Продукція > ONSEMI > Всі товари виробника ONSEMI (142465) > Сторінка 2352 з 2375

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EGP10D ONSEMI ONSM-S-A0003590773-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 50ns
Max. off-state voltage: 200V
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 50ns
Load current: 1A
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SB5100 SB5100 ONSEMI SB5100%20N0092%20REV.B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
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MC33077DR2G ONSEMI mc33077-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 37MHz; SO8; ±2.5÷18VDC; reel,tape
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 1.5mV
Slew rate: 11V/μs
Voltage supply range: ± 2.5...18V DC
Bandwidth: 37MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual
Input offset current: 240nA
Input bias current: 1.2µA
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FJV1845FMTF ONSEMI FJV1845.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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MPSA29 MPSA29 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: bulk
Frequency: 125MHz
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MPSA29-D26Z MPSA29-D26Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
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NTMS4177PR2G ONSEMI ntms4177p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -46A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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NC7SZ175P6X NC7SZ175P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B7754D14B820&compId=NC7SZ175-D.pdf?ci_sign=5b5b51238f30ed678096f37017d439b3c62bbbfa Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
на замовлення 2898 шт:
термін постачання 21-30 дні (днів)
84+5.14 грн
97+4.14 грн
106+3.75 грн
117+3.41 грн
500+3.31 грн
1000+3.13 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
MMBT2369ALT1G MMBT2369ALT1G ONSEMI mmbt2369lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 15V
Current gain: 40...120
Polarisation: bipolar
Type of transistor: NPN
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
39+11.14 грн
54+7.40 грн
80+5.00 грн
100+4.21 грн
477+1.96 грн
1311+1.86 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MMBT2369LT1G MMBT2369LT1G ONSEMI mmbt2369lt1-d.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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SMMBT2369ALT1G ONSEMI mmbt2369lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BAT54WT1G BAT54WT1G ONSEMI bat54wt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Max. load current: 0.3A
на замовлення 2650 шт:
термін постачання 21-30 дні (днів)
55+7.87 грн
68+5.89 грн
105+3.81 грн
500+2.66 грн
503+1.86 грн
1382+1.76 грн
Мінімальне замовлення: 55
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NSVBAT54WT1G ONSEMI bat54wt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70,SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC70; SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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SMS12CT1G ONSEMI sms05c-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 15A; 350W; common anode; TSOP6; Ch: 5
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common anode
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Version: ESD
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NCV8170BMX330TCG ONSEMI NCV8170-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; XDFN4; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Case: XDFN4
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KSB1151YSTU ONSEMI ksb1151-d.pdf FAIRS21120-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
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KSB1151YS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE33CE660B280D6&compId=KSB1151.pdf?ci_sign=af30fdfbb10fe21d972f1ea0040afdf92eba72e2 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
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FL7760BM6X ONSEMI fl7760-d.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; Uin: 8÷60V; Uout: 5V; SOT23-6
Output voltage: 5V
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 8...60V
Frequency: 1MHz
Topology: buck
Type of integrated circuit: driver
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MC74AC11DG MC74AC11DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CE568B1350143&compId=MC74AC11-D.PDF?ci_sign=45e636765dbb7c837522506ffb26c98f68a0547a Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
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MC74AC11DR2G MC74AC11DR2G ONSEMI mc74ac11-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
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1N5236B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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1N5236BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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FUSB251UCX ONSEMI fusb251-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Kind of integrated circuit: USB C controller
Case: WLCSP15
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 15µA
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
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FUSB307BMPX ONSEMI fusb307b-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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FUSB307BVMPX ONSEMI fusb307b-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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FUSB308BVMPX ONSEMI fusb308b-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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HUF75321P3 HUF75321P3 ONSEMI huf75321p3-d.pdf FAIRS45727-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 34mΩ
Gate-source voltage: ±20V
Drain current: 31A
Drain-source voltage: 55V
Power dissipation: 93W
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
6+83.96 грн
10+68.41 грн
17+57.28 грн
45+54.89 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BF720T1G BF720T1G ONSEMI bf720t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 829 шт:
термін постачання 21-30 дні (днів)
13+34.27 грн
16+25.93 грн
89+10.50 грн
244+9.94 грн
Мінімальне замовлення: 13
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SBF720T1G SBF720T1G ONSEMI bf720t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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ESD5B5.0ST5G ONSEMI esd5b5.0st1-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 5.8V; bidirectional; SOD523; general purpose; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Application: general purpose
Capacitance: 32pF
Leakage current: 1µA
Peak pulse power dissipation: 50W
Number of channels: 1
Operating temperature: -55...150°C
Version: ESD
на замовлення 24000 шт:
термін постачання 21-30 дні (днів)
8000+3.26 грн
Мінімальне замовлення: 8000
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FQA13N80-F109 FQA13N80-F109 ONSEMI fqa13n80_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 88nC
Pulsed drain current: 50.4A
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PZTA06 PZTA06 ONSEMI pzta06-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Mounting: SMD
Case: SOT223-4; TO261-4
Collector current: 0.5A
Power dissipation: 1W
Collector-emitter voltage: 80V
Current gain: 100
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 3332 шт:
термін постачання 21-30 дні (днів)
15+28.96 грн
25+24.34 грн
41+23.07 грн
100+21.56 грн
500+21.00 грн
Мінімальне замовлення: 15
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BCW66GLT1G BCW66GLT1G ONSEMI bcw66glt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 369 шт:
термін постачання 21-30 дні (днів)
46+9.42 грн
57+7.00 грн
86+4.68 грн
105+3.79 грн
Мінімальне замовлення: 46
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BCW66GLT3G BCW66GLT3G ONSEMI bcw66glt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBCW66GLT1G SBCW66GLT1G ONSEMI bcw66glt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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BZX84C20LT1G BZX84C20LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 3909 шт:
термін постачання 21-30 дні (днів)
53+8.15 грн
79+5.09 грн
93+4.30 грн
141+2.83 грн
169+2.36 грн
500+1.61 грн
841+1.11 грн
2310+1.05 грн
Мінімальне замовлення: 53
В кошику  од. на суму  грн.
