| Фото | Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||||||
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| SMMBD2837LT1G | ONSEMI |  Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; reel,tape Case: SOT23 Application: automotive industry Semiconductor structure: common cathode; double Mounting: SMD Kind of package: reel; tape Type of diode: switching Reverse recovery time: 4ns Load current: 0.15A Max. forward impulse current: 450mA Max. forward voltage: 1.2V Max. off-state voltage: 75V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NTHL185N60S5H | ONSEMI |  Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 116W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 25nC Pulsed drain current: 53A | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NTMT185N60S5H | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 116W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 25nC Pulsed drain current: 53A | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| BC846ALT3G | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 100mA; 225mW; SOT23; general purpose Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23 Current gain: 110 Mounting: SMD Frequency: 100MHz Application: general purpose | на замовлення 20000 шт:термін постачання 21-30 дні (днів) | 
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| NTMFS4C020NT1G | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 370A Pulsed drain current: 900A Power dissipation: 161W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 670µΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS4C022NT1G | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 136A; Idm: 900A; 64W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 136A Pulsed drain current: 900A Power dissipation: 64W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 20.8nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | PZTA42T1G | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz | на замовлення 433 шт:термін постачання 21-30 дні (днів) | 
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| SPZTA42T1G | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: tape Frequency: 50MHz Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| FCD1300N80Z | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 16.2nC On-state resistance: 1.3Ω Drain current: 4A Pulsed drain current: 12A Gate-source voltage: ±20V Power dissipation: 52W Drain-source voltage: 800V Kind of package: reel; tape Case: DPAK | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NCV4299CD133R2G | ONSEMI |  Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Output voltage: 3.3V Output current: 0.15A Number of channels: 1 Application: automotive industry Kind of package: reel; tape Case: SO8 | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | BZX84C10LT1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 0.2µA | на замовлення 6096 шт:термін постачання 21-30 дні (днів) | 
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|   | MMSZ10T1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxT1G | на замовлення 5830 шт:термін постачання 21-30 дні (днів) | 
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| MMSZ5241B | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| SZMMSZ5241BT1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | 2SB1123S-TD-E | ONSEMI |  Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | NCP1012ST100T3G | ONSEMI |  Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 0.1MHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 11Ω Operating voltage: 8.5...10V DC Duty cycle factor: 0...72% Kind of package: reel; tape Application: SMPS | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
| NCP1072STAT3G | ONSEMI |  Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 59...71kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NCP1072STBT3G | ONSEMI |  Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 90...110kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | MUN5214DW1T1G | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 | на замовлення 6100 шт:термін постачання 21-30 дні (днів) | 
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|   | SMUN5214DW1T1G | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ | на замовлення 2987 шт:термін постачання 21-30 дні (днів) | 
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|   | SMUN5214T1G | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Kind of transistor: BRT Case: SC70; SOT323 Type of transistor: NPN Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 47kΩ Application: automotive industry Polarisation: bipolar | на замовлення 2730 шт:термін постачання 21-30 дні (днів) | 
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| MC14517BDWR2G | ONSEMI |  Category: Shift registers Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB Type of integrated circuit: digital Kind of integrated circuit: 64bit; static shift register Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO16WB Family: HEF4000B Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NCV59745AMW180TAG | ONSEMI |  Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Number of channels: 1 Output voltage: 1.8V Output current: 3A Application: automotive industry Mounting: SMD | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | BSS64LT1G | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz | на замовлення 1800 шт:термін постачання 21-30 дні (днів) | 
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|   | RB751V40T1G | ONSEMI |  Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape | на замовлення 5747 шт:термін постачання 21-30 дні (днів) | 
