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IPB95R310PFD7ATMA1 IPB95R310PFD7ATMA1 Infineon Technologies Infineon-IPB95R310PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb45264031b Description: LOW POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+117.40 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB95R310PFD7ATMA1 IPB95R310PFD7ATMA1 Infineon Technologies Infineon-IPB95R310PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb45264031b Description: LOW POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
2+322.76 грн
10+205.59 грн
100+146.26 грн
500+124.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPTC020N13NM6ATMA1 IPTC020N13NM6ATMA1 Infineon Technologies Infineon-IPTC020N13NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e74cd86a12ebc Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+289.61 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPTC020N13NM6ATMA1 IPTC020N13NM6ATMA1 Infineon Technologies Infineon-IPTC020N13NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e74cd86a12ebc Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 2156 шт:
термін постачання 21-31 дні (днів)
1+653.18 грн
10+430.28 грн
100+341.36 грн
В кошику  од. на суму  грн.
ISZ143N13NM6ATMA1 ISZ143N13NM6ATMA1 Infineon Technologies ISZ143N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V
Power Dissipation (Max): 2.5W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TSDSON-8-36
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V
товару немає в наявності
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ISZ143N13NM6ATMA1 ISZ143N13NM6ATMA1 Infineon Technologies ISZ143N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V
Power Dissipation (Max): 2.5W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TSDSON-8-36
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V
на замовлення 4910 шт:
термін постачання 21-31 дні (днів)
3+151.58 грн
10+116.20 грн
100+98.38 грн
500+81.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC046N13NM6ATMA1 ISC046N13NM6ATMA1 Infineon Technologies ISC046N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V
товару немає в наявності
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ISC046N13NM6ATMA1 ISC046N13NM6ATMA1 Infineon Technologies ISC046N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
1+378.96 грн
10+242.57 грн
100+173.18 грн
500+155.09 грн
В кошику  од. на суму  грн.
ISC037N13NM6ATMA1 ISC037N13NM6ATMA1 Infineon Technologies ISC037N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V
товару немає в наявності
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ISC037N13NM6ATMA1 ISC037N13NM6ATMA1 Infineon Technologies ISC037N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V
на замовлення 3780 шт:
термін постачання 21-31 дні (днів)
2+302.32 грн
10+219.61 грн
100+164.68 грн
500+151.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPT020N13NM6ATMA1 IPT020N13NM6ATMA1 Infineon Technologies infineon-ipt020n13nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+168.94 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT020N13NM6ATMA1 IPT020N13NM6ATMA1 Infineon Technologies infineon-ipt020n13nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 2197 шт:
термін постачання 21-31 дні (днів)
1+435.17 грн
10+280.71 грн
100+202.13 грн
500+186.87 грн
В кошику  од. на суму  грн.
IPTG020N13NM6ATMA1 IPTG020N13NM6ATMA1 Infineon Technologies IPTG020N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
товару немає в наявності
В кошику  од. на суму  грн.
IPTG020N13NM6ATMA1 IPTG020N13NM6ATMA1 Infineon Technologies IPTG020N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 1010 шт:
термін постачання 21-31 дні (днів)
1+632.74 грн
10+415.93 грн
100+327.15 грн
В кошику  од. на суму  грн.
IPI90R1K2C3XKSA2 IPI90R1K2C3XKSA2 Infineon Technologies Infineon-IPI90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a85db6ae5bb3 Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)
341+71.36 грн
Мінімальне замовлення: 341
В кошику  од. на суму  грн.
FZ2400R17HP4B9HOSA2 Infineon Technologies Infineon-FZ2400R17HP4_B9-DS-v02_02-en_de.pdf?fileId=db3a30432313ff5e01235608d9e11615 Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
1+96010.11 грн
В кошику  од. на суму  грн.
CY8C5247LTI-089 CY8C5247LTI-089 Infineon Technologies CY8C52.pdf Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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XDPL8220XUMA1 XDPL8220XUMA1 Infineon Technologies Infineon-XDPL8220-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a015887029bcb5f03 Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
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EVALIHW25N140R5LTOBO1 EVALIHW25N140R5LTOBO1 Infineon Technologies Infineon-EVAL-IHW25N140R5L-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18c78e023a8d Description: EVAL BOARD FOR IHW25N140R5L
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IHW25N140R5L
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8036.54 грн
В кошику  од. на суму  грн.
