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IXTZ550N055T2 IXTZ550N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtz550n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 550A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DE475
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
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IXTF1N400 IXTF1N400 IXYS DS100159D(IXTF1N400).pdf Description: MOSFET N-CH 4000V 1A ISOPLUS I4
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IXTH16N10D2 IXTH16N10D2 IXYS littelfuse-discrete-mosfets-ixt-16n10-datasheet?assetguid=f6744185-82d5-4569-a65f-4b44e1fa3704 Description: MOSFET N-CH 100V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
Power Dissipation (Max): 830W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
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IXTH16N50D2 IXTH16N50D2 IXYS littelfuse-discrete-mosfets-ixt-3n100-datasheet?assetguid=f0dbe4a2-4395-4958-a595-7cdc8d2662e1 Description: MOSFET N-CH 500V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
1+1166.69 грн
10+890.09 грн
30+822.00 грн
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IXTT16N10D2 IXTT16N10D2 IXYS littelfuse-discrete-mosfets-ixt-16n10-datasheet?assetguid=f6744185-82d5-4569-a65f-4b44e1fa3704 Description: MOSFET N-CH 100V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
Power Dissipation (Max): 830W (Tc)
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
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IXGF30N400 IXGF30N400 IXYS littelfuse_discrete_igbts_npt_ixgf30n400_datasheet.pdf.pdf Description: IGBT 4000V 30A 160W I4-PAK
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IXXK100N60B3H1 IXXK100N60B3H1 IXYS IXXK%2CX100N60B3H1.pdf Description: IGBT PT 600V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
1+1664.02 грн
25+1087.82 грн
100+1066.81 грн
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IXXH100N60B3 IXXH100N60B3 IXYS littelfuse_discrete_igbts_xpt_ixxh100n60b3_datasheet.pdf.pdf Description: IGBT 600V 220A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 830 W
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+953.79 грн
30+585.85 грн
120+529.35 грн
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IXXH50N60C3 IXXH50N60C3 IXYS littelfuse-discrete-igbts-ixxh50n60c3-datasheet?assetguid=cba71091-b144-4329-b000-bbf5206ce5e3 Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXH50N60C3D1 IXXH50N60C3D1 IXYS littelfuse-discrete-igbts-ixxh50n60c3d1-datasheet?assetguid=f95c77ee-e30c-40a0-add2-d813f16ccfd2 Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXH100N60C3 IXXH100N60C3 IXYS littelfuse_discrete_igbts_xpt_ixxh100n60c3_datasheet.pdf.pdf Description: IGBT 600V 190A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 830 W
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+909.51 грн
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IXXK100N60C3H1 IXXK100N60C3H1 IXYS DS100283BIXXKX100N60C3H1.pdf Description: IGBT PT 600V 170A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 695 W
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
1+1845.41 грн
25+1161.92 грн
100+1069.65 грн
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IXTA130N10T-TRL IXTA130N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-130n10t-1of2-datasheet?assetguid=35a29cb3-cabc-48a7-80a0-8b3ad9bec8fb Description: MOSFET N-CH 100V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+173.25 грн
Мінімальне замовлення: 800
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IXFA4N100Q-TRL IXFA4N100Q-TRL IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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DEIC421 IXYS Description: IC GATE DRVR LOW-SIDE DE275
Packaging: Bulk
Package / Case: 7-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 30V
Input Type: Inverting
Supplier Device Package: 7-SMD
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 20A, 20A
DigiKey Programmable: Not Verified
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IXFQ60N50P3 IXFQ60N50P3 IXYS DS100311BIXFHFTFQ60N50P3.pdf Description: MOSFET N-CH 500V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
1+794.54 грн
30+456.12 грн
120+388.40 грн
510+340.13 грн
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IXFT60N50P3 IXFT60N50P3 IXYS DS100311BIXFHFTFQ60N50P3.pdf Description: MOSFET N-CH 500V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
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IXFK78N50P3 IXFK78N50P3 IXYS DS100313AIXFKFX78N50P3.pdf Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