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| NSVRB751V40T1G | ONSEMI |  Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.5A | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NLU2G17AMX1TCG | ONSEMI |  Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: ULLGA6 Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS Operating temperature: -55...125°C Quiescent current: 40µA | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NLX2G17AMX1TCG | ONSEMI |  Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; ULLGA6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: ULLGA6 Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Kind of input: with Schmitt trigger | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NXV08A170DB2 | ONSEMI |  Category: Transistor modules MOSFET Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V Drain-source voltage: 80V Drain current: 200A Case: APM12-CBA Gate-source voltage: ±20V On-state resistance: 2.4mΩ Kind of package: in-tray Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: THT Topology: MOSFET half-bridge Semiconductor structure: transistor/transistor | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| 1N5369BG | ONSEMI |  Category: THT Zener diodes Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| MC100EP11DTG | ONSEMI |  Category: Level translators Description: IC: digital; fanout buffer; PECL; SMD; TSSOP8; -40÷85°C; OUT: 2; 3GHz Type of integrated circuit: digital Kind of integrated circuit: fanout buffer Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Number of outputs: 2 Frequency: 3GHz Technology: PECL Manufacturer series: 100EP | на замовлення 100 шт:термін постачання 21-30 дні (днів) | 
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|   | MMUN2133LT1G | ONSEMI |  Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.246W Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ | на замовлення 1 шт:термін постачання 21-30 дні (днів) | 
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| NSVMMUN2133LT1G | ONSEMI |  Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.4W Collector-emitter voltage: 50V Current gain: 80...140 Quantity in set/package: 3000pcs. Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| VEONSVMMUN2133LT1G | ONSEMI | Category: Unclassified Description: VEONSVMMUN2133LT1G | на замовлення 993000 шт:термін постачання 21-30 дні (днів) | 
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| NCP1203P60G | ONSEMI |  Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Mounting: THT Case: DIP8 Topology: flyback Number of channels: 1 Operating temperature: 0...125°C Operating voltage: 7.8...16V DC Kind of package: tube Application: SMPS | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| 2SB1201S-TL-E | ONSEMI |  Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.8W Collector current: 2A Collector-emitter voltage: 50V Current gain: 140...280 Frequency: 150MHz Polarisation: bipolar | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | MMSZ4684T1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ4xxT1G Leakage current: 7.5µA | на замовлення 5655 шт:термін постачання 21-30 дні (днів) | 
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|   | FDPF320N06L | ONSEMI |  Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 30.2nC Kind of package: tube Kind of channel: enhancement Technology: PowerTrench® Features of semiconductor devices: logic level Pulsed drain current: 84A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
| NLSX4401MU1TCG | ONSEMI |  Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; 1.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Supply voltage: 1.5...5.5V DC Mounting: SMD Case: uDFN6 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 1 Number of outputs: 1 Integrated circuit features: auto-direction sensing Frequency: 24MHz | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | MBRA140T3G | ONSEMI |  Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. load current: 2A Max. forward voltage: 0.74V | на замовлення 5809 шт:термін постачання 21-30 дні (днів) | 
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| TCA0372BDWR2G | ONSEMI |  Category: SMD operational amplifiers Description: IC: operational amplifier Type of integrated circuit: operational amplifier | на замовлення 1000 шт:термін постачання 21-30 дні (днів) | 
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| NRVUB1620CTRT4G | ONSEMI |  Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V Application: automotive industry Semiconductor structure: common anode; double Case: D2PAK Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Reverse recovery time: 85ns Max. forward voltage: 1.2V Load current: 8A x2 Max. forward impulse current: 100A Max. load current: 16A Max. off-state voltage: 200V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | MBR745G | ONSEMI |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.57V Max. load current: 7.5A | на замовлення 117 шт:термін постачання 21-30 дні (днів) | 
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| NTTFS020N06CTAG | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS020N06CTAG | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| NVTFWS020N06CTAG | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | MUR820G | ONSEMI |    Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 0.975V Max. load current: 16A Reverse recovery time: 35ns Heatsink thickness: max. 1.4mm | на замовлення 682 шт:термін постачання 21-30 дні (днів) | 
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| SZBZX84C2V4ET1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| SZBZX84C2V4LT1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode; 50uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50µA Manufacturer series: BZX84C Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | 50C02CH-TL-E | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.7W; CPH3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.7W Case: CPH3 Current gain: 300...800 Mounting: SMD Kind of package: reel; tape Frequency: 500MHz | на замовлення 257 шт:термін постачання 21-30 дні (днів) | 
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|   | MMSZ4702T1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: MMSZ4xxT1G | на замовлення 6463 шт:термін постачання 21-30 дні (днів) | 
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| SZMMSZ4702T1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: MMSZ4xxT1G Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | MMSZ4696T1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: MMSZ4xxT1G | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | SZMMSZ4696T1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: MMSZ4xxT1G Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | 1N5934BG | ONSEMI |  Category: THT Zener diodes Description: Diode: Zener; 3W; 24V; bulk; CASE59; single diode; 1uA; 1N59xxB Manufacturer series: 1N59xxB Case: CASE59 Mounting: THT Semiconductor structure: single diode Type of diode: Zener Leakage current: 1µA Power dissipation: 3W Tolerance: ±5% Zener voltage: 24V Kind of package: bulk | на замовлення 1063 шт:термін постачання 21-30 дні (днів) | 
