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IXTY48P05T IXTY48P05T IXYS IXT_48P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
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IXTA48P05T IXTA48P05T IXYS IXT_48P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
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IXTA48P05T-TRL IXYS littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
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IXTY48P05T-TRL IXYS littelfusediscretemosfetspchannelixt48p05td.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
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DSA120X200LB-TUB DSA120X200LB-TUB IXYS DSA120X200LB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Semiconductor structure: double independent
Case: SMPD
Mounting: SMD
Type of diode: Schottky rectifying
Power dissipation: 185W
Max. forward voltage: 0.67V
Max. off-state voltage: 200V
Load current: 65A x2
Max. forward impulse current: 700A
Kind of package: tube
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1463.91 грн
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DSEI30-10AR DSEI30-10AR IXYS 93021.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 200A; ISOPLUS247™; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
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NCD2400MTR IXYS NCD2400M.pdf Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
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IXFN360N15T2 IXFN360N15T2 IXYS IXFN360N15T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Power dissipation: 1.07kW
Gate-source voltage: ±30V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXBF20N360 IXBF20N360 IXYS IXBF20N360.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Mounting: THT
Gate charge: 110nC
Power dissipation: 230W
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
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IXBX50N360HV IXBX50N360HV IXYS IXBX50N360HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Mounting: THT
Gate charge: 0.21µC
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
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CPC3720CTR CPC3720CTR IXYS CPC3720.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
на замовлення 376 шт:
термін постачання 14-30 дні (днів)
11+44.39 грн
19+23.22 грн
25+21.20 грн
100+18.67 грн
250+17.16 грн
Мінімальне замовлення: 11
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MCC95-16io1B MCC95-16io1B IXYS MCC95-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
1+2724.89 грн
5+2521.01 грн
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MDD95-16N1B MDD95-16N1B IXYS MDD95-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 1.6kV
Load current: 120A
Max. load current: 180A
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
1+2473.06 грн
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MDD95-12N1B MDD95-12N1B IXYS MDD95-12N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 1.2kV
Load current: 120A
Max. load current: 180A
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
1+2314.53 грн
5+2023.03 грн
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MDD95-22N1B MDD95-22N1B IXYS MDD95-22N1B-dte.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 2.2kV
Load current: 120A
Max. load current: 180A
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
1+2944.12 грн
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MCD95-16io8B MCD95-16io8B IXYS MCD95-16IO8B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward impulse current: 2.25kA
Max. forward voltage: 1.28V
Max. off-state voltage: 1.6kV
Load current: 116A
Max. load current: 180A
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
1+2595.35 грн
10+2296.41 грн
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IX2127N IX2127N IXYS IX2127.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
на замовлення 811 шт:
термін постачання 14-30 дні (днів)
9+55.26 грн
Мінімальне замовлення: 9
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LF2181NTR LF2181NTR IXYS LF2181NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Kind of integrated circuit: gate driver; high-/low-side
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DH20-18A DH20-18A IXYS DH20-18A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 300ns
Max. forward voltage: 2.35V
Power dissipation: 140W
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
2+422.14 грн
10+259.92 грн
Мінімальне замовлення: 2
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IXDH20N120 IXDH20N120 IXYS IXDH20N120_IXDH20N120D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 70nC
Turn-on time: 175ns
Turn-off time: 570ns
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Power dissipation: 200W
Collector-emitter voltage: 1.2kV
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
1+510.01 грн
3+426.48 грн
10+376.85 грн
30+338.15 грн
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CPC1966Y CPC1966Y IXYS CPC1966.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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CPC1966YX6 CPC1966YX6 IXYS CPC1966YX6.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Operating temperature: -40...85°C
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IXKR25N80C IXKR25N80C IXYS IXKR25N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
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IXKC25N80C IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixkc25n80c_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 550ns