на замовлення 917 шт:
термін постачання 21-31 дні (днів)
1+1685.31 грн
25+1054.37 грн
100+956.57 грн
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IXFH28N60P3 IXFH28N60P3 IXYS IXFx28N60P3.pdf Description: MOSFET N-CH 600V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+631.03 грн
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IXFQ28N60P3 IXFQ28N60P3 IXYS IXFx28N60P3.pdf Description: MOSFET N-CH 600V 28A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
1+587.60 грн
30+328.68 грн
120+276.52 грн
510+227.63 грн
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IXFQ50N60P3 IXFQ50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
1+794.54 грн
30+456.12 грн
120+388.40 грн
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IXFB132N50P3 IXFB132N50P3 IXYS DS100315CIXFB132N50P3.pdf Description: MOSFET N-CH 500V 132A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 246 шт:
термін постачання 21-31 дні (днів)
1+1988.48 грн
25+1260.92 грн
100+1178.93 грн
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IXFH22N60P3 IXFH22N60P3 IXYS IXFx22N60P3.pdf Description: MOSFET N-CH 600V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 2045 шт:
термін постачання 21-31 дні (днів)
1+549.28 грн
30+305.47 грн
120+256.47 грн
510+208.93 грн
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IXFP22N60P3 IXFP22N60P3 IXYS IXFx22N60P3.pdf Description: MOSFET N-CH 600V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 681 шт:
термін постачання 21-31 дні (днів)
1+468.38 грн
50+239.57 грн
100+219.16 грн
500+172.14 грн
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IXFQ22N60P3 IXFQ22N60P3 IXYS IXFx22N60P3.pdf Description: MOSFET N-CH 600V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
1+761.33 грн
30+435.75 грн
120+370.48 грн
510+321.91 грн
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IXFK80N60P3 IXFK80N60P3 IXYS DS100304BIXFKFX80N60P3.pdf Description: MOSFET N-CH 600V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
1+1500.52 грн
25+928.08 грн
100+820.71 грн
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IXFX80N60P3 IXFX80N60P3 IXYS DS100304BIXFKFX80N60P3.pdf Description: MOSFET N-CH 600V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
1+1492.00 грн
30+903.95 грн
120+814.92 грн
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IXFN110N60P3 IXFN110N60P3 IXYS DS100305BIXFN110N60P3.pdf Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
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IXYH82N120C3 IXYH82N120C3 IXYS littelfuse-discrete-igbts-ixyh82n120c3-datasheet?assetguid=d0b3d648-a754-4e63-a7a2-de89dbf9c1f6 Description: IGBT 1200V 200A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1250 W
на замовлення 1120 шт:
термін постачання 21-31 дні (днів)
1+1495.41 грн
30+906.88 грн
120+819.90 грн
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IXYN82N120C3H1 IXYN82N120C3H1 IXYS littelfusediscreteigbtsxptixyn82n120c3h1datas.pdf Description: IGBT MODULE 1200V 105A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
1+2524.99 грн
10+1797.73 грн
100+1584.14 грн
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IXYB82N120C3H1 IXYB82N120C3H1 IXYS littelfuse_discrete_igbts_xpt_ixyb82n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 164A 1040W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 164 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 1040 W
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SLMD121H4 SLMD121H4 IXYS 20110107-SLMD121H04-DATA-SHEET.pdf Description: MONO SOLAR CELL 43MM X 14MM
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SLMD121H8L SLMD121H8L IXYS 20110107-SLMD121H08-DATA-SHEET.pdf Description: MONO SOLAR CELL 86MM X 14MM
на замовлення 167 шт:
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SLMD600H10 SLMD600H10 IXYS 20110107-SLMD600H10-DATA-SHEET.pdf Description: MONO SOLAR CELL 22MM X 35MM
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SLMD960H12 SLMD960H12 IXYS 20110107-SLMD960H12-SLMD4235-DATA-SHEET.pdf Description: MONO SOLAR CELL 42MM X 35MM
на замовлення 652 шт:
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SLMD121H10 SLMD121H10 IXYS 20110107-SLMD121H10-DATA-SHEET.pdf Description: MONO SOLAR CELL 42MM X 35MM
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SLMD481H08 SLMD481H08 IXYS 20110107-SLMD121H08-DATA-SHEET.pdf Description: MONO SOLAR CELL 86MM X 14MM
на замовлення 152 шт:
