| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NST30010MXV6T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.5W; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NRVBA130LNT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.47V Load current: 1A Max. load current: 2A Max. forward impulse current: 25A Max. off-state voltage: 30V Application: automotive industry Case: SMA Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
| MC74VHC1GT14DFT1G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA Type of integrated circuit: digital Kind of integrated circuit: inverter; Schmitt trigger Case: SC70-5 Mounting: SMD Family: VHC Operating temperature: -55...125°C Quiescent current: 1µA Number of inputs: 1 Number of channels: 1 Technology: CMOS |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC1GT14DFT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 18000 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC1GT14DFT2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 75000 шт: термін постачання 21-30 дні (днів) |
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| FOD8333 | ONSEMI |
Category: Optocouplers - othersDescription: Optocoupler; SMD; OUT: totem pole; Uinsul: 4243V; SO16; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Kind of output: totem pole Turn-off time: 50ns Turn-on time: 50ns Max. off-state voltage: 5V Insulation voltage: 4.243kV Slew rate: 50kV/μs Case: SO16 |
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HCPL2630 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 2; OUT: logic; 2.5kV; 10Mbps; DIP8; 10kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 2.5kV Transfer rate: 10Mbps Case: DIP8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 10kV/μs |
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74VHC573MTC | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: VHC Trigger: level-triggered Supply voltage: 2...5.5V DC Manufacturer series: VHC |
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74VHC573MTCX | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: VHC Quiescent current: 40µA Trigger: level-triggered Supply voltage: 2...5.5V DC Kind of package: reel; tape Manufacturer series: VHC |
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| 74VHC573MX | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; SO20-W; VHC; -40÷85°C; VHC Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Family: VHC Quiescent current: 40µA Trigger: level-triggered Supply voltage: 2...5.5V DC Kind of package: reel; tape Manufacturer series: VHC |
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| MC74VHC573DWR2G | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Family: VHC Kind of output: 3-state Supply voltage: 2...5.5V DC Kind of package: reel; tape Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NTHL125N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FAN251030MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SMD; reel,tape Kind of integrated circuit: DC/DC converter Mounting: SMD Type of integrated circuit: PMIC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV890430MW50TXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry Kind of package: reel; tape Mounting: SMD Application: automotive industry Kind of integrated circuit: DC/DC converter Case: DFN8 Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV898031D1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Mounting: SMD Type of integrated circuit: PMIC Case: SO8 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NTD3055-150T4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 27A; 28.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 27A Power dissipation: 28.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 2N7002LT7G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 115mA; Idm: 0.8A; 225mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| 2N7002L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 60V; 115mA; 200mW; SOT23; SMT Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: 20V On-state resistance: 7.5Ω Mounting: SMD Kind of channel: enhancement Electrical mounting: SMT Technology: PowerTrench® |
на замовлення 11210 шт: термін постачання 21-30 дні (днів) |
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FDS6910 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8 Case: SO8 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET x2 Mounting: SMD On-state resistance: 20mΩ Power dissipation: 1.6W Drain current: 7.5A Gate-source voltage: ±20V Drain-source voltage: 30V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MJD243T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 12.5W Case: DPAK Current gain: 40...180 Mounting: SMD Kind of package: reel; tape Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NJVMJD243T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 12.5W Case: DPAK Current gain: 40...180 Mounting: SMD Kind of package: reel; tape Frequency: 40MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MJD253T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 12.5W Case: DPAK Current gain: 40...180 Mounting: SMD Kind of package: reel; tape Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NJVMJD253T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 12.5W Case: DPAK Current gain: 40...180 Mounting: SMD Kind of package: reel; tape Frequency: 40MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
SMS05CT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.2÷7.2V; 24A; 350W; common anode; TSOP6; Ch: 5 Type of diode: TVS array Breakdown voltage: 6.2...7.2V Max. forward impulse current: 24A Peak pulse power dissipation: 0.35kW Semiconductor structure: common anode Mounting: SMD Case: TSOP6 Max. off-state voltage: 5V Number of channels: 5 Kind of package: reel; tape Application: universal Version: ESD |
на замовлення 247 шт: термін постачання 21-30 дні (днів) |
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| MOC3082SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Manufacturer series: MOC3082M |
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| MOC3082SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: tube Manufacturer series: MOC3082M |
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В кошику од. на суму грн. | |||||||||||||||
| MOC3082SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: reel; tape Manufacturer series: MOC3082M |
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| MOC3082TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Manufacturer series: MOC3082M |
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В кошику од. на суму грн. | |||||||||||||||
| MOC3082VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Manufacturer series: MOC3082M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP51400MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Case: DFN10 |
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В кошику од. на суму грн. | |||||||||||||||
