| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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CLA40MT1200NPZ-TUB | IXYS |
 Category: TriacsDescription: Triac; 1.2kV; 20A; TO263ABHV; Igt: 40/60mA; Ifsm: 170A Type of thyristor: triac Max. off-state voltage: 1.2kV Max. load current: 20A Case: TO263ABHV Gate current: 40/60mA Max. forward impulse current: 170A Mounting: SMD Kind of package: tube |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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| IXTL2N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™ Case: ISOPLUS i5-pac™ Mounting: THT Kind of package: tube Drain current: 2A Power dissipation: 220W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Gate charge: 180nC Reverse recovery time: 1.75µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 20Ω |
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IXTF02N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 0.2A Power dissipation: 78W Case: ISOPLUS i4-pac™ x024c On-state resistance: 625Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs |
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IXGH50N90B2D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3 Type of transistor: IGBT Technology: GenX3™; HiPerFAST™; PT Collector-emitter voltage: 900V Collector current: 50A Power dissipation: 400W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 135nC Kind of package: tube Turn-on time: 48ns Turn-off time: 820ns |
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LBA716 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.4Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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LBA716S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.4Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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| LBA716STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.4Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LCA100LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Operating temperature: -40...85°C On-state resistance: 25Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Case: DIP6 |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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| LCA100LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Operating temperature: -40...85°C On-state resistance: 25Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Case: DIP6 |
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IXTP270N04T4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 375W Case: TO220AB On-state resistance: 2.4mΩ Mounting: THT Gate charge: 182nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 48ns |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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IXFH16N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 16A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Power dissipation: 660W Case: TO247-3 On-state resistance: 0.95Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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IXFK26N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 26A Power dissipation: 960W Case: TO264 On-state resistance: 0.5Ω Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced |
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IXFR16N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 230W Case: ISOPLUS247™ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXFR26N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Power dissipation: 320W Case: ISOPLUS247™ On-state resistance: 0.55Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
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IXFT16N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Power dissipation: 660W Case: TO268 On-state resistance: 0.95Ω Mounting: SMD Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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IXBH42N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3 Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 188nC Kind of package: tube Turn-on time: 33ns Turn-off time: 308ns Features of semiconductor devices: high voltage |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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IXBN42N170A | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B Technology: BiMOSFET™ Collector current: 21A Power dissipation: 313W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 265A Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Features of semiconductor devices: high voltage Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXBT42N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268 Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 357W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: SMD Gate charge: 188nC Kind of package: tube Turn-on time: 33ns Turn-off time: 308ns Features of semiconductor devices: high voltage |
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IXGF32N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 19A Power dissipation: 200W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 146nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
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IXGH32N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXGH32N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
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IXGT32N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
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IXGT32N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: SMD Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
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| VUO55-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.03V Leads: M5 screws Case: PWS-B Mechanical mounting: screw |
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MDD255-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V Max. off-state voltage: 1.6kV Load current: 270A Max. forward impulse current: 8.4kA Electrical mounting: screw Max. forward voltage: 1.4V Case: Y1-CU Mechanical mounting: screw Semiconductor structure: double series Type of module: diode Max. load current: 450A |
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DSI2x55-16A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.6kV; If: 60Ax2; SOT227B; screw Max. off-state voltage: 1.6kV Load current: 60A x2 Max. forward impulse current: 680A Electrical mounting: screw Max. forward voltage: 1.22V Case: SOT227B Mechanical mounting: screw Semiconductor structure: double independent Type of module: diode |
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IXGT25N160 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268 Type of transistor: IGBT Collector current: 25A Case: TO268 Mounting: SMD Gate-emitter voltage: ±20V Pulsed collector current: 200A Turn-on time: 283ns Turn-off time: 526ns Collector-emitter voltage: 1.6kV Power dissipation: 300W Technology: NPT Features of semiconductor devices: high voltage Kind of package: tube Gate charge: 84nC |
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DFE10I600PM | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; TO220FP-2; 30W Mounting: THT Power dissipation: 30W Kind of package: tube Type of diode: rectifying Technology: FRED Case: TO220FP-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.38V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 110ns Max. forward impulse current: 100A |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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IXGH50N90B2 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3 Type of transistor: IGBT Technology: HiPerFAST™; XPT™ Collector-emitter voltage: 900V Collector current: 50A Power dissipation: 400W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 135nC Kind of package: tube Turn-on time: 48ns Turn-off time: 820ns |
на замовлення 179 шт: термін постачання 21-30 дні (днів) |
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IXFK32N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced |
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IXFK52N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Gate charge: 245nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 260ns |
