Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123044) > Сторінка 703 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPB95R310PFD7ATMA1 | Infineon Technologies |
Description: LOW POWER_NEWPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V |
на замовлення 5444 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPTC020N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPTC020N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V |
на замовлення 2096 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ISZ143N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V Power Dissipation (Max): 2.5W (Ta), 95W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 35µA Supplier Device Package: PG-TSDSON-8-36 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
|
ISZ143N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V Power Dissipation (Max): 2.5W (Ta), 95W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 35µA Supplier Device Package: PG-TSDSON-8-36 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V |
на замовлення 4775 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ISC046N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 110µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ISC046N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 110µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V |
на замовлення 14780 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ISC037N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ISC037N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V |
на замовлення 5869 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPT020N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPT020N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V |
на замовлення 2771 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPTG020N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
|
IPTG020N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V |
на замовлення 590 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPI90R1K2C3XKSA2 | Infineon Technologies |
Description: MOSFET N-CH 900V 5.1A TO262-3Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 310µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
на замовлення 1890 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| FZ2400R17HP4B9HOSA2 | Infineon Technologies |
Description: PP, IHM I, XHP 1,7KVPackaging: Bulk |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
CY8C5247LTI-089 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x12b; D/A 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
XDPL8220XUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL PWM 16DSOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 50MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Internal Switch(s): No Topology: Flyback Supplier Device Package: PG-DSO-16 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 24V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
EVALIHW25N140R5LTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IHW25N140R5LPackaging: Bulk Function: Gate Driver Type: Power Management Utilized IC / Part: IHW25N140R5L Supplied Contents: Board(s) Embedded: Yes, MCU Contents: Board(s) Secondary Attributes: On-Board LEDs, Test Points |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
CY15E004Q-SXAT | Infineon Technologies |
Description: IC FRAM 4KBIT SPI 20MHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Grade: Automotive Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
CY8C21634-24LTXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFNDigiKey Programmable: Not Verified Number of I/O: 28 Supplier Device Package: 32-QFN (5x5) Peripherals: POR, PWM, WDT Connectivity: I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Core Size: 8-Bit Data Converters: A/D 28x8b Core Processor: M8C Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 512 x 8 Program Memory Size: 8KB (8K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CG7475AFT | Infineon Technologies |
Description: IC MEMORY Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S98FL512SDSMFBG00 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI Memory Format: FLASH Memory Size: 512Mbit Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | |||||||||||||||
|
CYTVII-B-H-176-SO | Infineon Technologies |
Description: EvalPackaging: Bulk Mounting Type: Socket Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M7 Utilized IC / Part: CYT4BF |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ICC80QSGXUMA1 | Infineon Technologies |
Description: FLYBACK CONTROLLERPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Cells: 1 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C (TJ) Supplier Device Package: PG-DSO-8 Programmable Features: Current, Timer, Voltage Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Voltage - Supply (Max): 23V Current - Charging: Constant - Programmable |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
ICC80QSGXUMA1 | Infineon Technologies |
Description: FLYBACK CONTROLLERPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Cells: 1 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C (TJ) Supplier Device Package: PG-DSO-8 Programmable Features: Current, Timer, Voltage Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Voltage - Supply (Max): 23V Current - Charging: Constant - Programmable |
на замовлення 2499 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ISSI20R03HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 1CH 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.85V ~ 3.5V Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 1/1 Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 8µs, 1.9µs Propagation Delay tpLH / tpHL (Max): 20µs, 6µs Isolated Power: No Channel Type: Unidirectional Number of Channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
ISSI20R03HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 1CH 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.85V ~ 3.5V Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 1/1 Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 8µs, 1.9µs Propagation Delay tpLH / tpHL (Max): 20µs, 6µs Isolated Power: No Channel Type: Unidirectional Number of Channels: 1 |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ISSI20R02HXUMA1 | Infineon Technologies |
Description: ISSI20R02HXUMA1Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.85V ~ 3.5V Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 1/1 Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 8µs, 1.9µs Propagation Delay tpLH / tpHL (Max): 20µs, 6µs Isolated Power: No Channel Type: Unidirectional Number of Channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
ISSI20R02HXUMA1 | Infineon Technologies |
