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IXTH48P20P IXTH48P20P IXYS IXT_48P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Gate-source voltage: ±20V
Power dissipation: 462W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO247-3
Drain current: -48A
на замовлення 280 шт:
термін постачання 14-30 дні (днів)
1+848.81 грн
5+656.12 грн
10+577.05 грн
30+557.70 грн
В кошику  од. на суму  грн.
IXTQ26P20P IXTQ26P20P IXYS IXT_26P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO3P
Drain current: -26A
на замовлення 294 шт:
термін постачання 14-30 дні (днів)
1+526.32 грн
10+373.48 грн
30+319.65 грн
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IXTA26P20P IXTA26P20P IXYS IXT_26P20P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO263
Drain current: -26A
на замовлення 338 шт:
термін постачання 14-30 дні (днів)
1+513.64 грн
5+319.65 грн
В кошику  од. на суму  грн.
IXTR48P20P IXTR48P20P IXYS IXTR48P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 93mΩ
Gate-source voltage: ±20V
Power dissipation: 190W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: ISOPLUS247™
Drain current: -30A
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
1+641.36 грн
3+529.94 грн
10+476.95 грн
30+444.98 грн
В кошику  од. на суму  грн.
IXTH26P20P IXTH26P20P IXYS IXT_26P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO247-3
Drain current: -26A
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IXTA26P20P-TRL IXYS littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 26A; 300W; D2PAK,TO263
Mounting: SMD
On-state resistance: 0.17Ω
Gate-source voltage: 20V
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: D2PAK; TO263
Drain current: 26A
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IXTN90P20P IXTN90P20P IXYS IXTN90P20P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Gate-source voltage: ±30V
Power dissipation: 890W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: PolarP™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -270A
Case: SOT227B
Drain current: -90A
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IXTT48P20P IXTT48P20P IXYS IXT_48P20P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Gate-source voltage: ±20V
Power dissipation: 462W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO268
Drain current: -48A
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CPC1580P IXYS CPC1580.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
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CPC1580PTR IXYS CPC1580.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
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IXFP6N120P IXFP6N120P IXYS IXFA(H,P)6N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
1+656.76 грн
3+570.32 грн
10+501.34 грн
25+447.51 грн
В кошику  од. на суму  грн.
IXFP4N100P IXFP4N100P IXYS IXFA(P)4N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
на замовлення 406 шт:
термін постачання 14-30 дні (днів)
2+264.52 грн
3+221.23 грн
10+195.15 грн
50+176.65 грн
Мінімальне замовлення: 2
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DMA150E1600NA DMA150E1600NA IXYS DMA150E1600NA.pdf Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 3kA
Kind of package: tube
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
1+2420.52 грн
В кошику  од. на суму  грн.
DMA150YC1600NA DMA150YC1600NA IXYS DMA150YC1600NA.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Semiconductor structure: common cathode
Version: module
Electrical mounting: screw
Mechanical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
1+2788.31 грн
3+2240.89 грн
10+2104.62 грн
30+2023.03 грн
В кошику  од. на суму  грн.
DMA150YA1600NA DMA150YA1600NA IXYS DMA150YA1600NA.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Semiconductor structure: common anode
Version: module
Electrical mounting: screw
Mechanical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
1+2796.46 грн
3+2248.46 грн
10+2104.62 грн
30+2026.39 грн
В кошику  од. на суму  грн.
IXFN230N20T IXFN230N20T IXYS IXFN230N20T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 200ns
Semiconductor structure: single transistor
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PBA150 PBA150 IXYS PBA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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PBA150S PBA150S IXYS PBA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
1+552.59 грн
10+432.36 грн
В кошику  од. на суму  грн.
