| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NCP81143MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; QFN36; buck; 4÷6.5VDC Type of integrated circuit: PMIC Output current: 850µA Frequency: 220...1000kHz Mounting: SMD Case: QFN36 Topology: buck Number of channels: 1 Operating temperature: -40...100°C Operating voltage: 4...6.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FUSB15200MNTWG | ONSEMI |
Category: Battery and battery cells controllersDescription: IC: interface; QFN40; 3÷5.5V; 24MHz; Interface: I2C Application: for controller; USB Interface: I2C Case: QFN40 Mounting: SMD Operating temperature: -40...85°C DC supply current: 330µA Supply voltage: 3...5.5V Frequency: 24MHz Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NC7SP14P5X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C Operating temperature: -40...85°C Mounting: SMD Kind of input: with Schmitt trigger Kind of gate: NOT Quiescent current: 0.9µA Number of channels: single; 1 Supply voltage: 0.9...3.6V DC Number of inputs: 1 Type of integrated circuit: digital Case: SC70-5 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NC7WP14P6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C Operating temperature: -40...85°C Mounting: SMD Kind of input: with Schmitt trigger Kind of gate: NOT Quiescent current: 0.9µA Number of channels: dual; 2 Supply voltage: 0.9...3.6V DC Number of inputs: 1 Type of integrated circuit: digital Case: SC70-6 Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT4106HV4-GT2 | ONSEMI |
Category: LED drivers Description: Driver; DC/DC converter,LED driver; Uout: 24V; 175mA; TQFN16; SMD Topology: boost Kind of integrated circuit: DC/DC converter; LED driver Type of integrated circuit: driver Integrated circuit features: PWM Mounting: SMD Case: TQFN16 Operating temperature: -40...85°C Output current: 0.175A Number of channels: 4 Supply voltage: 3...5.5V DC Output voltage: 24V Frequency: 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT9532HV6I-GT2 | ONSEMI |
Category: LED driversDescription: IC: driver; boost,buck; Ch: 16; 2.3÷5.5V; 400kHz; 1W Type of integrated circuit: driver Input voltage: 2.3...5.5V Mounting: SMD Frequency: 400kHz Topology: boost; buck Number of channels: 16 Power dissipation: 1W Operating temperature: -40...85°C DC supply current: 550µA |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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FDD8876 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 47nC On-state resistance: 13mΩ Power dissipation: 70W Drain current: 73A Gate-source voltage: ±20V Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS8876 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 91A; 2.5W; SO8 Kind of package: reel; tape Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 36nC On-state resistance: 14.1mΩ Power dissipation: 2.5W Drain current: 12.5A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 91A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCV887601D1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Case: SO8 Type of integrated circuit: PMIC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN53730UC01X | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; WLCSP12; SMD; reel,tape Kind of package: reel; tape Type of integrated circuit: PMIC Mounting: SMD Kind of integrated circuit: DC/DC converter Case: WLCSP12 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MPSA29 | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Current gain: 10k Mounting: THT Kind of package: bulk Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP112G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MUR220G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; bulk; Ifsm: 35A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MUR220RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 35A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SD1623S-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V Current gain: 140...280 Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar Case: SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SD1620-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89 Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Collector current: 3A Collector-emitter voltage: 10V Current gain: 140 Frequency: 200MHz Kind of package: reel; tape Polarisation: bipolar Case: SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SD1623T-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V Current gain: 200...400 Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar Case: SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SD1628G-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89 Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Collector current: 5A Collector-emitter voltage: 20V Current gain: 280...560 Frequency: 120MHz Kind of package: reel; tape Polarisation: bipolar Case: SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BD244C | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Case: TO220 Mounting: THT Frequency: 3MHz Power: 65W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD244C | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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SMUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry Polarisation: bipolar Kind of transistor: BRT |
на замовлення 2414 шт: термін постачання 14-30 дні (днів) |
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MMBTH10LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.225/0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz Current gain: 60...240 |
на замовлення 1286 шт: термін постачання 14-30 дні (днів) |
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| MMBTH10-4LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 800MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBTH10M3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.64W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMMBTH10LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23; automotive industry Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBSS63LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB Mounting: SMD Frequency: 50MHz Application: automotive industry Polarisation: bipolar Type of transistor: PNP Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.225W Current gain: 30 Collector-emitter voltage: 100V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NZT902 | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 90V; 3A; 1W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 90V Collector current: 3A Power dissipation: 1W Case: SOT223-4; TO261-4 Current gain: 25 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN251015MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SMD; reel,tape Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN251030MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SMD; reel,tape Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN251040MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SMD; reel,tape Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBAS16W1T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 3ns; SC88; Ufmax: 1.2V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 3ns Semiconductor structure: triple independent Case: SC88 Max. forward voltage: 1.2V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP3065DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Input voltage: 3...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 110...190kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 3...40V DC |
