| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MMSZ5226BT1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
на замовлення 29959 шт: термін постачання 14-30 дні (днів) |
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| FUSB302BMPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.8...5.5V Case: WQFN14 Mounting: SMD Operating temperature: -40...125°C Data transfer rate: 5Gbps DC supply current: 25µA Version: ESD Interface: USB |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FUSB302B01MPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.7...21V Case: WQFN14 Mounting: SMD Operating temperature: -40...85°C Data transfer rate: 5Gbps Interface: I2C; USB |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FUSB302B11MPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.85...5.5V Case: WQFN14 Mounting: SMD Operating temperature: -40...85°C Data transfer rate: 5Gbps Version: Standard; USB 2.0 Interface: I2C; USB; USB 2.0 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FUSB302BUCX | ONSEMI |
Category: USB interfaces - integrated circuits Description: IC: USB interface; USB C controller; Full Speed; 2.7÷5.5VDC Type of integrated circuit: USB interface Kind of integrated circuit: USB C controller USB speed: Full Speed Supply voltage: 2.7...5.5V DC Case: WLCSP9 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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1N4003G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
на замовлення 349 шт: термін постачання 14-30 дні (днів) |
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1N4003RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Manufacturer standard package: 5000pcs. |
на замовлення 4320 шт: термін постачання 14-30 дні (днів) |
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MPSA92G | ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 75ns Turn-off time: 55ns Slew rate: 15kV/μs Max. off-state voltage: 5V Output voltage: 0...25V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| FOD3180TV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs Case: PDIP8 Mounting: THT Insulation voltage: 5kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Number of channels: 2 Manufacturer series: FOD3180 Slew rate: 15kV/μs Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP1246ALD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| FDMC8321LDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: PQFN8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 60nC On-state resistance: 4.1mΩ Power dissipation: 56W Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 108A Pulsed drain current: 320A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP361SNT1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor Type of integrated circuit: driver Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.2...20V Application: USB Threshold on-voltage: 3V Kind of output: transistor |
на замовлення 1592 шт: термін постачання 14-30 дні (днів) |
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NCP711ASN300T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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M74VHC1G126DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA Type of integrated circuit: digital Case: TSOP5 Mounting: SMD Manufacturer series: VHC Kind of package: reel; tape Operating temperature: -55...125°C Number of channels: 1 Quiescent current: 40µA Kind of integrated circuit: buffer; non-inverting Supply voltage: 2...5.5V DC Kind of output: 3-state Technology: CMOS |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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NCP551SN50T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 5V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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BD241CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz Current gain: 2.5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD787G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 15W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCX19LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...600 Mounting: SMD Kind of package: reel; tape |
на замовлення 2790 шт: термін постачання 14-30 дні (днів) |
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BCW71 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Collector-emitter voltage: 45V Power dissipation: 0.35W Polarisation: bipolar Type of transistor: NPN Current gain: 110...220 Kind of package: reel; tape Frequency: 330MHz Collector current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK Mounting: SMD Power dissipation: 54W Gate charge: 26nC Polarisation: unipolar Technology: PowerTrench® Drain current: 35A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 40mΩ |
на замовлення 1134 шт: термін постачання 14-30 дні (днів) |
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MMBD4148se | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Capacitance: 4pF Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
на замовлення 1167 шт: термін постачання 14-30 дні (днів) |
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MMBD4148CA | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Leakage current: 5µA Capacitance: 4pF |
на замовлення 392 шт: термін постачання 14-30 дні (днів) |
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SMMSD4148T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC33064P-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...6.5V DC Case: TO92 Operating temperature: -40...85°C Mounting: SMD DC supply current: 390µA Maximum output current: 60mA Threshold on-voltage: 4.59V Kind of package: bulk Number of channels: 1 |
на замовлення 386 шт: термін постачання 14-30 дні (днів) |
