Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXFL60N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 40A Power dissipation: 625W Case: ISOPLUS264™ Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
товар відсутній |
||||||||||||
LF2136BTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Output current: -350...200mA Operating temperature: -40...125°C Mounting: SMD Supply voltage: 10...20V Case: SO28 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 600V Type of integrated circuit: driver Number of channels: 6 |
товар відсутній |
||||||||||||
LF2388BTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Number of channels: 6 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 600V Mounting: SMD Operating temperature: -40...125°C Case: SO20 Supply voltage: 10...20V Output current: -750...420mA Type of integrated circuit: driver |
товар відсутній |
||||||||||||
IXFH220N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 220A Power dissipation: 960W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: THT Gate charge: 204nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 116ns |
товар відсутній |
||||||||||||
IXFK220N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 220A Power dissipation: 960W Case: TO264 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: THT Gate charge: 204nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 116ns |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXFT220N20X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268 Kind of package: tube Mounting: SMD Power dissipation: 960W Polarisation: unipolar Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Case: TO268 Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||
IXFA220N06T3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns |
товар відсутній |
||||||||||||
IXFH220N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXFP220N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
MCC26-08io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V Case: TO240AA Kind of package: bulk Max. off-state voltage: 800V Gate current: 100/200mA Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of module: thyristor Load current: 27A |
товар відсутній |
||||||||||||
MCC26-08io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V Case: TO240AA Kind of package: bulk Max. off-state voltage: 800V Gate current: 100/200mA Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of module: thyristor Load current: 27A |
товар відсутній |
||||||||||||
MCC26-12io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.2kV Gate current: 100/200mA Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.27V Max. forward impulse current: 440A Type of module: thyristor Load current: 27A |
товар відсутній |
||||||||||||
MCC26-14io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 27A Case: TO240AA Max. forward voltage: 1.65V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
||||||||||||
MCC26-14io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.4kV Gate current: 100/200mA Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of module: thyristor Load current: 27A |
товар відсутній |
||||||||||||
MCC26-16io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.6kV Gate current: 100/200mA Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of module: thyristor Load current: 27A |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
CPC1150N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Case: SOP4 Mounting: SMT On-state resistance: 50Ω Operating temperature: -40...85°C Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 2ms Body dimensions: 4.09x3.81x2.03mm |
на замовлення 621 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
CPC1150NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Case: SOP4 Mounting: SMT On-state resistance: 50Ω Operating temperature: -40...85°C Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 2ms Body dimensions: 4.09x3.81x2.03mm |
товар відсутній |
||||||||||||
MCMA110P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 110A Max. load current: 170A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.9kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
||||||||||||
PD2401 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; THT Type of relay: solid state Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 500V AC Relay variant: 1-phase Mounting: THT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
PD2401X2 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 6.6mA; 1000mA; max.280VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 6.6mA Max. operating current: 1A Switched voltage: max. 280V AC Relay variant: 1-phase Case: DIP16 Operating temperature: -40...85°C Switching method: zero voltage switching Turn-on time: 10ms Turn-off time: 10ms |
товар відсутній |
||||||||||||
LDA101 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Case: DIP6 |
товар відсутній |
||||||||||||
LDA101S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Turn-on time: 7µs Turn-off time: 20µs Trigger current: 50mA |
товар відсутній |
||||||||||||
LDA101STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Turn-on time: 7µs Turn-off time: 20µs Trigger current: 50mA |
товар відсутній |
||||||||||||
IXLF19N250A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 19A Power dissipation: 250W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 70A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 100ns Turn-off time: 600ns Features of semiconductor devices: high voltage |
товар відсутній |
||||||||||||
MIXG330PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV |
товар відсутній |
||||||||||||
MIXG330PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV |
товар відсутній |
||||||||||||
LCB127 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
LCB127S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
LCB127STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
товар відсутній |
||||||||||||
IXFH14N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 400W Case: TO247-3 On-state resistance: 720mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXFT14N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 400W Case: TO268 On-state resistance: 720mΩ Mounting: SMD Gate charge: 61nC Kind of package: tube Kind of channel: enhanced |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
MCC162-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V Mechanical mounting: screw Gate current: 150/200mA Max. off-state voltage: 1.2kV Load current: 181A Max. forward voltage: 1.36V Max. forward impulse current: 6.48kA Case: Y4-M6 Type of module: thyristor Semiconductor structure: double series Kind of package: bulk Electrical mounting: screw |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
MCC162-14io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V Mechanical mounting: screw Gate current: 150/200mA Max. off-state voltage: 1.4kV Load current: 181A Max. forward voltage: 1.03V Max. forward impulse current: 5.1kA Case: Y4-M6 Type of module: thyristor Semiconductor structure: double series Kind of package: bulk Electrical mounting: screw |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
LOC111P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
LOC111PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A |
товар відсутній |
||||||||||||
LOC112PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A |
товар відсутній |
||||||||||||
LOC117P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
LOC117PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A |
товар відсутній |
||||||||||||
LOC112P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 3.75kV; Flatpack 8pin Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 3.75kV Case: Flatpack 8pin |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXTA80N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO263 On-state resistance: 14mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
