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MCB40P1200LB-TUB IXYS MCB40P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
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DSEP8-12A DSEP8-12A IXYS DSEP8-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A
Max. forward impulse current: 40A
Power dissipation: 60W
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
3+194.65 грн
10+159.19 грн
50+108.61 грн
100+88.72 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IX4426MTR IX4426MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
7+73.22 грн
10+49.33 грн
25+46.35 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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IX4426NE IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IX4426NETR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DSEP2X60-12A DSEP2X60-12A IXYS media?resourcetype=datasheets&itemid=c205d7ca-54ab-4175-bdd7-497f43ba7754&filename=Littelfuse-Power-Semiconductors-DSEP2x60-12A-Datasheet Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.52V
Max. forward impulse current: 0.8kA
Kind of package: tube
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. load current: 120A
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
1+3319.79 грн
3+2923.47 грн
В кошику  од. на суму  грн.
IXBN42N170A IXBN42N170A IXYS IXBN42N170A.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
1+3021.57 грн
3+2522.18 грн
В кошику  од. на суму  грн.
DSEI2X30-10B DSEI2X30-10B IXYS 238_DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Max. forward voltage: 2V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Type of semiconductor module: diode
Semiconductor structure: double independent
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+1654.54 грн
3+1509.00 грн
В кошику  од. на суму  грн.
IXTA1N170DHV IXTA1N170DHV IXYS IXTA(H)1N170DHV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTH1N170DHV IXTH1N170DHV IXYS IXTA(H)1N170DHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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MMIX1G320N60B3 IXYS MMIX1G320N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
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OMA160 OMA160 IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
1+594.67 грн
10+452.70 грн
25+393.83 грн
В кошику  од. на суму  грн.
CPC1560G CPC1560G IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
на замовлення 146 шт:
термін постачання 14-30 дні (днів)
2+325.01 грн
10+265.32 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC1560GS CPC1560GS IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
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CPC1560GSTR IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSEP30-06B DSEP30-06B IXYS media?resourcetype=datasheets&itemid=9922dd98-2752-4f64-b2f8-12debebce6e5&filename=littelfuse-power-semiconductors-dsep30-06b-datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
на замовлення 257 шт:
термін постачання 14-30 дні (днів)
2+328.59 грн
3+278.58 грн
10+247.91 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP30-06A DSEP30-06A IXYS DSEP30-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
2+337.52 грн
10+230.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP30-06BR DSEP30-06BR IXYS DSEP30-06BR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
2+435.73 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXYH40N90C3D1 IXYH40N90C3D1 IXYS IXYH40N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
1+773.25 грн
3+647.54 грн
5+601.94 грн
В кошику  од. на суму  грн.
IXYH40N90C3 IXYH40N90C3 IXYS IXYH40N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
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IXYX140N90C3 IXYX140N90C3 IXYS IXYK(X)140N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
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LCC110 LCC110 IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: THT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 69 шт:
термін постачання 14-30 дні (днів)
1+553.60 грн
50+418.71 грн
В кошику  од. на суму  грн.
LCC110S LCC110S IXYS lcc110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
1+906.29 грн
50+771.08 грн
100+659.15 грн
В кошику  од. на суму  грн.
LCC110P LCC110P IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
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LCC110PTR IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LCC110STR IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCC120 LCC120 IXYS LCC120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
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LCC120S LCC120S IXYS LCC120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
на замовлення 637 шт:
термін постачання 14-30 дні (днів)
1+690.21 грн
10+573.75 грн
25+546.39 грн
50+537.27 грн
В кошику  од. на суму  грн.
LCC120STR IXYS LCC120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110 LAA110 IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
LAA110PL LAA110PL IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
LAA110L LAA110L IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110LS LAA110LS IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110P IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110LSTR IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110PLTR IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110PTR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSS40-0008D DSS40-0008D IXYS DSS40-0008D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Case: TO247-3
Power dissipation: 155W
товару немає в наявності
В кошику  од. на суму  грн.
IXFA3N120 IXFA3N120 IXYS IXFA3N120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 3A
Gate charge: 39nC
Power dissipation: 200W
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
1+671.46 грн
3+557.17 грн
5+516.54 грн
10+456.84 грн
20+453.53 грн
В кошику  од. на суму  грн.
