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SBRB1545CTG ONSEMI mbrb1545ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
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MMBTA92 MMBTA92 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D66C6EB7A70A50&compId=MMBTA92-DTE.PDF?ci_sign=07397f4496537557f17dd7185ae7e21f99b317c4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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MSQA6V1W5T2G ONSEMI msqa6v1w5t2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
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FQB8P10TM FQB8P10TM ONSEMI ONSM-S-A0006944028-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQD8P10TM-F085 FQD8P10TM-F085 ONSEMI fqd8p10tm_f085-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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2SD1628G-TD-E ONSEMI EN1781-D.html Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 280...560
Polarisation: bipolar
Frequency: 120MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
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2SD1620-TD-E ONSEMI en1719-d.html Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
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2SD1623S-TD-E ONSEMI en1727-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140...280
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
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2SD1623T-TD-E ONSEMI en1727-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 200...400
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
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FGD3245G2-F085C ONSEMI fgd3245g2-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Case: DPAK
Version: ESD
Type of transistor: IGBT
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 23nC
Gate-emitter voltage: ±10V
Collector current: 23A
Power dissipation: 150W
Collector-emitter voltage: 450V
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FDD2670 FDD2670 ONSEMI fdd2670-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.6A
Pulsed drain current: 20A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCS20166SN2T1G ONSEMI ncs20166-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; rail-to-rail
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
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NCV20166SN2T1G ONSEMI ncs20166-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
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STZD3155CT1G ONSEMI Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
4000+4.79 грн
Мінімальне замовлення: 4000
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MC14044BDR2G MC14044BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE730960D3&compId=MC14043B-D.pdf?ci_sign=888ddb241efe128fc89c8562974b5b38f1bd73c1 Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 3...18V DC
Number of channels: 4
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FSA5157P6X FSA5157P6X ONSEMI fsa5157-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷4.3VDC; reel,tape; CMOS
Type of integrated circuit: analog switch
Number of channels: 1
Case: SC70-6; SC88
Supply voltage: 1.65...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 500nA
Technology: CMOS
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FGY100T120SWD ONSEMI fgy100t120swd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
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MMBZ27VALT1G MMBZ27VALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 27V; 1A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. forward impulse current: 1A
Number of channels: 2
Version: ESD
Max. off-state voltage: 22V
Application: universal
Breakdown voltage: 27V
Peak pulse power dissipation: 40W
на замовлення 2063 шт:
термін постачання 21-30 дні (днів)
39+11.29 грн
52+7.91 грн
66+6.13 грн
147+2.76 грн
195+2.07 грн
230+1.76 грн
250+1.71 грн
Мінімальне замовлення: 39
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SBAS16XV2T1G SBAS16XV2T1G ONSEMI bas16xv2t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 3818 шт:
термін постачання 21-30 дні (днів)
125+3.48 грн
132+3.07 грн
148+2.74 грн
172+2.36 грн
221+1.83 грн
500+1.40 грн
1000+1.27 грн
3000+1.17 грн
Мінімальне замовлення: 125
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FSA3357K8X ONSEMI fsa3357-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; UMLP20; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: UMLP20
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
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ADP3211AMNR2G ONSEMI adp3211-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
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MBRB20200CTT4G MBRB20200CTT4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688C57FDF4E0745&compId=MBRB20200CTG.PDF?ci_sign=ec596306c7dabff1a435a9aace99b2d4183f9345 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. load current: 20A
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SBRB20200CTT4G ONSEMI mbrb20200ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: reel; tape
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MC74LCX16244DTG MC74LCX16244DTG ONSEMI mc74lcx16244-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 2...3.6V DC
Number of channels: 16
Manufacturer series: LCX
Kind of output: 3-state
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
5+80.68 грн
Мінімальне замовлення: 5
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FDT86244 ONSEMI fdt86244-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
Case: SOT223
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MMSZ5267BT1G MMSZ5267BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: MMSZ52xxB
на замовлення 124 шт:
термін постачання 21-30 дні (днів)
72+6.08 грн
97+4.20 грн
115+3.51 грн
124+3.23 грн
Мінімальне замовлення: 72
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FDP085N10A-F102 ONSEMI fdp085n10a-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; Idm: 384A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Pulsed drain current: 384A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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FDPF085N10A ONSEMI fdpf085n10a-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 200A; 33.3W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 33.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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CAV4016HV6-T2 ONSEMI Category: LED drivers
Description: IC: driver; LED driver; 4-wire; TQFN24-EP; 100mA; Ch: 16; 3÷5.5VDC
Application: automotive industry
Output current: 0.1A
Supply voltage: 3...5.5V DC
Operating temperature: -40...125°C
Case: TQFN24-EP
Mounting: SMD
Kind of package: reel; tape
Maximum output current: 150mA
Number of channels: 16
Frequency: 25MHz
Kind of integrated circuit: LED driver
Interface: 4-wire
Type of integrated circuit: driver
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MMBD352LT1G ONSEMI mmbd352lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
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MMBD353LT1G ONSEMI mmbd352lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
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MMBD354LT1G ONSEMI mmbd352lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
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MMBD355LT1G ONSEMI mmbd352lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common anode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
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1SV264-TL-E ONSEMI 1sv264-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.95V
Kind of package: reel; tape
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NSVP249SDSF3T1G ONSEMI nsvp249sdsf3-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Application: automotive industry
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NSVP264SDSF3T1G ONSEMI nsvp264sdsf3-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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NSVMMBD354LT1G ONSEMI mmbd352lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.3W
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NSVMMBD353LT1G ONSEMI mmbd352lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 10ns
Power dissipation: 0.3W
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MC33269ST-3.3T3G ONSEMI mc33269-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCV8406ASTT1G NCV8406ASTT1G ONSEMI ncv8406-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
на замовлення 578 шт:
термін постачання 21-30 дні (днів)
4+113.82 грн
10+62.12 грн
25+55.67 грн
50+53.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NCV8402ADDR2G NCV8402ADDR2G ONSEMI ncv8402d-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.4A; Ch: 2; P-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.4A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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NCV8450ASTT3G NCV8450ASTT3G ONSEMI ncv8450-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 3Ω
Kind of package: reel; tape
Supply voltage: 4.5...45V DC
Application: automotive industry
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NCV8461DR2G NCV8461DR2G ONSEMI ncv8461-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.7Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Application: automotive industry
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NCV8402ASTT3G NCV8402ASTT3G ONSEMI ncv8402-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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NCV8405ASTT1G NCV8405ASTT1G ONSEMI ncv8405-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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NCV8440ASTT1G ONSEMI ncv8440-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 0.18Ω
Kind of package: reel; tape
Gate-source voltage: ±15V
Drain-source voltage: 52V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.5nC
Power dissipation: 1.69W
Drain current: 2.6A
Pulsed drain current: 10A
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NCV8452STT1G NCV8452STT1G ONSEMI ncv8452-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5mA
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Application: automotive industry
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NCV8401BDTRKG ONSEMI ncv8401-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+65.16 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCV8406ASTT3G ONSEMI ncv8406-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223-4; 60V
Application: automotive industry
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Mounting: SMD
Active logical level: high
Case: SOT223-4
Kind of output: N-Channel
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
On-state resistance: 0.185Ω
Number of channels: 1
Output current: 7A
Power dissipation: 1.25W
Supply voltage: 60V
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
4000+50.39 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NCV8406BDTRKG ONSEMI ncv8406-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
2500+72.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCV8413DTRKG ONSEMI ncv8413-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 1; N-Channel; SMD; DPAK; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 37mΩ
Supply voltage: 42V
Application: automotive industry
Active logical level: low
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Power dissipation: 2.72W
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+100.78 грн
Мінімальне замовлення: 2500
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MC14012BDR2G MC14012BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3AD820&compId=MC14012B-D.pdf?ci_sign=602244c7331d95874ebb0f47fb6ff2858bd04f89 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
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74VHCT14AMTCX 74VHCT14AMTCX ONSEMI 74VHCT14A-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Case: TSSOP14
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Family: VHCT
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74VHCT14AMX 74VHCT14AMX ONSEMI ONSM-S-A0003584994-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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MC74VHCT14ADR2G MC74VHCT14ADR2G ONSEMI mc74vhct14a-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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MC74VHCT14ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2F20D3&compId=MC74VHCT14A-D.pdf?ci_sign=039af97986cc33f1cfa1cf4f44068bd5601cb670 Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter; Schmitt trigger
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Manufacturer series: VHCT
Kind of input: with Schmitt trigger
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MC74LCX125DG MC74LCX125DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62D96E735C0D3&compId=MC74LCX125-D.pdf?ci_sign=90ab9b6c03c98547a1bb0d2560cfe26517f80652 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 1.5...3.6V DC
Kind of package: tube
Number of inputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs
Family: LCX
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
27+16.51 грн
36+11.21 грн
44+9.28 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
MC74LCX540DTG MC74LCX540DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DB8797E00D3&compId=MC74LCX540-D.pdf?ci_sign=1ecfecae5d5f87ba9e045cfcc50ba378d35024c3 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,inverting; Ch: 8; CMOS; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 1.5...3.6V DC
Kind of package: tube
Integrated circuit features: 5V tolerant on inputs/outputs
Family: LCX
на замовлення 223 шт:
термін постачання 21-30 дні (днів)
5+98.18 грн
10+52.20 грн
25+42.36 грн
75+34.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
LM393M LM393M ONSEMI LM2903.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
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FQA40N25 FQA40N25 ONSEMI fqa40n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Type of transistor: N-MOSFET
Case: TO3PN
Gate charge: 110nC
On-state resistance: 70mΩ
Power dissipation: 280W
Gate-source voltage: ±30V
Drain current: 25A
Pulsed drain current: 160A
Drain-source voltage: 250V
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+270.20 грн
5+181.52 грн
Мінімальне замовлення: 2
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SBRB1545CTG mbrb1545ct-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
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MMBTA92 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D66C6EB7A70A50&compId=MMBTA92-DTE.PDF?ci_sign=07397f4496537557f17dd7185ae7e21f99b317c4
MMBTA92
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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MSQA6V1W5T2G msqa6v1w5t2-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
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FQB8P10TM ONSM-S-A0006944028-1.pdf?t.download=true&u=5oefqw
FQB8P10TM
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQD8P10TM-F085 fqd8p10tm_f085-d.pdf
FQD8P10TM-F085
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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2SD1628G-TD-E EN1781-D.html
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 280...560
Polarisation: bipolar
Frequency: 120MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
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2SD1620-TD-E en1719-d.html
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
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2SD1623S-TD-E en1727-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 140...280
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
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2SD1623T-TD-E en1727-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Kind of package: reel; tape
Current gain: 200...400
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Mounting: SMD
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
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FGD3245G2-F085C fgd3245g2-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Case: DPAK
Version: ESD
Type of transistor: IGBT
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 23nC
Gate-emitter voltage: ±10V
Collector current: 23A
Power dissipation: 150W
Collector-emitter voltage: 450V
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FDD2670 fdd2670-d.pdf
FDD2670
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.6A
Pulsed drain current: 20A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCS20166SN2T1G ncs20166-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; rail-to-rail
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
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NCV20166SN2T1G ncs20166-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SOT23-5; 3÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Mounting: SMT
Number of channels: single
Case: SOT23-5
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 0.55mV
Slew rate: 6V/μs
Bandwidth: 10MHz
Voltage supply range: 3...5.5V DC
Kind of package: reel; tape
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STZD3155CT1G
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+4.79 грн
Мінімальне замовлення: 4000
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MC14044BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE730960D3&compId=MC14043B-D.pdf?ci_sign=888ddb241efe128fc89c8562974b5b38f1bd73c1
MC14044BDR2G
Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Kind of package: reel; tape
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 3...18V DC
Number of channels: 4
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FSA5157P6X fsa5157-d.pdf
FSA5157P6X
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷4.3VDC; reel,tape; CMOS
Type of integrated circuit: analog switch
Number of channels: 1
Case: SC70-6; SC88
Supply voltage: 1.65...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 500nA
Technology: CMOS
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FGY100T120SWD fgy100t120swd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
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MMBZ27VALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ27VALT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 27V; 1A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. forward impulse current: 1A
Number of channels: 2
Version: ESD
Max. off-state voltage: 22V
Application: universal
Breakdown voltage: 27V
Peak pulse power dissipation: 40W
на замовлення 2063 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.29 грн
52+7.91 грн
66+6.13 грн
147+2.76 грн
195+2.07 грн
230+1.76 грн
250+1.71 грн
Мінімальне замовлення: 39
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SBAS16XV2T1G bas16xv2t1-d.pdf
SBAS16XV2T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 3818 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
125+3.48 грн
132+3.07 грн
148+2.74 грн
172+2.36 грн
221+1.83 грн
500+1.40 грн
1000+1.27 грн
3000+1.17 грн
Мінімальне замовлення: 125
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FSA3357K8X fsa3357-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; UMLP20; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: UMLP20
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
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ADP3211AMNR2G adp3211-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
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MBRB20200CTT4G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688C57FDF4E0745&compId=MBRB20200CTG.PDF?ci_sign=ec596306c7dabff1a435a9aace99b2d4183f9345
MBRB20200CTT4G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. load current: 20A
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SBRB20200CTT4G mbrb20200ct-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: reel; tape
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MC74LCX16244DTG mc74lcx16244-d.pdf
MC74LCX16244DTG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 2...3.6V DC
Number of channels: 16
Manufacturer series: LCX
Kind of output: 3-state
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+80.68 грн
Мінімальне замовлення: 5
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FDT86244 fdt86244-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
Case: SOT223
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MMSZ5267BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5267BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: MMSZ52xxB
на замовлення 124 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.08 грн
97+4.20 грн
115+3.51 грн
124+3.23 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
FDP085N10A-F102 fdp085n10a-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; Idm: 384A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Pulsed drain current: 384A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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FDPF085N10A fdpf085n10a-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 200A; 33.3W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 33.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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CAV4016HV6-T2
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; 4-wire; TQFN24-EP; 100mA; Ch: 16; 3÷5.5VDC
Application: automotive industry
Output current: 0.1A
Supply voltage: 3...5.5V DC
Operating temperature: -40...125°C
Case: TQFN24-EP
Mounting: SMD
Kind of package: reel; tape
Maximum output current: 150mA
Number of channels: 16
Frequency: 25MHz
Kind of integrated circuit: LED driver
Interface: 4-wire
Type of integrated circuit: driver
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MMBD352LT1G mmbd352lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: double series
Max. forward voltage: 0.6V
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
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MMBD353LT1G mmbd352lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
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MMBD354LT1G mmbd352lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
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MMBD355LT1G mmbd352lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 600mV; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common anode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
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1SV264-TL-E 1sv264-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.95V
Kind of package: reel; tape
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NSVP249SDSF3T1G nsvp249sdsf3-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Application: automotive industry
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NSVP264SDSF3T1G nsvp264sdsf3-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 50mA; SC70; Ufmax: 950mV; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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NSVMMBD354LT1G mmbd352lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.3W
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NSVMMBD353LT1G mmbd352lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape
Type of diode: switching
Max. off-state voltage: 7V
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 10ns
Power dissipation: 0.3W
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MC33269ST-3.3T3G mc33269-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCV8406ASTT1G ncv8406-d.pdf
NCV8406ASTT1G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
на замовлення 578 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+113.82 грн
10+62.12 грн
25+55.67 грн
50+53.25 грн
Мінімальне замовлення: 4
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NCV8402ADDR2G ncv8402d-d.pdf
NCV8402ADDR2G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.4A; Ch: 2; P-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.4A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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NCV8450ASTT3G ncv8450-d.pdf
NCV8450ASTT3G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 3Ω
Kind of package: reel; tape
Supply voltage: 4.5...45V DC
Application: automotive industry
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NCV8461DR2G ncv8461-d.pdf
NCV8461DR2G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.7Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Application: automotive industry
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NCV8402ASTT3G ncv8402-d.pdf
NCV8402ASTT3G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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NCV8405ASTT1G ncv8405-d.pdf
NCV8405ASTT1G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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NCV8440ASTT1G ncv8440-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 0.18Ω
Kind of package: reel; tape
Gate-source voltage: ±15V
Drain-source voltage: 52V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.5nC
Power dissipation: 1.69W
Drain current: 2.6A
Pulsed drain current: 10A
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NCV8452STT1G ncv8452-d.pdf
NCV8452STT1G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5mA
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Application: automotive industry
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NCV8401BDTRKG ncv8401-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+65.16 грн
Мінімальне замовлення: 2500
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NCV8406ASTT3G ncv8406-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223-4; 60V
Application: automotive industry
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Mounting: SMD
Active logical level: high
Case: SOT223-4
Kind of output: N-Channel
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
On-state resistance: 0.185Ω
Number of channels: 1
Output current: 7A
Power dissipation: 1.25W
Supply voltage: 60V
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+50.39 грн
Мінімальне замовлення: 4000
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NCV8406BDTRKG ncv8406-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+72.11 грн
Мінімальне замовлення: 2500
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NCV8413DTRKG ncv8413-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 1; N-Channel; SMD; DPAK; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 37mΩ
Supply voltage: 42V
Application: automotive industry
Active logical level: low
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Power dissipation: 2.72W
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+100.78 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MC14012BDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3AD820&compId=MC14012B-D.pdf?ci_sign=602244c7331d95874ebb0f47fb6ff2858bd04f89
MC14012BDR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
товару немає в наявності
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74VHCT14AMTCX 74VHCT14A-D.PDF
74VHCT14AMTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Case: TSSOP14
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Family: VHCT
товару немає в наявності
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74VHCT14AMX ONSM-S-A0003584994-1.pdf?t.download=true&u=5oefqw
74VHCT14AMX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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MC74VHCT14ADR2G mc74vhct14a-d.pdf
MC74VHCT14ADR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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MC74VHCT14ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2F20D3&compId=MC74VHCT14A-D.pdf?ci_sign=039af97986cc33f1cfa1cf4f44068bd5601cb670
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter; Schmitt trigger
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Manufacturer series: VHCT
Kind of input: with Schmitt trigger
товару немає в наявності
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MC74LCX125DG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62D96E735C0D3&compId=MC74LCX125-D.pdf?ci_sign=90ab9b6c03c98547a1bb0d2560cfe26517f80652
MC74LCX125DG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 1.5...3.6V DC
Kind of package: tube
Number of inputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs
Family: LCX
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.51 грн
36+11.21 грн
44+9.28 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
MC74LCX540DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DB8797E00D3&compId=MC74LCX540-D.pdf?ci_sign=1ecfecae5d5f87ba9e045cfcc50ba378d35024c3
MC74LCX540DTG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,inverting; Ch: 8; CMOS; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 1.5...3.6V DC
Kind of package: tube
Integrated circuit features: 5V tolerant on inputs/outputs
Family: LCX
на замовлення 223 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+98.18 грн
10+52.20 грн
25+42.36 грн
75+34.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
LM393M LM2903.pdf
LM393M
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
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FQA40N25 fqa40n25-d.pdf
FQA40N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Type of transistor: N-MOSFET
Case: TO3PN
Gate charge: 110nC
On-state resistance: 70mΩ
Power dissipation: 280W
Gate-source voltage: ±30V
Drain current: 25A
Pulsed drain current: 160A
Drain-source voltage: 250V
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+270.20 грн
5+181.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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