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MCD225-16io1 MCD225-16io1 IXYS MCD225-16io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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MCD225-18io1 MCD225-18io1 IXYS MCD225-18io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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MCD255-14io1 IXYS MCD255-14io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD255-18io1 IXYS MCD255-18io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD310-12io1 MCD310-12io1 IXYS MCD310-12io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD310-14io1 MCD310-14io1 IXYS MCD310-14io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD162-16io1B IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCD26-16IO1B IXYS MCD26-16io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
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MCD26-14IO1B IXYS MCD26-14io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
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MCMA260PD1800YB IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Max. forward voltage: 1.06V
Load current: 260A
Max. load current: 408A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8.3kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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LBB110 LBB110 IXYS LBB110.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LBB110S LBB110S IXYS LBB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LBB110P LBB110P IXYS LBB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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LBB110PTR IXYS LBB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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 Мінімальне замовлення: 1000 шт
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LBB110STR IXYS LBB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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 Мінімальне замовлення: 1000 шт
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LF2136BTR IXYS LF2136BTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Type of integrated circuit: driver
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
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 Мінімальне замовлення: 1500 шт
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IX2120B IX2120B IXYS IX2120.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...150°C
Voltage class: 1.2kV
Kind of package: tube
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 15...20V
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
4+120.77 грн
10+118.25 грн
Мінімальне замовлення: 4 шт
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IXFA130N10T2 IXFA130N10T2 IXYS IXFA(P)130N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 298 шт:
термін постачання 14-30 дні (днів)
2+401.00 грн
10+323.72 грн
50+243.21 грн
100+232.31 грн
Мінімальне замовлення: 2 шт
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IXTN30N100L IXTN30N100L IXYS IXTN30N100L.pdf Category: Transistor modules
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXTB30N100L IXYS IXTB30N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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IXTA130N10T-TRL IXYS IXTA130N10T.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXFP130N10T2 IXFP130N10T2 IXYS IXFA(P)130N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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 Мінімальне замовлення: 300 шт
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IXTP130N10T IXTP130N10T IXYS IXTA(P)130N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA130N10T IXYS IXTA130N10T.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXTA130N10T7 IXYS IXTA130N10T7.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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DSP25-12AT-TUB DSP25-12AT-TUB IXYS DSP25-12AT.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
1+548.22 грн
3+458.74 грн
10+405.07 грн
30+370.68 грн
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LIA136 IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA136S IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA135 IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA136STR IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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 Мінімальне замовлення: 1000 шт
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IXGA48N60A3 IXGA48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector current: 48A
Collector-emitter voltage: 600V
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
2+403.71 грн
3+335.46 грн
10+274.24 грн
50+242.37 грн
Мінімальне замовлення: 2 шт
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PLA192S PLA192S IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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PLA192STR IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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 Мінімальне замовлення: 1000 шт
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CPC1708J CPC1708J IXYS CPC1708.pdf Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 80mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: i4-pac
Max. operating current: 5350mA
Turn-off time: 5ms
на замовлення 142 шт:
термін постачання 14-30 дні (днів)
1+1520.92 грн
10+1217.72 грн
25+1143.08 грн
100+1029.02 грн
В кошику  од. на суму  грн.
VHFD29-16IO1 IXYS VHFD29.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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DSSK48-003BS DSSK48-003BS IXYS DSSK48-003BS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.35V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Power dissipation: 105W
на замовлення 549 шт:
термін постачання 14-30 дні (днів)
7+74.06 грн
10+66.25 грн
25+63.74 грн
100+62.90 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IXTH75N10L2 IXTH75N10L2 IXYS IXT_75N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYH50N120C3D1 IXYH50N120C3D1 IXYS IXYH50N120C3d1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
1+890.52 грн
3+784.98 грн
5+754.78 грн
10+703.63 грн
30+690.21 грн
В кошику  од. на суму  грн.
