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Фото Назва Виробник Інформація Доступність
Ціна
NC7S00M5X NC7S00M5X ONSEMI pVersion=0046&contRep=ZT&docId=E20E10D535325FF1A303005056AB0C4F&compId=NC7S00.pdf?ci_sign=d213659bda1b21f66750e3b7f0b7a7ba83657ac3 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 14119 шт:
термін постачання 21-30 дні (днів)
50+8.55 грн
76+5.24 грн
100+4.33 грн
500+2.86 грн
1000+2.44 грн
3000+2.38 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BC847BPDW1T1G BC847BPDW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78687EF0A12A8C745&compId=BC846BPDW1.PDF?ci_sign=5f728f1077a5286806fff421861d1d4229d18ac7 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
на замовлення 6296 шт:
термін постачання 21-30 дні (днів)
42+10.26 грн
55+7.30 грн
68+5.90 грн
100+4.20 грн
500+2.87 грн
1000+2.48 грн
3000+1.99 грн
6000+1.77 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BC847BPDW1T2G BC847BPDW1T2G ONSEMI bc846bpdw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
на замовлення 2343 шт:
термін постачання 21-30 дні (днів)
36+11.97 грн
44+9.21 грн
50+8.09 грн
72+5.54 грн
100+4.67 грн
500+3.19 грн
1000+2.75 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
LM385D-2.5G LM385D-2.5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; SO8; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±3%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
на замовлення 419 шт:
термін постачання 21-30 дні (днів)
5+88.03 грн
10+47.30 грн
25+37.85 грн
98+29.05 грн
196+26.98 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC14060BDG MC14060BDG ONSEMI mc14060b-d.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Kind of integrated circuit: 14bit; binary counter; oscillator
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
13+35.04 грн
17+23.73 грн
25+22.86 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC74VHC245DWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632F86181C0D3&compId=MC74VHC245-D.pdf?ci_sign=8f46e63f56500902234aa60f5bc71766d37123d0 Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: tube
Family: VHC
Manufacturer series: VHC
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MC74VHC245DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63310D0BC00D3&compId=MC74VHC245-D.pdf?ci_sign=fb12323407bb26f3fd56314a4f599d954993c6a5 Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
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В кошику  од. на суму  грн.
DF04M DF04M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B01887CA95C748&compId=DF005-10m.pdf?ci_sign=a2ba58420bf47aec9f9d95208f646afa11972b67 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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LP2951CD-3.3R2G LP2951CD-3.3R2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CDFF868D32340D6&compId=LP2950-LP2951.PDF?ci_sign=6c54cd88bdc80eadf3b37b607c70e87b897a8968 description Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.25...29V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
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LP2951CDR2G LP2951CDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CDFF868D32340D6&compId=LP2950-LP2951.PDF?ci_sign=6c54cd88bdc80eadf3b37b607c70e87b897a8968 Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 1.235...30V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...30V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
13+34.19 грн
19+21.82 грн
25+19.76 грн
100+16.98 грн
250+15.24 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC33164D-3G MC33164D-3G ONSEMI mc34164-d.pdf description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Case: SO8
Active logical level: low
Mounting: SMD
Kind of RESET output: open collector
Kind of package: tube
Operating temperature: -40...125°C
DC supply current: 32µA
Maximum output current: 30mA
Number of channels: 1
Supply voltage: 1...10V DC
Threshold on-voltage: 2.71V
Kind of integrated circuit: power on reset monitor (PoR)
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FCH041N60E ONSEMI FCH041N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
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FCH041N60F ONSEMI fch041n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
