| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| CAT24C64YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C3V3LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 5µA |
на замовлення 5679 шт: термін постачання 21-30 дні (днів) |
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BZX84C5V1LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZX84C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5333BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 3.3V; bulk; CASE017AA; single diode; 300uA Type of diode: Zener Power dissipation: 5W Zener voltage: 3.3V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.3mA Manufacturer series: 1N53xxB |
на замовлення 1751 шт: термін постачання 21-30 дні (днів) |
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1N5333BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 3.3V; reel,tape; CASE017AA; single diode; 300uA Type of diode: Zener Power dissipation: 5W Zener voltage: 3.3V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.3mA Manufacturer series: 1N53xxB |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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UC2844BD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -25...85°C Topology: boost; flyback Supply voltage: 16...36V Duty cycle factor: 0...48% Kind of package: reel; tape Operating voltage: 10...36V Power: 702mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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UC2844BDR2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -25...85°C Topology: boost; flyback Supply voltage: 16...36V Duty cycle factor: 0...48% Kind of package: reel; tape Operating voltage: 10...36V Power: 862mW |
на замовлення 1363 шт: термін постачання 21-30 дні (днів) |
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UC2844BNG | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...85°C Topology: boost; flyback Supply voltage: 16...36V Duty cycle factor: 0...48% Kind of package: tube Operating voltage: 10...36V Power: 1.25W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC126M | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; HC; 2÷6VDC Type of integrated circuit: digital Technology: CMOS Case: SO14 Manufacturer series: HC Number of channels: 4 Mounting: SMD Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Kind of integrated circuit: buffer; non-inverting |
на замовлення 111 шт: термін постачання 21-30 дні (днів) |
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| MM74HC126MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC Type of integrated circuit: digital Technology: CMOS Case: TSSOP14WB Manufacturer series: HC Family: HC Number of channels: 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Number of inputs: 2 Kind of output: 3-state Supply voltage: 2...6V DC Kind of integrated circuit: 3-state; buffer |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MM74HC126MX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC Type of integrated circuit: digital Technology: CMOS Case: SOIC14 Manufacturer series: HC Family: HC Number of channels: 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Number of inputs: 2 Kind of output: 3-state Supply voltage: 2...6V DC Kind of integrated circuit: 3-state; buffer |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NSI45015WT1G | ONSEMI |
Category: LED driversDescription: IC: driver; current regulator,LED driver; SOD123; 15mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Output current: 15mA Case: SOD123 Mounting: SMD Number of channels: 1 Operating temperature: -55...150°C Operating voltage: 45V DC Power dissipation: 0.46W Operating current: 15mA |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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MURS120T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 860 шт: термін постачання 21-30 дні (днів) |
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MC74AC245DWG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Manufacturer series: AC Mounting: SMD Case: SO20 Operating temperature: -40...85°C Supply voltage: 2...6V DC Quiescent current: 80µA Kind of package: reel; tape Kind of output: 3-state |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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MJ15024G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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MMBT4401LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQAF16N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.15A Power dissipation: 110W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR0530T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 9733 шт: термін постачання 21-30 дні (днів) |
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MBR0530T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 6124 шт: термін постачання 21-30 дні (днів) |
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MC33035DWG | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; brushless motor controller; SO24; 75mA; Ch: 3 Supply voltage: 0...40V DC Kind of integrated circuit: brushless motor controller Application: universal Type of integrated circuit: driver Mounting: SMD Case: SO24 Kind of package: tube Operating temperature: -40...85°C Output current: 75mA Number of channels: 3 Operating voltage: 10...30V DC |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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NUD4001DR2G | ONSEMI |
Category: LED driversDescription: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM Mounting: SMD Case: SO8 Operating temperature: -40...125°C Output current: 0.5A Output voltage: 28V Kind of integrated circuit: LED driver Integrated circuit features: PWM Number of channels: 1 Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTJD4001NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.18A Power dissipation: 0.272W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1789 шт: термін постачання 21-30 дні (днів) |
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NVTJD4001NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.18A Power dissipation: 0.272W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2910 шт: термін постачання 21-30 дні (днів) |
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6N138M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 300-1600%@1.6mA Case: DIP8 Manufacturer series: 6N138M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBFJ201 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 200µA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -40V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 2470 шт: термін постачання 21-30 дні (днів) |
