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IXFH50N60P3 IXFH50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 321 шт:
термін постачання 21-31 дні (днів)
1+928.34 грн
30+539.96 грн
120+462.42 грн
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IXFT50N60P3 IXFT50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
1+1008.93 грн
30+591.39 грн
120+508.04 грн
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IXTH30N60L2 IXTH30N60L2 IXYS DS100101IXTHTQTT30N60L2.pdf Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
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IXTT30N60L2 IXTT30N60L2 IXYS DS100101IXTHTQTT30N60L2.pdf Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
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IXFN140N20P IXFN140N20P IXYS littelfuse-discrete-mosfets-ixfn140n20p-datasheet?assetguid=7945f9e3-6e8f-4a50-a3b4-349170f8bf7b description Description: MOSFET N-CH 200V 115A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
на замовлення 748 шт:
термін постачання 21-31 дні (днів)
1+2304.58 грн
10+1635.16 грн
100+1356.48 грн
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IXFN80N50P IXFN80N50P IXYS littelfuse-discrete-mosfets-ixfn80n50p-datasheet?assetguid=852a9b82-c5b7-4e54-a79e-89d2e4f94ed9 Description: MOSFET N-CH 500V 66A SOT227B
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1+2671.88 грн
10+1915.81 грн
100+1643.79 грн
В кошику  од. на суму  грн.
IXFN230N20T IXFN230N20T IXYS DS100134BIXFN230N20T.pdf Description: MOSFET N-CH 200V 220A SOT227B
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1090W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
1+2520.00 грн
10+1804.70 грн
100+1620.17 грн
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IXFN132N50P3 IXFN132N50P3 IXYS DS100316BIXFN132N50P3.pdf Description: MOSFET N-CH 500V 112A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 2237 шт:
термін постачання 21-31 дні (днів)
1+3435.94 грн
10+2493.60 грн
100+2177.07 грн
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IXFN240N25X3 IXFN240N25X3 IXYS littelfuse-discrete-mosfets-ixfn240n25x3-datasheet?assetguid=15b34eb7-61b3-4d2f-ad08-04d6a1b95a21 Description: MOSFET N-CH 250V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 639 шт:
термін постачання 21-31 дні (днів)
1+3621.14 грн
10+2640.75 грн
100+2338.78 грн
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IXFN100N50P IXFN100N50P IXYS IXFN100N50P.pdf description Description: MOSFET N-CH 500V 90A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
1+3698.63 грн
10+2698.36 грн
100+2439.13 грн
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IXTP08N50D2 IXTP08N50D2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-08N50-Datasheet.PDF?assetguid=A427D242-A59C-4809-AE1D-1E1F10E2A329 Description: MOSFET N-CH 500V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
2+296.01 грн
50+145.27 грн
100+131.75 грн
Мінімальне замовлення: 2 шт
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IXFX98N50P3 IXFX98N50P3 IXYS DS100317BIXFKFX98N50P3.pdf Description: MOSFET N-CH 500V 98A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 618 шт:
термін постачання 21-31 дні (днів)
1+1645.13 грн
30+1006.36 грн
120+880.03 грн
510+812.14 грн
В кошику  од. на суму  грн.
IXTY08N50D2-TRL IXTY08N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-08n50-datasheet?assetguid=a427d242-a59c-4809-ae1d-1e1f10e2a329 Description: MOSFET N-CH 500V 800MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+93.62 грн
5000+88.66 грн
Мінімальне замовлення: 2500 шт
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IXTY08N50D2-TRL IXTY08N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-08n50-datasheet?assetguid=a427d242-a59c-4809-ae1d-1e1f10e2a329 Description: MOSFET N-CH 500V 800MA TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+289.82 грн
10+183.04 грн
100+128.77 грн
500+101.84 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
Q6040M4TP Q6040M4TP IXYS discrete-thyristors-qxx40xx-series-datasheet?assetguid=f23c7b53-b00d-4067-86fe-c686bd97d685 Description: 40 Amp Standard TRIAC-TO218AC
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 480A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-218
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+740.04 грн
10+493.24 грн
250+338.93 грн
В кошику  од. на суму  грн.
