| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MC14175BDG | ONSEMI |
 Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: tube Trigger: positive-edge-triggered |
на замовлення 384 шт: термін постачання 21-30 дні (днів) |
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MC14174BDR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; 600uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 6 Technology: TTL Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Quiescent current: 600µA Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
MC14175BDR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
FQPF6N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of channel: enhancement Technology: QFET® Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
FQPF6N80CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 22A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 30nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
MUN5131DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
на замовлення 730 шт: термін постачання 21-30 дні (днів) |
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| SMUN5131DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Current gain: 8...15 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. |
| MC14175BDG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Trigger: positive-edge-triggered
на замовлення 384 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.57 грн |
| 15+ | 29.54 грн |
| 25+ | 26.80 грн |
| 48+ | 25.22 грн |
| 96+ | 23.65 грн |
| 240+ | 21.99 грн |
| 288+ | 21.66 грн |
| MC14174BDR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; 600uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: TTL
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; 600uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: TTL
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Trigger: positive-edge-triggered
товару немає в наявності
В кошику
од. на суму грн.
| MC14175BDR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| FQPF6N80C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of channel: enhancement
Technology: QFET®
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of channel: enhancement
Technology: QFET®
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| FQPF6N80CT |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| MUN5131DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.63 грн |
| 135+ | 3.10 грн |
| 500+ | 2.75 грн |
| SMUN5131DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.