SZBZX84C20LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C20ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C30ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C30LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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D45VH10G D45VH10G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD02C15B7856469&compId=D45VH10G.PDF?ci_sign=36d6c39fc2e205d1aebb9a21aa9dad6b8b2fc16e Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 83W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Current gain: 20
Mounting: THT
Kind of package: tube
на замовлення 319 шт:
термін постачання 21-30 дні (днів)
9+47.97 грн
12+33.97 грн
32+29.67 грн
87+28.08 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
HCPL0453 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F92711740C7&compId=HCPL0453.pdf?ci_sign=01cc30e34938b8a5cb1556df1a605762036154b5 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -0.5...20V
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HCPL0453R2 ONSEMI hcpl0534-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; 1Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: SOIC8
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...20V
Manufacturer series: HCPL0453
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SZ1SMA5927BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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SZ1SMB5918BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDS4501h FDS4501h ONSEMI FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Mounting: SMD
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Gate charge: 21/27nC
Kind of package: reel; tape
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Kind of channel: enhancement
Drain-source voltage: 30/-20V
On-state resistance: 80/29mΩ
Polarisation: unipolar
Case: SO8
Power dissipation: 2.5W
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MMSZ5249B MMSZ5249B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 19V
Manufacturer series: MMSZ52xxB
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
160+2.39 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
MPSA14G MPSA14G ONSEMI mpsa13-d.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
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MMUN2114LT1G MMUN2114LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0FBCEB303FB2749&compId=MMUN2114.PDF?ci_sign=1faa3e69c4f082a2adc844bd2107a4d5634eab01 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
на замовлення 2451 шт:
термін постачання 21-30 дні (днів)
42+10.28 грн
72+5.57 грн
100+3.98 грн
116+3.44 грн
500+2.49 грн
696+1.34 грн
1912+1.27 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MMUN2114LT3G MMUN2114LT3G ONSEMI dta114y-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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SMMUN2114LT1G SMMUN2114LT1G ONSEMI dta114y-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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FCPF400N80Z FCPF400N80Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D89359B44FBE469&compId=FCPF400N80Z.pdf?ci_sign=616bae57e21bc9e296fd16ba527a37af3aefdcee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
2+218.45 грн
5+171.03 грн
10+156.71 грн
11+93.07 грн
28+88.30 грн
Мінімальне замовлення: 2
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MC33174DR2G MC33174DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F6A56FC0C3411C&compId=MC33172DG-DTE.PDF?ci_sign=75d33d92f5492c18acf8af66fca3207b27f497d2 Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Number of channels: 4
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MC33174DTBR2G ONSEMI mc33171-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; TSSOP14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
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MC33174VDR2G ONSEMI mc33171-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
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MUR180ERLG MUR180ERLG ONSEMI mur180e-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41
Mounting: THT
Case: DO41
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 1A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
16+28.27 грн
21+19.17 грн
65+14.40 грн
179+13.60 грн
250+13.28 грн
500+13.05 грн
Мінімальне замовлення: 16
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MMBD2836LT1G ONSEMI mmbd2835lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
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MMBD2835LT1G ONSEMI mmbd2835lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common anode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.1A
Max. off-state voltage: 35V
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MMBD2837LT1G MMBD2837LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CD38A84AE97820&compId=MMBD2837_8.pdf?ci_sign=50204fe3b7b73e3b0b616b2e8be0f02eced94911 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Case: SOT23
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Capacitance: 4pF
Reverse recovery time: 4ns
Load current: 0.15A
Power dissipation: 0.225W
Max. load current: 0.45A
Max. forward voltage: 1.2V
Max. off-state voltage: 75V
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MMBD2838LT1G ONSEMI mmbd2837lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.15A
Max. off-state voltage: 75V
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EGP10D ONSM-S-A0003590773-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 50ns
Max. off-state voltage: 200V
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 50ns
Load current: 1A
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SB5100 SB5100%20N0092%20REV.B.pdf
SB5100
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
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MC33077DR2G mc33077-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 37MHz; SO8; ±2.5÷18VDC; reel,tape
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 1.5mV
Slew rate: 11V/μs
Voltage supply range: ± 2.5...18V DC
Bandwidth: 37MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual
Input offset current: 240nA
Input bias current: 1.2µA
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FJV1845FMTF FJV1845.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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MPSA29 pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49
MPSA29
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: bulk
Frequency: 125MHz
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MPSA29-D26Z pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49
MPSA29-D26Z
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
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NTMS4177PR2G ntms4177p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.4A; Idm: -46A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -46A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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NC7SZ175P6X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B7754D14B820&compId=NC7SZ175-D.pdf?ci_sign=5b5b51238f30ed678096f37017d439b3c62bbbfa