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SLMD481H10 SLMD481H10 IXYS 20111214-SLMD481H10-DATA-SHEET.pdf Description: MONO SOLAR CELL 89MM X 67MM
на замовлення 28 шт:
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SLMD481H12 SLMD481H12 IXYS 20111214-SLMD481H12-DATA-SHEET.pdf Description: MONO SOLAR CELL 90MM X 79MM
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IXFT70N20Q3 IXFT70N20Q3 IXYS Description: MOSFET N-CH 200V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
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IXFT50N30Q3 IXFT50N30Q3 IXYS Description: MOSFET N-CH 300V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 25 V
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IXFH70N30Q3 IXFH70N30Q3 IXYS 70n30q3datasheetpdf.pdf Description: MOSFET N-CH 300V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V
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IXFT70N30Q3 IXFT70N30Q3 IXYS littelfuse-discrete-mosfets-ixf-70n30q3-datasheet?assetguid=14ebd198-1754-4832-82c8-c32657ebb39e Description: MOSFET N-CH 300V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V
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IXFB100N50Q3 IXFB100N50Q3 IXYS Description: MOSFET N-CH 500V 100A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
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IXFR44N50Q3 IXFR44N50Q3 IXYS littelfuse-discrete-mosfets-ixfr44n50q3-datasheet?assetguid=30eb058e-3e55-4acd-a032-b5b82e5dcf85 Description: MOSFET N-CH 500V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFT30N50Q3 IXFT30N50Q3 IXYS littelfuse-discrete-mosfets-ixf-30n50q3-datasheet?assetguid=5b0b5bfa-14d1-4221-a3ae-274cbbd7b5ae Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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IXFH44N50Q3 IXFH44N50Q3 IXYS littelfuse-discrete-mosfets-ixf-44n50q3-datasheet?assetguid=5aacfe07-33b7-4821-8fae-0488c7c0a754 Description: MOSFET N-CH 500V 44A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
1+1548.21 грн
30+940.99 грн
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IXFT44N50Q3 IXFT44N50Q3 IXYS media?resourcetype=datasheets&itemid=5AACFE07-33B7-4821-8FAE-0488C7C0A754&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-44N50Q3-Datasheet.PDF Description: MOSFET N-CH 500V 44A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFR64N50Q3 IXFR64N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr64n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 45A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
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IXFN80N50Q3 IXFN80N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 63A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
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IXFK64N50Q3 IXFK64N50Q3 IXYS Description: MOSFET N-CH 500V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
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IXFX64N50Q3 IXFX64N50Q3 IXYS Description: MOSFET N-CH 500V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
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IXFK80N50Q3 IXFK80N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
1+2563.31 грн
25+2046.24 грн
100+1918.35 грн
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IXFX80N50Q3 IXFX80N50Q3 IXYS Description: MOSFET N-CH 500V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
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IXFN100N50Q3 IXFN100N50Q3 IXYS Description: MOSFET N-CH 500V 82A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
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IXFR64N60Q3 IXFR64N60Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr64n60q3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 42A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 32A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9930 pF @ 25 V
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IXFK48N60Q3 IXFK48N60Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_48n60q3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 24A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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IXFX48N60Q3 IXFX48N60Q3 IXYS Description: MOSFET N-CH 600V 48A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 24A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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IXFX64N60Q3 IXFX64N60Q3 IXYS Description: MOSFET N-CH 600V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9930 pF @ 25 V
