| Фото | Назва | Виробник | Інформація |
Доступність |
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| MCD162-14io1 | IXYS |
 Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 300A Threshold on-voltage: 0.88V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD162-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 300A Threshold on-voltage: 0.88V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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IXTH200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns Case: TO247-3 Mounting: THT On-state resistance: 5.5mΩ Kind of package: tube Power dissipation: 550W Drain current: 200A Features of semiconductor devices: thrench gate power mosfet Gate charge: 152nC Drain-source voltage: 100V Reverse recovery time: 76ns Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXTP200N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO220AB; 49ns Case: TO220AB Mounting: THT On-state resistance: 4.2mΩ Kind of package: tube Power dissipation: 360W Drain current: 200A Features of semiconductor devices: thrench gate power mosfet Gate charge: 109nC Drain-source voltage: 55V Reverse recovery time: 49ns Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IXTN200N10T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A Technology: TrenchMV™ Case: SOT227B On-state resistance: 5.5mΩ Power dissipation: 550W Drain current: 200A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 152nC Drain-source voltage: 100V Reverse recovery time: 76ns Kind of channel: enhanced Gate-source voltage: ±30V Semiconductor structure: single transistor Pulsed drain current: 500A Polarisation: unipolar |
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IXXX300N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1.14kA Turn-on time: 137ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 460nC Collector-emitter voltage: 600V |
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IXXX300N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1075A Turn-on time: 128ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 438nC Collector-emitter voltage: 600V |
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DPG80C400HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W Kind of package: tube Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Mounting: THT Case: TO247-3 Max. off-state voltage: 0.4kV Max. forward voltage: 1.43V Load current: 40A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 0.4kA Power dissipation: 215W |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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CLB30I1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube Mounting: THT Load current: 30A Gate current: 50mA Max. forward impulse current: 325A Kind of package: tube Type of thyristor: thyristor Case: TO247AD Max. off-state voltage: 1.2kV Max. load current: 47A |
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CLB30I1200PZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube Mounting: SMD Load current: 30A Gate current: 30/50mA Max. forward impulse current: 255A Kind of package: tube Type of thyristor: thyristor Case: TO263ABHV Max. off-state voltage: 1.2kV Max. load current: 47A |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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IXFH170N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 170A Power dissipation: 890W Case: TO247-3 On-state resistance: 7.4mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IXTR102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Power dissipation: 330W Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 54A On-state resistance: 33mΩ Type of transistor: N-MOSFET |
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IXTX102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns Case: PLUS247™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 102A On-state resistance: 30mΩ |
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DPF60C300HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3 Kind of package: tube Max. forward impulse current: 0.4kA Max. off-state voltage: 300V Max. forward voltage: 0.97V Load current: 30A x2 Semiconductor structure: common cathode; double Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: TO247-3 |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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DPF60IM400HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 60A; tube; Ifsm: 600A; TO247-2; 275W Kind of package: tube Max. forward impulse current: 600A Max. off-state voltage: 0.4kV Max. forward voltage: 1.27V Load current: 60A Semiconductor structure: single diode Reverse recovery time: 60ns Power dissipation: 275W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: TO247-2 |
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| IXBOD2-13 | IXYS |
Category: Thyristors - others Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 1.3kV |
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CLA40E1200HR | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 63A Load current: 40A Gate current: 50/80mA Case: ISO247™ Mounting: THT Kind of package: tube Max. forward impulse current: 555A |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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| MCK200-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double,common cathode; 1.8kV; 216Ax2; Y4-M6 Mechanical mounting: screw Semiconductor structure: common cathode; double Gate current: 150/220mA Max. forward impulse current: 8kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Type of module: thyristor Case: Y4-M6 Max. off-state voltage: 1.8kV Max. load current: 340A Max. forward voltage: 1.52V Load current: 216A x2 |
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IXTP15P15T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -15A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 0.24Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 116ns |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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IXBX25N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™ Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 2.5kV Collector current: 25A Power dissipation: 300W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 103nC Kind of package: tube Turn-on time: 694ns Turn-off time: 650ns Features of semiconductor devices: high voltage |
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PS2401 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; THT Case: SIP4 Mounting: THT Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 1A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 500V AC Control current max.: 100mA |
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| DNA40U2200GU | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 40A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 2.2kV Max. forward voltage: 0.74V Load current: 40A Max. forward impulse current: 370A Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Case: GUFP |
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GBO25-12NO1 | IXYS |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.2kV Load current: 25A Max. forward impulse current: 370A Kind of package: tube Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase Case: GBFP |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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VBO25-12AO2 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Leads: connectors FASTON Max. off-state voltage: 1.2kV Load current: 38A Max. forward impulse current: 370A Kind of package: bulk Electrical mounting: THT Version: square Features of semiconductor devices: avalanche breakdown effect Type of bridge rectifier: single-phase Case: FO-A |
