| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NCP1053ST44T3G | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.4A Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 15Ω Operating voltage: 7.5...10V DC |
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| NCP1055ST100T3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 680mA Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 15Ω Operating voltage: 7.5...10V DC |
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| FDMC86262P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8 Gate charge: 9.1nC On-state resistance: 307mΩ Power dissipation: 40W Gate-source voltage: ±25V Kind of channel: enhancement Type of transistor: P-MOSFET Case: WDFN8 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -150V Pulsed drain current: -35A Drain current: -2A |
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| FDMC86259P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33 Gate charge: 32nC On-state resistance: 178mΩ Power dissipation: 62W Gate-source voltage: ±25V Kind of channel: enhancement Type of transistor: P-MOSFET Case: Power33 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -150V Pulsed drain current: -20A Drain current: -13A |
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| FDMC86260 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 135A; 54W; WDFN8 Gate charge: 15nC On-state resistance: 34mΩ Power dissipation: 54W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Case: WDFN8 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 150V Pulsed drain current: 135A Drain current: 25A |
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| FDMC86261P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33 Gate charge: 24nC On-state resistance: 269mΩ Power dissipation: 40W Gate-source voltage: ±25V Kind of channel: enhancement Type of transistor: P-MOSFET Case: Power33 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -150V Pulsed drain current: -20A Drain current: -9A |
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| FDMC8622 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8 Gate charge: 7.3nC On-state resistance: 98mΩ Power dissipation: 31W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Case: WDFN8 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 30A Drain current: 16A |
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| FDMC86240 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 40W; WDFN8 On-state resistance: 97mΩ Power dissipation: 40W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Case: WDFN8 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 150V Drain current: 16A |
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| FDMC86244 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8 Gate charge: 5.9nC On-state resistance: 254mΩ Power dissipation: 26W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Case: WDFN8 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 150V Pulsed drain current: 12A Drain current: 9.4A |
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| FDMC86248 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 13A; Idm: 15A; 36W; Power33 Gate charge: 9nC On-state resistance: 183mΩ Power dissipation: 36W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Case: Power33 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 150V Pulsed drain current: 15A Drain current: 13A |
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| FDMC86260ET150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33 Gate charge: 21nC On-state resistance: 69mΩ Power dissipation: 65W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Case: Power33 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 150V Pulsed drain current: 116A Drain current: 18A |
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| NC7WZ07P6X-L22347 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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NCP785AH33T1G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5% Mounting: SMD Number of channels: 1 Case: SOT89 Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Output current: 10mA Output voltage: 3.3V Tolerance: ±5% Input voltage: 25...450V Kind of voltage regulator: fixed; linear Manufacturer series: NCP785A |
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| KSC3503DS | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 7W; TO126ISO Mounting: THT Collector-emitter voltage: 300V Current gain: 60...120 Type of transistor: NPN Frequency: 150MHz Case: TO126ISO Kind of package: bulk Collector current: 0.1A Pulsed collector current: 0.2A Polarisation: bipolar Power dissipation: 7W |
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| FDMS003N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 92A Pulsed drain current: 658A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMYS003N08LHTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 132A; Idm: 900A; 68W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 132A Pulsed drain current: 900A Power dissipation: 68W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMA1032CZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 3.7/-3.1A Power dissipation: 1.4W Case: WDFN6 Gate-source voltage: ±12V On-state resistance: 68/95mΩ Mounting: SMD Gate charge: 4/7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| FDMS86310 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56 Type of transistor: N-MOSFET Case: Power56 Kind of package: reel; tape Mounting: SMD Kind of channel: enhancement Polarisation: unipolar Gate charge: 95nC On-state resistance: 7.2mΩ Gate-source voltage: ±20V Drain current: 50A Drain-source voltage: 80V Power dissipation: 96W Pulsed drain current: 100A |
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FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Kind of package: reel; tape Case: DFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain current: -65A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 13mΩ Gate-source voltage: ±16V Power dissipation: 107W Application: automotive industry |
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| NCV274DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; TSSOP14; 2.7÷36VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: SMT Number of channels: quad Case: TSSOP14 Slew rate: 2.4V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 2.7...36V DC Integrated circuit features: rail-to-rail output Kind of package: reel; tape Input bias current: 1.5nA Input offset current: 0.2nA |
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| NCV4274CDT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Mounting: SMD Number of channels: 1 Case: DPAK Kind of package: reel; tape Output current: 0.4A Output voltage: 5V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
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| NCV4274ADT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Mounting: SMD Number of channels: 1 Case: DPAK Kind of package: reel; tape Output current: 0.4A Output voltage: 5V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
