| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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FQD6N40CTM | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.7A Power dissipation: 48W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1459 шт: термін постачання 14-30 дні (днів) |
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FQP11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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FQD9N25TM-F080 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 29.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC7905CTG | ONSEMI |
 Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -5V Output current: 1A Case: TO220AB Mounting: THT Manufacturer series: MC7900 Kind of package: tube Operating temperature: 0...125°C Number of channels: 1 Tolerance: ±4% Heatsink thickness: 0.508...0.61mm |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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| NV24C512MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: I2C Memory organisation: 64kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: uDFN8 Kind of interface: serial Kind of package: reel; tape Access time: 0.4ns Operating temperature: -40...125°C Clock frequency: 1MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAV24C512YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: I2C Memory organisation: 64kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: TSSOP8 Kind of interface: serial Kind of package: reel; tape Access time: 400ns Operating temperature: -40...125°C Clock frequency: 1MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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SA5534ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV Type of integrated circuit: operational amplifier Case: SO8 Mounting: SMT Integrated circuit features: low noise Bandwidth: 10MHz Input offset voltage: 2mV Slew rate: 13V/μs Operating temperature: -40...85°C Input bias current: 0.8µA Voltage supply range: ± 3...20V DC Kind of package: reel; tape Input offset current: 200nA Number of channels: single; 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJ802G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 90V Collector current: 30A Power dissipation: 200W Case: TO3; TO204 Current gain: 25...100 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
на замовлення 206 шт: термін постачання 14-30 дні (днів) |
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| PIR-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: NCS36000 development kits accessories features: motion sensor Type of accessories for development kits: expansion board Components: NCS36000 Kit contents: prototype board Connection: Pmod connector Interface: GPIO; I2C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBPC2508 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBPC2508W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC33274ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 24MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 10V/μs Input offset voltage: 1.8mV Kind of package: reel; tape |
на замовлення 914 шт: термін постачання 14-30 дні (днів) |
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MC33274ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV Type of integrated circuit: operational amplifier Bandwidth: 24MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 10V/μs Input offset voltage: 1.8mV Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 80nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33262PG | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Case: DIP8 Mounting: THT Kind of package: tube Application: SMPS Output current: 0.5A Operating voltage: 12...28V DC Output voltage: 6.4V |
на замовлення 52 шт: термін постачання 14-30 дні (днів) |
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MC33262DR2G | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC Type of integrated circuit: PMIC Output voltage: 6.4V Output current: 0.5A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating voltage: 12...28V DC Application: SMPS Kind of integrated circuit: PFC controller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC597ADR2G | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13 Type of integrated circuit: digital Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Number of channels: 1 Manufacturer series: HC Operating temperature: -55...125°C Technology: CMOS Number of inputs: 13 Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FOD4216 | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us Output voltage: 600V Case: DIP6 Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA Mounting: THT Manufacturer series: FOD4216 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| FOD4216SD | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape Output voltage: 600V Kind of package: reel; tape Case: SMT6 Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA Mounting: SMD Manufacturer series: FOD4216 Kind of output: triac Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| FOD4216SDV | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape Output voltage: 600V Kind of package: reel; tape Case: SMT6 Conform to the norm: VDE Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA Mounting: SMD Manufacturer series: FOD4216 Kind of output: triac Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| FOD4216SV | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube Output voltage: 600V Kind of package: tube Case: SMT6 Conform to the norm: VDE Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA Mounting: SMD Manufacturer series: FOD4216 Kind of output: triac Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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FOD4216TV | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube Output voltage: 600V Kind of package: tube Case: DIP6 Conform to the norm: VDE Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA Mounting: THT Manufacturer series: FOD4216 Kind of output: triac Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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FOD4216V | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube Output voltage: 600V Kind of package: tube Case: DIP6 Conform to the norm: VDE Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA Mounting: THT Manufacturer series: FOD4216 Kind of output: triac Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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MJ15025G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
на замовлення 221 шт: термін постачання 14-30 дні (днів) |
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MJ15023G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 200V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
на замовлення 185 шт: термін постачання 14-30 дні (днів) |