PBA150STR IXYS PBA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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LOC110 LOC110 IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: DIP8
на замовлення 322 шт:
термін постачання 14-30 дні (днів)
3+194.76 грн
10+113.56 грн
50+110.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LOC110S LOC110S IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
4+146.75 грн
10+121.97 грн
50+112.72 грн
Мінімальне замовлення: 4
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LOC110P LOC110P IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
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LOC110PTR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
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LOC110STR LOC110STR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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CPC1135N CPC1135N IXYS CPC1135N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
4+144.04 грн
Мінімальне замовлення: 4
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CPC1135NTR CPC1135NTR IXYS CPC1135N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CS20-22MOF1 CS20-22MOF1 IXYS CS20-22moF1.pdf Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 250mA
Load current: 18A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 200A
Case: ISOPLUS i4-pac™ x024c
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
1+2462.19 грн
3+2227.44 грн
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MCD44-08io8B MCD44-08io8B IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf MCD44-08io8B.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
Threshold on-voltage: 0.85V
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
1+1752.88 грн
3+1476.26 грн
10+1421.59 грн
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MDD44-08N1B IXYS PCN210915_TO240 screw.pdf MDD44-08N1B.pdf PCN210930_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Kind of package: bulk
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MCC44-08io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
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MCC44-08io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
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DSB10I45PM DSB10I45PM IXYS DSB10I45PM.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220FP-2; Ufmax: 0.52V
Case: TO220FP-2
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 10A
Max. forward voltage: 0.52V
Max. forward impulse current: 260A
Max. off-state voltage: 45V
Power dissipation: 30W
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MEK300-06DA MEK300-06DA IXYS PCN241015_Y4-M6 screw.pdf MEx300-06DA.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 304A; Y4-M6; screw
Kind of package: bulk
Electrical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 2.4kA
Semiconductor structure: common cathode; double
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+5299.41 грн
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IXFP24N60X IXFP24N60X IXYS IXFA(H,P,Q)24N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
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IXDN602SIA IXDN602SIA IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 517 шт:
термін постачання 14-30 дні (днів)
5+90.59 грн
10+61.41 грн
25+56.36 грн
50+54.68 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXDN602D2TR IXDN602D2TR IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
4+139.51 грн
10+78.23 грн
25+66.45 грн
50+61.41 грн
100+60.56 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN602SI IXDN602SI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602SIATR IXDN602SIATR IXYS littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602SITR IXYS littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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LAA108P LAA108P IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
на замовлення 456 шт:
термін постачання 14-30 дні (днів)
3+175.74 грн
25+135.43 грн
30+131.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCA712 LCA712 IXYS LCA712.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Turn-off time: 350µs
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+452.94 грн
В кошику  од. на суму  грн.
LAA710 LAA710 IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
1+836.13 грн
10+741.92 грн
50+622.47 грн
В кошику  од. на суму  грн.
LBA716 LBA716 IXYS LBA716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
1+490.99 грн
10+430.68 грн
В кошику  од. на суму  грн.
DPF240X200NA DPF240X200NA IXYS DPF240X200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 1.06V
Electrical mounting: screw
Max. load current: 240A
Mechanical mounting: screw
Max. forward impulse current: 1.2kA
Kind of package: tube
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
1+3220.41 грн
3+2664.85 грн
В кошику  од. на суму  грн.
DSA240X200NA DSA240X200NA IXYS DSA240X200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Max. forward impulse current: 1.6kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: Schottky
Case: SOT227B
Kind of package: tube
Max. forward voltage: 0.87V
Load current: 120A x2
Max. off-state voltage: 200V
Max. load current: 240A
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IXFN520N075T2 IXFN520N075T2 IXYS IXFN520N075T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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MCC312-16io1 MCC312-16io1 IXYS Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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VVZ110-12IO7 IXYS VVZ110_VVZ175.pdf LFPCN250701_PWS-x screw.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
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LDA102S IXYS LDA102.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
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IXFH160N15T2 IXFH160N15T2 IXYS IXFH160N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Drain-source voltage: 150V
Power dissipation: 880W
Case: TO247-3
на замовлення 284 шт:
термін постачання 14-30 дні (днів)
1+584.29 грн
30+440.78 грн
В кошику  од. на суму  грн.
