| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXFX80N50Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFX80N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VBO25-12NO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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GBO25-12NO1 | IXYS |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 25A Max. forward impulse current: 370A Version: flat Case: GBFP Electrical mounting: THT Leads: flat pin Kind of package: tube |
на замовлення 63 шт: термін постачання 14-30 дні (днів) |
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VBO25-16AO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Features of semiconductor devices: avalanche breakdown effect |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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GBO25-16NO1 | IXYS |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 25A Max. forward impulse current: 370A Version: flat Case: GBFP Electrical mounting: THT Leads: flat pin Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VBO25-16NO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VBO25-12AO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Features of semiconductor devices: avalanche breakdown effect |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IXBH14N300HV | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 3kV; 38A; 200W; TO247HV Mounting: THT Collector-emitter voltage: 3kV Type of transistor: IGBT Case: TO247HV Kind of package: tube Gate charge: 62nC Gate-emitter voltage: ±20V Collector current: 38A Pulsed collector current: 120A Power dissipation: 200W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IXDD609PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 347 шт: термін постачання 14-30 дні (днів) |
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IXDD609CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 658 шт: термін постачання 14-30 дні (днів) |
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IXDD609SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 645 шт: термін постачання 14-30 дні (днів) |
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IXDD609YI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 857 шт: термін постачання 14-30 дні (днів) |
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IXDD609D2TR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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| IXDD609SITR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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PLB190 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
на замовлення 240 шт: термін постачання 14-30 дні (днів) |
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PLB190S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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| PLB190STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CPC1965Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Case: SIP4 Mounting: THT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Max. operating current: 1A Control current max.: 100mA Switched voltage: max. 260V AC Insulation voltage: 3.75kV Relay variant: 1-phase Type of relay: solid state |
на замовлення 239 шт: термін постачання 14-30 дні (днів) |
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PM1204 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Case: DIP6 Mounting: THT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Max. operating current: 0.5A Control current max.: 100mA Switched voltage: max. 400V AC Insulation voltage: 3.75kV Relay variant: 1-phase Type of relay: solid state |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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PM1205 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Mounting: THT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Max. operating current: 0.5A Control current max.: 100mA Switched voltage: max. 500V AC Insulation voltage: 3.75kV Relay variant: 1-phase Type of relay: solid state |
на замовлення 245 шт: термін постачання 14-30 дні (днів) |
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CPC1945Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS Case: SIP4 Mounting: THT Manufacturer series: OptoMOS Kind of output: MOSFET Switching method: zero voltage switching Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 3ms Body dimensions: 19.2x6.35x3.3mm Max. operating current: 1A Control current max.: 100mA On-state resistance: 0.34Ω Switched voltage: max. 120V AC Insulation voltage: 3.75kV Relay variant: 1-phase Type of relay: solid state |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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PD1201 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase Case: DIP4 Mounting: THT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Max. operating current: 1A Control current max.: 100mA Switched voltage: max. 400V AC Insulation voltage: 3.75kV Relay variant: 1-phase Type of relay: solid state |
на замовлення 185 шт: термін постачання 14-30 дні (днів) |
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CPC1943G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Case: DIP6 Mounting: THT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Max. operating current: 0.5A Control current max.: 100mA Switched voltage: max. 400V AC Insulation voltage: 3.75kV Relay variant: 1-phase Type of relay: solid state |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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PM1204S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Case: DIP6 Mounting: SMT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Max. operating current: 0.5A Control current max.: 100mA Switched voltage: max. 400V AC Insulation voltage: 3.75kV Relay variant: 1-phase Type of relay: solid state |
на замовлення 83 шт: термін постачання 14-30 дні (днів) |
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PM1206 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Mounting: THT Type of relay: solid state Switching method: zero voltage switching Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Max. operating current: 0.5A Switched voltage: max. 600V AC Insulation voltage: 3.75kV Relay variant: 1-phase Case: DIP6 |
на замовлення 83 шт: термін постачання 14-30 дні (днів) |
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CPC1943GS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Case: DIP6 Mounting: SMT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Max. operating current: 0.5A Control current max.: 100mA Switched voltage: max. 400V AC Insulation voltage: 3.75kV Relay variant: 1-phase Type of relay: solid state |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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LCA210S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Case: DIP8 Mounting: SMT Manufacturer series: OptoMOS Kind of output: MOSFET Contacts configuration: SPDT Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Max. operating current: 85mA Control current max.: 100mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Type of relay: solid state |
на замовлення 93 шт: термін постачання 14-30 дні (днів) |
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CPC1967J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC Case: i4-pac Mounting: THT Manufacturer series: OptoMOS Kind of output: MOSFET Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-on time: 20ms Turn-off time: 5ms Body dimensions: 19.91x20.88x5.03mm Max. operating current: 1350mA Control current max.: 100mA On-state resistance: 0.85Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 2.5kV Relay variant: 1-phase; current source Type of relay: solid state |