на замовлення 1977 шт: термін постачання 14-30 дні (днів) |
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MC74ACT153DR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 2 Number of inputs: 7 Technology: TTL Mounting: SMD Case: SOIC16 Manufacturer series: ACT Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVR5124PLT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23 Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Case: SOT23 Drain-source voltage: -60V Drain current: -0.67A Power dissipation: 0.19W On-state resistance: 0.23Ω Gate-source voltage: ±20V Mounting: SMD |
на замовлення 2499 шт: термін постачання 14-30 дні (днів) |
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MBR130T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape Mounting: SMD Semiconductor structure: single diode Case: SOD123 Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.47V Load current: 1A Max. forward impulse current: 5.5A Max. off-state voltage: 30V |
на замовлення 13095 шт: термін постачання 14-30 дні (днів) |
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MURD620CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 6A Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: DPAK Max. forward voltage: 1.2V Kind of package: reel; tape |
на замовлення 2710 шт: термін постачання 14-30 дні (днів) |
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MURB1620CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.895V Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Max. load current: 16A Max. forward impulse current: 100A |
на замовлення 640 шт: термін постачання 14-30 дні (днів) |
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| MURF1620CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 16A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 100A |
на замовлення 86 шт: термін постачання 14-30 дні (днів) |
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| MBRD620CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 20V; 3Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 3A x2 Semiconductor structure: common cathode; double Case: DPAK Max. forward voltage: 0.85V Kind of package: reel; tape Max. load current: 6A Max. forward impulse current: 75A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MSRD620CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 6A; 55ns; DPAK; Ufmax: 1.35V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 6A Reverse recovery time: 55ns Semiconductor structure: common cathode; double Case: DPAK Max. forward voltage: 1.35V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MURB1620CTRT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 16A Reverse recovery time: 85ns Semiconductor structure: common anode; double Case: D2PAK Max. forward voltage: 1.2V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVUB1620CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.895V Kind of package: reel; tape Max. load current: 16A Application: automotive industry Max. forward impulse current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVUB1620CTRT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 85ns Semiconductor structure: common anode; double Case: D2PAK Max. forward voltage: 1.2V Kind of package: reel; tape Max. load current: 16A Application: automotive industry Max. forward impulse current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SNRVUD620CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 6A Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: DPAK Max. forward voltage: 1.2V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBR8170TFSTWG | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; WDFN8; SMD Mounting: SMD Type of diode: Schottky rectifying Case: WDFN8 Leakage current: 30µA Max. forward voltage: 0.89V Max. forward impulse current: 140A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZESD8704MTWTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; WDFN10; Ch: 4; reel,tape Application: automotive industry Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Semiconductor structure: unidirectional Case: WDFN10 Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMA2002NZ | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 2.9A; Idm: 10A; 1.5W; ESD Kind of channel: enhancement Version: ESD Mounting: SMD Case: MicroFET Type of transistor: N-MOSFET x2 Kind of package: reel; tape Polarisation: unipolar Gate charge: 3nC On-state resistance: 268mΩ Power dissipation: 1.5W Drain current: 2.9A Pulsed drain current: 10A Gate-source voltage: ±12V Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1SMA5931BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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| SZ1SMA5931BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
товару немає в наявності |
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MUN2211T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
на замовлення 27747 шт: термін постачання 14-30 дні (днів) |
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MUN2211T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
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В кошику од. на суму грн. | ||||||||||||||||||
| SMUN2211T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
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В кошику од. на суму грн. | |||||||||||||||||||
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SMCJ43A | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 50.3V; 200A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 43V Breakdown voltage: 50.3V Max. forward impulse current: 200A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
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| FCH023N65S3L4 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 65.8A Pulsed drain current: 300A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 19.5mΩ Mounting: THT Gate charge: 222nC Kind of package: tube Kind of channel: enhancement |
