Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104025) > Сторінка 1733 з 1734
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BD9G341AEFJ-E2 | ROHM SEMICONDUCTOR |
 Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: HTSSOP8 Mounting: SMD Operating temperature: -40...85°C Topology: buck Kind of package: reel; tape Number of channels: 1 Output voltage: 1...76V DC Output current: 3A Input voltage: 12...76V DC Frequency: 750kHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTB113EKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BD5466GUL-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Ch: 1; Amp.class: D Type of integrated circuit: audio amplifier Number of channels: 1 Amplifier class: D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BA33BC0WFP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 3.3V Output current: 1A Case: TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...16V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BA33BC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 3.3V Output current: 1A Case: TO252-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...16V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BA33BC0T | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO220FP; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 3.3V Output current: 1A Case: TO220FP Mounting: THT Kind of package: tube Operating temperature: -40...105°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...16V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RSJ650N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Pulsed drain current: 130A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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DTC143TKAT146 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC124EKAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Kind of package: reel; tape |
на замовлення 202 шт: термін постачання 14-30 дні (днів) |
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| BD4849G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Case: SSOP5 Mounting: SMD Kind of package: reel; tape Active logical level: low Kind of RESET output: open drain Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 4.9V Integrated circuit features: ±1% accuracy Manufacturer series: BD48 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BZX84B18VLYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 18V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SCS210AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 10A; reel,tape Mounting: SMD Case: TO263AB Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Load current: 10A Power dissipation: 83W Max. forward voltage: 1.55V Max. forward impulse current: 150A Max. load current: 45A Max. off-state voltage: 650V Kind of package: reel; tape |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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SCT2450KEC | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247 Technology: SiC Case: TO247 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -6...22V Gate charge: 27nC On-state resistance: 0.45Ω Drain current: 7A Pulsed drain current: 25A Power dissipation: 85W Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCT2080KEGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 80A; 262W Mounting: THT Case: TO247 Kind of package: tube Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Gate-source voltage: -6...22V Gate charge: 106nC On-state resistance: 0.117Ω Drain current: 40A Pulsed drain current: 80A Power dissipation: 262W Drain-source voltage: 1.2kV Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BD82034FVJ-GE2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; TSSOP-B8J Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TSSOP-B8J On-state resistance: 0.105Ω Active logical level: high Operating temperature: -40...85°C Supply voltage: 4.5...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RB501SM-30FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 0.35V Max. forward impulse current: 1A Kind of package: reel; tape Leakage current: 10µA |
на замовлення 4870 шт: термін постачання 14-30 дні (днів) |
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RB520SM-40T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.55V Leakage current: 10µA Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 7271 шт: термін постачання 14-30 дні (днів) |
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RB520SM-30FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.58V Leakage current: 1µA Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 3814 шт: термін постачання 14-30 дні (днів) |
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DTC144EKAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
на замовлення 951 шт: термін постачання 14-30 дні (днів) |
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DTC144ECAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DTC144EEBTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC89 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC144EMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DTC144ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC144EETL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DTC144EMFHAT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DTC144EU3HZGT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 2W; SC70,SOT323; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC144EU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC144GUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC144TUAFRAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Current gain: 100...600 |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||||||
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DTC144TUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Current gain: 100...600 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC144WUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 22kΩ Current gain: 56 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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UMB10NFHATN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Mounting: SMD Frequency: 250MHz Current gain: 80 Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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UMB10NTN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Mounting: SMD Frequency: 250MHz Current gain: 80 Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RUC002N05T116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 800A Power dissipation: 0.35W Case: SST3 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RUM002N05T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±8V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 8285 шт: термін постачання 14-30 дні (днів) |
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RU1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT323F Gate-source voltage: ±8V On-state resistance: 3.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2377 шт: термін постачання 14-30 дні (днів) |
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RE1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT416F Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 456 шт: термін постачання 14-30 дні (днів) |
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UM6K33NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2647 шт: термін постачання 14-30 дні (днів) |
