| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| DTA144WET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDC3612 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6 Mounting: SMD Power dissipation: 1.6W Polarisation: unipolar Drain current: 2.6A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 0.24Ω |
на замовлення 2765 шт: термін постачання 14-30 дні (днів) |
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NDS332P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.74Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 1473 шт: термін постачання 14-30 дні (днів) |
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MBR60H100CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.81V Kind of package: tube Max. forward impulse current: 350A Heatsink thickness: 1.15...1.39mm Max. load current: 60A |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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MBR60L45CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.76V Kind of package: tube Max. forward impulse current: 200A Heatsink thickness: 1.15...1.39mm Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR41H100CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.76V Kind of package: tube Max. load current: 40A Max. forward impulse current: 350A |
на замовлення 97 шт: термін постачання 14-30 дні (днів) |
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SS25 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SS25FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 0.7V Max. off-state voltage: 50V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5225B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3V; CASE017AG; single diode; bulk; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N52xxB |
на замовлення 4883 шт: термін постачання 14-30 дні (днів) |
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1N5228BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 44990 шт: термін постачання 14-30 дні (днів) |
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| 1N5222B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.5V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5226BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5227B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; bulk; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5223B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5227BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5229BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FOD3125 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 60ns Turn-off time: 60ns Max. off-state voltage: 5V Output voltage: 0...35V Slew rate: 50kV/μs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| NTND31225CZTAG | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Case: XLLGA6 Power dissipation: 0.125W Polarisation: unipolar Drain current: 220/-127mA Kind of channel: enhancement Drain-source voltage: 20/-20V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 1.5/5Ω |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
| NCP45560IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: high Control voltage: 0.5...13.5V DC Output current: 17A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN12 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 6.8mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP45560IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: low Control voltage: 0.5...13.5V DC Output current: 17A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN12 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 6.8mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQD2N90TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.08A Pulsed drain current: 6.8A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 7.2Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Drain current: 1.08A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: IPAK On-state resistance: 7.2Ω Mounting: THT Pulsed drain current: 6.8A Power dissipation: 50W Gate charge: 15nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Drain current: 1.08A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: IPAK On-state resistance: 7.2Ω Mounting: THT Pulsed drain current: 6.8A Power dissipation: 50W Gate charge: 15nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NGTB35N65FL2WG | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 35A; 150W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 35A Power dissipation: 150W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 125nC Kind of package: tube |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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| LM7301SN1T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV Mounting: SMT Input offset voltage: 6mV Type of integrated circuit: operational amplifier Operating temperature: -40...85°C Integrated circuit features: low power; rail-to-rail Voltage supply range: 1.8...32V DC Kind of package: reel; tape Input offset current: 55nA Case: SOT23-5 Number of channels: single; 1 Bandwidth: 4MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74VHC125MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Kind of output: 3-state Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: VHC Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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2SA2016-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89 Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 1.3W Polarisation: bipolar Type of transistor: PNP Current gain: 200...560 Kind of package: reel; tape Case: SOT89 Frequency: 290MHz Collector current: 7A |
на замовлення 713 шт: термін постачання 14-30 дні (днів) |
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2SA2012-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89 Mounting: SMD Collector-emitter voltage: 30V Power dissipation: 3.5W Polarisation: bipolar Type of transistor: PNP Current gain: 200...560 Kind of package: reel; tape Case: SOT89 Frequency: 350MHz Collector current: 5A |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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2SA2040-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 8A Power dissipation: 1W Case: DPAK Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 330MHz |
на замовлення 467 шт: термін постачання 14-30 дні (днів) |
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2SA2153-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89 Mounting: SMD Collector current: 2A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 420MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2013-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89 Mounting: SMD Collector current: 4A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 360MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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2SA2039-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 0.8W Case: DPAK Current gain: 200...560 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2125-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2125-TD-H | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2126-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK Mounting: SMD Collector current: 3A Power dissipation: 0.8W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2202-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89 Mounting: SMD Collector current: 2A Power dissipation: 1.3W Collector-emitter voltage: 100V Current gain: 200...400 Frequency: 300MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSV2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Application: automotive industry Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| N24C08UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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MJD31CG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Mounting: SMD Kind of package: tube Frequency: 3MHz Current gain: 10...50 |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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MJD31CT4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Current gain: 10...50 |
на замовлення 2193 шт: термін постачання 14-30 дні (днів) |
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MJD31CRLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NJVMJD31CT4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NJVMJD31CG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NJVMJD31CRLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL431ILPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR2H100SFT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.68V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 1232 шт: термін постачання 14-30 дні (днів) |