на замовлення 74 шт: термін постачання 14-30 дні (днів) |
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LCA220 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC Case: DIP8 Mounting: THT Manufacturer series: OptoMOS Kind of output: MOSFET Contacts configuration: SPDT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x3.3mm Max. operating current: 120mA Control current max.: 100mA On-state resistance: 20Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Type of relay: solid state |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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LCA210 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Case: DIP8 Mounting: THT Manufacturer series: OptoMOS Kind of output: MOSFET Contacts configuration: SPDT Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Max. operating current: 85mA Control current max.: 100mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Type of relay: solid state |
на замовлення 45 шт: термін постачання 14-30 дні (днів) |
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IXFK220N20X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264 Kind of channel: enhancement Technology: HiPerFET™; X3-Class Type of transistor: N-MOSFET Polarisation: unipolar Reverse recovery time: 116ns Gate charge: 204nC On-state resistance: 6.2mΩ Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 220A Power dissipation: 960W Kind of package: tube Mounting: THT Case: TO264 |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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IXFX74N50P2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™ Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 165nC On-state resistance: 77mΩ Drain current: 74A Drain-source voltage: 500V Power dissipation: 1.4kW Case: PLUS247™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXGH30N60C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 220W Pulsed collector current: 150A Collector-emitter voltage: 600V Technology: GenX3™; PT Turn-on time: 45ns Gate charge: 38nC Turn-off time: 160ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IXXH30N60C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 60A; 270W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 60A Gate-emitter voltage: ±20V Power dissipation: 270W Pulsed collector current: 110A Collector-emitter voltage: 600V Gate charge: 37nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IXYP24N100A4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1kV; 85A; 375W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1kV Collector current: 85A Power dissipation: 375W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 145A Mounting: THT Gate charge: 44nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IXYP24N100C4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1kV; 76A; 375W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1kV Collector current: 76A Power dissipation: 375W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 132A Mounting: THT Gate charge: 43nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MCMA35PD1600TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk Case: TO240AA Kind of package: bulk Features of semiconductor devices: Kelvin terminal Gate current: 78/200mA Threshold on-voltage: 0.87V Max. forward voltage: 1.22V Load current: 35A Max. load current: 55A Max. forward impulse current: 520A Max. off-state voltage: 1.6kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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MCD26-08IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk Case: TO240AA Kind of package: bulk Features of semiconductor devices: Kelvin terminal Gate current: 100/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.27V Load current: 27A Max. load current: 42A Max. forward impulse current: 520A Max. off-state voltage: 0.8kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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MCD44-12IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk Case: TO240AA Kind of package: bulk Features of semiconductor devices: Kelvin terminal Gate current: 100/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.34V Load current: 49A Max. load current: 77A Max. forward impulse current: 1.15kA Max. off-state voltage: 1.2kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MCD95-16IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk Case: TO240AA Kind of package: bulk Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.28V Load current: 116A Max. load current: 180A Max. forward impulse current: 2.25kA Max. off-state voltage: 1.6kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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MCD56-08IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk Case: TO240AA Kind of package: bulk Features of semiconductor devices: Kelvin terminal Gate current: 100/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.24V Load current: 60A Max. load current: 100A Max. forward impulse current: 1.5kA Max. off-state voltage: 0.8kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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MCD72-12IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk Case: TO240AA Kind of package: bulk Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.34V Load current: 85A Max. load current: 133A Max. forward impulse current: 1.7kA Max. off-state voltage: 1.2kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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MCD162-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Case: Y4-M6 Kind of package: bulk Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Threshold on-voltage: 0.88V Max. forward voltage: 1.03V Load current: 181A Max. load current: 300A Max. forward impulse current: 6kA Max. off-state voltage: 1.6kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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MCD162-18io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Case: Y4-M6 Kind of package: bulk Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Threshold on-voltage: 0.88V Max. forward voltage: 1.03V Load current: 181A Max. load current: 300A Max. forward impulse current: 6kA Max. off-state voltage: 1.8kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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IXFX120N30P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 1.13kW Case: PLUS247™ On-state resistance: 27mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFX120N25P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 700W Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFX120N30T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 960W Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 265nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DSA1-18D | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 2.3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Kind of package: tube Max. forward impulse current: 110A Case: FP-Case Max. forward voltage: 1.34V |
на замовлення 414 шт: термін постачання 14-30 дні (днів) |
