| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFT120N15P | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268 Mounting: SMD Case: TO268 Drain-source voltage: 150V Drain current: 120A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Kind of package: tube Gate charge: 150nC Technology: HiPerFET™; PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 200ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFT120N30X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268 Mounting: SMD Case: TO268 Drain-source voltage: 300V Drain current: 120A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 735W Polarisation: unipolar Kind of package: tube Gate charge: 170nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 145ns |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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FMM50-025TF | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A Polarisation: unipolar Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 84ns Drain-source voltage: 250V Drain current: 30A On-state resistance: 60mΩ Type of transistor: N-MOSFET x2 Power dissipation: 125W Kind of package: tube Gate charge: 78nC Technology: HiPerFET™; Trench Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 130A Mounting: THT |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXFN36N100 | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 36A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.24Ω Pulsed drain current: 144A Power dissipation: 694W Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 380nC Reverse recovery time: 180ns Gate-source voltage: ±30V Mechanical mounting: screw |
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| VUM85-05A | IXYS |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 130A; V2-Pack; Press-in PCB; 945nC Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 130A Case: V2-Pack Topology: 3-phase PFC Electrical mounting: Press-in PCB Polarisation: unipolar On-state resistance: 36mΩ Pulsed drain current: 520A Power dissipation: 1.38kW Gate charge: 945nC Gate-source voltage: ±20V Mechanical mounting: screw |
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IXFX420N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 2.6mΩ Mounting: THT Gate charge: 670nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXTQ50N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO3P On-state resistance: 50mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 166ns |
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CLA16E800PN | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 195A Mounting: THT Kind of package: tube Load current: 10A |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXTY1R6N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.6A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 23.7nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 400ns |
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LOC117S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
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LOC117STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
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IXDN630MYI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Supply voltage: 9...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXDN630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 236 шт: термін постачання 21-30 дні (днів) |
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| LCA125STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Operating temperature: -40...85°C Manufacturer series: OptoMOS Case: DIP6 On-state resistance: 16Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 300V AC; max. 300V DC Mounting: SMT Control current max.: 50mA |
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IXTQ470P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns Case: TO3P Mounting: THT On-state resistance: 0.145Ω Kind of package: tube Power dissipation: 830W Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 42A Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: standard power mosfet Gate charge: 88nC Kind of channel: enhanced |
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MCO150-16IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw Gate current: 150/200mA Max. forward impulse current: 2.16kA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: SOT227B Max. off-state voltage: 1.6kV Max. forward voltage: 1.78V Load current: 158A Semiconductor structure: single thyristor |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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IXTA8N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
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IXFH10N100 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 300W; TO247-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXFX80N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced |
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IXFX80N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
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IXFA72N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263 Reverse recovery time: 84ns Drain-source voltage: 200V Drain current: 72A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube Gate charge: 55nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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IXFA72N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263 Mounting: SMD Case: TO263 Polarisation: unipolar Drain-source voltage: 300V Reverse recovery time: 100ns Kind of package: tube Drain current: 72A Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W |
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IXFH70N20Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3 Drain-source voltage: 200V Drain current: 70A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhanced Mounting: THT Case: TO247-3 |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IXFH70N30Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3 Drain-source voltage: 300V Drain current: 70A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Kind of package: tube Gate charge: 98nC Kind of channel: enhanced Mounting: THT Case: TO247-3 |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IXFH72N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3 Mounting: THT Case: TO247-3 Polarisation: unipolar Drain-source voltage: 300V Reverse recovery time: 100ns Kind of package: tube Drain current: 72A Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IXFP72N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB Reverse recovery time: 84ns Drain-source voltage: 200V Drain current: 72A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube Gate charge: 55nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220AB |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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IXFP72N20X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP Reverse recovery time: 84ns Drain-source voltage: 200V Drain current: 72A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: tube Gate charge: 55nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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IXFP72N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB Mounting: THT Case: TO220AB Polarisation: unipolar Drain-source voltage: 300V Reverse recovery time: 100ns Kind of package: tube Drain current: 72A Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFP72N30X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP Mounting: THT Case: TO220FP Polarisation: unipolar Drain-source voltage: 300V Reverse recovery time: 100ns Kind of package: tube Drain current: 72A Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 36W |
