| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N5375BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AA Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5375BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: CASE017AA Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MUN5336DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Polarisation: bipolar Kind of transistor: BRT; complementary pair Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Power dissipation: 0.385W Collector-emitter voltage: 50V Current gain: 80...150 Quantity in set/package: 3000pcs. Base-emitter resistor: 100kΩ Base resistor: 100kΩ |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| NSVMUN5336DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Polarisation: bipolar Kind of transistor: BRT; complementary pair Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Power dissipation: 0.385W Collector-emitter voltage: 50V Current gain: 80...150 Quantity in set/package: 3000pcs. Base-emitter resistor: 100kΩ Base resistor: 100kΩ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MURA220T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 200V Features of semiconductor devices: ultrafast switching |
на замовлення 4345 шт: термін постачання 21-30 дні (днів) |
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MC78M18CDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 18V; 0.5A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 18V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC78M00 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 21...33V |
на замовлення 1458 шт: термін постачання 21-30 дні (днів) |
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| MC78M06CDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 6V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 6V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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4N38M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 80V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Collector-emitter voltage: 80V Case: DIP6 Turn-off time: 5µs Turn-on time: 5µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 4N38SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Collector-emitter voltage: 80V Case: PDIP6 Max. off-state voltage: 6V Turn-off time: 5µs Turn-on time: 5µs Manufacturer series: 4N3X CTR@If: 20%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 4N38SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Collector-emitter voltage: 80V Case: Gull wing 6 Turn-off time: 5µs Turn-on time: 5µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC33269DTRK-5.0G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Output voltage: 5V Manufacturer series: MC33269 Operating temperature: -40...125°C Tolerance: ±1% Voltage drop: 1.1V Input voltage: 1.35...10V |
на замовлення 1502 шт: термін постачання 21-30 дні (днів) |
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MC33269DT-3.3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Output voltage: 3.3V Manufacturer series: MC33269 Operating temperature: -40...125°C Tolerance: ±1% Voltage drop: 1.1V Input voltage: 1.35...10V |
на замовлення 908 шт: термін постачання 21-30 дні (днів) |
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| MC33269DTRKG | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33269DTRK-3.3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14538BDG | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator,resettable; CMOS; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Mounting: SMD Case: SO16 Technology: CMOS |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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MC14538BDR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Supply voltage: 3...18V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14538BDTR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator,resettable; TTL; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Supply voltage: 3...18V DC Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Kind of package: reel; tape Technology: TTL Quiescent current: 600µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14538BDWG | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Supply voltage: 3...18V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HUF75344G3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO247 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhancement |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
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1N5338BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 5.1V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 5.1V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BDX53CG | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
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| BDX53BG | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDB150N10 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDI150N10 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: I2PAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN7602CMX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Mounting: SMD Case: SO8 Operating temperature: -25...125°C Kind of package: reel; tape Supply voltage: 8...25V Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN7530MX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: PMIC; PFC controller; SMD; SO8; -40÷125°C; reel,tape; 12÷22V Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Mounting: SMD Case: SO8 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 12...22V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MOC3023M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Output voltage: 400V Manufacturer series: MOC302XM |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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1N5919BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Kind of package: bulk Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N59xxB |
на замовлення 1816 шт: термін постачання 21-30 дні (днів) |
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BD678G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: TO225 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14016BDG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO14 Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer Number of channels: 4 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: SO14 |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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MC14175BDG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: tube Trigger: positive-edge-triggered |
