| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
1N5343BRLG | ONSEMI |
  Category: THT Zener diodesDescription: Diode: Zener; 5W; 7.5V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 7.5V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 2394 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
|
1N5344BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 738 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
|
1N5342BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 399 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
 |
1N5342BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 3950 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| 1N5344BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5347BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 10V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 10V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5341BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
MMBT2369ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector current: 0.2A Power dissipation: 0.225/0.3W Collector-emitter voltage: 15V Current gain: 40...120 Polarisation: bipolar Type of transistor: NPN |
на замовлення 2785 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
|
MMBT2369LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 20...120 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMMBT2369ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 +1 |
MC74HC1G14DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC Number of inputs: 1 |
на замовлення 3279 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
 |
MC74HC1G14DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC Number of inputs: 1 |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| MC74HC1G14DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC74A Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Kind of output: push-pull Quiescent current: 1µA Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Kind of output: push-pull Quiescent current: 1µA Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC74A Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Kind of output: push-pull Quiescent current: 1µA Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Kind of output: push-pull Quiescent current: 1µA Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2575D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
MC14503BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube Kind of package: tube Technology: CMOS Type of integrated circuit: digital Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of inputs: 1 Supply voltage: 3...18V DC Number of channels: 6 Kind of integrated circuit: 3-state; buffer; hex Kind of output: 3-state |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
 |
FCA36N60NF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 104.7A; 312W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 104.7A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FJV1845FMTF | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB Case: SOT23; TO236AB Type of transistor: NPN Mounting: SMD Collector current: 50mA Power dissipation: 0.3W Collector-emitter voltage: 120V Current gain: 300...600 Frequency: 50MHz Polarisation: bipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
HUF75639P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
на замовлення 123 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| NC7WZ02L8X-L22185 | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Case: DFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Drain current: -65A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 13mΩ Gate-source voltage: ±16V Power dissipation: 107W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCV274DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 2.4V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 1.5nA Input offset current: 0.2nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV4274CDT33RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; DPAK; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output current: 0.4A Application: automotive industry Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV4274CDT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output current: 0.4A Application: automotive industry Output voltage: 5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV4274ADT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output current: 0.4A Application: automotive industry Output voltage: 5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV33274ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 3.5mV Type of integrated circuit: operational amplifier Bandwidth: 24MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 10V/μs Input offset voltage: 3.5mV Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 80nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMS86310 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56 Type of transistor: N-MOSFET Case: Power56 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 95nC On-state resistance: 7.2mΩ Gate-source voltage: ±20V Drain current: 50A Drain-source voltage: 80V Power dissipation: 96W Pulsed drain current: 100A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
NSVR0170HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 0.64V Max. forward impulse current: 0.1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
RB751S40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| RB751S40T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVRB751S40T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVRB751S40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
M74VHC1GU04DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC Type of integrated circuit: digital Kind of integrated circuit: inverter Kind of gate: NOT Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC |
на замовлення 2886 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
|
MC74LCXU04DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: SOIC14 Family: LCXU Kind of integrated circuit: hex; inverter Integrated circuit features: tolerates a voltage of 5V on the inputs Kind of package: tube Operating temperature: -40...85°C Number of inputs: 1 Supply voltage: 1.5...3.6V DC Technology: CMOS |
на замовлення 258 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| MJD41CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJVMJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
MC100ELT25DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Manufacturer series: 100ELT Case: SO8 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Number of outputs: 1 Number of inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MC100ELT23DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 2 Manufacturer series: 100ELT Case: TSSOP8 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.75...5.25V DC Number of outputs: 2 Number of inputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