Description: ISSI20R02HXUMA1Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.85V ~ 3.5V Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 1/1 Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 8µs, 1.9µs Propagation Delay tpLH / tpHL (Max): 20µs, 6µs Isolated Power: No Channel Type: Unidirectional Number of Channels: 1 |
на замовлення 212 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ISSI20R11HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 1CH 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.85V ~ 3.5V Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 1/1 Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 8µs, 1.9µs Propagation Delay tpLH / tpHL (Max): 20µs, 6µs Isolated Power: No Channel Type: Unidirectional Number of Channels: 1 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ISSI20R11HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 1CH 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.85V ~ 3.5V Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 1/1 Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 8µs, 1.9µs Propagation Delay tpLH / tpHL (Max): 20µs, 6µs Isolated Power: No Channel Type: Unidirectional Number of Channels: 1 |
на замовлення 1081 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S6E2C4AJ0AGB1000A | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 192FBGAPackaging: Tray Package / Case: 192-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 192-FBGA (12x12) Number of I/O: 152 DigiKey Programmable: Not Verified |
на замовлення 1653 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S6E2C4AH0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 144LQFPPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S6E2C58H0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 144LQFPPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S6E2C4AL0AGL2000A | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 216LQFPPackaging: Tray Package / Case: 216-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 216-LQFP (24x24) Number of I/O: 190 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
|
S6E2C4AJ0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 176LQFPPackaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 152 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
| TD92N16KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1.6KV 160A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 140°C (TJ) Structure: Common Anode - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 102 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||
| TT104N14KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1.4KV 160A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 140°C (TJ) Structure: Common Anode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 102 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.4 kV |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||
| TD104N14KOFAHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 160A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.4 kV |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||
| TD104N14KOFAHPSA2 | Infineon Technologies |
Description: SCR MODULE 1.4KV 160A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 140°C (TJ) Structure: Common Anode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 102 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.4 kV |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||
| TD92N16KOFAHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 160A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 102 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
TD104N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 160A MODULEVoltage - Off State: 1.4 kV Current - On State (It (RMS)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (AV)) (Max): 104 A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Current - Gate Trigger (Igt) (Max): 120 mA Current - Hold (Ih) (Max): 200 mA Structure: Series Connection - SCR/Diode Operating Temperature: -40°C ~ 140°C Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TD92N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 160A MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (AV)) (Max): 104 A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Current - Gate Trigger (Igt) (Max): 120 mA Current - Hold (Ih) (Max): 200 mA Structure: Series Connection - SCR/Diode Operating Temperature: -40°C ~ 130°C Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
S29GL256S90FHSS30 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 16M x 16 Access Time: 90 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
|
CYT2B64BADQ0AZEGST | Infineon Technologies |
Description: IC MCU 32BIT 576KB FLASH 80LQFPDigiKey Programmable: Not Verified Number of I/O: 59 Supplier Device Package: 80-LQFP (12x12) Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Data Converters: A/D 28x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 64K x 8 Program Memory Size: 576KB (576K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
| CY9BF528TBGL-GK7E1 | Infineon Technologies |
Description: MULTI-MARKET MCUS Connectivity: CANbus, CSIO, FIFO, HDMI-CEC, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 24x12b SAR; D/A 2x10b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 160K x 8 Program Memory Size: 1MB (1M x 8) Speed: 60MHz Mounting Type: Surface Mount Package / Case: 192-LFBGA Packaging: Tray Number of I/O: 154 Supplier Device Package: 192-FBGA (12x12) Peripherals: DMA, LVD, POR, PWM, WDT |
товару немає в наявності |
Мінімальне замовлення: 1520 шт В кошику од. на суму грн. | |||||||||||||||
|
BCM856SH6433XTMA1 | Infineon Technologies |
Description: TRANS 2PNP 65V 0.1A PG-SOT363-POPackaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT363-PO |
на замовлення 86356 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IDD09SG60CXTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 600V 9A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 280pF @ 1V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A Current - Reverse Leakage @ Vr: 80 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
CY7C4211V-15AI | Infineon Technologies |
Description: IC FIFO SYNC 512X9 10NS 32TQFPPackaging: Bag Package / Case: 32-TQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (512 x 9) Operating Temperature: -40°C ~ 85°C Data Rate: 66.7MHz Access Time: 10ns Supplier Device Package: 32-TQFP (7x7) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: No Retransmit Capability: Yes FWFT Support: No Voltage - Supply: 3 V ~ 3.6 V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
CY7C4211-15AC | Infineon Technologies |
Description: IC FIFO SYNC 512X9 10NS 32TQFPPackaging: Bag Package / Case: 32-TQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (512 x 9) Operating Temperature: 0°C ~ 70°C Data Rate: 66.7MHz Access Time: 10ns Current - Supply (Max): 35mA Supplier Device Package: 32-TQFP (7x7) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: No FWFT Support: No Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
