| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FQI7N80TU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 26.4A Power dissipation: 167W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC08ADG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Type of integrated circuit: digital Case: SO14 Family: HC Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -55...125°C Delay time: 15ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 649 шт: термін постачання 14-30 дні (днів) |
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MC74HC08ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns Type of integrated circuit: digital Case: SO14 Family: HC Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Delay time: 15ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC08ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Case: TSSOP14 Family: HC Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Delay time: 15ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC08M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Case: SO14 Family: HC Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 331 шт: термін постачання 14-30 дні (днів) |
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MM74HC08MTC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Case: TSSOP14 Family: HC Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC08MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Case: TSSOP14 Family: HC Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC08MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Case: SO14 Family: HC Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14066BDG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO14; 3÷18VDC Operating temperature: -55...125°C Mounting: SMD Case: SO14 Quiescent current: 30µA Number of inputs: 4 Supply voltage: 3...18V DC Kind of integrated circuit: multiplexer Type of integrated circuit: analog switch Kind of package: tube Technology: CMOS Number of channels: 4 |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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MC78M05BDTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.1A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.1A Case: DPAK Mounting: SMD Manufacturer series: MC78M00 Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V |
на замовлення 389 шт: термін постачання 14-30 дні (днів) |
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MC78M05BDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC78M00 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BS270 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 2A; 0.625W; TO92 Mounting: THT Type of transistor: N-MOSFET Case: TO92 Polarisation: unipolar Drain current: 0.4A Power dissipation: 0.625W Pulsed drain current: 2A On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: bulk Technology: DMOS Kind of channel: enhancement |
на замовлення 3173 шт: термін постачання 14-30 дні (днів) |
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BS270-D74Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 400mA; Idm: 2A; 0.625W; TO92 Mounting: THT Type of transistor: N-MOSFET Case: TO92 Polarisation: unipolar Drain current: 0.4A Power dissipation: 0.625W Pulsed drain current: 2A On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: Ammo Pack Technology: DMOS Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PN2222ABU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Mounting: THT Frequency: 300MHz Current gain: 100...300 Kind of package: bulk |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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PN2222ATA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Frequency: 300MHz Current gain: 100...300 Kind of package: Ammo Pack |
на замовлення 417 шт: термін постачання 14-30 дні (днів) |
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PN2222ATF | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Frequency: 300MHz Current gain: 100...300 Kind of package: reel; tape |
на замовлення 179 шт: термін постачання 14-30 дні (днів) |
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MBT2222ADW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PZT2222AT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 2427 шт: термін постачання 14-30 дні (днів) |
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FQA24N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14.9A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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MUR860G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.5V Reverse recovery time: 50ns Heatsink thickness: 1.14...1.39mm Max. load current: 16A |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
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BCP69T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
на замовлення 696 шт: термін постачання 14-30 дні (днів) |
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MMBTA42LT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74VHC595MTCX | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 8; SMD; TSSOP16; VHC; VHC; -40÷85°C; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: parallel out; serial input; serial output; shift register Number of channels: 8 Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Family: VHC Kind of output: latch |
на замовлення 899 шт: термін постачання 14-30 дні (днів) |
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74VHC595MX | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 8; SMD; SO16; VHC; VHC; -40÷85°C; 2÷5.5VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: parallel out; serial input; serial output; shift register Number of channels: 8 Mounting: SMD Case: SO16 Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Kind of output: latch Quiescent current: 40µA Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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J112 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA Kind of package: bulk Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 5mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 50Ω |
на замовлення 4537 шт: термін постачання 14-30 дні (днів) |
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FDS9435A | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 236 шт: термін постачання 14-30 дні (днів) |
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BC846BLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC846BPDW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 65V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Kind of transistor: complementary pair |
на замовлення 12403 шт: термін постачання 14-30 дні (днів) |
