| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| FSA2466UMX | ONSEMI |
 Category: Analog multiplexers and switchesDescription: IC: analog switch; switch; DPDT; Ch: 4; UMLP16; 1.65÷4.45V; 500nA Mounting: SMD Supply voltage: 1.65...4.45V Type of integrated circuit: analog switch Operating temperature: -40...85°C Resistance: 1.6Ω Quiescent current: 500nA Output configuration: DPDT Case: UMLP16 Kind of integrated circuit: switch Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14022BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B Operating temperature: -55...125°C Supply voltage: 3...18V DC Type of integrated circuit: digital Technology: CMOS Number of inputs: 3 Kind of package: reel; tape Case: SOIC16 Family: HEF4000B Kind of integrated circuit: counter; octal Number of channels: 1 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC1455BDR2G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC Type of integrated circuit: peripheral circuit Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape DC supply current: 10mA Output current: 0.2A Supply voltage: 4.5...16V DC Controlled voltage: 10V Kind of integrated circuit: astable; monostable; RC timer |
на замовлення 1849 шт: термін постачання 14-30 дні (днів) |
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| MC14555BDR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SOIC16; OUT: 4 Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Operating temperature: -55...125°C Quiescent current: 15nA Delay time: 70ns Number of outputs: 4 Number of channels: 2 Number of inputs: 1 Supply voltage: 3...18V Kind of integrated circuit: decoder; demultiplexer |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC14556BDR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; CMOS; SMD; SOIC16 Mounting: SMD Supply voltage: 3...18V Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Case: SOIC16 Number of outputs: 4 Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MURS360T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A Type of diode: rectifying Case: SMC Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1.28V Kind of package: reel; tape Reverse recovery time: 75ns Max. forward impulse current: 100A Features of semiconductor devices: ultrafast switching |
на замовлення 3766 шт: термін постачання 14-30 дні (днів) |
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MURS360BT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Case: SMB Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1.25V Kind of package: reel; tape Reverse recovery time: 75ns |
на замовлення 772 шт: термін постачання 14-30 дні (днів) |
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KSA928AYTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 1W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Collector current: 2A Collector-emitter voltage: 30V Current gain: 160...320 Frequency: 120MHz |
на замовлення 1888 шт: термін постачання 14-30 дні (днів) |
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MURS120T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 977 шт: термін постачання 14-30 дні (днів) |
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MURS260T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.45V Max. forward impulse current: 35A Kind of package: reel; tape |
на замовлення 1613 шт: термін постачання 14-30 дні (днів) |
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| MURS480ET3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A Type of diode: rectifying Case: SMC Mounting: SMD Max. off-state voltage: 0.8kV Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.53V Max. forward impulse current: 70A Kind of package: reel; tape Reverse recovery time: 100ns Features of semiconductor devices: ultrafast switching |
на замовлення 2498 шт: термін постачання 14-30 дні (днів) |
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MURS220T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.95V Kind of package: reel; tape |
на замовлення 2297 шт: термін постачання 14-30 дні (днів) |
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| TCA0372DWR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV Mounting: SMT Number of channels: dual; 2 Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SO16 Operating temperature: -40...125°C Input offset voltage: 1mV Slew rate: 1.4V/μs Voltage supply range: 5...40V DC Bandwidth: 1.4MHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| TCA0372DWR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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| DTA144TET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...250 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DTA144TM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...250 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DTA144WET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Current gain: 80...140 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDC3612 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2780 шт: термін постачання 14-30 дні (днів) |
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NDS332P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.74Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 5nC |
на замовлення 1633 шт: термін постачання 14-30 дні (днів) |
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MBR60H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.81V Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 60A Max. forward impulse current: 350A |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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MBR60L45CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.76V Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 60A Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR41H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.76V Kind of package: tube Max. load current: 40A Max. forward impulse current: 350A |
на замовлення 97 шт: термін постачання 14-30 дні (днів) |
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SS25 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS25FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5225B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 4874 шт: термін постачання 14-30 дні (днів) |
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1N5228BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 44990 шт: термін постачання 14-30 дні (днів) |
