Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104261) > Сторінка 1733 з 1738
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2SD2673TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 30V; 3A; 500mW; SC96 Case: SC96 Collector-emitter voltage: 30V Current gain: 270...680 Polarisation: bipolar Frequency: 200MHz Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 3A Power dissipation: 0.5W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SD2652T106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 12V; 1.5A; 200mW; SC70,SOT323 Case: SC70; SOT323 Collector-emitter voltage: 12V Current gain: 270...680 Polarisation: bipolar Frequency: 400MHz Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 1.5A Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SD2653KT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 12V; 2A; 200mW; SC59,SOT346 Case: SC59; SOT346 Collector-emitter voltage: 12V Current gain: 270...680 Polarisation: bipolar Frequency: 360MHz Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 2A Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
2SD2654TLV | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SC75A,SOT416 Case: SC75A; SOT416 Collector-emitter voltage: 50V Current gain: 820...1800 Polarisation: bipolar Frequency: 250MHz Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.15A Power dissipation: 0.15W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SD2656T106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 30V; 1A; 200mW; SC70,SOT323 Case: SC70; SOT323 Collector-emitter voltage: 30V Current gain: 270...680 Polarisation: bipolar Frequency: 400MHz Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 1A Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
2SD2701TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 30V; 1.5A; 400mW; SOT323F Case: SOT323F Collector-emitter voltage: 30V Current gain: 270...680 Polarisation: bipolar Frequency: 300MHz Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 1.5A Power dissipation: 0.4W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
2SD2707T2LV | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SOT723 Case: SOT723 Collector-emitter voltage: 50V Current gain: 820...1800 Polarisation: bipolar Frequency: 250MHz Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.15A Power dissipation: 0.15W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RB238NS150FHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; D2PAK,SC83,TO263S; SMD; 150V; 20Ax2 Type of diode: Schottky rectifying Case: D2PAK; SC83; TO263S Mounting: SMD Max. off-state voltage: 150V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.87V Leakage current: 30µA Max. forward impulse current: 100A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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UMH3NFHATN | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UMH3NTN | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
SCT2160KEGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 22A Pulsed drain current: 55A Power dissipation: 165W Case: TO247 Gate-source voltage: -6...22V On-state resistance: 208mΩ Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCT2280KEGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 14A Pulsed drain current: 35A Power dissipation: 108W Case: TO247 Gate-source voltage: -6...22V On-state resistance: 364mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SH8M41GZETB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 80/-80V Drain current: 3.4/-2.6A Pulsed drain current: 10.4...13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160/310mΩ Mounting: SMD Gate charge: 6.6/8.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SML-020MVTT86 | ROHM SEMICONDUCTOR |
![]() Description: LED; red,green; SMD; 1210; 20mcd; 100°; 20mA; Lens: transparent Type of diode: LED LED colour: green; red Mounting: SMD Luminosity: 20mcd Viewing angle: 100° LED current: 20mA LED lens: transparent Front: flat Case: 1210 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DTC143ZMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
на замовлення 23457 шт: термін постачання 21-30 дні (днів) |
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DTC143TCAT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Current gain: 100...600 |
на замовлення 4046 шт: термін постачання 21-30 дні (днів) |
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DTC143TMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Current gain: 100...600 |
на замовлення 945 шт: термін постачання 21-30 дні (днів) |
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DTC143ECAT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 30 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC143ZCAT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC143EKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 30 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC143TU3T106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Current gain: 100...600 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC143ZKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
DTC143ZEBTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DTC143ZETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DTC143ZMFHAT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RSH065N06GZETB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSH065N06TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
BU4813G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Manufacturer series: BU48 Operating temperature: -40...125°C Mounting: SMD Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 1.3V Case: SSOP5 Integrated circuit features: ±1% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DTB113ECT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: PNP Collector current: 0.5A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 1kΩ Kind of package: reel; tape Frequency: 200MHz Polarisation: bipolar Kind of transistor: BRT Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTB113EKT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Mounting: SMD Type of transistor: PNP Collector current: 0.5A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 1kΩ Kind of package: reel; tape Frequency: 200MHz Polarisation: bipolar Kind of transistor: BRT Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTD113ECT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: NPN Collector current: 0.5A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 1kΩ Kind of package: reel; tape Frequency: 200MHz Polarisation: bipolar Kind of transistor: BRT Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTD113EKT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Mounting: SMD Type of transistor: NPN Collector current: 0.5A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 1kΩ Kind of package: reel; tape Frequency: 200MHz Polarisation: bipolar Kind of transistor: BRT Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