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DSEP2X61-06A DSEP2X61-06A IXYS DSEP2x61-06A.pdf description Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.01V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
1+1968.48 грн
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IXFH170N25X3 IXFH170N25X3 IXYS IXFH(K,T)170N25X3_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
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IXFH170N10P IXFH170N10P IXYS IXFH170N10P_IXFK170N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Gate-source voltage: ±20V
Technology: HiPerFET™; Polar™
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IXFH170N15X3 IXYS media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Gate-source voltage: ±20V
Technology: HiPerFET™; X3-Class
Pulsed drain current: 340A
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IXTA230N04T4 IXTA230N04T4 IXYS IXTA(P)230N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXTP230N04T4 IXTP230N04T4 IXYS IXTA(P)230N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXTP230N04T4M IXTP230N04T4M IXYS IXTP230N04T4M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXFQ60N25X3 IXFQ60N25X3 IXYS IXFA(P,Q)60N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO3P; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO3P
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
1+683.04 грн
10+524.05 грн
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IXFA60N25X3 IXFA60N25X3 IXYS IXFA(P,Q)60N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO263
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
1+518.16 грн
10+364.23 грн
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IXFH60N50P3 IXFH60N50P3 IXYS IXF_60N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
на замовлення 327 шт:
термін постачання 14-30 дні (днів)
1+728.33 грн
5+575.36 грн
10+513.96 грн
30+491.25 грн
В кошику  од. на суму  грн.
CPC1906Y CPC1906Y IXYS CPC1906.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MIXA10WB1200TED IXYS MIXA10WB1200TED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Semiconductor structure: diode/transistor
Case: E2-Pack
Application: motors; photovoltaics
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
1+5853.81 грн
3+4807.32 грн
6+4315.24 грн
В кошику  од. на суму  грн.
CLB30I1200HB CLB30I1200HB IXYS CLB30I1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
2+303.47 грн
3+248.99 грн
10+223.75 грн
30+215.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLB30I1200PZ-TUB CLB30I1200PZ-TUB IXYS CLB30I1200PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
2+237.34 грн
3+197.68 грн
10+174.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLB30I1200PZ-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: D2PAK
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LBA110 LBA110 IXYS littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 340 шт:
термін постачання 14-30 дні (днів)
2+318.87 грн
10+254.04 грн
50+245.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LBA110S LBA110S IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
1+528.13 грн
50+449.19 грн
100+384.42 грн
В кошику  од. на суму  грн.
LBA110L LBA110L IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
2+411.27 грн
10+338.15 грн
50+298.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LBA110LS LBA110LS IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110LSTR IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110P LBA110P IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110PLTR IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110PTR IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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CPC1010N CPC1010N IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
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CPC1010NTR CPC1010NTR IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
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CPC1016NTR CPC1016NTR IXYS CPC1016N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 16Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
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CPC1019NTR CPC1019NTR IXYS CPC1019N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 750mA
On-state resistance: 0.6Ω
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
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IXTQ200N10T IXTQ200N10T IXYS IXTH(Q)200N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+626.87 грн
В кошику  од. на суму  грн.
IXFK200N10P IXFK200N10P IXYS IXFK(X)200N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 235nC
On-state resistance: 7.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 830W
Kind of channel: enhancement
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IXGP20N120B IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
Gate charge: 72nC
Turn-off time: 150ns
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IXGH10N170A IXGH10N170A IXYS IXG_10N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
1+642.27 грн
10+483.68 грн
В кошику  од. на суму  грн.
IXGH10N170 IXGH10N170 IXYS IXGH(t)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXTY32P05T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; DPAK,TO252AA
Case: DPAK; TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
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IXTA32P05T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
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IXBT2N250 IXBT2N250 IXYS IXBH(T)2N250.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
1+1762.85 грн
10+1477.11 грн
В кошику  од. на суму  грн.