IXFK80N65X2 IXFK80N65X2 IXYS IXF_80N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+1575.07 грн
2+1227.93 грн
5+1186.47 грн
В кошику  од. на суму  грн.
IXFH80N65X2 IXFH80N65X2 IXYS IXF_80N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+951.83 грн
5+814.20 грн
10+771.08 грн
В кошику  од. на суму  грн.
IXFH80N65X2-4 IXFH80N65X2-4 IXYS IXFH80N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
1+1100.94 грн
2+971.73 грн
5+872.23 грн
10+786.83 грн
В кошику  од. на суму  грн.
IXTH80N65X2 IXTH80N65X2 IXYS IXTH80N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT80N65X2HV IXFT80N65X2HV IXYS IXFT80N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
В кошику  од. на суму  грн.
DCG160X650NA DCG160X650NA IXYS littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd Category: Diode modules
Description: Module: diode; double independent; 650V; If: 80Ax2; SOT227B; screw
Technology: SiC
Max. off-state voltage: 650V
Load current: 80A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.35V
Max. load current: 160A
Kind of package: tube
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
 Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IXFH46N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet?assetguid=516ae25a-80b7-429d-bae3-33030177c1a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Technology: HiPerFET™; X3-Class
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 40nC
Reverse recovery time: 165ns
On-state resistance: 73mΩ
Drain current: 46A
Gate-source voltage: ±20V
Power dissipation: 520W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IXYP48N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYP48N65A5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 48A; 326W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 0.1µC
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector current: 48A
Pulsed collector current: 236A
Collector-emitter voltage: 650V
Type of transistor: IGBT
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYA48N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA48N65A5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 48A; 326W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: tube
Gate charge: 0.1µC
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector current: 48A
Pulsed collector current: 236A
Collector-emitter voltage: 650V
Type of transistor: IGBT
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH90N65A5 IXYS IXYH90N65A5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 650W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 260nC
Turn-off time: 420ns
Gate-emitter voltage: ±20V
Power dissipation: 650W
Collector current: 90A
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Type of transistor: IGBT
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH05N250P3HV IXTH05N250P3HV IXYS IXTH05N250P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Case: TO247HV
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.5nC
Reverse recovery time: 1.2µs
Drain current: 0.33A
Pulsed drain current: 1A
Gate-source voltage: ±20V
Power dissipation: 104W
On-state resistance: 110Ω
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Technology: Polar3™
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MCC162-16io1 MCC162-16io1 IXYS MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
1+5107.38 грн
В кошику  од. на суму  грн.
MCC95-14io1B MCC95-14io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
1+2709.94 грн
5+2377.09 грн
В кошику  од. на суму  грн.
MCC56-16io1B MCC56-16io1B IXYS L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
1+2363.50 грн
7+2047.10 грн
10+1983.25 грн
В кошику  од. на суму  грн.
MCC95-12io1B MCC95-12io1B IXYS MCC95-12IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
1+2611.73 грн
3+2263.50 грн
В кошику  од. на суму  грн.
MCC26-16io1B MCC26-16io1B IXYS MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
1+2290.28 грн
5+1883.76 грн
В кошику  од. на суму  грн.
IXYH120N65C3 IXYS littelfuse-discrete-igbts-ixyh120n65c3-datasheet?assetguid=3a25f202-33cd-4cf6-bacc-7b1739e41fec Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Collector current: 260A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 620A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFB44N100P IXFB44N100P IXYS IXFB44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+2430.47 грн
5+1956.72 грн
В кошику  од. на суму  грн.
IXTP44N10T IXTP44N10T IXYS IXTP(Y)44N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
на замовлення 157 шт:
термін постачання 14-30 дні (днів)
3+172.33 грн
10+91.20 грн
50+82.08 грн
100+77.11 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MMIX1F44N100Q3MMIX1F44N100Q3
MMIX1F44N100Q3MMIX1F44N100Q3
 MMIX1F44N100Q3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+4078.76 грн
3+3343.01 грн
10+3004.73 грн
20+2805.74 грн
В кошику  од. на суму  грн.