DTA124XMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ Mounting: SMD Kind of transistor: BRT Case: SOT723 Type of transistor: PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Current gain: 68 Base resistor: 22kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX84C8V2LYT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.7µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84B8V2LYT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.7µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84C8V2LYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.7µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
SMLP34RGBN1W3 | ROHM SEMICONDUCTOR |
![]() Description: LED; red,blue,green; SMD; 10mA; Lens: white; Front: flat LED current: 10mA Type of diode: LED Front: flat LED lens: white LED colour: blue; green; red Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RCX450N20 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 45A Pulsed drain current: 180A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SML-P24MUWT86R | ROHM SEMICONDUCTOR |
![]() Description: LED; red,green; SMD; 0404; 20mA; Lens: diffused,transparent Type of diode: LED LED colour: green; red Mounting: SMD Front: flat LED current: 20mA LED lens: diffused; transparent Case: 0404 |
на замовлення 3700 шт: термін постачання 21-30 дні (днів) |
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CSL0416WBCW1 | ROHM SEMICONDUCTOR |
![]() Description: LED; white; SMD; 2200mcd; 20mA Type of diode: LED LED colour: white Mounting: SMD LED current: 20mA Luminosity: 2200mcd |
на замовлення 640 шт: термін постачання 21-30 дні (днів) |
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2SCR586D3TL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 10W Case: DPAK; TO252 Current gain: 120...390 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 565 шт: термін постачання 21-30 дні (днів) |
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2SCR542PFRAT100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 30V; 5A; 500mW; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 5A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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BD82065FVJ-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; high-side; 2.1A; Ch: 1; N-Channel; SMD; TSSOP-B8J Operating temperature: -40...85°C Case: TSSOP-B8J Mounting: SMD Active logical level: high Kind of integrated circuit: high-side Kind of output: N-Channel Protection: over current OCP; overheating OTP; undervoltage UVP Type of integrated circuit: power switch On-state resistance: 0.11Ω Number of channels: 1 Output current: 2.1A Supply voltage: 2.7...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RSH070P05GZETB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSH070P05TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
EMX1GT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
EMX18T2R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SOT563 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
EMX1FHAT2R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
EMX1T2R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RB021VAM90TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 0.9mA Load current: 0.2A Max. forward voltage: 0.49V Max. forward impulse current: 5A Max. off-state voltage: 90V Case: SOD323HE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BD4924FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Supply voltage: 950mV DC...10V DC Operating temperature: -40...105°C Integrated circuit features: ±1% accuracy Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.4V Case: VSOF5 Manufacturer series: BD49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BD4924G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Supply voltage: 950mV DC...10V DC Operating temperature: -40...105°C Integrated circuit features: ±1% accuracy Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.4V Case: SSOP5 Manufacturer series: BD49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BU4924G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Supply voltage: 700mV DC...7V DC Operating temperature: -40...125°C Integrated circuit features: ±1% accuracy Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.4V Case: SSOP5 Manufacturer series: BU49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RGS00TS65DHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 163W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 58nC Kind of package: tube Turn-on time: 70ns Turn-off time: 292ns Features of semiconductor devices: integrated anti-parallel diode |
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В кошику од. на суму грн. | |||||||||||||
RB225T-60HZC9 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; ITO220AB,TO220FN Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: ITO220AB; TO220FN Max. forward voltage: 0.63V Max. forward impulse current: 100A Leakage current: 0.6mA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RGT40NS65DGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 20A; 70W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 70W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Turn-on time: 51ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode |
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В кошику од. на суму грн. | |||||||||||||
RGTH40TS65DGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 72W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 40nC Kind of package: tube Turn-on time: 47ns Turn-off time: 141ns Features of semiconductor devices: integrated anti-parallel diode |
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В кошику од. на суму грн. | |||||||||||||
RGTH40TS65GC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 72W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 40nC Kind of package: tube Turn-on time: 47ns Turn-off time: 141ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RGTV60TK65DGVC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 20A; 38W; TO3PFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 38W Case: TO3PFM Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 45ns Turn-off time: 201ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BD4958FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD49 Integrated circuit features: ±1% accuracy Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Type of integrated circuit: supervisor circuit Case: VSOF5 Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 5.8V |
товару немає в наявності |
В кошику од. на суму грн. |
2SD2673TL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 500mW; SC96
Case: SC96
Collector-emitter voltage: 30V
Current gain: 270...680
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Power dissipation: 0.5W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 500mW; SC96
Case: SC96
Collector-emitter voltage: 30V
Current gain: 270...680
Polarisation: bipolar
Frequency: 200MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Power dissipation: 0.5W
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од. на суму грн.
