| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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LCA210LS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| LCA220STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC Type of relay: solid state Contacts configuration: SPDT Max. operating current: 120mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 100mA On-state resistance: 20Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
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LCA210L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: THT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| LCA210LSTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
| LCA210STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
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LCA220S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC Type of relay: solid state Contacts configuration: SPDT Max. operating current: 120mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 100mA On-state resistance: 20Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTP8N70X2M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Gate charge: 12nC Reverse recovery time: 200ns Power dissipation: 32W |
на замовлення 288 шт: термін постачання 14-30 дні (днів) |
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IXFP14N85XM | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns Mounting: THT Power dissipation: 38W Gate charge: 30nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 14A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO220FP On-state resistance: 0.55Ω Reverse recovery time: 116ns |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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IXYK120N120C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns |
на замовлення 253 шт: термін постачання 14-30 дні (днів) |
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IXYX120N120B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 800A Mounting: THT Gate charge: 400nC Kind of package: tube Turn-on time: 84ns Turn-off time: 826ns |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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IXYX120N120C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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IXFT120N15P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268 Mounting: SMD Power dissipation: 600W Gate charge: 150nC Polarisation: unipolar Technology: HiPerFET™; PolarHT™ Drain current: 120A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 16mΩ Reverse recovery time: 200ns |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IXFT120N25X3HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO268HV On-state resistance: 12mΩ Mounting: SMD Gate charge: 122nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 140ns Features of semiconductor devices: ultra junction x-class |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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IXDN609SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 258 шт: термін постачання 14-30 дні (днів) |
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IXDN609SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH2N300P3HV | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 3kV Drain current: 2A Power dissipation: 520W Case: TO247HV On-state resistance: 21Ω Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DSA30C60PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.72V Max. forward impulse current: 340A Power dissipation: 85W Kind of package: tube Heatsink thickness: 1.14...1.39mm |
на замовлення 327 шт: термін постачання 14-30 дні (днів) |
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DSI45-16A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W Semiconductor structure: single diode Case: TO247-2 Mounting: THT Type of diode: rectifying Max. forward voltage: 1.23V Load current: 45A Power dissipation: 270W Max. forward impulse current: 0.48kA Max. off-state voltage: 1.6kV Kind of package: tube |
на замовлення 227 шт: термін постачання 14-30 дні (днів) |
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DSI45-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W Semiconductor structure: single diode Case: TO247-2 Mounting: THT Type of diode: rectifying Max. forward voltage: 1.23V Load current: 45A Power dissipation: 270W Max. forward impulse current: 0.48kA Max. off-state voltage: 1.2kV Kind of package: tube |
на замовлення 480 шт: термін постачання 14-30 дні (днів) |
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DSI45-16AR | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™ Semiconductor structure: single diode Case: ISOPLUS247™ Mounting: THT Type of diode: rectifying Max. forward voltage: 1.23V Load current: 45A Power dissipation: 165W Max. forward impulse current: 410A Max. off-state voltage: 1.6kV Kind of package: tube |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
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DSEP15-12CR | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™ Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 15ns Max. forward voltage: 2.67V Max. forward impulse current: 110A Power dissipation: 150W Max. off-state voltage: 1.2kV Load current: 15A Kind of package: tube Case: ISOPLUS247™ Features of semiconductor devices: fast switching Technology: HiPerDynFRED |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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IXGA12N120A3 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Collector current: 12A Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 1.2kV Power dissipation: 100W Gate charge: 20.4nC Technology: GenX3™; PT Type of transistor: IGBT Turn-on time: 202ns Kind of package: tube Turn-off time: 1545ns Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXGA12N120A3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK Collector current: 22A Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 1.2kV Power dissipation: 100W Gate charge: 20.4nC Type of transistor: IGBT Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
| MEK350-02DA | IXYS |