IXBOD2-50R IXYS _Katalog LF_IXYS_WESTCODE_2021.pdf Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5kV; bulk
Mounting: THT
Max. load current: 0.9A
Breakover voltage: 5kV
Technology: 2nd Gen
Case: BOD
Type of thyristor: BOD x4
Kind of package: bulk
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS IXYH75N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS IXYN75N65C3D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
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IXYH75N65C3 IXYH75N65C3 IXYS IXYH75N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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CPC1786J CPC1786J IXYS CPC1786.pdf Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Mounting: THT
Kind of output: MOSFET
Case: i4-pac
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
Max. operating current: 0.8A
On-state resistance: 2Ω
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Relay variant: current source
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
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IXyH100N65C3 IXyH100N65C3 IXYS IXYH100N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
на замовлення 275 шт:
термін постачання 14-30 дні (днів)
1+927.62 грн
5+801.64 грн
10+740.24 грн
30+624.15 грн
В кошику  од. на суму  грн.
IXYN100N65C3H1 IXYN100N65C3H1 IXYS IXYN100N65C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 90A
Type of semiconductor module: IGBT
Pulsed collector current: 420A
Max. off-state voltage: 650V
Mechanical mounting: screw
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IXYN100N65B3D1 IXYN100N65B3D1 IXYS IXYN100N65B3D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 490A
Max. off-state voltage: 650V
Mechanical mounting: screw
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IXFN100N65X2 IXFN100N65X2 IXYS IXFN100N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Gate charge: 183nC
Reverse recovery time: 200ns
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Drain-source voltage: 650V
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IXYX100N65B3D1 IXYX100N65B3D1 IXYS IXYK(X)100N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 830W
Case: PLUS247™
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 460A
Collector-emitter voltage: 650V
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IXTH48P20P IXT_48P20P.pdf
IXTH48P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Gate-source voltage: ±20V
Power dissipation: 462W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO247-3
Drain current: -48A
на замовлення 280 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+848.81 грн
5+656.12 грн
10+577.05 грн
30+557.70 грн
В кошику  од. на суму  грн.
IXTQ26P20P IXT_26P20P.pdf
IXTQ26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO3P
Drain current: -26A
на замовлення 294 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+526.32 грн
10+373.48 грн
30+319.65 грн
В кошику  од. на суму  грн.
IXTA26P20P IXT_26P20P.pdf
IXTA26P20P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO263
Drain current: -26A
на замовлення 338 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+513.64 грн
5+319.65 грн
В кошику  од. на суму  грн.
IXTR48P20P IXTR48P20P.pdf
IXTR48P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 93mΩ
Gate-source voltage: ±20V
Power dissipation: 190W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: ISOPLUS247™
Drain current: -30A
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+641.36 грн
3+529.94 грн
10+476.95 грн
30+444.98 грн
В кошику  од. на суму  грн.
IXTH26P20P IXT_26P20P.pdf
IXTH26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO247-3
Drain current: -26A
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IXTA26P20P-TRL littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 26A; 300W; D2PAK,TO263
Mounting: SMD
On-state resistance: 0.17Ω
Gate-source voltage: 20V
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: D2PAK; TO263
Drain current: 26A
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IXTN90P20P IXTN90P20P.pdf
IXTN90P20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Gate charge: 205nC
Reverse recovery time: 315ns
On-state resistance: 44mΩ
Gate-source voltage: ±30V
Power dissipation: 890W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: PolarP™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -270A
Case: SOT227B
Drain current: -90A
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IXTT48P20P IXT_48P20P.pdf
IXTT48P20P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Gate charge: 103nC
Reverse recovery time: 260ns
On-state resistance: 85mΩ
Gate-source voltage: ±20V
Power dissipation: 462W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO268
Drain current: -48A
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CPC1580P CPC1580.pdf
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
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CPC1580PTR CPC1580.pdf
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
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IXFP6N120P IXFA(H,P)6N120P.pdf
IXFP6N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+656.76 грн
3+570.32 грн
10+501.34 грн
25+447.51 грн
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IXFP4N100P IXFA(P)4N100P.pdf
IXFP4N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
на замовлення 406 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+264.52 грн
3+221.23 грн
10+195.15 грн
50+176.65 грн
Мінімальне замовлення: 2
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DMA150E1600NA DMA150E1600NA.pdf
DMA150E1600NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 3kA
Kind of package: tube
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2420.52 грн
В кошику  од. на суму  грн.