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RF4E100AJTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13nC On-state resistance: 12.4mΩ Drain current: 10A Pulsed drain current: 36A Gate-source voltage: ±12V Drain-source voltage: 30V |
на замовлення 2780 шт: термін постачання 14-30 дні (днів) |
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RF4E080GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.8nC On-state resistance: 17.6mΩ Drain current: 8A Pulsed drain current: 32A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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RF4E080BNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 14.5nC On-state resistance: 17.6mΩ Drain current: 8A Pulsed drain current: 32A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 2953 шт: термін постачання 14-30 дні (днів) |
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SCS212AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; 93W; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Case: TO220AC Mounting: THT Max. forward voltage: 1.55V Load current: 12A Max. forward impulse current: 170A Max. load current: 52A Power dissipation: 93W Max. off-state voltage: 650V |
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В кошику од. на суму грн. | ||||||||||||||||||
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SCS112AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 48A Max. forward impulse current: 167A Power dissipation: 93W Kind of package: tube Heatsink thickness: max. 1.27mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCT3120ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 Case: TO247 Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Technology: SiC Polarisation: unipolar Pulsed drain current: 52A Drain current: 21A Drain-source voltage: 650V Gate-source voltage: -4...22V Gate charge: 38nC On-state resistance: 156mΩ Power dissipation: 103W Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
 |
SCS220AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W Case: TO220FP-2 Mounting: THT Technology: SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 20A Max. forward voltage: 1.55V Max. forward impulse current: 260A Power dissipation: 40W Max. load current: 41A Max. off-state voltage: 650V Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||||||
 |
BA10393F-E2 | ROHM SEMICONDUCTOR |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA Mounting: SMT Operating temperature: -40...85°C Type of integrated circuit: comparator Kind of output: open collector Kind of package: reel; tape Case: SO8 Kind of comparator: universal Input offset current: 50nA Input offset voltage: 5mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 |
на замовлення 2046 шт: термін постачання 14-30 дні (днів) |
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| US6X7TR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 1.5A; 400mW Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 12V Collector current: 1.5A Power dissipation: 0.4W Case: SOT363T Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
 |
RQ3E120ATTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8 Kind of package: reel; tape Mounting: SMD Pulsed drain current: -48A Drain current: -39A Drain-source voltage: -30V Gate charge: 62nC On-state resistance: 11.3mΩ Power dissipation: 20W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Case: HSMT8 Type of transistor: P-MOSFET |
на замовлення 2941 шт: термін постачання 14-30 дні (днів) |
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RFC02MM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 35ns Load current: 0.2A Max. forward voltage: 0.95V Max. forward impulse current: 10A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SCS215AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 15A Max. forward voltage: 1.55V Power dissipation: 39W Max. forward impulse current: 200A Max. off-state voltage: 650V Max. load current: 36A Kind of package: tube Case: TO220FP-2 Technology: SiC Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCS315AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 0.3mA Load current: 15A Max. forward voltage: 1.71V Power dissipation: 39W Max. forward impulse current: 410A Max. off-state voltage: 650V Max. load current: 39A Kind of package: tube Case: TO220FP-2 Technology: SiC Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCS210AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W Power dissipation: 34W Case: TO220FP-2 Technology: SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Load current: 10A Max. forward voltage: 1.55V Max. load current: 28A Max. off-state voltage: 650V Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCS310AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W Power dissipation: 34W Case: TO220FP-2 Technology: SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Leakage current: 0.2mA Load current: 10A Max. forward voltage: 1.71V Max. load current: 30A Max. off-state voltage: 650V Max. forward impulse current: 0.3kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1G201ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain current: -78A Drain-source voltage: -40V Gate charge: 130nC On-state resistance: 6.5mΩ Power dissipation: 40W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| RS1G260MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 104A Drain current: 80A Drain-source voltage: 40V Gate charge: 44nC On-state resistance: 4.4mΩ Power dissipation: 35W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| RS1G120MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 48A Drain current: 34A Drain-source voltage: 40V Gate charge: 9.4nC On-state resistance: 20.7mΩ Power dissipation: 25W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1G150MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 60A Drain current: 43A Drain-source voltage: 40V Gate charge: 15nC On-state resistance: 13.3mΩ Power dissipation: 25W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1G180MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 72A Drain current: 57A Drain-source voltage: 40V Gate charge: 19.5nC On-state resistance: 9.2mΩ Power dissipation: 30W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1G300GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 120A Drain current: 80A Drain-source voltage: 40V Gate charge: 56.8nC On-state resistance: 3mΩ Power dissipation: 35W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| SML-P13FTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; green; SMD; 0402; 18mcd; 20mA; 566nm; Lens: transparent Type of diode: LED LED colour: green Mounting: SMD Case - inch: 0402 Luminosity: 18mcd LED current: 20mA Wavelength: 566nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. |
| BD9G341AEFJ-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: HTSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of package: reel; tape
Number of channels: 1
Output voltage: 1...76V DC
Output current: 3A
Input voltage: 12...76V DC
Frequency: 750kHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: HTSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of package: reel; tape
Number of channels: 1
Output voltage: 1...76V DC
Output current: 3A
Input voltage: 12...76V DC
Frequency: 750kHz
товару немає в наявності
В кошику
од. на суму грн.
| DTB113EKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
товару немає в наявності
В кошику
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| BD5466GUL-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D
Type of integrated circuit: audio amplifier
Number of channels: 1
Amplifier class: D
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D
Type of integrated circuit: audio amplifier
Number of channels: 1
Amplifier class: D
товару немає в наявності
В кошику
од. на суму грн.
| BA33BC0WFP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
товару немає в наявності
В кошику
од. на суму грн.
| BA33BC0FP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
товару немає в наявності
В кошику
од. на суму грн.
| BA33BC0T |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO220FP; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO220FP
Mounting: THT
Kind of package: tube
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO220FP; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO220FP
Mounting: THT
Kind of package: tube
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
товару немає в наявності
В кошику
од. на суму грн.
| RSJ650N10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| DTC143TKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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В кошику
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| DTC124EKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Kind of package: reel; tape
на замовлення 202 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.21 грн |
| 37+ | 11.47 грн |
| 42+ | 9.97 грн |
| 100+ | 5.62 грн |
| BD4849G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 4.9V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 4.9V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX84B18VLYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
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| SCS210AJTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 10A; reel,tape
Mounting: SMD
Case: TO263AB
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 10A
Power dissipation: 83W
Max. forward voltage: 1.55V
Max. forward impulse current: 150A
Max. load current: 45A
Max. off-state voltage: 650V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 10A; reel,tape
Mounting: SMD
Case: TO263AB
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 10A
Power dissipation: 83W
Max. forward voltage: 1.55V
Max. forward impulse current: 150A
Max. load current: 45A
Max. off-state voltage: 650V
Kind of package: reel; tape
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 367.80 грн |
| SCT2450KEC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Technology: SiC
Case: TO247
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -6...22V
Gate charge: 27nC
On-state resistance: 0.45Ω
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 85W
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Technology: SiC
Case: TO247
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -6...22V
Gate charge: 27nC
On-state resistance: 0.45Ω
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 85W
Drain-source voltage: 1.2kV
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| SCT2080KEGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 80A; 262W
Mounting: THT
Case: TO247
Kind of package: tube
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -6...22V
Gate charge: 106nC
On-state resistance: 0.117Ω
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 262W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 80A; 262W
Mounting: THT
Case: TO247
Kind of package: tube
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -6...22V
Gate charge: 106nC
On-state resistance: 0.117Ω
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 262W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
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| BD82034FVJ-GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; TSSOP-B8J
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP-B8J
On-state resistance: 0.105Ω
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; TSSOP-B8J
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP-B8J
On-state resistance: 0.105Ω
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
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| RB501SM-30FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 10µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 10µA
на замовлення 4870 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.63 грн |
| 55+ | 7.56 грн |
| 69+ | 6.05 грн |
| 102+ | 4.10 грн |
| 500+ | 2.66 грн |
| 1000+ | 2.33 грн |
| 2000+ | 2.07 грн |
| RB520SM-40T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 10µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 10µA
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 7271 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.79 грн |
| 34+ | 12.46 грн |
| 100+ | 7.03 грн |
| 500+ | 4.81 грн |
| 1000+ | 4.16 грн |
| 2500+ | 3.51 грн |
| 5000+ | 3.14 грн |
| RB520SM-30FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 3814 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.37 грн |
| 30+ | 14.13 грн |
| 50+ | 9.71 грн |
| 100+ | 8.26 грн |
| 500+ | 5.81 грн |
| 1000+ | 5.12 грн |
| 2000+ | 4.55 грн |
| DTC144EKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
на замовлення 951 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.21 грн |
| 37+ | 11.47 грн |
| 42+ | 9.97 грн |
| 100+ | 5.72 грн |
| 500+ | 3.91 грн |
| DTC144ECAT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
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| DTC144EEBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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| DTC144EMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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| DTC144ECAHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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| DTC144EETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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| DTC144EMFHAT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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| DTC144EU3HZGT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 2W; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 2W; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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| DTC144EU3T106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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| DTC144GUAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Current gain: 68
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| DTC144TUAFRAT106 |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
товару немає в наявності
Мінімальне замовлення: 20 шт
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од. на суму грн.