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MC34064D-5G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR); voltage detector Kind of RESET output: open drain Active logical level: low Supply voltage: 6.5V Case: SO8 Operating temperature: 0...70°C Mounting: SMD Threshold on-voltage: 4.61V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX85C18 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Kind of package: bulk |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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MJD122T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Power dissipation: 1.75W Type of transistor: NPN Current gain: 300 Kind of package: reel; tape Case: DPAK Frequency: 4MHz Collector current: 8A Mounting: SMD Collector-emitter voltage: 100V Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 680 шт: термін постачання 14-30 дні (днів) |
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MJD127G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Current gain: 100...12000 Kind of package: tube Frequency: 4MHz |
на замовлення 69 шт: термін постачання 14-30 дні (днів) |
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MJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD |
на замовлення 2496 шт: термін постачання 14-30 дні (днів) |
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MJD122G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Current gain: 300 Mounting: SMD Kind of package: tube Frequency: 4MHz |
на замовлення 358 шт: термін постачання 14-30 дні (днів) |
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NJVMJD122T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NJVMJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP4305DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC Type of integrated circuit: PMIC Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Operating temperature: -40...125°C Output current: 4...8A Number of channels: 1 Operating voltage: 7.8...37V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| NCP4305DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC Type of integrated circuit: PMIC Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward; resonant LLC Operating temperature: -40...125°C Output current: 4...8A Number of channels: 1 Operating voltage: 7.8...37V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP4305DMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC Type of integrated circuit: PMIC Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward; resonant LLC Operating temperature: -40...125°C Output current: 4...8A Number of channels: 1 Operating voltage: 7.8...37V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25256VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25256XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NSVDTC143ZET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Power dissipation: 0.3W Application: automotive industry Current gain: 80...200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC10EP16DG | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V Type of integrated circuit: digital Kind of integrated circuit: differential; receiver Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Integrated circuit features: differential Technology: ECL Supply voltage: 3...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NDP6060L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220AB On-state resistance: 40mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Gate-source voltage: ±16V |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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NDS352AP | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.9A Power dissipation: 0.5W Case: SuperSOT-3 On-state resistance: 0.7Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate-source voltage: ±20V |
на замовлення 2809 шт: термін постачання 14-30 дні (днів) |
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FDV304P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Drain current: -460mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 4001 шт: термін постачання 14-30 дні (днів) |
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FDV301N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 21530 шт: термін постачання 14-30 дні (днів) |
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FDV303N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.68A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 5233 шт: термін постачання 14-30 дні (днів) |
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FDN360P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 136mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 4580 шт: термін постачання 14-30 дні (днів) |
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FDC658AP | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±25V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 8.1nC Features of semiconductor devices: logic level |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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FDN327N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: PowerTrench® |
на замовлення 1556 шт: термін постачання 14-30 дні (днів) |
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| ADT7461AARMZ-R | ONSEMI |
Category: Temperature transducers Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V Case: MSOP8 Type of integrated circuit: temperature sensor Operating temperature: -40...120°C Threshold on-voltage: 2.55V Supply voltage: 3...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| ADT7461ARMZ-R7 | ONSEMI |
Category: Temperature transducers Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V Case: MSOP8 Type of integrated circuit: temperature sensor Operating temperature: -40...120°C Threshold on-voltage: 2.55V Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ADT7461ARZ-REEL | ONSEMI |