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VBO25-12NO2 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Leads: connectors FASTON Max. off-state voltage: 1.2kV Load current: 38A Max. forward impulse current: 370A Kind of package: bulk Electrical mounting: THT Version: square Type of bridge rectifier: single-phase Case: FO-A |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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VBO25-16AO2 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Leads: connectors FASTON Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Kind of package: bulk Electrical mounting: THT Version: square Features of semiconductor devices: avalanche breakdown effect Type of bridge rectifier: single-phase Case: FO-A |
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VBO25-16NO2 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Leads: connectors FASTON Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Kind of package: bulk Electrical mounting: THT Version: square Type of bridge rectifier: single-phase Case: FO-A |
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DNA90YC2200NA | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase half bridge; Urmax: 2.2kV; If: 90A Max. off-state voltage: 2.2kV Max. forward voltage: 0.86V Load current: 90A Semiconductor structure: common cathode Max. forward impulse current: 370A Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: three-phase half bridge Case: SOT227B |
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CPC1217Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; 200mA; max.60VAC; max.60VDC; 16Ω; THT Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 0.2A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.4x3.3mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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CPC1218Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; 1.1Ω; THT Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 1.1Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.4x3.3mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 920 шт: термін постачання 21-30 дні (днів) |
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CPC1984Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 0.66Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 4kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 2ms Kind of output: MOSFET |
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CPC1986J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 650mA; max.1kVAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 650mA Switched voltage: max. 1kV AC Relay variant: 1-phase On-state resistance: 3Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
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PLA160 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.300VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 50mA Switched voltage: max. 300V AC; max. 300V DC Relay variant: 1-phase; current source On-state resistance: 100Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 50µs Turn-off time: 50µs |
на замовлення 248 шт: термін постачання 21-30 дні (днів) |
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CPC1978J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 750mA Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 2.3Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
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LCA712 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.5Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 350µs Kind of output: MOSFET |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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LCA717 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.30VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 30V AC; max. 30V DC Relay variant: 1-phase; current source On-state resistance: 0.15Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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OAA160 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 50mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 50mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 100Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 125µs Turn-off time: 125µs |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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CPC1215G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.5A Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 6Ω Mounting: THT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.4x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
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CPC1330G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: THT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
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CPC1393G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 492 шт: термін постачання 21-30 дні (днів) |
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CPC1393GV | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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| CNA30E2200FB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 2.2kV; 30A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: thyristor Mounting: THT Case: ISOPLUS i4-pac™ x024c Max. off-state voltage: 2.2kV Load current: 30A Gate current: 250mA Max. forward impulse current: 200A |
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DNA30E2200FE | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V Power dissipation: 110W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: high voltage Mounting: THT Case: ISOPLUS i4-pac™ x024e Max. off-state voltage: 2.2kV Max. forward voltage: 1.22V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 370A |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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DNA30E2200PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W Power dissipation: 210W Kind of package: tube Type of diode: rectifying Mounting: THT Case: TO220AC Max. off-state voltage: 2.2kV Max. forward voltage: 1.24V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 315A |
на замовлення 492 шт: термін постачання 21-30 дні (днів) |
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| DNA30E2200PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W Power dissipation: 210W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: high voltage Mounting: SMD Case: TO263ABHV Max. off-state voltage: 2.2kV Max. forward voltage: 1.24V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 315A |
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MDMA35P1600TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 35A; TO240AA; Ufmax: 1.1V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 35A Case: TO240AA Max. forward voltage: 1.1V Max. forward impulse current: 0.5kA Electrical mounting: screw Mechanical mounting: screw |
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MDMA65P1600TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 65A; TO240AA; Ufmax: 1.11V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 65A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 1.1kA Electrical mounting: screw Mechanical mounting: screw |
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MDMA85P1600TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 85A; TO240AA; Ufmax: 1.1V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 85A Case: TO240AA Max. forward voltage: 1.1V Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw |
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MDMA110P1600TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 110A; TO240AA; Ufmax: 1.14V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: TO240AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.14V Load current: 110A Semiconductor structure: double series Max. forward impulse current: 2kA |
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MDMA140P1600TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.38kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
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IXYH30N450HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1545ns Features of semiconductor devices: high voltage |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IXYT30N450HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1542ns Features of semiconductor devices: high voltage |
товар відсутній |