Category: Diode modulesDescription: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Case: Y4-M6 Max. forward voltage: 0.92V Max. off-state voltage: 200V Load current: 356A Max. forward impulse current: 2.4kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IXCP10M45S | IXYS |
Category: Integrated circuits - othersDescription: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: TO220AB Mounting: THT Operating temperature: -55...150°C Operating voltage: 450V DC Power dissipation: 40W Operating current: 2...100mA |
на замовлення 339 шт: термін постачання 14-30 дні (днів) |
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IXCY10M45S | IXYS |
Category: Integrated circuits - othersDescription: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: TO252 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 450V DC Power dissipation: 40W Operating current: 2...100mA |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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IXCY10M45S-TRL | IXYS |
Category: Integrated circuits - othersDescription: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: TO252 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 450V DC Power dissipation: 40W Operating current: 2...100mA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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IXBH42N170 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3 Type of transistor: IGBT Technology: BiMOSFET™; FRED Collector-emitter voltage: 1.7kV Collector current: 42A Power dissipation: 360W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 188nC Kind of package: tube Turn-on time: 224ns Turn-off time: 1.07µs Features of semiconductor devices: high voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFP20N85X | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns Mounting: THT Power dissipation: 540W Gate charge: 63nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 20A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 0.33Ω Reverse recovery time: 190ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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CPC1998J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase Operating temperature: -40...85°C Mounting: THT Relay variant: 1-phase Body dimensions: 20.88x19.91x5.03mm Insulation voltage: 2.5kV Switching method: zero voltage switching Switched voltage: max. 240V AC Case: i4-pac Max. operating current: 5A Control current max.: 150mA Type of relay: solid state |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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CPC1961G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase Operating temperature: -40...85°C Mounting: THT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Case: DIP8 Max. operating current: 250mA Control current max.: 50mA Type of relay: solid state |
на замовлення 206 шт: термін постачання 14-30 дні (днів) |
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CPC1918J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 19.91x26.16x5.03mm Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 25ms Switched voltage: max. 100V AC; max. 100V DC Case: ISOPLUS264™ Max. operating current: 5250mA Turn-off time: 10ms Control current max.: 100mA On-state resistance: 0.1Ω Type of relay: solid state Mounting: THT Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1983Y | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 5ms Switched voltage: max. 600V DC Case: SIP4 Max. operating current: 0.5A Turn-off time: 2ms Control current max.: 50mA On-state resistance: 6Ω Type of relay: solid state Mounting: THT Relay variant: current source Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1978J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 800V AC; max. 800V DC Case: i4-pac Max. operating current: 750mA Turn-off time: 5ms Control current max.: 100mA On-state resistance: 2.3Ω Type of relay: solid state Mounting: THT Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1984Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Contacts configuration: SPST-NO Insulation voltage: 4kV Turn-on time: 10ms Switched voltage: max. 600V AC; max. 600V DC Case: SIP4 Max. operating current: 1A Turn-off time: 2ms Control current max.: 50mA On-state resistance: 0.66Ω Type of relay: solid state Mounting: THT Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||
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CPC1977J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 600V AC; max. 600V DC Case: i4-pac Max. operating current: 1.25A Turn-off time: 5ms Control current max.: 100mA On-state resistance: 1Ω Type of relay: solid state Mounting: THT Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1979J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 19.91x26.16x5.03mm Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 25ms Switched voltage: max. 600V AC; max. 600V DC Case: ISOPLUS264™ Max. operating current: 1.4A Turn-off time: 5ms Control current max.: 100mA On-state resistance: 0.75Ω Type of relay: solid state Mounting: THT Relay variant: 1-phase; current source Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFH140N20X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 90ns Technology: HiPerFET™; X3-Class |
на замовлення 63 шт: термін постачання 14-30 дні (днів) |
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IXFN140N20P | IXYS |
Category: Transistor modulesDescription: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A Polarisation: unipolar Drain-source voltage: 200V Drain current: 115A Pulsed drain current: 280A Power dissipation: 680W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 18mΩ Gate charge: 240nC Kind of channel: enhancement Reverse recovery time: 150ns Type of semiconductor module: MOSFET transistor Technology: HiPerFET™; Polar™ Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFR140N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 22mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FBE22-06N1 | IXYS |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 22A Max. forward impulse current: 50A Case: ISOPLUS i4-pac™ x024a Electrical mounting: THT Kind of package: tube |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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VUE22-06NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 34A Max. forward impulse current: 50A Version: module Case: ECO-PAC 1 Electrical mounting: THT Max. forward voltage: 2.09V Technology: FRED Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| CMA40E1600HR | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube Case: ISO247™ Mounting: THT Kind of package: tube Type of thyristor: thyristor Gate current: 50/80mA Max. forward impulse current: 470A Load current: 40A Max. off-state voltage: 1.6kV Max. load current: 63A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MCMA400PD1600P-PC | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 400A; screw Type of semiconductor module: diode-thyristor Mechanical mounting: screw Load current: 400A Max. off-state voltage: 1.6kV |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | |||||||||||
