Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102285) > Сторінка 783 з 1705
Фото | Назва | Виробник | Інформація |
Доступність |
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RF6C055BCTCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RF6E045AJTCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ5C060BCTCL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RQ5E025ATTCL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RQ5E030AJTCL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RQ5E070BNTCL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RQ6E085BNTCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ7E055ATTCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ7E110AJTCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 10mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RS3E135BNGZETB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RYC002N05T316 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: SST3 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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UT6JA2TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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UT6K3TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UT6MA3TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SCS302APC9 | Rohm Semiconductor |
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на замовлення 514 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SCS304APC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 862 шт: термін постачання 21-31 дні (днів) |
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MMBZ10VALT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.7A Voltage - Reverse Standoff (Typ): 6.5V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 9.5V Voltage - Clamping (Max) @ Ipp: 14.2V Power - Peak Pulse: 24W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ12VALT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 85pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.35A Voltage - Reverse Standoff (Typ): 8.5V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ15VALT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 75pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.9A Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.25V Voltage - Clamping (Max) @ Ipp: 21V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBZ16VALT116 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ18VALT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 60pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A Voltage - Reverse Standoff (Typ): 14.5V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ20VALT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.4A Voltage - Reverse Standoff (Typ): 17V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 28V Power - Peak Pulse: 40W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ24VALT116 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ27VALT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 42pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 22V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 25.65V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ30VALT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 38pF @ 1MHz Current - Peak Pulse (10/1000µs): 950mA Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 43V Power - Peak Pulse: 40W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ33VALT116 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ10VALT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.7A Voltage - Reverse Standoff (Typ): 6.5V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 9.5V Voltage - Clamping (Max) @ Ipp: 14.2V Power - Peak Pulse: 24W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ12VALT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 85pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.35A Voltage - Reverse Standoff (Typ): 8.5V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ15VALT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 75pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.9A Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.25V Voltage - Clamping (Max) @ Ipp: 21V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBZ16VALT116 | Rohm Semiconductor |
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на замовлення 148 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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MMBZ18VALT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 60pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A Voltage - Reverse Standoff (Typ): 14.5V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 664 шт: термін постачання 21-31 дні (днів) |
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MMBZ20VALT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.4A Voltage - Reverse Standoff (Typ): 17V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 28V Power - Peak Pulse: 40W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ24VALT116 | Rohm Semiconductor |
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на замовлення 433 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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MMBZ27VALT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 42pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 22V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 25.65V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 486 шт: термін постачання 21-31 дні (днів) |
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MMBZ30VALT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 38pF @ 1MHz Current - Peak Pulse (10/1000µs): 950mA Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 43V Power - Peak Pulse: 40W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MMBZ33VALT116 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RB088BM150TL | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RBQ10BM45ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RF501BM2STL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 27500 шт: термін постачання 21-31 дні (днів) |
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RF505BM6STL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RF601BM2DTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RFN10BM3STL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 350 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RR601BM4STL | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RB088BM150TL | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RBQ10BM45ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RF501BM2STL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 30771 шт: термін постачання 21-31 дні (днів) |
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RF505BM6STL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 310 шт: термін постачання 21-31 дні (днів) |
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RF601BM2DTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 4821 шт: термін постачання 21-31 дні (днів) |
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RFN10BM3STL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 350 V |
на замовлення 5105 шт: термін постачання 21-31 дні (днів) |
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RR601BM4STL | Rohm Semiconductor |
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на замовлення 79 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