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IXTP26P10T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: THT Kind of channel: enhancement Polarisation: unipolar Technology: TrenchP™ Reverse recovery time: 70ns Kind of package: tube Gate charge: 52nC |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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| IXTY26P10T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA Type of transistor: P-MOSFET Drain-source voltage: 100V Drain current: 26A Power dissipation: 150W Case: DPAK; TO252AA Gate-source voltage: 15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IXTY26P10T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252 Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO252 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Polarisation: unipolar Technology: TrenchP™ Reverse recovery time: 70ns Kind of package: tube Gate charge: 52nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA26P10T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263 Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Polarisation: unipolar Technology: TrenchP™ Reverse recovery time: 70ns Kind of package: tube Gate charge: 52nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFN55N50 | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 55A Pulsed drain current: 220A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 80mΩ Gate charge: 330nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 250ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1020N | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1020NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| CLA100E1200TZ-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; D3PAK,TO268AA; SMD; tube Type of thyristor: thyristor Case: D3PAK; TO268AA Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CMA50E1600HB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube Type of thyristor: thyristor Kind of package: tube Gate current: 80mA Load current: 50A Case: TO247AD Max. load current: 79A Max. forward impulse current: 595A Max. off-state voltage: 1.6kV Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CMA50E1600QB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube Type of thyristor: thyristor Kind of package: tube Gate current: 80mA Load current: 50A Case: TO3P Max. load current: 79A Max. forward impulse current: 595A Max. off-state voltage: 1.6kV Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CMA50E1600TZ-TRL | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; D3PAK,TO268AA; SMD; reel,tape Type of thyristor: thyristor Kind of package: reel; tape Case: D3PAK; TO268AA Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFX80N50Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IXFX80N50P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| VBO25-12NO2 |
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Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 6 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1601.48 грн |
| 5+ | 1325.01 грн |
| GBO25-12NO1 |
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Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
на замовлення 63 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 708.97 грн |
| 5+ | 608.20 грн |
| VBO25-16AO2 |
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Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
на замовлення 19 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2156.60 грн |
| 5+ | 1954.93 грн |
| GBO25-16NO1 |
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Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| VBO25-16NO2 |
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Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| VBO25-12AO2 |
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Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
товару немає в наявності
В кошику
од. на суму грн.
| IXBH14N300HV |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
товару немає в наявності
В кошику
од. на суму грн.
| IXDD609PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 347 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.36 грн |
| 10+ | 83.54 грн |
| 50+ | 76.86 грн |
| IXDD609CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 658 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.42 грн |
| 10+ | 164.58 грн |
| 50+ | 158.73 грн |
| 100+ | 148.71 грн |
| 250+ | 145.37 грн |
| IXDD609SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 645 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 193.44 грн |
| 10+ | 136.18 грн |
| 25+ | 130.33 грн |
| 50+ | 129.49 грн |
| IXDD609YI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 857 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.53 грн |
| 10+ | 186.30 грн |
| 50+ | 163.75 грн |
| 100+ | 153.72 грн |
| 250+ | 151.21 грн |
| IXDD609D2TR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 24 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.47 грн |
| 10+ | 76.86 грн |
| IXDD609SITR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
В кошику
од. на суму грн.
| PLB190 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 401.27 грн |
| 10+ | 323.32 грн |
| 50+ | 278.20 грн |
| PLB190S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 399.47 грн |
| PLB190STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| CPC1965Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 239 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 448.05 грн |
| 10+ | 382.63 грн |
| 25+ | 367.59 грн |
| PM1204 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 250 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 533.53 грн |
| 10+ | 362.58 грн |
| 50+ | 302.43 грн |
| 100+ | 290.73 грн |
| PM1205 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 245 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 376.98 грн |
| 10+ | 293.24 грн |
| 100+ | 285.72 грн |
| CPC1945Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Case: SIP4
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Switching method: zero voltage switching
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
On-state resistance: 0.34Ω
Switched voltage: max. 120V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Case: SIP4
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Switching method: zero voltage switching
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
On-state resistance: 0.34Ω
Switched voltage: max. 120V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 233.02 грн |
| PD1201 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: DIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: DIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 185 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 645.99 грн |
| 10+ | 490.40 грн |
| 25+ | 434.43 грн |
| 100+ | 400.18 грн |
| CPC1943G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 13 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 579.41 грн |
| PM1204S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 83 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 599.20 грн |
| 50+ | 364.25 грн |
| PM1206 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
на замовлення 83 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 672.08 грн |
| 50+ | 409.37 грн |
| CPC1943GS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 458.85 грн |
| LCA210S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 85mA
Control current max.: 100mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 85mA
Control current max.: 100mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
на замовлення 93 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 431.86 грн |
| 50+ | 262.33 грн |
| CPC1967J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Case: i4-pac
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Max. operating current: 1350mA
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 2.5kV