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IXFQ72N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P Reverse recovery time: 84ns Drain-source voltage: 200V Drain current: 72A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube Gate charge: 55nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO3P |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IXFQ72N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P Reverse recovery time: 100ns Drain-source voltage: 300V Drain current: 72A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO3P |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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IXFT70N20Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268 Drain-source voltage: 200V Drain current: 70A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhanced Mounting: SMD Case: TO268 |
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IXFT70N30Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268 Drain-source voltage: 300V Drain current: 70A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Kind of package: tube Gate charge: 98nC Kind of channel: enhanced Mounting: SMD Case: TO268 |
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IXTA1R4N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Case: TO263 Polarisation: unipolar On-state resistance: 13Ω Type of transistor: N-MOSFET Power dissipation: 86W Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 24.8nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3A Mounting: SMD Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1.4A |
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IXTA1R6N100D2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 27nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 970ns |
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IXTH2R4N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W Case: TO247-3 Polarisation: unipolar On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 125W Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 37nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6A Mounting: THT Reverse recovery time: 920ns Drain-source voltage: 1.2kV Drain current: 2.4A |
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IXTP1R4N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Case: TO220AB Polarisation: unipolar On-state resistance: 13Ω Type of transistor: N-MOSFET Power dissipation: 86W Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 24.8nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3A Mounting: THT Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1.4A |
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IXTP2R4N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W Case: TO220AB Polarisation: unipolar On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 125W Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 37nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6A Mounting: THT Reverse recovery time: 920ns Drain-source voltage: 1.2kV Drain current: 2.4A |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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IXTQ52N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 52A Power dissipation: 400W Case: TO3P Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 237 шт: термін постачання 21-30 дні (днів) |
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IXTT52N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 52A Power dissipation: 400W Case: TO268 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXTT69N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO268 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 69A Power dissipation: 500W Case: TO268 Gate-source voltage: ±20V On-state resistance: 49mΩ Mounting: SMD Gate charge: 156nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 330ns |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXTY1R4N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Case: TO252 Polarisation: unipolar On-state resistance: 13Ω Type of transistor: N-MOSFET Power dissipation: 86W Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 24.8nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3A Mounting: SMD Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1.4A |
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IXFB300N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Power dissipation: 1.5kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 279nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| MIXG240W1200PZTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor; shunt resistor Max. off-state voltage: 1.2kV Collector current: 233A Case: E3-Pack Electrical mounting: Press-in PCB Technology: X2PT Mechanical mounting: screw |
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DMA10I1600PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; TO220AC; 100W Mounting: THT Power dissipation: 100W Kind of package: tube Type of diode: rectifying Heatsink thickness: 1.14...1.39mm Case: TO220AC Max. off-state voltage: 1.6kV Max. forward voltage: 1.21V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 120A |
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| DMA10P1200HR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 120A; ISO247™ Case: ISO247™ Mounting: THT Kind of package: tube Semiconductor structure: double series Max. off-state voltage: 1.2kV Max. forward impulse current: 120A Type of diode: rectifying Max. forward voltage: 0.81V Load current: 10A |
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DMA10P1600HR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; ISO247™ Mounting: THT Kind of package: tube Type of diode: rectifying Case: ISO247™ Max. off-state voltage: 1.6kV Load current: 10A Semiconductor structure: double series Max. forward impulse current: 120A |
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DSA10C150PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; 30W; TO220AB; tube Mounting: THT Case: TO220AB Power dissipation: 30W Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 150V Max. forward voltage: 0.71V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 150A |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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| DSA120X150LB-TRR | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 75Ax2; SMPD; reel,tape; 185W Mounting: SMD Case: SMPD Power dissipation: 185W Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 150V Max. forward voltage: 0.74V Load current: 75A x2 Semiconductor structure: double independent Max. forward impulse current: 700A |
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MCO25-12IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 32A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.2kV Load current: 32A Case: SOT227B Max. forward voltage: 1.55V Gate current: 55/80mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCO25-16IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 32A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 32A Case: SOT227B Max. forward voltage: 1.55V Gate current: 55/80mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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LCB110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Contacts configuration: SPST-NC Mounting: THT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Case: DIP6 On-state resistance: 35Ω Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Insulation voltage: 3.75kV Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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IXTP32P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB Mounting: THT Kind of package: tube Drain-source voltage: -50V Drain current: -32A On-state resistance: 39mΩ Type of transistor: P-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 46nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Case: TO220AB Reverse recovery time: 26ns |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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IXTP32P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns Mounting: THT Kind of package: tube Drain-source voltage: -200V Drain current: -32A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 185nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Case: TO220AB Reverse recovery time: 190ns |
