Продукція > NAVITAS SEMICONDUCTOR, INC. > Всі товари виробника NAVITAS SEMICONDUCTOR, INC. (666) > Сторінка 4 з 12
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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GBPC3501W | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1P 100V 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 586 шт: термін постачання 21-31 дні (днів) |
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GBPC3502T | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1P 200V 35A GBPC-TPackaging: Bulk Package / Case: 4-Square, GBPC-T Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-T Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
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GBPC3504T | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1P 400V 35A GBPC-TPackaging: Bulk Package / Case: 4-Square, GBPC-T Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-T Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 508 шт: термін постачання 21-31 дні (днів) |
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GBPC3504W | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1P 400V 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1646 шт: термін постачання 21-31 дні (днів) |
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| GBPC3508T | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 800V 35A GBPC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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GBPC3510T | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 35A GBPCPackaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
| GBPC5004T | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 400V 50A GBPCPackaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||
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GBPC5004W | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1P 400V 50A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
| GBPC5008T | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 800V 50A GBPCPackaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||
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GBPC5008W | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1P 800V 50A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
| GBPC5010T | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 50A GBPCPackaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||
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GBPC5010W | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1P 1KV 50A GBPC-W |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
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GBU10A | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 50V 10A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 167 шт: термін постачання 21-31 дні (днів) |
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GBU10B | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 100V 10A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 7450 шт: термін постачання 21-31 дні (днів) |
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GBU10D | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 200V 10A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 5875 шт: термін постачання 21-31 дні (днів) |
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GBU10G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 400V 10A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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GBU10J | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 10A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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GBU10K | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 800V 10A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
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GBU10M | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 10A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 7478 шт: термін постачання 21-31 дні (днів) |
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| GBU15A | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 50V 15A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBU15B | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 100V 15A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBU15D | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 200V 15A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBU15G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 400V 15A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBU15J | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 15A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| GBU15K | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 800V 15A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| GBU15M | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 15A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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GBU4A | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 50V 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 417 шт: термін постачання 21-31 дні (днів) |
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GBU4G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 400V 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1704 шт: термін постачання 21-31 дні (днів) |
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| GBU4J | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| GBU4K | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 800V 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBU4M | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 4A GBU |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||
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GBU6J | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 6A GBU |
на замовлення 5458 шт: термін постачання 21-31 дні (днів) |
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| GBU6M | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 6A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
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GBU8D | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 200V 8A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 4834 шт: термін постачання 21-31 дні (днів) |
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GBU8G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 400V 8A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 742 шт: термін постачання 21-31 дні (днів) |
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GBU8J | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 8A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 6309 шт: термін постачання 21-31 дні (днів) |
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| GBU8K | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 800V 8A GBU |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
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GD20MPS12H | Navitas Semiconductor, Inc. |
Description: DIODE SIL CARB 1200V 39A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 737pF @ 1V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
на замовлення 1935 шт: термін постачання 21-31 дні (днів) |
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GD25MPS17H | Navitas Semiconductor, Inc. |
Description: DIODE SIL CARB 1700V 56A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1083pF @ 1V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