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|   | 1N5934BRLG | ONSEMI |  Category: THT Zener diodes Description: Diode: Zener; 3W; 24V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Manufacturer series: 1N59xxB Case: CASE59 Mounting: THT Semiconductor structure: single diode Type of diode: Zener Leakage current: 1µA Power dissipation: 3W Tolerance: ±5% Zener voltage: 24V Kind of package: reel; tape | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | 1SMA5934BT3G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode Manufacturer series: 1SMA59xxBT3G Case: SMA Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 1.5W Tolerance: ±5% Zener voltage: 24V Kind of package: reel; tape | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | MMBZ5248BLT1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G Leakage current: 0.1µA | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
| MMBZ5248ELT1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxELT1G | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| SZMMBZ5248BLT1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G Application: automotive industry Leakage current: 0.1µA | товару немає в наявності | В кошику од. на суму грн. | 
| SMMBD2837LT1G |  | 
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; reel,tape
Case: SOT23
Application: automotive industry
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.15A
Max. forward impulse current: 450mA
Max. forward voltage: 1.2V
Max. off-state voltage: 75V
    Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; reel,tape
Case: SOT23
Application: automotive industry
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.15A
Max. forward impulse current: 450mA
Max. forward voltage: 1.2V
Max. off-state voltage: 75V
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| NTHL185N60S5H |  | 
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 116W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25nC
Pulsed drain current: 53A
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 116W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25nC
Pulsed drain current: 53A
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| NTMT185N60S5H |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 116W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 25nC
Pulsed drain current: 53A
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 116W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 25nC
Pulsed drain current: 53A
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| BC846ALT3G |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 225mW; SOT23; general purpose
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 110
Mounting: SMD
Frequency: 100MHz
Application: general purpose
    Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 225mW; SOT23; general purpose
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 110
Mounting: SMD
Frequency: 100MHz
Application: general purpose
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 10000+ | 1.05 грн | 
| NTMFS4C020NT1G |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 370A
Pulsed drain current: 900A
Power dissipation: 161W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 370A
Pulsed drain current: 900A
Power dissipation: 161W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMFS4C022NT1G |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 136A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 136A
Pulsed drain current: 900A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 20.8nC
Kind of package: reel; tape
Kind of channel: enhancement
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 136A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 136A
Pulsed drain current: 900A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 20.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PZTA42T1G |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
    Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 433 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 16+ | 28.27 грн | 
| 23+ | 18.06 грн | 
| 50+ | 13.52 грн | 
| 100+ | 12.01 грн | 
| 113+ | 8.27 грн | 
| 310+ | 7.80 грн | 
| SPZTA42T1G |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: tape
Frequency: 50MHz
Application: automotive industry
    Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: tape
Frequency: 50MHz
Application: automotive industry
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| FCD1300N80Z |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 1.3Ω
Drain current: 4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 52W
Drain-source voltage: 800V
Kind of package: reel; tape
Case: DPAK
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 1.3Ω
Drain current: 4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 52W
Drain-source voltage: 800V
Kind of package: reel; tape
Case: DPAK
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| NCV4299CD133R2G |  | 
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Output current: 0.15A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Case: SO8
    Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Output current: 0.15A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Case: SO8
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| BZX84C10LT1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.2µA
    Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.2µA
на замовлення 6096 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 72+ | 6.00 грн | 
| 112+ | 3.58 грн | 
| 166+ | 2.40 грн | 
| 196+ | 2.04 грн | 
| 250+ | 1.65 грн | 
| 500+ | 1.41 грн | 
| 1000+ | 1.22 грн | 
| 3000+ | 1.19 грн | 
| MMSZ10T1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 5830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 46+ | 9.42 грн | 
| 70+ | 5.73 грн | 
| 120+ | 3.33 грн | 
| 152+ | 2.63 грн | 
| 500+ | 1.68 грн | 
| 614+ | 1.52 грн | 
| 1000+ | 1.46 грн | 
| 1500+ | 1.38 грн | 
| MMSZ5241B |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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| SZMMSZ5241BT1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| 2SB1123S-TD-E |  | 
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
    Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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| NCP1012ST100T3G |  | 
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 0.1MHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 11Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
    Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 0.1MHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 11Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
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| NCP1072STAT3G |  | 
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
    Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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| NCP1072STBT3G |  | 
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
    Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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| MUN5214DW1T1G |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
    Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
на замовлення 6100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 27+ | 16.28 грн | 
| 44+ | 9.23 грн | 
| 100+ | 5.28 грн | 
| 428+ | 2.19 грн | 
| 1177+ | 2.07 грн | 
| SMUN5214DW1T1G |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
    Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 2987 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 50+ | 8.57 грн | 
| 100+ | 7.80 грн | 
| 250+ | 7.48 грн | 
| 500+ | 7.40 грн | 
| SMUN5214T1G |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Kind of transistor: BRT
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
    Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Kind of transistor: BRT
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Polarisation: bipolar
на замовлення 2730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 36+ | 11.99 грн | 
| 42+ | 9.55 грн | 
| 49+ | 8.27 грн | 
| 70+ | 5.73 грн | 
| 100+ | 4.82 грн | 
| 316+ | 2.95 грн | 
| 869+ | 2.78 грн | 
| MC14517BDWR2G |  | 
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
    Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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| NCV59745AMW180TAG |  | 
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 1.8V
Output current: 3A
Application: automotive industry
Mounting: SMD
    Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 1.8V
Output current: 3A
Application: automotive industry
Mounting: SMD
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| BSS64LT1G |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
    Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 34+ | 12.85 грн | 
| 52+ | 7.72 грн | 
| 75+ | 5.33 грн | 
| 100+ | 4.59 грн | 
| 407+ | 2.29 грн | 
| 1119+ | 2.17 грн | 
| RB751V40T1G |  | 
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
    Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
на замовлення 5747 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 60+ | 7.22 грн | 
| 85+ | 4.69 грн | 
| 109+ | 3.66 грн | 
| 123+ | 3.25 грн | 
| 500+ | 2.42 грн | 
| 533+ | 1.75 грн | 
| 1464+ | 1.65 грн | 
| 3000+ | 1.61 грн | 
| NSVRB751V40T1G |  | 
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.5A
    Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.5A
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| NLU2G17AMX1TCG |  | 
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Operating temperature: -55...125°C
Quiescent current: 40µA
    Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Operating temperature: -55...125°C
Quiescent current: 40µA
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| NLX2G17AMX1TCG |  | 
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; ULLGA6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
    Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; ULLGA6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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| NXV08A170DB2 |  | 
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: THT
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
    Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: THT
Topology: MOSFET half-bridge
Semiconductor structure: transistor/transistor
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| 1N5369BG |  | 
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
    Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| MC100EP11DTG |  | 
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; PECL; SMD; TSSOP8; -40÷85°C; OUT: 2; 3GHz
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Number of outputs: 2
Frequency: 3GHz
Technology: PECL
Manufacturer series: 100EP
    Category: Level translators
Description: IC: digital; fanout buffer; PECL; SMD; TSSOP8; -40÷85°C; OUT: 2; 3GHz
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Number of outputs: 2
Frequency: 3GHz
Technology: PECL
Manufacturer series: 100EP
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 100+ | 602.25 грн | 
| MMUN2133LT1G |  | 
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
    Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 428.34 грн | 
| NSVMMUN2133LT1G |  | 
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.4W
Collector-emitter voltage: 50V
Current gain: 80...140
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
    Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.4W
Collector-emitter voltage: 50V
Current gain: 80...140
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| VEONSVMMUN2133LT1G | 
на замовлення 993000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 6000+ | 1.19 грн | 
| NCP1203P60G |  | 
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
    Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
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| 2SB1201S-TL-E |  | 
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
    Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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| MMSZ4684T1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 7.5µA
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 7.5µA
на замовлення 5655 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 46+ | 9.42 грн | 
| 65+ | 6.13 грн | 
| 101+ | 3.95 грн | 
| 123+ | 3.25 грн | 
| 475+ | 1.97 грн | 
| 500+ | 1.96 грн | 
| 1000+ | 1.79 грн | 
| FDPF320N06L |  | 
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