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N93C66BT3ETAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463CA0D5&compId=N93C66-D.pdf?ci_sign=5bfc5f3b461027748308ee75b851e77d40bd8319 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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CAT93C66VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC2A80D5&compId=CAT93C66-D.pdf?ci_sign=62340b4ea56cede7d50c60a2d7d456979d20b519 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84640D5&compId=CAV93C66-D.pdf?ci_sign=fdc1a4f7244adc48067537289d1ddd3a53af0f16 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D254619A0D5&compId=CAV93C66-D.pdf?ci_sign=76dd9bab943e54597fe97188e4e39078a79fc13a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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BC817-40WT1G BC817-40WT1G ONSEMI bc817-40w-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2714 шт:
термін постачання 21-30 дні (днів)
46+9.40 грн
57+6.98 грн
65+6.11 грн
93+4.29 грн
109+3.65 грн
500+2.57 грн
1000+2.24 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
SBC817-40LT1G SBC817-40LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 523 шт:
термін постачання 21-30 дні (днів)
36+11.97 грн
53+7.54 грн
74+5.38 грн
100+4.64 грн
500+3.38 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SBC817-40LT3G SBC817-40LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTHL040N120SC1 NTHL040N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEB6CE3B7C60C7&compId=NTHL040N120SC1.PDF?ci_sign=d6a134f46763306b2ba210f070ef926d26e4738a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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NV24C08DWVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E09986880D5&compId=NV24C08LV-D.pdf?ci_sign=aa04e71618ee0a203eb7a9fbf4d8658992d37065 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C08MUW3VLTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E099869C0D5&compId=NV24C08LV-D.pdf?ci_sign=c8b0d0c540cb247cb139088583ed42ea03f90e66 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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CAT24C08TDI-GT3 CAT24C08TDI-GT3 ONSEMI cat24c01-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08WI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F7EE0D5&compId=CAT24C01-D.pdf?ci_sign=46a42641710b71c2fcfd2ae05195588ed1e8df2a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C6EEE0D5&compId=CAT24C01-D.pdf?ci_sign=dc022616d0264b9aed6a4f2359dd03f1ada8c8ef Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAV24C08WE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F3C20D5&compId=CAV24C02-D.pdf?ci_sign=adf57943e5db8a33148ce032b20162ec6b7ad8ed Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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CAV24C08YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D4A9FC580D5&compId=CAV24C02-D.pdf?ci_sign=f5d100d5e3b6ff0aaa6d41f1bd1431624c05e0f3 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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FDMC6675BZ ONSEMI fdmc6675bz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
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BCP56T3G BCP56T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
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BC846CLT1G BC846CLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1580 шт:
термін постачання 21-30 дні (днів)
72+5.98 грн
105+3.81 грн
164+2.42 грн
200+2.13 грн
500+1.80 грн
1000+1.60 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
NTB25P06T4G ONSEMI ntb25p06-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Gate-source voltage: ±15V
Power dissipation: 120W
Case: D2PAK
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В кошику  од. на суму  грн.
BAT54AWT1G BAT54AWT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF616901649820&compId=BAT54AW.pdf?ci_sign=76561270fe758847454412dd3bd86394d5fc0e0f Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 7159 шт:
термін постачання 21-30 дні (днів)
72+5.98 грн
120+3.33 грн
148+2.70 грн
162+2.46 грн
1000+1.82 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
SBAT54ALT1G SBAT54ALT1G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
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SBAT54ALT3G SBAT54ALT3G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
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SBAT54AWT1G SBAT54AWT1G ONSEMI bat54awt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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BC857CWT1G BC857CWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 12317 шт:
термін постачання 21-30 дні (днів)
72+5.98 грн
99+4.05 грн
158+2.52 грн
194+2.06 грн
500+1.37 грн
1000+1.21 грн
1500+1.17 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
SBC857CLT1G SBC857CLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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В кошику  од. на суму  грн.