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| FCH060N80-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 36.8A Pulsed drain current: 174A Power dissipation: 500W Case: TO247 Gate-source voltage: ±20V On-state resistance: 54mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
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| NTHL082N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhancement |
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| NCP1076BAP065G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Type of integrated circuit: PMIC Topology: flyback Kind of integrated circuit: AC/DC switcher; PWM controller Case: DIP8 Output current: 0.65A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 6.5...20V DC Frequency: 59...71kHz On-state resistance: 6.8Ω |
на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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ESD7351XV2T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF Type of diode: TVS Version: ESD Max. off-state voltage: 3.3V Breakdown voltage: 5V Mounting: SMD Leakage current: 1nA Kind of package: reel; tape Capacitance: 0.43...0.6pF Peak pulse power dissipation: 0.15W Case: SOD523 |
на замовлення 201 шт: термін постачання 14-30 дні (днів) |
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ESD7551N2T5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 3.3V Breakdown voltage: 5V Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Capacitance: 0.22...0.35pF Peak pulse power dissipation: 0.25W Case: CASE714AB; X2DFN2 |
на замовлення 341 шт: термін постачання 14-30 дні (днів) |
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| NCP81143MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN36; buck; 4÷6.5VDC
Type of integrated circuit: PMIC
Output current: 850µA
Frequency: 220...1000kHz
Mounting: SMD
Case: QFN36
Topology: buck
Number of channels: 1
Operating temperature: -40...100°C
Operating voltage: 4...6.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN36; buck; 4÷6.5VDC
Type of integrated circuit: PMIC
Output current: 850µA
Frequency: 220...1000kHz
Mounting: SMD
Case: QFN36
Topology: buck
Number of channels: 1
Operating temperature: -40...100°C
Operating voltage: 4...6.5V DC
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| FUSB15200MNTWG |
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Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; QFN40; 3÷5.5V; 24MHz; Interface: I2C
Application: for controller; USB
Interface: I2C
Case: QFN40
Mounting: SMD
Operating temperature: -40...85°C
DC supply current: 330µA
Supply voltage: 3...5.5V
Frequency: 24MHz
Type of integrated circuit: interface
Category: Battery and battery cells controllers
Description: IC: interface; QFN40; 3÷5.5V; 24MHz; Interface: I2C
Application: for controller; USB
Interface: I2C
Case: QFN40
Mounting: SMD
Operating temperature: -40...85°C
DC supply current: 330µA
Supply voltage: 3...5.5V
Frequency: 24MHz
Type of integrated circuit: interface
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| NC7SP14P5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Operating temperature: -40...85°C
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: NOT
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Case: SC70-5
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Operating temperature: -40...85°C
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: NOT
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Case: SC70-5
Kind of package: reel; tape
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| NC7WP14P6X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Operating temperature: -40...85°C
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: NOT
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Case: SC70-6
Technology: CMOS
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Operating temperature: -40...85°C
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: NOT
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Case: SC70-6
Technology: CMOS
Kind of package: reel; tape
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| CAT4106HV4-GT2 |
Виробник: ONSEMI
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; Uout: 24V; 175mA; TQFN16; SMD
Topology: boost
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
Integrated circuit features: PWM
Mounting: SMD
Case: TQFN16
Operating temperature: -40...85°C
Output current: 0.175A
Number of channels: 4
Supply voltage: 3...5.5V DC
Output voltage: 24V
Frequency: 1MHz
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; Uout: 24V; 175mA; TQFN16; SMD
Topology: boost
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
Integrated circuit features: PWM
Mounting: SMD
Case: TQFN16
Operating temperature: -40...85°C
Output current: 0.175A
Number of channels: 4
Supply voltage: 3...5.5V DC
Output voltage: 24V
Frequency: 1MHz
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| CAT9532HV6I-GT2 |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; boost,buck; Ch: 16; 2.3÷5.5V; 400kHz; 1W
Type of integrated circuit: driver
Input voltage: 2.3...5.5V
Mounting: SMD
Frequency: 400kHz
Topology: boost; buck
Number of channels: 16
Power dissipation: 1W
Operating temperature: -40...85°C
DC supply current: 550µA
Category: LED drivers
Description: IC: driver; boost,buck; Ch: 16; 2.3÷5.5V; 400kHz; 1W
Type of integrated circuit: driver
Input voltage: 2.3...5.5V
Mounting: SMD
Frequency: 400kHz
Topology: boost; buck
Number of channels: 16
Power dissipation: 1W
Operating temperature: -40...85°C
DC supply current: 550µA
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 69.84 грн |
| FDD8876 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 13mΩ
Power dissipation: 70W
Drain current: 73A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 13mΩ
Power dissipation: 70W
Drain current: 73A
Gate-source voltage: ±20V
Drain-source voltage: 30V
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| FDS8876 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 91A; 2.5W; SO8
Kind of package: reel; tape
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 14.1mΩ
Power dissipation: 2.5W
Drain current: 12.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 91A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 91A; 2.5W; SO8
Kind of package: reel; tape
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 14.1mΩ
Power dissipation: 2.5W
Drain current: 12.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 91A
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| NCV887601D1R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
Mounting: SMD
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| FAN53730UC01X |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP12; SMD; reel,tape
