Продукція > IXYS > Всі товари виробника IXYS (16537) > Сторінка 272 з 276

Обрати Сторінку:   [  << Попередня Сторінка ]  1 27 54 81 108 135 162 189 216 243 267 268 269 270 271 272 273 274 275 276  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IXTN102N65X2 IXTN102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
товару немає в наявності
В кошику  од. на суму  грн.
DAA200X1800NA DAA200X1800NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03 Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
1+2546.97 грн
3+2287.69 грн
10+2133.00 грн
30+2077.18 грн
В кошику  од. на суму  грн.
CLA15E1200NPZ-TUB CLA15E1200NPZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B432A891E0C4&compId=CLA15E1200NPZ.pdf?ci_sign=2ea2a8fa3bab3e7257fd2545af159cb17839baac Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: TO263ABHV
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 20/40mA
Load current: 15A
Max. load current: 33A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
3+151.99 грн
4+126.78 грн
10+112.43 грн
50+102.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCO150-12IO1 MCO150-12IO1 IXYS littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+2813.17 грн
В кошику  од. на суму  грн.
LAA110 LAA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
2+305.70 грн
5+256.76 грн
10+237.62 грн
30+226.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110PL LAA110PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
2+303.99 грн
10+248.78 грн
100+228.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110S LAA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
2+379.55 грн
50+297.42 грн
100+282.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA110LS PAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 171 шт:
термін постачання 21-30 дні (днів)
2+400.16 грн
50+348.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA110PL PAA110PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
1+460.27 грн
10+348.46 грн
В кошику  од. на суму  грн.
PAA110S PAA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
1+482.60 грн
10+378.76 грн
50+342.88 грн
В кошику  од. на суму  грн.
PAA110 PAA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
1+461.13 грн
В кошику  од. на суму  грн.
PAA110L PAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
LAA110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
LAA110L LAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110LS LAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PAA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
PAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
IXGN400N60A3 IXGN400N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXGN400N60B3 IXGN400N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXGK400N30A3 IXGK400N30A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240RF1200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240W1200PZTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
товару немає в наявності
В кошику  од. на суму  грн.
DLA60I1200HA DLA60I1200HA IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEF25888C80A143&compId=DLA60I1200HA.pdf?ci_sign=6c4e6c7f1ad2792832ca08e41adebd5c5675cf1b Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Kind of package: tube
Case: TO247-2
Semiconductor structure: single diode
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 60A
Max. forward impulse current: 850A
Power dissipation: 500W
Max. off-state voltage: 1.2kV
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
2+419.91 грн
3+344.47 грн
5+315.76 грн
10+314.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA60MT1200NTZ CLA60MT1200NTZ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF9707D68B38BF&compId=CLA60MT1200NTZ.pdf?ci_sign=42d4db417915f82ec33b9b145dcc3e64a3365bd9 Category: Triacs
Description: Triac; 1.2kV; 30A; D3PAK; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: D3PAK
Mounting: SMD
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+571.05 грн
В кошику  од. на суму  грн.
CPC3710CTR CPC3710CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.22A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
товару немає в наявності
В кошику  од. на суму  грн.
VBE26-06NO7 VBE26-06NO7 IXYS mc784.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 44A; Ifsm: 95A; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 44A
Max. forward impulse current: 95A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2X161-12P DSEI2X161-12P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E1ED4FFB35C0C4&compId=DSEI2X161-12P.pdf?ci_sign=343cf9432e0aec3e86e49b58542713c49e266df3 Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.9V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
1+3057.05 грн
10+2762.93 грн
В кошику  од. на суму  грн.
VBO78-16NO7 VBO78-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87803F5EBF49C0C4&compId=VBO78-16NO7.pdf?ci_sign=b964677d327b9c0e5ec3bc7faf326e2b7b5c4285 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 80A; Ifsm: 750A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 750A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1827.36 грн
3+1492.70 грн
10+1339.60 грн
В кошику  од. на суму  грн.
MDMA60B1600MB IXYS Category: Diode modules
Description: Module: diode; 1.6kV; 60A; ECO-PAC 1; THT; screw
Max. off-state voltage: 1.6kV
Load current: 60A
Electrical mounting: THT
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
MMO140-16IO7 IXYS MMO140%2C%20MLO140.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Max. off-state voltage: 1.6kV
Load current: 58A
Max. forward impulse current: 1.15kA
Electrical mounting: THT
Max. forward voltage: 1.75V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
MMO175-16IO7 IXYS MMO175%2CMLO175.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 1.5kA
Electrical mounting: THT
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
MMO230-16IO7 IXYS MMO230,%20MLO230.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Max. off-state voltage: 1.6kV
Load current: 105A
Max. forward impulse current: 2.25kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Leads: wire Ø 0.75mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 150/200mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2x161-02P DSEI2x161-02P IXYS media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
товару немає в наявності
В кошику  од. на суму  грн.
