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MC74AC240DTR2G MC74AC240DTR2G ONSEMI mc74ac240-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
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MC74AC240DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286EBB46A0D3&compId=MC74AC240-D.pdf?ci_sign=38baec39d0fbda6785826ac14f5e607ca22014f1 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MMBT3906 MMBT3906 ONSEMI MMBT3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NLU2G04MUTCG ONSEMI nlu2g04-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Kind of gate: NOT
Quiescent current: 40µA
Number of inputs: 1
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NLU2G04AMUTCG ONSEMI nlu2g04-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Kind of gate: NOT
Quiescent current: 40µA
Number of inputs: 1
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NLX2G04AMUTCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E635D03D8B60D3&compId=NLX2G04-D.pdf?ci_sign=e631b6e0df6de14733e69637f3c44d3c228151e5 Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; MiniGate
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Family: NLX
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Manufacturer series: MiniGate
Kind of gate: NOT
Number of inputs: 1
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FCH125N60E ONSEMI ONSM-S-A0003584881-1.pdf?t.download=true&u=5oefqw fch125n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FCP125N60E ONSEMI fcp125n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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NTP125N60S5H ONSEMI ntp125n60s5h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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ADP3120AJRZ-RL ADP3120AJRZ-RL ONSEMI adp3120a-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
на замовлення 739 шт:
термін постачання 21-30 дні (днів)
6+72.47 грн
11+36.69 грн
25+32.53 грн
100+29.80 грн
500+26.36 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FNB41560
+1
 		FNB41560 ONSEMI fnb41560b2-d.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 34W
Collector-emitter voltage: 600V
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
1+1203.59 грн
3+1009.47 грн
12+901.31 грн
24+777.13 грн
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SBAS16XV2T5G SBAS16XV2T5G ONSEMI bas16xv2t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 10666 шт:
термін постачання 21-30 дні (днів)
35+12.77 грн
50+8.89 грн
100+7.53 грн
500+6.81 грн
8000+6.01 грн
Мінімальне замовлення: 35
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GBU8K GBU8K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
5+88.13 грн
20+77.71 грн
100+69.70 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS3672 FDS3672 ONSEMI fds3672-d.pdf 9bfa8338f5f3101f72a3028f5286341d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.8A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2456 шт:
термін постачання 21-30 дні (днів)
5+88.00 грн
6+72.10 грн
10+65.70 грн
50+52.88 грн
100+48.87 грн
250+44.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDB13AN06A0 FDB13AN06A0 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDCF668936BE28&compId=FDB13AN06A0.pdf?ci_sign=0382b24b12a43822867ce764f1ed0e10d5eac849 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 761 шт:
термін постачання 21-30 дні (днів)
5+88.13 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FFSD10120A ONSEMI ffsd10120a-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
Technology: SiC
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FSBB15CH120D ONSEMI fsbb15ch120d-d.pdf Category: Motor and PWM drivers
Description: IC: driver; DIP; 15A; 1.2kV; 20kHz
Type of integrated circuit: driver
Case: DIP
Output current: 15A
Mounting: THT
Frequency: 20kHz
Output voltage: 1.2kV
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
10+1917.98 грн
20+1603.13 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
NCP160AFCS280T2G ONSEMI ncp160-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.25A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP160
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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NCP161AFCS280T2G ONSEMI ncp161-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.8V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP161
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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DTA124EET1G ONSEMI dta124e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Power dissipation: 0.2W
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NTMFSC004N08MC ONSEMI ntmfsc004n08mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 43.4nC
On-state resistance: 4mΩ
Power dissipation: 127W
Drain current: 136A
Pulsed drain current: 487A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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FQP24N08 FQP24N08 ONSEMI fqp24n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 17A; Idm: 96A; 75W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 60mΩ
Power dissipation: 75W
Drain current: 17A
Pulsed drain current: 96A
Gate-source voltage: ±25V
Drain-source voltage: 80V
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FDMS4D4N08C ONSEMI fdms4d4n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
Case: Power56
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 7.2mΩ
Power dissipation: 125W
Drain current: 78A
Pulsed drain current: 498A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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LC709205FXE-01TBG ONSEMI lc709205f-d.pdf Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po
Kind of integrated circuit: battery charging controller
Mounting: SMD
Interface: I2C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP12
Operating temperature: -40...85°C
Supply voltage: 2.5...5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
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FSL206MRLX ONSEMI fsl206mr-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...115°C
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 66...78%
Power: 7W
Application: SMPS
Operating voltage: 7...24.5V DC
