topology: Buck Voltage - Input (Max): 27V Frequency - Switching: Up to 750kHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 15A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 16-PowerVQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S6E2C48H0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 144LQFPPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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S6E2C3AL0AGL2000A | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 216LQFPPackage / Case: 216-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 190 Supplier Device Package: 216-LQFP (24x24) Peripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 32x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 256K x 8 Program Memory Size: 2MB (2M x 8) Speed: 200MHz Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
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S6E2C48J0AGB1000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 192FBGAPackaging: Tray Package / Case: 192-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 192-FBGA (12x12) Number of I/O: 152 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1680 шт В кошику од. на суму грн. | ||||||||||||||
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S6E2C48J0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 176LQFPPackaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 152 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
| S99-50572 | Infineon Technologies |
Description: IC FLASH Packaging: Bulk Memory Format: FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S99-50539 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S99-50540 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FF650R17IE4PB60BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 930A 4150WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A NTC Thermistor: Yes Current - Collector (Ic) (Max): 930 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 4150 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||
| FF1000R17IE4PB60BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 1390A 6250WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A NTC Thermistor: Yes Current - Collector (Ic) (Max): 1390 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 6250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 81 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||
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IRF6797MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 36A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BSM10GP120BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 20A AG-ECONO2B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 100 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ICE5QR0680AZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPower (Watts): 74 W Voltage - Start Up: 16 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DIP-7 Voltage - Supply (Vcc/Vdd): 10V ~ 27V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 800V Internal Switch(s): Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Packaging: Bulk |
на замовлення 4625 шт: термін постачання 21-31 дні (днів) |
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CHL8328-28CRT | Infineon Technologies |
Description: IC REG CTRLR DDR 2OUT 56VQFNPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: -20°C ~ 85°C (TA) Applications: Controller, DDR, Intel VR12, AMD SVI, PVI Supplier Device Package: PG-VQFN-56-901 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FZ1500R33HE3C1NPSA1 | Infineon Technologies |
Description: IHV IHM T XHP 3 3-6 5KPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA NTC Thermistor: No Supplier Device Package: AG-IHVB190-3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 2400000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 280 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FZ1500R33HE3B60BPSA1 | Infineon Technologies |
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA NTC Thermistor: No Supplier Device Package: AG-IHVB190 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 2400000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 280 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IM111X6Q1BAUMA1 | Infineon Technologies |
Description: CIPOS NANO PG-IQFN-37Packaging: Tape & Reel (TR) Package / Case: 39-PowerVQFN Mounting Type: Surface Mount Type: MOSFET Configuration: H-Bridge Voltage - Isolation: 1500Vrms Grade: Automotive Current: 12 A Voltage: 600 V Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IM111X6Q1BAUMA1 | Infineon Technologies |
Description: CIPOS NANO PG-IQFN-37Packaging: Cut Tape (CT) Package / Case: 39-PowerVQFN Mounting Type: Surface Mount Type: MOSFET Configuration: H-Bridge Voltage - Isolation: 1500Vrms Grade: Automotive Current: 12 A Voltage: 600 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGAP2S30AE6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTUREMounting Type: Surface Mount Package / Case: 16-WFDFN Exposed Pad Packaging: Tape & Reel (TR) Supplier Device Package: PG-TSNP-16-13 Test Frequency: 3.6GHz P1dB: 28.5dBm Noise Figure: 3.2dB Current - Supply: 121mA Gain: 35dB Voltage - Supply: 4.75V ~ 5.25V RF Type: 4G, 5G Frequency: 3.3GHz ~ 4.2GHz |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BGAP2S30AE6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTURESupplier Device Package: PG-TSNP-16-13 Test Frequency: 3.6GHz P1dB: 28.5dBm Noise Figure: 3.2dB Current - Supply: 121mA Gain: 35dB Voltage - Supply: 4.75V ~ 5.25V RF Type: 4G, 5G Frequency: 3.3GHz ~ 4.2GHz Mounting Type: Surface Mount Package / Case: 