CY15E004Q-SXAT CY15E004Q-SXAT Infineon Technologies CY15E004Q_RevC_6-4-19.pdf Description: IC FRAM 4KBIT SPI 20MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C21634-24LTXI CY8C21634-24LTXI Infineon Technologies Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
товару немає в наявності
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CG7475AFT Infineon Technologies Description: IC
Packaging: Bulk
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S98FL512SDSMFBG00 Infineon Technologies Description: IC FLASH 512MBIT SPI
Packaging: Tray
Memory Size: 512Mbit
Memory Format: FLASH
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CYTVII-B-H-176-SO Infineon Technologies Infineon-002-25907_0C_CYTVII-B-H-8M-176-CPU_EVALUATION_BOARD-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018baddfdf637dd4 Description: Eval
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
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ICC80QSGXUMA1 ICC80QSGXUMA1 Infineon Technologies Infineon-ICC80QSG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180b1cf85f62eaa Description: FLYBACK CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Supplier Device Package: PG-DSO-8
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 23V
Current - Charging: Constant - Programmable
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ICC80QSGXUMA1 ICC80QSGXUMA1 Infineon Technologies Infineon-ICC80QSG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180b1cf85f62eaa Description: FLYBACK CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Supplier Device Package: PG-DSO-8
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 23V
Current - Charging: Constant - Programmable
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
6+57.06 грн
10+39.36 грн
25+35.43 грн
100+29.15 грн
250+27.20 грн
500+26.02 грн
1000+24.64 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ISSI20R03HXUMA1 ISSI20R03HXUMA1 Infineon Technologies ISSIx0RyyH_1.0_12-06-23.pdf Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
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ISSI20R03HXUMA1 ISSI20R03HXUMA1 Infineon Technologies ISSIx0RyyH_1.0_12-06-23.pdf Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
2+260.59 грн
10+188.45 грн
25+172.70 грн
100+145.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISSI20R02HXUMA1 ISSI20R02HXUMA1 Infineon Technologies ISSIx0RyyH_1.0_12-06-23.pdf Description: ISSI20R02HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
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ISSI20R02HXUMA1 ISSI20R02HXUMA1 Infineon Technologies ISSIx0RyyH_1.0_12-06-23.pdf Description: ISSI20R02HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
2+261.44 грн
10+226.01 грн
25+213.67 грн
100+173.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISSI20R11HXUMA1 ISSI20R11HXUMA1 Infineon Technologies ISSIx0RyyH_1.0_12-06-23.pdf Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+168.21 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ISSI20R11HXUMA1 ISSI20R11HXUMA1 Infineon Technologies ISSIx0RyyH_1.0_12-06-23.pdf Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 1081 шт:
термін постачання 21-31 дні (днів)
2+302.32 грн
10+219.28 грн
25+201.34 грн
100+170.50 грн
250+161.69 грн
500+156.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S6E2C4AJ0AGB1000A S6E2C4AJ0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
на замовлення 1653 шт:
термін постачання 21-31 дні (днів)
1+1424.72 грн
10+1099.78 грн
25+1031.70 грн
168+904.82 грн
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S6E2C4AH0AGV2000A S6E2C4AH0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+1557.57 грн
10+1205.49 грн
60+1077.27 грн
120+997.05 грн
В кошику  од. на суму  грн.
S6E2C58H0AGV2000A S6E2C58H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+1557.57 грн
10+1205.49 грн
60+1077.27 грн
120+997.05 грн
В кошику  од. на суму  грн.