NC7SZ175P6X
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
на замовлення 2898 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
84+5.14 грн
97+4.14 грн
106+3.75 грн
117+3.41 грн
500+3.31 грн
1000+3.13 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
MMBT2369ALT1G mmbt2369lt1-d.pdf
MMBT2369ALT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 15V
Current gain: 40...120
Polarisation: bipolar
Type of transistor: NPN
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.14 грн
54+7.40 грн
80+5.00 грн
100+4.21 грн
477+1.96 грн
1311+1.86 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MMBT2369LT1G description mmbt2369lt1-d.pdf
MMBT2369LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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SMMBT2369ALT1G mmbt2369lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BAT54WT1G bat54wt1-d.pdf
BAT54WT1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Max. load current: 0.3A
на замовлення 2650 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
55+7.87 грн
68+5.89 грн
105+3.81 грн
500+2.66 грн
503+1.86 грн
1382+1.76 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
NSVBAT54WT1G bat54wt1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70,SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC70; SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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SMS12CT1G sms05c-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 15A; 350W; common anode; TSOP6; Ch: 5
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common anode
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Version: ESD
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NCV8170BMX330TCG NCV8170-D.PDF
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; XDFN4; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Case: XDFN4
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KSB1151YSTU ksb1151-d.pdf FAIRS21120-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
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KSB1151YS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE33CE660B280D6&compId=KSB1151.pdf?ci_sign=af30fdfbb10fe21d972f1ea0040afdf92eba72e2
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
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FL7760BM6X fl7760-d.pdf
Виробник: ONSEMI
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; Uin: 8÷60V; Uout: 5V; SOT23-6
Output voltage: 5V
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 8...60V
Frequency: 1MHz
Topology: buck
Type of integrated circuit: driver
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MC74AC11DG pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CE568B1350143&compId=MC74AC11-D.PDF?ci_sign=45e636765dbb7c837522506ffb26c98f68a0547a
MC74AC11DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
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MC74AC11DR2G mc74ac11-d.pdf
MC74AC11DR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
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1N5236B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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1N5236BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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FUSB251UCX fusb251-d.pdf
Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Kind of integrated circuit: USB C controller
Case: WLCSP15
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 15µA
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
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FUSB307BMPX fusb307b-d.pdf
Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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FUSB307BVMPX fusb307b-d.pdf
Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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FUSB308BVMPX fusb308b-d.pdf
Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of integrated circuit: USB C controller
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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HUF75321P3 huf75321p3-d.pdf FAIRS45727-1.pdf?t.download=true&u=5oefqw
HUF75321P3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 34mΩ
Gate-source voltage: ±20V
Drain current: 31A
Drain-source voltage: 55V
Power dissipation: 93W
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+83.96 грн
10+68.41 грн
17+57.28 грн
45+54.89 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BF720T1G bf720t1-d.pdf
BF720T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 829 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.27 грн
16+25.93 грн
89+10.50 грн
244+9.94 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SBF720T1G bf720t1-d.pdf
SBF720T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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ESD5B5.0ST5G esd5b5.0st1-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 5.8V; bidirectional; SOD523; general purpose; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Application: general purpose
Capacitance: 32pF
Leakage current: 1µA
Peak pulse power dissipation: 50W
Number of channels: 1
Operating temperature: -55...150°C
Version: ESD
на замовлення 24000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8000+3.26 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
FQA13N80-F109 fqa13n80_f109-d.pdf
FQA13N80-F109
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 88nC
Pulsed drain current: 50.4A
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PZTA06 pzta06-d.pdf
PZTA06
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Mounting: SMD
Case: SOT223-4; TO261-4
Collector current: 0.5A
Power dissipation: 1W
Collector-emitter voltage: 80V
Current gain: 100
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 3332 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.96 грн
25+24.34 грн
41+23.07 грн
100+21.56 грн
500+21.00 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BCW66GLT1G bcw66glt1-d.pdf
BCW66GLT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 369 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.42 грн
57+7.00 грн
86+4.68 грн
105+3.79 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BCW66GLT3G bcw66glt1-d.pdf
BCW66GLT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBCW66GLT1G bcw66glt1-d.pdf
SBCW66GLT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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BZX84C20LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C20LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 3909 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
53+8.15 грн
79+5.09 грн
93+4.30 грн
141+2.83 грн
169+2.36 грн
500+1.61 грн
841+1.11 грн
2310+1.05 грн
Мінімальне замовлення: 53
В кошику  од. на суму  грн.