товар відсутній |
||||||||||||
IXTP80N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO220AB On-state resistance: 14mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
товар відсутній |
||||||||||||
IXFA180N10T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO263 On-state resistance: 6mΩ Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 66ns |
товар відсутній |
||||||||||||
IXFP180N10T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 66ns |
товар відсутній |
||||||||||||
IXTA180N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO263 On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 151nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXTP180N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6.4mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns |
товар відсутній |
||||||||||||
LBA710S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1000mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
||||||||||||
LBA710STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
||||||||||||
IXYH75N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 123nC Kind of package: tube Turn-on time: 90ns Turn-off time: 179ns |
товар відсутній |
||||||||||||
IXYH75N65C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 123nC Kind of package: tube Turn-on time: 90ns Turn-off time: 179ns |
товар відсутній |
||||||||||||
IXYN75N65C3D1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W Technology: GenX3™; XPT™ Collector current: 75A Power dissipation: 600W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |
||||||||||||
MCC132-08io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 130A Case: Y4-M6 Max. forward voltage: 1.36V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
MCC132-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 130A Case: Y4-M6 Max. forward voltage: 1.36V Max. forward impulse current: 5.08kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
MCC132-14io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 130A Case: Y4-M6 Max. forward voltage: 1.36V Max. forward impulse current: 4.04kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
||||||||||||
MCC132-14IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 130A Case: Y4-M6 Max. forward voltage: 1.36V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
||||||||||||
MCC132-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 130A Case: Y4-M6 Max. forward voltage: 1.14V Max. forward impulse current: 4.75kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
MCC132-16IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 130A Case: Y4-M6 Max. forward voltage: 1.36V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
||||||||||||
MCC132-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 130A Case: Y4-M6 Max. forward voltage: 1.36V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
||||||||||||
MCC132-18IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 130A Case: Y4-M6 Max. forward voltage: 1.36V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
||||||||||||
CPC1965G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; THT Max. operating current: 1A Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 260V AC Control current max.: 100mA Mounting: THT Case: DIP4 Body dimensions: 19.2x7.62x3.3mm |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
DPF30P600HR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; ISO247™; 165W Mounting: THT Max. off-state voltage: 0.6kV Max. forward voltage: 1.27V Load current: 30A Semiconductor structure: double series Reverse recovery time: 33ns Max. forward impulse current: 200A Power dissipation: 165W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Case: ISO247™ |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
|
IXFL60N80P |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
LF2136BTR |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -350...200mA
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V
Case: SO28
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Type of integrated circuit: driver
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -350...200mA
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V
Case: SO28
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Type of integrated circuit: driver
Number of channels: 6
товар відсутній
LF2388BTR |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Number of channels: 6
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO20
Supply voltage: 10...20V
Output current: -750...420mA
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Number of channels: 6
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO20
Supply voltage: 10...20V
Output current: -750...420mA
Type of integrated circuit: driver
товар відсутній
IXFH220N20X3 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
товар відсутній
IXFK220N20X3 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1044.75 грн |
3+ | 917.27 грн |
25+ | 904.75 грн |
IXFT220N20X3HV |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Kind of package: tube
Mounting: SMD
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Kind of package: tube
Mounting: SMD
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
товар відсутній
IXFA220N06T3 |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
товар відсутній
IXFH220N06T3 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 380.45 грн |
3+ | 317.81 грн |
4+ | 240.62 грн |
10+ | 227.41 грн |
IXFP220N06T3 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
на замовлення 63 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 236.66 грн |
3+ | 194.02 грн |
5+ | 166.21 грн |
14+ | 157.17 грн |
50+ | 156.47 грн |
MCC26-08io1B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 800V
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of module: thyristor
Load current: 27A
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 800V
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of module: thyristor
Load current: 27A
товар відсутній
MCC26-08io8B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 800V
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of module: thyristor
Load current: 27A
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 800V
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of module: thyristor
Load current: 27A
товар відсутній
MCC26-12io8B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.2kV
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Max. forward impulse current: 440A
Type of module: thyristor
Load current: 27A
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.2kV
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Max. forward impulse current: 440A
Type of module: thyristor
Load current: 27A
товар відсутній
MCC26-14io1B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.65V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.65V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC26-14io8B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of module: thyristor
Load current: 27A
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of module: thyristor
Load current: 27A
товар відсутній
MCC26-16io8B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of module: thyristor
Load current: 27A
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of module: thyristor
Load current: 27A
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1563.75 грн |
2+ | 1372.78 грн |
CPC1150N |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
Mounting: SMT
On-state resistance: 50Ω
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
Mounting: SMT
On-state resistance: 50Ω
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
на замовлення 621 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 198.47 грн |
10+ | 85.54 грн |
26+ | 80.67 грн |
CPC1150NTR |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
Mounting: SMT
On-state resistance: 50Ω
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
