| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NCP81074BDR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC Supply voltage: 4.5...20V DC Operating temperature: -40...140°C Case: SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Mounting: SMD Output current: -10...10A Impulse rise time: 7ns Pulse fall time: 7ns Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP81075MNTXG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2 Supply voltage: 8.5...20V DC Operating temperature: -40...140°C Case: DFN8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Mounting: SMD Output current: -4...4A Impulse rise time: 8ns Pulse fall time: 7ns Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTHL041N60S5H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 32.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A Gate charge: 108nC |
на замовлення 128 шт: термін постачання 21-30 дні (днів) |
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FQT1N60CTF-WS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 6.2nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FQD1N60CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: DPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FQU1N60CTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 4A Gate charge: 6.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCH041N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48.7A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 231A Gate charge: 285nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCH041N60F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 228A Gate charge: 277nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCH041N60F-F085 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 228A Gate charge: 277nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HC153ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC Type of integrated circuit: digital Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 5 Technology: CMOS Manufacturer series: HC Family: HC Number of channels: 2 Kind of integrated circuit: data selector; multiplexer |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC74HC153ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC Type of integrated circuit: digital Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 5 Technology: CMOS Manufacturer series: HC Family: HC Number of channels: 2 Kind of integrated circuit: data selector; multiplexer |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC33164P-5G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: THT Operating temperature: -40...125°C Kind of RESET output: open collector DC supply current: 32µA Maximum output current: 50mA Supply voltage: 1...10V DC Threshold on-voltage: 4.33V Kind of package: bulk Case: TO92 Type of integrated circuit: supervisor circuit Number of channels: 1 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
на замовлення 1190 шт: термін постачання 21-30 дні (днів) |
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MC33161DR2G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Mounting: SMD Operating temperature: -40...105°C Kind of RESET output: open collector DC supply current: 560µA Maximum output current: 20mA Supply voltage: 2...40V DC Threshold on-voltage: 1.27V Kind of package: reel; tape Case: SO8 Type of integrated circuit: supervisor circuit Number of channels: 2 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
на замовлення 688 шт: термін постачання 21-30 дні (днів) |
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MC33172DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 2.1V/μs Bandwidth: 1.8MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: dual; 2 |
на замовлення 2155 шт: термін постачання 21-30 дні (днів) |
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MC33153DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Mounting: SMD Operating temperature: -40...105°C Protection: over current OCP; short circuit protection SCP; undervoltage UVP Impulse rise time: 55ns Pulse fall time: 55ns Output voltage: 2...13.9V Supply voltage: 11...20V DC Output current: -2...1A Kind of package: reel; tape Case: SO8 Type of integrated circuit: driver Number of channels: 1 Kind of integrated circuit: IGBT gate driver Kind of output: inverting |
на замовлення 2158 шт: термін постачання 21-30 дні (днів) |
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MC33171DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 2.1V/μs Bandwidth: 1.8MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: single; 1 |
на замовлення 658 шт: термін постачання 21-30 дні (днів) |
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MC33161DG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Mounting: SMD Operating temperature: -40...105°C Kind of RESET output: open collector DC supply current: 560µA Maximum output current: 20mA Supply voltage: 2...40V DC Threshold on-voltage: 1.27V Kind of package: tube Case: SO8 Type of integrated circuit: supervisor circuit Number of channels: 2 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
на замовлення 174 шт: термін постачання 21-30 дні (днів) |
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MC33152PG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Mounting: THT Operating temperature: -40...85°C Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Supply voltage: 6.1...18V DC Output current: -1.5...1.5A Kind of package: tube Case: DIP8 Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: MOSFET gate driver Kind of output: non-inverting |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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MC33164D-5G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: SMD Operating temperature: -40...125°C Kind of RESET output: open collector DC supply current: 32µA Maximum output current: 50mA Supply voltage: 1...10V DC Threshold on-voltage: 4.33V Kind of package: tube Case: SO8 Type of integrated circuit: supervisor circuit Number of channels: 1 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
на замовлення 253 шт: термін постачання 21-30 дні (днів) |
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MC33164D-3G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: SMD Operating temperature: -40...125°C Kind of RESET output: open collector DC supply current: 32µA Maximum output current: 30mA Supply voltage: 1...10V DC Threshold on-voltage: 2.71V Kind of package: tube Case: SO8 Type of integrated circuit: supervisor circuit Number of channels: 1 Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
на замовлення 294 шт: термін постачання 21-30 дні (днів) |
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MC33153PG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1 Mounting: SMD Operating temperature: -40...105°C Protection: over current OCP; short circuit protection SCP; undervoltage UVP Impulse rise time: 55ns Pulse fall time: 55ns Output voltage: 2...13.9V Supply voltage: 11...20V DC Output current: -2...1A Kind of package: tube Case: DIP8 Type of integrated circuit: driver Number of channels: 1 Topology: H-bridge Kind of integrated circuit: IGBT gate driver Kind of output: inverting |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
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MC33152DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Mounting: SMD Operating temperature: -40...85°C Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Supply voltage: 6.1...18V DC Output current: -1.5...1.5A Kind of package: reel; tape Case: SO8 Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: MOSFET gate driver Kind of output: non-inverting |