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| 1N5222B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.5V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5226BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5227B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5223B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5227BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5229BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FOD3125 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 60ns Turn-off time: 60ns Max. off-state voltage: 5V Output voltage: 0...35V Slew rate: 50kV/μs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| NTND31225CZTAG | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Case: XLLGA6 Power dissipation: 0.125W Polarisation: unipolar Drain current: 220/-127mA Kind of channel: enhancement Drain-source voltage: 20/-20V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 1.5/5Ω |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP45560IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: high Control voltage: 0.5...13.5V DC Output current: 17A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN12 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 6.8mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP45560IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: low Control voltage: 0.5...13.5V DC Output current: 17A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN12 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 6.8mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FQD2N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Polarisation: unipolar Drain current: 1.08A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: DPAK On-state resistance: 7.2Ω Mounting: SMD Pulsed drain current: 6.8A Power dissipation: 50W Gate charge: 15nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Drain current: 1.08A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: IPAK On-state resistance: 7.2Ω Mounting: THT Pulsed drain current: 6.8A Power dissipation: 50W Gate charge: 15nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Drain current: 1.08A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: IPAK On-state resistance: 7.2Ω Mounting: THT Pulsed drain current: 6.8A Power dissipation: 50W Gate charge: 15nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NGTB35N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector current: 35A Collector-emitter voltage: 650V Power dissipation: 150W Gate charge: 125nC |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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| LM7301SN1T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV Input offset voltage: 6mV Type of integrated circuit: operational amplifier Operating temperature: -40...85°C Integrated circuit features: low power; rail-to-rail Voltage supply range: 1.8...32V DC Kind of package: reel; tape Input offset current: 55nA Case: SOT23-5 Number of channels: single; 1 Bandwidth: 4MHz Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74VHC125MTCX | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Technology: CMOS Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -40...85°C Quiescent current: 40µA Kind of package: reel; tape Case: TSSOP14 Number of channels: 4 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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2SA2016-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 7A Power dissipation: 1.3W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 290MHz |
на замовлення 713 шт: термін постачання 14-30 дні (днів) |
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2SA2012-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89 Mounting: SMD Collector current: 5A Power dissipation: 3.5W Collector-emitter voltage: 30V Current gain: 200...560 Frequency: 350MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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2SA2040-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK Mounting: SMD Collector current: 8A Power dissipation: 1W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 330MHz Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
на замовлення 467 шт: термін постачання 14-30 дні (днів) |
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2SA2153-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89 Mounting: SMD Collector current: 2A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 420MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2013-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89 Mounting: SMD Collector current: 4A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 360MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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2SA2039-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK Mounting: SMD Collector current: 5A Power dissipation: 0.8W Collector-emitter voltage: 50V Current gain: 200...560 Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2125-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2125-TD-H | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2126-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK Mounting: SMD Collector current: 3A Power dissipation: 0.8W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2202-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89 Mounting: SMD Collector current: 2A Power dissipation: 1.3W Collector-emitter voltage: 100V Current gain: 200...400 Frequency: 300MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSV2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Application: automotive industry Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| N24C08UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NTR0202PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.4A Gate charge: 2.18nC Power dissipation: 0.225W On-state resistance: 0.55Ω Gate-source voltage: ±20V Kind of package: reel; tape |
на замовлення 576 шт: термін постачання 14-30 дні (днів) |
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MJD31CG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz |
на замовлення 678 шт: термін постачання 14-30 дні (днів) |
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MJD31CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
на замовлення 829 шт: термін постачання 14-30 дні (днів) |
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MJD31CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NJVMJD31CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| FSA2466UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; switch; DPDT; Ch: 4; UMLP16; 1.65÷4.45V; 500nA
Mounting: SMD
Supply voltage: 1.65...4.45V
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 1.6Ω
Quiescent current: 500nA
Output configuration: DPDT
Case: UMLP16
Kind of integrated circuit: switch
Number of channels: 4
Category: Analog multiplexers and switches
Description: IC: analog switch; switch; DPDT; Ch: 4; UMLP16; 1.65÷4.45V; 500nA
Mounting: SMD
Supply voltage: 1.65...4.45V
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 1.6Ω
Quiescent current: 500nA
Output configuration: DPDT
Case: UMLP16
Kind of integrated circuit: switch
Number of channels: 4
товару немає в наявності
В кошику
од. на суму грн.