DMA150YC1600NA DMA150YC1600NA.pdf
DMA150YC1600NA
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Semiconductor structure: common cathode
Version: module
Electrical mounting: screw
Mechanical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2788.31 грн
3+2240.89 грн
10+2104.62 грн
30+2023.03 грн
В кошику  од. на суму  грн.
DMA150YA1600NA DMA150YA1600NA.pdf
DMA150YA1600NA
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Semiconductor structure: common anode
Version: module
Electrical mounting: screw
Mechanical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2796.46 грн
3+2248.46 грн
10+2104.62 грн
30+2026.39 грн
В кошику  од. на суму  грн.
IXFN230N20T IXFN230N20T.pdf
IXFN230N20T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 200ns
Semiconductor structure: single transistor
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PBA150 PBA150.pdf
PBA150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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PBA150S PBA150.pdf
PBA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+552.59 грн
10+432.36 грн
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PBA150STR PBA150.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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LOC110 LOC110.pdf
LOC110
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: DIP8
на замовлення 322 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+194.76 грн
10+113.56 грн
50+110.19 грн
Мінімальне замовлення: 3
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LOC110S LOC110.pdf
LOC110S
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+146.75 грн
10+121.97 грн
50+112.72 грн
Мінімальне замовлення: 4
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LOC110P LOC110.pdf
LOC110P
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
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LOC110PTR LOC110.pdf
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
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LOC110STR LOC110.pdf
LOC110STR
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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CPC1135N CPC1135N.pdf
CPC1135N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+144.04 грн
Мінімальне замовлення: 4
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CPC1135NTR CPC1135N.pdf
CPC1135NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CS20-22MOF1 CS20-22moF1.pdf
CS20-22MOF1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 250mA
Load current: 18A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 200A
Case: ISOPLUS i4-pac™ x024c
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2462.19 грн
3+2227.44 грн
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MCD44-08io8B PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf MCD44-08io8B.pdf
MCD44-08io8B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
Threshold on-voltage: 0.85V
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1752.88 грн
3+1476.26 грн
10+1421.59 грн
В кошику  од. на суму  грн.
