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IXTP05N100M IXTP05N100M IXYS DS100014AIXTP05N100M.pdf Description: MOSFET N-CH 1000V 700MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
1+407.45 грн
50+205.95 грн
100+187.94 грн
500+146.79 грн
1000+137.30 грн
В кошику  од. на суму  грн.
IXTA05N100-TRL IXTA05N100-TRL IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+149.86 грн
Мінімальне замовлення: 800
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IXTA05N100HV-TRL IXTA05N100HV-TRL IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Description: MOSFET N-CH 1000V 750MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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IXFA5N100P-TRL IXFA5N100P-TRL IXYS littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811 Description: MOSFET N-CH 1000V 5A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFT15N100Q3-TRL IXYS littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a Description: MOSFET N-CH 1000V 15A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
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IXFT50N85XHV IXFT50N85XHV IXYS DS100704DIXFTFHFK50N85XHV.pdf Description: MOSFET N-CH 850V 50A TO268
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268HV (IXFT)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
1+1341.81 грн
30+810.59 грн
120+726.23 грн
В кошику  од. на суму  грн.
IXTH30N50L2 IXTH30N50L2 IXYS media?resourcetype=datasheets&itemid=C09539A4-39F7-4FB5-940F-2103AB4FA891&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-30N50-Datasheet.PDF Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
на замовлення 810 шт:
термін постачання 21-31 дні (днів)
1+2113.99 грн
30+1329.90 грн
120+1294.38 грн
В кошику  од. на суму  грн.
IXFH60N60X3 IXFH60N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh60n60x3-datasheet?assetguid=a2abbdf6-f7aa-40dd-9e8d-cb6511c5bb95 Description: MOSFET ULTRA JCT 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
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IXTX90N25L2 IXTX90N25L2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-90N25-Datasheet.PDF?assetguid=85B50793-C43C-4B40-A84C-3DCCA3D22A7B Description: MOSFET N-CH 250V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)
1+2450.23 грн
30+1561.61 грн
120+1555.84 грн
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IXFY12N65X3 IXYS Description: DISCRETE MOSFET 12A 650V X3 TO25
Packaging: Tube
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IXFP12N65X3 IXYS Description: DISCRETE MOSFET 12A 650V X3 TO22
Packaging: Tube
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IXFA12N65X2-TRL IXFA12N65X2-TRL IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
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IXTH12N65X2 IXTH12N65X2 IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Description: MOSFET N-CH 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 1773 шт:
термін постачання 21-31 дні (днів)
1+465.20 грн
30+256.90 грн
120+225.38 грн
В кошику  од. на суму  грн.
IXTH40N50L2 IXTH40N50L2 IXYS littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc Description: MOSFET N-CH 500V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
1+2606.88 грн
30+1661.11 грн
120+1546.42 грн
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IXTQ40N50L2 IXTQ40N50L2 IXYS littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
1+1570.46 грн
30+957.30 грн
120+836.05 грн
510+767.34 грн
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IXTT40N50L2-TRL IXYS littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc Description: MOSFET N-CH 500V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
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IXTH3N150 IXTH3N150 IXYS DS100286CIXTH3N150.pdf Description: MOSFET N-CH 1500V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+1186.74 грн
30+705.43 грн
120+609.72 грн
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IXTA1N170DHV IXTA1N170DHV IXYS littelfuse-discrete-mosfets-ixt-1n170dhv-datasheet?assetguid=e3da0f54-331d-4535-9890-1500e65c4eb9 Description: MOSFET N-CH 1700V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
Power Dissipation (Max): 290W (Tc)
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
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IXTT2N170D2 IXTT2N170D2 IXYS littelfuse-discrete-mosfets-ixt-2n170-datasheet?assetguid=f0179f45-82ec-4e65-a036-3827fbb8db1f Description: MOSFET N-CH 1700V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
на замовлення 731 шт:
термін постачання 21-31 дні (днів)
1+2053.07 грн
30+1289.65 грн
120+1251.13 грн
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IXTH1N170DHV IXTH1N170DHV IXYS littelfuse-discrete-mosfets-ixt-1n170dhv-datasheet?assetguid=e3da0f54-331d-4535-9890-1500e65c4eb9 Description: MOSFET N-CH 1700V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 1516 шт:
термін постачання 21-31 дні (днів)
1+1610.81 грн
30+984.43 грн
120+860.50 грн
510+792.82 грн
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IXTH2N170D2 IXTH2N170D2 IXYS littelfuse-discrete-mosfets-ixt-2n170-datasheet?assetguid=f0179f45-82ec-4e65-a036-3827fbb8db1f Description: MOSFET N-CH 1700V 2A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 10 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
1+1586.28 грн
30+974.04 грн
120+903.35 грн
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IXFH52N30P IXFH52N30P IXYS DS99197GIXFHFV52N30PS.pdf Description: MOSFET N-CH 300V 52A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
1+598.91 грн
30+337.99 грн
120+285.44 грн
510+239.71 грн
В кошику  од. на суму  грн.