на замовлення 384 шт: термін постачання 21-30 дні (днів) |
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MC14174BDR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; 600uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 6 Technology: TTL Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Quiescent current: 600µA Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14175BDR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF6N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of channel: enhancement Technology: QFET® Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF6N80CT | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 22A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 30nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MUN5131DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
на замовлення 730 шт: термін постачання 21-30 дні (днів) |
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| SMUN5131DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Current gain: 8...15 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDD14AN06LA0-F085 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Mounting: SMD Polarisation: unipolar Gate charge: 32nC On-state resistance: 33mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 125W Drain current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD8447L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 44W Case: DPAK Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1952 шт: термін постачання 21-30 дні (днів) |
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FDP8447L | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 100A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 13.7mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZX79C10-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; Ammo Pack; CASE017AG; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.2µA Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BZX85C10-T50R | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: BZX85C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDC6301N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.9W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Drain-source voltage: 25V Drain current: 0.22A Gate charge: 0.7nC On-state resistance: 9Ω Gate-source voltage: ±0.5V; ±8V |
на замовлення 2555 шт: термін постачання 21-30 дні (днів) |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 60V Drain current: 0.212A On-state resistance: 1.6Ω Gate-source voltage: ±20V |
на замовлення 3050 шт: термін постачання 21-30 дні (днів) |
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NTJD5121NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Drain-source voltage: 60V Drain current: 0.295A Gate charge: 0.9nC On-state resistance: 2.5Ω Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RB751S40T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVRB751S40T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVRB751S40T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZ1SMB5929BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
|
ESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 10nA Version: ESD Max. forward impulse current: 9.6A Peak pulse power dissipation: 240W |
на замовлення 4585 шт: термін постачання 21-30 дні (днів) |
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ESD5Z6.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 6V Breakdown voltage: 6.8V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 10nA Version: ESD Max. forward impulse current: 8.8A Peak pulse power dissipation: 181W |
на замовлення 1788 шт: термін постачання 21-30 дні (днів) |
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ESD5Z7.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 7V Breakdown voltage: 7.5V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 10nA Version: ESD Max. forward impulse current: 8.8A Peak pulse power dissipation: 0.2kW |
на замовлення 5975 шт: термін постачання 21-30 дні (днів) |
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| SZESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZESD5Z6.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.8V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 6V Breakdown voltage: 6.8V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MBRS540T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. load current: 10A Kind of package: reel; tape |
на замовлення 1779 шт: термін постачання 21-30 дні (днів) |
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|
MJD32CG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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| MJD32CRLG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
| MJD32CT4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJVMJD32CG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJVMJD32CT4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N5375BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5375BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| MUN5336DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Collector-emitter voltage: 50V
Current gain: 80...150
Quantity in set/package: 3000pcs.
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Collector-emitter voltage: 50V
Current gain: 80...150
Quantity in set/package: 3000pcs.
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.82 грн |
| 22+ | 19.54 грн |
| 100+ | 11.05 грн |
| 500+ | 6.74 грн |
| 1000+ | 4.12 грн |
| NSVMUN5336DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Collector-emitter voltage: 50V
Current gain: 80...150
Quantity in set/package: 3000pcs.
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Collector-emitter voltage: 50V
Current gain: 80...150
Quantity in set/package: 3000pcs.
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Application: automotive industry
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| MURA220T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: ultrafast switching
на замовлення 4345 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.08 грн |
| 25+ | 17.21 грн |
| 50+ | 13.72 грн |
| 100+ | 12.39 грн |
| 500+ | 9.65 грн |
| 1000+ | 8.57 грн |
| 2000+ | 7.48 грн |
| 2500+ | 7.24 грн |
| MC78M18CDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 18V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 21...33V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 18V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 21...33V