IXGN50N120C3H1 IXGN50N120C3H1 IXYS IXGN50N120C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Power dissipation: 460W
Technology: GenX3™; PT
Pulsed collector current: 240A
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 50A
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IXYH50N120C3 IXYH50N120C3 IXYS IXYH50N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
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IXYR50N120C3D1 IXYR50N120C3D1 IXYS IXYR50N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Case: PLUS247™
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
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IXGH50N120C3 IXGH50N120C3 IXYS IXGH50N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Collector-emitter voltage: 1.2kV
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IXGK50N120C3H1 IXGK50N120C3H1 IXYS IXGK(X)50N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
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IXGX50N120C3H1 IXGX50N120C3H1 IXYS IXGK(X)50N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Pulsed collector current: 240A
Type of transistor: IGBT
Turn-on time: 60ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
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IXTH24N65X2 IXTH24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 36nC
Technology: X2-Class
Power dissipation: 390W
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYH16N250C IXYS DS100793A(IXYH16N250C)_.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
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IXYH16N250CV1HV IXYH16N250CV1HV IXYS IXYH16N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
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CPC1788J CPC1788J IXYS CPC1788.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Control current max.: 100mA
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+1889.41 грн
В кошику  од. на суму  грн.
CPC1705Y CPC1705Y IXYS CPC1705y.pdf Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 2.5kV
Turn-on time: 2ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 3.25A
Turn-off time: 12ms
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
1+652.99 грн
10+540.09 грн
25+489.77 грн
В кошику  од. на суму  грн.
PLA171P PLA171P IXYS PLA171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
на замовлення 132 шт:
термін постачання 14-30 дні (днів)
1+528.35 грн
10+472.16 грн
50+392.49 грн
100+363.14 грн
В кошику  од. на суму  грн.
PLB171P PLB171P IXYS PLB171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
1+843.55 грн
10+625.63 грн
В кошику  од. на суму  грн.
PLA134 PLA134 IXYS PLA134.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+1393.58 грн
В кошику  од. на суму  грн.
CPC1981Y CPC1981Y IXYS CPC1981.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 1kV AC
Case: SIP4
Max. operating current: 180mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 18Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Kind of output: MOSFET
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
1+645.76 грн
В кошику  од. на суму  грн.
IXBF42N300 IXBF42N300 IXYS IXBF42N300.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
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LCA210LS LCA210LS IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LCA220STR IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LCA210L LCA210L IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LCA210LSTR IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LCA210STR IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LCA220S LCA220S IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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MCD225-16io1 MCD225-16io1.pdf
MCD225-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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MCD225-18io1 MCD225-18io1.pdf
MCD225-18io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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MCD255-14io1 MCD255-14io1.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD255-18io1 MCD255-18io1.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD310-12io1 MCD310-12io1.pdf
MCD310-12io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD310-14io1 MCD310-14io1.pdf
MCD310-14io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD162-16io1B PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCD26-16IO1B MCD26-16io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
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MCD26-14IO1B MCD26-14io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
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MCMA260PD1800YB PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Max. forward voltage: 1.06V
Load current: 260A
Max. load current: 408A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8.3kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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LBB110 description LBB110.pdf
LBB110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LBB110S LBB110.pdf
LBB110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LBB110P LBB110.pdf
LBB110P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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LBB110PTR LBB110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBB110STR LBB110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LF2136BTR LF2136BTR.pdf
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Type of integrated circuit: driver
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 1500 шт
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IX2120B IX2120.pdf
IX2120B
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...150°C
Voltage class: 1.2kV
Kind of package: tube
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 15...20V
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+120.77 грн
10+118.25 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXFA130N10T2 IXFA(P)130N10T2.pdf
IXFA130N10T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 298 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+401.00 грн
10+323.72 грн
50+243.21 грн
100+232.31 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTN30N100L IXTN30N100L.pdf
IXTN30N100L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXTB30N100L IXTB30N100L.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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IXTA130N10T-TRL IXTA130N10T.PDF
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXFP130N10T2 IXFA(P)130N10T2.pdf
IXFP130N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTP130N10T IXTA(P)130N10T.pdf
IXTP130N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA130N10T IXTA130N10T.PDF
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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IXTA130N10T7 IXTA130N10T7.PDF
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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DSP25-12AT-TUB DSP25-12AT.pdf
DSP25-12AT-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+548.22 грн
3+458.74 грн
10+405.07 грн
30+370.68 грн
В кошику  од. на суму  грн.
