| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| MC74HC165AMN2TWG | ONSEMI |
 Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9 Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: QFN16 Family: HC Supply voltage: 2...6V Trigger: positive-edge-triggered Number of inputs: 9 Number of outputs: 1 Number of channels: 1 Kind of output: complementary; push-pull Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC74HC165AMN2TWG-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: QFN16 Supply voltage: 4.5...5.5V Number of inputs: 9 Delay time: 225ns Kind of output: complementary Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDS3590 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 Mounting: SMD Polarisation: unipolar Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 86mΩ Power dissipation: 2.5W |
на замовлення 304 шт: термін постачання 14-30 дні (днів) |
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KSC2383YTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 160...320 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 1894 шт: термін постачання 14-30 дні (днів) |
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KSC2383OTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 1068 шт: термін постачання 14-30 дні (днів) |
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FDMS86101 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDMS86101A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDMS86101DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2989 шт: термін постачання 14-30 дні (днів) |
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MC14021BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous Number of channels: 1 Technology: CMOS Mounting: SMD Case: SO16 Family: HEF4000B Quiescent current: 600µA Kind of package: reel; tape Supply voltage: 3...18V DC Operating temperature: -55...125°C |
на замовлення 8813 шт: термін постачання 14-30 дні (днів) |
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MC14049BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Technology: CMOS Kind of package: tube Case: SO16 Kind of integrated circuit: buffer; inverting Number of channels: 6 |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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MC14082BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of gate: AND Type of integrated circuit: digital Technology: CMOS Number of inputs: 4 Kind of package: tube Case: SO14 Family: HEF4000B Number of channels: dual; 2 Delay time: 130ns Mounting: SMD |
на замовлення 296 шт: термін постачання 14-30 дні (днів) |
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MC14025BDG | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: SO14 Family: HEF4000B Technology: CMOS Kind of package: tube Delay time: 130ns Supply voltage: 3...18V DC Operating temperature: -55...125°C |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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MC14013BDTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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MC74ACT74DG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Trigger: positive-edge-triggered |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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MC74ACT74DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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ES2D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 18pF |
на замовлення 1892 шт: термін постачання 14-30 дні (днів) |
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| ES2DAF | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.95V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74HC164ADR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: parallel in Mounting: SMD Case: SOIC14 Family: HC Number of inputs: 2 Number of channels: 1 Delay time: 250ns Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC164ADTR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: TSSOP14 Family: HC Trigger: positive-edge-triggered Number of inputs: 2 Number of outputs: 8 Number of channels: 1 Delay time: 250ns Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC164BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: SOIC14 Family: HC Trigger: positive-edge-triggered Number of inputs: 2 Number of outputs: 8 Number of channels: 1 Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQP9N90C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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FQPF9N90CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A |
на замовлення 947 шт: термін постачання 14-30 дні (днів) |
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| TL331SN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TL331VSN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TL331SN4T1G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBR0530 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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BD13810STU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 63...160 Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
| BD138G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MOC3163M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6 Case: DIP6 Number of channels: 1 Mounting: THT Slew rate: 1kV/μs Kind of output: zero voltage crossing driver Insulation voltage: 4.17kV Type of optocoupler: optotriac Output voltage: 600V Trigger current: 5mA Manufacturer series: MOC3163M |
на замовлення 992 шт: термін постачання 14-30 дні (днів) |
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MB2S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 52 шт: термін постачання 14-30 дні (днів) |
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LM301ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape Type of integrated circuit: operational amplifier Number of channels: single; 1 Mounting: SMT Voltage supply range: ± 5...15V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 10V/μs Input offset voltage: 7.5mV Input bias current: 0.25µA Input offset current: 50nA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FSB50450US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Mounting: SMD Type of integrated circuit: driver Power dissipation: 14W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 500V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||
| FSB50250AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W Mounting: SMD Output current: 1.2A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 13.4W Operating temperature: -40...150°C Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 500V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||
| FSB50250US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Mounting: SMD Type of integrated circuit: driver Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: PowerSMD Operating voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FSB50450AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W Mounting: SMD Output current: 1.5A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14W Operating temperature: -40...150°C Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 500V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||