|
SBAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 36A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBR745G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Max. forward voltage: 0.57V Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm Max. load current: 7.5A Case: TO220AC Kind of package: tube |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| NSR201MXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Case: X2DFN2 Capacitance: 0.15pF Load current: 50mA Max. forward voltage: 0.32V Max. off-state voltage: 2V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCH190N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Case: TO247-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 60nC Power dissipation: 208W Pulsed drain current: 61.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVB190N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCP190N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 63nC Power dissipation: 208W Pulsed drain current: 61.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCP190N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 60nC Power dissipation: 208W Pulsed drain current: 61.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCP190N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 33nC Power dissipation: 144W Pulsed drain current: 42.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCP190N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 33nC Power dissipation: 144W Pulsed drain current: 42.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTB190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTP190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCPF190N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Case: TO220FP Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 63nC Power dissipation: 39W Pulsed drain current: 61.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCPF190N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Case: TO220FP Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.199Ω Gate charge: 57nC Power dissipation: 39W Pulsed drain current: 60.6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Case: TO247 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.165Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMT190N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Case: TDFN4 Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 31nC Power dissipation: 129W Pulsed drain current: 45A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMT190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: TDFN4 Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTPF190N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Case: TO220FP Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 31nC Power dissipation: 32W Pulsed drain current: 45A |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N5343BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 2394 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.65 грн |
| 18+ | 23.11 грн |
| 50+ | 18.04 грн |
| 100+ | 15.80 грн |
| 500+ | 12.47 грн |
| 1N5344BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 738 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.43 грн |
| 1N5342BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 399 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.76 грн |
| 19+ | 22.86 грн |
| 20+ | 21.03 грн |
| 50+ | 18.21 грн |
| 100+ | 16.21 грн |
| 250+ | 13.72 грн |
| 1N5342BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 3950 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.76 грн |
| 18+ | 24.11 грн |
| 19+ | 22.20 грн |
| 22+ | 19.45 грн |
| 50+ | 15.55 грн |
| 100+ | 12.97 грн |
| 200+ | 12.89 грн |
| 1N5344BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
товару немає в наявності
В кошику
од. на суму грн.
| 1N5347BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
товару немає в наявності
В кошику
од. на суму грн.
| 1N5341BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2369ALT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 15V
Current gain: 40...120
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 15V
Current gain: 40...120
Polarisation: bipolar
Type of transistor: NPN
на замовлення 2785 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.74 грн |
| 53+ | 7.90 грн |
| 78+ | 5.39 грн |
| 100+ | 4.51 грн |
| 500+ | 3.03 грн |
| 1000+ | 2.59 грн |
| MMBT2369LT1G | |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SMMBT2369ALT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G14DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Number of inputs: 1
на замовлення 3279 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.16 грн |
| 72+ | 5.82 грн |
| 100+ | 4.91 грн |
| 250+ | 4.42 грн |
| 500+ | 4.10 грн |
| 1000+ | 3.95 грн |
| 3000+ | 3.51 грн |
| MC74HC1G14DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Number of inputs: 1
на замовлення 15 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 27.44 грн |
| MC74HC1G14DBVT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G14DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G14DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G14DFT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G14DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
товару немає в наявності
В кошику
од. на суму грн.
| LM2575D2T-ADJR4G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MC14503BDG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 3...18V DC
Number of channels: 6
Kind of integrated circuit: 3-state; buffer; hex
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 3...18V DC
Number of channels: 6
Kind of integrated circuit: 3-state; buffer; hex
Kind of output: 3-state
на замовлення 9 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.14 грн |
| FCA36N60NF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 104.7A; 312W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 104.7A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 104.7A; 312W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 104.7A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FJV1845FMTF |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| HUF75639P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 123 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 182.65 грн |
| 10+ | 153.81 грн |
| 50+ | 108.91 грн |
| NC7WZ02L8X-L22185 |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
В кошику
од. на суму грн.
| FDWS9509L-F085 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NCV274DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 0.2nA
товару немає в наявності
В кошику
од. на суму грн.
| NCV4274CDT33RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 3.3V
товару немає в наявності
В кошику
од. на суму грн.
| NCV4274CDT50RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
товару немає в наявності
В кошику
од. на суму грн.
| NCV4274ADT50RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
товару немає в наявності
В кошику
од. на суму грн.
| NCV33274ADTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 10V/μs
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 10V/μs
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
товару немає в наявності
В кошику
од. на суму грн.
| FDMS86310 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NSVR0170HT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| RB751S40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 16 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 25.77 грн |
| RB751S40T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NSVRB751S40T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NSVRB751S40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| M74VHC1GU04DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: NOT
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Kind of gate: NOT
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
на замовлення 2886 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.97 грн |
| 20+ | 20.78 грн |
| 24+ | 17.88 грн |
| 27+ | 15.80 грн |
| 50+ | 12.14 грн |
| 100+ | 8.73 грн |
| 250+ | 8.15 грн |
| 500+ | 7.48 грн |
| 1000+ | 6.48 грн |
| MC74LCXU04DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Family: LCXU
Kind of integrated circuit: hex; inverter
Integrated circuit features: tolerates a voltage of 5V on the inputs
Kind of package: tube
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...3.6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Family: LCXU
Kind of integrated circuit: hex; inverter
Integrated circuit features: tolerates a voltage of 5V on the inputs
Kind of package: tube
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...3.6V DC
Technology: CMOS
на замовлення 258 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.26 грн |
| 11+ | 37.99 грн |
| 25+ | 29.68 грн |
| 55+ | 24.36 грн |
| 110+ | 23.03 грн |
| MJD41CRLG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
| MJD41CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
| NJVMJD41CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MC100ELT25DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Manufacturer series: 100ELT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of outputs: 1
Number of inputs: 2
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Manufacturer series: 100ELT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of outputs: 1
Number of inputs: 2
товару немає в наявності
В кошику
од. на суму грн.
| MC100ELT23DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Manufacturer series: 100ELT
Case: TSSOP8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of outputs: 2
Number of inputs: 4
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Manufacturer series: 100ELT
Case: TSSOP8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of outputs: 2
Number of inputs: 4
товару немає в наявності
В кошику
од. на суму грн.
| BAS16HT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
товару немає в наявності
В кошику
од. на суму грн.
| SBAS16HT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MBR745G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Case: TO220AC
Kind of package: tube
на замовлення 16 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.35 грн |
| 11+ | 40.49 грн |
| 12+ | 35.67 грн |
| NSR201MXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: X2DFN2
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: X2DFN2
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
товару немає в наявності
В кошику
од. на суму грн.
| FCH190N65F-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
товару немає в наявності
В кошику
од. на суму грн.
| NVB190N65S3F |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
товару немає в наявності
В кошику
од. на суму грн.
| FCP190N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 208W
Pulsed drain current: 61.8A
товару немає в наявності
В кошику
од. на суму грн.
| FCP190N65F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
товару немає в наявності
В кошику
од. на суму грн.
| FCP190N65S3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
товару немає в наявності
В кошику
од. на суму грн.
| FCP190N65S3R0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
товару немає в наявності
В кошику
од. на суму грн.
| NTB190N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
товару немає в наявності
В кошику
од. на суму грн.
| NTP190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
товару немає в наявності
В кошику
од. на суму грн.
| FCPF190N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 39W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 63nC
Power dissipation: 39W
Pulsed drain current: 61.8A
товару немає в наявності
В кошику
од. на суму грн.
| FCPF190N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.199Ω
Gate charge: 57nC
Power dissipation: 39W
Pulsed drain current: 60.6A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.199Ω
Gate charge: 57nC
Power dissipation: 39W
Pulsed drain current: 60.6A
товару немає в наявності
В кошику
од. на суму грн.
| NTHL190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
товару немає в наявності
В кошику
од. на суму грн.
| NTMT190N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
товару немає в наявності
В кошику
од. на суму грн.
| NTMT190N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
товару немає в наявності
В кошику
од. на суму грн.
| NTPF190N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
товару немає в наявності
В кошику
од. на суму грн.