IXTX60N50L2 IXTX60N50L2 IXYS DS100087AIXTKTX60N50L2.pdf Description: MOSFET N-CH 500V 60A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 1879 шт:
термін постачання 21-31 дні (днів)
1+2920.97 грн
30+1879.33 грн
120+1781.10 грн
В кошику  од. на суму  грн.
IXFT24N90P IXFT24N90P IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Description: MOSFET N-CH 900V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 405 шт:
термін постачання 21-31 дні (днів)
1+1230.26 грн
30+737.73 грн
120+650.41 грн
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IXTH1N200P3HV IXTH1N200P3HV IXYS littelfuse-discrete-mosfets-ixt-1n200p3-datasheet?assetguid=4b665d05-b45e-49d5-b5cb-2feb07396528 Description: MOSFET N-CH 2000V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+693.06 грн
30+395.35 грн
120+335.69 грн
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IX3407BTR IX3407BTR IXYS ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7 Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+84.57 грн
2000+76.01 грн
3000+73.25 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IX3407BTR IX3407BTR IXYS ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7 Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 4043 шт:
термін постачання 21-31 дні (днів)
2+246.84 грн
10+155.11 грн
100+108.00 грн
500+82.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTK120N65X2 IXTK120N65X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 1365 шт:
термін постачання 21-31 дні (днів)
1+1801.48 грн
25+1133.59 грн
100+991.04 грн
500+913.79 грн
В кошику  од. на суму  грн.
IXFH60N50P3 IXFH60N50P3 IXYS DS100311BIXFHFTFQ60N50P3.pdf Description: MOSFET N-CH 500V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
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IXFH56N30X3 IXFH56N30X3 IXYS littelfuse-discrete-mosfets-ixf-56n30x3-datasheet?assetguid=8c909b19-ea4e-4b75-a825-453b8d56a758 Description: MOSFET N-CH 300V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
на замовлення 4142 шт:
термін постачання 21-31 дні (днів)
1+776.13 грн
30+447.57 грн
120+381.71 грн
510+336.74 грн
В кошику  од. на суму  грн.
IXFX160N30T IXFX160N30T IXYS DS100127AIXFKFX160N30T.pdf Description: MOSFET N-CH 300V 160A PLUS247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1390W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
на замовлення 437 шт:
термін постачання 21-31 дні (днів)
1+1358.43 грн
30+822.33 грн
120+739.51 грн
В кошику  од. на суму  грн.
IXFK160N30T IXFK160N30T IXYS DS100127AIXFKFX160N30T.pdf Description: MOSFET N-CH 300V 160A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 6275 шт:
термін постачання 21-31 дні (днів)
1+1619.51 грн
25+1010.35 грн
100+880.00 грн
500+798.55 грн
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IXFK48N50 IXFK48N50 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4 Description: MOSFET N-CH 500V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
на замовлення 1351 шт:
термін постачання 21-31 дні (днів)
1+2188.36 грн
25+1399.51 грн
100+1244.51 грн
В кошику  од. на суму  грн.
IXFT24N90P-TRL IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Description: MOSFET N-CH 900V 24A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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IXTP15N50L2 IXTP15N50L2 IXYS littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1 Description: MOSFET N-CH 500V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
на замовлення 1430 шт:
термін постачання 21-31 дні (днів)
1+785.62 грн
50+423.05 грн
100+390.93 грн
500+314.16 грн
1000+312.64 грн
В кошику  од. на суму  грн.