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| NCV33274ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 24MHz Mounting: SMT Number of channels: quad Case: TSSOP14 Slew rate: 10V/μs Operating temperature: -40...125°C Input offset voltage: 3.5mV Voltage supply range: ± 1.5...18V DC; 3...36V DC Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 80nA |
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| FDWS86368-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8 Polarisation: unipolar Gate charge: 57nC On-state resistance: 4.5mΩ Gate-source voltage: ±20V Drain current: 80A Drain-source voltage: 80V Power dissipation: 214W Case: DFNW8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
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NJW3281G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 200W Case: TO3P Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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MC14175BDG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: tube Trigger: positive-edge-triggered |
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MC14175BDR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
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GBU6M | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 726 шт: термін постачання 21-30 дні (днів) |
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NRVB120VLSFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Max. forward voltage: 0.34V Load current: 1A Max. forward impulse current: 45A Max. off-state voltage: 20V Case: SOD123F Kind of package: reel; tape Application: automotive industry Semiconductor structure: single diode |
на замовлення 3124 шт: термін постачання 21-30 дні (днів) |
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| NRVBS260NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 60V Load current: 2A Case: SMB Max. forward voltage: 0.55V Max. forward impulse current: 60A Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Application: automotive industry |
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LP2951CM | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.26÷28V; 0.1A; SO8 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.6V Output voltage: 1.26...28V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Number of channels: 1 Input voltage: 6...28V |
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MMQA5V6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; Ch: 4; ±5% Type of diode: TVS array Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC74-6 Max. off-state voltage: 3V Number of channels: 4 Kind of package: reel; tape Application: universal Version: ESD Tolerance: ±5% Breakdown voltage: 5.6V |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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| NVH640S75L4SPB | ONSEMI |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SSDC33 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 750V Collector current: 640A Case: SSDC33 Application: automotive industry Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.28kA Mechanical mounting: screw |
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| FSV20100V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 270A Kind of package: reel; tape |
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| DTC115TM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Case: SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Collector-emitter voltage: 50V Current gain: 160...350 Quantity in set/package: 8000pcs. Base resistor: 100kΩ |
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NVR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 2351 шт: термін постачання 21-30 дні (днів) |
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| NCP1060AP100G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -40...125°C Output current: 0.3A Number of channels: 1 On-state resistance: 41Ω Operating voltage: 7...20V DC Frequency: 90...110kHz Kind of integrated circuit: AC/DC switcher; PWM controller Topology: buck; buck-boost; flyback Case: DIP7 |
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| NCP1063AP100G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -40...125°C Output current: 0.78A Number of channels: 1 On-state resistance: 14Ω Operating voltage: 7...20V DC Frequency: 90...110kHz Kind of integrated circuit: AC/DC switcher; PWM controller Topology: buck; buck-boost; flyback Case: DIP7 |
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| NCP1079AAP100G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -40...125°C Output current: 1.05A Number of channels: 1 On-state resistance: 3.9Ω Operating voltage: 6.5...20V DC Frequency: 90...110kHz Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Case: DIP8 |
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MC14516BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; binary up/down counter; CMOS; SMD; SO16; HEF4000B Supply voltage: 3...18V DC Mounting: SMD Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of package: reel; tape Kind of integrated circuit: binary up/down counter Case: SO16 Operating temperature: -55...125°C Quiescent current: 600µA |
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| NCP1361AABAYSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; TSOP6; flyback; 6.5÷26VDC Operating temperature: -40...125°C Output current: -300...500mA Number of channels: 1 Operating voltage: 6.5...26V DC Frequency: 75...85kHz Case: TSOP6 Topology: flyback Mounting: SMD Type of integrated circuit: PMIC |
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| NCP1366AABAYDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO7; flyback; 6.5÷26VDC Operating temperature: -40...125°C Output current: -300...500mA Number of channels: 1 Operating voltage: 6.5...26V DC Frequency: 75...85kHz Case: SO7 Topology: flyback Mounting: SMD Type of integrated circuit: PMIC |
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MC14511BDR2G | ONSEMI |
Category: Latches Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape |
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| MC14511BDWR2G | ONSEMI |
Category: Latches Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SO16WB Operating temperature: -55...125°C Kind of package: reel; tape |
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| NRVS3GB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
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| NRVHPM120T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Application: automotive industry Case: POWERMITE Mounting: SMD Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Reverse recovery time: 50ns Load current: 1A Max. forward voltage: 1.1V Max. load current: 2A Max. forward impulse current: 30A Max. off-state voltage: 200V |