| NCP51401MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Case: DFN10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP51402MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Case: DFN10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP51403MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Type of integrated circuit: PMIC Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Case: DFN10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV51400MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Application: automotive industry; for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Type of integrated circuit: PMIC Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Case: DFN10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV51400MWTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Application: automotive industry; for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Type of integrated circuit: PMIC Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Case: DFN10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FAN251040MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SMD; reel,tape Kind of integrated circuit: DC/DC converter Mounting: SMD Type of integrated circuit: PMIC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP81140MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; QFN32; buck; 4÷6.5VDC Topology: buck Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...100°C Output current: 850µA Operating voltage: 4...6.5V DC Number of channels: 1 Case: QFN32 Frequency: 290...590kHz |
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В кошику од. на суму грн. | |||||||||||||||
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H11D1SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Mounting: SMD Turn-on time: 5µs Turn-off time: 5µs Type of optocoupler: optocoupler Number of channels: 1 Max. off-state voltage: 6V Case: PDIP6 Kind of output: transistor CTR@If: 20%@10mA Collector-emitter voltage: 300V Insulation voltage: 4.17kV |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| H11D1SR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Number of channels: 1 Kind of output: transistor Max. off-state voltage: 6V Mounting: SMD Type of optocoupler: optocoupler CTR@If: 20%@10mA Collector-emitter voltage: 300V Insulation voltage: 4.17kV Turn-on time: 5µs Case: PDIP6 Turn-off time: 5µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ESD7004MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4 Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: common anode; quadruple Mounting: SMD Case: uDFN10 Max. off-state voltage: 5V Kind of package: reel; tape Application: HDMI; USB Number of channels: 4 |
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В кошику од. на суму грн. | |||||||||||||||
| SZESD7004MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: common anode; quadruple Mounting: SMD Case: uDFN10 Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LM2903M | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 200nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Mounting: SMT Case: SO8 Operating temperature: -40...105°C Input offset voltage: 15mV Kind of package: tube Input offset current: 200nA Operating voltage: 2...36V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC547B | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Frequency: 300MHz |
на замовлення 2333 шт: термін постачання 21-30 дні (днів) |
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MC14052BDR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC Type of integrated circuit: analog switch Number of channels: 2 Case: SO16 Supply voltage: 3...18V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 600µA Technology: CMOS Kind of output: DP4T Kind of integrated circuit: demultiplexer; multiplexer |
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| MC14052BDG | ONSEMI |
Category: UnclassifiedDescription: MC14052BDG |
на замовлення 3308 шт: термін постачання 21-30 дні (днів) |
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| NLA9306MU3TAG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: uDFN8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; SMBus; translator |
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В кошику од. на суму грн. | |||||||||||||||
| NLA9306MU3TCG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: uDFN8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; SMBus; translator |
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В кошику од. на суму грн. | |||||||||||||||
| NLA9306MUQ1TCG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: UQFN8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; SMBus; translator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NLV9306USG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: digital Case: US8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 0...5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; logic level voltage translator |
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В кошику од. на суму грн. | |||||||||||||||
| FXWA9306L8X | ONSEMI |
Category: Level translatorsDescription: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: MicorPAK8 Kind of output: open drain Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1...5.5V DC Number of outputs: 2 Number of channels: 2 Number of inputs: 2 Kind of integrated circuit: 3-state; logic level voltage translator Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing |
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| NTP055N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 132A Power dissipation: 305W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
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| FCP125N65S3R0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
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| FCP165N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 47.5A Power dissipation: 154W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
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| FCB125N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
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| FCH125N65S3R0-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
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| FCH165N65S3R0-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.3A Pulsed drain current: 47.5A Power dissipation: 154W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
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| FCP125N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
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| NTB095N65S3HF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
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| SZNSP2201MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Semiconductor structure: unidirectional Number of channels: 2 Max. off-state voltage: 5V Breakdown voltage: 6V Case: TSOP6 Application: automotive industry |
