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IXFH80N65X2 IXFH80N65X2 IXYS IXF_80N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
1+962.77 грн
5+823.55 грн
В кошику  од. на суму  грн.
IXFH80N65X2-4 IXFH80N65X2-4 IXYS IXFH80N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-4
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
1+1113.60 грн
2+982.90 грн
5+882.26 грн
10+795.88 грн
В кошику  од. на суму  грн.
IXTH80N65X2 IXTH80N65X2 IXYS IXTH80N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
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IXFT80N65X2HV IXFT80N65X2HV IXYS IXFT80N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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MCC56-16io1B MCC56-16io1B IXYS L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+2390.67 грн
7+2070.63 грн
10+2006.05 грн
В кошику  од. на суму  грн.
IXYH120N65C3 IXYS littelfuse-discrete-igbts-ixyh120n65c3-datasheet?assetguid=3a25f202-33cd-4cf6-bacc-7b1739e41fec Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 260A
Collector-emitter voltage: 650V
Pulsed collector current: 620A
Gate-emitter voltage: ±20V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFB44N100P IXFB44N100P IXYS IXFB44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXTP44N10T IXTP44N10T IXYS IXTP(Y)44N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
3+174.31 грн
10+92.25 грн
50+83.03 грн
100+77.99 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MMIX1F44N100Q3MMIX1F44N100Q3
MMIX1F44N100Q3MMIX1F44N100Q3
 MMIX1F44N100Q3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+4125.64 грн
3+3381.43 грн
10+3039.27 грн
20+2837.99 грн
В кошику  од. на суму  грн.
IXFA4N100P IXFA4N100P IXYS IXFA(P)4N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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IXFA4N100Q IXFA4N100Q IXYS DS98705BIXFAFP4N100Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 250ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFP4N100PM IXFP4N100PM IXYS IXFP4N100PM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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IXTH4N100L IXTH4N100L IXYS IXTH4N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFB44N100Q3 IXFB44N100Q3 IXYS IXFB44N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
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IXGA48N60C3-TRL IXGA48N60C3-TRL IXYS littelfuse-discrete-igbts-ixg-48n60c3-datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; D2PAK
Type of transistor: IGBT
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Pulsed collector current: 250A
Gate-emitter voltage: ±20V
Collector current: 75A
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA110N055T2 IXTA110N055T2 IXYS IXTA(P)110N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
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IXTQ36P15P IXTQ36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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MCMA550PD1600PTSF IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 864A
Max. forward impulse current: 13kA
Load current: 550A
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DSEI12-10A DSEI12-10A IXYS Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.7V
Heatsink thickness: 2.29...2.79mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
3+223.98 грн
5+157.67 грн
10+130.83 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
CPC1001N CPC1001N IXYS cpc1001n-datasheet?assetguid=9b562ce7-7e8a-413c-90c8-16af0748e7f8 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Case: SOP4
Turn-off time: 30µs
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 100-800%@0.2mA
Kind of output: transistor
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CPC1001NTR CPC1001NTR IXYS CPC1001N.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Switched voltage: max. 30V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 30µs
Number of channels: 1
Control current max.: 5mA
Mounting: SMD
CTR@If: 100-800%@0.2mA
Kind of output: transistor
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXFH44N50P IXFH44N50P IXYS IXFK44N50P.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+953.74 грн
5+745.56 грн
В кошику  од. на суму  грн.
PBB150P PBB150P IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150 PBB150 IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150PTR IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
PBB150S PBB150S IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150STR IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1303GRTR CPC1303GRTR IXYS CPC1303GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: SO4
Turn-off time: 8µs
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
3+162.57 грн
10+139.22 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
CPC1301G CPC1301G IXYS CPC1301G.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; DIP4
Case: DIP4
Turn-off time: 60µs
Turn-on time: 1µs
Kind of output: Darlington
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 1
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Insulation voltage: 5kV
Mounting: THT
Type of optocoupler: optocoupler
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
4+112.90 грн
10+68.77 грн
50+61.22 грн
100+60.38 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
LCA127L LCA127L IXYS LCA127L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 65 шт:
термін постачання 14-30 дні (днів)
1+708.08 грн
50+431.07 грн
В кошику  од. на суму  грн.