Relay variant: 1-phase; current source
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Case: i4-pac
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Max. operating current: 1350mA
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 2.5kV
Relay variant: 1-phase; current source
Type of relay: solid state
на замовлення 74 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1184.01 грн |
| 25+ | 1061.85 грн |
| LCA220 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 100mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 100mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
на замовлення 32 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 451.65 грн |
| 10+ | 340.86 грн |
| LCA210 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 85mA
Control current max.: 100mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 85mA
Control current max.: 100mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
на замовлення 45 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 261.81 грн |
| 10+ | 238.10 грн |
| IXFK220N20X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 116ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Kind of package: tube
Mounting: THT
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 116ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Kind of package: tube
Mounting: THT
Case: TO264
на замовлення 44 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1338.76 грн |
| 3+ | 1096.10 грн |
| 10+ | 982.48 грн |
| IXFX74N50P2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 77mΩ
Drain current: 74A
Drain-source voltage: 500V
Power dissipation: 1.4kW
Case: PLUS247™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 77mΩ
Drain current: 74A
Drain-source voltage: 500V
Power dissipation: 1.4kW
Case: PLUS247™
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| IXGH30N60C3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 220W
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 45ns
Gate charge: 38nC
Turn-off time: 160ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 220W
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 45ns
Gate charge: 38nC
Turn-off time: 160ns
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| IXXH30N60C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Gate charge: 37nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Gate charge: 37nC
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| IXYP24N100A4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 85A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Collector current: 85A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 85A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Collector current: 85A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
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| IXYP24N100C4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 132A
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 132A
Mounting: THT
Gate charge: 43nC
Kind of package: tube
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| MCMA35PD1600TB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1619.47 грн |
| MCD26-08IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.27V
Load current: 27A
Max. load current: 42A
Max. forward impulse current: 520A
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.27V
Load current: 27A
Max. load current: 42A
Max. forward impulse current: 520A
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1462.02 грн |
| MCD44-12IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 49A
Max. load current: 77A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 49A
Max. load current: 77A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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| MCD95-16IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 116A
Max. load current: 180A
Max. forward impulse current: 2.25kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 116A
Max. load current: 180A
Max. forward impulse current: 2.25kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2722.51 грн |
| MCD56-08IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2218.67 грн |
| 3+ | 1819.59 грн |
| 10+ | 1639.14 грн |
| MCD72-12IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 85A
Max. load current: 133A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 85A
Max. load current: 133A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2777.39 грн |
| 3+ | 2278.25 грн |
| 10+ | 2045.16 грн |
| MCD162-16io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4538.12 грн |
| MCD162-18io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4795.43 грн |
| IXFX120N30P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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| IXFX120N25P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
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| IXFX120N30T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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од. на суму грн.
| DSA1-18D |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 414 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 381.48 грн |
| 10+ | 242.28 грн |
| 100+ | 230.58 грн |
| IXTP26P10T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.35 грн |
| IXTY26P10T-TRL |
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
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| IXTY26P10T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
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од. на суму грн.
| IXTA26P10T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
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| IXFN55N50 | ![]() |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
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| CPC1020N |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| CPC1020NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| CLA100E1200TZ-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; D3PAK,TO268AA; SMD; tube
Type of thyristor: thyristor
Case: D3PAK; TO268AA
Mounting: SMD
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; D3PAK,TO268AA; SMD; tube
Type of thyristor: thyristor
Case: D3PAK; TO268AA
Mounting: SMD
Kind of package: tube
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| CMA50E1600HB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
Load current: 50A
Case: TO247AD
Max. load current: 79A
Max. forward impulse current: 595A
Max. off-state voltage: 1.6kV
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
Load current: 50A
Case: TO247AD
Max. load current: 79A
Max. forward impulse current: 595A
Max. off-state voltage: 1.6kV
Mounting: THT
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| CMA50E1600QB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
Load current: 50A
Case: TO3P
Max. load current: 79A
Max. forward impulse current: 595A
Max. off-state voltage: 1.6kV
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
Load current: 50A
Case: TO3P
Max. load current: 79A
Max. forward impulse current: 595A
Max. off-state voltage: 1.6kV
Mounting: THT
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| CMA50E1600TZ-TRL |
![]() |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; D3PAK,TO268AA; SMD; reel,tape
Type of thyristor: thyristor
Kind of package: reel; tape
Case: D3PAK; TO268AA
Mounting: SMD
Category: SMD/THT thyristors
Description: Thyristor; D3PAK,TO268AA; SMD; reel,tape
Type of thyristor: thyristor
Kind of package: reel; tape
Case: D3PAK; TO268AA
Mounting: SMD
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