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IXFN82N60Q3 IXFN82N60Q3 IXYS DS100340IXFN82N60Q3.pdf Description: MOSFET N-CH 600V 66A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+4240.11 грн
10+3116.88 грн
100+3020.27 грн
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IXTZ550N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixtz550n055t2_datasheet.pdf.pdf
IXTZ550N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 550A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DE475
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
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IXTF1N400 DS100159D(IXTF1N400).pdf
IXTF1N400
Виробник: IXYS
Description: MOSFET N-CH 4000V 1A ISOPLUS I4
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IXTH16N10D2 littelfuse-discrete-mosfets-ixt-16n10-datasheet?assetguid=f6744185-82d5-4569-a65f-4b44e1fa3704
IXTH16N10D2
Виробник: IXYS
Description: MOSFET N-CH 100V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
Power Dissipation (Max): 830W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
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IXTH16N50D2 littelfuse-discrete-mosfets-ixt-3n100-datasheet?assetguid=f0dbe4a2-4395-4958-a595-7cdc8d2662e1
IXTH16N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1166.69 грн
10+890.09 грн
30+822.00 грн
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IXTT16N10D2 littelfuse-discrete-mosfets-ixt-16n10-datasheet?assetguid=f6744185-82d5-4569-a65f-4b44e1fa3704
IXTT16N10D2
Виробник: IXYS
Description: MOSFET N-CH 100V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
Power Dissipation (Max): 830W (Tc)
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
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IXGF30N400 littelfuse_discrete_igbts_npt_ixgf30n400_datasheet.pdf.pdf
IXGF30N400
Виробник: IXYS
Description: IGBT 4000V 30A 160W I4-PAK
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IXXK100N60B3H1 IXXK%2CX100N60B3H1.pdf
IXXK100N60B3H1
Виробник: IXYS
Description: IGBT PT 600V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1664.02 грн
25+1087.82 грн
100+1066.81 грн
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IXXH100N60B3 littelfuse_discrete_igbts_xpt_ixxh100n60b3_datasheet.pdf.pdf
IXXH100N60B3
Виробник: IXYS
Description: IGBT 600V 220A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 830 W
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+953.79 грн
30+585.85 грн
120+529.35 грн
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IXXH50N60C3 littelfuse-discrete-igbts-ixxh50n60c3-datasheet?assetguid=cba71091-b144-4329-b000-bbf5206ce5e3
IXXH50N60C3
Виробник: IXYS
Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXH50N60C3D1 littelfuse-discrete-igbts-ixxh50n60c3d1-datasheet?assetguid=f95c77ee-e30c-40a0-add2-d813f16ccfd2
IXXH50N60C3D1
Виробник: IXYS
Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXH100N60C3 littelfuse_discrete_igbts_xpt_ixxh100n60c3_datasheet.pdf.pdf
IXXH100N60C3
Виробник: IXYS
Description: IGBT 600V 190A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 830 W
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+909.51 грн
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IXXK100N60C3H1 DS100283BIXXKX100N60C3H1.pdf
IXXK100N60C3H1
Виробник: IXYS
Description: IGBT PT 600V 170A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 695 W
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1845.41 грн
25+1161.92 грн
100+1069.65 грн
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IXTA130N10T-TRL littelfuse-discrete-mosfets-ixt-130n10t-1of2-datasheet?assetguid=35a29cb3-cabc-48a7-80a0-8b3ad9bec8fb
IXTA130N10T-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+173.25 грн
Мінімальне замовлення: 800
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IXFA4N100Q-TRL littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf
IXFA4N100Q-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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DEIC421
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE DE275
Packaging: Bulk
Package / Case: 7-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 30V
Input Type: Inverting
Supplier Device Package: 7-SMD
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 20A, 20A
DigiKey Programmable: Not Verified
товару немає в наявності
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IXFQ60N50P3 DS100311BIXFHFTFQ60N50P3.pdf
IXFQ60N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+794.54 грн
30+456.12 грн
120+388.40 грн
510+340.13 грн
В кошику  од. на суму  грн.