IXGH2N250 IXGH2N250 IXYS IXGH2N250.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.5nC
Turn-on time: 115ns
Turn-off time: 278ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: NPT
Case: TO247-3
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
1+1777.34 грн
3+1453.55 грн
10+1317.28 грн
30+1174.28 грн
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IXTY48P05T IXT_48P05T.pdf
IXTY48P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
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IXTA48P05T IXT_48P05T.pdf
IXTA48P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
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IXTA48P05T-TRL littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
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IXTY48P05T-TRL littelfusediscretemosfetspchannelixt48p05td.pdf
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
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DSA120X200LB-TUB DSA120X200LB.pdf
DSA120X200LB-TUB
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Semiconductor structure: double independent
Case: SMPD
Mounting: SMD
Type of diode: Schottky rectifying
Power dissipation: 185W
Max. forward voltage: 0.67V
Max. off-state voltage: 200V
Load current: 65A x2
Max. forward impulse current: 700A
Kind of package: tube
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1463.91 грн
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DSEI30-10AR 93021.pdf
DSEI30-10AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 200A; ISOPLUS247™; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
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NCD2400MTR NCD2400M.pdf
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
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IXFN360N15T2 IXFN360N15T2.pdf
IXFN360N15T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Power dissipation: 1.07kW
Gate-source voltage: ±30V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXBF20N360 IXBF20N360.pdf
IXBF20N360
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Mounting: THT
Gate charge: 110nC
Power dissipation: 230W
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
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IXBX50N360HV IXBX50N360HV.pdf
IXBX50N360HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Mounting: THT
Gate charge: 0.21µC
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
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CPC3720CTR CPC3720.pdf
CPC3720CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
на замовлення 376 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+44.39 грн
19+23.22 грн
25+21.20 грн
100+18.67 грн
250+17.16 грн
Мінімальне замовлення: 11
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MCC95-16io1B MCC95-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2724.89 грн
5+2521.01 грн
В кошику  од. на суму  грн.
MDD95-16N1B MDD95-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD95-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 1.6kV
Load current: 120A
Max. load current: 180A
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2473.06 грн
В кошику  од. на суму  грн.
MDD95-12N1B MDD95-12N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD95-12N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 1.2kV
Load current: 120A
Max. load current: 180A
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2314.53 грн
5+2023.03 грн
В кошику  од. на суму  грн.
MDD95-22N1B MDD95-22N1B-dte.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD95-22N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 2.2kV
Load current: 120A
Max. load current: 180A
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2944.12 грн
В кошику  од. на суму  грн.
MCD95-16io8B MCD95-16IO8B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD95-16io8B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward impulse current: 2.25kA
Max. forward voltage: 1.28V
Max. off-state voltage: 1.6kV
Load current: 116A
Max. load current: 180A
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2595.35 грн
10+2296.41 грн
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IX2127N IX2127.pdf
IX2127N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
на замовлення 811 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+55.26 грн
Мінімальне замовлення: 9
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LF2181NTR LF2181NTR.pdf
LF2181NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Kind of integrated circuit: gate driver; high-/low-side
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DH20-18A DH20-18A.pdf
DH20-18A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 300ns
Max. forward voltage: 2.35V
Power dissipation: 140W
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+422.14 грн
10+259.92 грн
Мінімальне замовлення: 2
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IXDH20N120 IXDH20N120_IXDH20N120D1.pdf
IXDH20N120
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 70nC
Turn-on time: 175ns
Turn-off time: 570ns
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Power dissipation: 200W
Collector-emitter voltage: 1.2kV
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+510.01 грн
3+426.48 грн
10+376.85 грн
30+338.15 грн
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CPC1966Y CPC1966.pdf
CPC1966Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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CPC1966YX6 CPC1966YX6.pdf
CPC1966YX6
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Operating temperature: -40...85°C
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IXKR25N80C IXKR25N80C.pdf
IXKR25N80C
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
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IXKC25N80C littelfuse_discrete_mosfets_n-channel_super_junction_ixkc25n80c_datasheet.pdf.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 550ns
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DSEP2X61-06A description DSEP2x61-06A.pdf