MCB40P1200LB-TUB MCB40P1200LB.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
DSEP8-12A DSEP8-12A.pdf
DSEP8-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A
Max. forward impulse current: 40A
Power dissipation: 60W
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+194.65 грн
10+159.19 грн
50+108.61 грн
100+88.72 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IX4426MTR IX4426-27-28.pdf
IX4426MTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+73.22 грн
10+49.33 грн
25+46.35 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IX4426NE
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IX4426NETR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DSEP2X60-12A media?resourcetype=datasheets&itemid=c205d7ca-54ab-4175-bdd7-497f43ba7754&filename=Littelfuse-Power-Semiconductors-DSEP2x60-12A-Datasheet
DSEP2X60-12A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.52V
Max. forward impulse current: 0.8kA
Kind of package: tube
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. load current: 120A
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3319.79 грн
3+2923.47 грн
В кошику  од. на суму  грн.
IXBN42N170A IXBN42N170A.pdf
IXBN42N170A
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3021.57 грн
3+2522.18 грн
В кошику  од. на суму  грн.
DSEI2X30-10B 238_DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X30-10B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Max. forward voltage: 2V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Type of semiconductor module: diode
Semiconductor structure: double independent
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1654.54 грн
3+1509.00 грн
В кошику  од. на суму  грн.
IXTA1N170DHV IXTA(H)1N170DHV.pdf
IXTA1N170DHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTH1N170DHV IXTA(H)1N170DHV.pdf
IXTH1N170DHV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1G320N60B3 MMIX1G320N60B3.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
OMA160 OMA160.pdf
OMA160
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+594.67 грн
10+452.70 грн
25+393.83 грн
В кошику  од. на суму  грн.
CPC1560G CPC1560.pdf
CPC1560G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
на замовлення 146 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+325.01 грн
10+265.32 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC1560GS CPC1560.pdf
CPC1560GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
товару немає в наявності
В кошику  од. на суму  грн.
CPC1560GSTR CPC1560.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSEP30-06B media?resourcetype=datasheets&itemid=9922dd98-2752-4f64-b2f8-12debebce6e5&filename=littelfuse-power-semiconductors-dsep30-06b-datasheet
DSEP30-06B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
на замовлення 257 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+328.59 грн
3+278.58 грн
10+247.91 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP30-06A DSEP30-06A.pdf
DSEP30-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+337.52 грн
10+230.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP30-06BR DSEP30-06BR.pdf
DSEP30-06BR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+435.73 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXYH40N90C3D1 IXYH40N90C3D1.pdf
IXYH40N90C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+773.25 грн
3+647.54 грн
5+601.94 грн
В кошику  од. на суму  грн.
IXYH40N90C3 IXYH40N90C3.pdf
IXYH40N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYX140N90C3 IXYK(X)140N90C3.pdf
IXYX140N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
товару немає в наявності
В кошику  од. на суму  грн.
LCC110 LCC110.pdf
LCC110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: THT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 69 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+553.60 грн
50+418.71 грн
В кошику  од. на суму  грн.
LCC110S lcc110.pdf
LCC110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+906.29 грн
50+771.08 грн
100+659.15 грн
В кошику  од. на суму  грн.
LCC110P LCC110.pdf
LCC110P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
LCC110PTR LCC110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCC110STR LCC110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Manufacturer series: OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCC120 LCC120.pdf
LCC120
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
товару немає в наявності
В кошику  од. на суму  грн.
LCC120S LCC120.pdf
LCC120S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
на замовлення 637 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+690.21 грн
10+573.75 грн
25+546.39 грн
50+537.27 грн
В кошику  од. на суму  грн.
LCC120STR LCC120.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110 LAA110.pdf
LAA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LAA110PL LAA110L.pdf
LAA110PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LAA110L LAA110L.pdf
LAA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110LS LAA110L.pdf
LAA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110P LAA100.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
LAA110LSTR LAA100L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110PLTR LAA110L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110PTR LAA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSS40-0008D DSS40-0008D.pdf
DSS40-0008D
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Case: TO247-3
Power dissipation: 155W
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В кошику  од. на суму  грн.
