| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BAV23S | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape |
на замовлення 3212 шт: термін постачання 21-30 дні (днів) |
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TL431AIDG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: tube Maximum output current: 0.1A |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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MBRA340T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.39V Kind of package: reel; tape |
на замовлення 11601 шт: термін постачання 21-30 дні (днів) |
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MC33063ADG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: tube |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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MC33063ADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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MC33063AP1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: DIP8 Mounting: THT Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: tube |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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MC33063AVDG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33063AVPG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: DIP8 Mounting: THT Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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FDLL4148 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape |
на замовлення 9171 шт: термін постачання 21-30 дні (днів) |
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| FDLL4148-D87Z | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC245ADTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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MC74HC245ADTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 160µA Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC245ADWG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
на замовлення 279 шт: термін постачання 21-30 дні (днів) |
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| MC74HC245ADWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HC245AMTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20WB Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
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MM74HC245AMTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 160µA Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MM74HC245ASJ | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SOP20; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Case: SOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HC245AWM | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 80µA Manufacturer series: HC |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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MM74HC245AWMX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4448WS | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323F Max. forward voltage: 1V Kind of package: reel; tape |
на замовлення 1364 шт: термін постачання 21-30 дні (днів) |
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BD13916S | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.25W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD13916STU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: tube |
на замовлення 1768 шт: термін постачання 21-30 дні (днів) |
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BD139G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
на замовлення 182 шт: термін постачання 21-30 дні (днів) |
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2N7000-D26Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
на замовлення 1971 шт: термін постачання 21-30 дні (днів) |
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2N7000-D74Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7000-D75Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
на замовлення 2009 шт: термін постачання 21-30 дні (днів) |
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2N7000BU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7000TA | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
на замовлення 2011 шт: термін постачання 21-30 дні (днів) |
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BS170 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Technology: DMOS |
на замовлення 15233 шт: термін постачання 21-30 дні (днів) |
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BS170-D75Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 5967 шт: термін постачання 21-30 дні (днів) |
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BS170-D26Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 1781 шт: термін постачання 21-30 дні (днів) |
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BS170-D27Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 4377 шт: термін постачання 21-30 дні (днів) |
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BC807-40LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2678 шт: термін постачання 21-30 дні (днів) |
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BC807-40LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| CAT24C08C4ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C08C4CTR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C08C5ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BD14010STU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO Current gain: 63...160 Collector-emitter voltage: 80V Polarisation: bipolar Kind of package: tube Type of transistor: PNP Mounting: THT Case: TO126ISO Power dissipation: 12.5W Collector current: 1.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD140G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225 Current gain: 40...250 Collector-emitter voltage: 80V Polarisation: bipolar Kind of package: bulk Type of transistor: PNP Mounting: THT Case: TO225 Power dissipation: 12.5W Collector current: 1.5A |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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MMBD1401 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
на замовлення 2724 шт: термін постачання 21-30 дні (днів) |
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MMBD1403 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: double series Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1404 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
на замовлення 834 шт: термін постачання 21-30 дні (днів) |
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MMBD1404A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Max. forward voltage: 1.25V Max. forward impulse current: 2A Max. off-state voltage: 175V Kind of package: reel; tape Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.6A Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1405 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N3904BU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 4309 шт: термін постачання 21-30 дні (днів) |
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2N3904TFR | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