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BZX79C3V6 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: THT Tolerance: ±5% Case: CASE017AG Kind of package: bulk Semiconductor structure: single diode Manufacturer series: BZX79C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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MC14541BDTR2G | ONSEMI |
Category: RTC circuitsDescription: IC: digital; programmable timer; TSSOP14; -55÷125°C; 3÷18V; 10.5us Kind of integrated circuit: programmable timer Type of integrated circuit: digital Integrated circuit features: programmable Case: TSSOP14 Mounting: SMD Operating temperature: -55...125°C Delay time: 10.5µs Supply voltage: 3...18V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FSA3157L6X | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,SPDT; SPDT; Ch: 1; Outputs: 2; IN: 1 Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; SPDT Output configuration: SPDT Number of channels: 1 Number of outputs: 2 Mounting: SMD Resistance: 7Ω Operating temperature: -40...85°C Number of inputs: 1 |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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MC14504BDR2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16 Mounting: SMD Type of integrated circuit: digital Technology: CMOS Case: SO16 Kind of integrated circuit: level shifter Number of channels: 6 |
на замовлення 1479 шт: термін постачання 14-30 дні (днів) |
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MC14504BDG | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6 Type of integrated circuit: digital Kind of integrated circuit: level shifter Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO16 Number of outputs: 6 |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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MC14504BDTR2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: level shifter Case: TSSOP16 Mounting: SMD Number of channels: 6 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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MC14504BDTG | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: level shifter Case: TSSOP16 Mounting: SMD Number of channels: 6 Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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J111-D74Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Mounting: THT Gate current: 50mA Power dissipation: 0.625W Polarisation: unipolar Drain current: 20mA Type of transistor: N-JFET Gate-source voltage: -35V Kind of package: Ammo Pack Case: TO92 On-state resistance: 30Ω |
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В кошику од. на суму грн. | ||||||||||||||||
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J111-D26Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Mounting: THT Gate current: 50mA Power dissipation: 0.625W Polarisation: unipolar Drain current: 20mA Type of transistor: N-JFET Gate-source voltage: -35V Kind of package: tape Case: TO92 On-state resistance: 30Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SZMMSZ3V3T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MRS1504T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 1.02V Max. off-state voltage: 0.4kV Load current: 1.5A Max. load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying |
на замовлення 1535 шт: термін постачання 14-30 дні (днів) |
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FAN7602CMX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Mounting: SMD Case: SO8 Operating temperature: -25...125°C Kind of package: reel; tape Supply voltage: 8...25V Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN3100TSX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SOT23-5 Output current: -2.5...1.8A Number of channels: 1 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 14ns Kind of package: reel; tape Kind of output: non-inverting |
на замовлення 1544 шт: термін постачання 14-30 дні (днів) |
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| DTA144WET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80...140
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| FDC3612 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 2.6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 0.24Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 2.6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 0.24Ω
на замовлення 2765 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.83 грн |
| 10+ | 42.27 грн |
| 13+ | 34.72 грн |
| 50+ | 23.73 грн |
| 100+ | 21.13 грн |
| 500+ | 19.71 грн |
| NDS332P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1473 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.48 грн |
| 15+ | 29.77 грн |
| 50+ | 20.21 грн |
| 100+ | 17.11 грн |
| 500+ | 11.74 грн |
| 1000+ | 11.66 грн |
| MBR60H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Kind of package: tube
Max. forward impulse current: 350A
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Kind of package: tube
Max. forward impulse current: 350A
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.34 грн |
| 10+ | 130.83 грн |
| MBR60L45CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Kind of package: tube
Max. forward impulse current: 200A
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Kind of package: tube
Max. forward impulse current: 200A
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
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| MBR41H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.89 грн |
| 10+ | 107.35 грн |
| 50+ | 106.51 грн |
| SS25 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| SS25FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
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| 1N5225B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
на замовлення 4883 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.52 грн |
| 139+ | 3.02 грн |
| 162+ | 2.60 грн |
| 249+ | 1.69 грн |
| 275+ | 1.53 грн |
| 500+ | 1.43 грн |
| 1000+ | 1.34 грн |
| 2500+ | 1.29 грн |
| 1N5228BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 44990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.03 грн |
| 68+ | 6.21 грн |
| 88+ | 4.78 грн |
| 217+ | 1.94 грн |
| 261+ | 1.61 грн |
| 500+ | 1.38 грн |
| 1000+ | 1.33 грн |
| 1N5222B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5226BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5227B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
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| 1N5223B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5227BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
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| 1N5229BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| FOD3125 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
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Мінімальне замовлення: 1000 шт
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| NTND31225CZTAG |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
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Мінімальне замовлення: 8000 шт
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| NCP45560IMNTWG-H |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
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| NCP45560IMNTWG-L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
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| FQD2N90TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.08A
Pulsed drain current: 6.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 7.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.08A
Pulsed drain current: 6.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 7.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| FQU2N90TU-AM002 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
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| FQU2N90TU-WS |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Mounting: THT
Pulsed drain current: 6.8A
Power dissipation: 50W
Gate charge: 15nC
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| NGTB35N65FL2WG |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 35A
Power dissipation: 150W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 35A
Power dissipation: 150W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 439.84 грн |
| 10+ | 279.27 грн |
| LM7301SN1T1G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Mounting: SMT
Input offset voltage: 6mV