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4N25SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Mounting: SMD Turn-off time: 2µs Turn-on time: 2µs Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 20%@10mA Insulation voltage: 7.5kV Case: Gull wing 6 Type of optocoupler: optocoupler Kind of output: transistor |
на замовлення 583 шт: термін постачання 14-30 дні (днів) |
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4N25SR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Mounting: SMD Turn-off time: 2µs Turn-on time: 2µs Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 20%@10mA Insulation voltage: 7.5kV Case: Gull wing 6 Type of optocoupler: optocoupler Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBT2222LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
на замовлення 2483 шт: термін постачання 14-30 дні (днів) |
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BC848ALT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 446 шт: термін постачання 14-30 дні (днів) |
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BC848BLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Type of transistor: NPN Collector current: 0.1A Power dissipation: 0.225W Collector-emitter voltage: 30V Current gain: 200...450 Frequency: 100MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 3331 шт: термін постачання 14-30 дні (днів) |
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KSP2907ABU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
на замовлення 7686 шт: термін постачання 14-30 дні (днів) |
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KSP2907ACTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSP2907ATA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSP2907ATF | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCD4N60TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2462 шт: термін постачання 14-30 дні (днів) |
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MOC3062M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Mounting: THT Case: DIP6 Type of optocoupler: optotriac Kind of output: zero voltage crossing driver Trigger current: 10mA Max. off-state voltage: 3V Output voltage: 600V Insulation voltage: 5.3kV |
на замовлення 99 шт: термін постачання 14-30 дні (днів) |
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MOC3062SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: Gull wing 6 Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3062M Slew rate: 0.6kV/μs |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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MOC3062TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: DIP6 Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3062M Slew rate: 0.6kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MUR1560G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: TO220AC Reverse recovery time: 60ns Heatsink thickness: 1.14...1.39mm |
на замовлення 182 шт: термін постачання 14-30 дні (днів) |
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SBC856ALT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 2240 шт: термін постачання 14-30 дні (днів) |
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NRVUS2MA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAW56LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Features of semiconductor devices: fast switching |
на замовлення 9662 шт: термін постачання 14-30 дні (днів) |
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BAW56LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Features of semiconductor devices: fast switching |
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BC517-D74Z | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92 Case: TO92 Mounting: THT Kind of package: Ammo Pack Collector current: 1.2A Power dissipation: 0.625W Collector-emitter voltage: 30V Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN |
на замовлення 2628 шт: термін постачання 14-30 дні (днів) |
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FCD5N60TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2478 шт: термін постачання 14-30 дні (днів) |
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FDD5N60NZTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2402 шт: термін постачання 14-30 дні (днів) |
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| FQD5N60CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| FQI5N60CTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 18A Power dissipation: 100W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| FQU5N60CTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 11.2A Power dissipation: 49W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
|
2N3773G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 16A Power dissipation: 150W Case: TO3 Mounting: THT Frequency: 200kHz Kind of package: in-tray |
на замовлення 216 шт: термін постачання 14-30 дні (днів) |
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TLV431ALPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: bulk Maximum output current: 20mA |
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В кошику од. на суму грн. | ||||||||||||||||||
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TLV431ALPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 1368 шт: термін постачання 14-30 дні (днів) |
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TLV431ASN1T1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLV431ASNT1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 2585 шт: термін постачання 14-30 дні (днів) |
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TLV431BLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 287 шт: термін постачання 14-30 дні (днів) |
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TLV431BSN1T1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 649 шт: термін постачання 14-30 дні (днів) |
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| TLV431BSNT1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. |
| FQI7N80TU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 26.4A
Power dissipation: 167W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 26.4A
Power dissipation: 167W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
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| MC74HC08ADG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 649 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.28 грн |
| 15+ | 29.06 грн |
| 25+ | 27.89 грн |
| 55+ | 26.89 грн |
| 110+ | 25.81 грн |
| 275+ | 24.80 грн |
| 550+ | 24.05 грн |
| MC74HC08ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