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PAA193 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 100mA; 50Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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PAA193S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 100mA; 50Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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| PAA193STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 100mA; 50Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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PLA193 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
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PLA193E | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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PLA193S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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| PLA193STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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| XBB170STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
товар відсутній |
| MCD162-14io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD162-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| IXTH200N10T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Case: TO247-3
Mounting: THT
On-state resistance: 5.5mΩ
Kind of package: tube
Power dissipation: 550W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Case: TO247-3
Mounting: THT
On-state resistance: 5.5mΩ
Kind of package: tube
Power dissipation: 550W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 572.98 грн |
| 3+ | 362.1 грн |
| 7+ | 341.99 грн |
| IXTP200N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO220AB; 49ns
Case: TO220AB
Mounting: THT
On-state resistance: 4.2mΩ
Kind of package: tube
Power dissipation: 360W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Drain-source voltage: 55V
Reverse recovery time: 49ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO220AB; 49ns
Case: TO220AB
Mounting: THT
On-state resistance: 4.2mΩ
Kind of package: tube
Power dissipation: 360W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Drain-source voltage: 55V
Reverse recovery time: 49ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.12 грн |
| 3+ | 184.52 грн |
| 6+ | 140.12 грн |
| IXTN200N10T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Case: SOT227B
On-state resistance: 5.5mΩ
Power dissipation: 550W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 500A
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Case: SOT227B
On-state resistance: 5.5mΩ
Power dissipation: 550W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 500A
Polarisation: unipolar
товар відсутній
| IXXX300N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
товар відсутній
| IXXX300N60C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
товар відсутній
| DPG80C400HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.43V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 0.4kA
Power dissipation: 215W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.43V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 0.4kA
Power dissipation: 215W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 345.13 грн |
| 3+ | 288.57 грн |
| 4+ | 226.14 грн |
| CLB30I1200HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Load current: 30A
Gate current: 50mA
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Load current: 30A
Gate current: 50mA
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
товар відсутній
| CLB30I1200PZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Load current: 30A
Gate current: 30/50mA
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Case: TO263ABHV
Max. off-state voltage: 1.2kV
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Load current: 30A
Gate current: 30/50mA
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Case: TO263ABHV
Max. off-state voltage: 1.2kV
Max. load current: 47A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.39 грн |
| 3+ | 181.05 грн |
| 6+ | 137.35 грн |
| 17+ | 129.72 грн |
| IXFH170N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 985.35 грн |
| 3+ | 865.02 грн |
| IXTR102N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
товар відсутній
| IXTX102N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
товар відсутній
| DPF60C300HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-3
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.86 грн |
| 3+ | 240.01 грн |
| 5+ | 181.05 грн |
| 13+ | 171.34 грн |
| DPF60IM400HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; tube; Ifsm: 600A; TO247-2; 275W
Kind of package: tube
Max. forward impulse current: 600A
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.27V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 60ns
Power dissipation: 275W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; tube; Ifsm: 600A; TO247-2; 275W
Kind of package: tube
Max. forward impulse current: 600A
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.27V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 60ns
Power dissipation: 275W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-2
товар відсутній
| IXBOD2-13 |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
товар відсутній
| CLA40E1200HR |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Case: ISO247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Case: ISO247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 628.26 грн |
| 2+ | 464.07 грн |
| 5+ | 439.1 грн |
| 30+ | 431.47 грн |
| MCK200-18io1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double,common cathode; 1.8kV; 216Ax2; Y4-M6
Mechanical mounting: screw
Semiconductor structure: common cathode; double
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 340A
Max. forward voltage: 1.52V
Load current: 216A x2
Category: Thyristor modules
Description: Module: thyristor; double,common cathode; 1.8kV; 216Ax2; Y4-M6
Mechanical mounting: screw
Semiconductor structure: common cathode; double
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 340A
Max. forward voltage: 1.52V
Load current: 216A x2
товар відсутній
| IXTP15P15T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.37 грн |
| 3+ | 187.29 грн |
| 6+ | 149.14 грн |
| 15+ | 140.82 грн |
| IXBX25N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 300W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Turn-on time: 694ns
Turn-off time: 650ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 300W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Turn-on time: 694ns
Turn-off time: 650ns
Features of semiconductor devices: high voltage
товар відсутній
| PS2401 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; THT
Case: SIP4
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; THT
Case: SIP4
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
товар відсутній
| DNA40U2200GU |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
товар відсутній
| GBO25-12NO1 |
|
Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 752.27 грн |
| 2+ | 555.64 грн |
| 4+ | 525.12 грн |
| 16+ | 516.79 грн |
| VBO25-12AO2 |
|
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: avalanche breakdown effect
Type of bridge rectifier: single-phase
Case: FO-A
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: avalanche breakdown effect
Type of bridge rectifier: single-phase
Case: FO-A
товар відсутній
| VBO25-12NO2 |
|
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1303.59 грн |
| 2+ | 1144.58 грн |
| 3+ | 1143.88 грн |
| VBO25-16AO2 |
|
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: avalanche breakdown effect
Type of bridge rectifier: single-phase
Case: FO-A
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: avalanche breakdown effect
Type of bridge rectifier: single-phase
Case: FO-A
товар відсутній
| VBO25-16NO2 |
|
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
товар відсутній
| DNA90YC2200NA |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 2.2kV; If: 90A
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.86V
Load current: 90A
Semiconductor structure: common cathode
Max. forward impulse current: 370A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Case: SOT227B