1SS355WTE-17 | Rohm Semiconductor |
Description: DIODE GEN PURPOSE Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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UDZWTE-1715B | Rohm Semiconductor | Description: DIODE ZENER UMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SCT2H12NYTB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SCT2H12NYTB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ROHM-STEPMO_EVK_20E | Rohm Semiconductor |
![]() Packaging: Bulk Function: Motor Controller/Driver, Stepper Type: Power Management Contents: Board(s) Utilized IC / Part: BD63876EFV Platform: Arduino Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ROHM-760308MP-EVK-001 | Rohm Semiconductor |
![]() Packaging: Bulk Function: Wireless Power Supply/Charging Type: Power Management Utilized IC / Part: BD57015, BD57020, ML610Q772, WE-WPCC Supplied Contents: Board(s), Power Supply Primary Attributes: Transmitter and Receiver Part Status: Obsolete Contents: Board(s), Power Supply Secondary Attributes: On-Board LEDs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
SENSORSHIELD-EVK-001 | Rohm Semiconductor |
![]() Packaging: Bulk Function: Multiple Type: Sensor Contents: Board(s) Utilized IC / Part: BD1020, BD7411, BH1745, BM1383, BM1422, RPR-0521 Platform: SensorShield Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
BA5912BFP-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Function: Driver - Fully Integrated, Control and Power Stage Interface: Parallel Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 13.2V Applications: General Purpose Voltage - Load: 4.5V ~ 13.2V Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
BU9450KV-E2 | Rohm Semiconductor | Description: IC USB HOST MP3 DECODER VQFP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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RSS090P03FU7TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. |
RF6C055BCTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
RF6E045AJTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 4.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 4.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 14.83 грн |
RQ5C060BCTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 21.18 грн |
6000+ | 19.32 грн |
9000+ | 17.89 грн |
RQ5E025ATTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.90 грн |
6000+ | 9.58 грн |
RQ5E030AJTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.75 грн |
6000+ | 11.24 грн |
RQ5E070BNTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
RQ6E085BNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 25.91 грн |
RQ7E055ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 29.80 грн |
RQ7E110AJTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
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RS3E135BNGZETB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 33.33 грн |
RYC002N05T316 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.04 грн |
6000+ | 5.68 грн |
9000+ | 5.03 грн |
UT6JA2TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 21.04 грн |
6000+ | 20.12 грн |
UT6K3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.54 грн |
UT6MA3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 25.08 грн |
SCS302APC9 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 650V 2A TO220-2
Description: DIODE SCHOTTKY 650V 2A TO220-2
на замовлення 514 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SCS304APC9 |
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Виробник: Rohm Semiconductor
Description: DIODE SILICON CARBIDE 650V 4A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SILICON CARBIDE 650V 4A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 862 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 219.64 грн |
50+ | 105.06 грн |
100+ | 94.73 грн |
500+ | 71.91 грн |
MMBZ10VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
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MMBZ12VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
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MMBZ15VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.10 грн |
MMBZ16VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 13VWM 23VC SOT23
Description: TVS DIODE 13VWM 23VC SOT23
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MMBZ18VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
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MMBZ20VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 17VWM 28VC SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 17VWM 28VC SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
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MMBZ24VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 22V 32V SOT23
Description: TVS DIODE 22V 32V SOT23
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MMBZ27VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
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MMBZ30VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
MMBZ33VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 26V 46V SOT23
Description: TVS DIODE 26V 46V SOT23
товару немає в наявності
В кошику
од. на суму грн.
MMBZ10VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
MMBZ12VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
MMBZ15VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.51 грн |
MMBZ16VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 13VWM 23VC SOT23
Description: TVS DIODE 13VWM 23VC SOT23
на замовлення 148 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
MMBZ18VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 664 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.51 грн |
27+ | 11.57 грн |
100+ | 5.66 грн |
500+ | 4.43 грн |
MMBZ20VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 17VWM 28VC SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 17VWM 28VC SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
MMBZ24VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 22VWM 32VC SOT23
Description: TVS DIODE 22VWM 32VC SOT23
на замовлення 433 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
MMBZ27VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 486 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
31+ | 10.35 грн |
45+ | 6.82 грн |
100+ | 4.53 грн |
MMBZ30VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
MMBZ33VALT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 26VWM 46VC SOT23
Description: TVS DIODE 26VWM 46VC SOT23
товару немає в наявності
В кошику
од. на суму грн.
RB088BM150TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 150V TO252
Description: DIODE ARRAY SCHOTTKY 150V TO252
товару немає в наявності
В кошику
од. на суму грн.
RBQ10BM45ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
RF501BM2STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 39.54 грн |
5000+ | 36.27 грн |
12500+ | 34.59 грн |
RF505BM6STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
RF601BM2DTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 39.81 грн |
RFN10BM3STL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 350V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Description: DIODE STANDARD 350V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 39.91 грн |
RR601BM4STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 6A TO252
Description: DIODE GEN PURP 400V 6A TO252
товару немає в наявності
В кошику
од. на суму грн.