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MOC3042SR2M ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SR2VM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SVM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042TVM ONSEMI MOC3043M-D.PDF moc3043m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042VM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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GBPC1204 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.4kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC12005 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 50V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1201W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1206W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1201 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1206 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1208W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.8kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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MOC3082M MOC3082M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BA93849DF2D0FA8&compId=MOC3083M.pdf?ci_sign=9a3ffa2a6a60a05a9564f35d35517a533d1f8281 Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
3+144.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2N7002W 2N7002W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A9F45190CDF640C1&compId=2N7002W-FAI.pdf?ci_sign=87b74bd00bc6d2e3c2b48ac5592ee058e02e71fd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Power dissipation: 0.2W
Drain current: 0.115A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 1470 шт:
термін постачання 21-30 дні (днів)
19+23.30 грн
30+13.54 грн
50+8.81 грн
100+7.37 грн
500+5.29 грн
1000+4.73 грн
Мінімальне замовлення: 19
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MMUN2138LT1G MMUN2138LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CEE4525614D820&compId=MMUN2138.pdf?ci_sign=13fff0826151110797b2f655b7c6cae1984706fe Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
на замовлення 3640 шт:
термін постачання 21-30 дні (днів)
100+4.31 грн
148+2.72 грн
226+1.78 грн
500+1.37 грн
1000+1.24 грн
3000+1.07 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
MUN5138T1G ONSEMI DTA123T-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
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MUN5238T1G ONSEMI DTC123T-D.PDF dtc123t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
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MBRB1545CTT4G ONSEMI mbrb1545ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 15A
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SBRB1545CTG ONSEMI mbrb1545ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 15A
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MMBTA92 MMBTA92 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D66C6EB7A70A50&compId=MMBTA92-DTE.PDF?ci_sign=07397f4496537557f17dd7185ae7e21f99b317c4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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MSQA6V1W5T2G ONSEMI msqa6v1w5t2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
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FQB8P10TM FQB8P10TM ONSEMI ONSM-S-A0006944028-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQD8P10TM-F085 FQD8P10TM-F085 ONSEMI fqd8p10tm_f085-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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2SD1628G-TD-E ONSEMI EN1781-D.html Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 280...560
Polarisation: bipolar
Frequency: 120MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
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2SD1620-TD-E ONSEMI en1719-d.html Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
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2SD1623S-TD-E ONSEMI en1727-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140...280
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
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2SD1623T-TD-E ONSEMI en1727-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 200...400
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
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FGD3245G2-F085C ONSEMI fgd3245g2-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Case: DPAK
Version: ESD
Type of transistor: IGBT
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 23nC
Gate-emitter voltage: ±10V
Collector current: 23A
Power dissipation: 150W
Collector-emitter voltage: 450V
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FDD2670 FDD2670 ONSEMI fdd2670-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.6A
Pulsed drain current: 20A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCS20166SN2T1G ONSEMI ncs20166-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; rail-to-rail
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
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NCV20166SN2T1G ONSEMI ncs20166-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
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STZD3155CT1G ONSEMI Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
4000+4.75 грн
Мінімальне замовлення: 4000
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MC14044BDR2G MC14044BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE730960D3&compId=MC14043B-D.pdf?ci_sign=888ddb241efe128fc89c8562974b5b38f1bd73c1 Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 3...18V DC
Number of channels: 4
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FSA5157P6X FSA5157P6X ONSEMI fsa5157-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷4.3VDC; reel,tape; CMOS
Type of integrated circuit: analog switch
Number of channels: 1
Case: SC70-6; SC88
Supply voltage: 1.65...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 500nA
Technology: CMOS
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FGY100T120SWD ONSEMI fgy100t120swd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
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MC74AC240DTR2G mc74ac240-d.pdf
MC74AC240DTR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