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 2.2kV; If: 90A
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.86V
Load current: 90A
Semiconductor structure: common cathode
Max. forward impulse current: 370A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Case: SOT227B
товар відсутній
| CPC1217Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 200mA; max.60VAC; max.60VDC; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 200mA; max.60VAC; max.60VDC; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 307.78 грн |
| 6+ | 142.9 грн |
| CPC1218Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; 1.1Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; 1.1Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 345.13 грн |
| 6+ | 158.85 грн |
| 14+ | 150.53 грн |
| CPC1984Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 0.66Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 0.66Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| CPC1986J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 650mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 650mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 650mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 650mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| PLA160 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 300V AC; max. 300V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 50µs
Turn-off time: 50µs
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 300V AC; max. 300V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 50µs
Turn-off time: 50µs
на замовлення 248 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 431.79 грн |
| 5+ | 191.46 грн |
| 12+ | 181.05 грн |
| CPC1978J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 750mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 2.3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 750mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 2.3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| LCA712 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 350µs
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 350µs
Kind of output: MOSFET
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 560.28 грн |
| 4+ | 249.03 грн |
| LCA717 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: 1-phase; current source
On-state resistance: 0.15Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: 1-phase; current source
On-state resistance: 0.15Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| OAA160 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 125µs
Turn-off time: 125µs
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 125µs
Turn-off time: 125µs
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 617.06 грн |
| 3+ | 274.7 грн |
| 9+ | 259.44 грн |
| CPC1215G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 353 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 333.93 грн |
| 6+ | 154.69 грн |
| 15+ | 146.37 грн |
| CPC1330G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
| CPC1393G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 492 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.35 грн |
| 8+ | 100.58 грн |
| 22+ | 95.03 грн |
| CPC1393GV |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.35 грн |
| 8+ | 100.58 грн |
| 22+ | 95.03 грн |
| CNA30E2200FB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 30A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: thyristor
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Max. off-state voltage: 2.2kV
Load current: 30A
Gate current: 250mA
Max. forward impulse current: 200A
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 30A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: thyristor
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Max. off-state voltage: 2.2kV
Load current: 30A
Gate current: 250mA
Max. forward impulse current: 200A
товар відсутній
| DNA30E2200FE |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Power dissipation: 110W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: high voltage
Mounting: THT
Case: ISOPLUS i4-pac™ x024e
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.22V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 370A
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Power dissipation: 110W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: high voltage
Mounting: THT
Case: ISOPLUS i4-pac™ x024e
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.22V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 370A
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 581.2 грн |
| 3+ | 387.08 грн |
| 6+ | 365.57 грн |
| DNA30E2200PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO220AC
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.24V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 315A
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO220AC
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.24V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 315A
на замовлення 492 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.29 грн |
| 3+ | 198.39 грн |
| 5+ | 178.97 грн |
| 10+ | 178.28 грн |
| 13+ | 169.26 грн |
| 50+ | 165.79 грн |
| DNA30E2200PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: high voltage
Mounting: SMD
Case: TO263ABHV
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.24V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 315A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: high voltage
Mounting: SMD
Case: TO263ABHV
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.24V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 315A
товар відсутній
| MDMA35P1600TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 35A; TO240AA; Ufmax: 1.1V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 35A
Case: TO240AA
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 35A; TO240AA; Ufmax: 1.1V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 35A
Case: TO240AA
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDMA65P1600TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 65A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 1.1kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 65A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 1.1kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDMA85P1600TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 85A; TO240AA; Ufmax: 1.1V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.1V
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 85A; TO240AA; Ufmax: 1.1V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.1V
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDMA110P1600TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 110A; TO240AA; Ufmax: 1.14V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.14V
Load current: 110A
Semiconductor structure: double series
Max. forward impulse current: 2kA
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 110A; TO240AA; Ufmax: 1.14V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.14V
Load current: 110A
Semiconductor structure: double series
Max. forward impulse current: 2kA
товар відсутній
| MDMA140P1600TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IXYH30N450HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2271.76 грн |
| IXYT30N450HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
товар відсутній
| PAA193 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 100mA; 50Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 100mA; 50Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| PAA193S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| PAA193STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| PLA193 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| PLA193E |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 249.51 грн |
| 7+ | 115.85 грн |
| 20+ | 109.6 грн |
| PLA193S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 313.76 грн |
| 6+ | 139.43 грн |
| 16+ | 131.8 грн |
| PLA193STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| XBB170STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній