| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| NIS1161MTTAG | ONSEMI |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 23V; WDFN6; reel,tape Case: WDFN6 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Max. off-state voltage: 16V Breakdown voltage: 23V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCP5106BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Supply voltage: 10...20V DC Output current: -500...250mA Type of integrated circuit: driver Protection: undervoltage UVP Operating temperature: -40...125°C Integrated circuit features: integrated bootstrap functionality Pulse fall time: 75ns Voltage class: 600V Kind of package: reel; tape Case: SO8 Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Impulse rise time: 160ns Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FGHL40T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 118nC Kind of package: tube |
на замовлення 355 шт: термін постачання 14-30 дні (днів) |
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M74HCT4852ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Case: TSSOP16 Supply voltage: 4...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: HCT Family: HCT Number of inputs: 5 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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MC74HCT4851ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 11 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Manufacturer series: HCT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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MC74HCT4852ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Case: SOIC16 Supply voltage: 4.5...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: HCT Family: HCT Number of inputs: 8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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MC74ACT02DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT Type of integrated circuit: digital Kind of gate: NOR Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SOIC14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Manufacturer series: ACT Technology: TTL |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| BC848CLT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SC59 Mounting: SMD Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTC143ZET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80...200 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5400RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO201AD Kind of package: reel; tape |
на замовлення 978 шт: термін постачання 14-30 дні (днів) |
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| 1N5400G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; bulk Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO201AD Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SD1624T-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD1624S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTS4173PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -800mA Power dissipation: 0.29W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -5A |
на замовлення 2311 шт: термін постачання 14-30 дні (днів) |
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| BB-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510 Type of development kit: evaluation Kit contents: prototype board Components: FT232BL; NCS36510 Interface: GPIO; I2C; SPI; UART Connection: pin strips; Pmod socket x2; power supply; USB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMC012N03 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDB035AN06A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK Mounting: SMD Power dissipation: 310W Gate charge: 124nC Polarisation: unipolar Technology: PowerTrench® Drain current: 80A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 7.1mΩ |
на замовлення 161 шт: термін постачання 14-30 дні (днів) |
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MC78LC33NTRG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: TSOT23-5 Operating temperature: -40...85°C Kind of package: reel; tape Voltage drop: 53mV Output voltage: 3.3V Number of channels: 1 Tolerance: ±2.5% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: MC78LC00 Input voltage: 4.3...12V Output current: 80mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC78LC50NTRG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 38mV Output voltage: 5V Output current: 0.1A Case: TSOP5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...12V |
на замовлення 2880 шт: термін постачання 14-30 дні (днів) |
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| FAN53601UC182X | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: WLCSP6 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FAN53611AUC18X | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: WLCSP6 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FGY40T120SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 441W Case: TO247H03 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||
| FGHL40T120RWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 174nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FGY140T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 576W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 560A Mounting: THT Gate charge: 415.4nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FGH4L40T120LQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 153W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 227nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AFGHL40T120RWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 170nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NSPM5131MUTBG | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 16.5V; uDFN6; reel,tape Case: uDFN6 Mounting: SMD Breakdown voltage: 16.5V Max. off-state voltage: 13.5V Kind of package: reel; tape Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2N6284G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 20A Power dissipation: 160W Case: TO3 Current gain: 100...18000 Mounting: THT Kind of package: in-tray |
на замовлення 112 шт: термін постачання 14-30 дні (днів) |
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2N6292G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 7A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz |
на замовлення 960 шт: термін постачання 14-30 дні (днів) |
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NDT2955 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.5A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3079 шт: термін постачання 14-30 дні (днів) |
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NTF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 2.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 418 шт: термін постачання 14-30 дні (днів) |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Mounting: SMD Power dissipation: 2.3W Gate charge: 14.3nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 154mΩ |
на замовлення 635 шт: термін постачання 14-30 дні (днів) |
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MJD2955G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: tube Frequency: 2MHz |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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MJE2955TG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 125W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 2MHz Current gain: 20...100 |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
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SVD2955T4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Mounting: SMD Pulsed drain current: -18A Power dissipation: 55W Gate charge: 15nC Polarisation: unipolar Drain current: -12A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 0.18Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJD2955T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJF2955G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP Mounting: THT Collector-emitter voltage: 90V Power dissipation: 30W Polarisation: bipolar Type of transistor: PNP Current gain: 20...100 Kind of package: tube Case: TO220FP Frequency: 2MHz Collector current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV8535MN500R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1 Kind of voltage regulator: fixed; LDO; linear Output current: 0.5A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 5V Kind of package: reel; tape Case: DFN10 Number of channels: 1 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV8535MN330R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.5A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 3.3V Kind of package: reel; tape Case: DFN10 Number of channels: 1 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MM74HCT14M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Technology: CMOS Mounting: SMD Case: SO14 Kind of package: tube Kind of input: with Schmitt trigger Family: HCT Quiescent current: 10µA Number of inputs: 1 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C |
на замовлення 84 шт: термін постачання 14-30 дні (днів) |
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MC74HCT14ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Technology: CMOS Mounting: SMD Case: SO14 Kind of package: tube Kind of input: with Schmitt trigger Family: HCT Number of inputs: 1 Delay time: 32ns Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C |
на замовлення 51 шт: термін постачання 14-30 дні (днів) |
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MM74HCT14MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Technology: CMOS Mounting: SMD Case: SO14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HCT Number of inputs: 1 Delay time: 13ns Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HCT14ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Technology: CMOS Mounting: SMD Case: SO14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HCT Number of inputs: 1 Delay time: 32ns Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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MC74HCT14ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Technology: CMOS Mounting: SMD Case: TSSOP14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HCT Number of inputs: 1 Delay time: 32ns Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MM74HCT14MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Technology: CMOS Mounting: SMD Case: TSSOP14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HCT Number of inputs: 1 Delay time: 13ns Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| MC33164D-5R2G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 5V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC33164D-3R2G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 3V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC33164DM-3R2G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 3V Case: TSSOP8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
| MC33164DM-5R2G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 5V Case: TSSOP8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
| MC34164D-5G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Supply voltage: 10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: 0...70°C Threshold on-voltage: 5V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC34164D-5R2G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Supply voltage: 10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: 0...70°C Threshold on-voltage: 5V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
NCV4949CDR2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
NCV4949CPDR2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
CAT24C16WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Mounting: SMD Case: SOIC8 Kind of interface: serial Access time: 900ns Operating temperature: -40...85°C Clock frequency: 400kHz Kind of package: reel; tape |
на замовлення 308 шт: термін постачання 14-30 дні (днів) |
|
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| N24C16UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.6...5.5V Mounting: SMD Case: US8 Kind of interface: serial Access time: 450ns Operating temperature: -40...85°C Clock frequency: 1MHz Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| N24C16UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 2kx8bit Mounting: SMD Case: US8 Kind of interface: serial Access time: 450ns Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| NV24C16DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Mounting: SMD Case: TSSOP8 Kind of interface: serial Access time: 450ns Operating temperature: -40...125°C Clock frequency: 1MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NV24C16DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Mounting: SMD Case: SOIC8 Kind of interface: serial Access time: 450ns Operating temperature: -40...125°C Clock frequency: 1MHz Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| NV24C16MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Mounting: SMD Case: uDFN8 Kind of interface: serial Access time: 450ns Operating temperature: -40...125°C Clock frequency: 1MHz Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| NV24C16SNVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Mounting: SMD Case: TSOP5 Kind of interface: serial Access time: 450ns Operating temperature: -40...125°C Clock frequency: 1MHz Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| NIS1161MTTAG |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
товару немає в наявності
В кошику
од. на суму грн.
| NCP5106BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Supply voltage: 10...20V DC
Output current: -500...250mA
Type of integrated circuit: driver
Protection: undervoltage UVP
Operating temperature: -40...125°C
Integrated circuit features: integrated bootstrap functionality
Pulse fall time: 75ns
Voltage class: 600V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Impulse rise time: 160ns
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Supply voltage: 10...20V DC
Output current: -500...250mA
Type of integrated circuit: driver
Protection: undervoltage UVP
Operating temperature: -40...125°C
Integrated circuit features: integrated bootstrap functionality
Pulse fall time: 75ns
Voltage class: 600V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Impulse rise time: 160ns
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FGHL40T120SWD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
на замовлення 355 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 416.93 грн |
| 3+ | 347.25 грн |
| 5+ | 223.29 грн |
| 12+ | 210.56 грн |
| 60+ | 202.92 грн |
| M74HCT4852ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Case: TSSOP16
Supply voltage: 4...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: HCT
Family: HCT
Number of inputs: 5
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Case: TSSOP16
Supply voltage: 4...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: HCT
Family: HCT
Number of inputs: 5
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HCT4851ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HCT4852ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: HCT
Family: HCT
Number of inputs: 8
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: HCT
Family: HCT
Number of inputs: 8
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74ACT02DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Technology: TTL
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Technology: TTL
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BC848CLT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| DTC143ZET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
товару немає в наявності
В кошику
од. на суму грн.
| 1N5400RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: reel; tape
на замовлення 978 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.54 грн |
| 102+ | 9.51 грн |
| 278+ | 9.00 грн |
| 1N5400G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: bulk
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1624T-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1624S-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
товару немає в наявності
В кошику
од. на суму грн.
| NTS4173PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -800mA
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -5A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -800mA
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -5A
на замовлення 2311 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 20.12 грн |
| 33+ | 12.99 грн |
| 39+ | 10.95 грн |
| 50+ | 9.68 грн |
| 100+ | 8.83 грн |
| 177+ | 5.43 грн |
| 486+ | 5.18 грн |
| BB-GEVK |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Type of development kit: evaluation
Kit contents: prototype board
Components: FT232BL; NCS36510
Interface: GPIO; I2C; SPI; UART
Connection: pin strips; Pmod socket x2; power supply; USB
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Type of development kit: evaluation
Kit contents: prototype board
Components: FT232BL; NCS36510
Interface: GPIO; I2C; SPI; UART
Connection: pin strips; Pmod socket x2; power supply; USB
товару немає в наявності
В кошику
од. на суму грн.
| FDMC012N03 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDB035AN06A0 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Power dissipation: 310W
Gate charge: 124nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 7.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Power dissipation: 310W
Gate charge: 124nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 7.1mΩ
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 355.67 грн |
| 10+ | 275.08 грн |
| MC78LC33NTRG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: TSOT23-5
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage drop: 53mV
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2.5%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC78LC00
Input voltage: 4.3...12V
Output current: 80mA
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: TSOT23-5
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage drop: 53mV
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2.5%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC78LC00
Input voltage: 4.3...12V
Output current: 80mA
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| MC78LC50NTRG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 38mV
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 38mV
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
на замовлення 2880 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.46 грн |
| 34+ | 12.57 грн |
| 39+ | 11.04 грн |
| 46+ | 9.34 грн |
| 100+ | 7.64 грн |
| 174+ | 5.60 грн |
| 477+ | 5.35 грн |
| FAN53601UC182X |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
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| FAN53611AUC18X |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
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| FGY40T120SMD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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Мінімальне замовлення: 450 шт
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| FGHL40T120RWD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
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| FGY140T120SWD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
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| FGH4L40T120LQD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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| AFGHL40T120RWD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
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| NSPM5131MUTBG |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Breakdown voltage: 16.5V
Max. off-state voltage: 13.5V
Kind of package: reel; tape
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Breakdown voltage: 16.5V
Max. off-state voltage: 13.5V
Kind of package: reel; tape
Type of diode: TVS
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| 2N6284G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Current gain: 100...18000
Mounting: THT
Kind of package: in-tray
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Current gain: 100...18000
Mounting: THT
Kind of package: in-tray
на замовлення 112 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 517.51 грн |
| 4+ | 292.06 грн |
| 10+ | 275.93 грн |
| 2N6292G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
на замовлення 960 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 100.58 грн |
| 6+ | 73.02 грн |
| 10+ | 61.81 грн |
| 50+ | 40.50 грн |
| 100+ | 38.21 грн |
| NDT2955 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3079 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.20 грн |
| 10+ | 43.47 грн |
| 50+ | 35.74 грн |
| 56+ | 17.49 грн |
| 152+ | 16.56 грн |
| NTF2955T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.29 грн |
| 5+ | 98.49 грн |
| 10+ | 75.48 грн |
| 20+ | 65.88 грн |
| 50+ | 54.93 грн |
| 100+ | 48.14 грн |
| 200+ | 42.54 грн |
| NVF2955T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 154mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 154mΩ
на замовлення 635 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 85.95 грн |
| 10+ | 62.83 грн |
| 25+ | 51.79 грн |
| MJD2955G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: tube
Frequency: 2MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: tube
Frequency: 2MHz
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.18 грн |
| 12+ | 37.87 грн |
| MJE2955TG |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Current gain: 20...100
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Current gain: 20...100
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.06 грн |
| 10+ | 68.77 грн |
| 24+ | 41.43 грн |
| 65+ | 39.22 грн |
| SVD2955T4G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
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| MJD2955T4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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| MJF2955G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Mounting: THT
Collector-emitter voltage: 90V
Power dissipation: 30W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: TO220FP
Frequency: 2MHz
Collector current: 10A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Mounting: THT
Collector-emitter voltage: 90V
Power dissipation: 30W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: TO220FP
Frequency: 2MHz
Collector current: 10A
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| NCV8535MN500R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
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| NCV8535MN330R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
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| MM74HCT14M |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Kind of input: with Schmitt trigger
Family: HCT
Quiescent current: 10µA
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Kind of input: with Schmitt trigger
Family: HCT
Quiescent current: 10µA
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
на замовлення 84 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.83 грн |
| 20+ | 22.07 грн |
| 25+ | 20.63 грн |
| 55+ | 19.44 грн |
| 63+ | 15.45 грн |
| MC74HCT14ADG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: tube
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 30.17 грн |
| 23+ | 19.02 грн |
| 26+ | 16.73 грн |
| MM74HCT14MX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 13ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 13ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
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| MC74HCT14ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| MC74HCT14ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
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В кошику
од. на суму грн.
| MM74HCT14MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 13ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Number of inputs: 1
Delay time: 13ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC33164D-5R2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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В кошику
од. на суму грн.
| MC33164D-3R2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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од. на суму грн.
| MC33164DM-3R2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MC33164DM-5R2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MC34164D-5G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
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В кошику
од. на суму грн.
| MC34164D-5R2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
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В кошику
од. на суму грн.
| NCV4949CDR2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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од. на суму грн.
| NCV4949CPDR2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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од. на суму грн.
| CAT24C16WI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 900ns
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 900ns
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
на замовлення 308 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.43 грн |
| 25+ | 23.60 грн |
| 50+ | 22.58 грн |
| 60+ | 16.13 грн |
| 165+ | 15.28 грн |
| N24C16UDTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.6...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...85°C
Clock frequency: 1MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.6...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...85°C
Clock frequency: 1MHz
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| N24C16UVTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV24C16DTVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
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| NV24C16DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV24C16MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV24C16SNVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.