| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTP32P05T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB On-state resistance: 39mΩ Reverse recovery time: 26ns Mounting: THT Power dissipation: 83W Gate charge: 46nC Polarisation: unipolar Technology: TrenchP™ Drain current: -32A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO220AB |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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IXKK85N60C | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 85A Power dissipation: 694W Case: TO264 On-state resistance: 36mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1130N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Case: SOP4 On-state resistance: 30Ω Operating temperature: -40...85°C Contacts configuration: SPST-NC Insulation voltage: 1.5kV Turn-on time: 2ms Switched voltage: max. 350V AC; max. 350V DC Max. operating current: 120mA Turn-off time: 2ms Control current max.: 50mA Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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IXFH88N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3 Mounting: THT Type of transistor: N-MOSFET Case: TO247-3 Kind of package: tube Polarisation: unipolar Gate charge: 180nC On-state resistance: 40mΩ Drain current: 88A Drain-source voltage: 300V Power dissipation: 600W Kind of channel: enhancement |
на замовлення 292 шт: термін постачання 14-30 дні (днів) |
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IXFK150N30P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264 Case: TO264 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 197nC On-state resistance: 19mΩ Drain current: 150A Drain-source voltage: 300V Mounting: THT Power dissipation: 1.3kW Kind of package: tube |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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IXFK88N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264 Mounting: THT Type of transistor: N-MOSFET Case: TO264 Kind of package: tube Polarisation: unipolar Gate charge: 180nC On-state resistance: 40mΩ Drain current: 88A Drain-source voltage: 300V Power dissipation: 600W Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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IXFK140N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 140A Power dissipation: 1.04kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
на замовлення 56 шт: термін постачання 14-30 дні (днів) |
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IXFT120N30X3HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268 Mounting: SMD Power dissipation: 735W Gate charge: 170nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 120A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 11mΩ Reverse recovery time: 145ns |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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IXFB170N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 170A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 258nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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IXTK140N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Power dissipation: 1.04kW Gate charge: 185nC Polarisation: unipolar Technology: Polar™ Drain current: 140A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 0.24Ω Reverse recovery time: 250ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFK140N25T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 140A Power dissipation: 960W Case: TO264 On-state resistance: 17mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IXYK140N120A4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 1.5kW Pulsed collector current: 1.2kA Type of transistor: IGBT Kind of package: tube Case: TO264 Gate-emitter voltage: ±20V Collector current: 140A |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||
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IXYK140N90C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264 Mounting: THT Collector-emitter voltage: 900V Power dissipation: 1.63kW Gate charge: 330nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 840A Type of transistor: IGBT Turn-on time: 122ns Kind of package: tube Case: TO264 Turn-off time: 0.3µs Gate-emitter voltage: ±20V Collector current: 140A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFH12N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 463W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
на замовлення 263 шт: термін постачання 14-30 дні (днів) |
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IXTH12N100L | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 400W Case: TO247-3 On-state resistance: 1.3Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC3703CTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89 Kind of channel: depletion Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT89 On-state resistance: 4Ω Drain current: 0.36A Power dissipation: 1.1W Gate-source voltage: ±15V Drain-source voltage: 250V Polarisation: unipolar |
на замовлення 1478 шт: термін постачання 14-30 дні (днів) |
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DSEK60-02A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 34A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 325A Case: TO247-3 Max. forward voltage: 1.1V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
на замовлення 288 шт: термін постачання 14-30 дні (днів) |
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DSEK60-02AR | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 34A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 325A Case: ISOPLUS247™ Max. forward voltage: 1.1V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DNA30E2200PA | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W Mounting: THT Max. forward impulse current: 315A Max. forward voltage: 1.24V Power dissipation: 210W Max. off-state voltage: 2.2kV Load current: 30A Kind of package: tube Semiconductor structure: single diode Case: TO220AC Type of diode: rectifying |
на замовлення 294 шт: термін постачання 14-30 дні (днів) |
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DNA30E2200FE | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V Mounting: THT Max. forward impulse current: 370A Max. forward voltage: 1.22V Power dissipation: 110W Features of semiconductor devices: high voltage Max. off-state voltage: 2.2kV Load current: 30A Kind of package: tube Semiconductor structure: single diode Case: ISOPLUS i4-pac™ x024e Type of diode: rectifying |
на замовлення 226 шт: термін постачання 14-30 дні (днів) |
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| IXDI614SITR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SOIC8 Output current: 14A Number of channels: 1 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 18ns Application: automotive industry Maximum output current: 14A Supply voltage: 4.5...35V Kind of output: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
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IXFR26N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.43Ω Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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IXTP1R6N100D2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Gate charge: 645nC |
на замовлення 278 шт: термін постачання 14-30 дні (днів) |
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IXTY1R6N100D2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Gate charge: 645nC |
на замовлення 350 шт: термін постачання 14-30 дні (днів) |
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IXTA1R6N100D2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns Mounting: SMD Kind of channel: depletion Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 10Ω Reverse recovery time: 11ns Power dissipation: 100W Gate charge: 645nC Polarisation: unipolar Drain current: 1.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA1R6N100D2HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Mounting: SMD Kind of channel: depletion Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 10Ω Reverse recovery time: 970ns Power dissipation: 100W Gate charge: 27nC Polarisation: unipolar Technology: Polar™ Drain current: 1.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1117NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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CPC1014NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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IXTY44N10T | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns Case: TO252 Mounting: SMD Kind of package: tube Power dissipation: 130W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 44A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET On-state resistance: 30mΩ Reverse recovery time: 60ns |
на замовлення 421 шт: термін постачання 14-30 дні (днів) |
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| MCC72-08io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.82V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MCC72-08io8B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.82V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DSEI2X121-02A | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 123A x2 Case: SOT227B Max. forward voltage: 1.1V Max. forward impulse current: 1.3kA Electrical mounting: screw Max. load current: 246A Mechanical mounting: screw Kind of package: tube |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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CPC1130NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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CPC1114N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC Case: SOP4 On-state resistance: 2Ω Operating temperature: -40...85°C Contacts configuration: SPST-NC Insulation voltage: 1.5kV Turn-on time: 2ms Switched voltage: max. 60V AC; max. 60V DC Max. operating current: 0.4A Turn-off time: 5ms Control current max.: 50mA Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
на замовлення 648 шт: термін постачання 14-30 дні (днів) |
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CPC1114NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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CS45-16IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 71A Load current: 45A Gate current: 80mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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CS45-16IO1R | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A Gate current: 80mA Max. off-state voltage: 1.6kV Load current: 45A Max. load current: 71A Type of thyristor: standard |
на замовлення 197 шт: термін постачання 14-30 дні (днів) |
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CS45-12IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT Mounting: THT Max. forward impulse current: 520A Gate current: 80mA Max. off-state voltage: 1.2kV Load current: 45A Max. load current: 71A Kind of package: tube Case: TO247AD Type of thyristor: standard |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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IXTP100N04T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: TO220AB On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 34ns |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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IXTP48P05T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
на замовлення 291 шт: термін постачання 14-30 дні (днів) |
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IXTY48P05T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252 Case: TO252 Mounting: SMD Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA48P05T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA48P05T-TRL | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Power dissipation: 150W Drain current: 48A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: P-MOSFET Gate-source voltage: 15V On-state resistance: 30mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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IXTY48P05T-TRL | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA Case: DPAK; TO252AA Mounting: SMD Power dissipation: 150W Drain current: 48A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: P-MOSFET Gate-source voltage: 15V On-state resistance: 30mΩ |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
| NCD2400MTR | IXYS |
Category: Integrated circuits - othersDescription: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6 Type of integrated circuit: digital capacitor Interface: 2-wire; I2C Kind of memory: EEPROM; non-volatile Case: DFN6 Mounting: SMD Operating temperature: -40...105°C Supply voltage: 2.5...5.5V Kind of package: reel; tape Application: for OCXO application Capacitance: 1.7...203pF Number of positions: 512 Integrated circuit features: programmable |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
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IXDH20N120 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 175ns Turn-off time: 570ns |
на замовлення 176 шт: термін постачання 14-30 дні (днів) |
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CPC1966Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 240V AC Case: SIP4 Max. operating current: 3A Control current max.: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1966YX6 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Turn-on time: 500µs Switching method: instantaneous switching Switched voltage: max. 600V AC Case: SIP4 Max. operating current: 3A Control current max.: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFH60N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