LIA136 LIA135.pdf
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA136S LIA135.pdf
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA135 LIA135.pdf
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA136STR LIA135.pdf
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXGA48N60A3 IXGA(P,H)48N60A3.pdf
IXGA48N60A3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector current: 48A
Collector-emitter voltage: 600V
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+403.71 грн
3+335.46 грн
10+274.24 грн
50+242.37 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PLA192S PLA192.pdf
PLA192S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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PLA192STR PLA192.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1708J CPC1708.pdf
CPC1708J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 80mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: i4-pac
Max. operating current: 5350mA
Turn-off time: 5ms
на замовлення 142 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1520.92 грн
10+1217.72 грн
25+1143.08 грн
100+1029.02 грн
В кошику  од. на суму  грн.
VHFD29-16IO1 VHFD29.pdf
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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DSSK48-003BS DSSK48-003BS.pdf
DSSK48-003BS
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.35V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Power dissipation: 105W
на замовлення 549 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+74.06 грн
10+66.25 грн
25+63.74 грн
100+62.90 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IXTH75N10L2 IXT_75N10L2.pdf
IXTH75N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH50N120C3D1 IXYH50N120C3d1.pdf
IXYH50N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+890.52 грн
3+784.98 грн
5+754.78 грн
10+703.63 грн
30+690.21 грн
В кошику  од. на суму  грн.
IXGN50N120C3H1 IXGN50N120C3H1.pdf
IXGN50N120C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Power dissipation: 460W
Technology: GenX3™; PT
Pulsed collector current: 240A
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 50A
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IXYH50N120C3 IXYH50N120C3.pdf
IXYH50N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
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IXYR50N120C3D1 IXYR50N120C3D1.pdf
IXYR50N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Case: PLUS247™
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
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IXGH50N120C3 IXGH50N120C3.pdf
IXGH50N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Collector-emitter voltage: 1.2kV
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IXGK50N120C3H1 IXGK(X)50N120C3H1.pdf
IXGK50N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
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IXGX50N120C3H1 IXGK(X)50N120C3H1.pdf
IXGX50N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Pulsed collector current: 240A
Type of transistor: IGBT
Turn-on time: 60ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
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IXTH24N65X2 IXT_24N65X2.pdf
IXTH24N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 36nC
Technology: X2-Class
Power dissipation: 390W
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXYH16N250C DS100793A(IXYH16N250C)_.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
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IXYH16N250CV1HV IXYH16N250CV1HV.pdf
IXYH16N250CV1HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
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CPC1788J CPC1788.pdf
CPC1788J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Control current max.: 100mA
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1889.41 грн
В кошику  од. на суму  грн.
CPC1705Y CPC1705y.pdf
CPC1705Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 2.5kV
Turn-on time: 2ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 3.25A
Turn-off time: 12ms
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+652.99 грн
10+540.09 грн
25+489.77 грн
В кошику  од. на суму  грн.
PLA171P PLA171.pdf
PLA171P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
на замовлення 132 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+528.35 грн
10+472.16 грн
50+392.49 грн
100+363.14 грн
В кошику  од. на суму  грн.
PLB171P PLB171.pdf
PLB171P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+843.55 грн
10+625.63 грн
В кошику  од. на суму  грн.
PLA134 PLA134.pdf
PLA134
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1393.58 грн
В кошику  од. на суму  грн.
CPC1981Y CPC1981.pdf
CPC1981Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 1kV AC
Case: SIP4
Max. operating current: 180mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 18Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Kind of output: MOSFET
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+645.76 грн
В кошику  од. на суму  грн.
IXBF42N300 IXBF42N300.pdf
IXBF42N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
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LCA210LS LCA210L.pdf
LCA210LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LCA220STR LCA220.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA210L LCA210L.pdf
LCA210L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LCA210LSTR LCA210L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA210STR LCA210L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA220S LCA220.pdf
LCA220S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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