Kind of package: reel; tape
Type of integrated circuit: PMIC
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Case: WLCSP12
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP12; SMD; reel,tape
Kind of package: reel; tape
Type of integrated circuit: PMIC
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Case: WLCSP12
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| MPSA29 |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: bulk
Frequency: 125MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: bulk
Frequency: 125MHz
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| TIP112G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
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| MUR220G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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| MUR220RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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| 2SD1623S-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT89
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| 2SD1620-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Current gain: 140
Frequency: 200MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Current gain: 140
Frequency: 200MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT89
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| 2SD1623T-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT89
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| 2SD1628G-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 280...560
Frequency: 120MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 280...560
Frequency: 120MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT89
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| BD244C |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
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| BD244C |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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| MUN5113DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 80 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.91 грн |
| SMUN5113DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 2414 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.01 грн |
| 41+ | 10.31 грн |
| 100+ | 6.34 грн |
| 500+ | 4.56 грн |
| 1000+ | 4.00 грн |
| MMBTH10LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.225/0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Current gain: 60...240
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.225/0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Current gain: 60...240
на замовлення 1286 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.27 грн |
| 81+ | 5.15 грн |
| 95+ | 4.41 грн |
| 127+ | 3.29 грн |
| 160+ | 2.61 грн |
| 174+ | 2.39 грн |
| MMBTH10-4LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
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| MMBTH10M3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
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| NSVMMBTH10LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Application: automotive industry
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| NSVBSS63LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Frequency: 50MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.225W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Frequency: 50MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.225W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
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| NZT902 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 90V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Current gain: 25
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 90V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Current gain: 25
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
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| FAN251015MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
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| FAN251030MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
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| FAN251040MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
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| NSVBAS16W1T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3ns; SC88; Ufmax: 1.2V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3ns
Semiconductor structure: triple independent
Case: SC88
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3ns; SC88; Ufmax: 1.2V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3ns
Semiconductor structure: triple independent
Case: SC88
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| NCP3065DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3...40V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3...40V DC
на замовлення 1977 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.17 грн |
| 10+ | 74.83 грн |
| MC74ACT153DR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 2
Number of inputs: 7
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 2
Number of inputs: 7
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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| NVR5124PLT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
On-state resistance: 0.23Ω
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
On-state resistance: 0.23Ω
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 2499 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.87 грн |
| 15+ | 28.77 грн |
| 50+ | 21.12 грн |
| 100+ | 18.46 грн |
| 500+ | 13.39 грн |
| 1000+ | 12.55 грн |
| MBR130T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
на замовлення 13095 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.53 грн |
| 42+ | 9.98 грн |
| 46+ | 9.15 грн |
| 59+ | 7.10 грн |
| 100+ | 6.30 грн |
| 500+ | 4.91 грн |
| 1000+ | 4.47 грн |
| 1500+ | 4.26 грн |
| 3000+ | 3.95 грн |
| MURD620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
на замовлення 2710 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.60 грн |
| 15+ | 29.43 грн |
| 16+ | 27.02 грн |
| 20+ | 24.86 грн |
| 50+ | 22.36 грн |
| 100+ | 20.62 грн |
| 200+ | 19.12 грн |
| 500+ | 17.29 грн |
| 1000+ | 16.13 грн |
| MURB1620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.895V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.895V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
Max. forward impulse current: 100A
на замовлення 640 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.08 грн |
| 5+ | 102.26 грн |
| 10+ | 82.31 грн |
| 20+ | 73.16 грн |
| 50+ | 64.02 грн |
| 100+ | 59.03 грн |
| MURF1620CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 100A
