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NCP51400MNTXG ONSEMI NCP51400.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51401MNTXG ONSEMI NCP51401.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51402MNTXG ONSEMI NCP51402.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51403MNTXG ONSEMI NCP51403.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51510MNTAG ONSEMI NCP51510.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Operating voltage: 1.1...3.6/2.7...3.6V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCV51400MWTXG ONSEMI NCP51400.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51145MNTAG NCP51145MNTAG ONSEMI NCP51145.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: 0.6...2.5V DC
Output current: 1.8A
Operating voltage: 1...5.5/4.75...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN8
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NCV51190MNTAG NCV51190MNTAG ONSEMI NCP51190.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.675...1.35V
Output current: 1.5A
Operating voltage: 1.35...2.5/2.2...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN8
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NCV51200MNTXG ONSEMI NCP51200.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCV51200MWTXG ONSEMI NCP51200.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCV51400MNTXG ONSEMI NCP51400.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCV51510MNTAG ONSEMI NCP51510.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Operating voltage: 1.1...3.6/2.7...3.6V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51198PDR2G ONSEMI NCP51198.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.675...1.35V
Output current: 1.5A
Operating voltage: 1.35...2.5/2.2...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NCP51199PDR2G ONSEMI NCP51199.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 125°C
Output voltage: 0.75...2.5V
Output current: 2A
Operating voltage: 1.5...5.5/4.75...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NCP51145PDR2G ONSEMI NCP51145.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: 0.6...2.5V DC
Output current: 1.8A
Operating voltage: 1...5.5/4.75...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NCV51198PDR2G ONSEMI NCP51198.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.675...1.35V
Output current: 1.5A
Operating voltage: 1.35...2.5/2.2...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NCV51199PDR2G ONSEMI NCP51199.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 125°C
Output voltage: 0.75...2.5V
Output current: 2A
Operating voltage: 1.5...5.5/4.75...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NSS30071MR6T1G ONSEMI nss30071mr6t1g.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.7A; 0.342W; SC74-6
Kind of package: reel; tape
Type of transistor: NPN
Case: SC74-6
Mounting: SMD
Power dissipation: 0.342W
Collector current: 0.7A
Collector-emitter voltage: 30V
Application: automotive industry
Polarisation: bipolar
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MBRD340T4G MBRD340T4G ONSEMI MBRD3x0.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.45V
Load current: 3A
Max. load current: 6A
Max. off-state voltage: 40V
Case: DPAK
на замовлення 1959 шт:
термін постачання 14-30 дні (днів)
10+48.35 грн
11+39.74 грн
12+37.33 грн
50+31.68 грн
100+29.27 грн
250+26.60 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MJD340T4G ONSEMI mjd340-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Case: DPAK
Polarisation: bipolar
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MJD340RLG ONSEMI mjd340-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Case: DPAK
Polarisation: bipolar
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NJVMJD340T4G ONSEMI mjd340-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Application: automotive industry
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Case: DPAK
Polarisation: bipolar
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FDMC86260ET150 ONSEMI fdmc86260et150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 69mΩ
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 65W
Pulsed drain current: 116A
Drain-source voltage: 150V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
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BD681S BD681S ONSEMI BD675A-677A-679a-681.pdf BD681S.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 4A; 40W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO126ISO
Mounting: THT
Kind of package: bulk
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BD681S BD681S ONSEMI BD675-D.PDF FAIRS18550-1.pdf?t.download=true&u=5oefqw Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 4A; 40W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO126ISO
Mounting: THT
Kind of package: bulk
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MJE5742G MJE5742G ONSEMI MJE5742G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 400V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 578 шт:
термін постачання 14-30 дні (днів)
3+154.90 грн
4+116.40 грн
10+74.83 грн
Мінімальне замовлення: 3
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NV25320DWHFT3G ONSEMI NV25080-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Memory organisation: 4kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: SOIC8
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 32kb EEPROM
Clock frequency: 10MHz
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S1MFL S1MFL ONSEMI S1xFL.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: SOD123F
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 4pF
Reverse recovery time: 2µs
на замовлення 1127 шт:
термін постачання 14-30 дні (днів)
30+15.22 грн
41+10.23 грн
50+8.43 грн
100+7.67 грн