IXTA32P20T IXTA32P20T IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-32P20T-Datasheet.PDF?assetguid=41EE09BF-5ADB-4340-95F0-9B4C12E513EA Description: MOSFET P-CH 200V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
1+783.43 грн
50+423.07 грн
100+391.19 грн
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IXTQ22N50P IXTQ22N50P IXYS littelfuse-discrete-mosfets-ixt-22n50p-datasheet?assetguid=aa88a2b6-6037-4575-9c3c-a71212b980d4 Description: MOSFET N-CH 500V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
1+461.84 грн
30+255.05 грн
120+213.38 грн
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IXFH22N50P IXFH22N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH22N50P-Datasheet.PDF?assetguid=1DAB3767-C3C0-4B6D-BD48-CA28F3D9768D Description: MOSFET N-CH 500V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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IXFP22N65X2 IXFP22N65X2 IXYS littelfuse-discrete-mosfets-ixf-22n65x2-datasheet?assetguid=e2d277e7-bb4f-4961-8db0-9c5942153fd5 Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
на замовлення 3978 шт:
термін постачання 21-31 дні (днів)
1+502.92 грн
50+259.52 грн
100+237.89 грн
500+187.72 грн
1000+176.32 грн
2000+174.63 грн
В кошику  од. на суму  грн.
IXFA22N65X2 IXFA22N65X2 IXYS littelfuse-discrete-mosfets-ixf-22n65x2-datasheet?assetguid=e2d277e7-bb4f-4961-8db0-9c5942153fd5 Description: MOSFET N-CH 650V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
на замовлення 4207 шт:
термін постачання 21-31 дні (днів)
1+519.19 грн
50+268.92 грн
100+246.67 грн
500+194.92 грн
1000+183.19 грн
2000+182.33 грн
В кошику  од. на суму  грн.
IXFH22N65X2 IXFH22N65X2 IXYS littelfuse-discrete-mosfets-ixf-22n65x2-datasheet?assetguid=e2d277e7-bb4f-4961-8db0-9c5942153fd5 Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
на замовлення 5642 шт:
термін постачання 21-31 дні (днів)
1+609.85 грн
30+343.21 грн
120+289.53 грн
510+234.81 грн
1020+225.99 грн
В кошику  од. на суму  грн.
IXTP60N20X4 IXTP60N20X4 IXYS IXTP60N20X4_DS.pdf Description: MOSFET ULTRA X4 200V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
на замовлення 666 шт:
термін постачання 21-31 дні (днів)
1+802.03 грн
50+433.89 грн
100+401.28 грн
500+323.48 грн
В кошику  од. на суму  грн.
IXTH10P60 IXTH10P60 IXYS DS98849EIXTHT10P60.pdf Description: MOSFET P-CH 600V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
на замовлення 532 шт:
термін постачання 21-31 дні (днів)
1+951.59 грн
30+555.58 грн
120+476.55 грн
510+403.79 грн
В кошику  од. на суму  грн.
IXFT50N60P3-TRL IXYS littelfuse-discrete-mosfets-ixf-50n60p3-datasheet?assetguid=b75b348b-c7c3-401e-836a-394673db7520 Description: MOSFET N-CH 600V 50A TO268
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 5V @ 4mA
товару немає в наявності
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IXFP16N50P IXFP16N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N50P-Datasheet.PDF?assetguid=BB00D7C9-0646-4C67-89CE-480FB9520851 Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 832 шт:
термін постачання 21-31 дні (днів)
1+391.33 грн
50+198.73 грн
100+181.51 грн
500+142.05 грн
В кошику  од. на суму  грн.
IXFH15N100Q3 IXFH15N100Q3 IXYS littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
1+1438.23 грн
30+870.85 грн
120+758.48 грн
510+688.25 грн
В кошику  од. на суму  грн.