Category: Temperature transducers Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V Case: MSOP8 Type of integrated circuit: temperature sensor Operating temperature: -40...120°C Threshold on-voltage: 2.55V Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 20414-009-XTD | ONSEMI |
Category: Unclassified Description: 20414-009-XTD |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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MBR360RLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 1.08V Max. forward impulse current: 80A |
на замовлення 741 шт: термін постачання 14-30 дні (днів) |
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FGY160T65SPD-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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| AFGY160T65SPD-B4 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FCD360N65S3R0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 10A Case: DPAK Gate-source voltage: 30V Mounting: SMD Kind of channel: enhancement Power dissipation: 83W Gate charge: 18nC Technology: PowerTrench® Semiconductor structure: single transistor On-state resistance: 0.36Ω |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FCPF360N65S3R0L-F154 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 10A Case: TO220 Gate-source voltage: 30V Mounting: THT Kind of channel: enhancement Power dissipation: 27W Gate charge: 18nC Technology: PowerTrench® On-state resistance: 0.36Ω |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT574WM | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Kind of package: tube Trigger: positive-edge-triggered Manufacturer series: HCT |
на замовлення 263 шт: термін постачання 14-30 дні (днів) |
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74VHCT574AM | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Kind of package: tube Trigger: positive-edge-triggered Manufacturer series: VHCT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| MMSZ5226BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
на замовлення 29959 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 65+ | 6.46 грн |
| 92+ | 4.60 грн |
| 108+ | 3.91 грн |
| 250+ | 3.12 грн |
| 500+ | 2.59 грн |
| 1000+ | 2.12 грн |
| 3000+ | 1.50 грн |
| 6000+ | 1.47 грн |
| FUSB302BMPX |
|
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.8...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...125°C
Data transfer rate: 5Gbps
DC supply current: 25µA
Version: ESD
Interface: USB
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.8...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...125°C
Data transfer rate: 5Gbps
DC supply current: 25µA
Version: ESD
Interface: USB
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FUSB302B01MPX |
|
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.7...21V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
Interface: I2C; USB
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.7...21V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
Interface: I2C; USB
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FUSB302B11MPX |
|
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.85...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
Version: Standard; USB 2.0
Interface: I2C; USB; USB 2.0
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.85...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
Version: Standard; USB 2.0
Interface: I2C; USB; USB 2.0
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FUSB302BUCX |
|
Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: USB interface; USB C controller; Full Speed; 2.7÷5.5VDC
Type of integrated circuit: USB interface
Kind of integrated circuit: USB C controller
USB speed: Full Speed
Supply voltage: 2.7...5.5V DC
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: USB interfaces - integrated circuits
Description: IC: USB interface; USB C controller; Full Speed; 2.7÷5.5VDC
Type of integrated circuit: USB interface
Kind of integrated circuit: USB C controller
USB speed: Full Speed
Supply voltage: 2.7...5.5V DC
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 1N4003G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
на замовлення 349 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.84 грн |
| 60+ | 7.04 грн |
| 71+ | 5.95 грн |
| 97+ | 4.34 грн |
| 108+ | 3.92 грн |
| 1N4003RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
на замовлення 4320 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 49+ | 8.72 грн |
| 100+ | 5.52 грн |
| 500+ | 4.08 грн |
| 1000+ | 3.58 грн |
| MPSA92G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| FOD3180 |
|
Виробник: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 75ns
Turn-off time: 55ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 0...25V
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 75ns
Turn-off time: 55ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 0...25V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FOD3180TV |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Case: PDIP8
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Number of channels: 2
Manufacturer series: FOD3180
Slew rate: 15kV/μs
Kind of output: MOSFET
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Case: PDIP8
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Number of channels: 2
Manufacturer series: FOD3180
Slew rate: 15kV/μs
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NCP1246ALD065R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FDMC8321LDC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 4.1mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 4.1mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
товару немає в наявності
В кошику
од. на суму грн.