на замовлення 763 шт: термін постачання 21-30 дні (днів) |
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MC33152DG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Mounting: SMD Operating temperature: -40...85°C Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Supply voltage: 6.1...18V DC Output current: -1.5...1.5A Kind of package: tube Case: SO8 Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: MOSFET gate driver Kind of output: non-inverting |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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MC7815CD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape Kind of package: reel; tape Mounting: SMD Case: D2PAK Kind of voltage regulator: fixed; linear Type of integrated circuit: voltage regulator Output voltage: 15V Output current: 1A Number of channels: 1 |
на замовлення 1200 шт: термін постачання 21-30 дні (днів) |
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| NTD20N06T4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2477 шт: термін постачання 21-30 дні (днів) |
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| FDP020N06B-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 313A Pulsed drain current: 1252A Power dissipation: 333W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 206nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDPF320N06L | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 84A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 30.2nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTTFS020N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFS020N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFWS020N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMYS020N08LHTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 30A Pulsed drain current: 142A Power dissipation: 21W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTBG020N090SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 200nC On-state resistance: 27mΩ Power dissipation: 3.7W Drain current: 9.8A Pulsed drain current: 448A Drain-source voltage: 900V Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTHL020N090SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W Kind of package: tube Technology: SiC Mounting: THT Polarisation: unipolar Gate-source voltage: -10...19V Gate charge: 196nC On-state resistance: 28mΩ Power dissipation: 251W Drain current: 83A Pulsed drain current: 427A Drain-source voltage: 900V Case: TO247-3 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NVBG020N090SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 200nC On-state resistance: 27mΩ Power dissipation: 3.7W Drain current: 9.8A Pulsed drain current: 448A Drain-source voltage: 900V Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NVHL020N090SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Kind of package: tube Technology: SiC Mounting: THT Polarisation: unipolar Gate-source voltage: -10...19V Gate charge: 78nC On-state resistance: 28mΩ Power dissipation: 251W Drain current: 83A Pulsed drain current: 472A Drain-source voltage: 900V Case: TO247-3 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NVMYS021N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 131A Power dissipation: 9W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMYS021N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 131A Power dissipation: 9W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTHL023N065M3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 49A Power dissipation: 131W Case: TO247-3 Gate-source voltage: -8...22V On-state resistance: 37mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 218A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTH4L023N065M3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Power dissipation: 122W Case: TO247-4 Gate-source voltage: -8...22V On-state resistance: 37mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Pulsed drain current: 225A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTBL023N065M3S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; 650V; 77A; 312W; H-PSOF8L Type of transistor: N-MOSFET Technology: SiC Drain-source voltage: 650V Drain current: 77A Power dissipation: 312W Case: H-PSOF8L Gate-source voltage: -8...22V Mounting: SMD Gate charge: 69nC Kind of channel: enhancement |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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NTD24N06LT4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2455 шт: термін постачання 21-30 дні (днів) |
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| NUP4202W1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; SC88; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: bidirectional Mounting: SMD Case: SC88 Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
QRD1114 | ONSEMI |
Category: PCB Photoelectric SensorsDescription: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C |
на замовлення 128 шт: термін постачання 21-30 дні (днів) |
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BZX85C6V2 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 6.2V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 6.2V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCV47711PDAJR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8 Kind of package: reel; tape Case: SO8 Mounting: SMD Output current: 0.35A Number of channels: 1 Output voltage: 5...20V Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74LCX07MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP14; LCX Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: open drain Manufacturer series: LCX |
на замовлення 3431 шт: термін постачання 21-30 дні (днів) |
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74LCX245MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of output: 3-state Manufacturer series: LCX |
на замовлення 2021 шт: термін постачання 21-30 дні (днів) |
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74LCX14MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Quiescent current: 10µA Kind of input: with Schmitt trigger |
на замовлення 1313 шт: термін постачання 21-30 дні (днів) |
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74LCX00MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LCX Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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74LCX125MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of output: 3-state Manufacturer series: LCX |
на замовлення 950 шт: термін постачання 21-30 дні (днів) |
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74LCX08MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Quiescent current: 10µA |
на замовлення 1337 шт: термін постачання 21-30 дні (днів) |
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74LCX06MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Quiescent current: 10µA Kind of output: open drain |
на замовлення 1927 шт: термін постачання 21-30 дні (днів) |
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74LCX245MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 10µA Kind of output: 3-state Manufacturer series: LCX |
на замовлення 548 шт: термін постачання 21-30 дні (днів) |
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74LCX125MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Quiescent current: 10µA Kind of output: 3-state Manufacturer series: LCX |
на замовлення 368 шт: термін постачання 21-30 дні (днів) |
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74LCX541WMX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of output: 3-state Manufacturer series: LCX |
на замовлення 858 шт: термін постачання 21-30 дні (днів) |