IXTA15N50L2-TRL IXTA15N50L2-TRL IXYS littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1 Description: MOSFET N-CH 500V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+542.36 грн
Мінімальне замовлення: 800
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IXTY48P05T IXTY48P05T IXYS littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84 Description: MOSFET P-CH 50V 48A TO252
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+343.36 грн
70+164.24 грн
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IXTA24P085T IXTA24P085T IXYS littelfuse-discrete-mosfets-ixt-24p085t-datasheet?assetguid=80866686-ffb0-4146-82b9-23bb12b38a98 Description: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
2+276.91 грн
50+135.32 грн
100+122.56 грн
500+94.05 грн
1000+87.32 грн
2000+81.66 грн
Мінімальне замовлення: 2
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IXFK44N80P IXFK44N80P IXYS littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce Description: MOSFET N-CH 800V 44A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
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IXFH24N80P IXFH24N80P IXYS IXFH24N80P.pdf Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 306 шт:
термін постачання 21-31 дні (днів)
1+873.44 грн
30+509.08 грн
120+436.34 грн
В кошику  од. на суму  грн.
IXFR44N80P IXFR44N80P IXYS DS99504EIXFR44N80P.pdf Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
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IXFX44N80P IXFX44N80P IXYS littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce Description: MOSFET N-CH 800V 44A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
1+1624.26 грн
30+991.92 грн
120+866.91 грн
510+798.19 грн
В кошику  од. на суму  грн.
IXTX110N20L2 IXTX110N20L2 IXYS DS100195IXTKTX110N20L2.pdf Description: MOSFET N-CH 200V 110A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 1289 шт:
термін постачання 21-31 дні (днів)
1+2897.24 грн
30+1864.40 грн
120+1766.96 грн
В кошику  од. на суму  грн.
IXTK110N20L2 IXTK110N20L2 IXYS DS100195IXTKTX110N20L2.pdf Description: MOSFET N-CH 200V 110A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTK90N25L2 IXTK90N25L2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-90N25-Datasheet.PDF?assetguid=85B50793-C43C-4B40-A84C-3DCCA3D22A7B Description: MOSFET N-CH 250V 90A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 353 шт:
термін постачання 21-31 дні (днів)
1+2784.10 грн
25+1816.21 грн
100+1681.26 грн
В кошику  од. на суму  грн.
IXFK320N17T2 IXFK320N17T2 IXYS DS100188IXFKFX320N17T2.pdf Description: MOSFET N-CH 170V 320A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
1+2504.03 грн
25+1619.26 грн
100+1473.17 грн
В кошику  од. на суму  грн.
IXFH44N50P IXFH44N50P IXYS DS99366FIXFHFTFK44N50P.pdf description Description: MOSFET N-CH 500V 44A TO247AD
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 658W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+913.00 грн
30+533.25 грн
120+457.45 грн
В кошику  од. на суму  грн.
IXTY02N120P-TRL IXTY02N120P-TRL IXYS littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0 Description: MOSFET N-CH 1200V 200MA TO252
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IXTA36P15P-TRL IXTA36P15P-TRL IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
800+233.53 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA36P15P-TRL IXTA36P15P-TRL IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
на замовлення 6086 шт:
термін постачання 21-31 дні (днів)
1+544.32 грн
10+356.47 грн
100+275.26 грн
В кошику  од. на суму  грн.
IXTA52P10P-TRL IXTA52P10P-TRL IXYS littelfuse-discrete-mosfets-ixt-52p10p-datasheet?assetguid=b047fbe5-952b-40c8-bfa0-176e9733db4b Description: MOSFET P-CH 100V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+231.03 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA52P10P-TRL IXTA52P10P-TRL IXYS littelfuse-discrete-mosfets-ixt-52p10p-datasheet?assetguid=b047fbe5-952b-40c8-bfa0-176e9733db4b Description: MOSFET P-CH 100V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 1279 шт:
термін постачання 21-31 дні (днів)
1+538.78 грн
10+352.67 грн
100+272.30 грн
В кошику  од. на суму  грн.
IXTA26P20P-TRL IXTA26P20P-TRL IXYS littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a Description: MOSFET P-CH 200V 26A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+233.26 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA26P20P-TRL IXTA26P20P-TRL IXYS littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a Description: MOSFET P-CH 200V 26A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 2151 шт:
термін постачання 21-31 дні (днів)
1+544.32 грн
10+356.09 грн
100+274.94 грн
В кошику  од. на суму  грн.
IXTA06N120P-TRL IXTA06N120P-TRL IXYS littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7 Description: MOSFET N-CH 1200V 600MA TO263
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+141.85 грн
1600+136.23 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA06N120P-TRL IXTA06N120P-TRL IXYS littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7 Description: MOSFET N-CH 1200V 600MA TO263
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 6703 шт:
термін постачання 21-31 дні (днів)
1+370.26 грн
10+240.06 грн
100+172.07 грн
В кошику  од. на суму  грн.