S6E2C4AL0AGL2000A S6E2C4AL0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6E2C4AJ0AGV2000A S6E2C4AJ0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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TD92N16KOFHPSA2 Infineon Technologies infineon-tt92n-datasheet-en.pdf?fileId=db3a304412b407950112b42f75684ba1 Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
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TT104N14KOFHPSA2 Infineon Technologies Infineon-TT104N-DataSheet-v03_03-EN.pdf?fileId=db3a304412b407950112b42f760f4ba5 Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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TD104N14KOFAHPSA1 Infineon Technologies Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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TD104N14KOFAHPSA2 Infineon Technologies infineon-tt104n-datasheet-en.pdf Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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TD92N16KOFAHPSA1 Infineon Technologies TT92N.pdf Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
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TD104N12KOFHPSA1 TD104N12KOFHPSA1 Infineon Technologies Infineon-TT104N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f760f4ba5 Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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TD92N12KOFHPSA1 Infineon Technologies TT92N.pdf Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
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S29GL256S90FHSS30 S29GL256S90FHSS30 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CYT2B64BADQ0AZEGST CYT2B64BADQ0AZEGST Infineon Technologies Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
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CY9BF528TBGL-GK7E1 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, FIFO, HDMI-CEC, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
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BCM856SH6433XTMA1 BCM856SH6433XTMA1 Infineon Technologies bcm856s.pdf?folderId=db3a30431441fb5d011449d262020243&fileId=db3a30431441fb5d011449d4974a0245 Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
на замовлення 86356 шт:
термін постачання 21-31 дні (днів)
4139+5.68 грн
Мінімальне замовлення: 4139
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IDD09SG60CXTMA1 IDD09SG60CXTMA1 Infineon Technologies Infineon-IDD09SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd6a2f7d1aab Description: DIODE SIL CARB 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
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CY7C4211V-15AI CY7C4211V-15AI Infineon Technologies CY7C42x1V_Rev2015.pdf Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 66.7MHz
Access Time: 10ns
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY7C4211-15AC CY7C4211-15AC Infineon Technologies CY7C4xx1_RevC.pdf Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY7C4215V-15ASC CY7C4215V-15ASC Infineon Technologies CY7C4xx5V_RevC.pdf Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY7C4211-15AXC CY7C4211-15AXC Infineon Technologies CY7C4xx1_RevC.pdf Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Tube
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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XC2365A72F80LAAKXUMA1 XC2365A72F80LAAKXUMA1 Infineon Technologies XC236xA_v2.12_2014-06.pdf Description: IC MCU 16/32BIT 576KB FLASH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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S25FL128SDPBHB213 S25FL128SDPBHB213 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY62137EV30LL-45BVXIT CY62137EV30LL-45BVXIT Infineon Technologies Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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AUIRFSL8405 AUIRFSL8405 Infineon Technologies auirfs8405.pdf?fileId=5546d462533600a4015355b7069d14de Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
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CY8C4147LQSS285XQLA1 CY8C4147LQSS285XQLA1 Infineon Technologies Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33 Description: IC MCU 32BIT 128KB FLASH
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 54
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
1+505.85 грн
10+375.18 грн
25+347.21 грн
100+296.99 грн
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CY62177EV30LL-55BAXIT CY62177EV30LL-55BAXIT Infineon Technologies Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 32MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
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S29GL256P90FFIR12 S29GL256P90FFIR12 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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IPB95R310PFD7ATMA1 Infineon-IPB95R310PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb45264031b
IPB95R310PFD7ATMA1
Виробник: Infineon Technologies
Description: LOW POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+117.40 грн
Мінімальне замовлення: 1000
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IPB95R310PFD7ATMA1 Infineon-IPB95R310PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb45264031b
IPB95R310PFD7ATMA1
Виробник: Infineon Technologies
Description: LOW POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+322.76 грн
10+205.59 грн
100+146.26 грн
500+124.23 грн
Мінімальне замовлення: 2
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IPTC020N13NM6ATMA1 Infineon-IPTC020N13NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e74cd86a12ebc
IPTC020N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+289.61 грн
Мінімальне замовлення: 1800
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IPTC020N13NM6ATMA1 Infineon-IPTC020N13NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e74cd86a12ebc
IPTC020N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 2156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+653.18 грн
10+430.28 грн
100+341.36 грн
В кошику  од. на суму  грн.
ISZ143N13NM6ATMA1 ISZ143N13NM6_Rev2.0_10-16-23.pdf
ISZ143N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V
Power Dissipation (Max): 2.5W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TSDSON-8-36
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V
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ISZ143N13NM6ATMA1 ISZ143N13NM6_Rev2.0_10-16-23.pdf
ISZ143N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V
Power Dissipation (Max): 2.5W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TSDSON-8-36
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V
на замовлення 4910 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.58 грн
10+116.20 грн
100+98.38 грн
500+81.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC046N13NM6ATMA1 ISC046N13NM6_Rev2.0_10-16-23.pdf
ISC046N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V
товару немає в наявності
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ISC046N13NM6ATMA1 ISC046N13NM6_Rev2.0_10-16-23.pdf
ISC046N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+378.96 грн
10+242.57 грн
100+173.18 грн
500+155.09 грн
В кошику  од. на суму  грн.