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|
MC74AC125DR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: AC Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC |
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| NST30010MXV6T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.5W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.5W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NRVBA130LNT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.47V
Load current: 1A
Max. load current: 2A
Max. forward impulse current: 25A
Max. off-state voltage: 30V
Application: automotive industry
Case: SMA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.47V
Load current: 1A
Max. load current: 2A
Max. forward impulse current: 25A
Max. off-state voltage: 30V
Application: automotive industry
Case: SMA
Kind of package: reel; tape
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| MC74VHC1GT14DFT1G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Kind of integrated circuit: inverter; Schmitt trigger
Case: SC70-5
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Number of channels: 1
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Kind of integrated circuit: inverter; Schmitt trigger
Case: SC70-5
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Number of channels: 1
Technology: CMOS
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.22 грн |
| MC74VHC1GT14DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.22 грн |
| MC74VHC1GT14DFT2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 75000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.43 грн |
| FOD8333 |
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Виробник: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: totem pole; Uinsul: 4243V; SO16; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: totem pole
Turn-off time: 50ns
Turn-on time: 50ns
Max. off-state voltage: 5V
Insulation voltage: 4.243kV
Slew rate: 50kV/μs
Case: SO16
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: totem pole; Uinsul: 4243V; SO16; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: totem pole
Turn-off time: 50ns
Turn-on time: 50ns
Max. off-state voltage: 5V
Insulation voltage: 4.243kV
Slew rate: 50kV/μs
Case: SO16
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| HCPL2630 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; 2.5kV; 10Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; 2.5kV; 10Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
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| 74VHC573MTC |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHC
Trigger: level-triggered
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHC
Trigger: level-triggered
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
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| 74VHC573MTCX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 40µA
Trigger: level-triggered
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 40µA
Trigger: level-triggered
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
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| 74VHC573MX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; SO20-W; VHC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 40µA
Trigger: level-triggered
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; SO20-W; VHC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 40µA
Trigger: level-triggered
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
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| MC74VHC573DWR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: VHC
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: VHC
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
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| NTHL125N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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| FAN251030MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
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| NCV890430MW50TXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Kind of package: reel; tape
Mounting: SMD
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: DFN8
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Kind of package: reel; tape
Mounting: SMD
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: DFN8
Type of integrated circuit: PMIC
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| NCV898031D1R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Case: SO8
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Case: SO8
Application: automotive industry
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| NTD3055-150T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 27A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 27A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 2N7002LT7G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; Idm: 0.8A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; Idm: 0.8A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| 2N7002L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 115mA; 200mW; SOT23; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 115mA; 200mW; SOT23; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Technology: PowerTrench®
на замовлення 11210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.59 грн |
| FDS6910 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Mounting: SMD
On-state resistance: 20mΩ
Power dissipation: 1.6W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Mounting: SMD
On-state resistance: 20mΩ
Power dissipation: 1.6W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
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| MJD243T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
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| NJVMJD243T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Application: automotive industry
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| MJD253T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
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| NJVMJD253T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Application: automotive industry
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| SMS05CT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; 24A; 350W; common anode; TSOP6; Ch: 5
Type of diode: TVS array
Breakdown voltage: 6.2...7.2V
Max. forward impulse current: 24A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common anode
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Number of channels: 5
Kind of package: reel; tape
Application: universal
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; 24A; 350W; common anode; TSOP6; Ch: 5
Type of diode: TVS array
Breakdown voltage: 6.2...7.2V
Max. forward impulse current: 24A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common anode
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Number of channels: 5