DSEP2X61-06A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.01V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1968.48 грн
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IXFH170N25X3 IXFH(K,T)170N25X3_HV.pdf
IXFH170N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
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IXFH170N10P IXFH170N10P_IXFK170N10P.pdf
IXFH170N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Gate-source voltage: ±20V
Technology: HiPerFET™; Polar™
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IXFH170N15X3 media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Gate-source voltage: ±20V
Technology: HiPerFET™; X3-Class
Pulsed drain current: 340A
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IXTA230N04T4 IXTA(P)230N04T4.pdf
IXTA230N04T4
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXTP230N04T4 IXTA(P)230N04T4.pdf
IXTP230N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXTP230N04T4M IXTP230N04T4M.pdf
IXTP230N04T4M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXFQ60N25X3 IXFA(P,Q)60N25X3.pdf
IXFQ60N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO3P; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO3P
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+683.04 грн
10+524.05 грн
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IXFA60N25X3 IXFA(P,Q)60N25X3.pdf
IXFA60N25X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO263
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+518.16 грн
10+364.23 грн
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IXFH60N50P3 IXF_60N50P3.pdf
IXFH60N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
на замовлення 327 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+728.33 грн
5+575.36 грн
10+513.96 грн
30+491.25 грн
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CPC1906Y CPC1906.pdf
CPC1906Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MIXA10WB1200TED MIXA10WB1200TED.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Semiconductor structure: diode/transistor
Case: E2-Pack
Application: motors; photovoltaics
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+5853.81 грн
3+4807.32 грн
6+4315.24 грн
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CLB30I1200HB CLB30I1200HB.pdf
CLB30I1200HB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+303.47 грн
3+248.99 грн
10+223.75 грн
30+215.34 грн
Мінімальне замовлення: 2
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CLB30I1200PZ-TUB CLB30I1200PZ.pdf
CLB30I1200PZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+237.34 грн
3+197.68 грн
10+174.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLB30I1200PZ-TRL
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: D2PAK
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LBA110 description littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0
LBA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 340 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+318.87 грн
10+254.04 грн
50+245.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LBA110S LBA110.pdf
LBA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+528.13 грн
50+449.19 грн
100+384.42 грн
В кошику  од. на суму  грн.
LBA110L LBA110L.pdf
LBA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+411.27 грн
10+338.15 грн
50+298.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LBA110LS LBA110L.pdf
LBA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110LSTR LBA110L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110P LBA110.pdf
LBA110P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110PLTR LBA110L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110PTR LBA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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CPC1010N CPC1010N.pdf
CPC1010N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
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CPC1010NTR CPC1010N.pdf
CPC1010NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
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CPC1016NTR CPC1016N.pdf
CPC1016NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 16Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
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CPC1019NTR CPC1019N.pdf
CPC1019NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 750mA
On-state resistance: 0.6Ω
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
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IXTQ200N10T IXTH(Q)200N10T.pdf
IXTQ200N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+626.87 грн
В кошику  од. на суму  грн.
IXFK200N10P IXFK(X)200N10P.pdf
IXFK200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 235nC
On-state resistance: 7.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 830W
Kind of channel: enhancement
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IXGP20N120B
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
Gate charge: 72nC
Turn-off time: 150ns
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IXGH10N170A IXG_10N170A.pdf
IXGH10N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+642.27 грн
10+483.68 грн
В кошику  од. на суму  грн.
IXGH10N170 IXGH(t)10N170.pdf
IXGH10N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXTY32P05T-TRL
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; DPAK,TO252AA
Case: DPAK; TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
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IXTA32P05T-TRL
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
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IXBT2N250 IXBH(T)2N250.pdf
IXBT2N250
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1762.85 грн
10+1477.11 грн
В кошику  од. на суму  грн.
IXGH2N250 IXGH2N250.pdf
IXGH2N250
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.5nC
Turn-on time: 115ns
Turn-off time: 278ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: NPT
Case: TO247-3
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1777.34 грн
3+1453.55 грн
10+1317.28 грн
30+1174.28 грн
В кошику  од. на суму  грн.
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