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MJ15015G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 15A Power dissipation: 180W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 6MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJ15016G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 15A Power dissipation: 115W Case: TO3 Mounting: THT Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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D45H11G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube Frequency: 40MHz |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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2SC5569-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89 Collector-emitter voltage: 50V Power dissipation: 1.3W Polarisation: bipolar Type of transistor: NPN Current gain: 560...200 Kind of package: reel; tape Case: SOT89 Frequency: 330MHz Collector current: 7A Mounting: SMD |
на замовлення 166 шт: термін постачання 14-30 дні (днів) |
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2SC5566-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89 Collector-emitter voltage: 50V Power dissipation: 1.3W Polarisation: bipolar Type of transistor: NPN Current gain: 200...560 Kind of package: reel; tape Case: SOT89 Frequency: 400MHz Collector current: 4A Mounting: SMD |
на замовлення 712 шт: термін постачання 14-30 дні (днів) |
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NSVBAT54HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Kind of package: reel; tape Max. forward impulse current: 0.6A Application: automotive industry |
на замовлення 2564 шт: термін постачання 14-30 дні (днів) |
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MJF44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220FP Mounting: THT Kind of package: tube Current gain: 60 Frequency: 50MHz |
на замовлення 415 шт: термін постачання 14-30 дні (днів) |
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MJB44H11G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSE44H11 | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: bulk Frequency: 50MHz Pulsed collector current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NJW44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 120W Case: TO3P Current gain: 100...320 Mounting: THT Kind of package: tube Frequency: 85MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NJVMJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N3442G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 10A Power dissipation: 117W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 800kHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC14520BDWR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB Type of integrated circuit: digital Kind of integrated circuit: binary up counter Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO16WB Family: HEF4000B Number of inputs: 3 Kind of package: reel; tape Supply voltage: 3...18V DC Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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NCV333ASN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5 Type of integrated circuit: operational amplifier Bandwidth: 350kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.15V/μs Integrated circuit features: zero-drift Input offset voltage: 30µV Kind of package: reel; tape Input bias current: 0.2nA Input offset current: 400pA |
на замовлення 2787 шт: термін постачання 14-30 дні (днів) |
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| KA1M0565RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -25...85°C Topology: flyback; forward On-state resistance: 2.2Ω Duty cycle factor: 74...80% Kind of package: tube Power: 140W Operating voltage: 10...25V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BC858CLT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 5435 шт: термін постачання 14-30 дні (днів) |
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BC858CDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC858CLT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
| MC74VHC4051DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
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1N4933G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4933RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Reverse recovery time: 300ns Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDA24N40F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN Gate-source voltage: ±30V Pulsed drain current: 92A Power dissipation: 235W Drain-source voltage: 400V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO3PN Kind of package: tube Polarisation: unipolar Gate charge: 60nC On-state resistance: 0.19Ω Drain current: 13.8A |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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| SMF05T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; ESD; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6...7.2V Max. forward impulse current: 1A Peak pulse power dissipation: 0.2kW Semiconductor structure: common anode Version: ESD Mounting: SMD Case: SC88A Max. off-state voltage: 5V Leakage current: 5µA Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMUN2111LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 20500 шт: термін постачання 14-30 дні (днів) |
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SMMUN2111LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry |
на замовлення 1200 шт: термін постачання 14-30 дні (днів) |
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MMUN2111LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMMUN2111LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
| MC34151DR2G | ONSEMI |
Category: Gates, inverters Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOIC8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 6.5...18V Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 14ns Pulse fall time: 16ns Kind of output: MOSFET driver Maximum output current: 1.5A Power dissipation: 0.56W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| GBPC3506W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5242B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; CASE017AG; single diode; bulk; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N52xxB |
на замовлення 2527 шт: термін постачання 14-30 дні (днів) |
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1N5242BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; CASE017AG; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N52xxB |
на замовлення 833 шт: термін постачання 14-30 дні (днів) |
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| 1N5247BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 17V; CASE017AG; single diode; reel,tape Mounting: THT Manufacturer series: 1N52xxB Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE017AG Zener voltage: 17V Type of diode: Zener Tolerance: ±5% |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| 1N5240BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; CASE017AG; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5243B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; CASE017AG; single diode; bulk; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. |
| FQD6N40CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1459 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 128.01 грн |
| 10+ | 74.71 грн |
| 25+ | 65.03 грн |
| 100+ | 53.83 грн |
| 250+ | 47.80 грн |
| FQP11N40C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.69 грн |
| 4+ | 129.05 грн |
| 10+ | 99.33 грн |
| 27+ | 93.39 грн |
| FQD9N25TM-F080 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
товару немає в наявності
В кошику
од. на суму грн.