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| MC74HC08ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
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| MM74HC08M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 331 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.58 грн |
| 18+ | 24.39 грн |
| MM74HC08MTC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
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| MM74HC08MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
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| MM74HC08MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
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| MC14066BDG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO14; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Case: SO14
Quiescent current: 30µA
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of integrated circuit: multiplexer
Type of integrated circuit: analog switch
Kind of package: tube
Technology: CMOS
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO14; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Case: SO14
Quiescent current: 30µA
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of integrated circuit: multiplexer
Type of integrated circuit: analog switch
Kind of package: tube
Technology: CMOS
Number of channels: 4
на замовлення 29 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.68 грн |
| 22+ | 19.46 грн |
| 25+ | 17.71 грн |
| MC78M05BDTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
на замовлення 389 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.88 грн |
| 20+ | 21.71 грн |
| 24+ | 18.04 грн |
| 33+ | 12.95 грн |
| MC78M05BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
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| BS270 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 2A; 0.625W; TO92
Mounting: THT
Type of transistor: N-MOSFET
Case: TO92
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 0.625W
Pulsed drain current: 2A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: bulk
Technology: DMOS
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 2A; 0.625W; TO92
Mounting: THT
Type of transistor: N-MOSFET
Case: TO92
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 0.625W
Pulsed drain current: 2A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: bulk
Technology: DMOS
Kind of channel: enhancement
на замовлення 3173 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.89 грн |
| 48+ | 8.77 грн |
| BS270-D74Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; Idm: 2A; 0.625W; TO92
Mounting: THT
Type of transistor: N-MOSFET
Case: TO92
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 0.625W
Pulsed drain current: 2A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: Ammo Pack
Technology: DMOS
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; Idm: 2A; 0.625W; TO92
Mounting: THT
Type of transistor: N-MOSFET
Case: TO92
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 0.625W
Pulsed drain current: 2A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: Ammo Pack
Technology: DMOS
Kind of channel: enhancement
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| PN2222ABU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: bulk
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.29 грн |
| 40+ | 10.52 грн |
| 46+ | 9.27 грн |
| 100+ | 5.90 грн |
| 500+ | 4.13 грн |
| PN2222ATA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: Ammo Pack
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: Ammo Pack
на замовлення 417 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.39 грн |
| 44+ | 9.60 грн |
| 62+ | 6.80 грн |
| 100+ | 5.94 грн |
| PN2222ATF |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
на замовлення 179 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.89 грн |
| 53+ | 7.93 грн |
| 100+ | 5.60 грн |
| MBT2222ADW1T1G | ![]() |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| PZT2222AT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 2427 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.98 грн |
| 20+ | 21.13 грн |
| 50+ | 15.95 грн |
| 100+ | 14.11 грн |
| 500+ | 10.77 грн |
| 1000+ | 10.36 грн |
| FQA24N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 498.28 грн |
| MUR860G | ![]() |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Reverse recovery time: 50ns
Heatsink thickness: 1.14...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Reverse recovery time: 50ns
Heatsink thickness: 1.14...1.39mm
Max. load current: 16A
на замовлення 66 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.75 грн |
| 10+ | 47.52 грн |
| 50+ | 36.25 грн |
| BCP69T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 696 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.07 грн |
| 16+ | 26.73 грн |
| 50+ | 17.46 грн |
| 100+ | 15.03 грн |
| 250+ | 13.11 грн |
| 500+ | 12.53 грн |
| MMBTA42LT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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од. на суму грн.
| 74VHC595MTCX |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; TSSOP16; VHC; VHC; -40÷85°C; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Family: VHC
Kind of output: latch
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; TSSOP16; VHC; VHC; -40÷85°C; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Family: VHC
Kind of output: latch
на замовлення 899 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.38 грн |
| 19+ | 22.22 грн |
| 25+ | 20.38 грн |
| 74VHC595MX |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; SO16; VHC; VHC; -40÷85°C; 2÷5.5VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: SO16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Kind of output: latch
Quiescent current: 40µA
Manufacturer series: VHC
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; SO16; VHC; VHC; -40÷85°C; 2÷5.5VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: SO16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Kind of output: latch
Quiescent current: 40µA
Manufacturer series: VHC
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од. на суму грн.
| J112 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
на замовлення 4537 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.78 грн |
| 30+ | 14.03 грн |
| 33+ | 12.95 грн |
| 50+ | 10.36 грн |
| 75+ | 10.02 грн |
| 100+ | 9.77 грн |
| 300+ | 9.27 грн |
| FDS9435A |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 236 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.36 грн |
| 10+ | 45.60 грн |
| 50+ | 31.24 грн |
| 100+ | 26.64 грн |
| BC846BLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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од. на суму грн.