IXFA3N120 IXFA3N120.pdf
IXFA3N120
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 3A
Gate charge: 39nC
Power dissipation: 200W
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+671.46 грн
3+557.17 грн
5+516.54 грн
10+456.84 грн
20+453.53 грн
В кошику  од. на суму  грн.
IXFK80N65X2 IXF_80N65X2.pdf
IXFK80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1575.07 грн
2+1227.93 грн
5+1186.47 грн
В кошику  од. на суму  грн.
IXFH80N65X2 IXF_80N65X2.pdf
IXFH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+951.83 грн
5+814.20 грн
10+771.08 грн
В кошику  од. на суму  грн.
IXFH80N65X2-4 IXFH80N65X2-4.pdf
IXFH80N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1100.94 грн
2+971.73 грн
5+872.23 грн
10+786.83 грн
В кошику  од. на суму  грн.
IXTH80N65X2 IXTH80N65X2.pdf
IXTH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
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IXFT80N65X2HV IXFT80N65X2HV.pdf
IXFT80N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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В кошику  од. на суму  грн.
DCG160X650NA littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd
DCG160X650NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 80Ax2; SOT227B; screw
Technology: SiC
Max. off-state voltage: 650V
Load current: 80A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.35V
Max. load current: 160A
Kind of package: tube
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IXFH46N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet?assetguid=516ae25a-80b7-429d-bae3-33030177c1a6
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Technology: HiPerFET™; X3-Class
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 40nC
Reverse recovery time: 165ns
On-state resistance: 73mΩ
Drain current: 46A
Gate-source voltage: ±20V
Power dissipation: 520W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IXYP48N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYP48N65A5Datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 48A; 326W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 0.1µC
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector current: 48A
Pulsed collector current: 236A
Collector-emitter voltage: 650V
Type of transistor: IGBT
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYA48N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA48N65A5Datasheet.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 48A; 326W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: tube
Gate charge: 0.1µC
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector current: 48A
Pulsed collector current: 236A
Collector-emitter voltage: 650V
Type of transistor: IGBT
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH90N65A5 IXYH90N65A5.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 650W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 260nC
Turn-off time: 420ns
Gate-emitter voltage: ±20V
Power dissipation: 650W
Collector current: 90A
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Type of transistor: IGBT
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH05N250P3HV IXTH05N250P3HV.pdf
IXTH05N250P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Case: TO247HV
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.5nC
Reverse recovery time: 1.2µs
Drain current: 0.33A
Pulsed drain current: 1A
Gate-source voltage: ±20V
Power dissipation: 104W
On-state resistance: 110Ω
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Technology: Polar3™
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MCC162-16io1 MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf
MCC162-16io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+5107.38 грн
В кошику  од. на суму  грн.
MCC95-14io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-14io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2709.94 грн
5+2377.09 грн
В кошику  од. на суму  грн.
MCC56-16io1B L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2363.50 грн
7+2047.10 грн
10+1983.25 грн
В кошику  од. на суму  грн.
MCC95-12io1B MCC95-12IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-12io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2611.73 грн
3+2263.50 грн
В кошику  од. на суму  грн.
MCC26-16io1B MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC26-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2290.28 грн
5+1883.76 грн
В кошику  од. на суму  грн.
IXYH120N65C3 littelfuse-discrete-igbts-ixyh120n65c3-datasheet?assetguid=3a25f202-33cd-4cf6-bacc-7b1739e41fec
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Collector current: 260A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 620A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFB44N100P IXFB44N100P.pdf
IXFB44N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2430.47 грн
5+1956.72 грн
В кошику  од. на суму  грн.
IXTP44N10T IXTP(Y)44N10T.pdf
IXTP44N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
на замовлення 157 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+172.33 грн
10+91.20 грн
50+82.08 грн
100+77.11 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MMIX1F44N100Q3 littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf
MMIX1F44N100Q3MMIX1F44N100Q3
MMIX1F44N100Q3MMIX1F44N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+4078.76 грн
3+3343.01 грн
10+3004.73 грн
20+2805.74 грн
В кошику  од. на суму  грн.
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