SZBZX84C20LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C20ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C30ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C30LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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D45VH10G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD02C15B7856469&compId=D45VH10G.PDF?ci_sign=36d6c39fc2e205d1aebb9a21aa9dad6b8b2fc16e
D45VH10G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 83W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Current gain: 20
Mounting: THT
Kind of package: tube
на замовлення 319 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.97 грн
12+33.97 грн
32+29.67 грн
87+28.08 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
HCPL0453 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F92711740C7&compId=HCPL0453.pdf?ci_sign=01cc30e34938b8a5cb1556df1a605762036154b5
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Case: SO8
Max. off-state voltage: 5V
Output voltage: -0.5...20V
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HCPL0453R2 hcpl0534-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; 1Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: SOIC8
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...20V
Manufacturer series: HCPL0453
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SZ1SMA5927BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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SZ1SMB5918BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDS4501h FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf
FDS4501h
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Mounting: SMD
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Gate charge: 21/27nC
Kind of package: reel; tape
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Kind of channel: enhancement
Drain-source voltage: 30/-20V
On-state resistance: 80/29mΩ
Polarisation: unipolar
Case: SO8
Power dissipation: 2.5W
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MMSZ5249B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5249B
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 19V
Manufacturer series: MMSZ52xxB
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
160+2.39 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
MPSA14G mpsa13-d.pdf
MPSA14G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
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MMUN2114LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0FBCEB303FB2749&compId=MMUN2114.PDF?ci_sign=1faa3e69c4f082a2adc844bd2107a4d5634eab01
MMUN2114LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
на замовлення 2451 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.28 грн
72+5.57 грн
100+3.98 грн
116+3.44 грн
500+2.49 грн
696+1.34 грн
1912+1.27 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MMUN2114LT3G dta114y-d.pdf
MMUN2114LT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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SMMUN2114LT1G dta114y-d.pdf
SMMUN2114LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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FCPF400N80Z pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D89359B44FBE469&compId=FCPF400N80Z.pdf?ci_sign=616bae57e21bc9e296fd16ba527a37af3aefdcee
FCPF400N80Z
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+218.45 грн
5+171.03 грн
10+156.71 грн
11+93.07 грн
28+88.30 грн
Мінімальне замовлення: 2
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MC33174DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F6A56FC0C3411C&compId=MC33172DG-DTE.PDF?ci_sign=75d33d92f5492c18acf8af66fca3207b27f497d2
MC33174DR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Number of channels: 4
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MC33174DTBR2G mc33171-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; TSSOP14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
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MC33174VDR2G mc33171-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
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MUR180ERLG mur180e-d.pdf
MUR180ERLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41
Mounting: THT
Case: DO41
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 1A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.27 грн
21+19.17 грн
65+14.40 грн
179+13.60 грн
250+13.28 грн
500+13.05 грн
Мінімальне замовлення: 16
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MMBD2836LT1G mmbd2835lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
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MMBD2835LT1G mmbd2835lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common anode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.1A
Max. off-state voltage: 35V
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MMBD2837LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED998CD38A84AE97820&compId=MMBD2837_8.pdf?ci_sign=50204fe3b7b73e3b0b616b2e8be0f02eced94911
MMBD2837LT1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Case: SOT23
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Capacitance: 4pF
Reverse recovery time: 4ns
Load current: 0.15A
Power dissipation: 0.225W
Max. load current: 0.45A
Max. forward voltage: 1.2V
Max. off-state voltage: 75V
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MMBD2838LT1G mmbd2837lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; reel,tape
Case: SOT23
Semiconductor structure: common cathode; double
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.15A
Max. off-state voltage: 75V
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