16-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| BGAP2D30AE6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTURESupplier Device Package: PG-TSNP-16-13 P1dB: 28.5dBm Noise Figure: 3.1dB Current - Supply: 121mA Gain: 35.2dB Voltage - Supply: 4.75V ~ 5.25V RF Type: 4G, 5G Frequency: 3.3GHz ~ 4.2GHz Mounting Type: Surface Mount Package / Case: 16-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| BGAP2D30AE6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTURESupplier Device Package: PG-TSNP-16-13 P1dB: 28.5dBm Noise Figure: 3.1dB Current - Supply: 121mA Gain: 35.2dB Voltage - Supply: 4.75V ~ 5.25V RF Type: 4G, 5G Frequency: 3.3GHz ~ 4.2GHz Mounting Type: Surface Mount Package / Case: 16-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| BGAP2D20AE6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTURESupplier Device Package: PG-TSNP-16-13 P1dB: 28.9dBm Noise Figure: 3.4dB Current - Supply: 121mA Gain: 35.1dB Voltage - Supply: 4.75V ~ 5.25V RF Type: 4G, 5G Frequency: 2.3GHz ~ 2.7GHz Mounting Type: Surface Mount Package / Case: 16-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| BGAP2D20AE6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTURESupplier Device Package: PG-TSNP-16-13 P1dB: 28.9dBm Noise Figure: 3.4dB Current - Supply: 121mA Gain: 35.1dB Voltage - Supply: 4.75V ~ 5.25V RF Type: 4G, 5G Frequency: 2.3GHz ~ 2.7GHz Mounting Type: Surface Mount Package / Case: 16-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BGAP2S20AE6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTURESupplier Device Package: PG-TSNP-16-13 Test Frequency: 2.5GHz P1dB: 28.9dBm Noise Figure: 3.8dB Current - Supply: 121mA Gain: 34.8dB Voltage - Supply: 4.75V ~ 5.25V RF Type: 4G, 5G Frequency: 2.3GHz ~ 2.7GHz Mounting Type: Surface Mount Package / Case: 16-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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BGAP2S20AE6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTURESupplier Device Package: PG-TSNP-16-13 Test Frequency: 2.5GHz P1dB: 28.9dBm Noise Figure: 3.8dB Current - Supply: 121mA Gain: 34.8dB Voltage - Supply: 4.75V ~ 5.25V RF Type: 4G, 5G Frequency: 2.3GHz ~ 2.7GHz Mounting Type: Surface Mount Package / Case: 16-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 577 шт: термін постачання 21-31 дні (днів) |
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CY7C1615KV18-333BZXC | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 333 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 525 шт В кошику од. на суму грн. | ||||||||||||||
|
FP15R12W2T4BOMA1 | Infineon Technologies |
Description: IGBT MOD 1200V 30A 145WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 145 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 890 pF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CY14B108L-ZS45XIT | Infineon Technologies |
Description: IC NVSRAM 8MBIT PAR 44TSOP IIPackaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
S29GL01GS11FAIV23 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||||
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FS10R06VE3BOMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 16A 50W MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 50 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 550 pF @ 25 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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FS10R06VE3BOMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 16A 50W MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 50 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 550 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY9AF142LAPMC1-G-MNE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 51 DigiKey Programmable: Not Verified |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N008AUMA1 | Infineon Technologies |
Description: IAUAN04S7N008AUMA1Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IAUAN04S7N008AUMA1 | Infineon Technologies |
Description: IAUAN04S7N008AUMA1Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N007AUMA1 | Infineon Technologies |
Description: IAUAN04S7N007AUMA1Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Power Dissipation (Max): 149W (Tc) Vgs(th) (Max) @ Id: 3V @ 73µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IAUAN04S7N007AUMA1 | Infineon Technologies |
Description: IAUAN04S7N007AUMA1Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Power Dissipation (Max): 149W (Tc) Vgs(th) (Max) @ Id: 3V @ 73µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 151 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N006AUMA1 | Infineon Technologies |
Description: IAUAN04S7N006AUMA1Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-HSOF-5-1 Vgs(th) (Max) @ Id: 3V @ 95µA Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IAUAN04S7N006AUMA1 | Infineon Technologies |
Description: IAUAN04S7N006AUMA1Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-HSOF-5-1 Vgs(th) (Max) @ Id: 3V @ 95µA Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 455 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N005AUMA1 | Infineon Technologies |
Description: IAUAN04S7N005AUMA1Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-HSOF-5-1 Vgs(th) (Max) @ Id: 3V @ 110µA Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N005AUMA1 | Infineon Technologies |
Description: IAUAN04S7N005AUMA1Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-HSOF-5-1 Vgs(th) (Max) @ Id: 3V @ 110µA Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V |
на замовлення 2032 шт: термін постачання 21-31 дні (днів) |
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IAUAN04S7N004AUMA1 | Infineon Technologies |