RB088BM150TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 150V TO252
Description: DIODE ARRAY SCHOTTKY 150V TO252
товару немає в наявності
В кошику
од. на суму грн.
RBQ10BM45ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
RF501BM2STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 30771 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.50 грн |
10+ | 75.25 грн |
100+ | 58.59 грн |
500+ | 46.60 грн |
1000+ | 37.96 грн |
RF505BM6STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 129.72 грн |
10+ | 111.73 грн |
100+ | 87.14 грн |
RF601BM2DTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 4821 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 96.29 грн |
10+ | 75.87 грн |
100+ | 58.98 грн |
500+ | 46.91 грн |
1000+ | 38.21 грн |
RFN10BM3STL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 350V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Description: DIODE STANDARD 350V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
на замовлення 5105 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.03 грн |
10+ | 60.46 грн |
100+ | 58.49 грн |
500+ | 42.29 грн |
1000+ | 38.78 грн |
RR601BM4STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 6A TO252
Description: DIODE GEN PURP 400V 6A TO252
на замовлення 79 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
UDZWTE-1715B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER UMD2
Description: DIODE ZENER UMD2
товару немає в наявності
В кошику
од. на суму грн.
SCT2H12NYTB |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 1700V 4A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Description: SICFET N-CH 1700V 4A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
SCT2H12NYTB |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 1700V 4A TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Description: SICFET N-CH 1700V 4A TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
ROHM-STEPMO_EVK_20E |
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Виробник: Rohm Semiconductor
Description: BD63876 STEPMOTOR DRVR SHIELD
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63876EFV
Platform: Arduino
Part Status: Obsolete
Description: BD63876 STEPMOTOR DRVR SHIELD
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63876EFV
Platform: Arduino
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
ROHM-760308MP-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD57015 BD57020
Packaging: Bulk
Function: Wireless Power Supply/Charging
Type: Power Management
Utilized IC / Part: BD57015, BD57020, ML610Q772, WE-WPCC
Supplied Contents: Board(s), Power Supply
Primary Attributes: Transmitter and Receiver
Part Status: Obsolete
Contents: Board(s), Power Supply
Secondary Attributes: On-Board LEDs
Description: EVAL BOARD FOR BD57015 BD57020
Packaging: Bulk
Function: Wireless Power Supply/Charging
Type: Power Management
Utilized IC / Part: BD57015, BD57020, ML610Q772, WE-WPCC
Supplied Contents: Board(s), Power Supply
Primary Attributes: Transmitter and Receiver
Part Status: Obsolete
Contents: Board(s), Power Supply
Secondary Attributes: On-Board LEDs
товару немає в наявності
В кошику
од. на суму грн.
SENSORSHIELD-EVK-001 |
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Виробник: Rohm Semiconductor
Description: MULTIPLE SENSOR SHIELD V1
Packaging: Bulk
Function: Multiple
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BD1020, BD7411, BH1745, BM1383, BM1422, RPR-0521
Platform: SensorShield
Part Status: Obsolete
Description: MULTIPLE SENSOR SHIELD V1
Packaging: Bulk
Function: Multiple
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BD1020, BD7411, BH1745, BM1383, BM1422, RPR-0521
Platform: SensorShield
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
BA5912BFP-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.5-13.2V HSOP25
Packaging: Tape & Reel (TR)
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 13.2V
Applications: General Purpose
Voltage - Load: 4.5V ~ 13.2V
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 4.5-13.2V HSOP25
Packaging: Tape & Reel (TR)
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 13.2V
Applications: General Purpose
Voltage - Load: 4.5V ~ 13.2V
Motor Type - AC, DC: Brushed DC
товару немає в наявності
В кошику
од. на суму грн.
BU9450KV-E2 |
Виробник: Rohm Semiconductor
Description: IC USB HOST MP3 DECODER VQFP
Description: IC USB HOST MP3 DECODER VQFP
товару немає в наявності
В кошику
од. на суму грн.
RSS090P03FU7TB |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 9A 8SOIC
Description: MOSFET P-CH 30V 9A 8SOIC
товару немає в наявності
В кошику
од. на суму грн.