IXFH15N100P IXFH15N100P IXYS DS99891AIXFHFV15N100PIXFV15N100PS.pdf Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
на замовлення 1175 шт:
термін постачання 21-31 дні (днів)
1+993.43 грн
30+582.44 грн
120+500.49 грн
510+427.60 грн
В кошику  од. на суму  грн.
IXTP05N100 IXTP05N100 IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Description: MOSFET N-CH 1000V 750MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 593 шт:
термін постачання 21-31 дні (днів)
2+309.19 грн
50+152.84 грн
100+138.79 грн
500+107.16 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP05N100M IXTP05N100M IXYS DS100014AIXTP05N100M.pdf Description: MOSFET N-CH 1000V 700MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 1540 шт:
термін постачання 21-31 дні (днів)
1+399.08 грн
50+201.71 грн
100+184.08 грн
500+143.78 грн
1000+134.48 грн
В кошику  од. на суму  грн.
IXTA05N100-TRL IXTA05N100-TRL IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+146.78 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA05N100HV-TRL IXTA05N100HV-TRL IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Description: MOSFET N-CH 1000V 750MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFA5N100P-TRL IXFA5N100P-TRL IXYS littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811 Description: MOSFET N-CH 1000V 5A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFT15N100Q3-TRL IXYS littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a Description: MOSFET N-CH 1000V 15A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXFT50N85XHV IXFT50N85XHV IXYS DS100704DIXFTFHFK50N85XHV.pdf Description: MOSFET N-CH 850V 50A TO268
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268HV (IXFT)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
1+1314.24 грн
30+793.94 грн
120+711.31 грн
В кошику  од. на суму  грн.
IXTH30N50L2 IXTH30N50L2 IXYS media?resourcetype=datasheets&itemid=C09539A4-39F7-4FB5-940F-2103AB4FA891&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-30N50-Datasheet.PDF Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
на замовлення 564 шт:
термін постачання 21-31 дні (днів)
1+2534.72 грн
30+1610.81 грн
120+1492.33 грн
В кошику  од. на суму  грн.
IXFH60N60X3 IXFH60N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh60n60x3-datasheet?assetguid=a2abbdf6-f7aa-40dd-9e8d-cb6511c5bb95 Description: MOSFET ULTRA JCT 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товару немає в наявності
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IXTX90N25L2 IXTX90N25L2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-90N25-Datasheet.PDF?assetguid=85B50793-C43C-4B40-A84C-3DCCA3D22A7B Description: MOSFET N-CH 250V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)
1+2399.89 грн
30+1529.53 грн
120+1523.87 грн
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IXFY12N65X3 IXYS Description: DISCRETE MOSFET 12A 650V X3 TO25
Packaging: Tube
товару немає в наявності
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IXFP12N65X3 IXYS Description: DISCRETE MOSFET 12A 650V X3 TO22
Packaging: Tube
товару немає в наявності
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IXFA12N65X2-TRL IXFA12N65X2-TRL IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTH12N65X2 IXTH12N65X2 IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Description: MOSFET N-CH 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 1773 шт:
термін постачання 21-31 дні (днів)
1+455.65 грн
30+251.62 грн
120+220.75 грн
В кошику  од. на суму  грн.
IXTH40N50L2 IXTH40N50L2 IXYS littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc Description: MOSFET N-CH 500V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 514 шт:
термін постачання 21-31 дні (днів)
1+2612.21 грн
30+1664.59 грн
120+1549.65 грн
В кошику  од. на суму  грн.
IXTQ40N50L2 IXTQ40N50L2 IXYS littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
1+1586.24 грн
30+966.99 грн
120+844.50 грн
В кошику  од. на суму  грн.
IXTT40N50L2-TRL IXYS littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc Description: MOSFET N-CH 500V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTH3N150 IXTH3N150 IXYS DS100286CIXTH3N150.pdf Description: MOSFET N-CH 1500V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+1162.36 грн
30+690.94 грн
120+597.19 грн
В кошику  од. на суму  грн.