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74LCX244WM | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 10µA Kind of output: 3-state Manufacturer series: LCX |
на замовлення 867 шт: термін постачання 21-30 дні (днів) |
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74LCX38MTC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX Quiescent current: 10µA Kind of output: open drain |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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74LCX32MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Quiescent current: 10µA |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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74LCX126MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LCX Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: LCX |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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| NCP81074BDR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Supply voltage: 4.5...20V DC
Operating temperature: -40...140°C
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Output current: -10...10A
Impulse rise time: 7ns
Pulse fall time: 7ns
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Supply voltage: 4.5...20V DC
Operating temperature: -40...140°C
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Output current: -10...10A
Impulse rise time: 7ns
Pulse fall time: 7ns
Number of channels: 1
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| NCP81075MNTXG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Supply voltage: 8.5...20V DC
Operating temperature: -40...140°C
Case: DFN8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Mounting: SMD
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Supply voltage: 8.5...20V DC
Operating temperature: -40...140°C
Case: DFN8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Mounting: SMD
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
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| NTHL041N60S5H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
на замовлення 128 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 583.88 грн |
| FQT1N60CTF-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.2nC
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| FQD1N60CTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FQU1N60CTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
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| FCH041N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
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| FCH041N60F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
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| FCH041N60F-F085 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
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| MC74HC153ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
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| MC74HC153ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
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| MC33164P-5G | ![]() |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: THT
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: bulk
Case: TO92
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: THT
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: bulk
Case: TO92
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
на замовлення 1190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.83 грн |
| MC33161DR2G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 2
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 2
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
на замовлення 688 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.76 грн |
| 10+ | 48.61 грн |
| MC33172DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Bandwidth: 1.8MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Bandwidth: 1.8MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
на замовлення 2155 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 19+ | 22.25 грн |
| 21+ | 19.69 грн |
| 25+ | 16.97 грн |
| 50+ | 15.41 грн |
| 100+ | 14.25 грн |
| 250+ | 13.10 грн |
| 500+ | 12.52 грн |
| MC33153DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Supply voltage: 11...20V DC
Output current: -2...1A
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Supply voltage: 11...20V DC
Output current: -2...1A
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
на замовлення 2158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.96 грн |
| 10+ | 100.52 грн |
| 25+ | 92.28 грн |
| 50+ | 89.81 грн |
| MC33171DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Bandwidth: 1.8MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Bandwidth: 1.8MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
на замовлення 658 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.06 грн |
| MC33161DG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 2
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 2
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
на замовлення 174 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.34 грн |
| 10+ | 51.09 грн |
| MC33152PG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
на замовлення 86 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.95 грн |
| 6+ | 78.28 грн |
| 10+ | 70.86 грн |
| 25+ | 65.92 грн |
| MC33164D-5G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
на замовлення 253 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.59 грн |
| 15+ | 27.93 грн |
| 25+ | 24.97 грн |
| MC33164D-3G | ![]() |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 30mA
Supply voltage: 1...10V DC
Threshold on-voltage: 2.71V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 30mA
Supply voltage: 1...10V DC
Threshold on-voltage: 2.71V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Number of channels: 1
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
на замовлення 294 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.35 грн |
| 13+ | 34.03 грн |
| 25+ | 30.07 грн |
| MC33153PG | ![]() |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Supply voltage: 11...20V DC
Output current: -2...1A
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Number of channels: 1
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Supply voltage: 11...20V DC
Output current: -2...1A
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Number of channels: 1
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver
Kind of output: inverting
на замовлення 144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.33 грн |
| 10+ | 55.21 грн |
| 25+ | 53.56 грн |
| MC33152DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
на замовлення 763 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.97 грн |
| 10+ | 52.73 грн |
| 25+ | 51.91 грн |
| MC33152DG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.1...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: non-inverting
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.42 грн |
| 10+ | 65.09 грн |
| MC7815CD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.04 грн |
| 15+ | 27.77 грн |
| NTD20N06T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2477 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.31 грн |
| 5+ | 106.29 грн |
| 10+ | 93.93 грн |
| 50+ | 66.74 грн |
| 100+ | 58.50 грн |
| 200+ | 54.38 грн |
| FDP020N06B-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 313A
Pulsed drain current: 1252A
Power dissipation: 333W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 206nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 313A
Pulsed drain current: 1252A
Power dissipation: 333W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 206nC