на замовлення 132 шт: термін постачання 14-30 дні (днів) |
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CPC1906Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 10ms Switched voltage: max. 60V AC; max. 60V DC Case: SIP4 Max. operating current: 2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 0.3Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MIXA10WB1200TED | IXYS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Power dissipation: 60W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 30A Application: motors; photovoltaics Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CLB30I1200HB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 325A Case: TO247AD Gate current: 50mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: THT |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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CLB30I1200PZ-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 255A Case: TO263ABHV Gate current: 30/50mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: SMD |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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CLB30I1200PZ-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Kind of package: reel; tape Type of thyristor: thyristor Gate current: 30mA Max. load current: 47A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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LBA110 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Control current max.: 50mA |
на замовлення 105 шт: термін постачання 14-30 дні (днів) |
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LBA110S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
на замовлення 227 шт: термін постачання 14-30 дні (днів) |
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LBA110L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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CPC1010N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
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CPC1010NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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CPC1016NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| IXTP32P05T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
On-state resistance: 39mΩ
Reverse recovery time: 26ns
Mounting: THT
Power dissipation: 83W
Gate charge: 46nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
On-state resistance: 39mΩ
Reverse recovery time: 26ns
Mounting: THT
Power dissipation: 83W
Gate charge: 46nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 260.09 грн |
| 10+ | 202.64 грн |
| IXKK85N60C |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
товару немає в наявності
В кошику
од. на суму грн.
| CPC1130N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 310.86 грн |
| 6+ | 184.44 грн |
| IXFH88N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
на замовлення 292 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 847.98 грн |
| 6+ | 724.55 грн |
| 10+ | 699.73 грн |
| 30+ | 679.05 грн |
| IXFK150N30P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1467.92 грн |
| 3+ | 1234.04 грн |
| 10+ | 1131.48 грн |
| IXFK88N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1051.95 грн |
| IXFK140N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 56 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1300.47 грн |
| 3+ | 1141.41 грн |
| 50+ | 1128.17 грн |
| IXFT120N30X3HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Power dissipation: 735W
Gate charge: 170nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 11mΩ
Reverse recovery time: 145ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Power dissipation: 735W
Gate charge: 170nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 11mΩ
Reverse recovery time: 145ns
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1169.53 грн |
| 10+ | 926.36 грн |
| IXFB170N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1517.80 грн |
| IXTK140N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 0.24Ω
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 0.24Ω
Reverse recovery time: 250ns
товару немає в наявності
В кошику
од. на суму грн.
| IXFK140N25T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: TO264
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: TO264
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику
од. на суму грн.
| IXYK140N120A4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.5kW
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Kind of package: tube
Case: TO264
Gate-emitter voltage: ±20V
Collector current: 140A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.5kW
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Kind of package: tube
Case: TO264
Gate-emitter voltage: ±20V
Collector current: 140A
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Мінімальне замовлення: 300 шт
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| IXYK140N90C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 1.63kW
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 840A
Type of transistor: IGBT
Turn-on time: 122ns
Kind of package: tube
Case: TO264
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 1.63kW
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 840A
Type of transistor: IGBT
Turn-on time: 122ns
Kind of package: tube
Case: TO264
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
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| IXFH12N100P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 263 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 787.41 грн |
| 3+ | 647.62 грн |
| 5+ | 589.73 грн |
| 10+ | 503.71 грн |
| 30+ | 435.89 грн |
| IXTH12N100L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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| CPC3703CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
на замовлення 1478 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 85.51 грн |
| 10+ | 50.21 грн |
| 100+ | 33.25 грн |
| 250+ | 28.87 грн |
| 500+ | 28.20 грн |
| DSEK60-02A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 366.98 грн |
| 10+ | 301.07 грн |
| DSEK60-02AR |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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| DNA30E2200PA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
на замовлення 294 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.39 грн |
| 5+ | 261.37 грн |
| 10+ | 245.65 грн |
| 25+ | 211.74 грн |
| 50+ | 193.54 грн |
| DNA30E2200FE |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
на замовлення 226 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 612.82 грн |
| 3+ | 521.08 грн |
| 10+ | 426.79 грн |
| 25+ | 419.34 грн |
| IXDI614SITR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