IXTA1N170DHV IXTA1N170DHV IXYS littelfuse-discrete-mosfets-ixt-1n170dhv-datasheet?assetguid=e3da0f54-331d-4535-9890-1500e65c4eb9 Description: MOSFET N-CH 1700V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
Power Dissipation (Max): 290W (Tc)
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
1+1859.00 грн
50+1094.43 грн
100+1027.77 грн
В кошику  од. на суму  грн.
IXTT2N170D2 IXTT2N170D2 IXYS littelfuse-discrete-mosfets-ixt-2n170-datasheet?assetguid=f0179f45-82ec-4e65-a036-3827fbb8db1f Description: MOSFET N-CH 1700V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
на замовлення 731 шт:
термін постачання 21-31 дні (днів)
1+2010.89 грн
30+1263.16 грн
120+1225.43 грн
В кошику  од. на суму  грн.
IXTH1N170DHV IXTH1N170DHV IXYS littelfuse-discrete-mosfets-ixt-1n170dhv-datasheet?assetguid=e3da0f54-331d-4535-9890-1500e65c4eb9 Description: MOSFET N-CH 1700V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 1516 шт:
термін постачання 21-31 дні (днів)
1+1577.71 грн
30+964.20 грн
120+842.82 грн
510+776.53 грн
В кошику  од. на суму  грн.
IXTH2N170D2 IXTH2N170D2 IXYS littelfuse-discrete-mosfets-ixt-2n170-datasheet?assetguid=f0179f45-82ec-4e65-a036-3827fbb8db1f Description: MOSFET N-CH 1700V 2A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 10 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
1+1553.69 грн
30+954.03 грн
120+884.79 грн
В кошику  од. на суму  грн.
IXFH52N30P IXFH52N30P IXYS DS99197GIXFHFV52N30PS.pdf Description: MOSFET N-CH 300V 52A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1152 шт:
термін постачання 21-31 дні (днів)
1+697.42 грн
30+396.91 грн
120+336.55 грн
510+274.36 грн
1020+269.66 грн
В кошику  од. на суму  грн.
IXTX60N50L2 IXTX60N50L2 IXYS DS100087AIXTKTX60N50L2.pdf Description: MOSFET N-CH 500V 60A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 2569 шт:
термін постачання 21-31 дні (днів)
1+2926.83 грн
30+1883.25 грн
120+1784.83 грн
В кошику  од. на суму  грн.
IXFT24N90P IXFT24N90P IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Description: MOSFET N-CH 900V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 405 шт:
термін постачання 21-31 дні (днів)
1+1431.25 грн
30+866.70 грн
120+754.76 грн
В кошику  од. на суму  грн.
IXTH1N200P3HV IXTH1N200P3HV IXYS littelfuse-discrete-mosfets-ixt-1n200p3-datasheet?assetguid=4b665d05-b45e-49d5-b5cb-2feb07396528 Description: MOSFET N-CH 2000V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+678.82 грн
30+387.23 грн
120+328.79 грн
В кошику  од. на суму  грн.
IX3407BTR IX3407BTR IXYS ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7 Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+83.50 грн
2000+75.05 грн
3000+72.32 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IX3407BTR IX3407BTR IXYS ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7 Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 3943 шт:
термін постачання 21-31 дні (днів)
2+243.32 грн
10+153.12 грн
100+106.63 грн
500+81.44 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTK120N65X2 IXTK120N65X2 IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)
1+1986.86 грн
25+1261.66 грн
100+1107.28 грн
500+1037.50 грн
В кошику  од. на суму  грн.
IXFH60N50P3 IXFH60N50P3 IXYS DS100311BIXFHFTFQ60N50P3.pdf Description: MOSFET N-CH 500V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFH56N30X3 IXFH56N30X3 IXYS littelfuse-discrete-mosfets-ixf-56n30x3-datasheet?assetguid=8c909b19-ea4e-4b75-a825-453b8d56a758 Description: MOSFET N-CH 300V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
на замовлення 4142 шт:
термін постачання 21-31 дні (днів)
1+760.18 грн
30+438.37 грн
120+373.87 грн
510+329.82 грн
В кошику  од. на суму  грн.