IXFT60N50P3 DS100311BIXFHFTFQ60N50P3.pdf
IXFT60N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
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IXFK78N50P3 DS100313AIXFKFX78N50P3.pdf
IXFK78N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
на замовлення 917 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1685.31 грн
25+1054.37 грн
100+956.57 грн
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IXFH28N60P3 IXFx28N60P3.pdf
IXFH28N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+631.03 грн
В кошику  од. на суму  грн.
IXFQ28N60P3 IXFx28N60P3.pdf
IXFQ28N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 28A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+587.60 грн
30+328.68 грн
120+276.52 грн
510+227.63 грн
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IXFQ50N60P3 IXFx50N60P3.pdf
IXFQ50N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+794.54 грн
30+456.12 грн
120+388.40 грн
В кошику  од. на суму  грн.
IXFB132N50P3 DS100315CIXFB132N50P3.pdf
IXFB132N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 132A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 246 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1988.48 грн
25+1260.92 грн
100+1178.93 грн
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IXFH22N60P3 IXFx22N60P3.pdf
IXFH22N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 2045 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+549.28 грн
30+305.47 грн
120+256.47 грн
510+208.93 грн
В кошику  од. на суму  грн.
IXFP22N60P3 IXFx22N60P3.pdf
IXFP22N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 681 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+468.38 грн
50+239.57 грн
100+219.16 грн
500+172.14 грн
В кошику  од. на суму  грн.
IXFQ22N60P3 IXFx22N60P3.pdf
IXFQ22N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+761.33 грн
30+435.75 грн
120+370.48 грн
510+321.91 грн
В кошику  од. на суму  грн.
IXFK80N60P3 DS100304BIXFKFX80N60P3.pdf
IXFK80N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1500.52 грн
25+928.08 грн
100+820.71 грн
В кошику  од. на суму  грн.
IXFX80N60P3 DS100304BIXFKFX80N60P3.pdf
IXFX80N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1492.00 грн
30+903.95 грн
120+814.92 грн
В кошику  од. на суму  грн.
IXFN110N60P3 DS100305BIXFN110N60P3.pdf
IXFN110N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
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IXYH82N120C3 littelfuse-discrete-igbts-ixyh82n120c3-datasheet?assetguid=d0b3d648-a754-4e63-a7a2-de89dbf9c1f6
IXYH82N120C3
Виробник: IXYS
Description: IGBT 1200V 200A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1250 W
на замовлення 1120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1495.41 грн
30+906.88 грн
120+819.90 грн
В кошику  од. на суму  грн.
IXYN82N120C3H1 littelfusediscreteigbtsxptixyn82n120c3h1datas.pdf
IXYN82N120C3H1
Виробник: IXYS
Description: IGBT MODULE 1200V 105A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2524.99 грн
10+1797.73 грн
100+1584.14 грн
В кошику  од. на суму  грн.
IXYB82N120C3H1 littelfuse_discrete_igbts_xpt_ixyb82n120c3h1_datasheet.pdf.pdf
IXYB82N120C3H1
Виробник: IXYS
Description: IGBT 1200V 164A 1040W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 164 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 1040 W
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SLMD121H4 20110107-SLMD121H04-DATA-SHEET.pdf
SLMD121H4
Виробник: IXYS
Description: MONO SOLAR CELL 43MM X 14MM
товару немає в наявності
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SLMD121H8L 20110107-SLMD121H08-DATA-SHEET.pdf
SLMD121H8L
Виробник: IXYS
Description: MONO SOLAR CELL 86MM X 14MM
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
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SLMD600H10 20110107-SLMD600H10-DATA-SHEET.pdf
SLMD600H10
Виробник: IXYS
Description: MONO SOLAR CELL 22MM X 35MM
товару немає в наявності
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SLMD960H12 20110107-SLMD960H12-SLMD4235-DATA-SHEET.pdf
SLMD960H12
Виробник: IXYS
Description: MONO SOLAR CELL 42MM X 35MM
на замовлення 652 шт:
термін постачання 21-31 дні (днів)
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SLMD121H10 20110107-SLMD121H10-DATA-SHEET.pdf
SLMD121H10
Виробник: IXYS
Description: MONO SOLAR CELL 42MM X 35MM
товару немає в наявності
В кошику  од. на суму  грн.