ISC037N13NM6ATMA1 ISC037N13NM6_Rev2.0_10-16-23.pdf
ISC037N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V
товару немає в наявності
В кошику  од. на суму  грн.
ISC037N13NM6ATMA1 ISC037N13NM6_Rev2.0_10-16-23.pdf
ISC037N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V
на замовлення 3780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+302.32 грн
10+219.61 грн
100+164.68 грн
500+151.48 грн
Мінімальне замовлення: 2
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IPT020N13NM6ATMA1 infineon-ipt020n13nm6-datasheet-en.pdf
IPT020N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+168.94 грн
Мінімальне замовлення: 2000
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IPT020N13NM6ATMA1 infineon-ipt020n13nm6-datasheet-en.pdf
IPT020N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 2197 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+435.17 грн
10+280.71 грн
100+202.13 грн
500+186.87 грн
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IPTG020N13NM6ATMA1 IPTG020N13NM6_Rev2.0_10-16-23.pdf
IPTG020N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
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IPTG020N13NM6ATMA1 IPTG020N13NM6_Rev2.0_10-16-23.pdf
IPTG020N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 1010 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+632.74 грн
10+415.93 грн
100+327.15 грн
В кошику  од. на суму  грн.
IPI90R1K2C3XKSA2 Infineon-IPI90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a85db6ae5bb3
IPI90R1K2C3XKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
341+71.36 грн
Мінімальне замовлення: 341
В кошику  од. на суму  грн.
FZ2400R17HP4B9HOSA2 Infineon-FZ2400R17HP4_B9-DS-v02_02-en_de.pdf?fileId=db3a30432313ff5e01235608d9e11615
Виробник: Infineon Technologies
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+96010.11 грн
В кошику  од. на суму  грн.
CY8C5247LTI-089 CY8C52.pdf
CY8C5247LTI-089
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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XDPL8220XUMA1 Infineon-XDPL8220-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a015887029bcb5f03
XDPL8220XUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
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EVALIHW25N140R5LTOBO1 Infineon-EVAL-IHW25N140R5L-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18c78e023a8d
EVALIHW25N140R5LTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IHW25N140R5L
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IHW25N140R5L
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8036.54 грн
В кошику  од. на суму  грн.
CY15E004Q-SXAT CY15E004Q_RevC_6-4-19.pdf
CY15E004Q-SXAT
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 20MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C21634-24LTXI Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a
CY8C21634-24LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CG7475AFT
Виробник: Infineon Technologies
Description: IC
Packaging: Bulk
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S98FL512SDSMFBG00
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI
Packaging: Tray
Memory Size: 512Mbit
Memory Format: FLASH
товару немає в наявності
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CYTVII-B-H-176-SO Infineon-002-25907_0C_CYTVII-B-H-8M-176-CPU_EVALUATION_BOARD-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018baddfdf637dd4
Виробник: Infineon Technologies
Description: Eval
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
товару немає в наявності
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ICC80QSGXUMA1 Infineon-ICC80QSG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180b1cf85f62eaa
ICC80QSGXUMA1
Виробник: Infineon Technologies
Description: FLYBACK CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Supplier Device Package: PG-DSO-8
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 23V
Current - Charging: Constant - Programmable
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ICC80QSGXUMA1 Infineon-ICC80QSG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180b1cf85f62eaa
ICC80QSGXUMA1
Виробник: Infineon Technologies
Description: FLYBACK CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Supplier Device Package: PG-DSO-8
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 23V
Current - Charging: Constant - Programmable
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.06 грн
10+39.36 грн
25+35.43 грн
100+29.15 грн
250+27.20 грн
500+26.02 грн
1000+24.64 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ISSI20R03HXUMA1 ISSIx0RyyH_1.0_12-06-23.pdf
ISSI20R03HXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
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ISSI20R03HXUMA1 ISSIx0RyyH_1.0_12-06-23.pdf
ISSI20R03HXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+260.59 грн
10+188.45 грн
25+172.70 грн
100+145.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISSI20R02HXUMA1 ISSIx0RyyH_1.0_12-06-23.pdf
ISSI20R02HXUMA1
Виробник: Infineon Technologies
Description: ISSI20R02HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
товару немає в наявності
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ISSI20R02HXUMA1 ISSIx0RyyH_1.0_12-06-23.pdf
ISSI20R02HXUMA1
Виробник: Infineon Technologies
Description: ISSI20R02HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+261.44 грн
10+226.01 грн
25+213.67 грн
100+173.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISSI20R11HXUMA1 ISSIx0RyyH_1.0_12-06-23.pdf
ISSI20R11HXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+168.21 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ISSI20R11HXUMA1 ISSIx0RyyH_1.0_12-06-23.pdf
ISSI20R11HXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 1081 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+302.32 грн
10+219.28 грн
25+201.34 грн
100+170.50 грн
250+161.69 грн
500+156.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S6E2C4AJ0AGB1000A download
S6E2C4AJ0AGB1000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
на замовлення 1653 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1424.72 грн
10+1099.78 грн
25+1031.70 грн
168+904.82 грн
В кошику  од. на суму  грн.