| MCMA400PD1600PTSF | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Case: SimBus F Electrical mounting: Press-Fit; screw Max. load current: 630A Max. forward impulse current: 10kA Load current: 400A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
CPC3902ZTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.4A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DPG60C400QB | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W Mounting: THT Case: TO3P Kind of package: tube Technology: HiPerFRED™ 2nd Gen Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Type of diode: rectifying Reverse recovery time: 45ns Max. forward voltage: 1.41V Max. forward impulse current: 360A Load current: 30A x2 Power dissipation: 160W Max. off-state voltage: 0.4kV |
на замовлення 97 шт: термін постачання 14-30 дні (днів) |
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MEA75-12DA | IXYS |
Category: Diode modulesDescription: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw Type of semiconductor module: diode Semiconductor structure: common anode; double Max. off-state voltage: 1.2kV Load current: 75A Case: TO240AA Max. forward voltage: 1.85V Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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| MEE75-12DA | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Case: TO240AA Kind of package: bulk Mechanical mounting: screw Max. forward voltage: 1.85V Load current: 75A Max. forward impulse current: 1.2kA Max. off-state voltage: 1.2kV Semiconductor structure: double series Type of semiconductor module: diode Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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VUO52-16NO1 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 350A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 0.83V Leads: connectors Leads dimensions: 2x0.5mm Case: V1-A-Pack Mechanical mounting: screw |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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IXFR140N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™ Mounting: THT Gate charge: 185nC On-state resistance: 28mΩ Polarisation: unipolar Kind of package: tube Drain current: 70A Type of transistor: N-MOSFET Case: ISOPLUS247™ Drain-source voltage: 300V Power dissipation: 300W Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFX140N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™ Mounting: THT Gate charge: 185nC On-state resistance: 24mΩ Polarisation: unipolar Kind of package: tube Drain current: 140A Type of transistor: N-MOSFET Case: PLUS247™ Drain-source voltage: 300V Power dissipation: 1.04kW Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DPT15I600PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns Mounting: THT Case: TO220-2 Kind of package: tube Reverse recovery time: 28ns Load current: 15A Max. forward impulse current: 150A Max. off-state voltage: 0.6kV Technology: FRED Type of diode: rectifying Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
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VUO86-16NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 86A Max. forward impulse current: 0.55kA Electrical mounting: THT Version: module Max. forward voltage: 1.51V Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VUO36-16NO8 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 27A Max. forward impulse current: 0.55kA Electrical mounting: THT Version: square Max. forward voltage: 1.05V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: FO-B |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| MIXG300PF1700TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 315A Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MDD255-12N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 1.2kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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MDD255-16N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 1.6kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MDD255-22N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 2.2kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MDD255-20N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 2kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. |
| LCA210LS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| LCA220STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LCA210L |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| LCA210LSTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LCA210STR |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LCA220S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| IXTP8N70X2M |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
Power dissipation: 32W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
Power dissipation: 32W
на замовлення 288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 161.68 грн |
| 10+ | 144.75 грн |
| 30+ | 142.21 грн |
| IXFP14N85XM |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Mounting: THT
Power dissipation: 38W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Mounting: THT
Power dissipation: 38W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 382.88 грн |
| 3+ | 319.98 грн |
| 10+ | 282.73 грн |
| IXYK120N120C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 253 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1952.71 грн |
| 3+ | 1752.28 грн |
| 5+ | 1683.71 грн |
| 10+ | 1622.76 грн |
| 25+ | 1596.52 грн |
| IXYX120N120B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2567.14 грн |
| 3+ | 2146.75 грн |
| 10+ | 1896.19 грн |