LCA127S LCA127S IXYS LCA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
1+695.43 грн
50+423.52 грн
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LCB127 LCB127 IXYS LCB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+545.51 грн
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LCA127 LCA127 IXYS LCA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
2+418.16 грн
Мінімальне замовлення: 2 шт
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LCB127S LCB127S IXYS LCB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+451.58 грн
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CS60-16IO1 CS60-16IO1 IXYS CS60-16IO1.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.6kV
Case: PLUS247™
Kind of package: tube
на замовлення 186 шт:
термін постачання 14-30 дні (днів)
1+1204.82 грн
5+922.51 грн
10+826.91 грн
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LBB127P LBB127P IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.66x6.35x2.16mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
1+967.29 грн
10+696.08 грн
50+621.44 грн
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CS60-14io1 CS60-14io1 IXYS CS60-14io1.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.4kV
Case: ISOPLUS247™
Kind of package: tube
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
1+1341.19 грн
3+1101.99 грн
10+988.77 грн
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PAA127 PAA127 IXYS PAA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 280V AC; max. 280V DC
Turn-off time: 0.5ms
Turn-on time: 500µs
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
1+689.11 грн
50+419.32 грн
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LBA127L LBA127L IXYS LBA127L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
1+1252.68 грн
50+762.33 грн
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LBA127 LBA127 IXYS LBA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
1+964.58 грн
10+690.21 грн
50+618.92 грн
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LBA127LS LBA127LS IXYS LBA127L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+829.10 грн
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MDD56-16N1B MDD56-16N1B IXYS MDD56-16N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Mechanical mounting: screw
Max. forward voltage: 1.14V
Load current: 71A
Max. load current: 150A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+2328.35 грн
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MCD95-16io1 IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 182A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA120PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 2.2kA
Electrical mounting: FASTON connectors; screw
Max. load current: 190A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA150PD2200YB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.18V
Max. forward impulse current: 4.3kA
Electrical mounting: FASTON connectors; screw
Max. load current: 235A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA40PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 40A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 63A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA55PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 55A
Case: TO240AA
Max. forward voltage: 1.2V
Max. forward impulse current: 1kA
Electrical mounting: FASTON connectors; screw
Max. load current: 86A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA75PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.4kA
Electrical mounting: FASTON connectors; screw
Max. load current: 118A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA95PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 149A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCD224-20io1 MCD224-20io1 IXYS MCD224-20IO1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
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MCD224-22io1 MCD224-22io1 IXYS MCD224-22io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
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MCD310-22io1 MCD310-22io1 IXYS MCD310-22io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD225-14io1 MCD225-14io1 IXYS MCD225-14io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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MCD255-16io1 MCD255-16io1 IXYS MCD255-16io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD310-08io1 MCD310-08io1 IXYS MCD310-08io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD310-16io1 MCD310-16io1 IXYS MCC310-16IO1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD310-18io1 MCD310-18io1 IXYS MCD310-18io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCMA265PD1600KB IXYS MCMA265PD1600KB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Electrical mounting: screw
Max. load current: 421A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD255-12io1 IXYS MCD255-12io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD225-12io1 MCD225-12io1 IXYS MCD225-12io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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IXFH80N65X2 IXF_80N65X2.pdf
IXFH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+962.77 грн
5+823.55 грн
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IXFH80N65X2-4 IXFH80N65X2-4.pdf
IXFH80N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-4
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1113.60 грн
2+982.90 грн
5+882.26 грн
10+795.88 грн
В кошику  од. на суму  грн.
IXTH80N65X2 IXTH80N65X2.pdf
IXTH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
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IXFT80N65X2HV IXFT80N65X2HV.pdf
IXFT80N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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MCC56-16io1B L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2390.67 грн
7+2070.63 грн
10+2006.05 грн
В кошику  од. на суму  грн.
IXYH120N65C3 littelfuse-discrete-igbts-ixyh120n65c3-datasheet?assetguid=3a25f202-33cd-4cf6-bacc-7b1739e41fec
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 260A
Collector-emitter voltage: 650V
Pulsed collector current: 620A
Gate-emitter voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFB44N100P IXFB44N100P.pdf
IXFB44N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXTP44N10T IXTP(Y)44N10T.pdf
IXTP44N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+174.31 грн
10+92.25 грн
50+83.03 грн
100+77.99 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MMIX1F44N100Q3 littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf
MMIX1F44N100Q3MMIX1F44N100Q3
MMIX1F44N100Q3MMIX1F44N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+4125.64 грн
3+3381.43 грн
10+3039.27 грн
20+2837.99 грн
В кошику  од. на суму  грн.
IXFA4N100P IXFA(P)4N100P.pdf
IXFA4N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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IXFA4N100Q DS98705BIXFAFP4N100Q.pdf
IXFA4N100Q
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 250ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP4N100PM IXFP4N100PM.pdf
IXFP4N100PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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IXTH4N100L IXTH4N100L.pdf
IXTH4N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFB44N100Q3 IXFB44N100Q3.pdf
IXFB44N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
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IXGA48N60C3-TRL littelfuse-discrete-igbts-ixg-48n60c3-datasheet.pdf
IXGA48N60C3-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; D2PAK
Type of transistor: IGBT
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Pulsed collector current: 250A
Gate-emitter voltage: ±20V
Collector current: 75A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA110N055T2 IXTA(P)110N055T2.pdf
IXTA110N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
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IXTQ36P15P IXT_36P15P.pdf
IXTQ36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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MCMA550PD1600PTSF
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 864A
Max. forward impulse current: 13kA
Load current: 550A
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DSEI12-10A description Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251
DSEI12-10A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.7V
Heatsink thickness: 2.29...2.79mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+223.98 грн
5+157.67 грн
10+130.83 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
CPC1001N cpc1001n-datasheet?assetguid=9b562ce7-7e8a-413c-90c8-16af0748e7f8
CPC1001N
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Case: SOP4
Turn-off time: 30µs
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 100-800%@0.2mA
Kind of output: transistor
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CPC1001NTR CPC1001N.pdf
CPC1001NTR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Switched voltage: max. 30V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 30µs
Number of channels: 1
Control current max.: 5mA
Mounting: SMD
CTR@If: 100-800%@0.2mA
Kind of output: transistor
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXFH44N50P description IXFK44N50P.pdf
IXFH44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+953.74 грн
5+745.56 грн
В кошику  од. на суму  грн.