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MC74AC240DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286EBB46A0D3&compId=MC74AC240-D.pdf?ci_sign=38baec39d0fbda6785826ac14f5e607ca22014f1
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MMBT3906 MMBT3906.pdf
MMBT3906
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NLU2G04MUTCG nlu2g04-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Kind of gate: NOT
Quiescent current: 40µA
Number of inputs: 1
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NLU2G04AMUTCG nlu2g04-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Kind of gate: NOT
Quiescent current: 40µA
Number of inputs: 1
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NLX2G04AMUTCG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E635D03D8B60D3&compId=NLX2G04-D.pdf?ci_sign=e631b6e0df6de14733e69637f3c44d3c228151e5
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; MiniGate
Type of integrated circuit: digital
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Family: NLX
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of integrated circuit: inverter
Manufacturer series: MiniGate
Kind of gate: NOT
Number of inputs: 1
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FCH125N60E ONSM-S-A0003584881-1.pdf?t.download=true&u=5oefqw fch125n60e-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FCP125N60E fcp125n60e-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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NTP125N60S5H ntp125n60s5h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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ADP3120AJRZ-RL adp3120a-d.pdf
ADP3120AJRZ-RL
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
на замовлення 739 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+72.47 грн
11+36.69 грн
25+32.53 грн
100+29.80 грн
500+26.36 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FNB41560 fnb41560b2-d.pdf
FNB41560
+1
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 34W
Collector-emitter voltage: 600V
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1203.59 грн
3+1009.47 грн
12+901.31 грн
24+777.13 грн
В кошику  од. на суму  грн.
SBAS16XV2T5G bas16xv2t1-d.pdf
SBAS16XV2T5G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 10666 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+12.77 грн
50+8.89 грн
100+7.53 грн
500+6.81 грн
8000+6.01 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
GBU8K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa
GBU8K
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+88.13 грн
20+77.71 грн
100+69.70 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS3672 fds3672-d.pdf 9bfa8338f5f3101f72a3028f5286341d.pdf
FDS3672
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.8A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2456 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+88.00 грн
6+72.10 грн
10+65.70 грн
50+52.88 грн
100+48.87 грн
250+44.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDB13AN06A0 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDCF668936BE28&compId=FDB13AN06A0.pdf?ci_sign=0382b24b12a43822867ce764f1ed0e10d5eac849
FDB13AN06A0
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 761 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+88.13 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FFSD10120A ffsd10120a-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
Technology: SiC
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FSBB15CH120D fsbb15ch120d-d.pdf
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; DIP; 15A; 1.2kV; 20kHz
Type of integrated circuit: driver
Case: DIP
Output current: 15A
Mounting: THT
Frequency: 20kHz
Output voltage: 1.2kV
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+1917.98 грн
20+1603.13 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
NCP160AFCS280T2G ncp160-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.25A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP160
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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NCP161AFCS280T2G ncp161-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.8V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP161
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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DTA124EET1G dta124e-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Power dissipation: 0.2W
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NTMFSC004N08MC ntmfsc004n08mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 43.4nC
On-state resistance: 4mΩ
Power dissipation: 127W
Drain current: 136A
Pulsed drain current: 487A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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FQP24N08 fqp24n08-d.pdf
FQP24N08
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 17A; Idm: 96A; 75W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 60mΩ
Power dissipation: 75W
Drain current: 17A
Pulsed drain current: 96A
Gate-source voltage: ±25V
Drain-source voltage: 80V
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FDMS4D4N08C fdms4d4n08c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
Case: Power56
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 7.2mΩ
Power dissipation: 125W
Drain current: 78A
Pulsed drain current: 498A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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LC709205FXE-01TBG lc709205f-d.pdf
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po
Kind of integrated circuit: battery charging controller
Mounting: SMD
Interface: I2C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP12
Operating temperature: -40...85°C
Supply voltage: 2.5...5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
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FSL206MRLX fsl206mr-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 600mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...115°C
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 66...78%
Power: 7W
Application: SMPS
Operating voltage: 7...24.5V DC