IXFX160N30T IXFX160N30T IXYS DS100127AIXFKFX160N30T.pdf Description: MOSFET N-CH 300V 160A PLUS247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1390W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
на замовлення 437 шт:
термін постачання 21-31 дні (днів)
1+1330.52 грн
30+805.43 грн
120+724.31 грн
В кошику  од. на суму  грн.
IXFK160N30T IXFK160N30T IXYS DS100127AIXFKFX160N30T.pdf Description: MOSFET N-CH 300V 160A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 6275 шт:
термін постачання 21-31 дні (днів)
1+1586.24 грн
25+989.59 грн
100+861.92 грн
500+782.15 грн
В кошику  од. на суму  грн.
IXFH50N60P3 IXFx50N60P3.pdf
IXFH50N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 321 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+928.34 грн
30+539.96 грн
120+462.42 грн
В кошику  од. на суму  грн.
IXFT50N60P3 IXFx50N60P3.pdf
IXFT50N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1008.93 грн
30+591.39 грн
120+508.04 грн
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IXTH30N60L2 DS100101IXTHTQTT30N60L2.pdf
IXTH30N60L2
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
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IXTT30N60L2 DS100101IXTHTQTT30N60L2.pdf
IXTT30N60L2
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
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IXFN140N20P description littelfuse-discrete-mosfets-ixfn140n20p-datasheet?assetguid=7945f9e3-6e8f-4a50-a3b4-349170f8bf7b
IXFN140N20P
Виробник: IXYS
Description: MOSFET N-CH 200V 115A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
на замовлення 748 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2304.58 грн
10+1635.16 грн
100+1356.48 грн
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IXFN80N50P littelfuse-discrete-mosfets-ixfn80n50p-datasheet?assetguid=852a9b82-c5b7-4e54-a79e-89d2e4f94ed9
IXFN80N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 66A SOT227B
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2671.88 грн
10+1915.81 грн
100+1643.79 грн
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IXFN230N20T DS100134BIXFN230N20T.pdf
IXFN230N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 220A SOT227B
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1090W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2520.00 грн
10+1804.70 грн
100+1620.17 грн
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IXFN132N50P3 DS100316BIXFN132N50P3.pdf
IXFN132N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 112A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 2237 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3435.94 грн
10+2493.60 грн
100+2177.07 грн
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IXFN240N25X3 littelfuse-discrete-mosfets-ixfn240n25x3-datasheet?assetguid=15b34eb7-61b3-4d2f-ad08-04d6a1b95a21
IXFN240N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 639 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3621.14 грн
10+2640.75 грн
100+2338.78 грн
В кошику  од. на суму  грн.
IXFN100N50P description IXFN100N50P.pdf
IXFN100N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 90A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3698.63 грн
10+2698.36 грн
100+2439.13 грн
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IXTP08N50D2 Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-08N50-Datasheet.PDF?assetguid=A427D242-A59C-4809-AE1D-1E1F10E2A329
IXTP08N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+296.01 грн
50+145.27 грн
100+131.75 грн
Мінімальне замовлення: 2 шт
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IXFX98N50P3 DS100317BIXFKFX98N50P3.pdf
IXFX98N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 98A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 618 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1645.13 грн
30+1006.36 грн
120+880.03 грн
510+812.14 грн
В кошику  од. на суму  грн.