CY7C4215V-15ASC | Infineon Technologies |
Description: IC FIFO SYNC 512X18 11NS 64TQFPPackaging: Bag Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 9K (512 x 18) Operating Temperature: 0°C ~ 70°C Data Rate: 66.7MHz Access Time: 11ns Current - Supply (Max): 30mA Supplier Device Package: 64-TQFP (10x10) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: Yes FWFT Support: No Voltage - Supply: 3 V ~ 3.6 V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
CY7C4211-15AXC | Infineon Technologies |
Description: IC FIFO SYNC 512X9 10NS 32TQFPPackaging: Tube Package / Case: 32-TQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (512 x 9) Operating Temperature: 0°C ~ 70°C Data Rate: 66.7MHz Access Time: 10ns Current - Supply (Max): 35mA Supplier Device Package: 32-TQFP (7x7) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: No FWFT Support: No Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
XC2365A72F80LAAKXUMA1 | Infineon Technologies |
Description: IC MCU 16/32BIT 576KB FLASHPackaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 75 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
S25FL128SDPBHB213 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 24BGAPackaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Grade: Automotive Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
CY62137EV30LL-45BVXIT | Infineon Technologies |
Description: IC SRAM 2MBIT PARALLEL 48VFBGAPackaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
|
AUIRFSL8405 | Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
CY8C4147LQSS285XQLA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASHPackaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 54 |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
CY62177EV30LL-55BAXIT | Infineon Technologies |
Description: IC SRAM 32MBIT PARALLEL 48FBGAPackaging: Tape & Reel (TR) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.7V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-FBGA (8x9.5) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 4M x 8, 2M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
|
S29GL256P90FFIR12 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
|
2ED300C17SROHSBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 30AVoltage - Collector Emitter Breakdown (Max): 1700 V Supplier Device Package: Module NTC Thermistor: No Operating Temperature: -25°C ~ 85°C Configuration: Half Bridge Input: Standard Mounting Type: Through Hole Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. |
| IPB95R310PFD7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: LOW POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V
Description: LOW POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V
на замовлення 5444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 321.59 грн |
| 10+ | 202.97 грн |
| 100+ | 142.41 грн |
| 500+ | 109.37 грн |
| IPTC020N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 233.94 грн |
| IPTC020N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 2096 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 583.51 грн |
| 10+ | 382.13 грн |
| 100+ | 280.39 грн |
| 500+ | 258.77 грн |
| ISZ143N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V
Power Dissipation (Max): 2.5W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TSDSON-8-36
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V
Power Dissipation (Max): 2.5W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TSDSON-8-36
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISZ143N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V
Power Dissipation (Max): 2.5W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TSDSON-8-36
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V
Power Dissipation (Max): 2.5W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TSDSON-8-36
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V
на замовлення 4775 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.82 грн |
| 10+ | 142.90 грн |
| 100+ | 99.16 грн |
| 500+ | 75.53 грн |
| 1000+ | 73.99 грн |
| ISC046N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 139.43 грн |
| ISC046N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 68 V
на замовлення 14780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 395.98 грн |
| 10+ | 254.01 грн |
| 100+ | 181.94 грн |
| 500+ | 154.23 грн |
| ISC037N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 124.26 грн |
| ISC037N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 68 V
на замовлення 5869 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 360.33 грн |
| 10+ | 230.58 грн |
| 100+ | 164.52 грн |
| 500+ | 137.45 грн |
| IPT020N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 196.38 грн |
| IPT020N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 2771 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 511.44 грн |
| 10+ | 332.51 грн |
| 100+ | 242.02 грн |
| 500+ | 217.22 грн |
| IPTG020N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| IPTG020N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 590 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 605.98 грн |
| 10+ | 398.47 грн |
| 100+ | 293.66 грн |
| 500+ | 274.90 грн |
| IPI90R1K2C3XKSA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: MOSFET N-CH 900V 5.1A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 341+ | 64.93 грн |
| FZ2400R17HP4B9HOSA2 |
![]() |
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 87363.87 грн |
| CY8C5247LTI-089 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| XDPL8220XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
товару немає в наявності
В кошику
од. на суму грн.
| EVALIHW25N140R5LTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IHW25N140R5L
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: IHW25N140R5L
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
Description: EVAL BOARD FOR IHW25N140R5L
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: IHW25N140R5L
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7312.80 грн |
| CY15E004Q-SXAT |
![]() |
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 20MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FRAM 4KBIT SPI 20MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY8C21634-24LTXI |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 28x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 8BIT 8KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 28x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| S98FL512SDSMFBG00 |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI
Memory Format: FLASH
Memory Size: 512Mbit
Packaging: Tray
Description: IC FLASH 512MBIT SPI
Memory Format: FLASH
Memory Size: 512Mbit
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2400 шт
В кошику
од. на суму грн.