| FSB50825AB | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV Mounting: THT Supply voltage: 150V Output current: 3.6A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14.2W Operating temperature: -40...150°C Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: DIP Operating voltage: 250V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FSB50825AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W Mounting: SMD Supply voltage: 150V Output current: 3.6A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14.2W Operating temperature: -40...150°C Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 250V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||
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FDD6637 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -35V Drain current: -55A Power dissipation: 57W Case: DPAK Gate-source voltage: ±25V On-state resistance: 19mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2301 шт: термін постачання 14-30 дні (днів) |
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| NTLJS2103PTBG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6 Mounting: SMD Case: WDFN6 Power dissipation: 3.3W Kind of package: reel; tape Pulsed drain current: -24A Gate charge: 12.8nC Polarisation: unipolar Drain current: -7.7A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 25mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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MC74HC04ADR2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA Type of integrated circuit: digital Number of channels: 6 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V Family: HC Kind of integrated circuit: inverter Kind of output: push-pull Operating temperature: -55...125°C Quiescent current: 2µA Number of inputs: 6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape Case: TSOP6 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Semiconductor structure: unidirectional Type of diode: TVS array Version: ESD |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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| SNUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP59301DS30R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1 Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 3V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP59301DS28R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 2.8V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220 On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Reverse recovery time: 200ns Technology: PowerTrench® Gate-source voltage: 20V Semiconductor structure: single transistor |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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| MC33067PG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Mounting: THT Case: DIP16 Operating temperature: -40...85°C Output voltage: 5...5.2V Input voltage: 20V Frequency: 1MHz Topology: flyback Manufacturer series: MC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1SMB5924BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
на замовлення 2367 шт: термін постачання 14-30 дні (днів) |
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MMSZ5239BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; single diode; reel,tape Mounting: SMD Tolerance: ±5% Manufacturer series: MMSZ52xxB Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 9.1V Type of diode: Zener |
на замовлення 138 шт: термін постачання 14-30 дні (днів) |
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1N5239BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MUR8100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns Max. off-state voltage: 1kV Max. load current: 16A Load current: 8A Case: TO220AC Mounting: THT Kind of package: tube Max. forward impulse current: 100A Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 100ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.5V Features of semiconductor devices: ultrafast switching |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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FDMS3660S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±12V On-state resistance: 11/2.6mΩ Mounting: SMD Gate charge: 29/87nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2578 шт: термін постачання 14-30 дні (днів) |
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FDMS3664S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2937 шт: термін постачання 14-30 дні (днів) |
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FDMS86163P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8 Mounting: SMD Power dissipation: 104W Gate charge: 59nC Polarisation: unipolar Technology: PowerTrench® Drain current: -50A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±25V Kind of package: reel; tape Case: PQFN8 On-state resistance: 36mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS8460 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 2994 шт: термін постачання 14-30 дні (днів) |
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FDMS86252L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 12A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2419 шт: термін постачання 14-30 дні (днів) |
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FDMS8333L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Mounting: SMD Pulsed drain current: 250A Power dissipation: 69W Gate charge: 64nC Polarisation: unipolar Drain current: 76A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 4.7mΩ |
на замовлення 2972 шт: термін постачання 14-30 дні (днів) |
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FDMS86520L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 60A Power dissipation: 69W Gate charge: 63nC Polarisation: unipolar Drain current: 22A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: Power56 On-state resistance: 11.8mΩ |
на замовлення 2922 шт: термін постачання 14-30 дні (днів) |
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FDMS86200 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 36A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 27A Power dissipation: 78W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 103mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| MC74HC165AMN2TWG |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC165AMN2TWG-Q |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Supply voltage: 4.5...5.5V
Number of inputs: 9
Delay time: 225ns
Kind of output: complementary
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Supply voltage: 4.5...5.5V
Number of inputs: 9
Delay time: 225ns
Kind of output: complementary
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
| FDS3590 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 86mΩ
Power dissipation: 2.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 86mΩ
Power dissipation: 2.5W
на замовлення 304 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.78 грн |
| 10+ | 60.45 грн |
| 25+ | 54.00 грн |
| 50+ | 49.41 грн |
| 100+ | 45.08 грн |
| KSC2383YTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 1894 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.57 грн |
| 18+ | 24.28 грн |
| 20+ | 21.57 грн |
| 50+ | 16.81 грн |
| 92+ | 10.61 грн |
| 252+ | 10.02 грн |
| 1000+ | 9.68 грн |
| KSC2383OTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 1068 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.54 грн |
| 13+ | 34.13 грн |
| 15+ | 29.29 грн |
| 25+ | 23.69 грн |
| 50+ | 20.21 грн |
| 81+ | 12.14 грн |
| 221+ | 11.46 грн |
| FDMS86101 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
товару немає в наявності
В кошику
од. на суму грн.