IXTY08N50D2-TRL littelfuse-discrete-mosfets-ixt-08n50-datasheet?assetguid=a427d242-a59c-4809-ae1d-1e1f10e2a329
IXTY08N50D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 800MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+93.62 грн
5000+88.66 грн
Мінімальне замовлення: 2500 шт
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IXTY08N50D2-TRL littelfuse-discrete-mosfets-ixt-08n50-datasheet?assetguid=a427d242-a59c-4809-ae1d-1e1f10e2a329
IXTY08N50D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 800MA TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+289.82 грн
10+183.04 грн
100+128.77 грн
500+101.84 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
Q6040M4TP discrete-thyristors-qxx40xx-series-datasheet?assetguid=f23c7b53-b00d-4067-86fe-c686bd97d685
Q6040M4TP
Виробник: IXYS
Description: 40 Amp Standard TRIAC-TO218AC
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 480A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-218
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+740.04 грн
10+493.24 грн
250+338.93 грн
В кошику  од. на суму  грн.
IXTA32P20T Littelfuse-Discrete-MOSFETs-P-Channel-IXT-32P20T-Datasheet.PDF?assetguid=41EE09BF-5ADB-4340-95F0-9B4C12E513EA
IXTA32P20T
Виробник: IXYS
Description: MOSFET P-CH 200V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+783.43 грн
50+423.07 грн
100+391.19 грн
В кошику  од. на суму  грн.
IXTQ22N50P littelfuse-discrete-mosfets-ixt-22n50p-datasheet?assetguid=aa88a2b6-6037-4575-9c3c-a71212b980d4
IXTQ22N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+461.84 грн
30+255.05 грн
120+213.38 грн
В кошику  од. на суму  грн.
IXFH22N50P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH22N50P-Datasheet.PDF?assetguid=1DAB3767-C3C0-4B6D-BD48-CA28F3D9768D
IXFH22N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товару немає в наявності
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IXFP22N65X2 littelfuse-discrete-mosfets-ixf-22n65x2-datasheet?assetguid=e2d277e7-bb4f-4961-8db0-9c5942153fd5
IXFP22N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
на замовлення 3978 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+502.92 грн
50+259.52 грн
100+237.89 грн
500+187.72 грн
1000+176.32 грн
2000+174.63 грн
В кошику  од. на суму  грн.
IXFA22N65X2 littelfuse-discrete-mosfets-ixf-22n65x2-datasheet?assetguid=e2d277e7-bb4f-4961-8db0-9c5942153fd5
IXFA22N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
на замовлення 4207 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+519.19 грн
50+268.92 грн
100+246.67 грн
500+194.92 грн
1000+183.19 грн
2000+182.33 грн
В кошику  од. на суму  грн.
IXFH22N65X2 littelfuse-discrete-mosfets-ixf-22n65x2-datasheet?assetguid=e2d277e7-bb4f-4961-8db0-9c5942153fd5
IXFH22N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
на замовлення 5642 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+609.85 грн
30+343.21 грн
120+289.53 грн
510+234.81 грн
1020+225.99 грн
В кошику  од. на суму  грн.
IXTP60N20X4 IXTP60N20X4_DS.pdf
IXTP60N20X4
Виробник: IXYS
Description: MOSFET ULTRA X4 200V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
на замовлення 666 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+802.03 грн
50+433.89 грн
100+401.28 грн
500+323.48 грн
В кошику  од. на суму  грн.
IXTH10P60 DS98849EIXTHT10P60.pdf
IXTH10P60
Виробник: IXYS
Description: MOSFET P-CH 600V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
на замовлення 532 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+951.59 грн
30+555.58 грн
120+476.55 грн
510+403.79 грн
В кошику  од. на суму  грн.
IXFT50N60P3-TRL littelfuse-discrete-mosfets-ixf-50n60p3-datasheet?assetguid=b75b348b-c7c3-401e-836a-394673db7520
Виробник: IXYS
Description: MOSFET N-CH 600V 50A TO268
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 5V @ 4mA
товару немає в наявності
В кошику  од. на суму  грн.
IXFP16N50P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N50P-Datasheet.PDF?assetguid=BB00D7C9-0646-4C67-89CE-480FB9520851
IXFP16N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 832 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+391.33 грн
50+198.73 грн
100+181.51 грн
500+142.05 грн
В кошику  од. на суму  грн.