NV24C04DTVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463DE0D5&compId=NV24C04LV-D.pdf?ci_sign=f5e48c473d33e7f8902299d0c4efa3b6c35e08d7 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C04MUW3VLTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E09986740D5&compId=NV24C04LV-D.pdf?ci_sign=b193ec2711f05ba209565b475763265bbb037a4d Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
CAV24C04WE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC30C0D5&compId=CAV24C02-D.pdf?ci_sign=3c1ba3c5aae13c45afbaa66f43ea3feb7473c12d Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
CAV24C04YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC3200D5&compId=CAV24C02-D.pdf?ci_sign=aaf3704f47e663568e02b21318e2f4fa2d21e938 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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BC856BWT1G BC856BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2096 шт:
термін постачання 21-30 дні (днів)
50+8.55 грн
74+5.40 грн
91+4.36 грн
159+2.51 грн
198+2.01 грн
1500+1.29 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SBC856BDW1T1G SBC856BDW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D06232CA861820&compId=BC85xBDW1T1.pdf?ci_sign=125a474811ec833921617ecc2553fd1202e9ad15 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2350 шт:
термін постачання 21-30 дні (днів)
39+11.11 грн
65+6.11 грн
100+3.98 грн
500+3.10 грн
1000+2.82 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SBC856BDW1T3G SBC856BDW1T3G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC856BLT1G SBC856BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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В кошику  од. на суму  грн.
SBC856BWT1G SBC856BWT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D04A9CC7233820&compId=BC85xBWT1.pdf?ci_sign=6e0765da833922d878ef79c21486168c0e08b8cb Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 735 шт:
термін постачання 21-30 дні (днів)
50+8.55 грн
72+5.56 грн
90+4.44 грн
159+2.51 грн
199+2.00 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NCS20071SN2T1G NCS20071SN2T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EFB6F38BB240C7&compId=NCS20071_2_4.PDF?ci_sign=5caef09ea2a98993b5dc9652b8628ec870ef2450 Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail output
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 4.5mV
Number of channels: 1
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
на замовлення 2346 шт:
термін постачання 21-30 дні (днів)
12+38.46 грн
16+25.32 грн
25+23.41 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NV24C16DTVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CCC0D5&compId=NV24C16LV-D.pdf?ci_sign=700776b599b431924d8e6cd07138c6ce569e7de9 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
NV24C16DWVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CE00D5&compId=NV24C16LV-D.pdf?ci_sign=7f1efbda3124713aa8f91c4e1d3c54537b236c4b Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
NV24C16MUW3VLTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CF40D5&compId=NV24C16LV-D.pdf?ci_sign=67b575555c0d2739b6f85577c47584ce1e2780b5 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NV24C16SNVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D080D5&compId=NV24C16LV-D.pdf?ci_sign=7b087325c37cd9902aba8e7080a42ead6acdefcb Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
NV24C16UVLT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D1C0D5&compId=NV24C16LV-D.pdf?ci_sign=ab083a61992d8dbec00eb97ad21b590ba0996bea Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
MMBTA64LT1G MMBTA64LT1G ONSEMI mmbta63lt1-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: Darlington
на замовлення 749 шт:
термін постачання 21-30 дні (днів)
46+9.40 грн
57+7.06 грн
84+4.76 грн
101+3.94 грн
500+2.60 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BZX84C15LT1G BZX84C15LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 50nA
на замовлення 20441 шт:
термін постачання 21-30 дні (днів)
63+6.84 грн
105+3.81 грн
165+2.41 грн
200+1.98 грн
500+1.33 грн
1000+1.19 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MM74HCT138MTC MM74HCT138MTC ONSEMI ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 160µA
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
8+56.41 грн
11+36.74 грн
25+35.55 грн
28+33.33 грн
77+31.51 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FQD3P50TM FQD3P50TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819951B2E4A3E259&compId=FQD3P50.pdf?ci_sign=a950cf6ebbbe597ca1a787d914f57d7b13e525c5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 760 шт:
термін постачання 21-30 дні (днів)
5+99.99 грн
10+65.87 грн
25+58.73 грн
50+53.97 грн
100+49.20 грн
250+48.41 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
1N5361BG 1N5361BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: bulk