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Мінімальне замовлення: 2000 шт
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| IXFR26N100P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3213.76 грн |
| 3+ | 2685.62 грн |
| IXTP1R6N100D2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 311.76 грн |
| 6+ | 159.63 грн |
| 17+ | 150.53 грн |
| IXTY1R6N100D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 407.06 грн |
| 6+ | 181.14 грн |
| 15+ | 171.21 грн |
| 350+ | 167.08 грн |
| IXTA1R6N100D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
Drain current: 1.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
Drain current: 1.6A
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| IXTA1R6N100D2HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Polarisation: unipolar
Technology: Polar™
Drain current: 1.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Polarisation: unipolar
Technology: Polar™
Drain current: 1.6A
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| CPC1117NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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Мінімальне замовлення: 2000 шт
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| CPC1014NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
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Мінімальне замовлення: 2000 шт
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| IXTY44N10T |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 130W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 60ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 130W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 60ns
на замовлення 421 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 214.67 грн |
| 10+ | 159.63 грн |
| 25+ | 124.07 грн |
| 50+ | 100.08 грн |
| 70+ | 94.29 грн |
| MCC72-08io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| MCC72-08io8B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| DSEI2X121-02A |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Kind of package: tube
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2766.61 грн |
| 5+ | 2394.47 грн |
| 10+ | 2191.01 грн |
| 20+ | 2133.94 грн |
| CPC1130NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CPC1114N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
On-state resistance: 2Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 0.4A
Turn-off time: 5ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
On-state resistance: 2Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 0.4A
Turn-off time: 5ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
на замовлення 648 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 206.65 грн |
| 7+ | 156.32 грн |
| 17+ | 147.22 грн |
| CPC1114NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CS45-16IO1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 372.33 грн |
| 15+ | 326.71 грн |
| CS45-16IO1R |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.6kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.6kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
на замовлення 197 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 713.48 грн |
| 5+ | 515.29 грн |
| 10+ | 429.27 грн |
| 30+ | 387.09 грн |
| CS45-12IO1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Mounting: THT
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Kind of package: tube
Case: TO247AD
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Mounting: THT
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Kind of package: tube
Case: TO247AD
Type of thyristor: standard
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 515.73 грн |
| 5+ | 407.76 грн |
| 10+ | 371.37 грн |
| IXTP100N04T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 273.45 грн |
| 10+ | 101.73 грн |
| 26+ | 95.94 грн |
| IXTP48P05T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
на замовлення 291 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 297.50 грн |
| 10+ | 212.57 грн |
| 50+ | 180.31 грн |
| 100+ | 174.52 грн |
| IXTY48P05T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
товару немає в наявності
В кошику
од. на суму грн.
| IXTA48P05T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
товару немає в наявності
В кошику
од. на суму грн.
| IXTA48P05T-TRL |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IXTY48P05T-TRL |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCD2400MTR |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IXDH20N120 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 557.60 грн |
| 3+ | 352.35 грн |
| 8+ | 333.32 грн |
| CPC1966Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
товару немає в наявності
В кошику
од. на суму грн.
| CPC1966YX6 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
товару немає в наявності
В кошику
од. на суму грн.
| IXFH60N50P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 132 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 807.00 грн |
| 5+ | 659.20 грн |
| 10+ | 607.92 грн |
| 30+ | 530.18 грн |
| 60+ | 526.04 грн |
| CPC1906Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
товару немає в наявності
В кошику
од. на суму грн.
| MIXA10WB1200TED |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 30A
Application: motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 12A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 30A
Application: motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 12A
товару немає в наявності
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| CLB30I1200HB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 325A
Case: TO247AD
Gate current: 50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 325A
Case: TO247AD
Gate current: 50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.39 грн |
| 3+ | 244.82 грн |
| 10+ | 220.01 грн |
| 30+ | 211.74 грн |
| CLB30I1200PZ-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO263ABHV
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: SMD
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO263ABHV
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: SMD
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.37 грн |
| 3+ | 194.37 грн |
| CLB30I1200PZ-TRL |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| LBA110 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 578.08 грн |
| 10+ | 460.70 грн |
| 50+ | 443.33 грн |
| LBA110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 955.75 грн |
| 50+ | 813.05 грн |
| 100+ | 694.77 грн |
| LBA110L |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 741.09 грн |
| 10+ | 608.75 грн |
| 50+ | 538.45 грн |
| CPC1010N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| CPC1010NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CPC1016NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.



