VCO180-16io7 IXYS media?resourcetype=datasheets&itemid=37D7082B-154B-4541-8F4D-CA2A0A0EB94E&filename=Littelfuse-Power-Semiconductors-VCO180-Datasheet Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 180A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 180A
Electrical mounting: THT
Max. forward voltage: 1.1V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
VCO132-16io7 IXYS media?resourcetype=datasheets&itemid=4A4823B7-9DA2-42A8-AB21-7595BE04F574&filename=Littelfuse-Power-Semiconductors-VCO132-Datasheet Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 130A
Electrical mounting: THT
Max. forward voltage: 1.3V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
MKI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
товару немає в наявності
В кошику  од. на суму  грн.
MWI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
товару немає в наявності
В кошику  од. на суму  грн.
MKI75-06A7 IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXFK520N075T2 IXFK520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
1+873.32 грн
В кошику  од. на суму  грн.
IXFX520N075T2 IXFX520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.28V
Load current: 10A
Power dissipation: 60W
Max. forward impulse current: 130A
Max. off-state voltage: 0.4kV
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
2+398.45 грн
3+332.51 грн
10+294.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DPG10I400PA DPG10I400PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.03V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
4+100.47 грн
10+86.12 грн
50+80.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DPG10I200PM DPG10I200PM IXYS DPG10I200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
4+124.51 грн
50+62.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DPG10I400PM DPG10I400PM IXYS DPG10I400PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.32V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
3+198.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DPG10I200PA DPG10I200PA IXYS media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
4+114.21 грн
10+90.90 грн
50+78.94 грн
100+73.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN614YI IXDN614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 168 шт:
термін постачання 21-30 дні (днів)
2+334.04 грн
10+241.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGT25N160 IXGT25N160 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXSH80N120L2KHV IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFN340N07 IXFN340N07 IXYS pVersion=0046&contRep=ZT&docId=E2920386B7F856F19A99005056AB752F&compId=98547.pdf?ci_sign=105d98d49cea6a7db7877e066e9a5c3dc470e269 Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; screw; Idm: 1.36kA
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 0.49µC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 200ns
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXFT340N075T2 IXFT340N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH340N075T2 IXFH340N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH340N04T4 IXTH340N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTA340N04T4 IXTA340N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTN102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de
IXTN102N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
товару немає в наявності
В кошику  од. на суму  грн.
DAA200X1800NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03
DAA200X1800NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2546.97 грн
3+2287.69 грн
10+2133.00 грн
30+2077.18 грн
В кошику  од. на суму  грн.
CLA15E1200NPZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B432A891E0C4&compId=CLA15E1200NPZ.pdf?ci_sign=2ea2a8fa3bab3e7257fd2545af159cb17839baac
CLA15E1200NPZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: TO263ABHV
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 20/40mA
Load current: 15A
Max. load current: 33A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+151.99 грн
4+126.78 грн
10+112.43 грн
50+102.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCO150-12IO1 littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d
MCO150-12IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2813.17 грн
В кошику  од. на суму  грн.
LAA110 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+305.70 грн
5+256.76 грн
10+237.62 грн
30+226.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+303.99 грн
10+248.78 грн
100+228.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+379.55 грн
50+297.42 грн
100+282.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 171 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+400.16 грн
50+348.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA110PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+460.27 грн
10+348.46 грн
В кошику  од. на суму  грн.
PAA110S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
PAA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+482.60 грн
10+378.76 грн
50+342.88 грн
В кошику  од. на суму  грн.
PAA110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
PAA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+461.13 грн
В кошику  од. на суму  грн.
PAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
LAA110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
LAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PAA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
PAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
IXGN400N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627
IXGN400N60A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXGN400N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6
IXGN400N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXGK400N30A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c
IXGK400N30A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240RF1200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240W1200PTEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240W1200PZTEH pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240W1200TEH media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
товару немає в наявності
В кошику  од. на суму  грн.