SLMD481H08 20110107-SLMD121H08-DATA-SHEET.pdf
SLMD481H08
Виробник: IXYS
Description: MONO SOLAR CELL 86MM X 14MM
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
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SLMD481H10 20111214-SLMD481H10-DATA-SHEET.pdf
SLMD481H10
Виробник: IXYS
Description: MONO SOLAR CELL 89MM X 67MM
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
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SLMD481H12 20111214-SLMD481H12-DATA-SHEET.pdf
SLMD481H12
Виробник: IXYS
Description: MONO SOLAR CELL 90MM X 79MM
товару немає в наявності
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IXFT70N20Q3
IXFT70N20Q3
Виробник: IXYS
Description: MOSFET N-CH 200V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
товару немає в наявності
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IXFT50N30Q3
IXFT50N30Q3
Виробник: IXYS
Description: MOSFET N-CH 300V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 25 V
товару немає в наявності
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IXFH70N30Q3 70n30q3datasheetpdf.pdf
IXFH70N30Q3
Виробник: IXYS
Description: MOSFET N-CH 300V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V
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IXFT70N30Q3 littelfuse-discrete-mosfets-ixf-70n30q3-datasheet?assetguid=14ebd198-1754-4832-82c8-c32657ebb39e
IXFT70N30Q3
Виробник: IXYS
Description: MOSFET N-CH 300V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V
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IXFB100N50Q3
IXFB100N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 100A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
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IXFR44N50Q3 littelfuse-discrete-mosfets-ixfr44n50q3-datasheet?assetguid=30eb058e-3e55-4acd-a032-b5b82e5dcf85
IXFR44N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFT30N50Q3 littelfuse-discrete-mosfets-ixf-30n50q3-datasheet?assetguid=5b0b5bfa-14d1-4221-a3ae-274cbbd7b5ae
IXFT30N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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IXFH44N50Q3 littelfuse-discrete-mosfets-ixf-44n50q3-datasheet?assetguid=5aacfe07-33b7-4821-8fae-0488c7c0a754
IXFH44N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 44A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1548.21 грн
30+940.99 грн
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IXFT44N50Q3 media?resourcetype=datasheets&itemid=5AACFE07-33B7-4821-8FAE-0488C7C0A754&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-44N50Q3-Datasheet.PDF
IXFT44N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 44A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFR64N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr64n50q3_datasheet.pdf.pdf
IXFR64N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 45A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
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IXFN80N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50q3_datasheet.pdf.pdf
IXFN80N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 63A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
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IXFK64N50Q3
IXFK64N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
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IXFX64N50Q3
IXFX64N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
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IXFK80N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n50q3_datasheet.pdf.pdf
IXFK80N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2563.31 грн
25+2046.24 грн
100+1918.35 грн
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IXFX80N50Q3
IXFX80N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
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IXFN100N50Q3
IXFN100N50Q3
Виробник: IXYS
Description: MOSFET N-CH 500V 82A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
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IXFR64N60Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr64n60q3_datasheet.pdf.pdf
IXFR64N60Q3
Виробник: IXYS
Description: MOSFET N-CH 600V 42A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 32A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9930 pF @ 25 V
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IXFK48N60Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_48n60q3_datasheet.pdf.pdf
IXFK48N60Q3
Виробник: IXYS
Description: MOSFET N-CH 600V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 24A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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IXFX48N60Q3
IXFX48N60Q3
Виробник: IXYS
Description: MOSFET N-CH 600V 48A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 24A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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IXFX64N60Q3
IXFX64N60Q3
Виробник: IXYS
Description: MOSFET N-CH 600V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9930 pF @ 25 V
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IXFN82N60Q3 DS100340IXFN82N60Q3.pdf
IXFN82N60Q3
Виробник: IXYS
Description: MOSFET N-CH 600V 66A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4240.11 грн
10+3116.88 грн
100+3020.27 грн
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