| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQT13N06TF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223 Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 2.24A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 7.5nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 11.2A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQT13N06LTF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223 Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 2.24A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6.4nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 11.2A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF13N06L | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 7.1A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 6.4nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 40A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTH4L023N065M3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 225A Power dissipation: 122W Case: TO247-4 Gate-source voltage: -8...22V On-state resistance: 37mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTHL023N065M3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 49A Pulsed drain current: 218A Power dissipation: 131W Case: TO247-3 Gate-source voltage: -8...22V On-state resistance: 37mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMYS3D3N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 32W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 133A Pulsed drain current: 811A Power dissipation: 32W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 40.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMYS9D3N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 23W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTBL023N065M3S | ONSEMI |
Category: Unclassified Description: NTBL023N065M3S |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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| NCP702SN33T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.2A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP702SN30T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.2A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FAN9673Q | ONSEMI |
Category: Integrated circuits - othersDescription: IC: PMIC; PFC controller; LQFP32; 15V Type of integrated circuit: PMIC Mounting: SMD Supply voltage: 15V Case: LQFP32 Kind of integrated circuit: PFC controller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDC608PZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.8A Gate charge: 23nC On-state resistance: 43mΩ Gate-source voltage: ±12V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 2498 шт: термін постачання 21-30 дні (днів) |
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FDC606P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -12V Drain current: -6A Gate charge: 25nC On-state resistance: 53mΩ Gate-source voltage: ±8V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 2175 шт: термін постачання 21-30 дні (днів) |
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FDC602P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.5A On-state resistance: 53mΩ Gate-source voltage: ±12V Power dissipation: 1.6W Kind of channel: enhancement Kind of package: reel; tape |
на замовлення 2997 шт: термін постачання 21-30 дні (днів) |
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FDC604P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.5A Gate charge: 30nC On-state resistance: 60mΩ Gate-source voltage: ±8V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 468 шт: термін постачання 21-30 дні (днів) |
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FDC645N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: N-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.5A On-state resistance: 48mΩ Gate-source voltage: ±12V Power dissipation: 1.6W Kind of channel: enhancement Kind of package: reel; tape |
на замовлення 1444 шт: термін постачання 21-30 дні (днів) |
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FDC640P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Drain-source voltage: -20V Drain current: -4.5A Gate charge: 13nC On-state resistance: 80mΩ Power dissipation: 1.6W Gate-source voltage: ±12V Polarisation: unipolar Technology: PowerTrench® Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDC855N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.1A Pulsed drain current: 20A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 39.3mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDC8601 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 183mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDC8602 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.2A Pulsed drain current: 5A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDC6318P | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET x2 Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.5A Gate charge: 8nC On-state resistance: 0.2Ω Gate-source voltage: ±8V Power dissipation: 0.96W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 2789 шт: термін постачання 21-30 дні (днів) |
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FDC6303N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.68A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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FDC6327C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 2.7/-1.9A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.13/0.27Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1732 шт: термін постачання 21-30 дні (днів) |
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FDC6312P | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET x2 Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A On-state resistance: 0.15Ω Gate-source voltage: ±8V Power dissipation: 0.96W Kind of channel: enhancement Kind of package: reel; tape |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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FDC658P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Gate charge: 12nC On-state resistance: 80mΩ Gate-source voltage: ±20V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 2739 шт: термін постачання 21-30 дні (днів) |
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FDC638P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Gate charge: 14nC On-state resistance: 72mΩ Gate-source voltage: ±8V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 799 шт: термін постачання 21-30 дні (днів) |
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FDC655BN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 260 шт: термін постачання 21-30 дні (днів) |
