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CPC1705Y CPC1705Y IXYS CPC1705y.pdf Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 2ms
Turn-off time: 12ms
Control current max.: 50mA
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PLA171P PLA171P IXYS PLA171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
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PLB171P PLB171P IXYS PLB171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
1+826.43 грн
10+612.94 грн
В кошику  од. на суму  грн.
PLA134 PLA134 IXYS PLA134.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
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CPC1981Y CPC1981Y IXYS CPC1981.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Control current max.: 50mA
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IXBF42N300 IXBF42N300 IXYS IXBF42N300.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
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LCA210LS LCA210LS IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LCA220STR IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LCA210L LCA210L IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LCA210LSTR IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LCA210STR IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LCA220S LCA220S IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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IXTP8N70X2M IXTP8N70X2M IXYS IXTP8N70X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 283 шт:
термін постачання 14-30 дні (днів)
3+156.93 грн
10+140.50 грн
30+138.03 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXFP14N85XM IXFP14N85XM IXYS IXFP14N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Features of semiconductor devices: ultra junction x-class
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
2+371.63 грн
3+310.58 грн
10+274.42 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXYK120N120C3 IXYK120N120C3 IXYS IXYK(x)120N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 253 шт:
термін постачання 14-30 дні (днів)
1+1836.03 грн
2+1612.04 грн
В кошику  од. на суму  грн.
IXYX120N120B3 IXYX120N120B3 IXYS IXYX120N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+1979.37 грн
2+1738.57 грн
3+1737.75 грн
В кошику  од. на суму  грн.
IXYX120N120C3 IXYX120N120C3 IXYS IXYK(x)120N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
1+2189.07 грн
2+1921.79 грн
В кошику  од. на суму  грн.
IXFT120N15P IXFT120N15P IXYS IXF_120N15P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 16mΩ
Reverse recovery time: 200ns
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+776.00 грн
10+594.04 грн
30+466.69 грн
В кошику  од. на суму  грн.
IXFT120N25X3HV IXFT120N25X3HV IXYS IXFH(T,Q)120N25X3_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
1+916.69 грн
В кошику  од. на суму  грн.
IXDN609SI IXDN609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 258 шт:
термін постачання 14-30 дні (днів)
3+214.13 грн
10+145.43 грн
25+135.57 грн
50+129.00 грн
100+122.42 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXDN609SIA IXDN609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXTH2N300P3HV IXTH2N300P3HV IXYS IXTH(T)2N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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DSA30C60PB DSA30C60PB IXYS DSA30C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 327 шт:
термін постачання 14-30 дні (днів)
5+84.63 грн
10+74.77 грн
50+67.37 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
DSI45-16A DSI45-16A IXYS DSI45-16A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
2+331.81 грн
5+253.06 грн
10+221.84 грн
30+208.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSI45-12A DSI45-12A IXYS DSI45-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
2+293.76 грн
10+212.80 грн
30+191.44 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSI45-16AR DSI45-16AR IXYS DSI45-16AR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; Ifsm: 410A; ISOPLUS247™; tube
Mounting: THT
Max. forward impulse current: 410A
Max. forward voltage: 1.23V
Power dissipation: 165W
Max. off-state voltage: 1.6kV
Load current: 45A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS247™
Type of diode: rectifying
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
2+345.08 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP15-12CR DSEP15-12CR IXYS DSEP15-12CR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
1+694.59 грн
В кошику  од. на суму  грн.