500+5.93 грн
1000+5.19 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
MRA4003T3G MRA4003T3G ONSEMI MRA4006T3G-DTE.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 4147 шт:
термін постачання 14-30 дні (днів)
20+23.28 грн
29+14.80 грн
50+10.79 грн
100+9.25 грн
250+7.37 грн
500+6.04 грн
1000+4.79 грн
2000+4.16 грн
Мінімальне замовлення: 20
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FAN6300AMY ONSEMI FAN6300.PDF Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; PWM controller; SO8; flyback; reel,tape; 8÷25VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 8...25V DC
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NVVR26A120M1WST ONSEMI nvvr26a120m1wst-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 400A
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Electrical mounting: screw; THT
On-state resistance: 4.6mΩ
Power dissipation: 1kW
Technology: SiC
Gate-source voltage: -10...25V
Kind of package: tube
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NVVR26A120M1WSB ONSEMI nvvr26a120m1wsb-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 400A
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Electrical mounting: screw; THT
On-state resistance: 4.6mΩ
Power dissipation: 1kW
Technology: SiC
Gate-source voltage: -10...25V
Kind of package: tube
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NVVR26A120M1WSS ONSEMI nvvr26a120m1wss-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 400A
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Electrical mounting: screw; THT
On-state resistance: 4.6mΩ
Power dissipation: 1kW
Technology: SiC
Gate-source voltage: -10...25V
Kind of package: tube
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S1M S1M ONSEMI S1A.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.4W
Capacitance: 6.6pF
на замовлення 4571 шт:
термін постачання 14-30 дні (днів)
34+13.43 грн
42+9.98 грн
49+8.65 грн
100+6.88 грн
500+5.23 грн
1000+4.61 грн
2000+4.07 грн
Мінімальне замовлення: 34
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SZBZX84C2V7ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C2V7LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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LM317LZ LM317LZ ONSEMI lm317lz_fai.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
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74LCX125MTCX 74LCX125MTCX ONSEMI 74LCX125M.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
на замовлення 945 шт:
термін постачання 14-30 дні (днів)
25+17.91 грн
27+15.46 грн
30+14.22 грн
35+12.06 грн
100+11.06 грн
Мінімальне замовлення: 25
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74LCX125MTC 74LCX125MTC ONSEMI 74LCX125M.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Quiescent current: 10µA
Kind of output: 3-state
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
22+20.59 грн
34+12.47 грн
38+10.97 грн
50+10.89 грн
Мінімальне замовлення: 22
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74LCX126MTCX 74LCX126MTCX ONSEMI 74LCX126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LCX
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Technology: CMOS
Kind of output: 3-state
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
20+23.28 грн
30+14.30 грн
33+12.80 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
NCL30186BDR2G ONSEMI ncl30186-d.pdf Category: LED drivers
Description: IC: driver; boost,buck,buck-boost,flyback,SEPIC; SOP10; 200V
Type of integrated circuit: driver
Topology: boost; buck; buck-boost; flyback; SEPIC
Case: SOP10
Output voltage: 200V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Application: lighting
Input voltage: 9.4...26V
Frequency: 150kHz
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MBRD1035CTLT4G MBRD1035CTLT4G ONSEMI MBRD1035CTLG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape
Mounting: SMD
Case: DPAK
Type of diode: Schottky rectifying
Load current: 5A x2
Max. forward voltage: 0.55V
Max. load current: 10A
Max. off-state voltage: 35V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
на замовлення 2610 шт:
термін постачання 14-30 дні (днів)
13+35.81 грн
14+30.35 грн
50+28.77 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MM3Z12VB ONSEMI MM3Z9V1B.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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NTR4101PT1G NTR4101PT1G ONSEMI ntr4101.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.7A
Gate charge: 7.5nC
On-state resistance: 0.21Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
на замовлення 9165 шт:
термін постачання 14-30 дні (днів)
20+23.28 грн
25+17.29 грн
28+15.05 грн
50+10.64 грн
100+9.39 грн
500+7.23 грн
1000+6.32 грн
1500+5.82 грн
3000+5.24 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
NTR2101PT1G NTR2101PT1G ONSEMI ntr2101p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -8V
Drain current: -3A
On-state resistance: 52mΩ
Power dissipation: 0.96W
Gate-source voltage: ±8V
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
на замовлення 1430 шт:
термін постачання 14-30 дні (днів)
14+34.02 грн
18+23.28 грн
22+19.79 грн
50+13.55 грн
100+11.56 грн
250+9.56 грн
500+8.40 грн
1000+7.48 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MBRD835LT4G MBRD835LT4G ONSEMI MBRD835LG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
на замовлення 2499 шт:
термін постачання 14-30 дні (днів)
8+56.41 грн
11+39.41 грн
12+34.84 грн
50+30.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MMBD2835LT1G ONSEMI mmbd2835lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; 4ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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SBRD8835LG ONSEMI mbrd835l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; tube