2SD2652T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 1.5A; 200mW; SC70,SOT323
Case: SC70; SOT323
Collector-emitter voltage: 12V
Current gain: 270...680
Polarisation: bipolar
Frequency: 400MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 1.5A; 200mW; SC70,SOT323
Case: SC70; SOT323
Collector-emitter voltage: 12V
Current gain: 270...680
Polarisation: bipolar
Frequency: 400MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.2W
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од. на суму грн.
2SD2653KT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 2A; 200mW; SC59,SOT346
Case: SC59; SOT346
Collector-emitter voltage: 12V
Current gain: 270...680
Polarisation: bipolar
Frequency: 360MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 2A
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 2A; 200mW; SC59,SOT346
Case: SC59; SOT346
Collector-emitter voltage: 12V
Current gain: 270...680
Polarisation: bipolar
Frequency: 360MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 2A
Power dissipation: 0.2W
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В кошику
од. на суму грн.
2SD2654TLV |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SC75A,SOT416
Case: SC75A; SOT416
Collector-emitter voltage: 50V
Current gain: 820...1800
Polarisation: bipolar
Frequency: 250MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.15W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SC75A,SOT416
Case: SC75A; SOT416
Collector-emitter voltage: 50V
Current gain: 820...1800
Polarisation: bipolar
Frequency: 250MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.15W
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В кошику
од. на суму грн.
2SD2656T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 200mW; SC70,SOT323
Case: SC70; SOT323
Collector-emitter voltage: 30V
Current gain: 270...680
Polarisation: bipolar
Frequency: 400MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 1A
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 200mW; SC70,SOT323
Case: SC70; SOT323
Collector-emitter voltage: 30V
Current gain: 270...680
Polarisation: bipolar
Frequency: 400MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 1A
Power dissipation: 0.2W
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од. на суму грн.
2SD2701TL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1.5A; 400mW; SOT323F
Case: SOT323F
Collector-emitter voltage: 30V
Current gain: 270...680
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.4W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1.5A; 400mW; SOT323F
Case: SOT323F
Collector-emitter voltage: 30V
Current gain: 270...680
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.4W
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В кошику
од. на суму грн.
2SD2707T2LV |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SOT723
Case: SOT723
Collector-emitter voltage: 50V
Current gain: 820...1800
Polarisation: bipolar
Frequency: 250MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.15W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SOT723
Case: SOT723
Collector-emitter voltage: 50V
Current gain: 820...1800
Polarisation: bipolar
Frequency: 250MHz
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.15W
товару немає в наявності
В кошику
од. на суму грн.
RB238NS150FHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,SC83,TO263S; SMD; 150V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; SC83; TO263S
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Leakage current: 30µA
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,SC83,TO263S; SMD; 150V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; SC83; TO263S
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Leakage current: 30µA
Max. forward impulse current: 100A
Kind of package: reel; tape
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од. на суму грн.