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| CAT24C04HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FQD2N90TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP431ACSNT1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCPF11N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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FCPF11N60F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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FCPF11N60T | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD6637 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: P-MOSFET Technology: PowerTrench® Mounting: SMD Drain current: -55A Drain-source voltage: -35V Gate charge: 35nC On-state resistance: 19mΩ Gate-source voltage: ±25V Power dissipation: 57W Polarisation: unipolar |
на замовлення 2544 шт: термін постачання 21-30 дні (днів) |
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MM74HC86M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 20µA Family: HC Kind of package: tube Supply voltage: 2...6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJH11020G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 200V |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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MJH11021G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: PNP Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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MJH11022G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD |
на замовлення 1418 шт: термін постачання 21-30 дні (днів) |
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BZX85C10 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
на замовлення 2770 шт: термін постачання 21-30 дні (днів) |
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BZX85C15 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 15V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
на замовлення 4787 шт: термін постачання 21-30 дні (днів) |
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BZX85C16 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 16V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBTA06LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 868 шт: термін постачання 21-30 дні (днів) |
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MM74HC32MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns Type of integrated circuit: digital Technology: CMOS Case: SO14 Family: HC Kind of gate: OR Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Delay time: 10ns Number of inputs: 2 Supply voltage: 2...6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC32MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Technology: CMOS Case: TSSOP14 Family: HC Kind of gate: OR Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Delay time: 10ns Number of inputs: 2 Supply voltage: 2...6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC86MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HC Delay time: 9ns Kind of package: reel; tape Supply voltage: 2...6V DC |
товару немає в наявності |
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| MM74HC86MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: HC Kind of package: reel; tape Manufacturer series: HC Supply voltage: 2...6V DC |
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MM74HC132MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Family: HC Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Supply voltage: 2...6V DC Technology: CMOS Case: SO14 |
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MM74HC132MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Family: HC Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Supply voltage: 2...6V DC Technology: CMOS Case: TSSOP14 |
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MMBD1503A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Type of diode: switching Capacitance: 4pF Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. forward voltage: 1.15V Max. off-state voltage: 200V Case: SOT23 Kind of package: reel; tape Semiconductor structure: double series |
на замовлення 2750 шт: термін постачання 21-30 дні (днів) |
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MMBT2484LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.225/0.3W Collector-emitter voltage: 60V Type of transistor: NPN Current gain: 250...800 Polarisation: bipolar |
на замовлення 269 шт: термін постачання 21-30 дні (днів) |
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LM317LZG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Mounting: THT Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Output current: 0.1A Number of channels: 1 Input voltage: 3...40V Kind of voltage regulator: adjustable; linear Kind of package: bulk Case: TO92 Manufacturer series: LM317L |
на замовлення 2110 шт: термін постачання 21-30 дні (днів) |
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LM317LZRAG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.1A Case: TO92 Mounting: THT Manufacturer series: LM317L Kind of package: reel; tape Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V |
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MUR1640CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Kind of package: tube Case: TO220AB Max. load current: 16A Reverse recovery time: 60ns Max. forward impulse current: 100A Heatsink thickness: 1.15...1.39mm |
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|
FSB560A | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Kind of package: reel; tape Frequency: 75MHz Polarisation: bipolar Type of transistor: NPN Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 60V Current gain: 250...550 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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QSD2030 | ONSEMI |
Category: PhotodiodesDescription: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex Type of photoelement: photodiode Wavelength: 400...1100nm Wavelength of peak sensitivity: 880nm LED diameter: 5mm Operating voltage: 1.3V Viewing angle: 40° LED lens: transparent Front: convex Mounting: THT |
на замовлення 503 шт: термін постачання 21-30 дні (днів) |
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LM258DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -25...85°C Slew rate: 0.6V/μs Input offset voltage: 2mV Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||||
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FQA140N10 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Pulsed drain current: 560A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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| NCP1075STAT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Frequency: 59...71kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC |
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| NCP1075STBT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Frequency: 90...110kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC |
товару немає в наявності |
В кошику од. на суму грн. |
| CAT24C64YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
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В кошику
од. на суму грн.