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H11L1M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Case: DIP6 Transfer rate: 1Mbps Turn-on time: 650ns Turn-off time: 1.2µs Slew rate: 5.3kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NTBG028N170M1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 53A Pulsed drain current: 195A Power dissipation: 214W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 222nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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В кошику од. на суму грн. | |||||||||||||||
| NVA4001NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75 Case: SC75 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Version: ESD Kind of channel: enhancement On-state resistance: 3Ω Gate-source voltage: ±10V Drain-source voltage: 20V Pulsed drain current: 0.714A Polarisation: unipolar Drain current: 0.238A Power dissipation: 0.3W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC14053BDG | ONSEMI |
Category: Integrated circuits - Unclassified Description: MC14053BDG |
на замовлення 3932 шт: термін постачання 21-30 дні (днів) |
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 |
1N5233B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6V; bulk; CASE017AG; single diode; 5uA; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N52xxB Kind of package: bulk |
на замовлення 4356 шт: термін постачання 21-30 дні (днів) |
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 |
1N5230BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Leakage current: 5µA |
на замовлення 4866 шт: термін постачання 21-30 дні (днів) |
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 |
1N5235BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode; 3uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.8V Leakage current: 3µA Manufacturer series: 1N52xxB |
на замовлення 4859 шт: термін постачання 21-30 дні (днів) |
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 |
1N5250B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA Case: CASE017AG Mounting: THT Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.1µA Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 20V Manufacturer series: 1N52xxB Kind of package: bulk |
на замовлення 4930 шт: термін постачання 21-30 дні (днів) |
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| 1N5231CTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5235B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 3uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: bulk Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.8V Leakage current: 3µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5233BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N52xxB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5234BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.2V Leakage current: 5µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5237BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode; 3uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 8.2V Leakage current: 3µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5231C | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP1053ST44T3G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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В кошику
од. на суму грн.
| NCP1055ST100T3G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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В кошику
од. на суму грн.
| FDMC86262P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Gate charge: 9.1nC
On-state resistance: 307mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -35A
Drain current: -2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Gate charge: 9.1nC
On-state resistance: 307mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -35A
Drain current: -2A
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В кошику
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| FDMC86259P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Gate charge: 32nC
On-state resistance: 178mΩ
Power dissipation: 62W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -13A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Gate charge: 32nC
On-state resistance: 178mΩ
Power dissipation: 62W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -13A
товару немає в наявності
В кошику
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| FDMC86260 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 135A; 54W; WDFN8
Gate charge: 15nC
On-state resistance: 34mΩ
Power dissipation: 54W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 135A
Drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 135A; 54W; WDFN8
Gate charge: 15nC
On-state resistance: 34mΩ
Power dissipation: 54W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 135A
Drain current: 25A
товару немає в наявності
В кошику
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| FDMC86261P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Gate charge: 24nC
On-state resistance: 269mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -9A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Gate charge: 24nC
On-state resistance: 269mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -9A
товару немає в наявності
В кошику
од. на суму грн.
| FDMC8622 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Gate charge: 7.3nC
On-state resistance: 98mΩ
Power dissipation: 31W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 30A
Drain current: 16A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Gate charge: 7.3nC
On-state resistance: 98mΩ
Power dissipation: 31W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 30A
Drain current: 16A
товару немає в наявності
В кошику
од. на суму грн.
| FDMC86240 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 40W; WDFN8
On-state resistance: 97mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 40W; WDFN8
On-state resistance: 97mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
товару немає в наявності
В кошику
од. на суму грн.
| FDMC86244 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 12A
Drain current: 9.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 12A
Drain current: 9.4A
товару немає в наявності
В кошику
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| FDMC86248 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; Idm: 15A; 36W; Power33
Gate charge: 9nC
On-state resistance: 183mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 15A
Drain current: 13A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; Idm: 15A; 36W; Power33
Gate charge: 9nC
On-state resistance: 183mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 15A
Drain current: 13A
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В кошику
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| FDMC86260ET150 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Gate charge: 21nC
On-state resistance: 69mΩ
Power dissipation: 65W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 116A
Drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Gate charge: 21nC
On-state resistance: 69mΩ
Power dissipation: 65W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 116A
Drain current: 18A
товару немає в наявності
В кошику
од. на суму грн.
| NC7WZ07P6X-L22347 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.78 грн |
| NCP785AH33T1G |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 3.3V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 3.3V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
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| KSC3503DS |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 7W; TO126ISO
Mounting: THT
Collector-emitter voltage: 300V
Current gain: 60...120
Type of transistor: NPN
Frequency: 150MHz
Case: TO126ISO
Kind of package: bulk
Collector current: 0.1A
Pulsed collector current: 0.2A
Polarisation: bipolar
Power dissipation: 7W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 7W; TO126ISO
Mounting: THT
Collector-emitter voltage: 300V
Current gain: 60...120
Type of transistor: NPN
Frequency: 150MHz
Case: TO126ISO
Kind of package: bulk
Collector current: 0.1A
Pulsed collector current: 0.2A
Polarisation: bipolar
Power dissipation: 7W
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| FDMS003N08C |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 92A
Pulsed drain current: 658A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 92A
Pulsed drain current: 658A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMYS003N08LHTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 132A; Idm: 900A; 68W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 132A
Pulsed drain current: 900A
Power dissipation: 68W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 132A; Idm: 900A; 68W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 132A
Pulsed drain current: 900A
Power dissipation: 68W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMA1032CZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.7/-3.1A
Power dissipation: 1.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 68/95mΩ
Mounting: SMD
Gate charge: 4/7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.7/-3.1A
Power dissipation: 1.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 68/95mΩ
Mounting: SMD
Gate charge: 4/7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.47 грн |
| 18+ | 23.55 грн |
| 100+ | 20.83 грн |
| 500+ | 18.67 грн |
| 1000+ | 17.71 грн |
| FDMS86310 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
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| FDWS9509L-F085 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Kind of package: reel; tape
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Kind of package: reel; tape
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
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| NCV274DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; TSSOP14; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 2.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 2.7...36V DC
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; TSSOP14; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 2.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 2.7...36V DC
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 0.2nA
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| NCV4274CDT50RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: DPAK
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: DPAK
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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| NCV4274ADT50RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: DPAK
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: DPAK
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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| NCV33274ADTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...125°C
Input offset voltage: 3.5mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...125°C
Input offset voltage: 3.5mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
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| FDWS86368-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 80V
Power dissipation: 214W
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 80V
Power dissipation: 214W
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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| NJW3281G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 286.45 грн |
| 3+ | 237.95 грн |
| 10+ | 210.71 грн |
| MC14175BDG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Trigger: positive-edge-triggered
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| MC14175BDR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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| GBU6M |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 726 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.98 грн |
| 10+ | 53.68 грн |
| NRVB120VLSFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.34V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 20V
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.34V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 20V
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
на замовлення 3124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.24 грн |
| 16+ | 26.28 грн |
| 17+ | 23.63 грн |
| 100+ | 16.34 грн |
| 500+ | 12.74 грн |
| NRVBS260NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 2A
Case: SMB
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 2A
Case: SMB
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Application: automotive industry
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| LP2951CM |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.26÷28V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.26...28V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 6...28V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.26÷28V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.26...28V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 6...28V
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| MMQA5V6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; Ch: 4; ±5%
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74-6
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Version: ESD
Tolerance: ±5%
Breakdown voltage: 5.6V
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; Ch: 4; ±5%
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74-6
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Version: ESD
Tolerance: ±5%
Breakdown voltage: 5.6V
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.98 грн |
| 29+ | 13.94 грн |
| 32+ | 12.58 грн |
| 50+ | 9.53 грн |
| 100+ | 8.33 грн |
| 500+ | 5.93 грн |
| 1000+ | 5.45 грн |
| NVH640S75L4SPB |
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SSDC33
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 750V
Collector current: 640A
Case: SSDC33
Application: automotive industry
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.28kA
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SSDC33
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 750V
Collector current: 640A
Case: SSDC33
Application: automotive industry
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.28kA
Mechanical mounting: screw
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| FSV20100V |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 270A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 270A
Kind of package: reel; tape
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| DTC115TM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Collector-emitter voltage: 50V
Current gain: 160...350
Quantity in set/package: 8000pcs.
Base resistor: 100kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Collector-emitter voltage: 50V
Current gain: 160...350
Quantity in set/package: 8000pcs.
Base resistor: 100kΩ
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| NVR4501NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2351 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.32 грн |
| 15+ | 27.48 грн |
| 100+ | 17.95 грн |
| 250+ | 15.38 грн |
| 500+ | 13.78 грн |
| 1000+ | 12.42 грн |
| NCP1060AP100G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.3A
Number of channels: 1
On-state resistance: 41Ω
Operating voltage: 7...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Case: DIP7
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.3A
Number of channels: 1
On-state resistance: 41Ω
Operating voltage: 7...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Case: DIP7
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| NCP1063AP100G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.78A
Number of channels: 1
On-state resistance: 14Ω
Operating voltage: 7...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Case: DIP7
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.78A
Number of channels: 1
On-state resistance: 14Ω
Operating voltage: 7...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Case: DIP7
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| NCP1079AAP100G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 1.05A
Number of channels: 1
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Case: DIP8
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 1.05A
Number of channels: 1
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Case: DIP8
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| MC14516BDR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up/down counter; CMOS; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Mounting: SMD
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Kind of integrated circuit: binary up/down counter
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 600µA
Category: Counters/dividers
Description: IC: digital; binary up/down counter; CMOS; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Mounting: SMD
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Kind of integrated circuit: binary up/down counter
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 600µA
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| NCP1361AABAYSNT1G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback; 6.5÷26VDC
Operating temperature: -40...125°C
Output current: -300...500mA
Number of channels: 1
Operating voltage: 6.5...26V DC
Frequency: 75...85kHz
Case: TSOP6
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback; 6.5÷26VDC
Operating temperature: -40...125°C
Output current: -300...500mA
Number of channels: 1
Operating voltage: 6.5...26V DC
Frequency: 75...85kHz
Case: TSOP6
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
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| NCP1366AABAYDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO7; flyback; 6.5÷26VDC
Operating temperature: -40...125°C
Output current: -300...500mA
Number of channels: 1
Operating voltage: 6.5...26V DC
Frequency: 75...85kHz
Case: SO7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO7; flyback; 6.5÷26VDC
Operating temperature: -40...125°C
Output current: -300...500mA
Number of channels: 1
Operating voltage: 6.5...26V DC
Frequency: 75...85kHz
Case: SO7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
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| MC14511BDR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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| MC14511BDWR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Kind of package: reel; tape
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| NRVS3GB |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
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| NRVHPM120T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Application: automotive industry
Case: POWERMITE
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 2A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Application: automotive industry
Case: POWERMITE
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 2A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
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| H11L1M |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Transfer rate: 1Mbps
Turn-on time: 650ns
Turn-off time: 1.2µs
Slew rate: 5.3kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Transfer rate: 1Mbps
Turn-on time: 650ns
Turn-off time: 1.2µs
Slew rate: 5.3kV/μs
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| NTBG028N170M1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 53A
Pulsed drain current: 195A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 53A
Pulsed drain current: 195A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NVA4001NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
On-state resistance: 3Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Pulsed drain current: 0.714A
Polarisation: unipolar
Drain current: 0.238A
Power dissipation: 0.3W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
On-state resistance: 3Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Pulsed drain current: 0.714A
Polarisation: unipolar
Drain current: 0.238A
Power dissipation: 0.3W
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| MC14053BDG |
|
на замовлення 3932 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 48+ | 17.69 грн |
| 1N5233B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; bulk; CASE017AG; single diode; 5uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; bulk; CASE017AG; single diode; 5uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: bulk
на замовлення 4356 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.90 грн |
| 100+ | 4.01 грн |
| 136+ | 2.95 грн |
| 213+ | 1.88 грн |
| 500+ | 1.31 грн |
| 1000+ | 1.23 грн |
| 1N5230BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Leakage current: 5µA
на замовлення 4866 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.90 грн |
| 103+ | 3.93 грн |
| 135+ | 2.98 грн |
| 204+ | 1.97 грн |
| 500+ | 1.33 грн |
| 1000+ | 1.23 грн |
| 1N5235BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Leakage current: 3µA
Manufacturer series: 1N52xxB
на замовлення 4859 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.90 грн |
| 114+ | 3.53 грн |
| 136+ | 2.95 грн |
| 179+ | 2.24 грн |
| 250+ | 1.87 грн |
| 500+ | 1.61 грн |
| 1000+ | 1.39 грн |
| 1N5250B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
Kind of package: bulk
на замовлення 4930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.90 грн |
| 117+ | 3.44 грн |
| 157+ | 2.56 грн |
| 242+ | 1.66 грн |
| 500+ | 1.23 грн |
| 1N5231CTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 5µA
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| 1N5235B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Leakage current: 3µA
Manufacturer series: 1N52xxB
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| 1N5233BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
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| 1N5234BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
Leakage current: 5µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
Leakage current: 5µA
Manufacturer series: 1N52xxB
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| 1N5237BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 8.2V
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 8.2V
Leakage current: 3µA
Manufacturer series: 1N52xxB
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| 1N5231C |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 5µA
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од. на суму грн.