| DTC144TUAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
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| DTC144WUAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
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| UMB10NFHATN |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Kind of transistor: BRT
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| UMB10NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Kind of transistor: BRT
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| RUC002N05T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 800A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 800A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| RUM002N05T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 8285 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.27 грн |
| 27+ | 15.95 грн |
| 50+ | 10.59 грн |
| 100+ | 8.81 грн |
| 250+ | 7.01 грн |
| 500+ | 6.00 грн |
| 1000+ | 5.21 грн |
| 4000+ | 4.15 грн |
| 8000+ | 3.80 грн |
| RU1J002YNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT323F
Gate-source voltage: ±8V
On-state resistance: 3.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT323F
Gate-source voltage: ±8V
On-state resistance: 3.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2377 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.21 грн |
| 43+ | 9.89 грн |
| 65+ | 6.43 грн |
| 100+ | 5.29 грн |
| 500+ | 3.53 грн |
| 1000+ | 3.12 грн |
| RE1J002YNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 456 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.58 грн |
| 34+ | 12.46 грн |
| 100+ | 7.29 грн |
| UM6K33NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.74 грн |
| 23+ | 18.28 грн |
| 50+ | 12.22 грн |
| 100+ | 10.22 грн |
| 500+ | 7.15 грн |
| 1000+ | 6.32 грн |
| 1500+ | 6.07 грн |
| RF4E100AJTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 12.4mΩ
Drain current: 10A
Pulsed drain current: 36A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 12.4mΩ
Drain current: 10A
Pulsed drain current: 36A
Gate-source voltage: ±12V
Drain-source voltage: 30V
на замовлення 2780 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.17 грн |
| 10+ | 53.93 грн |
| 100+ | 35.90 грн |
| 500+ | 28.42 грн |
| 1000+ | 26.01 грн |
| RF4E080GNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.74 грн |
| 16+ | 27.67 грн |
| 100+ | 18.28 грн |
| 250+ | 16.20 грн |
| RF4E080BNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 14.5nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 14.5nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2953 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.53 грн |
| 12+ | 36.06 грн |
| 100+ | 25.43 грн |
| 500+ | 20.19 грн |
| 1000+ | 18.61 грн |
| SCS212AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; 93W; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Max. forward voltage: 1.55V
Load current: 12A
Max. forward impulse current: 170A
Max. load current: 52A
Power dissipation: 93W
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; 93W; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Max. forward voltage: 1.55V
Load current: 12A
Max. forward impulse current: 170A
Max. load current: 52A
Power dissipation: 93W
Max. off-state voltage: 650V
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| SCS112AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 48A
Max. forward impulse current: 167A
Power dissipation: 93W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 48A
Max. forward impulse current: 167A
Power dissipation: 93W
Kind of package: tube
Heatsink thickness: max. 1.27mm
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В кошику
од. на суму грн.