| MC7905CTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 1A
Case: TO220AB
Mounting: THT
Manufacturer series: MC7900
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Tolerance: ±4%
Heatsink thickness: 0.508...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 1A
Case: TO220AB
Mounting: THT
Manufacturer series: MC7900
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Tolerance: ±4%
Heatsink thickness: 0.508...0.61mm
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.14 грн |
| 20+ | 21.73 грн |
| 25+ | 19.70 грн |
| 50+ | 19.61 грн |
| NV24C512MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Kind of package: reel; tape
Access time: 0.4ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Kind of package: reel; tape
Access time: 0.4ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV24C512YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Kind of package: reel; tape
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Kind of package: reel; tape
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SA5534ADR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low noise
Bandwidth: 10MHz
Input offset voltage: 2mV
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input bias current: 0.8µA
Voltage supply range: ± 3...20V DC
Kind of package: reel; tape
Input offset current: 200nA
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low noise
Bandwidth: 10MHz
Input offset voltage: 2mV
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input bias current: 0.8µA
Voltage supply range: ± 3...20V DC
Kind of package: reel; tape
Input offset current: 200nA
Number of channels: single; 1
товару немає в наявності
В кошику
од. на суму грн.
| MJ802G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 547.68 грн |
| 5+ | 416.02 грн |
| 10+ | 371.87 грн |
| 50+ | 360.83 грн |
| PIR-GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
development kits accessories features: motion sensor
Type of accessories for development kits: expansion board
Components: NCS36000
Kit contents: prototype board
Connection: Pmod connector
Interface: GPIO; I2C
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
development kits accessories features: motion sensor
Type of accessories for development kits: expansion board
Components: NCS36000
Kit contents: prototype board
Connection: Pmod connector
Interface: GPIO; I2C
товару немає в наявності
В кошику
од. на суму грн.
| GBPC2508 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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В кошику
од. на суму грн.
| GBPC2508W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| MC33274ADR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
на замовлення 914 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.66 грн |
| 8+ | 58.16 грн |
| 10+ | 45.42 грн |
| 24+ | 40.84 грн |
| 25+ | 39.56 грн |
| 66+ | 38.63 грн |
| 100+ | 37.19 грн |
| MC33274ADTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
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В кошику
од. на суму грн.
| MC33262PG |
|
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 64.92 грн |
| 10+ | 53.49 грн |
| MC33262DR2G |
|
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Output voltage: 6.4V
Output current: 0.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 12...28V DC
Application: SMPS
Kind of integrated circuit: PFC controller
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Output voltage: 6.4V
Output current: 0.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 12...28V DC
Application: SMPS
Kind of integrated circuit: PFC controller
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од. на суму грн.
| MC74HC597ADR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Number of channels: 1
Manufacturer series: HC
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 13
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Number of channels: 1
Manufacturer series: HC
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 13
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| FOD4216 |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Output voltage: 600V
Case: DIP6
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: THT
Manufacturer series: FOD4216
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Output voltage: 600V
Case: DIP6
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: THT
Manufacturer series: FOD4216
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
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Мінімальне замовлення: 1000 шт
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| FOD4216SD |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Output voltage: 600V
Kind of package: reel; tape
Case: SMT6
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Output voltage: 600V
Kind of package: reel; tape
Case: SMT6
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
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Мінімальне замовлення: 1000 шт
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| FOD4216SDV |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Output voltage: 600V
Kind of package: reel; tape
Case: SMT6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Output voltage: 600V
Kind of package: reel; tape
Case: SMT6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
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Мінімальне замовлення: 1000 шт
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| FOD4216SV |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Output voltage: 600V
Kind of package: tube
Case: SMT6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Output voltage: 600V
Kind of package: tube
Case: SMT6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: SMD
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
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Мінімальне замовлення: 1000 шт
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| FOD4216TV |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Output voltage: 600V
Kind of package: tube
Case: DIP6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: THT
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Output voltage: 600V
Kind of package: tube
Case: DIP6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: THT
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
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Мінімальне замовлення: 1000 шт
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| FOD4216V |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Output voltage: 600V
Kind of package: tube
Case: DIP6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: THT
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Output voltage: 600V
Kind of package: tube
Case: DIP6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Mounting: THT
Manufacturer series: FOD4216
Kind of output: triac
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
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Мінімальне замовлення: 1000 шт
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| MJ15025G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
на замовлення 221 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 657.40 грн |
| 3+ | 439.79 грн |
| 7+ | 416.02 грн |
| 50+ | 399.89 грн |
| MJ15023G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 636.37 грн |
| 3+ | 425.36 грн |
| 7+ | 401.58 грн |
| MJ15015G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 6MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 6MHz
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| MJ15016G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
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| D45H11G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.72 грн |
| 10+ | 46.61 грн |