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 75A
Kind of package: tube
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SBRD8835LT4G-VF01 ONSEMI mbrd835l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
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MMBF4392 ONSEMI MMBF4392.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
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NLVVHC1G66DTT1G
+1
 		NLVVHC1G66DTT1G ONSEMI mc74vhc1g66-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; TSSOP5; 2÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of outputs: 1
Quiescent current: 40µA
Application: automotive industry
Kind of output: SPST-NO
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
21+21.49 грн
27+15.88 грн
Мінімальне замовлення: 21
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NS5B1G385DFT2G NS5B1G385DFT2G ONSEMI ns5b1g385-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL
Type of integrated circuit: analog switch
Number of channels: 1
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SC70
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of outputs: 1
Kind of output: SPST-NO
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NFA50460R4B ONSEMI nfa50460r4-d.pdf Category: Motor and PWM drivers
Description: IC: driver; DIP23; 4A
Operating temperature: -40...150°C
Mounting: THT
Output current: 4A
Case: DIP23
Type of integrated circuit: driver
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NCP785AH150T1G NCP785AH150T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.5V
Tolerance: ±5%
Input voltage: 25...450V
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NCP785AH33T1G NCP785AH33T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 3.3V
Tolerance: ±5%
Input voltage: 25...450V
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NCP785AH120T1G NCP785AH120T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.2V
Tolerance: ±5%
Input voltage: 25...450V
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NCP785AH50T1G NCP785AH50T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 10mA; SOT89; SMD; NCP785A
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 5V
Tolerance: ±5%
Input voltage: 25...450V
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MC74HC03ADG MC74HC03ADG ONSEMI mc74hc03a-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Kind of output: open drain
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
11+37.41 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MC74HC03ADR2G MC74HC03ADR2G ONSEMI MC74HC03A-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Kind of output: open drain
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
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MC74HC03ADTR2G MC74HC03ADTR2G ONSEMI MC74HC03A-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Kind of output: open drain
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
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NCP51400MNTXG NCP51400.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51401MNTXG NCP51401.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51402MNTXG NCP51402.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51403MNTXG NCP51403.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51510MNTAG NCP51510.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Operating voltage: 1.1...3.6/2.7...3.6V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCV51400MWTXG NCP51400.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51145MNTAG NCP51145.pdf
NCP51145MNTAG
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: 0.6...2.5V DC
Output current: 1.8A
Operating voltage: 1...5.5/4.75...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN8
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NCV51190MNTAG NCP51190.pdf
NCV51190MNTAG
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.675...1.35V
Output current: 1.5A
Operating voltage: 1.35...2.5/2.2...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN8
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NCV51200MNTXG NCP51200.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCV51200MWTXG NCP51200.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCV51400MNTXG NCP51400.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCV51510MNTAG NCP51510.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Operating voltage: 1.1...3.6/2.7...3.6V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: DFN10
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NCP51198PDR2G NCP51198.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.675...1.35V
Output current: 1.5A
Operating voltage: 1.35...2.5/2.2...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NCP51199PDR2G NCP51199.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 125°C
Output voltage: 0.75...2.5V
Output current: 2A
Operating voltage: 1.5...5.5/4.75...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NCP51145PDR2G NCP51145.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: 0.6...2.5V DC
Output current: 1.8A
Operating voltage: 1...5.5/4.75...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NCV51198PDR2G NCP51198.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.675...1.35V
Output current: 1.5A
Operating voltage: 1.35...2.5/2.2...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NCV51199PDR2G NCP51199.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 125°C
Output voltage: 0.75...2.5V
Output current: 2A
Operating voltage: 1.5...5.5/4.75...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8-EP
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NSS30071MR6T1G nss30071mr6t1g.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.7A; 0.342W; SC74-6
Kind of package: reel; tape
Type of transistor: NPN