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IXFR32N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Power dissipation: 570W Case: ISOPLUS247™ On-state resistance: 0.35Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFX32N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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| CPC1335P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
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| CPC1335PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
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IXTR16P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Gate charge: 92nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 440ns Drain-source voltage: -600V Drain current: -10A On-state resistance: 0.79Ω Type of transistor: P-MOSFET Power dissipation: 190W Polarisation: unipolar |
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IXFH120N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO247-3 On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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IXFH120N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 890W Case: TO247-3 On-state resistance: 23mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 108ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXFH120N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO247-3 On-state resistance: 12mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXFH120N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFH150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Power dissipation: 714W Case: TO247-3 On-state resistance: 13mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
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IXFH180N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 180A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 94ns |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IXTH44P15T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: THT Gate charge: 175nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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PLA170 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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PLA170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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| PLA170STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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DSS10-0045B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 10A; 75W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.46V Case: TO220AC Kind of package: tube Max. forward impulse current: 160A Power dissipation: 75W |
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DSS10-006A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; 90W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.62V Case: TO220AC Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W |
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IXYH40N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 40A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 74nC Kind of package: tube Turn-on time: 81ns Turn-off time: 237ns |
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IXYX140N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 140A Power dissipation: 1.63kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 330nC Kind of package: tube Turn-on time: 122ns Turn-off time: 0.3µs |
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| IXFZ520N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 420A Power dissipation: 600W Case: DE475 On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 545nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
товар відсутній |
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IXFL32N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Power dissipation: 520W Case: ISOPLUS i5-pac™ On-state resistance: 0.34Ω Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhanced |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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MCC162-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Max. forward impulse current: 6.48kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| MCC162-18IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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LDA100 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6 Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Type of optocoupler: optocoupler |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
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| LDA100S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Trigger current: 50mA Type of optocoupler: optocoupler |
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LDA100STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Trigger current: 50mA Type of optocoupler: optocoupler |
на замовлення 737 шт: термін постачання 21-30 дні (днів) |
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IXXX200N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX4™; Trench; XPT™ Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1kA Turn-on time: 135ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 517nC Collector-emitter voltage: 650V |
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| VCO132-16io7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT Type of module: thyristor Leads: wire Ø 1.5mm Kind of package: bulk Electrical mounting: THT Mechanical mounting: screw Case: ECO-PAC 2 Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 130A Semiconductor structure: single thyristor Gate current: 300/400mA |
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IXFK160N30T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264 Type of transistor: N-MOSFET Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: TO264 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
товар відсутній |
| CLA40MT1200NPZ-TUB |
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Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 20A; TO263ABHV; Igt: 40/60mA; Ifsm: 170A
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 20A
Case: TO263ABHV
Gate current: 40/60mA
Max. forward impulse current: 170A
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 1.2kV; 20A; TO263ABHV; Igt: 40/60mA; Ifsm: 170A
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 20A
Case: TO263ABHV
Gate current: 40/60mA
Max. forward impulse current: 170A
Mounting: SMD
Kind of package: tube
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.85 грн |
| 3+ | 213.12 грн |
| 5+ | 161.22 грн |
| 14+ | 152.23 грн |
| IXTL2N450 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Case: ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Drain current: 2A
Power dissipation: 220W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Gate charge: 180nC
Reverse recovery time: 1.75µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 20Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Case: ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Drain current: 2A
Power dissipation: 220W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Gate charge: 180nC
Reverse recovery time: 1.75µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 20Ω
товар відсутній
| IXTF02N450 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
товар відсутній
| IXGH50N90B2D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
товар відсутній
| LBA716 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.4Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.4Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 745.16 грн |
| 3+ | 331.44 грн |
| 7+ | 313.45 грн |
| LBA716S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.4Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.4Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 768.26 грн |
| 3+ | 331.44 грн |
| 7+ | 313.45 грн |
| LBA716STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.4Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.4Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LCA100LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 25Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 25Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
на замовлення 167 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 315.2 грн |