IXTA180N10T-TRL IXTA180N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+194.36 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA180N10T-TRL IXTA180N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b Description: MOSFET N-CH 100V 180A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 1203 шт:
термін постачання 21-31 дні (днів)
1+494.48 грн
10+320.82 грн
100+232.98 грн
В кошику  од. на суму  грн.
IXTK22N100L IXTK22N100L IXYS DS99293DIXTKTX22N100L.pdf Description: MOSFET N-CH 1000V 22A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFX20N120P IXFX20N120P IXYS littelfuse-discrete-mosfets-ixf-20n120p-datasheet?assetguid=e6809744-4588-43ea-a419-5e983248ea7f Description: MOSFET N-CH 1200V 20A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1882.97 грн
30+1172.02 грн
120+1116.89 грн
В кошику  од. на суму  грн.
IXTP05N100M DS100014AIXTP05N100M.pdf
IXTP05N100M
Виробник: IXYS
Description: MOSFET N-CH 1000V 700MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+407.45 грн
50+205.95 грн
100+187.94 грн
500+146.79 грн
1000+137.30 грн
В кошику  од. на суму  грн.
IXTA05N100-TRL littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+149.86 грн
Мінімальне замовлення: 800
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IXTA05N100HV-TRL littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100HV-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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IXFA5N100P-TRL littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811
IXFA5N100P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 5A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFT15N100Q3-TRL littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a
Виробник: IXYS
Description: MOSFET N-CH 1000V 15A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
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IXFT50N85XHV DS100704DIXFTFHFK50N85XHV.pdf
IXFT50N85XHV
Виробник: IXYS
Description: MOSFET N-CH 850V 50A TO268
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268HV (IXFT)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1341.81 грн
30+810.59 грн
120+726.23 грн
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IXTH30N50L2 media?resourcetype=datasheets&itemid=C09539A4-39F7-4FB5-940F-2103AB4FA891&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-30N50-Datasheet.PDF
IXTH30N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
на замовлення 810 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2113.99 грн
30+1329.90 грн
120+1294.38 грн
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IXFH60N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh60n60x3-datasheet?assetguid=a2abbdf6-f7aa-40dd-9e8d-cb6511c5bb95
IXFH60N60X3
Виробник: IXYS
Description: MOSFET ULTRA JCT 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
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IXTX90N25L2 Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-90N25-Datasheet.PDF?assetguid=85B50793-C43C-4B40-A84C-3DCCA3D22A7B
IXTX90N25L2
Виробник: IXYS
Description: MOSFET N-CH 250V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2450.23 грн
30+1561.61 грн
120+1555.84 грн
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IXFY12N65X3
Виробник: IXYS
Description: DISCRETE MOSFET 12A 650V X3 TO25
Packaging: Tube
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IXFP12N65X3
Виробник: IXYS
Description: DISCRETE MOSFET 12A 650V X3 TO22
Packaging: Tube
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IXFA12N65X2-TRL littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFA12N65X2-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
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IXTH12N65X2 littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTH12N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 1773 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+465.20 грн
30+256.90 грн
120+225.38 грн
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IXTH40N50L2 littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc
IXTH40N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2606.88 грн
30+1661.11 грн
120+1546.42 грн
В кошику  од. на суму  грн.
IXTQ40N50L2 littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc
IXTQ40N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1570.46 грн
30+957.30 грн
120+836.05 грн
510+767.34 грн
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IXTT40N50L2-TRL littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
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IXTH3N150 DS100286CIXTH3N150.pdf
IXTH3N150
Виробник: IXYS
Description: MOSFET N-CH 1500V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1186.74 грн
30+705.43 грн
120+609.72 грн
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IXTA1N170DHV littelfuse-discrete-mosfets-ixt-1n170dhv-datasheet?assetguid=e3da0f54-331d-4535-9890-1500e65c4eb9
IXTA1N170DHV
Виробник: IXYS
Description: MOSFET N-CH 1700V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
Power Dissipation (Max): 290W (Tc)
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
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IXTT2N170D2 littelfuse-discrete-mosfets-ixt-2n170-datasheet?assetguid=f0179f45-82ec-4e65-a036-3827fbb8db1f
IXTT2N170D2
Виробник: IXYS
Description: MOSFET N-CH 1700V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
на замовлення 731 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2053.07 грн
30+1289.65 грн
120+1251.13 грн
В кошику  од. на суму  грн.
IXTH1N170DHV littelfuse-discrete-mosfets-ixt-1n170dhv-datasheet?assetguid=e3da0f54-331d-4535-9890-1500e65c4eb9
IXTH1N170DHV
Виробник: IXYS
Description: MOSFET N-CH 1700V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 1516 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1610.81 грн
30+984.43 грн
120+860.50 грн
510+792.82 грн
В кошику  од. на суму  грн.
IXTH2N170D2 littelfuse-discrete-mosfets-ixt-2n170-datasheet?assetguid=f0179f45-82ec-4e65-a036-3827fbb8db1f
IXTH2N170D2
Виробник: IXYS
Description: MOSFET N-CH 1700V 2A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 10 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1586.28 грн
30+974.04 грн
120+903.35 грн
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IXFH52N30P DS99197GIXFHFV52N30PS.pdf
IXFH52N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 52A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+598.91 грн
30+337.99 грн
120+285.44 грн
510+239.71 грн
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IXTX60N50L2 DS100087AIXTKTX60N50L2.pdf
IXTX60N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 60A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 1879 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2920.97 грн
30+1879.33 грн
120+1781.10 грн
В кошику  од. на суму  грн.
IXFT24N90P littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
IXFT24N90P
Виробник: IXYS
Description: MOSFET N-CH 900V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 405 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1230.26 грн
30+737.73 грн
120+650.41 грн
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IXTH1N200P3HV littelfuse-discrete-mosfets-ixt-1n200p3-datasheet?assetguid=4b665d05-b45e-49d5-b5cb-2feb07396528
IXTH1N200P3HV
Виробник: IXYS
Description: MOSFET N-CH 2000V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+693.06 грн
30+395.35 грн
120+335.69 грн
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IX3407BTR ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7
IX3407BTR
Виробник: IXYS
Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+84.57 грн
2000+76.01 грн
3000+73.25 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IX3407BTR ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7
IX3407BTR
Виробник: IXYS
Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 4043 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+246.84 грн
10+155.11 грн
100+108.00 грн
500+82.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTK120N65X2 ixty2n65x2.pdf
IXTK120N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 1365 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1801.48 грн
25+1133.59 грн
100+991.04 грн
500+913.79 грн
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IXFH60N50P3 DS100311BIXFHFTFQ60N50P3.pdf
IXFH60N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
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IXFH56N30X3 littelfuse-discrete-mosfets-ixf-56n30x3-datasheet?assetguid=8c909b19-ea4e-4b75-a825-453b8d56a758
IXFH56N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
на замовлення 4142 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+776.13 грн
30+447.57 грн
120+381.71 грн
510+336.74 грн
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IXFX160N30T DS100127AIXFKFX160N30T.pdf
IXFX160N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 160A PLUS247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1390W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
на замовлення 437 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1358.43 грн
30+822.33 грн
120+739.51 грн
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IXFK160N30T DS100127AIXFKFX160N30T.pdf
IXFK160N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 160A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 6275 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1619.51 грн
25+1010.35 грн
100+880.00 грн
500+798.55 грн
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IXFK48N50 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4
IXFK48N50
Виробник: IXYS
Description: MOSFET N-CH 500V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
на замовлення 1351 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2188.36 грн
25+1399.51 грн
100+1244.51 грн
В кошику  од. на суму  грн.
IXFT24N90P-TRL littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
Виробник: IXYS
Description: MOSFET N-CH 900V 24A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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IXTP15N50L2 littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1
IXTP15N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
на замовлення 1430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+785.62 грн
50+423.05 грн
100+390.93 грн
500+314.16 грн
1000+312.64 грн
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IXTA15N50L2-TRL littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1
IXTA15N50L2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+542.36 грн
Мінімальне замовлення: 800
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IXTY48P05T littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84
IXTY48P05T
Виробник: IXYS
Description: MOSFET P-CH 50V 48A TO252
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+343.36 грн
70+164.24 грн
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IXTA24P085T littelfuse-discrete-mosfets-ixt-24p085t-datasheet?assetguid=80866686-ffb0-4146-82b9-23bb12b38a98
IXTA24P085T
Виробник: IXYS
Description: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+276.91 грн
50+135.32 грн
100+122.56 грн
500+94.05 грн
1000+87.32 грн
2000+81.66 грн
Мінімальне замовлення: 2
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IXFK44N80P littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce
IXFK44N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 44A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
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IXFH24N80P IXFH24N80P.pdf
IXFH24N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 306 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+873.44 грн
30+509.08 грн
120+436.34 грн
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IXFR44N80P DS99504EIXFR44N80P.pdf
IXFR44N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
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IXFX44N80P littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce
IXFX44N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 44A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1624.26 грн
30+991.92 грн
120+866.91 грн
510+798.19 грн
В кошику  од. на суму  грн.