| NCP361SNT1G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Application: USB
Threshold on-voltage: 3V
Kind of output: transistor
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Application: USB
Threshold on-voltage: 3V
Kind of output: transistor
на замовлення 1592 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.45 грн |
| 14+ | 30.78 грн |
| 25+ | 27.76 грн |
| 50+ | 25.66 грн |
| 100+ | 25.16 грн |
| NCP711ASN300T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.35 грн |
| 15+ | 28.51 грн |
| 25+ | 26.25 грн |
| M74VHC1G126DTT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Case: TSOP5
Mounting: SMD
Manufacturer series: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Case: TSOP5
Mounting: SMD
Manufacturer series: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Technology: CMOS
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.58 грн |
| NCP551SN50T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.80 грн |
| 22+ | 19.96 грн |
| 25+ | 18.03 грн |
| 100+ | 15.26 грн |
| 250+ | 13.59 грн |
| 500+ | 12.41 грн |
| 1000+ | 11.24 грн |
| 3000+ | 9.48 грн |
| BD241CG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Current gain: 2.5
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Current gain: 2.5
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| BD787G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
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| BCX19LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
на замовлення 2790 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 53+ | 8.05 грн |
| 76+ | 5.55 грн |
| 100+ | 4.71 грн |
| 500+ | 3.29 грн |
| 1000+ | 2.84 грн |
| 1500+ | 2.62 грн |
| BCW71 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 110...220
Kind of package: reel; tape
Frequency: 330MHz
Collector current: 0.5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 110...220
Kind of package: reel; tape
Frequency: 330MHz
Collector current: 0.5A
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| FDD86102LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Mounting: SMD
Power dissipation: 54W
Gate charge: 26nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 40mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Mounting: SMD
Power dissipation: 54W
Gate charge: 26nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 40mΩ
на замовлення 1134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.34 грн |
| 5+ | 114.06 грн |
| 10+ | 100.64 грн |
| 50+ | 73.80 грн |
| 75+ | 68.77 грн |
| 100+ | 64.58 грн |
| 250+ | 55.35 грн |
| 500+ | 54.51 грн |
| MMBD4148se |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
на замовлення 1167 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 59+ | 7.21 грн |
| 93+ | 4.55 грн |
| 108+ | 3.89 грн |
| 250+ | 3.39 грн |
| 500+ | 3.17 грн |
| 1000+ | 3.00 грн |
| MMBD4148CA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Leakage current: 5µA
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Leakage current: 5µA
Capacitance: 4pF
на замовлення 392 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 56+ | 7.55 грн |
| 64+ | 6.63 грн |
| 92+ | 4.58 грн |
| 108+ | 3.89 грн |
| SMMSD4148T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| MC33064P-5G |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
на замовлення 386 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.87 грн |
| 14+ | 31.45 грн |
| 25+ | 28.18 грн |
| 100+ | 24.66 грн |
| 250+ | 24.49 грн |
| MC34064D-5G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 6.5V
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Threshold on-voltage: 4.61V
Number of channels: 1
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 6.5V
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Threshold on-voltage: 4.61V
Number of channels: 1
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| BZX85C18 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| MJD122T4G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Power dissipation: 1.75W
Type of transistor: NPN
Current gain: 300
Kind of package: reel; tape
Case: DPAK
Frequency: 4MHz
Collector current: 8A
Mounting: SMD
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Power dissipation: 1.75W
Type of transistor: NPN
Current gain: 300
Kind of package: reel; tape
Case: DPAK
Frequency: 4MHz
Collector current: 8A
Mounting: SMD
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 680 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.12 грн |
| 6+ | 70.61 грн |
| 10+ | 61.89 грн |
| 25+ | 51.07 грн |
| 50+ | 43.95 грн |
| 100+ | 37.91 грн |
| 200+ | 33.13 грн |
| 500+ | 28.93 грн |
| MJD127G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Current gain: 100...12000
Kind of package: tube
Frequency: 4MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Current gain: 100...12000
Kind of package: tube
Frequency: 4MHz
на замовлення 69 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 107.48 грн |
| 10+ | 87.05 грн |
| 25+ | 71.62 грн |
| MJD127T4G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
на замовлення 2496 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.77 грн |
| 10+ | 52.33 грн |
| 20+ | 46.21 грн |
| 50+ | 38.75 грн |
| 100+ | 33.63 грн |
| 200+ | 29.02 грн |
| 500+ | 25.16 грн |
| MJD122G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Current gain: 300
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Current gain: 300
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
на замовлення 358 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.74 грн |
| 6+ | 70.45 грн |
| 10+ | 52.83 грн |
| NJVMJD122T4G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| NJVMJD127T4G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
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од. на суму грн.
| NCP4305DDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCP4305DMNTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NCP4305DMTTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25256VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25256YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25256XI-T2 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NSVDTC143ZET1G |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.3W
Application: automotive industry
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.3W
Application: automotive industry
Current gain: 80...200
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В кошику
од. на суму грн.
| MC10EP16DG |
|
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Integrated circuit features: differential
Technology: ECL
Supply voltage: 3...5.5V
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Integrated circuit features: differential
Technology: ECL
Supply voltage: 3...5.5V
товару немає в наявності
В кошику
од. на суму грн.