| IXYX120N120C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2480.54 грн |
| 3+ | 2164.53 грн |
| IXFT120N15P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 16mΩ
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 16mΩ
Reverse recovery time: 200ns
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 799.50 грн |
| 10+ | 612.03 грн |
| 30+ | 480.82 грн |
| IXFT120N25X3HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 944.45 грн |
| IXDN609SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 258 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 220.61 грн |
| 10+ | 149.83 грн |
| 25+ | 139.67 грн |
| 50+ | 132.90 грн |
| 100+ | 126.13 грн |
| IXDN609SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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| IXTH2N300P3HV |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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| DSA30C60PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 327 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 87.19 грн |
| 10+ | 77.03 грн |
| 50+ | 69.41 грн |
| DSI45-16A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 341.86 грн |
| 5+ | 260.73 грн |
| 10+ | 228.56 грн |
| 30+ | 215.01 грн |
| DSI45-12A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 302.66 грн |
| 10+ | 219.25 грн |
| 30+ | 197.24 грн |
| DSI45-16AR |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Semiconductor structure: single diode
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 410A
Max. off-state voltage: 1.6kV
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Semiconductor structure: single diode
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 410A
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 355.53 грн |
| DSEP15-12CR |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 715.63 грн |
| IXGA12N120A3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 20.4nC
Technology: GenX3™; PT
Type of transistor: IGBT
Turn-on time: 202ns
Kind of package: tube
Turn-off time: 1545ns
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 20.4nC
Technology: GenX3™; PT
Type of transistor: IGBT
Turn-on time: 202ns
Kind of package: tube
Turn-off time: 1545ns
Mounting: SMD
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| IXGA12N120A3-TRL |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK
Collector current: 22A
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 20.4nC
Type of transistor: IGBT
Kind of package: reel; tape
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK
Collector current: 22A
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 20.4nC
Type of transistor: IGBT
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MEK350-02DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
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од. на суму грн.
| IXCP10M45S |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 339 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 194.18 грн |
| 10+ | 145.60 грн |
| IXCY10M45S |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 237.02 грн |
| 10+ | 165.07 грн |
| IXCY10M45S-TRL |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| IXBH42N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
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| IXFP20N85X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
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| CPC1998J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 20.88x19.91x5.03mm
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 20.88x19.91x5.03mm
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
Type of relay: solid state
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1442.20 грн |
| 10+ | 1250.30 грн |
| CPC1961G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP8
Max. operating current: 250mA
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP8
Max. operating current: 250mA
Control current max.: 50mA
Type of relay: solid state
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 421.17 грн |
| 50+ | 255.65 грн |
| CPC1918J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 100V AC; max. 100V DC
Case: ISOPLUS264™
Max. operating current: 5250mA
Turn-off time: 10ms
Control current max.: 100mA
On-state resistance: 0.1Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 100V AC; max. 100V DC
Case: ISOPLUS264™
Max. operating current: 5250mA
Turn-off time: 10ms
Control current max.: 100mA
On-state resistance: 0.1Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
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| CPC1983Y |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 600V DC
Case: SIP4
Max. operating current: 0.5A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 6Ω
Type of relay: solid state
Mounting: THT
Relay variant: current source
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 600V DC
Case: SIP4
Max. operating current: 0.5A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 6Ω
Type of relay: solid state
Mounting: THT
Relay variant: current source
Kind of output: MOSFET
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| CPC1978J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 800V AC; max. 800V DC
Case: i4-pac
Max. operating current: 750mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2.3Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 800V AC; max. 800V DC
Case: i4-pac
Max. operating current: 750mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2.3Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
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| CPC1984Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 4kV
Turn-on time: 10ms
Switched voltage: max. 600V AC; max. 600V DC
Case: SIP4
Max. operating current: 1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.66Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 4kV
Turn-on time: 10ms
Switched voltage: max. 600V AC; max. 600V DC
Case: SIP4
Max. operating current: 1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.66Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 100 шт
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| CPC1977J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 600V AC; max. 600V DC
Case: i4-pac