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DPG20C200PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Mounting: THT Case: TO220AB Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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DPG20C200PN | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Mounting: THT Case: TO220FP Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 35W |
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DPG20C400PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W Mounting: THT Case: TO220AB Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 0.4kV Max. forward voltage: 1.32V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W |
на замовлення 183 шт: термін постачання 21-30 дні (днів) |
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| DPG20C400PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V Mounting: SMD Case: TO263AB Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Max. off-state voltage: 0.4kV Max. forward voltage: 1.51V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W |
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DPG20C400PN | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W Mounting: THT Case: TO220FP Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Max. off-state voltage: 0.4kV Max. forward voltage: 1.03V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 35W |
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MMIX1F40N110P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.1kV Drain current: 24A Pulsed drain current: 100A Power dissipation: 500W Case: SMPD Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 310nC Kind of channel: enhanced Reverse recovery time: 300ns |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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| IXFT120N15P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 646.8 грн |
| 2+ | 431.08 грн |
| 3+ | 430.38 грн |
| 6+ | 406.86 грн |
| IXFT120N30X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 735W
Polarisation: unipolar
Kind of package: tube
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 145ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 735W
Polarisation: unipolar
Kind of package: tube
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 145ns
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 862.9 грн |
| 3+ | 757.67 грн |
| 30+ | 743.14 грн |
| FMM50-025TF |
|
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Polarisation: unipolar
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 84ns
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 125W
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™; Trench
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Mounting: THT
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Polarisation: unipolar
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 84ns
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 125W
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™; Trench
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Mounting: THT
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1087.94 грн |
| 3+ | 954.87 грн |
| IXFN36N100 | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 380nC
Reverse recovery time: 180ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 380nC
Reverse recovery time: 180ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| VUM85-05A |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 130A; V2-Pack; Press-in PCB; 945nC
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 130A
Case: V2-Pack
Topology: 3-phase PFC
Electrical mounting: Press-in PCB
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 520A
Power dissipation: 1.38kW
Gate charge: 945nC
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 130A; V2-Pack; Press-in PCB; 945nC
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 130A
Case: V2-Pack
Topology: 3-phase PFC
Electrical mounting: Press-in PCB
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 520A
Power dissipation: 1.38kW
Gate charge: 945nC
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| IXFX420N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXTQ50N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
товар відсутній
| CLA16E800PN |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 195A
Mounting: THT
Kind of package: tube
Load current: 10A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 195A
Mounting: THT
Kind of package: tube
Load current: 10A
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.41 грн |
| 10+ | 80.26 грн |
| IXTY1R6N50D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 400ns
товар відсутній
| LOC117S |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
| LOC117STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
| IXDN630MYI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 625.94 грн |
| 2+ | 415.16 грн |
| 6+ | 393.02 грн |
| 10+ | 392.33 грн |
| IXDN630YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 236 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 593.15 грн |
| 2+ | 416.55 грн |
| 6+ | 393.71 грн |
| LCA125STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 300V AC; max. 300V DC
Mounting: SMT
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 300V AC; max. 300V DC
Mounting: SMT
Control current max.: 50mA
товар відсутній
| IXTQ470P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 42A
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 42A
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhanced
товар відсутній
| MCO150-16IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward impulse current: 2.16kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: SOT227B
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.78V
Load current: 158A
Semiconductor structure: single thyristor
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward impulse current: 2.16kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: SOT227B
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.78V
Load current: 158A
Semiconductor structure: single thyristor
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2449.35 грн |
| IXTA8N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
товар відсутній
| IXFH10N100 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXFX80N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX80N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFA72N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
на замовлення 83 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 429.21 грн |
| 3+ | 341.12 грн |
| 7+ | 322.44 грн |
| IXFA72N30X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263
Mounting: SMD
Case: TO263
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263
Mounting: SMD
Case: TO263
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
товар відсутній
| IXFH70N20Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 938.9 грн |
| 2+ | 588.84 грн |
| 4+ | 556.32 грн |
| IXFH70N30Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 996.28 грн |
| 3+ | 874.61 грн |
| IXFH72N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 714.61 грн |
| 2+ | 475.36 грн |
| 3+ | 474.67 грн |
| 5+ | 449.07 грн |
| IXFP72N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 471.69 грн |
| 3+ | 331.44 грн |
| 7+ | 313.45 грн |
| IXFP72N20X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 471.69 грн |
| 3+ | 331.44 грн |
| 7+ | 313.45 грн |
| IXFP72N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 518.63 грн |
| 3+ | 387.48 грн |
| 6+ | 366.03 грн |
| IXFP72N30X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
товар відсутній
| IXFQ72N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 522.36 грн |
| 3+ | 366.73 грн |
| 6+ | 347.35 грн |
| IXFQ72N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 665.43 грн |
| 2+ | 431.08 грн |
| 6+ | 407.55 грн |