MDD44-08N1B PCN210915_TO240 screw.pdf MDD44-08N1B.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Kind of package: bulk
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MCC44-08io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
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MCC44-08io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 49A; TO240AA; Ufmax: 1.8V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
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DSB10I45PM DSB10I45PM.pdf
DSB10I45PM
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220FP-2; Ufmax: 0.52V
Case: TO220FP-2
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 10A
Max. forward voltage: 0.52V
Max. forward impulse current: 260A
Max. off-state voltage: 45V
Power dissipation: 30W
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MEK300-06DA PCN241015_Y4-M6 screw.pdf MEx300-06DA.pdf
MEK300-06DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 304A; Y4-M6; screw
Kind of package: bulk
Electrical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
Mechanical mounting: screw
Max. forward voltage: 1.19V
Load current: 304A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 2.4kA
Semiconductor structure: common cathode; double
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+5299.41 грн
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IXFP24N60X IXFA(H,P,Q)24N60X.pdf
IXFP24N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
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IXDN602SIA IXD_602.pdf
IXDN602SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 517 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+90.59 грн
10+61.41 грн
25+56.36 грн
50+54.68 грн
Мінімальне замовлення: 5
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IXDN602D2TR IXD_602.pdf
IXDN602D2TR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+139.51 грн
10+78.23 грн
25+66.45 грн
50+61.41 грн
100+60.56 грн
Мінімальне замовлення: 4
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IXDN602SI IXD_602.pdf
IXDN602SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602SIATR littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096
IXDN602SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602SITR littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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LAA108P LAA108.pdf
LAA108P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
на замовлення 456 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+175.74 грн
25+135.43 грн
30+131.22 грн
Мінімальне замовлення: 3
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LCA712 LCA712.pdf
LCA712
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Turn-off time: 350µs
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+452.94 грн
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LAA710 LAA710.pdf
LAA710
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+836.13 грн
10+741.92 грн
50+622.47 грн
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LBA716 LBA716.pdf
LBA716
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+490.99 грн
10+430.68 грн
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DPF240X200NA DPF240X200NA.pdf
DPF240X200NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 1.06V
Electrical mounting: screw
Max. load current: 240A
Mechanical mounting: screw
Max. forward impulse current: 1.2kA
Kind of package: tube
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+3220.41 грн
3+2664.85 грн
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DSA240X200NA DSA240X200NA.pdf
DSA240X200NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Max. forward impulse current: 1.6kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: Schottky
Case: SOT227B
Kind of package: tube
Max. forward voltage: 0.87V
Load current: 120A x2
Max. off-state voltage: 200V
Max. load current: 240A
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IXFN520N075T2 IXFN520N075T2.pdf
IXFN520N075T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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MCC312-16io1 Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a
MCC312-16io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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VVZ110-12IO7 VVZ110_VVZ175.pdf LFPCN250701_PWS-x screw.pdf
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
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LDA102S LDA102.pdf
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
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IXFH160N15T2 IXFH160N15T2.pdf
IXFH160N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Drain-source voltage: 150V
Power dissipation: 880W
Case: TO247-3
на замовлення 284 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+584.29 грн
30+440.78 грн
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IXBOD2-50R _Katalog LF_IXYS_WESTCODE_2021.pdf
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5kV; bulk
Mounting: THT
Max. load current: 0.9A
Breakover voltage: 5kV
Technology: 2nd Gen
Case: BOD
Type of thyristor: BOD x4
Kind of package: bulk
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IXYH75N65C3H1 IXYH75N65C3H1.pdf
IXYH75N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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IXYN75N65C3D1 IXYN75N65C3D1.pdf
IXYN75N65C3D1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
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IXYH75N65C3 IXYH75N65C3.pdf
IXYH75N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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CPC1786J CPC1786.pdf
CPC1786J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Mounting: THT
Kind of output: MOSFET
Case: i4-pac
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
Max. operating current: 0.8A
On-state resistance: 2Ω
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Relay variant: current source
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
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IXyH100N65C3 IXYH100N65C3.pdf
IXyH100N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
на замовлення 275 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+927.62 грн
5+801.64 грн
10+740.24 грн
30+624.15 грн
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IXYN100N65C3H1 IXYN100N65C3H1.pdf
IXYN100N65C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 90A
Type of semiconductor module: IGBT
Pulsed collector current: 420A
Max. off-state voltage: 650V
Mechanical mounting: screw
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IXYN100N65B3D1 IXYN100N65B3D1.pdf
IXYN100N65B3D1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 490A
Max. off-state voltage: 650V
Mechanical mounting: screw
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IXFN100N65X2 IXFN100N65X2.pdf
IXFN100N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Gate charge: 183nC
Reverse recovery time: 200ns
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Drain-source voltage: 650V
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IXYX100N65B3D1 IXYK(X)100N65B3D1.pdf
IXYX100N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 830W
Case: PLUS247™
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 460A
Collector-emitter voltage: 650V
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