Max. operating current: 1.25A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 1Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 600V AC; max. 600V DC
Case: i4-pac
Max. operating current: 1.25A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 1Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
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| CPC1979J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 600V AC; max. 600V DC
Case: ISOPLUS264™
Max. operating current: 1.4A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.75Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 600V AC; max. 600V DC
Case: ISOPLUS264™
Max. operating current: 1.4A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.75Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
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| IXFH140N20X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 967.24 грн |
| 10+ | 661.13 грн |
| IXFN140N20P |
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Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Category: Transistor modules
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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| IXFR140N20P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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| FBE22-06N1 |
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Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Kind of package: tube
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Kind of package: tube
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1001.88 грн |
| 25+ | 774.56 грн |
| VUE22-06NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Max. forward voltage: 2.09V
Technology: FRED
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Max. forward voltage: 2.09V
Technology: FRED
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1534.27 грн |
| CMA40E1600HR |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
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| MCMA400PD1600P-PC |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; screw
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Load current: 400A
Max. off-state voltage: 1.6kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; screw
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Load current: 400A
Max. off-state voltage: 1.6kV
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Мінімальне замовлення: 24 шт
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| MCMA400PD1600PTSF |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 630A
Max. forward impulse current: 10kA
Load current: 400A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 630A
Max. forward impulse current: 10kA
Load current: 400A
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| CPC3902ZTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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| DPG60C400QB |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Case: TO3P
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Max. forward voltage: 1.41V
Max. forward impulse current: 360A
Load current: 30A x2
Power dissipation: 160W
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Case: TO3P
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Max. forward voltage: 1.41V
Max. forward impulse current: 360A
Load current: 30A x2
Power dissipation: 160W
Max. off-state voltage: 0.4kV
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.63 грн |
| 10+ | 377.54 грн |
| 30+ | 354.69 грн |
| MEA75-12DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw
Type of semiconductor module: diode
Semiconductor structure: common anode; double
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw
Type of semiconductor module: diode
Semiconductor structure: common anode; double
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2617.28 грн |
| 10+ | 1897.03 грн |
| 36+ | 1870.79 грн |
| MEE75-12DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
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| VUO52-16NO1 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2663.78 грн |
| 2+ | 2387.16 грн |
| 5+ | 2287.27 грн |
| 10+ | 2123.90 грн |
| IXFR140N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 28mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 70A
Type of transistor: N-MOSFET
Case: ISOPLUS247™
Drain-source voltage: 300V
Power dissipation: 300W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 28mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 70A
Type of transistor: N-MOSFET
Case: ISOPLUS247™
Drain-source voltage: 300V
Power dissipation: 300W
Kind of channel: enhancement
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| IXFX140N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 140A
Type of transistor: N-MOSFET
Case: PLUS247™
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 140A
Type of transistor: N-MOSFET
Case: PLUS247™
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of channel: enhancement
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| DPT15I600PA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns
Mounting: THT
Case: TO220-2
Kind of package: tube
Reverse recovery time: 28ns
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Technology: FRED
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns
Mounting: THT
Case: TO220-2
Kind of package: tube
Reverse recovery time: 28ns
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Technology: FRED
Type of diode: rectifying
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| VUO86-16NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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| VUO36-16NO8 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1138.62 грн |
| MIXG300PF1700TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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| MDD255-12N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11792.82 грн |
| 3+ | 9907.57 грн |
| 6+ | 9684.09 грн |
| MDD255-16N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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| MDD255-22N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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| MDD255-20N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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