Case: SC74-6
Mounting: SMD
Power dissipation: 0.342W
Collector current: 0.7A
Collector-emitter voltage: 30V
Application: automotive industry
Polarisation: bipolar
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MBRD340T4G MBRD3x0.PDF
MBRD340T4G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.45V
Load current: 3A
Max. load current: 6A
Max. off-state voltage: 40V
Case: DPAK
на замовлення 1959 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+48.35 грн
11+39.74 грн
12+37.33 грн
50+31.68 грн
100+29.27 грн
250+26.60 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MJD340T4G mjd340-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Case: DPAK
Polarisation: bipolar
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MJD340RLG mjd340-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Case: DPAK
Polarisation: bipolar
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NJVMJD340T4G mjd340-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Application: automotive industry
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Case: DPAK
Polarisation: bipolar
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FDMC86260ET150 fdmc86260et150-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 69mΩ
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 65W
Pulsed drain current: 116A
Drain-source voltage: 150V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
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BD681S BD675A-677A-679a-681.pdf BD681S.pdf
BD681S
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 4A; 40W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO126ISO
Mounting: THT
Kind of package: bulk
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BD681S BD675-D.PDF FAIRS18550-1.pdf?t.download=true&u=5oefqw
BD681S
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 4A; 40W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO126ISO
Mounting: THT
Kind of package: bulk
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MJE5742G MJE5742G.PDF
MJE5742G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 400V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 578 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+154.90 грн
4+116.40 грн
10+74.83 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NV25320DWHFT3G NV25080-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Memory organisation: 4kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: SOIC8
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 32kb EEPROM
Clock frequency: 10MHz
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S1MFL S1xFL.pdf
S1MFL
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: SOD123F
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 4pF
Reverse recovery time: 2µs
на замовлення 1127 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+15.22 грн
41+10.23 грн
50+8.43 грн
100+7.67 грн
500+5.93 грн
1000+5.19 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
MRA4003T3G MRA4006T3G-DTE.PDF
MRA4003T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 4147 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.28 грн
29+14.80 грн
50+10.79 грн
100+9.25 грн
250+7.37 грн
500+6.04 грн
1000+4.79 грн
2000+4.16 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
FAN6300AMY FAN6300.PDF
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; PWM controller; SO8; flyback; reel,tape; 8÷25VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 8...25V DC
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NVVR26A120M1WST nvvr26a120m1wst-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 400A
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Electrical mounting: screw; THT
On-state resistance: 4.6mΩ
Power dissipation: 1kW
Technology: SiC
Gate-source voltage: -10...25V
Kind of package: tube
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NVVR26A120M1WSB nvvr26a120m1wsb-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 400A
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Electrical mounting: screw; THT
On-state resistance: 4.6mΩ
Power dissipation: 1kW
Technology: SiC
Gate-source voltage: -10...25V
Kind of package: tube
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NVVR26A120M1WSS nvvr26a120m1wss-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 400A
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Electrical mounting: screw; THT
On-state resistance: 4.6mΩ
Power dissipation: 1kW
Technology: SiC
Gate-source voltage: -10...25V
Kind of package: tube
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S1M S1A.pdf
S1M
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.4W
Capacitance: 6.6pF
на замовлення 4571 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.43 грн
42+9.98 грн
49+8.65 грн
100+6.88 грн
500+5.23 грн
1000+4.61 грн
2000+4.07 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SZBZX84C2V7ET1G BZX84CxxET1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C2V7LT1G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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LM317LZ lm317lz_fai.pdf
LM317LZ
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
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74LCX125MTCX 74LCX125M.pdf
74LCX125MTCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
на замовлення 945 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.91 грн
27+15.46 грн
30+14.22 грн
35+12.06 грн
100+11.06 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
74LCX125MTC 74LCX125M.pdf
74LCX125MTC
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Quiescent current: 10µA
Kind of output: 3-state
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
22+20.59 грн
34+12.47 грн
38+10.97 грн
50+10.89 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
74LCX126MTCX 74LCX126.pdf