на замовлення 1152 шт: термін постачання 21-31 дні (днів) |
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GD2X150MPS06N | Navitas Semiconductor, Inc. |
Description: DIODE MOD SIC 650V 150A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 150A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A Current - Reverse Leakage @ Vr: 10 µA @ 650 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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GD2X25MPS17N | Navitas Semiconductor, Inc. |
Description: DIODE MOD SIC 1700V 50A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
на замовлення 145 шт: термін постачання 21-31 дні (днів) |
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GD2X30MPS12N | Navitas Semiconductor, Inc. |
Description: DIODE MOD SIC 1200V 52A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 52A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V |
на замовлення 183 шт: термін постачання 21-31 дні (днів) |
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GD2X50MPS12N | Navitas Semiconductor, Inc. |
Description: DIODE MOD SIC 1200V 76A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 76A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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GD2X75MPS17N | Navitas Semiconductor, Inc. |
Description: DIODE MOD SIC 1700V 115A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 115A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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GD30MPS12H | Navitas Semiconductor, Inc. |
Description: DIODE SIL CARB 1200V 55A TO247-2 |
на замовлення 520 шт: термін постачання 21-31 дні (днів) |
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GE04MPS06E-TR | Navitas Semiconductor, Inc. |
Description: DIODE SIL CARB 650V 12A TO252-2 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
GE04MPS06E-TR | Navitas Semiconductor, Inc. |
Description: DIODE SIL CARB 650V 12A TO252-2 |
на замовлення 2435 шт: термін постачання 21-31 дні (днів) |
|
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GE06MPS06E-TR | Navitas Semiconductor, Inc. | Description: 650V 6A TO-252-2 SIC SCHOTTKY MP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
GE06MPS06E-TR | Navitas Semiconductor, Inc. | Description: 650V 6A TO-252-2 SIC SCHOTTKY MP |
на замовлення 2465 шт: термін постачання 21-31 дні (днів) |
|
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GE08MPS06E-TR | Navitas Semiconductor, Inc. | Description: 650V 8A TO-252-2 SIC SCHOTTKY MP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
GE08MPS06E-TR | Navitas Semiconductor, Inc. | Description: 650V 8A TO-252-2 SIC SCHOTTKY MP |
на замовлення 2435 шт: термін постачання 21-31 дні (днів) |
|
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| GE12MPS06E-TR | Navitas Semiconductor, Inc. | Description: 650V 12A TO-252-2 SIC SCHOTTKY M |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
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| GE12MPS06E-TR | Navitas Semiconductor, Inc. | Description: 650V 12A TO-252-2 SIC SCHOTTKY M |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| KBJ2506G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 25A KBJPackaging: Bulk Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: KBJ Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| KBJ2510G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 25A KBJPackaging: Bulk Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: KBJ Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| KBJ4005G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 50V 4A KBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KBJ401G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 100V 4A KBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KBJ402G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 200V 4A KBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KBJ404G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 400V 4A KBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KBJ406G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 4A KBJ |
товару немає в наявності |
В кошику од. на суму грн. |
| GBPC3501W |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 586 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 450.69 грн |
| 10+ | 291.27 грн |
| 50+ | 229.82 грн |
| 100+ | 197.14 грн |
| 500+ | 164.68 грн |
| GBPC3502T |
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Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 200V 35A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1P 200V 35A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 478.13 грн |
| 10+ | 308.71 грн |
| 50+ | 243.61 грн |
| 100+ | 208.97 грн |
| GBPC3504T |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 400V 35A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 35A GBPC-T
Packaging: Bulk
Package / Case: 4-Square, GBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-T
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 508 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 478.13 грн |
| 10+ | 308.71 грн |
| 50+ | 243.61 грн |
| 100+ | 208.97 грн |
| 500+ | 174.56 грн |
| GBPC3504W |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1646 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 450.69 грн |
| 10+ | 291.27 грн |
| 50+ | 229.82 грн |
| 100+ | 197.14 грн |
| 500+ | 164.68 грн |
| GBPC3508T |
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Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 35A GBPC
Description: BRIDGE RECT 1PHASE 800V 35A GBPC
товару немає в наявності
В кошику
од. на суму грн.
| GBPC3510T |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| GBPC5004T |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| GBPC5004W |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 400V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| GBPC5008T |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| GBPC5008W |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 800V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| GBPC5010T |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| GBPC5010W |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 50A GBPC-W
Description: BRIDGE RECT 1P 1KV 50A GBPC-W
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| GBU10A |
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Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.22 грн |
| 10+ | 88.39 грн |
| 50+ | 66.59 грн |
| 100+ | 55.91 грн |
| GBU10B |
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Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 7450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.84 грн |
| 10+ | 93.67 грн |
| 50+ | 70.59 грн |
| 100+ | 59.27 грн |
| 500+ | 47.01 грн |
| GBU10D |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.84 грн |
| 10+ | 93.67 грн |
| 50+ | 70.59 грн |
| 100+ | 59.27 грн |
| 500+ | 47.01 грн |
| GBU10G |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.22 грн |
| 10+ | 88.39 грн |
| 50+ | 66.59 грн |
| 100+ | 55.91 грн |
| 500+ | 44.35 грн |
| GBU10J |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU10K |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.22 грн |
| 10+ | 88.39 грн |
| 50+ | 66.59 грн |
| 100+ | 55.91 грн |
| GBU10M |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 7478 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.71 грн |
| 10+ | 91.71 грн |