Pulsed drain current: 84A
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
Pulsed drain current: 84A
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| NLSX4401MU1TCG |  | 
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 24MHz
    Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 24MHz
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| MBRA140T3G |  | 
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 2A
Max. forward voltage: 0.74V
    Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 2A
Max. forward voltage: 0.74V
на замовлення 5809 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 17+ | 26.56 грн | 
| 33+ | 12.33 грн | 
| 100+ | 10.02 грн | 
| 145+ | 6.44 грн | 
| 399+ | 6.13 грн | 
| TCA0372BDWR2G |  | 
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
    Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 1000+ | 56.54 грн | 
| NRVUB1620CTRT4G |  | 
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Application: automotive industry
Semiconductor structure: common anode; double
Case: D2PAK
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Reverse recovery time: 85ns
Max. forward voltage: 1.2V
Load current: 8A x2
Max. forward impulse current: 100A
Max. load current: 16A
Max. off-state voltage: 200V
    Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Application: automotive industry
Semiconductor structure: common anode; double
Case: D2PAK
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Reverse recovery time: 85ns
Max. forward voltage: 1.2V
Load current: 8A x2
Max. forward impulse current: 100A
Max. load current: 16A
Max. off-state voltage: 200V
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| MBR745G |  | 
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.57V
Max. load current: 7.5A
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.57V
Max. load current: 7.5A
на замовлення 117 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 7+ | 65.11 грн | 
| 8+ | 55.45 грн | 
| 10+ | 44.07 грн | 
| 25+ | 37.55 грн | 
| 69+ | 35.48 грн | 
| NTTFS020N06CTAG |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS020N06CTAG |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS020N06CTAG |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MUR820G |  |  | 
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
    Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
на замовлення 682 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 7+ | 70.25 грн | 
| 10+ | 54.33 грн | 
| 50+ | 44.79 грн | 
| 100+ | 41.05 грн | 
| 250+ | 36.75 грн | 
| 500+ | 35.80 грн | 
| SZBZX84C2V4ET1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
    Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C2V4LT1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode; 50uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: BZX84C
Application: automotive industry
    Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode; 50uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: BZX84C
Application: automotive industry
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| 50C02CH-TL-E |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.7W; CPH3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.7W
Case: CPH3
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
    Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.7W; CPH3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.7W
Case: CPH3
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
на замовлення 257 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 14+ | 31.70 грн | 
| 16+ | 25.30 грн | 
| 25+ | 22.04 грн | 
| 50+ | 19.17 грн | 
| 81+ | 11.61 грн | 
| 222+ | 10.98 грн | 
| MMSZ4702T1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
на замовлення 6463 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 53+ | 8.10 грн | 
| 84+ | 4.77 грн | 
| 104+ | 3.85 грн | 
| 124+ | 3.23 грн | 
| 148+ | 2.70 грн | 
| 250+ | 2.16 грн | 
| 500+ | 1.81 грн | 
| 629+ | 1.49 грн | 
| 1727+ | 1.41 грн | 
| SZMMSZ4702T1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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| MMSZ4696T1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
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| SZMMSZ4696T1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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| 1N5934BG |  | 
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; bulk; CASE59; single diode; 1uA; 1N59xxB
Manufacturer series: 1N59xxB
Case: CASE59
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: bulk
    Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; bulk; CASE59; single diode; 1uA; 1N59xxB
Manufacturer series: 1N59xxB
Case: CASE59
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: bulk
на замовлення 1063 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 14+ | 30.84 грн | 
| 17+ | 23.55 грн | 
| 20+ | 20.36 грн | 
| 83+ | 11.30 грн | 
| 228+ | 10.66 грн | 
| 1N5934BRLG |  | 
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Manufacturer series: 1N59xxB
Case: CASE59
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: reel; tape
    Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Manufacturer series: 1N59xxB
Case: CASE59
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: reel; tape
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| 1SMA5934BT3G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Manufacturer series: 1SMA59xxBT3G
Case: SMA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: reel; tape
    Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Manufacturer series: 1SMA59xxBT3G
Case: SMA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 24V
Kind of package: reel; tape
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| MMBZ5248BLT1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Leakage current: 0.1µA
    Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Leakage current: 0.1µA
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| MMBZ5248ELT1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
    Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
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| SZMMBZ5248BLT1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 0.1µA
    Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 0.1µA
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