IXTX110N20L2 DS100195IXTKTX110N20L2.pdf
IXTX110N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 110A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 1289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2897.24 грн
30+1864.40 грн
120+1766.96 грн
В кошику  од. на суму  грн.
IXTK110N20L2 DS100195IXTKTX110N20L2.pdf
IXTK110N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 110A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTK90N25L2 Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-90N25-Datasheet.PDF?assetguid=85B50793-C43C-4B40-A84C-3DCCA3D22A7B
IXTK90N25L2
Виробник: IXYS
Description: MOSFET N-CH 250V 90A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 353 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2784.10 грн
25+1816.21 грн
100+1681.26 грн
В кошику  од. на суму  грн.
IXFK320N17T2 DS100188IXFKFX320N17T2.pdf
IXFK320N17T2
Виробник: IXYS
Description: MOSFET N-CH 170V 320A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2504.03 грн
25+1619.26 грн
100+1473.17 грн
В кошику  од. на суму  грн.
IXFH44N50P description DS99366FIXFHFTFK44N50P.pdf
IXFH44N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 44A TO247AD
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 658W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+913.00 грн
30+533.25 грн
120+457.45 грн
В кошику  од. на суму  грн.
IXTY02N120P-TRL littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0
IXTY02N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 200MA TO252
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
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IXTA36P15P-TRL littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
IXTA36P15P-TRL
Виробник: IXYS
Description: MOSFET P-CH 150V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+233.53 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA36P15P-TRL littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
IXTA36P15P-TRL
Виробник: IXYS
Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
на замовлення 6086 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+544.32 грн
10+356.47 грн
100+275.26 грн
В кошику  од. на суму  грн.
IXTA52P10P-TRL littelfuse-discrete-mosfets-ixt-52p10p-datasheet?assetguid=b047fbe5-952b-40c8-bfa0-176e9733db4b
IXTA52P10P-TRL
Виробник: IXYS
Description: MOSFET P-CH 100V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+231.03 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA52P10P-TRL littelfuse-discrete-mosfets-ixt-52p10p-datasheet?assetguid=b047fbe5-952b-40c8-bfa0-176e9733db4b
IXTA52P10P-TRL
Виробник: IXYS
Description: MOSFET P-CH 100V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 1279 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+538.78 грн
10+352.67 грн
100+272.30 грн
В кошику  од. на суму  грн.
IXTA26P20P-TRL littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a
IXTA26P20P-TRL
Виробник: IXYS
Description: MOSFET P-CH 200V 26A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+233.26 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA26P20P-TRL littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a
IXTA26P20P-TRL
Виробник: IXYS
Description: MOSFET P-CH 200V 26A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 2151 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+544.32 грн
10+356.09 грн
100+274.94 грн
В кошику  од. на суму  грн.
IXTA06N120P-TRL littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7
IXTA06N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+141.85 грн
1600+136.23 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA06N120P-TRL littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7
IXTA06N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 6703 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+370.26 грн
10+240.06 грн
100+172.07 грн
В кошику  од. на суму  грн.
IXTA180N10T-TRL littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b
IXTA180N10T-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+194.36 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXTA180N10T-TRL littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b
IXTA180N10T-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 1203 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+494.48 грн
10+320.82 грн
100+232.98 грн
В кошику  од. на суму  грн.
IXTK22N100L DS99293DIXTKTX22N100L.pdf
IXTK22N100L
Виробник: IXYS
Description: MOSFET N-CH 1000V 22A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFX20N120P littelfuse-discrete-mosfets-ixf-20n120p-datasheet?assetguid=e6809744-4588-43ea-a419-5e983248ea7f
IXFX20N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 20A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1882.97 грн
30+1172.02 грн
120+1116.89 грн
В кошику  од. на суму  грн.
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