PBB150P PBB150.pdf
PBB150P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150 PBB150.pdf
PBB150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150PTR PBB150.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
PBB150S PBB150.pdf
PBB150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150STR PBB150.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1303GRTR CPC1303GR.pdf
CPC1303GRTR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: SO4
Turn-off time: 8µs
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+162.57 грн
10+139.22 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
CPC1301G CPC1301G.pdf
CPC1301G
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; DIP4
Case: DIP4
Turn-off time: 60µs
Turn-on time: 1µs
Kind of output: Darlington
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 1
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Insulation voltage: 5kV
Mounting: THT
Type of optocoupler: optocoupler
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+112.90 грн
10+68.77 грн
50+61.22 грн
100+60.38 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
LCA127L LCA127L.pdf
LCA127L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 65 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+708.08 грн
50+431.07 грн
В кошику  од. на суму  грн.
LCA127S LCA127.pdf
LCA127S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+695.43 грн
50+423.52 грн
В кошику  од. на суму  грн.
LCB127 LCB127.pdf
LCB127
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+545.51 грн
В кошику  од. на суму  грн.
LCA127 LCA127.pdf
LCA127
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+418.16 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
LCB127S LCB127.pdf
LCB127S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+451.58 грн
В кошику  од. на суму  грн.
CS60-16IO1 CS60-16IO1.pdf
CS60-16IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.6kV
Case: PLUS247™
Kind of package: tube
на замовлення 186 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1204.82 грн
5+922.51 грн
10+826.91 грн
В кошику  од. на суму  грн.
LBB127P LBB127.pdf
LBB127P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.66x6.35x2.16mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+967.29 грн
10+696.08 грн
50+621.44 грн
В кошику  од. на суму  грн.
CS60-14io1 CS60-14io1.pdf
CS60-14io1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.4kV
Case: ISOPLUS247™
Kind of package: tube
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1341.19 грн
3+1101.99 грн
10+988.77 грн
В кошику  од. на суму  грн.
PAA127 PAA127.pdf
PAA127
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 280V AC; max. 280V DC
Turn-off time: 0.5ms
Turn-on time: 500µs
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+689.11 грн
50+419.32 грн
В кошику  од. на суму  грн.
LBA127L LBA127L.pdf
LBA127L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1252.68 грн
50+762.33 грн
В кошику  од. на суму  грн.
LBA127 LBA127.pdf
LBA127
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+964.58 грн
10+690.21 грн
50+618.92 грн
В кошику  од. на суму  грн.
LBA127LS LBA127L.pdf
LBA127LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+829.10 грн
В кошику  од. на суму  грн.
MDD56-16N1B MDD56-16N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD56-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Mechanical mounting: screw
Max. forward voltage: 1.14V
Load current: 71A
Max. load current: 150A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2328.35 грн
В кошику  од. на суму  грн.
MCD95-16io1 PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 182A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA120PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 2.2kA
Electrical mounting: FASTON connectors; screw
Max. load current: 190A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA150PD2200YB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.18V
Max. forward impulse current: 4.3kA
Electrical mounting: FASTON connectors; screw
Max. load current: 235A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA40PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 40A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 63A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA55PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 55A
Case: TO240AA
Max. forward voltage: 1.2V
Max. forward impulse current: 1kA
Electrical mounting: FASTON connectors; screw
Max. load current: 86A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA75PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.4kA
Electrical mounting: FASTON connectors; screw
Max. load current: 118A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA95PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 149A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCD224-20io1 MCD224-20IO1.pdf
MCD224-20io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
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MCD224-22io1 MCD224-22io1.pdf
MCD224-22io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
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MCD310-22io1 MCD310-22io1.pdf
MCD310-22io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD225-14io1 MCD225-14io1.pdf
MCD225-14io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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MCD255-16io1 MCD255-16io1.pdf
MCD255-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD310-08io1 MCD310-08io1.pdf
MCD310-08io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD310-16io1 MCC310-16IO1.pdf
MCD310-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCD310-18io1 MCD310-18io1.pdf
MCD310-18io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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MCMA265PD1600KB MCMA265PD1600KB.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Electrical mounting: screw
Max. load current: 421A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD255-12io1 MCD255-12io1.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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MCD225-12io1 MCD225-12io1.pdf
MCD225-12io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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