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FDC638APZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Gate charge: 12nC On-state resistance: 72mΩ Gate-source voltage: ±12V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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FDC637BNZ | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: N-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Gate charge: 12nC On-state resistance: 41mΩ Gate-source voltage: ±20V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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FDC637AN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: N-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Gate charge: 16nC On-state resistance: 41mΩ Gate-source voltage: ±20V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 2258 шт: термін постачання 21-30 дні (днів) |
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FDC653N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 1890 шт: термін постачання 21-30 дні (днів) |
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FDC6310P | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET x2 Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A On-state resistance: 184mΩ Gate-source voltage: ±12V Power dissipation: 0.96W Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDC634P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Gate charge: 10nC On-state resistance: 0.13Ω Gate-source voltage: ±8V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDC6320C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Mounting: SMD Type of transistor: N/P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 0.22/-0.12A On-state resistance: 9/10Ω Gate-source voltage: ±8V Power dissipation: 0.9W Kind of channel: enhancement Kind of transistor: complementary pair Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDC6326L | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6 Kind of integrated circuit: high-side Kind of output: P-Channel Type of integrated circuit: power switch Kind of package: reel; tape Mounting: SMD Case: SuperSOT-6 On-state resistance: 0.125Ω Number of channels: 1 Output current: 1.8A Control voltage: 2.5...8V DC Supply voltage: 3...20V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDC654P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A On-state resistance: 0.115Ω Gate-source voltage: ±20V Power dissipation: 1.6W Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDC6329L | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Mounting: SMD Case: SuperSOT-6 Supply voltage: 2.5...8V DC Control voltage: 1.5...8V DC On-state resistance: 0.105Ω Number of channels: 1 Output current: 2.5A Kind of integrated circuit: high-side Kind of output: P-Channel Type of integrated circuit: power switch Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTGS4111PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6 Polarisation: unipolar Kind of package: reel; tape Type of transistor: P-MOSFET Case: TSOP6 Mounting: SMD Drain-source voltage: -30V Drain current: -2.7A On-state resistance: 60mΩ Kind of channel: enhancement Power dissipation: 1.25W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDD8880 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 58A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 1445 шт: термін постачання 21-30 дні (днів) |
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FDD8876 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 73A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 2031 шт: термін постачання 21-30 дні (днів) |
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BCW65ALT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 32V; 0.8A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 170 шт: термін постачання 21-30 дні (днів) |
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BCW65CLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 32V; 0.8A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1140 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT244ADTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD Type of integrated circuit: digital Family: VHCT Technology: CMOS; TTL Case: TSSOP20 Manufacturer series: VHCT Kind of package: tube Mounting: SMD Operating temperature: -40...125°C Number of channels: 8 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 3-state; bus buffer; line driver; octal Kind of output: 3-state |
на замовлення 219 шт: термін постачання 21-30 дні (днів) |
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74VHCT244AMTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Technology: CMOS Case: TSSOP20 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 40µA Number of channels: 8 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: buffer; line driver; non-inverting Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74VHCT244ADTRG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Technology: CMOS Case: TSSOP20 Manufacturer series: VHCT Mounting: SMD Operating temperature: -40...125°C Number of channels: 8 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: buffer; line driver; non-inverting Kind of output: 3-state |
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| MC74VHCT244ADWRG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD Type of integrated circuit: digital Family: VHCT Technology: CMOS; TTL Case: SO20WB Manufacturer series: VHCT Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 8 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 3-state; bus buffer; line driver; octal Kind of output: 3-state |
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| NCV8752AMX18TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN6 Output current: 0.2A Number of channels: 1 Output voltage: 1.8V Application: automotive industry |
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| NCV8752AMX28TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN6 Output current: 0.2A Number of channels: 1 Output voltage: 2.8V Application: automotive industry |
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| NCV8752ASN30T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1 Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: TSOP5 Output current: 0.2A Number of channels: 1 Output voltage: 3V Application: automotive industry |
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| NCV8752BMX18TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Output current: 0.2A Case: XDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NCV8752BMX28TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 0.2A Case: XDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NCV8752BMX33TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN6 Output current: 0.2A Number of channels: 1 Output voltage: 3.3V Application: automotive industry |
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| NCV8752BSN28T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: TSOP5 Output current: 0.2A Number of channels: 1 Output voltage: 2.8V Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NCV8752BSN30T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1 Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: TSOP5 Output current: 0.2A Number of channels: 1 Output voltage: 3V Application: automotive industry |
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|
FDS6682 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8 Case: SO8 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Mounting: SMD Gate charge: 31nC On-state resistance: 11.5mΩ Power dissipation: 2.5W Drain current: 14A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 50A Polarisation: unipolar |
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|
MBRD650CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 60V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. load current: 6A Kind of package: reel; tape |
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|
MBRS190T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.75V Kind of package: reel; tape |
на замовлення 1352 шт: термін постачання 21-30 дні (днів) |
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NLV14013BDTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape Mounting: SMD Operating temperature: -55...125°C Type of integrated circuit: digital Case: TSSOP14 Trigger: positive-edge-triggered Number of channels: 2 Supply voltage: 3...18V DC Kind of integrated circuit: D flip-flop Kind of package: reel; tape |
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|
NLV14001BDR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Technology: CMOS Type of integrated circuit: digital Case: SO14 Family: HEF4000B Kind of gate: NOR Number of channels: quad; 4 Number of inputs: 2 Supply voltage: 3...18V DC Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||
|
NLV14021BDR2G | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HEF4000B; -55÷125°C; 3÷18VDC Mounting: SMD Operating temperature: -55...125°C Technology: CMOS Type of integrated circuit: digital Case: SOIC16 Family: HEF4000B Number of channels: 1 Number of inputs: 11 Supply voltage: 3...18V DC Kind of integrated circuit: 8bit; asynchronous; parallel in; serial output; static shift register Kind of package: reel; tape |
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| FQT13N06TF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2.24A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 11.2A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2.24A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 11.2A
Polarisation: unipolar
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| FQT13N06LTF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2.24A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 11.2A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2.24A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 11.2A
Polarisation: unipolar
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| FQPF13N06L |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 7.1A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 40A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 7.1A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 40A
Polarisation: unipolar
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| NTH4L023N065M3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 225A
Power dissipation: 122W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 225A
Power dissipation: 122W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NTHL023N065M3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Pulsed drain current: 218A
Power dissipation: 131W
Case: TO247-3
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Pulsed drain current: 218A
Power dissipation: 131W
Case: TO247-3
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
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| NVMYS3D3N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMYS9D3N06CLTWG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTBL023N065M3S |
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 797.92 грн |
| NCP702SN33T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.2A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.2A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| NCP702SN30T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.2A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.2A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| FAN9673Q |
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Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
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| FDC608PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Gate charge: 23nC
On-state resistance: 43mΩ
Gate-source voltage: ±12V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Gate charge: 23nC
On-state resistance: 43mΩ
Gate-source voltage: ±12V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.43 грн |
| 17+ | 24.22 грн |
| 50+ | 20.22 грн |
| 100+ | 18.62 грн |
| 250+ | 16.78 грн |
| 500+ | 15.51 грн |
| FDC606P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Gate charge: 25nC
On-state resistance: 53mΩ
Gate-source voltage: ±8V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Gate charge: 25nC
On-state resistance: 53mΩ
Gate-source voltage: ±8V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 2175 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.97 грн |
| 10+ | 40.44 грн |
| 11+ | 37.33 грн |
| 50+ | 31.49 грн |
| 100+ | 31.17 грн |
| FDC602P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
On-state resistance: 53mΩ
Gate-source voltage: ±12V
Power dissipation: 1.6W
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
On-state resistance: 53mΩ
Gate-source voltage: ±12V
Power dissipation: 1.6W
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 2997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.78 грн |
| 13+ | 32.53 грн |
| 50+ | 24.94 грн |
| 100+ | 22.46 грн |
| 500+ | 19.02 грн |
| FDC604P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Gate charge: 30nC
On-state resistance: 60mΩ
Gate-source voltage: ±8V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Gate charge: 30nC
On-state resistance: 60mΩ
Gate-source voltage: ±8V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 468 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.76 грн |
| 13+ | 31.41 грн |
| 100+ | 20.62 грн |
| 250+ | 17.58 грн |
| FDC645N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: N-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.5A
On-state resistance: 48mΩ
Gate-source voltage: ±12V
Power dissipation: 1.6W
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: N-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.5A
On-state resistance: 48mΩ
Gate-source voltage: ±12V
Power dissipation: 1.6W
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 1444 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.09 грн |
| 10+ | 40.20 грн |
| 50+ | 30.13 грн |
| 100+ | 26.62 грн |
| 200+ | 23.66 грн |
| 500+ | 20.78 грн |
| FDC640P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 13nC
On-state resistance: 80mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 13nC
On-state resistance: 80mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDC855N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.1A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 39.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.1A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 39.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDC8601 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 183mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 183mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDC8602 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDC6318P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Gate-source voltage: ±8V
Power dissipation: 0.96W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Gate-source voltage: ±8V
Power dissipation: 0.96W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 2789 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.11 грн |
| 10+ | 42.84 грн |
| 25+ | 37.09 грн |
| 100+ | 29.57 грн |
| 250+ | 28.69 грн |
| FDC6303N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.76 грн |
| 14+ | 30.05 грн |
| 50+ | 20.22 грн |
| 100+ | 17.02 грн |
| 250+ | 13.75 грн |
| 500+ | 12.23 грн |
| FDC6327C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1732 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.28 грн |
| 10+ | 49.63 грн |
| 50+ | 37.01 грн |
| 100+ | 32.29 грн |
| 500+ | 24.38 грн |
| 1000+ | 22.14 грн |
| 1500+ | 21.02 грн |
| FDC6312P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
On-state resistance: 0.15Ω
Gate-source voltage: ±8V
Power dissipation: 0.96W
Kind of channel: enhancement
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
On-state resistance: 0.15Ω
Gate-source voltage: ±8V
Power dissipation: 0.96W
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.25 грн |
| 11+ | 36.45 грн |
| 50+ | 30.45 грн |
| FDC658P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Gate charge: 12nC
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Gate charge: 12nC
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 2739 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.25 грн |
| 9+ | 48.60 грн |
| 10+ | 43.88 грн |
| 50+ | 33.33 грн |
| 100+ | 29.57 грн |
| 250+ | 25.42 грн |
| 500+ | 23.58 грн |
| FDC638P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 14nC
On-state resistance: 72mΩ
Gate-source voltage: ±8V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 14nC
On-state resistance: 72mΩ
Gate-source voltage: ±8V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 799 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.73 грн |
| 16+ | 25.10 грн |
| 100+ | 20.30 грн |
| 250+ | 18.62 грн |
| 500+ | 17.50 грн |
| FDC655BN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.73 грн |
| 15+ | 27.50 грн |
| 50+ | 20.06 грн |
| 100+ | 17.34 грн |
| FDC638APZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 12nC
On-state resistance: 72mΩ
Gate-source voltage: ±12V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 12nC
On-state resistance: 72mΩ
Gate-source voltage: ±12V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.62 грн |
| 12+ | 33.97 грн |
| 50+ | 25.42 грн |
| 100+ | 22.06 грн |
| 500+ | 16.31 грн |
| 1000+ | 14.47 грн |
| 1500+ | 13.59 грн |
| 3000+ | 12.71 грн |
| FDC637BNZ |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: N-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Gate charge: 12nC
On-state resistance: 41mΩ
Gate-source voltage: ±20V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: N-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Gate charge: 12nC
On-state resistance: 41mΩ
Gate-source voltage: ±20V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.38 грн |
| 23+ | 17.90 грн |
| 25+ | 16.15 грн |
| 100+ | 11.59 грн |
| 500+ | 9.51 грн |
| 1000+ | 8.79 грн |
| FDC637AN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: N-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Gate charge: 16nC
On-state resistance: 41mΩ
Gate-source voltage: ±20V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: N-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Gate charge: 16nC
On-state resistance: 41mΩ
Gate-source voltage: ±20V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 2258 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.11 грн |
| 11+ | 37.01 грн |
| 100+ | 25.58 грн |
| FDC653N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.13 грн |
| 25+ | 26.14 грн |
| 100+ | 24.54 грн |
| 500+ | 23.58 грн |
| FDC6310P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
On-state resistance: 184mΩ
Gate-source voltage: ±12V
Power dissipation: 0.96W
Kind of channel: enhancement
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
On-state resistance: 184mΩ
Gate-source voltage: ±12V
Power dissipation: 0.96W
Kind of channel: enhancement
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| FDC634P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 10nC
On-state resistance: 0.13Ω
Gate-source voltage: ±8V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 10nC
On-state resistance: 0.13Ω
Gate-source voltage: ±8V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| FDC6320C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
On-state resistance: 9/10Ω
Gate-source voltage: ±8V
Power dissipation: 0.9W
Kind of channel: enhancement
Kind of transistor: complementary pair
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
On-state resistance: 9/10Ω
Gate-source voltage: ±8V
Power dissipation: 0.9W
Kind of channel: enhancement
Kind of transistor: complementary pair
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| FDC6326L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.125Ω
Number of channels: 1
Output current: 1.8A
Control voltage: 2.5...8V DC
Supply voltage: 3...20V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.125Ω
Number of channels: 1
Output current: 1.8A
Control voltage: 2.5...8V DC
Supply voltage: 3...20V DC
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| FDC654P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 0.115Ω
Gate-source voltage: ±20V
Power dissipation: 1.6W
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 0.115Ω
Gate-source voltage: ±20V
Power dissipation: 1.6W
Kind of channel: enhancement
Kind of package: reel; tape
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| FDC6329L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
On-state resistance: 0.105Ω
Number of channels: 1
Output current: 2.5A
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
On-state resistance: 0.105Ω
Number of channels: 1
Output current: 2.5A
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
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| NTGS4111PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: P-MOSFET
Case: TSOP6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -2.7A
On-state resistance: 60mΩ
Kind of channel: enhancement
Power dissipation: 1.25W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: P-MOSFET
Case: TSOP6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -2.7A
On-state resistance: 60mΩ
Kind of channel: enhancement
Power dissipation: 1.25W
Gate-source voltage: ±20V
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| FDD8880 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 1445 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.61 грн |
| 7+ | 63.30 грн |
| 10+ | 56.19 грн |
| 50+ | 36.05 грн |
| 100+ | 29.57 грн |
| 500+ | 27.81 грн |
| FDD8876 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2031 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.84 грн |
| 8+ | 55.15 грн |
| 25+ | 51.95 грн |
| 100+ | 50.35 грн |
| BCW65ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 170 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 65+ | 6.15 грн |
| 102+ | 3.94 грн |
| BCW65CLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 53+ | 7.59 грн |
| 65+ | 6.20 грн |
| 100+ | 4.49 грн |
| 500+ | 3.13 грн |
| 1000+ | 2.70 грн |
| MC74VHCT244ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD
Type of integrated circuit: digital
Family: VHCT
Technology: CMOS; TTL
Case: TSSOP20
Manufacturer series: VHCT
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD
Type of integrated circuit: digital
Family: VHCT
Technology: CMOS; TTL
Case: TSSOP20
Manufacturer series: VHCT
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Kind of output: 3-state
на замовлення 219 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.57 грн |
| 10+ | 56.83 грн |
| 25+ | 45.40 грн |
| 75+ | 35.97 грн |
| 74VHCT244AMTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: buffer; line driver; non-inverting
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: buffer; line driver; non-inverting
Kind of output: 3-state
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| MC74VHCT244ADTRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHCT
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: buffer; line driver; non-inverting
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHCT
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: buffer; line driver; non-inverting
Kind of output: 3-state
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| MC74VHCT244ADWRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD
Type of integrated circuit: digital
Family: VHCT
Technology: CMOS; TTL
Case: SO20WB
Manufacturer series: VHCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD
Type of integrated circuit: digital
Family: VHCT
Technology: CMOS; TTL
Case: SO20WB
Manufacturer series: VHCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Kind of output: 3-state
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| NCV8752AMX18TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Number of channels: 1
Output voltage: 1.8V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Number of channels: 1
Output voltage: 1.8V
Application: automotive industry
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| NCV8752AMX28TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Number of channels: 1
Output voltage: 2.8V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Number of channels: 1
Output voltage: 2.8V
Application: automotive industry
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| NCV8752ASN30T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Number of channels: 1
Output voltage: 3V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Number of channels: 1
Output voltage: 3V
Application: automotive industry
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| NCV8752BMX18TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV8752BMX28TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV8752BMX33TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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| NCV8752BSN28T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Number of channels: 1
Output voltage: 2.8V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Number of channels: 1
Output voltage: 2.8V
Application: automotive industry
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| NCV8752BSN30T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Number of channels: 1
Output voltage: 3V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Number of channels: 1
Output voltage: 3V
Application: automotive industry
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| FDS6682 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 31nC
On-state resistance: 11.5mΩ
Power dissipation: 2.5W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 50A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 31nC
On-state resistance: 11.5mΩ
Power dissipation: 2.5W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 50A
Polarisation: unipolar
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| MBRD650CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
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| MBRS190T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
на замовлення 1352 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 19+ | 22.06 грн |
| 20+ | 20.38 грн |
| 50+ | 16.86 грн |
| 100+ | 15.27 грн |
| 500+ | 11.75 грн |
| 1000+ | 11.67 грн |
| NLV14013BDTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape
Mounting: SMD
Operating temperature: -55...125°C
Type of integrated circuit: digital
Case: TSSOP14
Trigger: positive-edge-triggered
Number of channels: 2
Supply voltage: 3...18V DC
Kind of integrated circuit: D flip-flop
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape
Mounting: SMD
Operating temperature: -55...125°C
Type of integrated circuit: digital
Case: TSSOP14
Trigger: positive-edge-triggered
Number of channels: 2
Supply voltage: 3...18V DC
Kind of integrated circuit: D flip-flop
Kind of package: reel; tape
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| NLV14001BDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Family: HEF4000B
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Family: HEF4000B
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: reel; tape
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В кошику
од. на суму грн.
| NLV14021BDR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC16
Family: HEF4000B
Number of channels: 1
Number of inputs: 11
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; asynchronous; parallel in; serial output; static shift register
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC16
Family: HEF4000B
Number of channels: 1
Number of inputs: 11
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; asynchronous; parallel in; serial output; static shift register
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.






