на замовлення 397 шт:
термін постачання 21-30 дні (днів)
16+28.20 грн
20+20.00 грн
23+17.54 грн
50+13.09 грн
100+12.54 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MMBT5087LT1G MMBT5087LT1G ONSEMI mmbt5087lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
на замовлення 2028 шт:
термін постачання 21-30 дні (днів)
42+10.26 грн
55+7.30 грн
81+4.95 грн
100+4.14 грн
500+2.78 грн
1000+2.38 грн
1500+2.18 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BC857BWT1G
+1
 		BC857BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
50+8.55 грн
82+4.84 грн
136+2.94 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NC7S00M5X pVersion=0046&contRep=ZT&docId=E20E10D535325FF1A303005056AB0C4F&compId=NC7S00.pdf?ci_sign=d213659bda1b21f66750e3b7f0b7a7ba83657ac3
NC7S00M5X
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 14119 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.55 грн
76+5.24 грн
100+4.33 грн
500+2.86 грн
1000+2.44 грн
3000+2.38 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BC847BPDW1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78687EF0A12A8C745&compId=BC846BPDW1.PDF?ci_sign=5f728f1077a5286806fff421861d1d4229d18ac7
BC847BPDW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
на замовлення 6296 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.26 грн
55+7.30 грн
68+5.90 грн
100+4.20 грн
500+2.87 грн
1000+2.48 грн
3000+1.99 грн
6000+1.77 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BC847BPDW1T2G bc846bpdw1t1-d.pdf
BC847BPDW1T2G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
на замовлення 2343 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.97 грн
44+9.21 грн
50+8.09 грн
72+5.54 грн
100+4.67 грн
500+3.19 грн
1000+2.75 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
LM385D-2.5G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b
LM385D-2.5G
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; SO8; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±3%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
на замовлення 419 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+88.03 грн
10+47.30 грн
25+37.85 грн
98+29.05 грн
196+26.98 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC14060BDG mc14060b-d.pdf
MC14060BDG
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Kind of integrated circuit: 14bit; binary counter; oscillator
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+35.04 грн
17+23.73 грн
25+22.86 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC74VHC245DWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632F86181C0D3&compId=MC74VHC245-D.pdf?ci_sign=8f46e63f56500902234aa60f5bc71766d37123d0
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: tube
Family: VHC
Manufacturer series: VHC
товару немає в наявності
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MC74VHC245DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63310D0BC00D3&compId=MC74VHC245-D.pdf?ci_sign=fb12323407bb26f3fd56314a4f599d954993c6a5
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
товару немає в наявності
В кошику  од. на суму  грн.
DF04M pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B01887CA95C748&compId=DF005-10m.pdf?ci_sign=a2ba58420bf47aec9f9d95208f646afa11972b67
DF04M
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
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LP2951CD-3.3R2G description pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CDFF868D32340D6&compId=LP2950-LP2951.PDF?ci_sign=6c54cd88bdc80eadf3b37b607c70e87b897a8968
LP2951CD-3.3R2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.25...29V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
товару немає в наявності
В кошику  од. на суму  грн.
LP2951CDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9CDFF868D32340D6&compId=LP2950-LP2951.PDF?ci_sign=6c54cd88bdc80eadf3b37b607c70e87b897a8968
LP2951CDR2G
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 1.235...30V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...30V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.19 грн
19+21.82 грн
25+19.76 грн
100+16.98 грн
250+15.24 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC33164D-3G description mc34164-d.pdf
MC33164D-3G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Case: SO8
Active logical level: low
Mounting: SMD
Kind of RESET output: open collector
Kind of package: tube
Operating temperature: -40...125°C
DC supply current: 32µA
Maximum output current: 30mA
Number of channels: 1
Supply voltage: 1...10V DC
Threshold on-voltage: 2.71V
Kind of integrated circuit: power on reset monitor (PoR)
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FCH041N60E FCH041N60E-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
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В кошику  од. на суму  грн.