IXGA12N120A3 IXGA12N120A3 IXYS IXGA(p,h)12N120A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Technology: GenX3™; PT
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 20.4nC
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MEK350-02DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
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IXCP10M45S IXCP10M45S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 222 шт:
термін постачання 14-30 дні (днів)
2+244.21 грн
6+170.90 грн
10+170.08 грн
16+161.04 грн
100+155.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXCY10M45S IXCY10M45S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
2+230.06 грн
10+160.22 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXCY10M45S-TRL IXCY10M45S-TRL IXYS 98704.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IXBH42N170 IXBH42N170 IXYS IXBH42N170_IXBT42N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 1.07µs
Gate-emitter voltage: ±20V
Collector current: 42A
Collector-emitter voltage: 1.7kV
Power dissipation: 360W
Gate charge: 188nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 300A
Type of transistor: IGBT
Turn-on time: 224ns
Kind of package: tube
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IXFP20N85X IXFP20N85X IXYS IXFH(P)20N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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CPC1998J CPC1998J IXYS cpc1998.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 20.88x19.91x5.03mm
Operating temperature: -40...85°C
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
1+1399.80 грн
10+1213.55 грн
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CPC1961G CPC1961G IXYS CPC1961.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP8
Max. operating current: 250mA
Control current max.: 50mA
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
2+408.79 грн
50+248.13 грн
Мінімальне замовлення: 2 шт
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CPC1918J CPC1918J IXYS CPC1918.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 100V AC; max. 100V DC
Case: ISOPLUS264™
Max. operating current: 5250mA
Turn-off time: 10ms
Control current max.: 100mA
On-state resistance: 0.1Ω
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CPC1983Y CPC1983Y IXYS CPC1983.pdf Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 600V DC
Case: SIP4
Max. operating current: 0.5A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 6Ω
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CPC1978J CPC1978J IXYS CPC1978.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 800V AC; max. 800V DC
Case: i4-pac
Max. operating current: 750mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2.3Ω
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CPC1984Y CPC1984Y IXYS CPC1984Y.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.66Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Turn-on time: 10ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
CPC1977J CPC1977J IXYS CPC1977.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 600V AC; max. 600V DC
Case: i4-pac
Max. operating current: 1.25A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 1Ω
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CPC1979J CPC1979J IXYS CPC1979.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 600V AC; max. 600V DC
Case: ISOPLUS264™
Max. operating current: 1.4A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.75Ω
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IXFH140N20X3 IXFH140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
1+982.16 грн
2+706.60 грн
4+667.98 грн
10+641.69 грн
В кошику  од. на суму  грн.
IXFN140N20P IXFN140N20P IXYS IXFN140N20P.pdf description Category: Transistor modules
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXFR140N20P IXFR140N20P IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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FBE22-06N1 FBE22-06N1 IXYS FBE22-06N1.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Kind of package: tube
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
1+972.43 грн
25+751.79 грн
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VUE22-06NO7 VUE22-06NO7 IXYS VUE22-06NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Max. forward voltage: 2.09V
Technology: FRED
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1489.17 грн
В кошику  од. на суму  грн.
CMA40E1600HR IXYS CMA40E1600HR.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
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MCMA400PD1600P-PC IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; screw
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Load current: 400A
Max. off-state voltage: 1.6kV
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 Мінімальне замовлення: 24 шт
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MCMA400PD1600PTSF IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 630A
Max. forward impulse current: 10kA
Load current: 400A
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CPC3902ZTR CPC3902ZTR IXYS CPC3902.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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DPG60C400QB DPG60C400QB IXYS Littelfuse-Power-Semiconductors-DPG60C400QB-Datasheet?assetguid=3C71B727-26DC-4961-AA47-E6824A25148C Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Case: TO3P
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Max. forward voltage: 1.41V
Max. forward impulse current: 360A
Load current: 30A x2
Power dissipation: 160W
Max. off-state voltage: 0.4kV
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
1+474.27 грн
10+366.45 грн
30+344.26 грн
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MEA75-12DA MEA75-12DA IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: common anode; double
Case: TO240AA
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.85V
Type of semiconductor module: diode
Mechanical mounting: screw
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
1+2540.35 грн
10+1841.27 грн
36+1815.80 грн
В кошику  од. на суму  грн.
MEE75-12DA IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
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VUO52-16NO1 VUO52-16NO1 IXYS VUO52-16NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Case: V1-A-Pack
Type of bridge rectifier: three-phase
Max. forward impulse current: 350A
Max. forward voltage: 0.83V
Version: module
Mechanical mounting: screw
Leads: connectors
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors
Load current: 60A
Leads dimensions: 2x0.5mm
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+2277.56 грн
2+1999.85 грн
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IXFR140N30P IXFR140N30P IXYS IXFR140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 28mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 70A
Type of transistor: N-MOSFET
Case: ISOPLUS247™
Drain-source voltage: 300V
Power dissipation: 300W
Kind of channel: enhancement
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IXFX140N30P IXFX140N30P IXYS IXFK140N30P_IXFX140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
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DPT15I600PA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns
Mounting: THT
Case: TO220-2
Kind of package: tube
Reverse recovery time: 28ns
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Technology: FRED
Type of diode: rectifying
Semiconductor structure: single diode
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 Мінімальне замовлення: 1000 шт
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VUO86-16NO7 VUO86-16NO7 IXYS VUO86-16NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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VUO36-16NO8 VUO36-16NO8 IXYS VUO36.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1105.15 грн
В кошику  од. на суму  грн.