Description: IAUAN04S7N004AUMA1Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj) Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3V @ 150µA Supplier Device Package: PG-HSOF-5-5 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IAUAN04S7N004AUMA1 | Infineon Technologies |
Description: IAUAN04S7N004AUMA1Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj) Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3V @ 150µA Supplier Device Package: PG-HSOF-5-5 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 186 шт: термін постачання 21-31 дні (днів) |
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KITA2GTC3975VTRBSTOBO1 | Infineon Technologies |
Description: AURIX TC397 5V TRB SOCKET BRDPackaging: Bulk Mounting Type: Socket Type: MCU 32-Bit Contents: Board(s) Core Processor: TriCore™ Utilized IC / Part: TC397 Platform: AURIX TC397 5V TRB Socket |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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FS100R17KE3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 145A 555WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 555 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
| IFS200B12N3E4B37BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO3B-411Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3B IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| CY8CLED04D02-56LTXI |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TD500N18KOFXPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| TT500N16KOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику
од. на суму грн.
| TT500N18KOFHPSA2 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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Мінімальне замовлення: 2 шт
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| S6E2G26HHAGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 153
Description: IC MCU 32BIT 512KB 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 153
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Мінімальне замовлення: 600 шт
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| IRGP4660DPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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| IRF7452PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Description: MOSFET N-CH 100V 4.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
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| S6E2C5AL0AGL2000A |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 400 шт
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| S6E2CC8J0AGB1000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1680 шт
В кошику
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| S6E2CC8H0AGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| S6E2C5AJ0AGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
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| S6E2CC8L0AGL2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 216LQFP
Data Converters: A/D 32x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 216-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 190
Supplier Device Package: 216-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Description: IC MCU 32BIT 1MB FLASH 216LQFP
Data Converters: A/D 32x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 216-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 190
Supplier Device Package: 216-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
товару немає в наявності
Мінімальне замовлення: 400 шт
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| S6E2CC9H0AGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| IR3477MTRPBF |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 15A 16QFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 3V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: 16-QFN (5x6)
Topology: Buck
Voltage - Input (Max): 27V
Frequency - Switching: Up to 750kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 15A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Description: IC REG BUCK ADJ 15A 16QFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 3V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: 16-QFN (5x6)
Topology: Buck
Voltage - Input (Max): 27V
Frequency - Switching: Up to 750kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 15A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
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| S6E2C48H0AGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1450.27 грн |
| 10+ | 1122.43 грн |
| 60+ | 1003.05 грн |
| 120+ | 928.36 грн |
| S6E2C3AL0AGL2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 216LQFP
Package / Case: 216-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 190
Supplier Device Package: 216-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Description: IC MCU 32BIT 2MB FLASH 216LQFP
Package / Case: 216-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 190
Supplier Device Package: 216-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2MB (2M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| S6E2C48J0AGB1000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1680 шт
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| S6E2C48J0AGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 400 шт
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| FF650R17IE4PB60BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
Description: IGBT MODULE 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
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Мінімальне замовлення: 3 шт