FCH041N60F fch041n60f-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
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N93C66BT3ETAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463CA0D5&compId=N93C66-D.pdf?ci_sign=5bfc5f3b461027748308ee75b851e77d40bd8319
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
CAT93C66VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC2A80D5&compId=CAT93C66-D.pdf?ci_sign=62340b4ea56cede7d50c60a2d7d456979d20b519
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
CAV93C66VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84640D5&compId=CAV93C66-D.pdf?ci_sign=fdc1a4f7244adc48067537289d1ddd3a53af0f16
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D254619A0D5&compId=CAV93C66-D.pdf?ci_sign=76dd9bab943e54597fe97188e4e39078a79fc13a
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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BC817-40WT1G bc817-40w-d.pdf
BC817-40WT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2714 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.40 грн
57+6.98 грн
65+6.11 грн
93+4.29 грн
109+3.65 грн
500+2.57 грн
1000+2.24 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
SBC817-40LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e
SBC817-40LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 523 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.97 грн
53+7.54 грн
74+5.38 грн
100+4.64 грн
500+3.38 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SBC817-40LT3G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e
SBC817-40LT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTHL040N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEB6CE3B7C60C7&compId=NTHL040N120SC1.PDF?ci_sign=d6a134f46763306b2ba210f070ef926d26e4738a
NTHL040N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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NV24C08DWVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E09986880D5&compId=NV24C08LV-D.pdf?ci_sign=aa04e71618ee0a203eb7a9fbf4d8658992d37065
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C08MUW3VLTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E099869C0D5&compId=NV24C08LV-D.pdf?ci_sign=c8b0d0c540cb247cb139088583ed42ea03f90e66
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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CAT24C08TDI-GT3 cat24c01-d.pdf
CAT24C08TDI-GT3
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08WI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F7EE0D5&compId=CAT24C01-D.pdf?ci_sign=46a42641710b71c2fcfd2ae05195588ed1e8df2a
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C6EEE0D5&compId=CAT24C01-D.pdf?ci_sign=dc022616d0264b9aed6a4f2359dd03f1ada8c8ef
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
CAV24C08WE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F3C20D5&compId=CAV24C02-D.pdf?ci_sign=adf57943e5db8a33148ce032b20162ec6b7ad8ed
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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В кошику  од. на суму  грн.
CAV24C08YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D4A9FC580D5&compId=CAV24C02-D.pdf?ci_sign=f5d100d5e3b6ff0aaa6d41f1bd1431624c05e0f3
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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FDMC6675BZ fdmc6675bz-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
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BCP56T3G bcp56t1-d.pdf
BCP56T3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
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BC846CLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1
BC846CLT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1580 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+5.98 грн
105+3.81 грн
164+2.42 грн
200+2.13 грн
500+1.80 грн
1000+1.60 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
NTB25P06T4G ntb25p06-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Gate-source voltage: ±15V
Power dissipation: 120W
Case: D2PAK
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BAT54AWT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF616901649820&compId=BAT54AW.pdf?ci_sign=76561270fe758847454412dd3bd86394d5fc0e0f
BAT54AWT1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 7159 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+5.98 грн
120+3.33 грн
148+2.70 грн
162+2.46 грн
1000+1.82 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
SBAT54ALT1G bat54alt1-d.pdf
SBAT54ALT1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
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В кошику  од. на суму  грн.
SBAT54ALT3G bat54alt1-d.pdf
SBAT54ALT3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
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В кошику  од. на суму  грн.
SBAT54AWT1G bat54awt1-d.pdf
SBAT54AWT1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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В кошику  од. на суму  грн.
BC857CWT1G bc856bwt1-d.pdf
BC857CWT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 12317 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+5.98 грн
99+4.05 грн
158+2.52 грн
194+2.06 грн
500+1.37 грн
1000+1.21 грн
1500+1.17 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
SBC857CLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
SBC857CLT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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В кошику  од. на суму  грн.