| SCT3120ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Case: TO247
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Technology: SiC
Polarisation: unipolar
Pulsed drain current: 52A
Drain current: 21A
Drain-source voltage: 650V
Gate-source voltage: -4...22V
Gate charge: 38nC
On-state resistance: 156mΩ
Power dissipation: 103W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Case: TO247
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Technology: SiC
Polarisation: unipolar
Pulsed drain current: 52A
Drain current: 21A
Drain-source voltage: 650V
Gate-source voltage: -4...22V
Gate charge: 38nC
On-state resistance: 156mΩ
Power dissipation: 103W
Kind of channel: enhancement
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од. на суму грн.
| SCS220AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Case: TO220FP-2
Mounting: THT
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 20A
Max. forward voltage: 1.55V
Max. forward impulse current: 260A
Power dissipation: 40W
Max. load current: 41A
Max. off-state voltage: 650V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Case: TO220FP-2
Mounting: THT
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 20A
Max. forward voltage: 1.55V
Max. forward impulse current: 260A
Power dissipation: 40W
Max. load current: 41A
Max. off-state voltage: 650V
Kind of package: tube
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В кошику
од. на суму грн.
| BA10393F-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Kind of output: open collector
Kind of package: reel; tape
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Kind of output: open collector
Kind of package: reel; tape
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
на замовлення 2046 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.22 грн |
| 100+ | 24.26 грн |
| US6X7TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 1.5A; 400mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.4W
Case: SOT363T
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 1.5A; 400mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.4W
Case: SOT363T
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
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од. на суму грн.
| RQ3E120ATTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -48A
Drain current: -39A
Drain-source voltage: -30V
Gate charge: 62nC
On-state resistance: 11.3mΩ
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: HSMT8
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -48A
Drain current: -39A
Drain-source voltage: -30V
Gate charge: 62nC
On-state resistance: 11.3mΩ
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: HSMT8
Type of transistor: P-MOSFET
на замовлення 2941 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.75 грн |
| 10+ | 45.45 грн |
| 100+ | 30.16 грн |
| RFC02MM2STFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Load current: 0.2A
Max. forward voltage: 0.95V
Max. forward impulse current: 10A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Load current: 0.2A
Max. forward voltage: 0.95V
Max. forward impulse current: 10A
Max. off-state voltage: 200V
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| SCS215AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 15A
Max. forward voltage: 1.55V
Power dissipation: 39W
Max. forward impulse current: 200A
Max. off-state voltage: 650V
Max. load current: 36A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 15A
Max. forward voltage: 1.55V
Power dissipation: 39W
Max. forward impulse current: 200A
Max. off-state voltage: 650V
Max. load current: 36A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
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| SCS315AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.3mA
Load current: 15A
Max. forward voltage: 1.71V
Power dissipation: 39W
Max. forward impulse current: 410A
Max. off-state voltage: 650V
Max. load current: 39A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.3mA
Load current: 15A
Max. forward voltage: 1.71V
Power dissipation: 39W
Max. forward impulse current: 410A
Max. off-state voltage: 650V
Max. load current: 39A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
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| SCS210AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. forward voltage: 1.55V
Max. load current: 28A
Max. off-state voltage: 650V
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. forward voltage: 1.55V
Max. load current: 28A
Max. off-state voltage: 650V
Max. forward impulse current: 150A
Kind of package: tube
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| SCS310AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 0.2mA
Load current: 10A
Max. forward voltage: 1.71V
Max. load current: 30A
Max. off-state voltage: 650V
Max. forward impulse current: 0.3kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 0.2mA
Load current: 10A
Max. forward voltage: 1.71V
Max. load current: 30A
Max. off-state voltage: 650V
Max. forward impulse current: 0.3kA
Kind of package: tube
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| RS1G201ATTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RS1G260MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RS1G120MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| RS1G150MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| RS1G180MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| RS1G300GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 120A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 120A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SML-P13FTT86R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 18mcd; 20mA; 566nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 18mcd
LED current: 20mA
Wavelength: 566nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 18mcd; 20mA; 566nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 18mcd
LED current: 20mA
Wavelength: 566nm
Front: flat
LED lens: transparent
товару немає в наявності
В кошику
од. на суму грн.