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| FF1000R17IE4PB60BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1390A 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Description: IGBT MODULE 1700V 1390A 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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Мінімальне замовлення: 3 шт
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| IRF6797MTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 36A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V
Description: MOSFET N-CH 25V 36A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V
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| BSM10GP120BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 20A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Description: IGBT MODULE 1200V 20A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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| ICE5QR0680AZXKLA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 74 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Bulk
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 74 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Bulk
на замовлення 4625 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 183+ | 123.82 грн |
| CHL8328-28CRT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
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| FZ1500R33HE3C1NPSA1 |
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Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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| FZ1500R33HE3B60BPSA1 |
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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| IM111X6Q1BAUMA1 |
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Виробник: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
Description: CIPOS NANO PG-IQFN-37
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
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Мінімальне замовлення: 2000 шт
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| IM111X6Q1BAUMA1 |
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Виробник: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
Description: CIPOS NANO PG-IQFN-37
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
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| BGAP2S30AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-16-13
Test Frequency: 3.6GHz
P1dB: 28.5dBm
Noise Figure: 3.2dB
Current - Supply: 121mA
Gain: 35dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 3.3GHz ~ 4.2GHz
Description: WIRELESS INFRASTRUCTURE
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-16-13
Test Frequency: 3.6GHz
P1dB: 28.5dBm
Noise Figure: 3.2dB
Current - Supply: 121mA
Gain: 35dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 3.3GHz ~ 4.2GHz
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 222.97 грн |
| BGAP2S30AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
Test Frequency: 3.6GHz
P1dB: 28.5dBm
Noise Figure: 3.2dB
Current - Supply: 121mA
Gain: 35dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
Test Frequency: 3.6GHz
P1dB: 28.5dBm
Noise Figure: 3.2dB
Current - Supply: 121mA
Gain: 35dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 519.37 грн |
| 10+ | 386.59 грн |
| 25+ | 351.97 грн |
| 100+ | 290.13 грн |
| 250+ | 268.70 грн |
| 500+ | 254.79 грн |
| 1000+ | 238.64 грн |
| BGAP2D30AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
P1dB: 28.5dBm
Noise Figure: 3.1dB
Current - Supply: 121mA
Gain: 35.2dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
P1dB: 28.5dBm
Noise Figure: 3.1dB
Current - Supply: 121mA
Gain: 35.2dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 238.76 грн |
| BGAP2D30AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
P1dB: 28.5dBm
Noise Figure: 3.1dB
Current - Supply: 121mA
Gain: 35.2dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
P1dB: 28.5dBm
Noise Figure: 3.1dB
Current - Supply: 121mA
Gain: 35.2dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 483.69 грн |
| 10+ | 357.35 грн |
| 25+ | 325.12 грн |
| 100+ | 268.20 грн |
| 250+ | 248.73 грн |
| 500+ | 236.17 грн |
| 1000+ | 221.56 грн |
| BGAP2D20AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
P1dB: 28.9dBm
Noise Figure: 3.4dB
Current - Supply: 121mA
Gain: 35.1dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 2.3GHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
P1dB: 28.9dBm
Noise Figure: 3.4dB
Current - Supply: 121mA
Gain: 35.1dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 2.3GHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 238.76 грн |
| BGAP2D20AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
P1dB: 28.9dBm
Noise Figure: 3.4dB
Current - Supply: 121mA
Gain: 35.1dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 2.3GHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
P1dB: 28.9dBm
Noise Figure: 3.4dB
Current - Supply: 121mA
Gain: 35.1dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 2.3GHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 483.69 грн |
| 10+ | 357.35 грн |
| 25+ | 325.12 грн |
| 100+ | 268.20 грн |
| 250+ | 248.73 грн |
| 500+ | 236.17 грн |
| 1000+ | 221.56 грн |
| BGAP2S20AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
Test Frequency: 2.5GHz
P1dB: 28.9dBm
Noise Figure: 3.8dB
Current - Supply: 121mA
Gain: 34.8dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 2.3GHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
Test Frequency: 2.5GHz
P1dB: 28.9dBm
Noise Figure: 3.8dB
Current - Supply: 121mA
Gain: 34.8dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 2.3GHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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од. на суму грн.
| BGAP2S20AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
Test Frequency: 2.5GHz
P1dB: 28.9dBm
Noise Figure: 3.8dB
Current - Supply: 121mA
Gain: 34.8dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 2.3GHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: WIRELESS INFRASTRUCTURE
Supplier Device Package: PG-TSNP-16-13
Test Frequency: 2.5GHz
P1dB: 28.9dBm
Noise Figure: 3.8dB
Current - Supply: 121mA
Gain: 34.8dB
Voltage - Supply: 4.75V ~ 5.25V
RF Type: 4G, 5G
Frequency: 2.3GHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 398.05 грн |
| 10+ | 331.77 грн |
| 25+ | 313.82 грн |
| 100+ | 271.45 грн |
| 250+ | 257.62 грн |
| 500+ | 247.85 грн |
| CY7C1615KV18-333BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 525 шт
В кошику
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| FP15R12W2T4BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
Description: IGBT MOD 1200V 30A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2665.83 грн |
| CY14B108L-ZS45XIT |
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Виробник: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| S29GL01GS11FAIV23 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| FS10R06VE3BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
Description: IGBT MODULE 600V 16A 50W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 1330.85 грн |
| FS10R06VE3BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
Description: IGBT MODULE 600V 16A 50W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| CY9AF142LAPMC1-G-MNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 701.74 грн |
| 10+ | 610.16 грн |
| 25+ | 581.80 грн |
| 160+ | 474.08 грн |
| 320+ | 452.77 грн |
| 480+ | 412.82 грн |
| 960+ | 353.66 грн |
| IAUAN04S7N008AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IAUAN04S7N008AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.98 грн |
| 10+ | 141.18 грн |
| IAUAN04S7N007AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IAUAN04S7N007AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
на замовлення 151 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.26 грн |
| 10+ | 150.50 грн |
| 100+ | 104.49 грн |
| IAUAN04S7N006AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 95µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Description: IAUAN04S7N006AUMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 95µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IAUAN04S7N006AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 95µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Description: IAUAN04S7N006AUMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 95µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 455 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.78 грн |
| 10+ | 149.96 грн |
| 100+ | 115.13 грн |
| IAUAN04S7N005AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 110µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Description: IAUAN04S7N005AUMA1
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 110µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 89.50 грн |
| IAUAN04S7N005AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 110µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Description: IAUAN04S7N005AUMA1
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 110µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
на замовлення 2032 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.02 грн |
| 10+ | 164.39 грн |
| 100+ | 128.29 грн |
| 500+ | 98.36 грн |
| 1000+ | 95.37 грн |
| IAUAN04S7N004AUMA1 |
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Виробник: Infineon Technologies
Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IAUAN04S7N004AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IAUAN04S7N004AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
Description: IAUAN04S7N004AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 343.34 грн |
| 10+ | 218.53 грн |
| 50+ | 170.44 грн |
| 100+ | 145.43 грн |
| KITA2GTC3975VTRBSTOBO1 |
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Виробник: Infineon Technologies
Description: AURIX TC397 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Socket
Description: AURIX TC397 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Socket
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 149432.19 грн |
| FS100R17KE3BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 145A 555W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MOD 1700V 145A 555W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| IFS200B12N3E4B37BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.



