на замовлення 1458 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.87 грн |
| 21+ | 20.13 грн |
| 24+ | 17.88 грн |
| 28+ | 15.38 грн |
| 100+ | 12.81 грн |
| 250+ | 11.81 грн |
| 500+ | 11.31 грн |
| MC78M06CDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 6V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 6V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 6V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 6V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| 4N38M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 80V
Case: DIP6
Turn-off time: 5µs
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 80V
Case: DIP6
Turn-off time: 5µs
Turn-on time: 5µs
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| 4N38SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 80V
Case: PDIP6
Max. off-state voltage: 6V
Turn-off time: 5µs
Turn-on time: 5µs
Manufacturer series: 4N3X
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 80V
Case: PDIP6
Max. off-state voltage: 6V
Turn-off time: 5µs
Turn-on time: 5µs
Manufacturer series: 4N3X
CTR@If: 20%@10mA
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| 4N38SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 80V
Case: Gull wing 6
Turn-off time: 5µs
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 80V
Case: Gull wing 6
Turn-off time: 5µs
Turn-on time: 5µs
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| MC33269DTRK-5.0G | ![]() |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Input voltage: 1.35...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Input voltage: 1.35...10V
на замовлення 1502 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.24 грн |
| 20+ | 21.04 грн |
| 25+ | 18.96 грн |
| 100+ | 16.47 грн |
| 250+ | 15.38 грн |
| 500+ | 15.30 грн |
| MC33269DT-3.3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 3.3V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Input voltage: 1.35...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 3.3V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Input voltage: 1.35...10V
на замовлення 908 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.03 грн |
| 16+ | 26.45 грн |
| 25+ | 24.45 грн |
| 75+ | 23.37 грн |
| 300+ | 21.04 грн |
| 750+ | 20.04 грн |
| MC33269DTRKG |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC33269DTRK-3.3G | ![]() |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 3.3V
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| MC14538BDG | ![]() |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Technology: CMOS
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Technology: CMOS
на замовлення 795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.09 грн |
| 15+ | 27.78 грн |
| 25+ | 25.45 грн |
| 48+ | 24.12 грн |
| 96+ | 22.87 грн |
| 144+ | 22.20 грн |
| 288+ | 21.29 грн |
| 528+ | 20.54 грн |
| MC14538BDR2G |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
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| MC14538BDTR2G |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; TTL; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Supply voltage: 3...18V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: TTL
Quiescent current: 600µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; TTL; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Supply voltage: 3...18V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: TTL
Quiescent current: 600µA
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| MC14538BDWG |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
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| HUF75344G3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 264.45 грн |
| 5+ | 232.85 грн |
| 10+ | 200.42 грн |
| 20+ | 186.28 грн |
| 1N5338BRLG | ![]() |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
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| BDX53CG |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 118 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.71 грн |
| 10+ | 51.39 грн |
| 50+ | 38.59 грн |
| 100+ | 34.43 грн |
| BDX53BG |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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| FDB150N10 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDI150N10 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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| FAN7602CMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Kind of package: reel; tape
Supply voltage: 8...25V
Topology: flyback
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Kind of package: reel; tape
Supply voltage: 8...25V
Topology: flyback
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| FAN7530MX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -40÷125°C; reel,tape; 12÷22V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 12...22V
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -40÷125°C; reel,tape; 12÷22V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 12...22V
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| MOC3023M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
на замовлення 238 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.57 грн |
| 15+ | 29.61 грн |
| 50+ | 24.12 грн |
| 1N5919BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
на замовлення 1816 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.66 грн |
| 19+ | 22.29 грн |
| 22+ | 19.13 грн |
| 28+ | 14.97 грн |
| 100+ | 10.15 грн |
| 500+ | 9.98 грн |
| BD678G |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
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| MC14016BDG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO14
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO14
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.08 грн |
| MC14175BDG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Trigger: positive-edge-triggered
на замовлення 384 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.68 грн |
| 15+ | 29.61 грн |
| 25+ | 26.86 грн |
| 48+ | 25.28 грн |
| 96+ | 23.70 грн |
| 240+ | 22.04 грн |
| 288+ | 21.71 грн |
| MC14174BDR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; 600uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: TTL
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; 600uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: TTL
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Trigger: positive-edge-triggered
