Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149904) > Сторінка 703 з 2499
Фото | Назва | Виробник | Інформація |
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IPB240N04S4R9ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Qualification: AEC-Q101 |
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IPB240N04S4R9ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 943 шт: термін постачання 21-31 дні (днів) |
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IPU60R3K4CEAKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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IPU60R3K4CEAKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC858BE6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
на замовлення 543066 шт: термін постачання 21-31 дні (днів) |
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BC858BWH6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 250 mW |
на замовлення 198000 шт: термін постачання 21-31 дні (днів) |
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SAF-XC866L-4FRI BC | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 86MHz Program Memory Size: 16KB (16K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: LINbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38 Number of I/O: 19 DigiKey Programmable: Not Verified |
товару немає в наявності |
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TLE9371SJXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 5V Number of Drivers/Receivers: 1/1 Data Rate: 8Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8-80 Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9371SJXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 5V Number of Drivers/Receivers: 1/1 Data Rate: 8Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8-80 Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IRAMS06UP60A | Infineon Technologies |
![]() Packaging: Tube Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 6 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPB100N06S205ATMA4 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V |
на замовлення 23000 шт: термін постачання 21-31 дні (днів) |
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TLE62633GXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: SPI Serial Voltage - Supply: 13.5V Supplier Device Package: P-DSO-28 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE62633GXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: SPI Serial Voltage - Supply: 13.5V Supplier Device Package: P-DSO-28 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFB4229PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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EVALPMG1B1DRPTOBO1 | Infineon Technologies |
![]() Packaging: Box Function: USB Type-C Power Delivery (PD) Type: Power Management Contents: Board(s) Utilized IC / Part: PMG1-B1 Supplied Contents: Board(s) Primary Attributes: 3.3V ~ 24V Supply Embedded: Yes, MCU |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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EVAL2ED2184TOBO1 | Infineon Technologies |
![]() Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 2ED2184S06F Primary Attributes: 10V ~ 20V Supply Secondary Attributes: On-Board Test Points Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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2EDN8524RXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified |
на замовлення 66096 шт: термін постачання 21-31 дні (днів) |
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2EDN8523RXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified |
на замовлення 84019 шт: термін постачання 21-31 дні (днів) |
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S29GL256S10DHI020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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S29GL256S10DHI020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CYUSB3304-68LTXCT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C RAM Size: 16K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 3.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 68-QFN (8x8) Number of I/O: 10 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CYUSB3304-68LTXCT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C RAM Size: 16K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 3.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 68-QFN (8x8) Number of I/O: 10 DigiKey Programmable: Not Verified |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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CYUSB3312-88LTXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 88-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C RAM Size: 16K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 3.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 88-QFN (10x10) Number of I/O: 10 DigiKey Programmable: Not Verified |
на замовлення 1675 шт: термін постачання 21-31 дні (днів) |
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CYUSB3312-88LTXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 88-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 3.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 88-QFN (10x10) Number of I/O: 10 DigiKey Programmable: Not Verified |
на замовлення 1333 шт: термін постачання 21-31 дні (днів) |
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CYUSB3304-68LTXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 3.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 68-QFN (8x8) Number of I/O: 10 DigiKey Programmable: Not Verified |
на замовлення 1964 шт: термін постачання 21-31 дні (днів) |
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CYUSB3312-88LTXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 88-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 3.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 88-QFN (10x10) Number of I/O: 10 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD50N10S3L16ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPB50N10S3L16ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY8C4125LQS-S433T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 40UFQFN Packaging: Tape & Reel (TR) Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Grade: Automotive Number of I/O: 34 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE4966GE6710HTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Digital Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Bipolar Switch Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 10mT Trip, -10mT Release Current - Output (Max): 10mA Current - Supply (Max): 7mA Supplier Device Package: PG-TSOP6-6-9 Test Condition: 25°C |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IPD60R2K0C6BTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY8C4147AZA-S295T | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 54 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY22801KSXC-021 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
CY22801KSXC-027 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 200MHz Type: Clock Generator Input: CMOS, Crystal Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.14V ~ 3.47V Ratio - Input:Output: 1:3 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 |
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В кошику од. на суму грн. | |||||||||||||||||||
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CY22801KSXC-155 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY22801KSXC-011 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY22801KSXC-014 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY22801KSXC-014T | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY22801KSXC-016 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY22801SXC-038T | Infineon Technologies |
Description: INFINEON Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 200MHz Type: Clock Generator Input: CMOS, Crystal Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.14V ~ 3.47V Ratio - Input:Output: 1:3 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