| FDMS86101A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDMS86101DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2989 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 400.47 грн |
| 5+ | 210.56 грн |
| 13+ | 198.67 грн |
| 50+ | 192.73 грн |
| 100+ | 191.03 грн |
| MC14021BDR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Quiescent current: 600µA
Kind of package: reel; tape
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Quiescent current: 600µA
Kind of package: reel; tape
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
на замовлення 8813 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.57 грн |
| 18+ | 24.71 грн |
| 25+ | 20.72 грн |
| 93+ | 10.53 грн |
| 254+ | 9.93 грн |
| MC14049BDG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.97 грн |
| 13+ | 33.45 грн |
| 15+ | 29.04 грн |
| 25+ | 24.20 грн |
| 47+ | 20.55 грн |
| 130+ | 19.44 грн |
| MC14082BDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 4
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: dual; 2
Delay time: 130ns
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 4
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: dual; 2
Delay time: 130ns
Mounting: SMD
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.77 грн |
| 23+ | 18.59 грн |
| 26+ | 16.64 грн |
| 55+ | 15.20 грн |
| 75+ | 12.99 грн |
| 205+ | 12.31 грн |
| MC14025BDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Family: HEF4000B
Technology: CMOS
Kind of package: tube
Delay time: 130ns
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Family: HEF4000B
Technology: CMOS
Kind of package: tube
Delay time: 130ns
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.57 грн |
| 19+ | 23.26 грн |
| MC14013BDTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74ACT74DG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Trigger: positive-edge-triggered
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.57 грн |
| 19+ | 23.52 грн |
| MC74ACT74DTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| ES2D |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 18pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 18pF
на замовлення 1892 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.89 грн |
| 14+ | 31.24 грн |
| 16+ | 27.08 грн |
| 50+ | 19.70 грн |
| 82+ | 11.80 грн |
| 225+ | 11.12 грн |
| ES2DAF |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| MC74HC164ADR2G-Q |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Number of inputs: 2
Number of channels: 1
Delay time: 250ns
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Number of inputs: 2
Number of channels: 1
Delay time: 250ns
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
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| MC74HC164ADTR2G-Q |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Number of channels: 1
Delay time: 250ns
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Number of channels: 1
Delay time: 250ns
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
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| MC74HC164BDR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Number of channels: 1
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Number of channels: 1
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
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| FQP9N90C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 341.96 грн |
| 5+ | 193.58 грн |
| 14+ | 183.39 грн |
| FQPF9N90CT |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
на замовлення 947 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 352.93 грн |
| 5+ | 205.46 грн |
| 13+ | 194.42 грн |
| TL331SN4T3G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331VSN4T3G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331SN4T1G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| MBR0530 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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Мінімальне замовлення: 10 шт
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| BD13810STU |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
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Мінімальне замовлення: 3 шт
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| BD138G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
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| MOC3163M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Output voltage: 600V
Trigger current: 5mA
Manufacturer series: MOC3163M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Output voltage: 600V
Trigger current: 5mA
Manufacturer series: MOC3163M
на замовлення 992 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.17 грн |
| 10+ | 48.05 грн |
| 25+ | 44.74 грн |
| 50+ | 42.62 грн |
| 100+ | 40.67 грн |
| 500+ | 36.08 грн |
| 750+ | 34.89 грн |
| MB2S |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.72 грн |
| 16+ | 27.00 грн |
| 25+ | 22.24 грн |
| 50+ | 19.27 грн |
| LM301ADR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 10V/μs
Input offset voltage: 7.5mV
Input bias current: 0.25µA
Input offset current: 50nA
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 10V/μs
Input offset voltage: 7.5mV
Input bias current: 0.25µA
Input offset current: 50nA
Kind of package: reel; tape
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| FSB50450US |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Type of integrated circuit: driver
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Type of integrated circuit: driver
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
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Мінімальне замовлення: 450 шт
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| FSB50250AS |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Mounting: SMD
Output current: 1.2A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 13.4W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Mounting: SMD
Output current: 1.2A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 13.4W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
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Мінімальне замовлення: 450 шт
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| FSB50250US |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: PowerSMD
Operating voltage: 500V
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: PowerSMD
Operating voltage: 500V
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| FSB50450AS |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Mounting: SMD
Output current: 1.5A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Mounting: SMD
Output current: 1.5A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
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Мінімальне замовлення: 450 шт
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| FSB50825AB |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Mounting: THT
Supply voltage: 150V
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: DIP
Operating voltage: 250V
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Mounting: THT
Supply voltage: 150V