74LCX126MTCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LCX
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Technology: CMOS
Kind of output: 3-state
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.28 грн
30+14.30 грн
33+12.80 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
NCL30186BDR2G ncl30186-d.pdf
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; boost,buck,buck-boost,flyback,SEPIC; SOP10; 200V
Type of integrated circuit: driver
Topology: boost; buck; buck-boost; flyback; SEPIC
Case: SOP10
Output voltage: 200V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Application: lighting
Input voltage: 9.4...26V
Frequency: 150kHz
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MBRD1035CTLT4G MBRD1035CTLG.PDF
MBRD1035CTLT4G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape
Mounting: SMD
Case: DPAK
Type of diode: Schottky rectifying
Load current: 5A x2
Max. forward voltage: 0.55V
Max. load current: 10A
Max. off-state voltage: 35V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
на замовлення 2610 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+35.81 грн
14+30.35 грн
50+28.77 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MM3Z12VB MM3Z9V1B.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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NTR4101PT1G ntr4101.pdf
NTR4101PT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.7A
Gate charge: 7.5nC
On-state resistance: 0.21Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
на замовлення 9165 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.28 грн
25+17.29 грн
28+15.05 грн
50+10.64 грн
100+9.39 грн
500+7.23 грн
1000+6.32 грн
1500+5.82 грн
3000+5.24 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
NTR2101PT1G ntr2101p-d.pdf
NTR2101PT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -8V
Drain current: -3A
On-state resistance: 52mΩ
Power dissipation: 0.96W
Gate-source voltage: ±8V
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
на замовлення 1430 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.02 грн
18+23.28 грн
22+19.79 грн
50+13.55 грн
100+11.56 грн
250+9.56 грн
500+8.40 грн
1000+7.48 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MBRD835LT4G MBRD835LG.PDF
MBRD835LT4G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
на замовлення 2499 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+56.41 грн
11+39.41 грн
12+34.84 грн
50+30.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MMBD2835LT1G mmbd2835lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; 4ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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SBRD8835LG mbrd835l-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; tube
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 75A
Kind of package: tube
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SBRD8835LT4G-VF01 mbrd835l-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
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MMBF4392 MMBF4392.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
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NLVVHC1G66DTT1G mc74vhc1g66-d.pdf
NLVVHC1G66DTT1G
+1
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; TSSOP5; 2÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of outputs: 1
Quiescent current: 40µA
Application: automotive industry
Kind of output: SPST-NO
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.49 грн
27+15.88 грн
Мінімальне замовлення: 21
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NS5B1G385DFT2G ns5b1g385-d.pdf
NS5B1G385DFT2G
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; SC70; 2÷5.5VDC; reel,tape; TTL
Type of integrated circuit: analog switch
Number of channels: 1
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SC70
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of outputs: 1
Kind of output: SPST-NO
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NFA50460R4B nfa50460r4-d.pdf
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; DIP23; 4A
Operating temperature: -40...150°C
Mounting: THT
Output current: 4A
Case: DIP23
Type of integrated circuit: driver
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NCP785AH150T1G ncp785a-d.pdf
NCP785AH150T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.5V
Tolerance: ±5%
Input voltage: 25...450V
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NCP785AH33T1G ncp785a-d.pdf
NCP785AH33T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 3.3V
Tolerance: ±5%
Input voltage: 25...450V
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NCP785AH120T1G ncp785a-d.pdf
NCP785AH120T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.2V
Tolerance: ±5%
Input voltage: 25...450V
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NCP785AH50T1G ncp785a-d.pdf
NCP785AH50T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 10mA; SOT89; SMD; NCP785A
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 5V
Tolerance: ±5%
Input voltage: 25...450V
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MC74HC03ADG mc74hc03a-d.pdf
MC74HC03ADG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Kind of output: open drain
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+37.41 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MC74HC03ADR2G MC74HC03A-D.pdf
MC74HC03ADR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Kind of output: open drain
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
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MC74HC03ADTR2G MC74HC03A-D.pdf
MC74HC03ADTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Kind of output: open drain
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
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