| 6+ | 135.62 грн |
| 17+ | 128.01 грн |
| LCA100LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 25Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 25Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
товар відсутній
| IXTP270N04T4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.78 грн |
| 3+ | 188.9 грн |
| 6+ | 155.69 грн |
| 15+ | 146.69 грн |
| IXFH16N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 16A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 16A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK26N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFR16N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 230W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 230W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1214.61 грн |
| 2+ | 1066.96 грн |
| 3+ | 1066.27 грн |
| IXFR26N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT16N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXBH42N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1546.21 грн |
| 2+ | 1357.58 грн |
| 10+ | 1334.74 грн |
| 30+ | 1304.99 грн |
| IXBN42N170A |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Technology: BiMOSFET™
Collector current: 21A
Power dissipation: 313W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Technology: BiMOSFET™
Collector current: 21A
Power dissipation: 313W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2266.78 грн |
| IXBT42N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGF32N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGH32N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1225.79 грн |
| 2+ | 1075.96 грн |
| IXGH32N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGT32N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGT32N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
товар відсутній
| VUO55-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.03V
Leads: M5 screws
Case: PWS-B
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.03V
Leads: M5 screws
Case: PWS-B
Mechanical mounting: screw
товар відсутній
| MDD255-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. off-state voltage: 1.6kV
Load current: 270A
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. forward voltage: 1.4V
Case: Y1-CU
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
Max. load current: 450A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. off-state voltage: 1.6kV
Load current: 270A
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. forward voltage: 1.4V
Case: Y1-CU
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
Max. load current: 450A
товар відсутній
| DSI2x55-16A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.6kV
Load current: 60A x2
Max. forward impulse current: 680A
Electrical mounting: screw
Max. forward voltage: 1.22V
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: double independent
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.6kV
Load current: 60A x2
Max. forward impulse current: 680A
Electrical mounting: screw
Max. forward voltage: 1.22V
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: double independent
Type of module: diode
товар відсутній
| IXGT25N160 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Collector current: 25A
Case: TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Turn-on time: 283ns
Turn-off time: 526ns
Collector-emitter voltage: 1.6kV
Power dissipation: 300W
Technology: NPT
Features of semiconductor devices: high voltage
Kind of package: tube
Gate charge: 84nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Collector current: 25A
Case: TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Turn-on time: 283ns
Turn-off time: 526ns
Collector-emitter voltage: 1.6kV
Power dissipation: 300W
Technology: NPT
Features of semiconductor devices: high voltage
Kind of package: tube
Gate charge: 84nC
товар відсутній
| DFE10I600PM |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: FRED
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.38V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 110ns
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: FRED
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.38V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 110ns
Max. forward impulse current: 100A
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.18 грн |
| 10+ | 85.11 грн |
| 11+ | 76.11 грн |
| 30+ | 71.96 грн |
| IXGH50N90B2 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 566.32 грн |
| 3+ | 377.1 грн |
| 6+ | 356.35 грн |
| IXFK32N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK52N100X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
товар відсутній
| IXFR32N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2321.18 грн |
| IXFX32N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| CPC1335P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
товар відсутній
| CPC1335PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
товар відсутній
| IXTR16P60P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
товар відсутній
| IXFH120N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 457.53 грн |
| 3+ | 381.95 грн |
| 6+ | 370.19 грн |
| 10+ | 356.35 грн |
| IXFH120N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 764.54 грн |
| 2+ | 653.19 грн |
| 3+ | 636.58 грн |
| 4+ | 617.21 грн |
| IXFH120N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 807.01 грн |
| 2+ | 613.05 грн |
| 4+ | 579.84 грн |
| 10+ | 579.15 грн |
| IXFH120N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1118.49 грн |
| 2+ | 750.06 грн |
| 3+ | 708.54 грн |
| IXFH150N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH180N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 906.12 грн |
| 2+ | 750.06 грн |
| 3+ | 708.54 грн |
| 10+ | 696.78 грн |
| IXTH44P15T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.02 грн |
| 3+ | 312.06 грн |
| 8+ | 294.76 грн |
| 30+ | 289.92 грн |
| PLA170 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| PLA170S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 326.38 грн |
| 6+ | 146 грн |
| 16+ | 137.7 грн |
| PLA170STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| DSS10-0045B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; 75W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 160A
Power dissipation: 75W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; 75W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 160A
Power dissipation: 75W
товар відсутній
| DSS10-006A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| IXYH40N90C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
товар відсутній
| IXYX140N90C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
товар відсутній
| IXFZ520N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFL32N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3265.3 грн |
| 25+ | 2971.17 грн |
| MCC162-18io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4543.25 грн |
| MCC162-18IO1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| LDA100 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Type of optocoupler: optocoupler
на замовлення 137 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.2 грн |
| 11+ | 32.38 грн |
| 25+ | 28.51 грн |
| 31+ | 26.99 грн |
| 83+ | 25.53 грн |
| LDA100S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
товар відсутній
| LDA100STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
на замовлення 737 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 63.34 грн |
| 8+ | 48.02 грн |
| 25+ | 37.5 грн |
| 30+ | 27.19 грн |
| 83+ | 25.74 грн |
| 250+ | 24.98 грн |
| IXXX200N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
товар відсутній
| VCO132-16io7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Type of module: thyristor
Leads: wire Ø 1.5mm
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Case: ECO-PAC 2
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 130A
Semiconductor structure: single thyristor
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Type of module: thyristor
Leads: wire Ø 1.5mm
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Case: ECO-PAC 2
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 130A
Semiconductor structure: single thyristor
Gate current: 300/400mA
товар відсутній
| IXFK160N30T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній