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MC74ACT05DG MC74ACT05DG ONSEMI mc74ac05-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: ACT
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MC74ACT05DR2G ONSEMI MC74AC05-D.pdf Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; TTL; SMD; SOIC14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: SOIC14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: ACT
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MC74ACT05DTR2G ONSEMI MC74AC05-D.pdf Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; TTL; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: ACT
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74VHC14MTCX 74VHC14MTCX ONSEMI 74VHC14.pdf description Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
Number of inputs: 1
на замовлення 2647 шт:
термін постачання 14-30 дні (днів)
20+23.28 грн
23+18.46 грн
26+16.21 грн
29+14.47 грн
100+13.63 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MC74VHC14DR2G MC74VHC14DR2G ONSEMI mc74vhc14-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Kind of input: with Schmitt trigger
Family: VHC
Kind of package: reel; tape
Technology: CMOS
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...5.5V DC
на замовлення 1820 шт:
термін постачання 14-30 дні (днів)
25+17.91 грн
28+14.97 грн
250+12.30 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
MC74VHC14DTR2G MC74VHC14DTR2G ONSEMI mc74vhc14-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of input: with Schmitt trigger
Family: VHC
Kind of package: reel; tape
Technology: CMOS
Number of inputs: 1
Supply voltage: 2...5.5V DC
на замовлення 828 шт:
термін постачання 14-30 дні (днів)
17+27.76 грн
24+18.04 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MC74VHC14DG MC74VHC14DG ONSEMI mc74vhc14-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Kind of input: with Schmitt trigger
Family: VHC
Kind of package: tube
Technology: CMOS
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...5.5V DC
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+447.67 грн
В кошику  од. на суму  грн.
NUP4114UCLW1T2G NUP4114UCLW1T2G ONSEMI NUP4114.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
на замовлення 1278 шт:
термін постачання 14-30 дні (днів)
18+25.07 грн
22+19.29 грн
25+17.13 грн
50+12.72 грн
100+11.14 грн
500+8.23 грн
1000+7.82 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
MMSZ5231BT1G MMSZ5231BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 1472 шт:
термін постачання 14-30 дні (днів)
39+11.64 грн
66+6.32 грн
79+5.28 грн
102+4.11 грн
120+3.47 грн
200+2.99 грн
250+2.86 грн
500+2.53 грн
1000+2.25 грн
Мінімальне замовлення: 39
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SZMMSZ5231BT1G SZMMSZ5231BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
на замовлення 2650 шт:
термін постачання 14-30 дні (днів)
36+12.53 грн
46+9.15 грн
57+7.40 грн
79+5.32 грн
100+4.49 грн
Мінімальне замовлення: 36
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MC14017BDR2G MC14017BDR2G ONSEMI MC14017B-D.pdf Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: decade counter
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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NCP1252ADR2G NCP1252ADR2G ONSEMI ncp1252-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback,forward
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 92...550kHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -25...125°C
Operating voltage: 9...28V DC
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MBR1060G MBR1060G ONSEMI MBR1060G.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
8+54.87 грн
Мінімальне замовлення: 8
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FDB0630N1507L ONSEMI fdb0630n1507l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 720A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 720A
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FDBL0630N150 ONSEMI fdbl0630n150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 169A
Power dissipation: 500W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDD2572 FDD2572 ONSEMI FDD2572.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.4nC
On-state resistance: 146mΩ
Drain current: 4A
Gate-source voltage: ±20V
Power dissipation: 135W
Drain-source voltage: 150V
на замовлення 2172 шт:
термін постачання 14-30 дні (днів)
4+139.67 грн
10+112.24 грн
25+98.94 грн
100+86.47 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDP2532 FDP2532 ONSEMI FDX2532-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 56A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
2+283.83 грн
10+187.06 грн
50+169.60 грн
Мінімальне замовлення: 2
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1N5348BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 11V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 11V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5348BG 1N5348BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 11V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 11V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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2SC5226A-4-TL-E 2SC5226A-4-TL-E ONSEMI 2sc5226a-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
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RFP70N06 RFP70N06 ONSEMI RFP70N06.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 435 шт:
термін постачання 14-30 дні (днів)
4+115.50 грн
50+99.77 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDP047N10 ONSEMI fdp047n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
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FDP047N08 ONSEMI fdp047n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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FDS6910 FDS6910 ONSEMI fds6910-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Mounting: SMD
On-state resistance: 20mΩ
Power dissipation: 1.6W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
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NTMC083NP10M5L ONSEMI ntmc083np10m5l-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 4.5/-3.6A
Power dissipation: 1.2W
Case: SOIC8
Gate-source voltage: ±20V
On-state resistance: 83/131mΩ
Mounting: SMD
Gate charge: 5/5.2nC
Kind of channel: enhancement
Pulsed drain current: 20A
Kind of package: reel; tape
Kind of transistor: complementary pair
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NTTBC070NP10M5L ONSEMI nttbc070np10m5l-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 9.5/-5A
Power dissipation: 14/10W
Gate-source voltage: ±20V
On-state resistance: 70/186mΩ
Mounting: SMD
Gate charge: 5.6/7.3nC
Kind of channel: enhancement
Pulsed drain current: 33A
Kind of package: reel; tape
Kind of transistor: complementary pair
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74AC139SC ONSEMI ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw FAIRS01311-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; AC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
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FDS8447 FDS8447 ONSEMI FDS8447.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 15mΩ
Power dissipation: 2.5W
Drain current: 12.8A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of package: reel; tape
на замовлення 1585 шт:
термін постачання 14-30 дні (днів)
6+88.64 грн
7+68.17 грн
10+60.69 грн
25+59.86 грн
Мінімальне замовлення: 6
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FDP8447L FDP8447L ONSEMI fdp8447l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 13.7mΩ
Power dissipation: 60W
Drain current: 50A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of package: tube
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NTS4001NT1G NTS4001NT1G ONSEMI nts4001n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.2A
Power dissipation: 0.33W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 641 шт:
термін постачання 14-30 дні (днів)
39+11.64 грн
55+7.57 грн
73+5.72 грн
100+5.03 грн
500+3.79 грн
Мінімальне замовлення: 39
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MMBT6427 ONSEMI MMBT6427.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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1N5367BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 43V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 43V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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1N5367BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 43V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 43V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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MC74HC30ADG MC74HC30ADG ONSEMI MC74HC30A-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
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MC74HC30ADR2G ONSEMI MC74HC30A-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SOIC14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
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MC74HC30ADTR2G MC74HC30ADTR2G ONSEMI MC74HC30A-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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MJH6287G MJH6287G ONSEMI MJH6284G.PDF Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 100V
Frequency: 4MHz
Kind of transistor: Darlington
Collector current: 20A
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
2+313.44 грн
3+300.97 грн
10+245.26 грн
20+239.44 грн
Мінімальне замовлення: 2
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MC74HC174ADR2G MC74HC174ADR2G ONSEMI MC74HC174A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Manufacturer series: HC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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MC74HC174ADTR2G MC74HC174ADTR2G ONSEMI MC74HC174A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Manufacturer series: HC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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NB3L553DG NB3L553DG ONSEMI nb3l553-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 6VDC; SMD; SO8; -40÷85°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Supply voltage: 6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 4
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NB3L553MNR4G NB3L553MNR4G ONSEMI 0900766b8125d51f.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8; OUT: 4
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Supply voltage: 2.375...5.25V DC
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 4
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MC100EP16DG ONSEMI mc10ep16-d.pdf Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: SOIC8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
Supply voltage: 3...5.5V
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MC100EP16DTG ONSEMI mc10ep16-d.pdf Category: Other logic integrated circuits
Description: IC: digital; line driver,transceiver; Ch: 1; ECL; SMD; TSSOP8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: line driver; transceiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: TSSOP8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
Supply voltage: 3...5.5V
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MC100EP16DTR2G ONSEMI mc10ep16-d.pdf Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; TSSOP8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: TSSOP8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
Supply voltage: 3...5.5V
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MC100EP16MNR4G MC100EP16MNR4G ONSEMI mc10ep16-d.pdf Category: Other logic integrated circuits
Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; driver; receiver
Number of channels: 1
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
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MC100EP16VADG ONSEMI mc100ep16va-d.pdf Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: SOIC8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
Supply voltage: 3...5.5V
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MC100EP16VADTR2G ONSEMI Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; TSSOP8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: TSSOP8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
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BZX85C13 BZX85C13 ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
на замовлення 3461 шт:
термін постачання 14-30 дні (днів)
46+9.85 грн
56+7.48 грн
65+6.48 грн
108+3.87 грн
500+2.89 грн
1000+2.63 грн
2000+2.43 грн
3000+2.36 грн
Мінімальне замовлення: 46
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BZX85C16 BZX85C16 ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
на замовлення 1720 шт:
термін постачання 14-30 дні (днів)
50+8.95 грн
66+6.32 грн
80+5.24 грн
153+2.73 грн
Мінімальне замовлення: 50
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SZ1SMB5920BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
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FDD86110 ONSEMI fdd86110-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 127W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 127W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ISL9V3040D3ST ONSEMI ISL9V3040P3-D.PDF Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 17nC
Power dissipation: 150W
Collector current: 17A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
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ISL9V5045S3ST-F085C ONSEMI isl9v5045s3st-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
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ISL9V3040D3ST-F085C ONSEMI isl9v3040-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 17nC
Power dissipation: 150W
Collector current: 17A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
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ISL9V5045S3ST-F085 ONSEMI isl9v5045s-f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
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ISL9V2040D3ST ONSEMI ISL9V2040D-F085-D.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 12nC
Power dissipation: 130W
Collector current: 10A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
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FDG6324L FDG6324L ONSEMI FDG6324L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.6A; Ch: 1; P-Channel; SMD; SC70-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.6A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC70-6
On-state resistance: 0.75Ω
Kind of package: reel; tape
Supply voltage: 3...20V DC
Control voltage: 2.5...8V DC
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NTJD1155LT1G NTJD1155LT1G ONSEMI NTJD1155L.PDF Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
на замовлення 614 шт:
термін постачання 14-30 дні (днів)
15+30.44 грн
21+20.54 грн
50+14.97 грн
100+14.47 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BZX84C9V1LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
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SZBZX84C9V1ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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MC74ACT05DG mc74ac05-d.pdf
MC74ACT05DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: ACT
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MC74ACT05DR2G MC74AC05-D.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; TTL; SMD; SOIC14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: SOIC14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: ACT
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MC74ACT05DTR2G MC74AC05-D.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; TTL; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: ACT
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74VHC14MTCX description 74VHC14.pdf
74VHC14MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
Number of inputs: 1
на замовлення 2647 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.28 грн
23+18.46 грн
26+16.21 грн
29+14.47 грн
100+13.63 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MC74VHC14DR2G mc74vhc14-d.pdf
MC74VHC14DR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Kind of input: with Schmitt trigger
Family: VHC
Kind of package: reel; tape
Technology: CMOS
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...5.5V DC
на замовлення 1820 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.91 грн
28+14.97 грн
250+12.30 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
MC74VHC14DTR2G mc74vhc14-d.pdf
MC74VHC14DTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of input: with Schmitt trigger
Family: VHC
Kind of package: reel; tape
Technology: CMOS
Number of inputs: 1
Supply voltage: 2...5.5V DC
на замовлення 828 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+27.76 грн
24+18.04 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MC74VHC14DG mc74vhc14-d.pdf
MC74VHC14DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Kind of input: with Schmitt trigger
Family: VHC
Kind of package: tube
Technology: CMOS
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...5.5V DC
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+447.67 грн
В кошику  од. на суму  грн.
NUP4114UCLW1T2G NUP4114.PDF
NUP4114UCLW1T2G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
на замовлення 1278 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.07 грн
22+19.29 грн
25+17.13 грн
50+12.72 грн
100+11.14 грн
500+8.23 грн
1000+7.82 грн
Мінімальне замовлення: 18
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MMSZ5231BT1G MMSZ52xxT1G.PDF
MMSZ5231BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 1472 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.64 грн
66+6.32 грн
79+5.28 грн
102+4.11 грн
120+3.47 грн
200+2.99 грн
250+2.86 грн
500+2.53 грн
1000+2.25 грн
Мінімальне замовлення: 39
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SZMMSZ5231BT1G MMSZ52xxT1G.PDF
SZMMSZ5231BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
на замовлення 2650 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.53 грн
46+9.15 грн
57+7.40 грн
79+5.32 грн
100+4.49 грн
Мінімальне замовлення: 36
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MC14017BDR2G MC14017B-D.pdf
MC14017BDR2G
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: decade counter
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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NCP1252ADR2G ncp1252-d.pdf
NCP1252ADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback,forward
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 92...550kHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -25...125°C
Operating voltage: 9...28V DC
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MBR1060G MBR1060G.PDF
MBR1060G
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+54.87 грн
Мінімальне замовлення: 8
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FDB0630N1507L fdb0630n1507l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 720A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 720A
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FDBL0630N150 fdbl0630n150-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 169A
Power dissipation: 500W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDD2572 FDD2572.pdf
FDD2572
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.4nC
On-state resistance: 146mΩ
Drain current: 4A
Gate-source voltage: ±20V
Power dissipation: 135W
Drain-source voltage: 150V
на замовлення 2172 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+139.67 грн
10+112.24 грн
25+98.94 грн
100+86.47 грн
Мінімальне замовлення: 4
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FDP2532 FDX2532-DTE.pdf
FDP2532
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 56A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+283.83 грн
10+187.06 грн
50+169.60 грн
Мінімальне замовлення: 2
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1N5348BRLG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 11V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 11V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5348BG 1N53xx.PDF
1N5348BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 11V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 11V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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2SC5226A-4-TL-E 2sc5226a-d.pdf
2SC5226A-4-TL-E
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
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RFP70N06 RFP70N06.pdf
RFP70N06
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 435 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+115.50 грн
50+99.77 грн
Мінімальне замовлення: 4
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FDP047N10 fdp047n10-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
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FDP047N08 fdp047n08-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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FDS6910 fds6910-d.pdf
FDS6910
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Mounting: SMD
On-state resistance: 20mΩ
Power dissipation: 1.6W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
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NTMC083NP10M5L ntmc083np10m5l-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 4.5/-3.6A
Power dissipation: 1.2W
Case: SOIC8
Gate-source voltage: ±20V
On-state resistance: 83/131mΩ
Mounting: SMD
Gate charge: 5/5.2nC
Kind of channel: enhancement
Pulsed drain current: 20A
Kind of package: reel; tape
Kind of transistor: complementary pair
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NTTBC070NP10M5L nttbc070np10m5l-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 9.5/-5A
Power dissipation: 14/10W
Gate-source voltage: ±20V
On-state resistance: 70/186mΩ
Mounting: SMD
Gate charge: 5.6/7.3nC
Kind of channel: enhancement
Pulsed drain current: 33A
Kind of package: reel; tape
Kind of transistor: complementary pair
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74AC139SC ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw FAIRS01311-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; AC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
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FDS8447 description FDS8447.pdf
FDS8447
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 15mΩ
Power dissipation: 2.5W
Drain current: 12.8A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of package: reel; tape
на замовлення 1585 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+88.64 грн
7+68.17 грн
10+60.69 грн
25+59.86 грн
Мінімальне замовлення: 6
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FDP8447L fdp8447l-d.pdf
FDP8447L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 13.7mΩ
Power dissipation: 60W
Drain current: 50A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of package: tube
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NTS4001NT1G nts4001n-d.pdf
NTS4001NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.2A
Power dissipation: 0.33W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 641 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.64 грн
55+7.57 грн
73+5.72 грн
100+5.03 грн
500+3.79 грн
Мінімальне замовлення: 39
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MMBT6427 MMBT6427.pdf
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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1N5367BG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 43V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 43V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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1N5367BRLG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 43V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 43V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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MC74HC30ADG MC74HC30A-D.pdf
MC74HC30ADG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
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MC74HC30ADR2G MC74HC30A-D.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SOIC14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
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MC74HC30ADTR2G MC74HC30A-D.pdf
MC74HC30ADTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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MJH6287G MJH6284G.PDF
MJH6287G
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 100V
Frequency: 4MHz
Kind of transistor: Darlington
Collector current: 20A
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+313.44 грн
3+300.97 грн
10+245.26 грн
20+239.44 грн
Мінімальне замовлення: 2
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MC74HC174ADR2G MC74HC174A-D.pdf
MC74HC174ADR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Manufacturer series: HC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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MC74HC174ADTR2G MC74HC174A-D.pdf
MC74HC174ADTR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; HC; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Manufacturer series: HC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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NB3L553DG nb3l553-d.pdf
NB3L553DG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 6VDC; SMD; SO8; -40÷85°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Supply voltage: 6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 4
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NB3L553MNR4G 0900766b8125d51f.pdf
NB3L553MNR4G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8; OUT: 4
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Supply voltage: 2.375...5.25V DC
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 4
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MC100EP16DG mc10ep16-d.pdf
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: SOIC8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
Supply voltage: 3...5.5V
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MC100EP16DTG mc10ep16-d.pdf
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; line driver,transceiver; Ch: 1; ECL; SMD; TSSOP8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: line driver; transceiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: TSSOP8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
Supply voltage: 3...5.5V
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MC100EP16DTR2G mc10ep16-d.pdf
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; TSSOP8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: TSSOP8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
Supply voltage: 3...5.5V
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MC100EP16MNR4G mc10ep16-d.pdf
MC100EP16MNR4G
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; driver; receiver
Number of channels: 1
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
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MC100EP16VADG mc100ep16va-d.pdf
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: SOIC8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
Supply voltage: 3...5.5V
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MC100EP16VADTR2G
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; TSSOP8; 100EP
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: TSSOP8
Manufacturer series: 100EP
Operating temperature: -40...85°C
Integrated circuit features: differential
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BZX85C13 BZX85C.PDF
BZX85C13
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
на замовлення 3461 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+9.85 грн
56+7.48 грн
65+6.48 грн
108+3.87 грн
500+2.89 грн
1000+2.63 грн
2000+2.43 грн
3000+2.36 грн
Мінімальне замовлення: 46
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BZX85C16 BZX85C.PDF
BZX85C16
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
на замовлення 1720 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+8.95 грн
66+6.32 грн
80+5.24 грн
153+2.73 грн
Мінімальне замовлення: 50
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SZ1SMB5920BT3G 1SMB59xxBT3G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
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FDD86110 fdd86110-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 127W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 127W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ISL9V3040D3ST ISL9V3040P3-D.PDF
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 17nC
Power dissipation: 150W
Collector current: 17A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
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ISL9V5045S3ST-F085C isl9v5045s3st-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
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ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 17nC
Power dissipation: 150W
Collector current: 17A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
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ISL9V5045S3ST-F085 isl9v5045s-f085-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
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ISL9V2040D3ST ISL9V2040D-F085-D.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 12nC
Power dissipation: 130W
Collector current: 10A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
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FDG6324L FDG6324L.pdf
FDG6324L
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.6A; Ch: 1; P-Channel; SMD; SC70-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.6A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC70-6
On-state resistance: 0.75Ω
Kind of package: reel; tape
Supply voltage: 3...20V DC
Control voltage: 2.5...8V DC
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NTJD1155LT1G NTJD1155L.PDF
NTJD1155LT1G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
на замовлення 614 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
15+30.44 грн
21+20.54 грн
50+14.97 грн
100+14.47 грн
Мінімальне замовлення: 15
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BZX84C9V1LT3G bzx84c2v4lt1-d.pdf
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
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SZBZX84C9V1ET1G BZX84CxxET1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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