IQE057N10NM6CGATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IQE057N10NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IQE057N10NM6SCATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IQE057N10NM6CGSCATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BFP405H6740XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 23dB Power - Max: 75mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Supplier Device Package: PG-SOT343-3D |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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S72XS256RE0AHBJ23 | Infineon Technologies |
Description: IC FLASH RAM 256MBIT PAR 133FBGA Packaging: Tape & Reel (TR) Package / Case: 133-VFBGA Mounting Type: Surface Mount Memory Size: 256Mbit (FLASH), 256Mbit (DDR DRAM) Memory Type: Non-Volatile, Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH, DRAM Clock Frequency: 108 MHz Memory Format: FLASH, RAM Supplier Device Package: 133-FBGA (8x8) Memory Interface: Parallel DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DD540N22KHPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 540A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1700 A Current - Reverse Leakage @ Vr: 40 mA @ 2200 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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T740N22TOFXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 745 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 2.6 kV |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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TD340N22KOFXPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 338 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 520 A Voltage - Off State: 2.2 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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TT340N22KOFXPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 338 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 520 A Voltage - Off State: 2.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S29GL512S10FHI020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSB013NE2LXIXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V |
на замовлення 18879 шт: термін постачання 21-31 дні (днів) |
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S25FL032P0XMFB000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S25FL064LABBHI033 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY7C1051H30-10BVXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Synchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Grade: Automotive Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2208 шт: термін постачання 21-31 дні (днів) |
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KX164CS16F40FBB | Infineon Technologies |
Description: LEGACY 16-BIT MCU Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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PZTA42H6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 70MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.5 W |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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PZTA92E6433HTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.5 W |
на замовлення 5843 шт: термін постачання 21-31 дні (днів) |
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FF600R12ME4EB11BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 995 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 4050 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
на замовлення 1336 шт: термін постачання 21-31 дні (днів) |
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FF600R12ME4B11BPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 4050 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
IPB240N04S4R9ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
IPB240N04S4R9ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 943 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 361.22 грн |
10+ | 230.57 грн |
100+ | 164.37 грн |
500+ | 127.76 грн |
IPU60R3K4CEAKMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2308+ | 9.53 грн |
IPU60R3K4CEAKMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
BC858BE6327HTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 543066 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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10193+ | 2.27 грн |
BC858BWH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
Description: TRANS PNP 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 198000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6512+ | 3.78 грн |
SAF-XC866L-4FRI BC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
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TLE9371SJXTMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Data Rate: 8Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Data Rate: 8Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 59.28 грн |
TLE9371SJXTMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Data Rate: 8Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Data Rate: 8Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 129.40 грн |
10+ | 112.00 грн |
25+ | 105.71 грн |
100+ | 84.53 грн |
250+ | 79.37 грн |
500+ | 69.45 грн |
1000+ | 56.60 грн |
IRAMS06UP60A |
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Виробник: Infineon Technologies
Description: IC POWER MODULE PLUG N DRIVE INT
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
Description: IC POWER MODULE PLUG N DRIVE INT
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
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IPB100N06S205ATMA4 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
139+ | 163.28 грн |
TLE62633GXUMA1 |
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Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED DSO-28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 13.5V
Supplier Device Package: P-DSO-28
Grade: Automotive
Description: IC INTERFACE SPECIALIZED DSO-28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 13.5V
Supplier Device Package: P-DSO-28
Grade: Automotive
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TLE62633GXUMA1 |
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Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED DSO-28
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 13.5V
Supplier Device Package: P-DSO-28
Grade: Automotive
Description: IC INTERFACE SPECIALIZED DSO-28
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 13.5V
Supplier Device Package: P-DSO-28
Grade: Automotive
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IRFB4229PBFXKMA1 |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 251.66 грн |
50+ | 121.91 грн |
100+ | 110.21 грн |
500+ | 84.18 грн |
1000+ | 77.99 грн |
EVALPMG1B1DRPTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR PMG1-B1
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: PMG1-B1
Supplied Contents: Board(s)
Primary Attributes: 3.3V ~ 24V Supply
Embedded: Yes, MCU
Description: EVAL BOARD FOR PMG1-B1
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: PMG1-B1
Supplied Contents: Board(s)
Primary Attributes: 3.3V ~ 24V Supply
Embedded: Yes, MCU
на замовлення 34 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 10004.63 грн |
EVAL2ED2184TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2ED2184S06F
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2184S06F
Primary Attributes: 10V ~ 20V Supply
Secondary Attributes: On-Board Test Points
Embedded: No
Description: EVAL BOARD FOR 2ED2184S06F
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2184S06F
Primary Attributes: 10V ~ 20V Supply
Secondary Attributes: On-Board Test Points
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3926.59 грн |
2EDN8524RXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
на замовлення 66096 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
598+ | 36.61 грн |
2EDN8523RXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
на замовлення 84019 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
342+ | 64.44 грн |
S29GL256S10DHI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
S29GL256S10DHI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CYUSB3304-68LTXCT |
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Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC USB 3.0 HUB 4-PORT 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