на замовлення 671 шт: термін постачання 21-30 дні (днів) |
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BSS138L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 11315 шт: термін постачання 21-30 дні (днів) |
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BSS138LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 11423 шт: термін постачання 21-30 дні (днів) |
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BSS138LT3G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 7424 шт: термін постачання 21-30 дні (днів) |
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BSS138W | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.21A Power dissipation: 0.34W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1859 шт: термін постачання 21-30 дні (днів) |
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MMBFJ113 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA Kind of package: reel; tape Type of transistor: N-JFET Mounting: SMD Case: SOT23 Polarisation: unipolar Gate-source voltage: -35V Drain current: 2mA Gate current: 50mA Power dissipation: 0.35W On-state resistance: 100Ω |
на замовлення 2955 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Kind of package: reel; tape Power dissipation: 0.5W |
на замовлення 9341 шт: термін постачання 21-30 дні (днів) |
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LM2904DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA Number of channels: dual; 2 |
на замовлення 7472 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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FGH40N60UFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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| FGAF40N60UFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 150nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 160A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 20A |
товару немає в наявності |
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MC78LC33NTRG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 53mV Output voltage: 3.3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4.3...12V |
на замовлення 2790 шт: термін постачання 21-30 дні (днів) |
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BCP53-10T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 2223 шт: термін постачання 21-30 дні (днів) |
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BCP53-16T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 232 шт: термін постачання 21-30 дні (днів) |
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| BAV23S |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
на замовлення 3212 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.60 грн |
| 57+ | 7.30 грн |
| 74+ | 5.54 грн |
| 100+ | 4.91 грн |
| 500+ | 3.72 грн |
| 1000+ | 3.31 грн |
| 1500+ | 3.09 грн |
| 3000+ | 2.91 грн |
| TL431AIDG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.73 грн |
| 23+ | 18.53 грн |
| 26+ | 16.07 грн |
| 30+ | 13.86 грн |
| MBRA340T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
на замовлення 11601 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 17+ | 25.34 грн |
| 50+ | 20.09 грн |
| 100+ | 18.12 грн |
| 250+ | 15.91 грн |
| 500+ | 14.35 грн |
| 1000+ | 13.04 грн |
| 2500+ | 11.48 грн |
| 3000+ | 11.23 грн |
| MC33063ADG | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.78 грн |
| MC33063ADR2G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
на замовлення 59 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.99 грн |
| 12+ | 34.85 грн |
| 25+ | 31.33 грн |
| MC33063AP1G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.48 грн |
| MC33063AVDG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| MC33063AVPG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.81 грн |
| 10+ | 66.26 грн |
| 25+ | 55.60 грн |
| 50+ | 48.96 грн |
| 100+ | 43.71 грн |
| FDLL4148 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
на замовлення 9171 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 117+ | 3.53 грн |
| 128+ | 3.22 грн |
| 171+ | 2.41 грн |
| 203+ | 2.03 грн |
| 500+ | 1.36 грн |
| 1000+ | 1.14 грн |
| 2500+ | 0.90 грн |
| 5000+ | 0.79 грн |
| FDLL4148-D87Z |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC245ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.61 грн |
| 10+ | 53.80 грн |
| 25+ | 44.45 грн |
| 75+ | 35.84 грн |
| MC74HC245ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC245ADWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
на замовлення 279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.99 грн |
| 10+ | 41.90 грн |
| 38+ | 35.51 грн |
| 114+ | 31.08 грн |
| MC74HC245ADWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
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| MM74HC245AMTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
на замовлення 211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.31 грн |
| 10+ | 50.11 грн |
| 25+ | 40.84 грн |
| 75+ | 33.95 грн |
| MM74HC245AMTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
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| MM74HC245ASJ |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
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| MM74HC245AWM |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.30 грн |
| 10+ | 43.46 грн |
| 25+ | 36.16 грн |
| 38+ | 33.46 грн |
| 114+ | 30.83 грн |
| MM74HC245AWMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
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| 1N4448WS |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
на замовлення 1364 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 90+ | 4.59 грн |
| 146+ | 2.81 грн |
| 500+ | 1.99 грн |
| 1000+ | 1.75 грн |
| BD13916S |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
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од. на суму грн.
| BD13916STU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
на замовлення 1768 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.29 грн |
| 16+ | 26.08 грн |
| 25+ | 23.86 грн |
| 60+ | 21.98 грн |
| 120+ | 20.42 грн |
| 540+ | 18.45 грн |
| BD139G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
на замовлення 182 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.72 грн |
| 10+ | 43.96 грн |
| 25+ | 37.89 грн |
| 100+ | 31.00 грн |
| 2N7000-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
на замовлення 1971 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.26 грн |
| 24+ | 17.71 грн |
| 50+ | 13.86 грн |
| 100+ | 12.38 грн |
| 500+ | 9.27 грн |
| 1000+ | 8.04 грн |
| 2N7000-D74Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
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В кошику
од. на суму грн.
| 2N7000-D75Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
на замовлення 2009 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.56 грн |
| 21+ | 19.85 грн |
| 27+ | 15.66 грн |
| 100+ | 10.99 грн |
| 500+ | 7.71 грн |
| 2N7000BU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
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В кошику
од. на суму грн.