Mounting: SMT
On-state resistance: 50Ω
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
товар відсутній
MCMA110P1200TA |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
PD2401 |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; THT
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; THT
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 198 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 683.02 грн |
3+ | 303.9 грн |
8+ | 287.21 грн |
PD2401X2 |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 6.6mA; 1000mA; max.280VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 6.6mA
Max. operating current: 1A
Switched voltage: max. 280V AC
Relay variant: 1-phase
Case: DIP16
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 10ms
Turn-off time: 10ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 6.6mA; 1000mA; max.280VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 6.6mA
Max. operating current: 1A
Switched voltage: max. 280V AC
Relay variant: 1-phase
Case: DIP16
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 10ms
Turn-off time: 10ms
товар відсутній
LDA101 |
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Case: DIP6
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Case: DIP6
товар відсутній
LDA101S |
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
товар відсутній
LDA101STR |
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
товар відсутній
IXLF19N250A |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 100ns
Turn-off time: 600ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 100ns
Turn-off time: 600ns
Features of semiconductor devices: high voltage
товар відсутній
MIXG330PF1200PTSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
товар відсутній
MIXG330PF1200TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
товар відсутній
LCB127 |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 438.87 грн |
LCB127S |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 438.87 грн |
5+ | 184.98 грн |
LCB127STR |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
IXFH14N80P |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 462.84 грн |
3+ | 308.08 грн |
8+ | 291.39 грн |
IXFT14N80P |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 504.78 грн |
3+ | 372.75 грн |
6+ | 352.58 грн |
30+ | 347.02 грн |
MCC162-12io1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Gate current: 150/200mA
Max. off-state voltage: 1.2kV
Load current: 181A
Max. forward voltage: 1.36V
Max. forward impulse current: 6.48kA
Case: Y4-M6
Type of module: thyristor
Semiconductor structure: double series
Kind of package: bulk
Electrical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Gate current: 150/200mA
Max. off-state voltage: 1.2kV
Load current: 181A
Max. forward voltage: 1.36V
Max. forward impulse current: 6.48kA
Case: Y4-M6
Type of module: thyristor
Semiconductor structure: double series
Kind of package: bulk
Electrical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4073.4 грн |
MCC162-14io1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V
Mechanical mounting: screw
Gate current: 150/200mA
Max. off-state voltage: 1.4kV
Load current: 181A
Max. forward voltage: 1.03V
Max. forward impulse current: 5.1kA
Case: Y4-M6
Type of module: thyristor
Semiconductor structure: double series
Kind of package: bulk
Electrical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V
Mechanical mounting: screw
Gate current: 150/200mA
Max. off-state voltage: 1.4kV
Load current: 181A
Max. forward voltage: 1.03V
Max. forward impulse current: 5.1kA
Case: Y4-M6
Type of module: thyristor
Semiconductor structure: double series
Kind of package: bulk
Electrical mounting: screw
на замовлення 11 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4226.18 грн |
LOC111P |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
на замовлення 198 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 205.95 грн |
5+ | 132.13 грн |
7+ | 119.61 грн |
19+ | 112.66 грн |
LOC111PTR |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
товар відсутній
LOC112PTR |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
товар відсутній
LOC117P |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 153.53 грн |
5+ | 119.61 грн |
9+ | 91.8 грн |
25+ | 86.93 грн |
LOC117PTR |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
товар відсутній
LOC112P |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 3.75kV; Flatpack 8pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 3.75kV; Flatpack 8pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Flatpack 8pin
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 374.46 грн |
IXTA80N10T |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товар відсутній
IXTP80N10T |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товар відсутній
IXFA180N10T2 |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
товар відсутній
IXFP180N10T2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
товар відсутній
IXTA180N10T |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 318.29 грн |
3+ | 266.35 грн |
4+ | 212.11 грн |
11+ | 200.28 грн |
IXTP180N10T |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
товар відсутній
LBA710S |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1000mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1000mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
LBA710STR |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
IXYH75N65C3 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
товар відсутній
IXYH75N65C3H1 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
товар відсутній
IXYN75N65C3D1 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
MCC132-08io1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3660 грн |
MCC132-12io1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Max. forward impulse current: 5.08kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Max. forward impulse current: 5.08kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3961.06 грн |
MCC132-14io1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Max. forward impulse current: 4.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Max. forward impulse current: 4.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC132-14IO1B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC132-16io1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.14V
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.14V
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4254.64 грн |
MCC132-16IO1B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC132-18io1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC132-18IO1B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 130A
Case: Y4-M6
Max. forward voltage: 1.36V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
CPC1965G |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; THT
Max. operating current: 1A
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: DIP4
Body dimensions: 19.2x7.62x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; THT
Max. operating current: 1A
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: DIP4
Body dimensions: 19.2x7.62x3.3mm
на замовлення 102 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 435.13 грн |
5+ | 187.07 грн |
12+ | 177.33 грн |
DPF30P600HR |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; ISO247™; 165W
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.27V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 33ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISO247™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; ISO247™; 165W
Mounting: THT
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.27V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 33ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISO247™
на замовлення 17 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1059.73 грн |
2+ | 703.08 грн |
4+ | 664.83 грн |