S6E2C4AH0AGV2000A download
S6E2C4AH0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1557.57 грн
10+1205.49 грн
60+1077.27 грн
120+997.05 грн
В кошику  од. на суму  грн.
S6E2C58H0AGV2000A download
S6E2C58H0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1557.57 грн
10+1205.49 грн
60+1077.27 грн
120+997.05 грн
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S6E2C4AL0AGL2000A download
S6E2C4AL0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6E2C4AJ0AGV2000A download
S6E2C4AJ0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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TD92N16KOFHPSA2 infineon-tt92n-datasheet-en.pdf?fileId=db3a304412b407950112b42f75684ba1
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
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TT104N14KOFHPSA2 Infineon-TT104N-DataSheet-v03_03-EN.pdf?fileId=db3a304412b407950112b42f760f4ba5
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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TD104N14KOFAHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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TD104N14KOFAHPSA2 infineon-tt104n-datasheet-en.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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TD92N16KOFAHPSA1 TT92N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
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TD104N12KOFHPSA1 Infineon-TT104N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f760f4ba5
TD104N12KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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TD92N12KOFHPSA1 TT92N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
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S29GL256S90FHSS30 PdfFile_133368.pdf
S29GL256S90FHSS30
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CYT2B64BADQ0AZEGST Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd
CYT2B64BADQ0AZEGST
Виробник: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
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CY9BF528TBGL-GK7E1
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, FIFO, HDMI-CEC, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
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BCM856SH6433XTMA1 bcm856s.pdf?folderId=db3a30431441fb5d011449d262020243&fileId=db3a30431441fb5d011449d4974a0245
BCM856SH6433XTMA1
Виробник: Infineon Technologies
Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
на замовлення 86356 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4139+5.68 грн
Мінімальне замовлення: 4139
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IDD09SG60CXTMA1 Infineon-IDD09SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd6a2f7d1aab
IDD09SG60CXTMA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
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CY7C4211V-15AI CY7C42x1V_Rev2015.pdf
CY7C4211V-15AI
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 66.7MHz
Access Time: 10ns
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY7C4211-15AC CY7C4xx1_RevC.pdf
CY7C4211-15AC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY7C4215V-15ASC CY7C4xx5V_RevC.pdf
CY7C4215V-15ASC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY7C4211-15AXC CY7C4xx1_RevC.pdf
CY7C4211-15AXC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Tube
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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XC2365A72F80LAAKXUMA1 XC236xA_v2.12_2014-06.pdf
XC2365A72F80LAAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32BIT 576KB FLASH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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S25FL128SDPBHB213 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDPBHB213
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY62137EV30LL-45BVXIT Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62137EV30LL-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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AUIRFSL8405 auirfs8405.pdf?fileId=5546d462533600a4015355b7069d14de
AUIRFSL8405
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
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CY8C4147LQSS285XQLA1 Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33
CY8C4147LQSS285XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 54
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+505.85 грн
10+375.18 грн
25+347.21 грн
100+296.99 грн
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CY62177EV30LL-55BAXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62177EV30LL-55BAXIT
Виробник: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
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S29GL256P90FFIR12 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL256P90FFIR12
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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