CPC1705Y CPC1705y.pdf
CPC1705Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 2ms
Turn-off time: 12ms
Control current max.: 50mA
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PLA171P PLA171.pdf
PLA171P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
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PLB171P PLB171.pdf
PLB171P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+826.43 грн
10+612.94 грн
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PLA134 PLA134.pdf
PLA134
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
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CPC1981Y CPC1981.pdf
CPC1981Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Control current max.: 50mA
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IXBF42N300 IXBF42N300.pdf
IXBF42N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
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LCA210LS LCA210L.pdf
LCA210LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LCA220STR LCA220.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA210L LCA210L.pdf
LCA210L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LCA210LSTR LCA210L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA210STR LCA210L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA220S LCA220.pdf
LCA220S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
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IXTP8N70X2M IXTP8N70X2M.pdf
IXTP8N70X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 283 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+156.93 грн
10+140.50 грн
30+138.03 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXFP14N85XM IXFP14N85XM.pdf
IXFP14N85XM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Features of semiconductor devices: ultra junction x-class
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+371.63 грн
3+310.58 грн
10+274.42 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXYK120N120C3 IXYK(x)120N120C3.pdf
IXYK120N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 253 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1836.03 грн
2+1612.04 грн
В кошику  од. на суму  грн.
IXYX120N120B3 IXYX120N120B3.pdf
IXYX120N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1979.37 грн
2+1738.57 грн
3+1737.75 грн
В кошику  од. на суму  грн.
IXYX120N120C3 IXYK(x)120N120C3.pdf
IXYX120N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2189.07 грн
2+1921.79 грн
В кошику  од. на суму  грн.
IXFT120N15P IXF_120N15P.pdf
IXFT120N15P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 16mΩ
Reverse recovery time: 200ns
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+776.00 грн
10+594.04 грн
30+466.69 грн
В кошику  од. на суму  грн.
IXFT120N25X3HV IXFH(T,Q)120N25X3_HV.pdf
IXFT120N25X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+916.69 грн
В кошику  од. на суму  грн.
IXDN609SI IXDD609CI.pdf
IXDN609SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 258 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+214.13 грн
10+145.43 грн
25+135.57 грн
50+129.00 грн
100+122.42 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXDN609SIA IXDD609CI.pdf
IXDN609SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXTH2N300P3HV IXTH(T)2N300P3HV.pdf
IXTH2N300P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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В кошику  од. на суму  грн.
DSA30C60PB DSA30C60PB.pdf
DSA30C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 327 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+84.63 грн
10+74.77 грн
50+67.37 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
DSI45-16A DSI45-16A.pdf
DSI45-16A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+331.81 грн
5+253.06 грн
10+221.84 грн
30+208.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSI45-12A DSI45-12A.pdf
DSI45-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+293.76 грн
10+212.80 грн
30+191.44 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSI45-16AR DSI45-16AR.pdf
DSI45-16AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; Ifsm: 410A; ISOPLUS247™; tube
Mounting: THT
Max. forward impulse current: 410A
Max. forward voltage: 1.23V
Power dissipation: 165W
Max. off-state voltage: 1.6kV
Load current: 45A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS247™
Type of diode: rectifying
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+345.08 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP15-12CR DSEP15-12CR.pdf
DSEP15-12CR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+694.59 грн
В кошику  од. на суму  грн.
IXGA12N120A3 IXGA(p,h)12N120A3.pdf
IXGA12N120A3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Technology: GenX3™; PT
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 20.4nC
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В кошику  од. на суму  грн.
MEK350-02DA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
товару немає в наявності
В кошику  од. на суму  грн.
IXCP10M45S IXCP10M90S.pdf
IXCP10M45S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 222 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+244.21 грн
6+170.90 грн
10+170.08 грн
16+161.04 грн
100+155.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXCY10M45S IXCP10M90S.pdf
IXCY10M45S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+230.06 грн
10+160.22 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXCY10M45S-TRL 98704.pdf
IXCY10M45S-TRL
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXBH42N170 IXBH42N170_IXBT42N170.pdf
IXBH42N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 1.07µs
Gate-emitter voltage: ±20V
Collector current: 42A
Collector-emitter voltage: 1.7kV
Power dissipation: 360W
Gate charge: 188nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 300A
Type of transistor: IGBT
Turn-on time: 224ns
Kind of package: tube
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IXFP20N85X IXFH(P)20N85X.pdf
IXFP20N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
CPC1998J cpc1998.pdf
CPC1998J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 20.88x19.91x5.03mm
Operating temperature: -40...85°C
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1399.80 грн
10+1213.55 грн
В кошику  од. на суму  грн.