UMH3NFHATN |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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UMH3NTN |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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SCT2160KEGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 22A
Pulsed drain current: 55A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -6...22V
On-state resistance: 208mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 22A
Pulsed drain current: 55A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -6...22V
On-state resistance: 208mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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SCT2280KEGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Pulsed drain current: 35A
Power dissipation: 108W
Case: TO247
Gate-source voltage: -6...22V
On-state resistance: 364mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Pulsed drain current: 35A
Power dissipation: 108W
Case: TO247
Gate-source voltage: -6...22V
On-state resistance: 364mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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SH8M41GZETB |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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SML-020MVTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red,green; SMD; 1210; 20mcd; 100°; 20mA; Lens: transparent
Type of diode: LED
LED colour: green; red
Mounting: SMD
Luminosity: 20mcd
Viewing angle: 100°
LED current: 20mA
LED lens: transparent
Front: flat
Case: 1210
Category: SMD colour LEDs
Description: LED; red,green; SMD; 1210; 20mcd; 100°; 20mA; Lens: transparent
Type of diode: LED
LED colour: green; red
Mounting: SMD
Luminosity: 20mcd
Viewing angle: 100°
LED current: 20mA
LED lens: transparent
Front: flat
Case: 1210
товару немає в наявності
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од. на суму грн.
DTC143ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
на замовлення 23457 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.58 грн |
40+ | 10.04 грн |
100+ | 6.39 грн |
427+ | 2.16 грн |
1173+ | 2.04 грн |
DTC143TCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Current gain: 100...600
на замовлення 4046 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.29 грн |
60+ | 6.59 грн |
100+ | 4.11 грн |
500+ | 3.03 грн |
519+ | 1.77 грн |
1424+ | 1.68 грн |
DTC143TMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Current gain: 100...600
на замовлення 945 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
63+ | 6.76 грн |
103+ | 3.84 грн |
137+ | 2.87 грн |
445+ | 2.07 грн |
DTC143ECAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
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DTC143ZCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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DTC143EKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
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DTC143TU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Current gain: 100...600
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DTC143ZKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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DTC143ZEBTL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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DTC143ZETL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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DTC143ZMFHAT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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RSH065N06GZETB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSH065N06TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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BU4813G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.3V
Case: SSOP5
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.3V
Case: SSOP5
Integrated circuit features: ±1% accuracy
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DTB113ECT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
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DTB113EKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59; SOT346
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DTD113ECT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
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DTD113EKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59; SOT346
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DTA124XMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Mounting: SMD
Kind of transistor: BRT
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 68
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Mounting: SMD
Kind of transistor: BRT
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 68
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
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BZX84C8V2LYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.7µA
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BZX84B8V2LYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.7µA
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BZX84C8V2LYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.7µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.7µA
Application: automotive industry
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SMLP34RGBN1W3 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red,blue,green; SMD; 10mA; Lens: white; Front: flat
LED current: 10mA
Type of diode: LED
Front: flat
LED lens: white
LED colour: blue; green; red
Mounting: SMD
Category: SMD colour LEDs
Description: LED; red,blue,green; SMD; 10mA; Lens: white; Front: flat
LED current: 10mA
Type of diode: LED
Front: flat
LED lens: white
LED colour: blue; green; red
Mounting: SMD
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RCX450N20 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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SML-P24MUWT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red,green; SMD; 0404; 20mA; Lens: diffused,transparent
Type of diode: LED
LED colour: green; red
Mounting: SMD
Front: flat
LED current: 20mA
LED lens: diffused; transparent
Case: 0404
Category: SMD colour LEDs
Description: LED; red,green; SMD; 0404; 20mA; Lens: diffused,transparent
Type of diode: LED
LED colour: green; red
Mounting: SMD
Front: flat
LED current: 20mA
LED lens: diffused; transparent
Case: 0404
на замовлення 3700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.69 грн |
15+ | 26.90 грн |
25+ | 21.80 грн |
84+ | 11.06 грн |
230+ | 10.43 грн |
CSL0416WBCW1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD white LEDs
Description: LED; white; SMD; 2200mcd; 20mA
Type of diode: LED
LED colour: white
Mounting: SMD
LED current: 20mA
Luminosity: 2200mcd