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Voltage supply range: 1.8...32V DC
Kind of package: reel; tape
Input offset current: 55nA
Case: SOT23-5
Number of channels: single; 1
Bandwidth: 4MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Mounting: SMT
Input offset voltage: 6mV
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Voltage supply range: 1.8...32V DC
Kind of package: reel; tape
Input offset current: 55nA
Case: SOT23-5
Number of channels: single; 1
Bandwidth: 4MHz
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| 74VHC125MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHC
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHC
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SA2016-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 290MHz
Collector current: 7A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 290MHz
Collector current: 7A
на замовлення 713 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 81.28 грн |
| 10+ | 48.31 грн |
| 50+ | 36.06 грн |
| 100+ | 31.95 грн |
| 200+ | 31.45 грн |
| 2SA2012-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 3.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector current: 5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 3.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector current: 5A
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.77 грн |
| 2SA2040-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 8A
Power dissipation: 1W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 8A
Power dissipation: 1W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
на замовлення 467 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.22 грн |
| 10+ | 53.84 грн |
| 100+ | 38.58 грн |
| 2SA2153-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2013-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2029M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| 2SA2039-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
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| 2SA2125-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2125-TD-H |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2126-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2202-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| NSV2SA2029M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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| N24C08UVTG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| MJD31CG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Current gain: 10...50
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Current gain: 10...50
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.93 грн |
| 14+ | 31.62 грн |
| MJD31CT4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Current gain: 10...50
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Current gain: 10...50
на замовлення 2193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.41 грн |
| 11+ | 38.83 грн |
| 20+ | 33.97 грн |
| 50+ | 28.09 грн |
| 100+ | 24.32 грн |
| 200+ | 20.80 грн |
| 500+ | 16.86 грн |
| 1000+ | 16.27 грн |
| MJD31CRLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD31CT4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| NJVMJD31CG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
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| NJVMJD31CRLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| TL431ILPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| MBR2H100SFT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 1232 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 19+ | 22.31 грн |
| 26+ | 16.44 грн |
| 500+ | 10.90 грн |
| BZX79C3V6 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
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Мінімальне замовлення: 5000 шт
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| MC14541BDTR2G |
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Виробник: ONSEMI
Category: RTC circuits
Description: IC: digital; programmable timer; TSSOP14; -55÷125°C; 3÷18V; 10.5us
Kind of integrated circuit: programmable timer
Type of integrated circuit: digital
Integrated circuit features: programmable
Case: TSSOP14
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 10.5µs
Supply voltage: 3...18V
Category: RTC circuits
Description: IC: digital; programmable timer; TSSOP14; -55÷125°C; 3÷18V; 10.5us
Kind of integrated circuit: programmable timer
Type of integrated circuit: digital
Integrated circuit features: programmable
Case: TSSOP14
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 10.5µs
Supply voltage: 3...18V
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| FSA3157L6X |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,SPDT; SPDT; Ch: 1; Outputs: 2; IN: 1
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; SPDT
Output configuration: SPDT
Number of channels: 1
Number of outputs: 2
Mounting: SMD
Resistance: 7Ω
Operating temperature: -40...85°C
Number of inputs: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,SPDT; SPDT; Ch: 1; Outputs: 2; IN: 1
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; SPDT
Output configuration: SPDT
Number of channels: 1
Number of outputs: 2
Mounting: SMD
Resistance: 7Ω
Operating temperature: -40...85°C
Number of inputs: 1
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 11.56 грн |
| MC14504BDR2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS
Case: SO16
Kind of integrated circuit: level shifter
Number of channels: 6
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS
Case: SO16
Kind of integrated circuit: level shifter
Number of channels: 6
на замовлення 1479 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.64 грн |
| 13+ | 32.88 грн |
| 14+ | 30.02 грн |
| 25+ | 27.34 грн |
| MC14504BDG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Number of outputs: 6
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Number of outputs: 6
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.25 грн |
| 12+ | 37.74 грн |
| MC14504BDTR2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Mounting: SMD
Number of channels: 6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Technology: CMOS
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Mounting: SMD
Number of channels: 6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Technology: CMOS
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Мінімальне замовлення: 2500 шт
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| MC14504BDTG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Mounting: SMD
Number of channels: 6
Technology: CMOS
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Mounting: SMD
Number of channels: 6
Technology: CMOS
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| J111-D74Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 20mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: Ammo Pack
Case: TO92
On-state resistance: 30Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 20mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: Ammo Pack
Case: TO92
On-state resistance: 30Ω
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| J111-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 20mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: tape
Case: TO92
On-state resistance: 30Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 20mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: tape
Case: TO92
On-state resistance: 30Ω
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| SZMMSZ3V3T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| MRS1504T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 1.02V
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 1.02V
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
на замовлення 1535 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.74 грн |
| 43+ | 9.90 грн |
| 45+ | 9.48 грн |
| 50+ | 8.97 грн |
| 100+ | 8.72 грн |
| 500+ | 8.64 грн |
| FAN7602CMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Kind of package: reel; tape
Supply voltage: 8...25V
Topology: flyback
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Kind of package: reel; tape
Supply voltage: 8...25V
Topology: flyback
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| FAN3100TSX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -2.5...1.8A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -2.5...1.8A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of output: non-inverting
на замовлення 1544 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.03 грн |
| 10+ | 45.37 грн |
| 25+ | 40.93 грн |






