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| MC14175BDR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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| FQPF6N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of channel: enhancement
Technology: QFET®
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of channel: enhancement
Technology: QFET®
Kind of package: tube
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| FQPF6N80CT |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30nC
Kind of package: tube
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| MUN5131DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.64 грн |
| 135+ | 3.11 грн |
| 500+ | 2.75 грн |
| SMUN5131DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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| FDD14AN06LA0-F085 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 32nC
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 125W
Drain current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 32nC
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 125W
Drain current: 50A
Kind of package: reel; tape
Application: automotive industry
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| FDD8447L | ![]() |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1952 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.59 грн |
| 9+ | 50.56 грн |
| 10+ | 45.74 грн |
| 25+ | 39.50 грн |
| 50+ | 35.18 грн |
| 100+ | 31.35 грн |
| 500+ | 28.11 грн |
| FDP8447L |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
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| BZX79C10-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; CASE017AG; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; CASE017AG; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX79C
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| BZX85C10-T50R |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX85C
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| FDC6301N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.9W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Drain-source voltage: 25V
Drain current: 0.22A
Gate charge: 0.7nC
On-state resistance: 9Ω
Gate-source voltage: ±0.5V; ±8V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.9W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Drain-source voltage: 25V
Drain current: 0.22A
Gate charge: 0.7nC
On-state resistance: 9Ω
Gate-source voltage: ±0.5V; ±8V
на замовлення 2555 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.03 грн |
| 18+ | 23.78 грн |
| 50+ | 17.63 грн |
| 100+ | 15.30 грн |
| 500+ | 10.64 грн |
| 1000+ | 9.06 грн |
| NVJD5121NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 60V
Drain current: 0.212A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 60V
Drain current: 0.212A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
на замовлення 3050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.81 грн |
| 47+ | 8.98 грн |
| 100+ | 6.99 грн |
| 500+ | 6.32 грн |
| 1000+ | 5.90 грн |
| NTJD5121NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Drain-source voltage: 60V
Drain current: 0.295A
Gate charge: 0.9nC
On-state resistance: 2.5Ω
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Drain-source voltage: 60V
Drain current: 0.295A
Gate charge: 0.9nC
On-state resistance: 2.5Ω
Gate-source voltage: ±20V
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| RB751S40T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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| NSVRB751S40T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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| NSVRB751S40T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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| SZ1SMB5929BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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| ESD5Z12T1G | ![]() |
![]() |
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Version: ESD
Max. forward impulse current: 9.6A
Peak pulse power dissipation: 240W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Version: ESD
Max. forward impulse current: 9.6A
Peak pulse power dissipation: 240W
на замовлення 4585 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.16 грн |
| 76+ | 5.49 грн |
| 90+ | 4.66 грн |
| 145+ | 2.88 грн |
| 177+ | 2.36 грн |
| 500+ | 1.68 грн |
| 1000+ | 1.53 грн |
| 1500+ | 1.46 грн |
| 3000+ | 1.45 грн |
| ESD5Z6.0T1G | ![]() |
![]() |
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Version: ESD
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 181W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Version: ESD
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 181W
на замовлення 1788 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.06 грн |
| 87+ | 4.82 грн |
| 129+ | 3.24 грн |
| 153+ | 2.73 грн |
| 250+ | 2.20 грн |
| 500+ | 1.90 грн |
| 1000+ | 1.65 грн |
| 1500+ | 1.55 грн |
| ESD5Z7.0T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Version: ESD
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 0.2kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Version: ESD
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 0.2kW
на замовлення 5975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.16 грн |
| 80+ | 5.24 грн |
| 100+ | 4.16 грн |
| 121+ | 3.46 грн |
| 145+ | 2.89 грн |
| 500+ | 1.96 грн |
| 1000+ | 1.72 грн |
| 1500+ | 1.66 грн |
| SZESD5Z12T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| SZESD5Z6.0T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.8V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.8V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| MBRS540T3G | ![]() |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 10A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 10A
Kind of package: reel; tape
на замовлення 1779 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.18 грн |
| 21+ | 19.96 грн |
| 23+ | 18.88 грн |
| 50+ | 17.05 грн |
| MJD32CG |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
на замовлення 152 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.59 грн |
| 15+ | 28.94 грн |
| 25+ | 26.45 грн |
| 75+ | 23.87 грн |
| MJD32CRLG |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| MJD32CT4G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD32CG |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
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| NJVMJD32CT4G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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од. на суму грн.


