Kind of package: tube
Kind of channel: enhancement
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| NTDV20N06T4G-VF01 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDPF320N06L |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| NTTFS020N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS020N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS020N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMYS020N08LHTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 30A
Pulsed drain current: 142A
Power dissipation: 21W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 30A
Pulsed drain current: 142A
Power dissipation: 21W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTBG020N090SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| NTHL020N090SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Kind of package: tube
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...19V
Gate charge: 196nC
On-state resistance: 28mΩ
Power dissipation: 251W
Drain current: 83A
Pulsed drain current: 427A
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Kind of package: tube
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...19V
Gate charge: 196nC
On-state resistance: 28mΩ
Power dissipation: 251W
Drain current: 83A
Pulsed drain current: 427A
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NVBG020N090SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| NVHL020N090SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Kind of package: tube
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...19V
Gate charge: 78nC
On-state resistance: 28mΩ
Power dissipation: 251W
Drain current: 83A
Pulsed drain current: 472A
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Kind of package: tube
Technology: SiC
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...19V
Gate charge: 78nC
On-state resistance: 28mΩ
Power dissipation: 251W
Drain current: 83A
Pulsed drain current: 472A
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NVMYS021N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 131A
Power dissipation: 9W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 131A
Power dissipation: 9W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMYS021N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 131A
Power dissipation: 9W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 131A; 9W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 131A
Power dissipation: 9W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTHL023N065M3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Power dissipation: 131W
Case: TO247-3
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 218A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Power dissipation: 131W
Case: TO247-3
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 218A
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| NTH4L023N065M3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 122W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 225A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 122W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 225A
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| NTBL023N065M3S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 650V; 77A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 650V
Drain current: 77A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 69nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 650V; 77A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 650V
Drain current: 77A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 69nC
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 827.01 грн |
| NTD24N06LT4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2455 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.56 грн |
| 10+ | 42.02 грн |
| 25+ | 35.51 грн |
| 40+ | 34.11 грн |
| 100+ | 32.63 грн |
| 200+ | 31.97 грн |
| NUP4202W1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Number of channels: 4
Kind of package: reel; tape
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| QRD1114 | ![]() |
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Виробник: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
на замовлення 128 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.46 грн |
| 10+ | 90.64 грн |
| BZX85C6V2 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.2V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.2V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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| NCV47711PDAJR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
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| 74LCX07MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP14; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: open drain
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP14; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: open drain
Manufacturer series: LCX
на замовлення 3431 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.18 грн |
| 25+ | 16.64 грн |
| 28+ | 14.83 грн |
| 33+ | 12.61 грн |
| 100+ | 11.54 грн |
| 74LCX245MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
на замовлення 2021 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.35 грн |
| 13+ | 33.21 грн |
| 25+ | 28.10 грн |
| 100+ | 23.07 грн |
| 74LCX14MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Kind of input: with Schmitt trigger
на замовлення 1313 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.80 грн |
| 17+ | 25.54 грн |
| 19+ | 22.41 грн |
| 75+ | 21.67 грн |
| 74LCX00MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.18 грн |
| 26+ | 16.31 грн |
| 29+ | 14.58 грн |
| 33+ | 12.52 грн |
| 100+ | 11.54 грн |
| 250+ | 11.12 грн |
| 74LCX125MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
на замовлення 950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.75 грн |
| 30+ | 14.17 грн |
| 31+ | 13.60 грн |
| 74LCX08MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
на замовлення 1337 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 20+ | 21.09 грн |
| 22+ | 18.87 грн |
| 25+ | 16.48 грн |
| 100+ | 15.57 грн |
| 74LCX06MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Kind of output: open drain
на замовлення 1927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.71 грн |
| 18+ | 24.06 грн |
| 25+ | 20.60 грн |
| 100+ | 16.40 грн |
| 250+ | 14.25 грн |
| 1000+ | 11.95 грн |
| 74LCX245MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
на замовлення 548 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.04 грн |
| 74LCX125MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
на замовлення 368 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.63 грн |
| 36+ | 11.54 грн |
| 38+ | 10.88 грн |
| 50+ | 10.79 грн |
| 74LCX541WMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
на замовлення 858 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.55 грн |
| 10+ | 54.38 грн |
| 74LCX244WM |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
на замовлення 867 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.64 грн |
| 10+ | 54.38 грн |
| 25+ | 50.26 грн |
| 38+ | 47.79 грн |
| 114+ | 45.32 грн |
| 74LCX38MTC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Kind of output: open drain
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.02 грн |
| 12+ | 35.68 грн |
| 25+ | 30.82 грн |
| 94+ | 26.12 грн |
| 282+ | 22.99 грн |
| 74LCX32MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 20+ | 21.09 грн |
| 23+ | 18.70 грн |
| 25+ | 17.80 грн |
| 74LCX126MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: LCX
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 25+ | 16.64 грн |




