Category: SMD white LEDs
Description: LED; white; SMD; 2200mcd; 20mA
Type of diode: LED
LED colour: white
Mounting: SMD
LED current: 20mA
Luminosity: 2200mcd
на замовлення 640 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 103.87 грн |
10+ | 72.61 грн |
25+ | 63.67 грн |
36+ | 25.72 грн |
50+ | 25.64 грн |
99+ | 24.31 грн |
2SCR586D3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 565 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.62 грн |
10+ | 46.03 грн |
25+ | 41.25 грн |
34+ | 27.52 грн |
93+ | 26.03 грн |
2SCR542PFRAT100 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 5A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 5A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.65 грн |
12+ | 35.60 грн |
47+ | 19.92 грн |
128+ | 18.90 грн |
500+ | 18.19 грн |
BD82065FVJ-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; N-Channel; SMD; TSSOP-B8J
Operating temperature: -40...85°C
Case: TSSOP-B8J
Mounting: SMD
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
Protection: over current OCP; overheating OTP; undervoltage UVP
Type of integrated circuit: power switch
On-state resistance: 0.11Ω
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; N-Channel; SMD; TSSOP-B8J
Operating temperature: -40...85°C
Case: TSSOP-B8J
Mounting: SMD
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
Protection: over current OCP; overheating OTP; undervoltage UVP
Type of integrated circuit: power switch
On-state resistance: 0.11Ω
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V
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RSH070P05GZETB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSH070P05TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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EMX1GT2R |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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EMX18T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
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EMX1FHAT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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EMX1T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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RB021VAM90TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.9mA
Load current: 0.2A
Max. forward voltage: 0.49V
Max. forward impulse current: 5A
Max. off-state voltage: 90V
Case: SOD323HE
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.9mA
Load current: 0.2A
Max. forward voltage: 0.49V
Max. forward impulse current: 5A
Max. off-state voltage: 90V
Case: SOD323HE
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BD4924FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Supply voltage: 950mV DC...10V DC
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.4V
Case: VSOF5
Manufacturer series: BD49
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Supply voltage: 950mV DC...10V DC
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.4V
Case: VSOF5
Manufacturer series: BD49
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BD4924G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Supply voltage: 950mV DC...10V DC
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.4V
Case: SSOP5
Manufacturer series: BD49
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Supply voltage: 950mV DC...10V DC
Operating temperature: -40...105°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.4V
Case: SSOP5
Manufacturer series: BD49
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BU4924G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Supply voltage: 700mV DC...7V DC
Operating temperature: -40...125°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.4V
Case: SSOP5
Manufacturer series: BU49
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Supply voltage: 700mV DC...7V DC
Operating temperature: -40...125°C
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.4V
Case: SSOP5
Manufacturer series: BU49
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RGS00TS65DHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
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RB225T-60HZC9 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; ITO220AB,TO220FN
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: ITO220AB; TO220FN
Max. forward voltage: 0.63V
Max. forward impulse current: 100A
Leakage current: 0.6mA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; ITO220AB,TO220FN
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: ITO220AB; TO220FN
Max. forward voltage: 0.63V
Max. forward impulse current: 100A
Leakage current: 0.6mA
Kind of package: tube
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RGT40NS65DGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 70W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 70W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Turn-on time: 51ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 70W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 70W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Turn-on time: 51ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
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RGTH40TS65DGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 72W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 141ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 72W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 141ns
Features of semiconductor devices: integrated anti-parallel diode
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RGTH40TS65GC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 72W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 141ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 72W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 141ns
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RGTV60TK65DGVC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 38W; TO3PFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 38W
Case: TO3PFM
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 201ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 38W; TO3PFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 38W
Case: TO3PFM
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 201ns
Features of semiconductor devices: integrated anti-parallel diode
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BD4958FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Type of integrated circuit: supervisor circuit
Case: VSOF5
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 5.8V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Type of integrated circuit: supervisor circuit
Case: VSOF5
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 5.8V
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