CPC1961G CPC1961.pdf
CPC1961G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP8
Max. operating current: 250mA
Control current max.: 50mA
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+408.79 грн
50+248.13 грн
Мінімальне замовлення: 2 шт
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CPC1918J CPC1918.pdf
CPC1918J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 100V AC; max. 100V DC
Case: ISOPLUS264™
Max. operating current: 5250mA
Turn-off time: 10ms
Control current max.: 100mA
On-state resistance: 0.1Ω
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CPC1983Y CPC1983.pdf
CPC1983Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 600V DC
Case: SIP4
Max. operating current: 0.5A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 6Ω
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CPC1978J CPC1978.pdf
CPC1978J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 800V AC; max. 800V DC
Case: i4-pac
Max. operating current: 750mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2.3Ω
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CPC1984Y CPC1984Y.pdf
CPC1984Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.66Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Turn-on time: 10ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 100 шт
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CPC1977J CPC1977.pdf
CPC1977J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 600V AC; max. 600V DC
Case: i4-pac
Max. operating current: 1.25A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 1Ω
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CPC1979J CPC1979.pdf
CPC1979J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 600V AC; max. 600V DC
Case: ISOPLUS264™
Max. operating current: 1.4A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.75Ω
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IXFH140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFH140N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+982.16 грн
2+706.60 грн
4+667.98 грн
10+641.69 грн
В кошику  од. на суму  грн.
IXFN140N20P description IXFN140N20P.pdf
IXFN140N20P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXFR140N20P IXFR140N20P.pdf
IXFR140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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FBE22-06N1 FBE22-06N1.pdf
FBE22-06N1
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Kind of package: tube
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+972.43 грн
25+751.79 грн
В кошику  од. на суму  грн.
VUE22-06NO7 VUE22-06NO7.pdf
VUE22-06NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Max. forward voltage: 2.09V
Technology: FRED
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1489.17 грн
В кошику  од. на суму  грн.
CMA40E1600HR CMA40E1600HR.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
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MCMA400PD1600P-PC
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; screw
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Load current: 400A
Max. off-state voltage: 1.6kV
товару немає в наявності
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
MCMA400PD1600PTSF
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 630A
Max. forward impulse current: 10kA
Load current: 400A
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CPC3902ZTR CPC3902.pdf
CPC3902ZTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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DPG60C400QB Littelfuse-Power-Semiconductors-DPG60C400QB-Datasheet?assetguid=3C71B727-26DC-4961-AA47-E6824A25148C
DPG60C400QB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Case: TO3P
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Max. forward voltage: 1.41V
Max. forward impulse current: 360A
Load current: 30A x2
Power dissipation: 160W
Max. off-state voltage: 0.4kV
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+474.27 грн
10+366.45 грн
30+344.26 грн
В кошику  од. на суму  грн.
MEA75-12DA PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf
MEA75-12DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: common anode; double
Case: TO240AA
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.85V
Type of semiconductor module: diode
Mechanical mounting: screw
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2540.35 грн
10+1841.27 грн
36+1815.80 грн
В кошику  од. на суму  грн.
MEE75-12DA PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
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VUO52-16NO1 VUO52-16NO1.pdf
VUO52-16NO1
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Case: V1-A-Pack
Type of bridge rectifier: three-phase
Max. forward impulse current: 350A
Max. forward voltage: 0.83V
Version: module
Mechanical mounting: screw
Leads: connectors
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors
Load current: 60A
Leads dimensions: 2x0.5mm
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2277.56 грн
2+1999.85 грн
В кошику  од. на суму  грн.
IXFR140N30P IXFR140N30P.pdf
IXFR140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 28mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 70A
Type of transistor: N-MOSFET
Case: ISOPLUS247™
Drain-source voltage: 300V
Power dissipation: 300W
Kind of channel: enhancement
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IXFX140N30P IXFK140N30P_IXFX140N30P.pdf
IXFX140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
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DPT15I600PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns
Mounting: THT
Case: TO220-2
Kind of package: tube
Reverse recovery time: 28ns
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Technology: FRED
Type of diode: rectifying
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 1000 шт
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VUO86-16NO7 VUO86-16NO7.pdf
VUO86-16NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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VUO36-16NO8 VUO36.pdf
VUO36-16NO8
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1105.15 грн
В кошику  од. на суму  грн.