на замовлення 86 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.67 грн |
| 5+ | 101.43 грн |
| 10+ | 89.79 грн |
| 25+ | 76.49 грн |
| 50+ | 69.01 грн |
| MBRD620CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 20V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.85V
Kind of package: reel; tape
Max. load current: 6A
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 20V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.85V
Kind of package: reel; tape
Max. load current: 6A
Max. forward impulse current: 75A
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| MSRD620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 55ns; DPAK; Ufmax: 1.35V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 55ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 1.35V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 55ns; DPAK; Ufmax: 1.35V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 55ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 1.35V
Kind of package: reel; tape
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| MURB1620CTRT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 85ns
Semiconductor structure: common anode; double
Case: D2PAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 85ns
Semiconductor structure: common anode; double
Case: D2PAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
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| NRVUB1620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.895V
Kind of package: reel; tape
Max. load current: 16A
Application: automotive industry
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.895V
Kind of package: reel; tape
Max. load current: 16A
Application: automotive industry
Max. forward impulse current: 100A
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| NRVUB1620CTRT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 85ns
Semiconductor structure: common anode; double
Case: D2PAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
Max. load current: 16A
Application: automotive industry
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 85ns
Semiconductor structure: common anode; double
Case: D2PAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
Max. load current: 16A
Application: automotive industry
Max. forward impulse current: 100A
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| SNRVUD620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
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| MBR8170TFSTWG |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Mounting: SMD
Type of diode: Schottky rectifying
Case: WDFN8
Leakage current: 30µA
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Mounting: SMD
Type of diode: Schottky rectifying
Case: WDFN8
Leakage current: 30µA
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
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| SZESD8704MTWTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; WDFN10; Ch: 4; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Case: WDFN10
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; WDFN10; Ch: 4; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Case: WDFN10
Number of channels: 4
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| FDMA2002NZ |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.9A; Idm: 10A; 1.5W; ESD
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Case: MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3nC
On-state resistance: 268mΩ
Power dissipation: 1.5W
Drain current: 2.9A
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.9A; Idm: 10A; 1.5W; ESD
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Case: MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3nC
On-state resistance: 268mΩ
Power dissipation: 1.5W
Drain current: 2.9A
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
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| 1SMA5931BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.57 грн |
| SZ1SMA5931BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| MUN2211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
на замовлення 27747 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.16 грн |
| 100+ | 4.16 грн |
| 143+ | 2.91 грн |
| 169+ | 2.47 грн |
| 500+ | 1.62 грн |
| 1000+ | 1.39 грн |
| 3000+ | 1.15 грн |
| 6000+ | 1.06 грн |
| 9000+ | 1.01 грн |
| MUN2211T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
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| SMUN2211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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| SMCJ43A |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50.3V; 200A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 50.3V
Max. forward impulse current: 200A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50.3V; 200A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 50.3V
Max. forward impulse current: 200A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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| FCH023N65S3L4 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 65.8A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 19.5mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 65.8A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 19.5mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
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| FCH060N80-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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| NTHL082N65S3HF |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
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| NCP1076BAP065G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP8
Output current: 0.65A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 6.5...20V DC
Frequency: 59...71kHz
On-state resistance: 6.8Ω
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP8
Output current: 0.65A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 6.5...20V DC
Frequency: 59...71kHz
On-state resistance: 6.8Ω
на замовлення 195 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.41 грн |
| 10+ | 98.10 грн |
| 50+ | 88.13 грн |
| ESD7351XV2T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Peak pulse power dissipation: 0.15W
Case: SOD523
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Peak pulse power dissipation: 0.15W
Case: SOD523
на замовлення 201 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.16 грн |
| 81+ | 5.15 грн |
| 91+ | 4.57 грн |
| 127+ | 3.28 грн |
| ESD7551N2T5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
на замовлення 341 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.64 грн |
| 53+ | 7.98 грн |
| 65+ | 6.48 грн |
| 108+ | 3.86 грн |
| 112+ | 3.73 грн |



