IXFH15N100Q3 littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a
IXFH15N100Q3
Виробник: IXYS
Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1438.23 грн
30+870.85 грн
120+758.48 грн
510+688.25 грн
В кошику  од. на суму  грн.
IXFH15N100P DS99891AIXFHFV15N100PIXFV15N100PS.pdf
IXFH15N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
на замовлення 1175 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+993.43 грн
30+582.44 грн
120+500.49 грн
510+427.60 грн
В кошику  од. на суму  грн.
IXTP05N100 littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTP05N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 593 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+309.19 грн
50+152.84 грн
100+138.79 грн
500+107.16 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP05N100M DS100014AIXTP05N100M.pdf
IXTP05N100M
Виробник: IXYS
Description: MOSFET N-CH 1000V 700MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 1540 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+399.08 грн
50+201.71 грн
100+184.08 грн
500+143.78 грн
1000+134.48 грн
В кошику  од. на суму  грн.
IXTA05N100-TRL littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+146.78 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA05N100HV-TRL littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100HV-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFA5N100P-TRL littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811
IXFA5N100P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 5A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFT15N100Q3-TRL littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a
Виробник: IXYS
Description: MOSFET N-CH 1000V 15A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXFT50N85XHV DS100704DIXFTFHFK50N85XHV.pdf
IXFT50N85XHV
Виробник: IXYS
Description: MOSFET N-CH 850V 50A TO268
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268HV (IXFT)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1314.24 грн
30+793.94 грн
120+711.31 грн
В кошику  од. на суму  грн.
IXTH30N50L2 media?resourcetype=datasheets&itemid=C09539A4-39F7-4FB5-940F-2103AB4FA891&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-30N50-Datasheet.PDF
IXTH30N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
на замовлення 564 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2534.72 грн
30+1610.81 грн
120+1492.33 грн
В кошику  од. на суму  грн.
IXFH60N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh60n60x3-datasheet?assetguid=a2abbdf6-f7aa-40dd-9e8d-cb6511c5bb95
IXFH60N60X3
Виробник: IXYS
Description: MOSFET ULTRA JCT 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товару немає в наявності
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IXTX90N25L2 Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-90N25-Datasheet.PDF?assetguid=85B50793-C43C-4B40-A84C-3DCCA3D22A7B
IXTX90N25L2
Виробник: IXYS
Description: MOSFET N-CH 250V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2399.89 грн
30+1529.53 грн
120+1523.87 грн
В кошику  од. на суму  грн.
IXFY12N65X3
Виробник: IXYS
Description: DISCRETE MOSFET 12A 650V X3 TO25
Packaging: Tube
товару немає в наявності
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IXFP12N65X3
Виробник: IXYS
Description: DISCRETE MOSFET 12A 650V X3 TO22
Packaging: Tube
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IXFA12N65X2-TRL littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFA12N65X2-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTH12N65X2 littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTH12N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 1773 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+455.65 грн
30+251.62 грн
120+220.75 грн
В кошику  од. на суму  грн.
IXTH40N50L2 littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc
IXTH40N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 514 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2612.21 грн
30+1664.59 грн
120+1549.65 грн
В кошику  од. на суму  грн.
IXTQ40N50L2 littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc
IXTQ40N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1586.24 грн
30+966.99 грн
120+844.50 грн
В кошику  од. на суму  грн.
IXTT40N50L2-TRL littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTH3N150 DS100286CIXTH3N150.pdf
IXTH3N150
Виробник: IXYS
Description: MOSFET N-CH 1500V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1162.36 грн
30+690.94 грн
120+597.19 грн
В кошику  од. на суму  грн.
IXTA1N170DHV littelfuse-discrete-mosfets-ixt-1n170dhv-datasheet?assetguid=e3da0f54-331d-4535-9890-1500e65c4eb9
IXTA1N170DHV
Виробник: IXYS
Description: MOSFET N-CH 1700V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
Power Dissipation (Max): 290W (Tc)
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1859.00 грн
50+1094.43 грн
100+1027.77 грн
В кошику  од. на суму  грн.