| MC14022BDR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: counter; octal
Number of channels: 1
Mounting: SMD
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: counter; octal
Number of channels: 1
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC1455BDR2G |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
DC supply current: 10mA
Output current: 0.2A
Supply voltage: 4.5...16V DC
Controlled voltage: 10V
Kind of integrated circuit: astable; monostable; RC timer
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
DC supply current: 10mA
Output current: 0.2A
Supply voltage: 4.5...16V DC
Controlled voltage: 10V
Kind of integrated circuit: astable; monostable; RC timer
на замовлення 1849 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.16 грн |
| 17+ | 25.12 грн |
| 100+ | 19.27 грн |
| MC14555BDR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SOIC16; OUT: 4
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 15nA
Delay time: 70ns
Number of outputs: 4
Number of channels: 2
Number of inputs: 1
Supply voltage: 3...18V
Kind of integrated circuit: decoder; demultiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SOIC16; OUT: 4
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 15nA
Delay time: 70ns
Number of outputs: 4
Number of channels: 2
Number of inputs: 1
Supply voltage: 3...18V
Kind of integrated circuit: decoder; demultiplexer
товару немає в наявності
В кошику
од. на суму грн.
| MC14556BDR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; CMOS; SMD; SOIC16
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Case: SOIC16
Number of outputs: 4
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; CMOS; SMD; SOIC16
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Case: SOIC16
Number of outputs: 4
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
товару немає в наявності
В кошику
од. на суму грн.
| MURS360T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.28V
Kind of package: reel; tape
Reverse recovery time: 75ns
Max. forward impulse current: 100A
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.28V
Kind of package: reel; tape
Reverse recovery time: 75ns
Max. forward impulse current: 100A
Features of semiconductor devices: ultrafast switching
на замовлення 3766 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.17 грн |
| 24+ | 17.30 грн |
| 26+ | 15.90 грн |
| 50+ | 13.26 грн |
| 100+ | 12.60 грн |
| 250+ | 11.86 грн |
| 500+ | 11.45 грн |
| 1000+ | 11.04 грн |
| 2500+ | 10.54 грн |
| MURS360BT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Kind of package: reel; tape
Reverse recovery time: 75ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Kind of package: reel; tape
Reverse recovery time: 75ns
на замовлення 772 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.69 грн |
| 14+ | 29.65 грн |
| 17+ | 24.54 грн |
| 25+ | 19.19 грн |
| 50+ | 16.88 грн |
| 100+ | 16.31 грн |
| 250+ | 15.65 грн |
| KSA928AYTA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
на замовлення 1888 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.17 грн |
| 26+ | 16.14 грн |
| 31+ | 13.67 грн |
| 100+ | 11.69 грн |
| MURS120T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 977 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.70 грн |
| 17+ | 24.54 грн |
| 20+ | 21.25 грн |
| 50+ | 15.24 грн |
| 100+ | 13.34 грн |
| 500+ | 10.05 грн |
| MURS260T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.45V
Max. forward impulse current: 35A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.45V
Max. forward impulse current: 35A
Kind of package: reel; tape
на замовлення 1613 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 15.96 грн |
| 31+ | 13.51 грн |
| 50+ | 12.85 грн |
| MURS480ET3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
на замовлення 2498 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.28 грн |
| 8+ | 56.00 грн |
| 10+ | 52.71 грн |
| 50+ | 49.41 грн |
| 100+ | 47.77 грн |
| MURS220T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
на замовлення 2297 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.02 грн |
| 17+ | 25.53 грн |
| 20+ | 21.58 грн |
| 50+ | 14.82 грн |
| 100+ | 12.77 грн |
| 250+ | 10.46 грн |
| 500+ | 9.14 грн |
| 1000+ | 7.91 грн |
| TCA0372DWR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV
Mounting: SMT
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO16
Operating temperature: -40...125°C
Input offset voltage: 1mV
Slew rate: 1.4V/μs
Voltage supply range: 5...40V DC
Bandwidth: 1.4MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV
Mounting: SMT
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO16
Operating temperature: -40...125°C
Input offset voltage: 1mV
Slew rate: 1.4V/μs
Voltage supply range: 5...40V DC
Bandwidth: 1.4MHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TCA0372DWR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 91.35 грн |
| DTA144TET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| DTA144TM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| DTA144WET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
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| FDC3612 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2780 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.22 грн |
| 12+ | 35.91 грн |
| 14+ | 30.23 грн |
| 50+ | 21.41 грн |
| 100+ | 19.60 грн |
| 500+ | 19.35 грн |
| NDS332P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
на замовлення 1633 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 49.67 грн |
| 14+ | 31.38 грн |
| 50+ | 21.66 грн |
| 100+ | 18.53 грн |
| 500+ | 13.51 грн |
| 1000+ | 11.94 грн |
| 1500+ | 11.45 грн |
| MBR60H100CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward impulse current: 350A
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.48 грн |
| 10+ | 128.48 грн |
| MBR60L45CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward impulse current: 200A
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| MBR41H100CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 138.36 грн |
| 10+ | 105.42 грн |
| 50+ | 104.59 грн |
| SS25 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| SS25FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| 1N5225B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 4874 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.43 грн |
| 139+ | 2.96 грн |
| 162+ | 2.55 грн |
| 249+ | 1.66 грн |
| 275+ | 1.50 грн |
| 500+ | 1.40 грн |
| 1000+ | 1.32 грн |
| 2500+ | 1.27 грн |
| 1N5228BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 44990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.87 грн |
| 68+ | 6.09 грн |
| 88+ | 4.69 грн |
| 217+ | 1.90 грн |
| 261+ | 1.58 грн |
| 500+ | 1.35 грн |
| 1000+ | 1.30 грн |
| 1N5222B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5226BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5227B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5223B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5227BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5229BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| FOD3125 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
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Мінімальне замовлення: 1000 шт
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| NTND31225CZTAG |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
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Мінімальне замовлення: 8000 шт
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| NCP45560IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
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| NCP45560IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
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| FQD2N90TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 7.2Ω
Mounting: SMD
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 7.2Ω
Mounting: SMD
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
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Мінімальне замовлення: 2500 шт
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| FQU2N90TU-AM002 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
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| FQU2N90TU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
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| NGTB35N65FL2WG |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 35A
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 125nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 35A
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 125nC
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 434.60 грн |
| 10+ | 327.78 грн |
| 20+ | 274.25 грн |
| LM7301SN1T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Input offset voltage: 6mV
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Voltage supply range: 1.8...32V DC
Kind of package: reel; tape
Input offset current: 55nA
Case: SOT23-5
Number of channels: single; 1
Bandwidth: 4MHz
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Input offset voltage: 6mV
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Voltage supply range: 1.8...32V DC
Kind of package: reel; tape
Input offset current: 55nA
Case: SOT23-5
Number of channels: single; 1
Bandwidth: 4MHz
Mounting: SMT
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| 74VHC125MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSSOP14
Number of channels: 4
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSSOP14
Number of channels: 4
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SA2016-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 290MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 290MHz
на замовлення 713 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.82 грн |
| 10+ | 47.44 грн |
| 50+ | 35.41 грн |
| 100+ | 31.38 грн |
| 200+ | 30.88 грн |
| 2SA2012-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector current: 5A
Power dissipation: 3.5W
Collector-emitter voltage: 30V
Current gain: 200...560
Frequency: 350MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector current: 5A
Power dissipation: 3.5W
Collector-emitter voltage: 30V
Current gain: 200...560
Frequency: 350MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.89 грн |
| 2SA2040-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Collector current: 8A
Power dissipation: 1W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 330MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Collector current: 8A
Power dissipation: 1W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 330MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
на замовлення 467 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 89.58 грн |
| 10+ | 52.87 грн |
| 100+ | 37.88 грн |
| 2SA2153-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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од. на суму грн.
| 2SA2013-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 2SA2029M3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| 2SA2039-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 2SA2125-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 2SA2125-TD-H |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 2SA2126-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 2SA2202-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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В кошику
од. на суму грн.
| NSV2SA2029M3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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од. на суму грн.
| N24C08UVTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTR0202PLT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
на замовлення 576 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.76 грн |
| 63+ | 6.59 грн |
| 83+ | 5.01 грн |
| 100+ | 4.55 грн |
| 250+ | 4.17 грн |
| 500+ | 3.92 грн |
| MJD31CG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
на замовлення 678 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 89.58 грн |
| 10+ | 57.90 грн |
| 75+ | 31.05 грн |
| MJD31CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
на замовлення 829 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.31 грн |
| 12+ | 36.16 грн |
| 20+ | 30.06 грн |
| 50+ | 23.88 грн |
| 100+ | 20.42 грн |
| 200+ | 17.95 грн |
| 500+ | 15.98 грн |
| MJD31CRLG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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од. на суму грн.
| NJVMJD31CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.