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CYUSB3304-68LTXCT |
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Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 68QFN
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC USB 3.0 HUB 4-PORT 68QFN
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 390.59 грн |
10+ | 286.84 грн |
25+ | 264.51 грн |
100+ | 225.24 грн |
250+ | 214.26 грн |
500+ | 207.65 грн |
1000+ | 198.89 грн |
CYUSB3312-88LTXC |
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Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 2-PORT 88QFN
Packaging: Tray
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC USB 3.0 HUB 2-PORT 88QFN
Packaging: Tray
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 1675 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 308.82 грн |
10+ | 226.37 грн |
25+ | 208.74 грн |
168+ | 178.57 грн |
CYUSB3312-88LTXI |
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Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 2-PORT 88QFN
Packaging: Tray
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC USB 3.0 HUB 2-PORT 88QFN
Packaging: Tray
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 1333 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 359.63 грн |
10+ | 265.58 грн |
25+ | 245.34 грн |
168+ | 212.04 грн |
CYUSB3304-68LTXI |
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Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC USB 3.0 HUB 4-PORT 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 1964 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 465.22 грн |
10+ | 344.86 грн |
25+ | 319.10 грн |
100+ | 272.84 грн |
260+ | 259.67 грн |
520+ | 252.11 грн |
1040+ | 241.85 грн |
CYUSB3312-88LTXIT |
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Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 2-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC USB 3.0 HUB 2-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
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IPD50N10S3L16ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
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IPB50N10S3L16ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
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CY8C4125LQS-S433T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Description: IC MCU 32BIT 32KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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TLE4966GE6710HTSA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH BIPOLAR TSOP6-6-9
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
Description: MAG SWITCH BIPOLAR TSOP6-6-9
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 50.81 грн |
8+ | 42.66 грн |
10+ | 40.36 грн |
25+ | 35.36 грн |
50+ | 33.69 грн |
100+ | 32.12 грн |
500+ | 28.53 грн |
1000+ | 27.39 грн |
5000+ | 25.10 грн |
IPD60R2K0C6BTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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CY8C4147AZA-S295T |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY22801KSXC-021 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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CY22801KSXC-027 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY22801KSXC-155 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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CY22801KSXC-011 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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CY22801KSXC-014 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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CY22801KSXC-014T |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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CY22801KSXC-016 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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CY22801SXC-038T |
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
Description: INFINEON
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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BFP405H6740XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 11.39 грн |
S72XS256RE0AHBJ23 |
Виробник: Infineon Technologies
Description: IC FLASH RAM 256MBIT PAR 133FBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 133-FBGA (8x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 256MBIT PAR 133FBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 133-FBGA (8x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
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DD540N22KHPSA2 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 2.2KV 540A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1700 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Description: DIODE MODULE GP 2.2KV 540A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1700 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 21963.02 грн |
T740N22TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2600V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Description: SCR MODULE 2600V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 18266.66 грн |
TD340N22KOFXPSA1 |
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Виробник: Infineon Technologies
Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 338 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 2.2 kV
Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 338 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 2.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 17536.28 грн |
TT340N22KOFXPSA1 |
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Виробник: Infineon Technologies
Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 338 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 2.2 kV
Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 338 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 2.2 kV
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S29GL512S10FHI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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BSB013NE2LXIXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
на замовлення 18879 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
258+ | 80.97 грн |
S25FL032P0XMFB000 |
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Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
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S25FL064LABBHI033 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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CY7C1051H30-10BVXI |
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Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Synchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Synchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2208 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1700.52 грн |
10+ | 1516.97 грн |
25+ | 1468.83 грн |
40+ | 1355.45 грн |
80+ | 1321.80 грн |
230+ | 1271.43 грн |
480+ | 1216.87 грн |
KX164CS16F40FBB |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 330 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 960.38 грн |
PZTA42H6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS NPN 300V 0.5A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
Description: TRANS NPN 300V 0.5A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1729+ | 12.45 грн |
PZTA92E6433HTMA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 300V 0.5A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
Description: TRANS PNP 300V 0.5A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
на замовлення 5843 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2219+ | 10.64 грн |
FF600R12ME4EB11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 995A 4050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 1200V 995A 4050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 1336 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 17755.00 грн |
FF600R12ME4B11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 4050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MODULE 1200V 4050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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од. на суму грн.