| IXFT70N20Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
товар відсутній
| IXFT70N30Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
товар відсутній
| IXTA1R4N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO263
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO263
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
товар відсутній
| IXTA1R6N100D2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 970ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 970ns
товар відсутній
| IXTH2R4N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Case: TO247-3
Polarisation: unipolar
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 37nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Mounting: THT
Reverse recovery time: 920ns
Drain-source voltage: 1.2kV
Drain current: 2.4A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Case: TO247-3
Polarisation: unipolar
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 37nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Mounting: THT
Reverse recovery time: 920ns
Drain-source voltage: 1.2kV
Drain current: 2.4A
товар відсутній
| IXTP1R4N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO220AB
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: THT
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO220AB
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: THT
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
товар відсутній
| IXTP2R4N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Case: TO220AB
Polarisation: unipolar
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 37nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Mounting: THT
Reverse recovery time: 920ns
Drain-source voltage: 1.2kV
Drain current: 2.4A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Case: TO220AB
Polarisation: unipolar
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 37nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Mounting: THT
Reverse recovery time: 920ns
Drain-source voltage: 1.2kV
Drain current: 2.4A
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 347.25 грн |
| 3+ | 285.08 грн |
| 4+ | 257.4 грн |
| 9+ | 242.87 грн |
| 50+ | 239.41 грн |
| IXTQ52N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 237 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 380.03 грн |
| 3+ | 270.55 грн |
| 9+ | 256.02 грн |
| IXTT52N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXTT69N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 330ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 330ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 461.25 грн |
| IXTY1R4N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
товар відсутній
| IXFB300N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1812.23 грн |
| MIXG240W1200PZTEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor; shunt resistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor; shunt resistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
товар відсутній
| DMA10I1600PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; TO220AC; 100W
Mounting: THT
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; TO220AC; 100W
Mounting: THT
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
товар відсутній
| DMA10P1200HR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 120A; ISO247™
Case: ISO247™
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Max. forward impulse current: 120A
Type of diode: rectifying
Max. forward voltage: 0.81V
Load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 120A; ISO247™
Case: ISO247™
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Max. forward impulse current: 120A
Type of diode: rectifying
Max. forward voltage: 0.81V
Load current: 10A
товар відсутній
| DMA10P1600HR |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; ISO247™
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Case: ISO247™
Max. off-state voltage: 1.6kV
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; ISO247™
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Case: ISO247™
Max. off-state voltage: 1.6kV
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 120A
товар відсутній
| DSA10C150PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; 30W; TO220AB; tube
Mounting: THT
Case: TO220AB
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 150V
Max. forward voltage: 0.71V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; 30W; TO220AB; tube
Mounting: THT
Case: TO220AB
Power dissipation: 30W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 150V
Max. forward voltage: 0.71V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.19 грн |
| 10+ | 61.58 грн |
| DSA120X150LB-TRR |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 75Ax2; SMPD; reel,tape; 185W
Mounting: SMD
Case: SMPD
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.74V
Load current: 75A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 75Ax2; SMPD; reel,tape; 185W
Mounting: SMD
Case: SMPD
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.74V
Load current: 75A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
товар відсутній
| MCO25-12IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 32A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 32A
Case: SOT227B
Max. forward voltage: 1.55V
Gate current: 55/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 32A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 32A
Case: SOT227B
Max. forward voltage: 1.55V
Gate current: 55/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCO25-16IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 32A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 32A
Case: SOT227B
Max. forward voltage: 1.55V
Gate current: 55/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 32A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 32A
Case: SOT227B
Max. forward voltage: 1.55V
Gate current: 55/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| LCB110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.06 грн |
| 7+ | 125.93 грн |
| 18+ | 119.01 грн |
| IXTP32P05T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: -50V
Drain current: -32A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: TO220AB
Reverse recovery time: 26ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: -50V
Drain current: -32A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: TO220AB
Reverse recovery time: 26ns
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.93 грн |
| 4+ | 106.56 грн |
| 10+ | 85.11 грн |
| 26+ | 80.26 грн |
| IXTP32P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Kind of package: tube
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: TO220AB
Reverse recovery time: 190ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Kind of package: tube
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: TO220AB
Reverse recovery time: 190ns
товар відсутній
| DPG20C200PB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
на замовлення 113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.1 грн |
| 10+ | 83.03 грн |
| 12+ | 71.27 грн |
| 32+ | 67.12 грн |
| DPG20C200PN |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Case: TO220FP
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Mounting: THT
Case: TO220FP
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
товар відсутній
| DPG20C400PB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
на замовлення 183 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.53 грн |
| 3+ | 160.53 грн |
| 7+ | 120.4 грн |
| 19+ | 114.17 грн |
| DPG20C400PC-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
товар відсутній
| DPG20C400PN |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Mounting: THT
Case: TO220FP
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Mounting: THT
Case: TO220FP
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
товар відсутній
| MMIX1F40N110P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhanced
Reverse recovery time: 300ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3430.72 грн |