IXTT2N170D2 littelfuse-discrete-mosfets-ixt-2n170-datasheet?assetguid=f0179f45-82ec-4e65-a036-3827fbb8db1f
IXTT2N170D2
Виробник: IXYS
Description: MOSFET N-CH 1700V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
на замовлення 731 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2010.89 грн
30+1263.16 грн
120+1225.43 грн
В кошику  од. на суму  грн.
IXTH1N170DHV littelfuse-discrete-mosfets-ixt-1n170dhv-datasheet?assetguid=e3da0f54-331d-4535-9890-1500e65c4eb9
IXTH1N170DHV
Виробник: IXYS
Description: MOSFET N-CH 1700V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 1516 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1577.71 грн
30+964.20 грн
120+842.82 грн
510+776.53 грн
В кошику  од. на суму  грн.
IXTH2N170D2 littelfuse-discrete-mosfets-ixt-2n170-datasheet?assetguid=f0179f45-82ec-4e65-a036-3827fbb8db1f
IXTH2N170D2
Виробник: IXYS
Description: MOSFET N-CH 1700V 2A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 10 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1553.69 грн
30+954.03 грн
120+884.79 грн
В кошику  од. на суму  грн.
IXFH52N30P DS99197GIXFHFV52N30PS.pdf
IXFH52N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 52A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1152 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+697.42 грн
30+396.91 грн
120+336.55 грн
510+274.36 грн
1020+269.66 грн
В кошику  од. на суму  грн.
IXTX60N50L2 DS100087AIXTKTX60N50L2.pdf
IXTX60N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 60A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 2569 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2926.83 грн
30+1883.25 грн
120+1784.83 грн
В кошику  од. на суму  грн.
IXFT24N90P littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
IXFT24N90P
Виробник: IXYS
Description: MOSFET N-CH 900V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 405 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1431.25 грн
30+866.70 грн
120+754.76 грн
В кошику  од. на суму  грн.
IXTH1N200P3HV littelfuse-discrete-mosfets-ixt-1n200p3-datasheet?assetguid=4b665d05-b45e-49d5-b5cb-2feb07396528
IXTH1N200P3HV
Виробник: IXYS
Description: MOSFET N-CH 2000V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+678.82 грн
30+387.23 грн
120+328.79 грн
В кошику  од. на суму  грн.
IX3407BTR ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7
IX3407BTR
Виробник: IXYS
Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+83.50 грн
2000+75.05 грн
3000+72.32 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IX3407BTR ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7
IX3407BTR
Виробник: IXYS
Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 3943 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+243.32 грн
10+153.12 грн
100+106.63 грн
500+81.44 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTK120N65X2 littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTK120N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1986.86 грн
25+1261.66 грн
100+1107.28 грн
500+1037.50 грн
В кошику  од. на суму  грн.
IXFH60N50P3 DS100311BIXFHFTFQ60N50P3.pdf
IXFH60N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFH56N30X3 littelfuse-discrete-mosfets-ixf-56n30x3-datasheet?assetguid=8c909b19-ea4e-4b75-a825-453b8d56a758
IXFH56N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
на замовлення 4142 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+760.18 грн
30+438.37 грн
120+373.87 грн
510+329.82 грн
В кошику  од. на суму  грн.
IXFX160N30T DS100127AIXFKFX160N30T.pdf
IXFX160N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 160A PLUS247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1390W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
на замовлення 437 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1330.52 грн
30+805.43 грн
120+724.31 грн
В кошику  од. на суму  грн.
IXFK160N30T DS100127AIXFKFX160N30T.pdf
IXFK160N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 160A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 6275 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1586.24 грн
25+989.59 грн
100+861.92 грн
500+782.15 грн
В кошику  од. на суму  грн.
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