| NDP6060L |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.01 грн |
| 10+ | 145.09 грн |
| NDS352AP |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.9A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.9A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±20V
на замовлення 2809 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.29 грн |
| 12+ | 35.89 грн |
| 14+ | 30.86 грн |
| 50+ | 22.14 грн |
| 100+ | 19.29 грн |
| 250+ | 16.27 грн |
| 500+ | 14.42 грн |
| 1000+ | 13.33 грн |
| FDV304P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -460mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -460mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 4001 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.13 грн |
| 70+ | 6.04 грн |
| 92+ | 4.58 грн |
| 105+ | 4.02 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.88 грн |
| 3000+ | 2.68 грн |
| FDV301N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 21530 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 48+ | 8.89 грн |
| 55+ | 7.72 грн |
| 78+ | 5.42 грн |
| 100+ | 4.66 грн |
| 500+ | 3.31 грн |
| 1000+ | 2.86 грн |
| 3000+ | 2.31 грн |
| 6000+ | 2.04 грн |
| FDV303N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 5233 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.77 грн |
| 34+ | 12.41 грн |
| 50+ | 8.99 грн |
| 100+ | 7.78 грн |
| 500+ | 5.51 грн |
| 1000+ | 4.70 грн |
| 1500+ | 4.28 грн |
| 3000+ | 3.61 грн |
| FDN360P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 4580 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.25 грн |
| 13+ | 32.54 грн |
| 15+ | 28.01 грн |
| 50+ | 19.37 грн |
| 100+ | 16.61 грн |
| 500+ | 12.08 грн |
| 1000+ | 10.73 грн |
| 1500+ | 10.15 грн |
| 3000+ | 9.14 грн |
| FDC658AP |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.1nC
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.1nC
Features of semiconductor devices: logic level
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.32 грн |
| 10+ | 42.77 грн |
| 12+ | 36.57 грн |
| FDN327N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
на замовлення 1556 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.64 грн |
| 16+ | 26.33 грн |
| 18+ | 23.40 грн |
| 50+ | 18.11 грн |
| 100+ | 16.10 грн |
| 500+ | 11.74 грн |
| 1000+ | 9.98 грн |
| 1500+ | 9.06 грн |
| ADT7461AARMZ-R |
|
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Threshold on-voltage: 2.55V
Supply voltage: 3...3.6V DC
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Threshold on-voltage: 2.55V
Supply voltage: 3...3.6V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ADT7461ARMZ-R7 |
|
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Threshold on-voltage: 2.55V
Supply voltage: 3...3.6V DC
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Threshold on-voltage: 2.55V
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
| ADT7461ARZ-REEL |
|
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Threshold on-voltage: 2.55V
Supply voltage: 3...3.6V DC
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Threshold on-voltage: 2.55V
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
| 20414-009-XTD |
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 35813.94 грн |
| MBR360RLG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
на замовлення 741 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.00 грн |
| 22+ | 19.62 грн |
| 23+ | 18.37 грн |
| 50+ | 17.36 грн |
| 100+ | 16.69 грн |
| 500+ | 13.50 грн |
| FGY160T65SPD-F085 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1043.15 грн |
| 5+ | 868.00 грн |
| AFGY160T65SPD-B4 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| FCD360N65S3R0 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 18nC
Technology: PowerTrench®
Semiconductor structure: single transistor
On-state resistance: 0.36Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 18nC
Technology: PowerTrench®
Semiconductor structure: single transistor
On-state resistance: 0.36Ω
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FCPF360N65S3R0L-F154 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 10A
Case: TO220
Gate-source voltage: 30V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 27W
Gate charge: 18nC
Technology: PowerTrench®
On-state resistance: 0.36Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 10A
Case: TO220
Gate-source voltage: 30V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 27W
Gate charge: 18nC
Technology: PowerTrench®
On-state resistance: 0.36Ω
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MM74HCT574WM |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HCT
на замовлення 263 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.77 грн |
| 12+ | 37.57 грн |
| 25+ | 34.89 грн |
| 74VHCT574AM |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHCT
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.