| 2SC5569-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 560...200
Kind of package: reel; tape
Case: SOT89
Frequency: 330MHz
Collector current: 7A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 560...200
Kind of package: reel; tape
Case: SOT89
Frequency: 330MHz
Collector current: 7A
Mounting: SMD
на замовлення 166 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 84.12 грн |
| 10+ | 44.15 грн |
| 50+ | 35.49 грн |
| 100+ | 32.09 грн |
| 2SC5566-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 400MHz
Collector current: 4A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 400MHz
Collector current: 4A
Mounting: SMD
на замовлення 712 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 68.57 грн |
| 11+ | 40.07 грн |
| 50+ | 30.82 грн |
| 100+ | 27.42 грн |
| 500+ | 20.38 грн |
| NSVBAT54HT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Application: automotive industry
на замовлення 2564 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.06 грн |
| 67+ | 6.37 грн |
| 84+ | 5.09 грн |
| 100+ | 4.28 грн |
| 120+ | 3.57 грн |
| 200+ | 2.98 грн |
| 500+ | 2.34 грн |
| 1000+ | 2.31 грн |
| MJF44H11G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Current gain: 60
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Current gain: 60
Frequency: 50MHz
на замовлення 415 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.48 грн |
| 10+ | 101.03 грн |
| 50+ | 76.41 грн |
| MJB44H11G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
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| MJB44H11T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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| KSE44H11 |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
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| NJW44H11G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
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| NJVMJB44H11T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| 2N3442G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
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| FQPF11N40C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
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| MC14520BDWR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: binary up counter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Number of inputs: 3
Kind of package: reel; tape
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: binary up counter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Number of inputs: 3
Kind of package: reel; tape
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
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Мінімальне замовлення: 1000 шт
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| NCV333ASN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
на замовлення 2787 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.46 грн |
| 12+ | 37.70 грн |
| 13+ | 33.79 грн |
| 25+ | 29.38 грн |
| 50+ | 27.51 грн |
| KA1M0565RYDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
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| BC858CLT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 5435 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 74+ | 6.22 грн |
| 130+ | 3.28 грн |
| 159+ | 2.68 грн |
| 500+ | 1.90 грн |
| 1000+ | 1.67 грн |
| 1044+ | 0.93 грн |
| 2870+ | 0.88 грн |
| BC858CDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| BC858CLT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MC74VHC4051DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
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Мінімальне замовлення: 5000 шт
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| 1N4933G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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| 1N4933RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
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| FDA24N40F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Gate-source voltage: ±30V
Pulsed drain current: 92A
Power dissipation: 235W
Drain-source voltage: 400V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO3PN
Kind of package: tube
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 0.19Ω
Drain current: 13.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Gate-source voltage: ±30V
Pulsed drain current: 92A
Power dissipation: 235W
Drain-source voltage: 400V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO3PN
Kind of package: tube
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 0.19Ω
Drain current: 13.8A
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.98 грн |
| 10+ | 220.74 грн |
| SMF05T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; ESD; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...7.2V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Version: ESD
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; ESD; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...7.2V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Version: ESD
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
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| MMUN2111LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 20500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.14 грн |
| 71+ | 6.03 грн |
| 103+ | 4.13 грн |
| 122+ | 3.48 грн |
| 250+ | 2.81 грн |
| 500+ | 2.40 грн |
| 928+ | 1.04 грн |
| 2550+ | 0.98 грн |
| SMMUN2111LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
на замовлення 1200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.97 грн |
| 66+ | 6.45 грн |
| 111+ | 3.85 грн |
| 295+ | 3.27 грн |
| 500+ | 2.97 грн |
| MMUN2111LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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Мінімальне замовлення: 10000 шт
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| SMMUN2111LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
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Мінімальне замовлення: 10000 шт
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| MC34151DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Kind of output: MOSFET driver
Maximum output current: 1.5A
Power dissipation: 0.56W
Integrated circuit features: MOSFET
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Kind of output: MOSFET driver
Maximum output current: 1.5A
Power dissipation: 0.56W
Integrated circuit features: MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| GBPC3506W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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| 1N5242B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
на замовлення 2527 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.31 грн |
| 120+ | 3.57 грн |
| 162+ | 2.63 грн |
| 188+ | 2.26 грн |
| 250+ | 2.06 грн |
| 500+ | 1.91 грн |
| 1000+ | 1.77 грн |
| 2500+ | 1.56 грн |
| 1N5242BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
на замовлення 833 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.06 грн |
| 139+ | 3.06 грн |
| 162+ | 2.63 грн |
| 223+ | 1.91 грн |
| 241+ | 1.77 грн |
| 500+ | 1.59 грн |
| 1N5247BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 17V; CASE017AG; single diode; reel,tape
Mounting: THT
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 17V
Type of diode: Zener
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 17V; CASE017AG; single diode; reel,tape
Mounting: THT
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 17V
Type of diode: Zener
Tolerance: ±5%
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| 1N5240BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: reel; tape
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| 1N5243B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
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