| CYTVII-B-H-176-SO |
![]() |
Виробник: Infineon Technologies
Description: Eval
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
Description: Eval
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 99687.22 грн |
| ICC80QSGXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: FLYBACK CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Supplier Device Package: PG-DSO-8
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 23V
Current - Charging: Constant - Programmable
Description: FLYBACK CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Supplier Device Package: PG-DSO-8
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 23V
Current - Charging: Constant - Programmable
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ICC80QSGXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: FLYBACK CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Supplier Device Package: PG-DSO-8
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 23V
Current - Charging: Constant - Programmable
Description: FLYBACK CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Supplier Device Package: PG-DSO-8
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 23V
Current - Charging: Constant - Programmable
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 35.82 грн |
| 25+ | 32.24 грн |
| 100+ | 26.53 грн |
| 250+ | 24.75 грн |
| 500+ | 23.68 грн |
| 1000+ | 22.42 грн |
| ISSI20R03HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ISSI20R03HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 237.12 грн |
| 10+ | 171.48 грн |
| 25+ | 157.15 грн |
| 100+ | 132.74 грн |
| ISSI20R02HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISSI20R02HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
Description: ISSI20R02HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ISSI20R02HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISSI20R02HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
Description: ISSI20R02HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 237.90 грн |
| 10+ | 205.65 грн |
| 25+ | 194.43 грн |
| 100+ | 158.12 грн |
| ISSI20R11HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 153.06 грн |
| ISSI20R11HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
Description: DGTL ISOLTR 5.7KV 1CH 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.85V ~ 3.5V
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 8µs, 1.9µs
Propagation Delay tpLH / tpHL (Max): 20µs, 6µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 1
на замовлення 1081 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.09 грн |
| 10+ | 199.54 грн |
| 25+ | 183.21 грн |
| 100+ | 155.14 грн |
| 250+ | 147.12 грн |
| 500+ | 142.30 грн |
| S6E2C4AJ0AGB1000A |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
на замовлення 1653 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1296.42 грн |
| 10+ | 1000.74 грн |
| 25+ | 938.79 грн |
| 168+ | 823.34 грн |
| S6E2C4AH0AGV2000A |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1417.31 грн |
| 10+ | 1096.92 грн |
| 60+ | 980.26 грн |
| 120+ | 907.26 грн |
| S6E2C58H0AGV2000A |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1417.31 грн |
| 10+ | 1096.92 грн |
| 60+ | 980.26 грн |
| 120+ | 907.26 грн |
| S6E2C4AL0AGL2000A |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| S6E2C4AJ0AGV2000A |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| TD92N16KOFHPSA2 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| TT104N14KOFHPSA2 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| TD104N14KOFAHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| TD104N14KOFAHPSA2 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| TD92N16KOFAHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику
од. на суму грн.
| TD104N12KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 104 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 140°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1.4KV 160A MODULE
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 104 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 140°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| TD92N12KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 104 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1.6KV 160A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 104 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| S29GL256S90FHSS30 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Description: IC FLASH 256MBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| CYT2B64BADQ0AZEGST |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: 80-LQFP (12x12)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 28x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 576KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: 80-LQFP (12x12)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 28x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| CY9BF528TBGL-GK7E1 |
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Connectivity: CANbus, CSIO, FIFO, HDMI-CEC, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 160K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 60MHz
Mounting Type: Surface Mount
Package / Case: 192-LFBGA
Packaging: Tray
Number of I/O: 154
Supplier Device Package: 192-FBGA (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Description: MULTI-MARKET MCUS
Connectivity: CANbus, CSIO, FIFO, HDMI-CEC, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 160K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 60MHz
Mounting Type: Surface Mount
Package / Case: 192-LFBGA
Packaging: Tray
Number of I/O: 154
Supplier Device Package: 192-FBGA (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
товару немає в наявності
Мінімальне замовлення: 1520 шт
В кошику
од. на суму грн.
| BCM856SH6433XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
на замовлення 86356 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4139+ | 5.17 грн |
| IDD09SG60CXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Description: DIODE SIL CARB 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| CY7C4211V-15AI |
![]() |
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 66.7MHz
Access Time: 10ns
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 66.7MHz
Access Time: 10ns
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY7C4211-15AC |
![]() |
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY7C4215V-15ASC |
![]() |
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY7C4211-15AXC |
![]() |
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Tube
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Tube
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| XC2365A72F80LAAKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16/32BIT 576KB FLASH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Description: IC MCU 16/32BIT 576KB FLASH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S25FL128SDPBHB213 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY62137EV30LL-45BVXIT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| AUIRFSL8405 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4147LQSS285XQLA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 54
Description: IC MCU 32BIT 128KB FLASH
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 54
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 552.51 грн |
| 10+ | 409.82 грн |
| 25+ | 379.28 грн |
| 100+ | 324.42 грн |
| CY62177EV30LL-55BAXIT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 32MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| S29GL256P90FFIR12 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| 2ED300C17SROHSBPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 30A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Supplier Device Package: Module
NTC Thermistor: No
Operating Temperature: -25°C ~ 85°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: Module
Packaging: Tray
Description: IGBT MODULE 1700V 30A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Supplier Device Package: Module
NTC Thermistor: No
Operating Temperature: -25°C ~ 85°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Through Hole
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.



