| BC846BPDW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 65V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 65V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
на замовлення 12403 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.59 грн |
| 55+ | 7.68 грн |
| 78+ | 5.36 грн |
| 100+ | 4.62 грн |
| 500+ | 3.29 грн |
| 1000+ | 2.87 грн |
| 3000+ | 2.33 грн |
| 9000+ | 1.94 грн |
| 4N25SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
на замовлення 583 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.47 грн |
| 21+ | 20.46 грн |
| 30+ | 18.71 грн |
| 50+ | 17.96 грн |
| 100+ | 16.87 грн |
| 500+ | 14.45 грн |
| 4N25SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2222LT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 2483 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.99 грн |
| 82+ | 5.09 грн |
| 133+ | 3.16 грн |
| 500+ | 2.25 грн |
| 1000+ | 1.94 грн |
| 2000+ | 1.67 грн |
| BC848ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 446 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.09 грн |
| 117+ | 3.59 грн |
| 149+ | 2.81 грн |
| 165+ | 2.54 грн |
| BC848BLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Type of transistor: NPN
Collector current: 0.1A
Power dissipation: 0.225W
Collector-emitter voltage: 30V
Current gain: 200...450
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Type of transistor: NPN
Collector current: 0.1A
Power dissipation: 0.225W
Collector-emitter voltage: 30V
Current gain: 200...450
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 3331 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.09 грн |
| 74+ | 5.68 грн |
| 84+ | 5.01 грн |
| 120+ | 3.51 грн |
| 139+ | 3.01 грн |
| 500+ | 2.10 грн |
| 1000+ | 1.81 грн |
| 2000+ | 1.60 грн |
| 3000+ | 1.49 грн |
| KSP2907ABU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
на замовлення 7686 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.99 грн |
| 46+ | 9.27 грн |
| 100+ | 5.69 грн |
| 500+ | 4.14 грн |
| 1000+ | 3.64 грн |
| 2000+ | 3.49 грн |
| KSP2907ACTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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| KSP2907ATA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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| KSP2907ATF |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
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| FCD4N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2462 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 149.30 грн |
| 5+ | 110.24 грн |
| 10+ | 96.88 грн |
| 50+ | 70.99 грн |
| 100+ | 63.47 грн |
| 250+ | 60.97 грн |
| MOC3062M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Mounting: THT
Case: DIP6
Type of optocoupler: optotriac
Kind of output: zero voltage crossing driver
Trigger current: 10mA
Max. off-state voltage: 3V
Output voltage: 600V
Insulation voltage: 5.3kV
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Mounting: THT
Case: DIP6
Type of optocoupler: optotriac
Kind of output: zero voltage crossing driver
Trigger current: 10mA
Max. off-state voltage: 3V
Output voltage: 600V
Insulation voltage: 5.3kV
на замовлення 99 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.66 грн |
| 15+ | 29.40 грн |
| 16+ | 26.98 грн |
| 25+ | 24.64 грн |
| 50+ | 23.22 грн |
| MOC3062SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
на замовлення 46 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.75 грн |
| 10+ | 60.30 грн |
| MOC3062TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
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| MUR1560G | ![]() |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
на замовлення 182 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.26 грн |
| SBC856ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2240 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.69 грн |
| 31+ | 13.78 грн |
| 100+ | 7.91 грн |
| 500+ | 5.49 грн |
| 1000+ | 4.77 грн |
| NRVUS2MA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| BAW56LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 9662 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.20 грн |
| 95+ | 4.43 грн |
| 138+ | 3.04 грн |
| 162+ | 2.58 грн |
| 250+ | 2.09 грн |
| 500+ | 1.79 грн |
| 1000+ | 1.55 грн |
| 3000+ | 1.25 грн |
| BAW56LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| BC517-D74Z |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1.2A
Power dissipation: 0.625W
Collector-emitter voltage: 30V
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1.2A
Power dissipation: 0.625W
Collector-emitter voltage: 30V
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
на замовлення 2628 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.78 грн |
| 19+ | 22.55 грн |
| 22+ | 19.63 грн |
| 100+ | 11.27 грн |
| 500+ | 7.93 грн |
| 1000+ | 7.02 грн |
| 2000+ | 6.68 грн |
| FCD5N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2478 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.02 грн |
| 5+ | 95.21 грн |
| 10+ | 86.02 грн |
| 25+ | 72.66 грн |
| 100+ | 62.64 грн |
| FDD5N60NZTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2402 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 108.83 грн |
| 6+ | 80.68 грн |
| 10+ | 70.41 грн |
| 25+ | 57.96 грн |
| 100+ | 43.85 грн |
| 250+ | 41.68 грн |
| FQD5N60CTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FQI5N60CTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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| FQU5N60CTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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| 2N3773G | ![]() |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Frequency: 200kHz
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Frequency: 200kHz
Kind of package: in-tray
на замовлення 216 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 491.98 грн |
| 5+ | 403.39 грн |
| 10+ | 380.00 грн |
| TLV431ALPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
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| TLV431ALPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 1368 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.08 грн |
| TLV431ASN1T1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
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| TLV431ASNT1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 2585 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.38 грн |
| 24+ | 17.71 грн |
| 27+ | 15.78 грн |
| 29+ | 14.45 грн |
| TLV431BLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 287 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 124.12 грн |
| 9+ | 47.27 грн |
| 25+ | 41.76 грн |
| 100+ | 38.00 грн |
| TLV431BSN1T1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 649 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.69 грн |
| 27+ | 15.87 грн |
| 30+ | 14.36 грн |
| 34+ | 12.61 грн |
| 100+ | 11.61 грн |
| TLV431BSNT1G |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
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