DLA60I1200HA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEF25888C80A143&compId=DLA60I1200HA.pdf?ci_sign=6c4e6c7f1ad2792832ca08e41adebd5c5675cf1b
DLA60I1200HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Kind of package: tube
Case: TO247-2
Semiconductor structure: single diode
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 60A
Max. forward impulse current: 850A
Power dissipation: 500W
Max. off-state voltage: 1.2kV
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+419.91 грн
3+344.47 грн
5+315.76 грн
10+314.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA60MT1200NTZ pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF9707D68B38BF&compId=CLA60MT1200NTZ.pdf?ci_sign=42d4db417915f82ec33b9b145dcc3e64a3365bd9
CLA60MT1200NTZ
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; D3PAK; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: D3PAK
Mounting: SMD
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+571.05 грн
В кошику  од. на суму  грн.
CPC3710CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee
CPC3710CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.22A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
товару немає в наявності
В кошику  од. на суму  грн.
VBE26-06NO7 mc784.pdf
VBE26-06NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 44A; Ifsm: 95A; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 44A
Max. forward impulse current: 95A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2X161-12P pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E1ED4FFB35C0C4&compId=DSEI2X161-12P.pdf?ci_sign=343cf9432e0aec3e86e49b58542713c49e266df3
DSEI2X161-12P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.9V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3057.05 грн
10+2762.93 грн
В кошику  од. на суму  грн.
VBO78-16NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87803F5EBF49C0C4&compId=VBO78-16NO7.pdf?ci_sign=b964677d327b9c0e5ec3bc7faf326e2b7b5c4285
VBO78-16NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 80A; Ifsm: 750A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 750A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1827.36 грн
3+1492.70 грн
10+1339.60 грн
В кошику  од. на суму  грн.
MDMA60B1600MB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; 1.6kV; 60A; ECO-PAC 1; THT; screw
Max. off-state voltage: 1.6kV
Load current: 60A
Electrical mounting: THT
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
MMO140-16IO7 MMO140%2C%20MLO140.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Max. off-state voltage: 1.6kV
Load current: 58A
Max. forward impulse current: 1.15kA
Electrical mounting: THT
Max. forward voltage: 1.75V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
MMO175-16IO7 MMO175%2CMLO175.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 1.5kA
Electrical mounting: THT
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
MMO230-16IO7 MMO230,%20MLO230.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Max. off-state voltage: 1.6kV
Load current: 105A
Max. forward impulse current: 2.25kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Leads: wire Ø 0.75mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 150/200mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2x161-02P media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf
DSEI2x161-02P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
товару немає в наявності
В кошику  од. на суму  грн.
VCO180-16io7 media?resourcetype=datasheets&itemid=37D7082B-154B-4541-8F4D-CA2A0A0EB94E&filename=Littelfuse-Power-Semiconductors-VCO180-Datasheet
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 180A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 180A
Electrical mounting: THT
Max. forward voltage: 1.1V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
VCO132-16io7 media?resourcetype=datasheets&itemid=4A4823B7-9DA2-42A8-AB21-7595BE04F574&filename=Littelfuse-Power-Semiconductors-VCO132-Datasheet
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 130A
Electrical mounting: THT
Max. forward voltage: 1.3V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
товару немає в наявності
В кошику  од. на суму  грн.
MKI75-06A7T
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
товару немає в наявності
В кошику  од. на суму  грн.
MWI75-06A7T
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
товару немає в наявності
В кошику  од. на суму  грн.
MKI75-06A7
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXFK520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23
IXFK520N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+873.32 грн
В кошику  од. на суму  грн.
IXFX520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23
IXFX520N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.28V
Load current: 10A
Power dissipation: 60W
Max. forward impulse current: 130A
Max. off-state voltage: 0.4kV
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+398.45 грн
3+332.51 грн
10+294.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DPG10I400PA pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840
DPG10I400PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.03V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+100.47 грн
10+86.12 грн
50+80.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DPG10I200PM DPG10I200PM.pdf
DPG10I200PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+124.51 грн
50+62.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DPG10I400PM DPG10I400PM.pdf
DPG10I400PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.32V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+198.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DPG10I200PA media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet
DPG10I200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+114.21 грн
10+90.90 грн
50+78.94 грн
100+73.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 168 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+334.04 грн
10+241.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGT25N160 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f
IXGT25N160
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXSH80N120L2KHV pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFN340N07 pVersion=0046&contRep=ZT&docId=E2920386B7F856F19A99005056AB752F&compId=98547.pdf?ci_sign=105d98d49cea6a7db7877e066e9a5c3dc470e269
IXFN340N07
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; screw; Idm: 1.36kA
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 0.49µC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 200ns
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXFT340N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1
IXFT340N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH340N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1
IXFH340N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH340N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf
IXTH340N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTA340N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f
IXTA340N04T4
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 27 54 81 108 135 162 189 216 243 267 268 269 270 271 272 273 274 275 276  [ Наступна Сторінка >> ]