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: DIP
Operating voltage: 250V
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| FSB50825AS |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Mounting: SMD
Supply voltage: 150V
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 250V
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Mounting: SMD
Supply voltage: 150V
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 250V
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Мінімальне замовлення: 450 шт
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| FDD6637 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -35V
Drain current: -55A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -35V
Drain current: -55A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2301 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.69 грн |
| 5+ | 107.83 грн |
| 10+ | 94.24 грн |
| 50+ | 69.62 грн |
| 100+ | 63.68 грн |
| NTLJS2103PTBG |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Mounting: SMD
Case: WDFN6
Power dissipation: 3.3W
Kind of package: reel; tape
Pulsed drain current: -24A
Gate charge: 12.8nC
Polarisation: unipolar
Drain current: -7.7A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Mounting: SMD
Case: WDFN6
Power dissipation: 3.3W
Kind of package: reel; tape
Pulsed drain current: -24A
Gate charge: 12.8nC
Polarisation: unipolar
Drain current: -7.7A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 25mΩ
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Мінімальне замовлення: 3000 шт
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| MC74HC04ADR2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V
Family: HC
Kind of integrated circuit: inverter
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V
Family: HC
Kind of integrated circuit: inverter
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
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| NUP2114UCMR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS array
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS array
Version: ESD
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 58.52 грн |
| 12+ | 38.38 грн |
| 14+ | 32.52 грн |
| SNUP2114UCMR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
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| NCP59301DS30R4G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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| NCP59301DS28R4G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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| BUZ11-NR4941 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 112.46 грн |
| 6+ | 80.83 грн |
| 10+ | 70.04 грн |
| BUZ11-NR4941 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: PowerTrench®
Gate-source voltage: 20V
Semiconductor structure: single transistor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: PowerTrench®
Gate-source voltage: 20V
Semiconductor structure: single transistor
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.40 грн |
| 6+ | 78.45 грн |
| 10+ | 69.79 грн |
| MC33067PG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Mounting: THT
Case: DIP16
Operating temperature: -40...85°C
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Topology: flyback
Manufacturer series: MC
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Mounting: THT
Case: DIP16
Operating temperature: -40...85°C
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Topology: flyback
Manufacturer series: MC
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| 1SMB5924BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
на замовлення 2367 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.06 грн |
| 15+ | 28.87 грн |
| 17+ | 25.47 грн |
| 50+ | 18.76 грн |
| 100+ | 16.22 грн |
| 107+ | 9.08 грн |
| 294+ | 8.58 грн |
| MMSZ5239BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MMSZ52xxB
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 9.1V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MMSZ52xxB
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 9.1V
Type of diode: Zener
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.89 грн |
| 81+ | 5.26 грн |
| 88+ | 4.84 грн |
| 109+ | 3.91 грн |
| 1N5239BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| MUR8100EG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Max. off-state voltage: 1kV
Max. load current: 16A
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 100ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Max. off-state voltage: 1kV
Max. load current: 16A
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 100ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Features of semiconductor devices: ultrafast switching
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 134.41 грн |
| 10+ | 82.35 грн |
| 50+ | 71.32 грн |
| FDMS3660S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2578 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.58 грн |
| 10+ | 107.83 грн |
| 25+ | 93.39 грн |
| 100+ | 84.90 грн |
| FDMS3664S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2937 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.43 грн |
| 10+ | 70.47 грн |
| 25+ | 62.83 грн |
| 100+ | 53.49 грн |
| FDMS86163P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Mounting: SMD
Power dissipation: 104W
Gate charge: 59nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 36mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Mounting: SMD
Power dissipation: 104W
Gate charge: 59nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 36mΩ
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од. на суму грн.
| FDMS8460 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2994 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 140.81 грн |
| 5+ | 108.67 грн |
| FDMS86252L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2419 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 205.72 грн |
| 5+ | 152.82 грн |
| 10+ | 134.14 грн |
| 50+ | 100.18 грн |
| 100+ | 89.15 грн |
| 250+ | 83.20 грн |
| FDMS8333L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 69W
Gate charge: 64nC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 69W
Gate charge: 64nC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4.7mΩ
на замовлення 2972 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.43 грн |
| 9+ | 50.09 грн |
| 25+ | 39.90 грн |
| 68+ | 37.36 грн |
| FDMS86520L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 69W
Gate charge: 63nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power56
On-state resistance: 11.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 69W
Gate charge: 63nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power56
On-state resistance: 11.8mΩ
на замовлення 2922 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.61 грн |
| 5+ | 117.16 грн |
| 10+ | 104.43 грн |
| 25+ | 89.15 грн |
| 100+ | 81.51 грн |
| FDMS86200 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
товару немає в наявності
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од. на суму грн.
| FDMS2572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.