| 2N7000TA |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
на замовлення 2011 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.61 грн |
| 22+ | 18.86 грн |
| 26+ | 15.83 грн |
| 50+ | 13.61 грн |
| 100+ | 11.73 грн |
| 500+ | 8.36 грн |
| 1000+ | 7.46 грн |
| BS170 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
на замовлення 15233 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 35+ | 11.73 грн |
| 45+ | 9.27 грн |
| 100+ | 7.13 грн |
| 250+ | 6.07 грн |
| 500+ | 5.58 грн |
| BS170-D75Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 5967 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.78 грн |
| 31+ | 13.53 грн |
| 100+ | 10.41 грн |
| 500+ | 7.05 грн |
| BS170-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 1781 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.49 грн |
| 22+ | 19.52 грн |
| 25+ | 16.40 грн |
| 50+ | 14.10 грн |
| 100+ | 12.05 грн |
| 250+ | 9.84 грн |
| 500+ | 8.53 грн |
| 1000+ | 7.46 грн |
| BS170-D27Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 4377 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.26 грн |
| 23+ | 18.53 грн |
| 28+ | 14.76 грн |
| 50+ | 12.30 грн |
| 100+ | 10.41 грн |
| 500+ | 7.22 грн |
| 1000+ | 6.40 грн |
| BC807-40LT1G | ![]() |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2678 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.83 грн |
| 68+ | 6.07 грн |
| 80+ | 5.17 грн |
| 117+ | 3.51 грн |
| 139+ | 2.97 грн |
| 500+ | 2.07 грн |
| 1000+ | 1.82 грн |
| 1500+ | 1.69 грн |
| BC807-40LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| CAT24C08C4ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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| CAT24C08C4CTR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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| CAT24C08C5ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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| BD14010STU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Current gain: 63...160
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Power dissipation: 12.5W
Collector current: 1.5A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Current gain: 63...160
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Power dissipation: 12.5W
Collector current: 1.5A
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| BD140G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.96 грн |
| 10+ | 46.66 грн |
| MMBD1401 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
на замовлення 2724 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.60 грн |
| 65+ | 6.40 грн |
| 78+ | 5.31 грн |
| 100+ | 4.85 грн |
| 500+ | 3.94 грн |
| MMBD1403 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
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| MMBD1404 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
на замовлення 834 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 42+ | 9.84 грн |
| 46+ | 9.02 грн |
| 59+ | 6.95 грн |
| 100+ | 6.16 грн |
| 500+ | 4.58 грн |
| MMBD1404A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
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| MMBD1405 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
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| 2N3904BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 4309 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 32+ | 13.12 грн |
| 36+ | 11.40 грн |
| 54+ | 7.59 грн |
| 100+ | 6.36 грн |
| 500+ | 4.39 грн |
| 1000+ | 3.83 грн |
| 2N3904TFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 671 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.48 грн |
| 63+ | 6.56 грн |
| 86+ | 4.79 грн |
| 100+ | 4.24 грн |
| 500+ | 3.39 грн |
| BSS138L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 11315 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.60 грн |
| 53+ | 7.79 грн |
| 67+ | 6.13 грн |
| 100+ | 5.49 грн |
| 250+ | 4.67 грн |
| 500+ | 4.12 грн |
| 1000+ | 3.58 грн |
| 3000+ | 2.81 грн |
| 6000+ | 2.37 грн |
| BSS138LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 11423 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 61+ | 6.72 грн |
| 80+ | 5.18 грн |
| 114+ | 3.60 грн |
| 250+ | 2.96 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.38 грн |
| 3000+ | 2.11 грн |
| 6000+ | 1.99 грн |
| BSS138LT3G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7424 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.01 грн |
| 46+ | 9.02 грн |
| 65+ | 6.40 грн |
| 104+ | 3.97 грн |
| BSS138W |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1859 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.20 грн |
| 33+ | 12.79 грн |
| 40+ | 10.50 грн |
| 60+ | 6.89 грн |
| 100+ | 5.95 грн |
| 500+ | 4.67 грн |
| 1000+ | 4.51 грн |
| MMBFJ113 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 100Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 100Ω
на замовлення 2955 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.49 грн |
| 26+ | 15.91 грн |
| 33+ | 12.79 грн |
| 50+ | 10.82 грн |
| 100+ | 9.27 грн |
| 250+ | 7.63 грн |
| 500+ | 6.72 грн |
| 1000+ | 6.40 грн |
| 1N4448TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
на замовлення 9341 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 125+ | 3.28 грн |
| 188+ | 2.18 грн |
| 228+ | 1.80 грн |
| 291+ | 1.41 грн |
| 500+ | 1.16 грн |
| 1000+ | 0.95 грн |
| 2000+ | 0.86 грн |
| LM2904DR2G | ![]() |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Number of channels: dual; 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Number of channels: dual; 2
на замовлення 7472 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.55 грн |
| 45+ | 9.18 грн |
| 48+ | 8.59 грн |
| 75+ | 6.57 грн |
| 100+ | 6.27 грн |
| 1000+ | 4.50 грн |
| 1300+ | 4.35 грн |
| 2500+ | 4.21 грн |
| FGH40N60SFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 339.13 грн |
| 3+ | 297.68 грн |
| 10+ | 254.22 грн |
| 30+ | 195.99 грн |
| 90+ | 186.97 грн |
| FGH40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 325.88 грн |
| 3+ | 287.84 грн |
| 10+ | 253.40 грн |
| 30+ | 209.93 грн |
| 120+ | 197.63 грн |
| FGH40N60UFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 132 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 188.11 грн |
| 10+ | 164.01 грн |
| 30+ | 147.61 грн |
| 120+ | 136.95 грн |
| FGAF40N60UFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
товару немає в наявності
В кошику
од. на суму грн.
| MC78LC33NTRG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
на замовлення 2790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.79 грн |
| 18+ | 23.95 грн |
| 20+ | 21.24 грн |
| 25+ | 21.16 грн |
| BCP53-10T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 2223 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 18+ | 23.29 грн |
| 50+ | 16.57 грн |
| 100+ | 14.27 грн |
| 200+ | 12.55 грн |
| 500+ | 10.66 грн |
| 1000+ | 9.68 грн |
| BCP53-16T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.96 грн |
| 22+ | 18.86 грн |
| 25+ | 16.98 грн |
| 50+ | 11.07 грн |
| 100+ | 9.02 грн |
