| BZX84C3V3LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 5µA
на замовлення 5679 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 93+ | 4.37 грн |
| 143+ | 2.83 грн |
| 172+ | 2.36 грн |
| 500+ | 1.58 грн |
| 1000+ | 1.35 грн |
| 3000+ | 1.08 грн |
| BZX84C5V1LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
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| 1N5333BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.3V; bulk; CASE017AA; single diode; 300uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.3V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.3mA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.3V; bulk; CASE017AA; single diode; 300uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.3V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.3mA
Manufacturer series: 1N53xxB
на замовлення 1751 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.22 грн |
| 19+ | 22.40 грн |
| 50+ | 17.06 грн |
| 100+ | 15.04 грн |
| 200+ | 13.34 грн |
| 250+ | 12.78 грн |
| 500+ | 11.81 грн |
| 1N5333BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.3V; reel,tape; CASE017AA; single diode; 300uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.3mA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.3V; reel,tape; CASE017AA; single diode; 300uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.3mA
Manufacturer series: 1N53xxB
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.29 грн |
| 29+ | 14.23 грн |
| 50+ | 13.67 грн |
| UC2844BD1R2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Operating voltage: 10...36V
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Operating voltage: 10...36V
Power: 702mW
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| UC2844BDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Operating voltage: 10...36V
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Operating voltage: 10...36V
Power: 862mW
на замовлення 1363 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.02 грн |
| 10+ | 45.37 грн |
| 25+ | 38.33 грн |
| 100+ | 29.92 грн |
| 250+ | 25.64 грн |
| 500+ | 23.53 грн |
| UC2844BNG |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: tube
Operating voltage: 10...36V
Power: 1.25W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: tube
Operating voltage: 10...36V
Power: 1.25W
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| MM74HC126M |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; HC; 2÷6VDC
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Manufacturer series: HC
Number of channels: 4
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: buffer; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; HC; 2÷6VDC
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Manufacturer series: HC
Number of channels: 4
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: buffer; non-inverting
на замовлення 111 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.77 грн |
| 12+ | 34.61 грн |
| 25+ | 28.14 грн |
| 55+ | 24.02 грн |
| 110+ | 22.64 грн |
| MM74HC126MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14WB
Manufacturer series: HC
Family: HC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14WB
Manufacturer series: HC
Family: HC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer
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| MM74HC126MX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC14
Manufacturer series: HC
Family: HC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC14
Manufacturer series: HC
Family: HC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer
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| NSI45015WT1G |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 15mA
Case: SOD123
Mounting: SMD
Number of channels: 1
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 15mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 15mA
Case: SOD123
Mounting: SMD
Number of channels: 1
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 15mA
на замовлення 2875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.35 грн |
| 24+ | 17.06 грн |
| 29+ | 14.07 грн |
| 100+ | 10.59 грн |
| 250+ | 8.90 грн |
| 500+ | 8.01 грн |
| MURS120T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.03 грн |
| 28+ | 14.88 грн |
| 31+ | 13.42 грн |
| 50+ | 10.76 грн |
| 100+ | 9.87 грн |
| 500+ | 8.01 грн |
| MC74AC245DWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: AC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 80µA
Kind of package: reel; tape
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: AC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 80µA
Kind of package: reel; tape
Kind of output: 3-state
на замовлення 74 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.47 грн |
| 10+ | 67.93 грн |
| 25+ | 50.95 грн |
| 38+ | 46.09 грн |
| MJ15024G | ![]() |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
на замовлення 112 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 425.86 грн |
| 10+ | 359.05 грн |
| MMBT4401LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| FQAF16N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
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| MBR0530T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 9733 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.84 грн |
| 66+ | 6.15 грн |
| 75+ | 5.42 грн |
| 100+ | 5.06 грн |
| 500+ | 4.29 грн |
| 1000+ | 3.96 грн |
| 3000+ | 3.42 грн |
| 6000+ | 3.11 грн |
| 9000+ | 2.91 грн |
| MBR0530T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 6124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.32 грн |
| 91+ | 4.45 грн |
| 107+ | 3.80 грн |
| 114+ | 3.56 грн |
| 500+ | 3.05 грн |
| 1000+ | 3.04 грн |
| MC33035DWG |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; 75mA; Ch: 3
Supply voltage: 0...40V DC
Kind of integrated circuit: brushless motor controller
Application: universal
Type of integrated circuit: driver
Mounting: SMD
Case: SO24
Kind of package: tube
Operating temperature: -40...85°C
Output current: 75mA
Number of channels: 3
Operating voltage: 10...30V DC
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; 75mA; Ch: 3
Supply voltage: 0...40V DC
Kind of integrated circuit: brushless motor controller
Application: universal
Type of integrated circuit: driver
Mounting: SMD
Case: SO24
Kind of package: tube
Operating temperature: -40...85°C
Output current: 75mA
Number of channels: 3
Operating voltage: 10...30V DC
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 372.74 грн |
| 3+ | 319.43 грн |
| 10+ | 299.21 грн |
| NUD4001DR2G | ![]() |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: 0.5A
Output voltage: 28V
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Number of channels: 1
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: 0.5A
Output voltage: 28V
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Number of channels: 1
Type of integrated circuit: driver
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| NTJD4001NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1789 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.00 грн |
| 23+ | 18.03 грн |
| 50+ | 12.37 грн |
| 100+ | 10.43 грн |
| 500+ | 7.52 грн |
| NVTJD4001NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2910 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.13 грн |
| 21+ | 19.65 грн |
| 24+ | 16.98 грн |
| 31+ | 13.26 грн |
| 43+ | 9.46 грн |
| 54+ | 7.60 грн |
| 6N138M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