Kind of package: reel; tape
Application: universal
Version: ESD
на замовлення 247 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.25 грн |
| 30+ | 13.88 грн |
| 33+ | 12.42 грн |
| 38+ | 10.81 грн |
| 50+ | 10.17 грн |
| MOC3082SVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3082M
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| MOC3082SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Manufacturer series: MOC3082M
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| MOC3082SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: MOC3082M
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| MOC3082TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3082M
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| MOC3082VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3082M
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| NCP51400MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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| NCP51401MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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| NCP51402MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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| NCP51403MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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| NCV51400MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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| NCV51400MWTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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| FAN251040MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
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| NCP81140MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Topology: buck
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...100°C
Output current: 850µA
Operating voltage: 4...6.5V DC
Number of channels: 1
Case: QFN32
Frequency: 290...590kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Topology: buck
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...100°C
Output current: 850µA
Operating voltage: 4...6.5V DC
Number of channels: 1
Case: QFN32
Frequency: 290...590kHz
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| H11D1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 5µs
Type of optocoupler: optocoupler
Number of channels: 1
Max. off-state voltage: 6V
Case: PDIP6
Kind of output: transistor
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 5µs
Type of optocoupler: optocoupler
Number of channels: 1
Max. off-state voltage: 6V
Case: PDIP6
Kind of output: transistor
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.37 грн |
| 12+ | 34.85 грн |
| 50+ | 31.54 грн |
| H11D1SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Number of channels: 1
Kind of output: transistor
Max. off-state voltage: 6V
Mounting: SMD
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Number of channels: 1
Kind of output: transistor
Max. off-state voltage: 6V
Mounting: SMD
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 5µs
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| ESD7004MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: HDMI; USB
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: HDMI; USB
Number of channels: 4
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| SZESD7004MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
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| LM2903M |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
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| BC547B |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
на замовлення 2333 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.46 грн |
| 24+ | 17.26 грн |
| 28+ | 14.60 грн |
| 36+ | 11.21 грн |
| 100+ | 7.58 грн |
| 500+ | 5.32 грн |
| 1000+ | 5.16 грн |
| MC14052BDR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Technology: CMOS
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Technology: CMOS
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
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| MC14052BDG |
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на замовлення 3308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 48+ | 19.37 грн |
| NLA9306MU3TAG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
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| NLA9306MU3TCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
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| NLA9306MUQ1TCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: UQFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: UQFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
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| NLV9306USG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: digital
Case: US8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; logic level voltage translator
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: digital
Case: US8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; logic level voltage translator
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| FXWA9306L8X |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: MicorPAK8
Kind of output: open drain
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1...5.5V DC
Number of outputs: 2
Number of channels: 2
Number of inputs: 2
Kind of integrated circuit: 3-state; logic level voltage translator
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: MicorPAK8
Kind of output: open drain
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1...5.5V DC
Number of outputs: 2
Number of channels: 2
Number of inputs: 2
Kind of integrated circuit: 3-state; logic level voltage translator
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
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| NTP055N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| FCP125N65S3R0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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| FCP165N65S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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| FCB125N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCH125N65S3R0-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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| FCH165N65S3R0-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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| FCP125N65S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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| NTB095N65S3HF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SZNSP2201MR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Case: TSOP6
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Case: TSOP6
Application: automotive industry
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| MC74AC125DR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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