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MOC3042SR2M MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SR2VM MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SVM MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042TVM MOC3043M-D.PDF moc3043m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042VM MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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GBPC1204 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.4kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC12005 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 50V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1201W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1206W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1201 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1206 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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GBPC1208W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 12A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.8kV
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Leads: wire Ø 1.0mm
Case: GBPC-W
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
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MOC3082M pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BA93849DF2D0FA8&compId=MOC3083M.pdf?ci_sign=9a3ffa2a6a60a05a9564f35d35517a533d1f8281
MOC3082M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+144.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2N7002W pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A9F45190CDF640C1&compId=2N7002W-FAI.pdf?ci_sign=87b74bd00bc6d2e3c2b48ac5592ee058e02e71fd
2N7002W
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Power dissipation: 0.2W
Drain current: 0.115A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 1470 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+23.30 грн
30+13.54 грн
50+8.81 грн
100+7.37 грн
500+5.29 грн
1000+4.73 грн
Мінімальне замовлення: 19
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MMUN2138LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED998CEE4525614D820&compId=MMUN2138.pdf?ci_sign=13fff0826151110797b2f655b7c6cae1984706fe
MMUN2138LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
на замовлення 3640 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.31 грн
148+2.72 грн
226+1.78 грн
500+1.37 грн
1000+1.24 грн
3000+1.07 грн
Мінімальне замовлення: 100
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MUN5138T1G DTA123T-D.PDF
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
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MUN5238T1G DTC123T-D.PDF dtc123t-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Quantity in set/package: 3000pcs.
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MBRB1545CTT4G mbrb1545ct-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 15A
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SBRB1545CTG mbrb1545ct-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 15A
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MMBTA92 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D66C6EB7A70A50&compId=MMBTA92-DTE.PDF?ci_sign=07397f4496537557f17dd7185ae7e21f99b317c4
MMBTA92
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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MSQA6V1W5T2G msqa6v1w5t2-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
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FQB8P10TM ONSM-S-A0006944028-1.pdf?t.download=true&u=5oefqw
FQB8P10TM
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQD8P10TM-F085 fqd8p10tm_f085-d.pdf
FQD8P10TM-F085
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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2SD1628G-TD-E EN1781-D.html
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 280...560
Polarisation: bipolar
Frequency: 120MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
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2SD1620-TD-E en1719-d.html
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
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2SD1623S-TD-E en1727-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140...280
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
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2SD1623T-TD-E en1727-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 200...400
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
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FGD3245G2-F085C fgd3245g2-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Case: DPAK
Version: ESD
Type of transistor: IGBT
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 23nC
Gate-emitter voltage: ±10V
Collector current: 23A
Power dissipation: 150W
Collector-emitter voltage: 450V
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FDD2670 fdd2670-d.pdf
FDD2670
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.6A
Pulsed drain current: 20A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCS20166SN2T1G ncs20166-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; rail-to-rail
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
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NCV20166SN2T1G ncs20166-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
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STZD3155CT1G
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+4.75 грн
Мінімальне замовлення: 4000
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MC14044BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE730960D3&compId=MC14043B-D.pdf?ci_sign=888ddb241efe128fc89c8562974b5b38f1bd73c1
MC14044BDR2G
Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 3...18V DC
Number of channels: 4
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FSA5157P6X fsa5157-d.pdf
FSA5157P6X
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷4.3VDC; reel,tape; CMOS
Type of integrated circuit: analog switch
Number of channels: 1
Case: SC70-6; SC88
Supply voltage: 1.65...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 500nA
Technology: CMOS
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FGY100T120SWD fgy100t120swd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
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