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| MMBFJ201 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 200µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 200µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.00 грн |
| 21+ | 19.89 грн |
| 28+ | 14.80 грн |
| 50+ | 12.94 грн |
| 100+ | 11.48 грн |
| 250+ | 9.70 грн |
| 500+ | 8.57 грн |
| 1000+ | 8.01 грн |
| CAT24C04HU4I-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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| FQD2N90TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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| FQU2N90TU-AM002 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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| FQU2N90TU-WS |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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| NCP431ACSNT1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
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| FCPF11N60 | ![]() |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.79 грн |
| 10+ | 114.02 грн |
| FCPF11N60F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 277.81 грн |
| 10+ | 170.63 грн |
| FCPF11N60T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
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| FDD6637 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
на замовлення 2544 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 113.21 грн |
| 5+ | 92.19 грн |
| 10+ | 84.10 грн |
| 50+ | 65.50 грн |
| 100+ | 60.65 грн |
| MM74HC86M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
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| MJH11020G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 346.61 грн |
| 10+ | 253.12 грн |
| MJH11021G |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.26 грн |
| MJH11022G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
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| MJD127T4G |
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Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
на замовлення 1418 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.15 грн |
| 10+ | 49.57 грн |
| 20+ | 42.46 грн |
| 50+ | 34.21 грн |
| 100+ | 29.35 грн |
| 200+ | 25.47 грн |
| 500+ | 24.26 грн |
| BZX85C10 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
на замовлення 2770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.58 грн |
| 59+ | 6.95 грн |
| 70+ | 5.82 грн |
| 111+ | 3.66 грн |
| 132+ | 3.07 грн |
| 250+ | 2.83 грн |
| BZX85C15 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
на замовлення 4787 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.45 грн |
| 59+ | 6.95 грн |
| 73+ | 5.60 грн |
| 86+ | 4.72 грн |
| 101+ | 4.01 грн |
| 250+ | 3.27 грн |
| 500+ | 2.85 грн |
| 1000+ | 2.51 грн |
| 3000+ | 2.47 грн |
| BZX85C16 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
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| MMBTA06LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 868 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.84 грн |
| 77+ | 5.26 грн |
| 113+ | 3.59 грн |
| 135+ | 3.02 грн |
| 500+ | 2.06 грн |
| MM74HC32MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Family: HC
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 10ns
Number of inputs: 2
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Family: HC
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 10ns
Number of inputs: 2
Supply voltage: 2...6V DC
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| MM74HC32MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Family: HC
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 10ns
Number of inputs: 2
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Family: HC
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 10ns
Number of inputs: 2
Supply voltage: 2...6V DC
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| MM74HC86MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HC
Delay time: 9ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HC
Delay time: 9ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
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| MM74HC86MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
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| MM74HC132MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Supply voltage: 2...6V DC
Technology: CMOS
Case: SO14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Supply voltage: 2...6V DC
Technology: CMOS
Case: SO14
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| MM74HC132MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Supply voltage: 2...6V DC
Technology: CMOS
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Supply voltage: 2...6V DC
Technology: CMOS
Case: TSSOP14
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| MMBD1503A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: double series
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: double series
на замовлення 2750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.42 грн |
| 36+ | 11.48 грн |
| 50+ | 8.17 грн |
| 100+ | 7.00 грн |
| 500+ | 4.89 грн |
| 1000+ | 4.20 грн |
| 1500+ | 4.15 грн |
| MMBT2484LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 60V
Type of transistor: NPN
Current gain: 250...800
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 60V
Type of transistor: NPN
Current gain: 250...800
Polarisation: bipolar
на замовлення 269 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.32 грн |
| 54+ | 7.60 грн |
| 77+ | 5.29 грн |
| 100+ | 4.50 грн |
| LM317LZG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 25+ | 16.42 грн |
| 100+ | 14.56 грн |
| 500+ | 12.37 грн |
| 1000+ | 12.13 грн |
| LM317LZRAG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LM317L
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LM317L
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
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| MUR1640CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 60ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 60ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
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| FSB560A |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 60V
Current gain: 250...550
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 60V
Current gain: 250...550
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| QSD2030 |
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Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Type of photoelement: photodiode
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Mounting: THT
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Type of photoelement: photodiode
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Mounting: THT
на замовлення 503 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.32 грн |
| 17+ | 25.23 грн |
| 25+ | 22.32 грн |
| 100+ | 18.76 грн |
| 250+ | 16.82 грн |
| LM258DR2G | ![]() |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -25...85°C
Slew rate: 0.6V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -25...85°C
Slew rate: 0.6V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
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| FQA140N10 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 482.47 грн |
| 10+ | 343.69 грн |
| NCP1075STAT3G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
товару немає в наявності
В кошику
од. на суму грн.
| NCP1075STBT3G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
товару немає в наявності
В кошику
од. на суму грн.






