NV24C04DTVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463DE0D5&compId=NV24C04LV-D.pdf?ci_sign=f5e48c473d33e7f8902299d0c4efa3b6c35e08d7
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C04MUW3VLTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E09986740D5&compId=NV24C04LV-D.pdf?ci_sign=b193ec2711f05ba209565b475763265bbb037a4d
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CAV24C04WE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC30C0D5&compId=CAV24C02-D.pdf?ci_sign=3c1ba3c5aae13c45afbaa66f43ea3feb7473c12d
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CAV24C04YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC3200D5&compId=CAV24C02-D.pdf?ci_sign=aaf3704f47e663568e02b21318e2f4fa2d21e938
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
товару немає в наявності
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BC856BWT1G bc856bwt1-d.pdf
BC856BWT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2096 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.55 грн
74+5.40 грн
91+4.36 грн
159+2.51 грн
198+2.01 грн
1500+1.29 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SBC856BDW1T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D06232CA861820&compId=BC85xBDW1T1.pdf?ci_sign=125a474811ec833921617ecc2553fd1202e9ad15
SBC856BDW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2350 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.11 грн
65+6.11 грн
100+3.98 грн
500+3.10 грн
1000+2.82 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SBC856BDW1T3G bc856bdw1t1-d.pdf
SBC856BDW1T3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC856BLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
SBC856BLT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
SBC856BWT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D04A9CC7233820&compId=BC85xBWT1.pdf?ci_sign=6e0765da833922d878ef79c21486168c0e08b8cb
SBC856BWT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 735 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.55 грн
72+5.56 грн
90+4.44 грн
159+2.51 грн
199+2.00 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NCS20071SN2T1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EFB6F38BB240C7&compId=NCS20071_2_4.PDF?ci_sign=5caef09ea2a98993b5dc9652b8628ec870ef2450
NCS20071SN2T1G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail output
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 4.5mV
Number of channels: 1
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
на замовлення 2346 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+38.46 грн
16+25.32 грн
25+23.41 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NV24C16DTVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CCC0D5&compId=NV24C16LV-D.pdf?ci_sign=700776b599b431924d8e6cd07138c6ce569e7de9
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NV24C16DWVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CE00D5&compId=NV24C16LV-D.pdf?ci_sign=7f1efbda3124713aa8f91c4e1d3c54537b236c4b
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
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NV24C16MUW3VLTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CF40D5&compId=NV24C16LV-D.pdf?ci_sign=67b575555c0d2739b6f85577c47584ce1e2780b5
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16SNVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D080D5&compId=NV24C16LV-D.pdf?ci_sign=7b087325c37cd9902aba8e7080a42ead6acdefcb
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16UVLT2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D1C0D5&compId=NV24C16LV-D.pdf?ci_sign=ab083a61992d8dbec00eb97ad21b590ba0996bea
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
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MMBTA64LT1G mmbta63lt1-d.pdf
MMBTA64LT1G
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: Darlington
на замовлення 749 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.40 грн
57+7.06 грн
84+4.76 грн
101+3.94 грн
500+2.60 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BZX84C15LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C15LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 50nA
на замовлення 20441 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.84 грн
105+3.81 грн
165+2.41 грн
200+1.98 грн
500+1.33 грн
1000+1.19 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MM74HCT138MTC ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw
MM74HCT138MTC
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 160µA
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.41 грн
11+36.74 грн
25+35.55 грн
28+33.33 грн
77+31.51 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FQD3P50TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819951B2E4A3E259&compId=FQD3P50.pdf?ci_sign=a950cf6ebbbe597ca1a787d914f57d7b13e525c5
FQD3P50TM
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 760 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+99.99 грн
10+65.87 грн
25+58.73 грн
50+53.97 грн
100+49.20 грн
250+48.41 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
1N5361BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5361BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: bulk
на замовлення 397 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.20 грн
20+20.00 грн
23+17.54 грн
50+13.09 грн
100+12.54 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MMBT5087LT1G mmbt5087lt1-d.pdf
MMBT5087LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
на замовлення 2028 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.26 грн
55+7.30 грн
81+4.95 грн
100+4.14 грн
500+2.78 грн
1000+2.38 грн
1500+2.18 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BC857BWT1G bc856bwt1-d.pdf
BC857BWT1G
+1
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.55 грн
82+4.84 грн
136+2.94 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
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