| 50+ | 69.11 грн |
| 100+ | 58.03 грн |
| 500+ | 46.02 грн |
| GBU15A |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU15B |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU15D |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU15G |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU15J |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| GBU15K |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| GBU15M |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU4A |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.95 грн |
| 10+ | 66.50 грн |
| 100+ | 44.41 грн |
| GBU4G |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1704 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.95 грн |
| 10+ | 66.50 грн |
| 100+ | 44.41 грн |
| 500+ | 32.80 грн |
| 1000+ | 29.94 грн |
| GBU4J |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| GBU4K |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU4M |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| GBU6J |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 6A GBU
Description: BRIDGE RECT 1PHASE 600V 6A GBU
на замовлення 5458 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.17 грн |
| 10+ | 83.93 грн |
| 50+ | 63.07 грн |
| 100+ | 52.86 грн |
| 500+ | 41.77 грн |
| GBU6M |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| GBU8D |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4834 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.17 грн |
| 10+ | 84.23 грн |
| 50+ | 63.37 грн |
| 100+ | 53.16 грн |
| 500+ | 42.08 грн |
| GBU8G |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.17 грн |
| 10+ | 84.23 грн |
| 50+ | 63.37 грн |
| 100+ | 53.16 грн |
| 500+ | 42.08 грн |
| GBU8J |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 6309 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.03 грн |
| 10+ | 82.42 грн |
| 50+ | 62.04 грн |
| 100+ | 52.05 грн |
| 500+ | 41.20 грн |
| GBU8K |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 8A GBU
Description: BRIDGE RECT 1PHASE 800V 8A GBU
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| GD20MPS12H |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 1200V 39A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE SIL CARB 1200V 39A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 1935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 754.81 грн |
| 30+ | 431.91 грн |
| 120+ | 367.16 грн |
| 510+ | 300.07 грн |
| 1020+ | 295.14 грн |
| GD25MPS17H |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 1700V 56A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1083pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1700V 56A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1083pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 1152 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1551.95 грн |
| 10+ | 1197.62 грн |
| 30+ | 1110.72 грн |
| 120+ | 969.64 грн |
| 270+ | 938.52 грн |
| 510+ | 918.62 грн |
| GD2X150MPS06N |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4530.45 грн |
| 10+ | 3360.15 грн |
| GD2X25MPS17N |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4027.24 грн |
| 10+ | 2952.26 грн |
| 100+ | 2628.11 грн |
| GD2X30MPS12N |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SIC 1200V 52A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Description: DIODE MOD SIC 1200V 52A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2848.38 грн |
| 10+ | 2045.69 грн |
| 100+ | 1714.23 грн |
| GD2X50MPS12N |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3739.58 грн |
| 10+ | 2729.45 грн |
| 100+ | 2399.74 грн |
| GD2X75MPS17N |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SIC 1700V 115A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 115A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Description: DIODE MOD SIC 1700V 115A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 115A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7947.10 грн |
| 10+ | 6056.32 грн |
| GD30MPS12H |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 1200V 55A TO247-2
Description: DIODE SIL CARB 1200V 55A TO247-2
на замовлення 520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1133.40 грн |
| 30+ | 667.66 грн |
| 60+ | 617.24 грн |
| 120+ | 539.48 грн |
| 510+ | 491.06 грн |
| GE04MPS06E-TR |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 650V 12A TO252-2
Description: DIODE SIL CARB 650V 12A TO252-2
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GE04MPS06E-TR |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 650V 12A TO252-2
Description: DIODE SIL CARB 650V 12A TO252-2
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.47 грн |
| 10+ | 155.56 грн |
| 50+ | 119.53 грн |
| 100+ | 101.28 грн |
| 500+ | 82.21 грн |
| GE06MPS06E-TR |
Виробник: Navitas Semiconductor, Inc.
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GE06MPS06E-TR |
Виробник: Navitas Semiconductor, Inc.
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.55 грн |
| 10+ | 134.05 грн |
| 25+ | 122.67 грн |
| 100+ | 103.32 грн |
| 250+ | 97.70 грн |
| 500+ | 96.58 грн |
| GE08MPS06E-TR |
Виробник: Navitas Semiconductor, Inc.
Description: 650V 8A TO-252-2 SIC SCHOTTKY MP
Description: 650V 8A TO-252-2 SIC SCHOTTKY MP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GE08MPS06E-TR |
Виробник: Navitas Semiconductor, Inc.
Description: 650V 8A TO-252-2 SIC SCHOTTKY MP
Description: 650V 8A TO-252-2 SIC SCHOTTKY MP
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.58 грн |
| 10+ | 168.62 грн |
| 25+ | 154.61 грн |
| 100+ | 130.61 грн |
| 250+ | 123.70 грн |
| 500+ | 123.17 грн |
| GE12MPS06E-TR |
Виробник: Navitas Semiconductor, Inc.
Description: 650V 12A TO-252-2 SIC SCHOTTKY M
Description: 650V 12A TO-252-2 SIC SCHOTTKY M
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.58 грн |
| 10+ | 213.15 грн |
| 25+ | 196.12 грн |
| 100+ | 166.47 грн |
| 250+ | 159.28 грн |
| GE12MPS06E-TR |
Виробник: Navitas Semiconductor, Inc.
Description: 650V 12A TO-252-2 SIC SCHOTTKY M
Description: 650V 12A TO-252-2 SIC SCHOTTKY M
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 159.88 грн |
| KBJ2506G |
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Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 25A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 25A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| KBJ2510G |
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Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 25A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 25A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| KBJ4005G |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 4A KBJ
Description: BRIDGE RECT 1PHASE 50V 4A KBJ
товару немає в наявності
В кошику
од. на суму грн.
| KBJ401G |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 4A KBJ
Description: BRIDGE RECT 1PHASE 100V 4A KBJ
товару немає в наявності
В кошику
од. на суму грн.
| KBJ402G |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 4A KBJ
Description: BRIDGE RECT 1PHASE 200V 4A KBJ
товару немає в наявності
В кошику
од. на суму грн.
| KBJ404G |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 4A KBJ
Description: BRIDGE RECT 1PHASE 400V 4A KBJ
товару немає в наявності
В кошику
од. на суму грн.
| KBJ406G |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 4A KBJ
Description: BRIDGE RECT 1PHASE 600V 4A KBJ
товару немає в наявності
В кошику
од. на суму грн.















