Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13019) > Сторінка 58 з 217
Фото | Назва | Виробник | Інформація |
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SSM3J15CT(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 30V 0.1A CST3 |
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SSM3J16CT(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 0.1A CST3 |
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SSM3J304T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 2.3A TSM |
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SSM3J306T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 30V 2.4A TSM |
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SSM3J325F,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2A S-MINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Power Dissipation (Max): 600mW (Ta) Supplier Device Package: S-Mini Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
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SSM3J35MFV,L3F | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 100MA VESM |
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SSM3J36MFV,L3F | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 0.33A VESM |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SSM3J56MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 800MA VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V |
на замовлення 416000 шт: термін постачання 21-31 дні (днів) |
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SSM3K01T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 3.2A TSM |
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SSM3K16CT(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 0.1A CST3 S-MOS |
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SSM3K301T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 3.5A TSM |
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SSM3K302T(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 3A TSM Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V Power Dissipation (Max): 700mW (Ta) Supplier Device Package: TSM Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
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SSM3K309T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 4.7A TSM |
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SSM3K310T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 5A S-MOS |
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SSM3K318T,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 2.5A TSM |
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SSM3K7002BF,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 200MA SC59 |
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SSM6L11TU(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N/P-CH 20V 0.5A UF6 S |
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SSM6L16FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N/P-CH 20V 0.1A ES6 |
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SSM6L35FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: US6 Part Status: Active |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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SSM6N58NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFN (2x2) Part Status: Active |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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TAR5SB18(TE85L,F) | Toshiba Semiconductor and Storage | Description: IC REG LDO 1.8V 0.2A SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TAR5SB30(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 850 µA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.2V @ 50mA Protection Features: Over Current, Over Temperature |
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TAR5SB33(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 850 µA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.2V @ 50mA Protection Features: Over Current, Over Temperature |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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TAR5SB50(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 200MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 850 µA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.2V @ 50mA Protection Features: Over Current, Over Temperature |
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TC4050BF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 18V 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 18V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 48mA Supplier Device Package: 16-SOP Part Status: Active |
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TC4584BF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 6CH 1INP 14SOP Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 3.75V ~ 11.6V Input Logic Level - Low: 1.25V ~ 3.4V Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TC4S69F(TE85L,F) | Toshiba Semiconductor and Storage | Description: IC INVERTER 1CH 1-INP SMV |
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TC4SU11F(T5L,F,T) | Toshiba Semiconductor and Storage | Description: IC GATE NAND 1CH 2-INP SMV |
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TC74HC4051AFT(EL,M | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX 8X1 16TSSOP |
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TC74VHC27FT(ELK,M) | Toshiba Semiconductor and Storage | Description: IC GATE NOR 3CH 3-INP 14-TSSOP |
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TC7LX1108WBG(EL,AH | Toshiba Semiconductor and Storage | Description: IC TRANSLATOR BIDIR 24WCSPC |
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TC7MBL3257CFT(EL) | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX 4 X 2:1 16TSSOP |
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TC7SET08F,LJ | Toshiba Semiconductor and Storage | Description: IC GATE AND 1CH 2-INP SMV |
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TC7SET125F(TE85L,F | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 5.5V SMV |
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TC7SET125FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 5-SSOP |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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TC7SH02F,LJ | Toshiba Semiconductor and Storage | Description: IC GATE NOR 1CH 2-INP SMV |
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TC7SH08F,LJ | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SMV Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
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TC7SH32F,LJ | Toshiba Semiconductor and Storage | Description: IC GATE OR 1CH 2-INP SMV |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TC7SH34FS(TPL3) | Toshiba Semiconductor and Storage | Description: IC GATE L-MOS FSV |
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TC7SZ17FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 5-SSOP |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TC7W02FK(TE85L,F) | Toshiba Semiconductor and Storage | Description: IC GATE NOR 2CH 2-INP US8 |
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TC7W240FU(TE12L,F) | Toshiba Semiconductor and Storage | Description: IC GATE L-MOS SM8 |
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TC7WP3125FC(TE85L) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH 2 X 1:1 CST8 |
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TC7WP3125FK(T5L,F) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH 2 X 1:1 US8 |
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TC7WPN3125FC(TE85L | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH SPST DUAL CST8 |
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TC7WPN3125FK(T5L,F | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH 2 X 1:1 US8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TK20G60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 20A D2PAK Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V |
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TK39A60W,S4VX | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 39A TO220-3 |
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TK10Q60W,S1VQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 9.7A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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TK16C60W,S1VQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 15.8A I2PAK |
на замовлення 280 шт: термін постачання 21-31 дні (днів) |
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TK20C60W,S1VQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 20A I2PAK |
на замовлення 288 шт: термін постачання 21-31 дні (днів) |
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TK10V60W,LVQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 9.7A 5DFN |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TK12V60W,LVQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 11.5A 4DFN |
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TK16V60W,LVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 15.8A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 790µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
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TK20V60W,LVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V |
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TK31V60W,LVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 30.8A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
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TK20A60W,S5VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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TK20N60W,S1VF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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TPN11003NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 11A 8TSON-ADV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V Power Dissipation (Max): 700mW (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
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TPN8R903NL,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 20A 8TSON |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
SSM3J15CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 0.1A CST3
Description: MOSFET P-CH 30V 0.1A CST3
товар відсутній
SSM3J16CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.1A CST3
Description: MOSFET P-CH 20V 0.1A CST3
товар відсутній
SSM3J304T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.3A TSM
Description: MOSFET P-CH 20V 2.3A TSM
товар відсутній
SSM3J306T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.4A TSM
Description: MOSFET P-CH 30V 2.4A TSM
товар відсутній
SSM3J325F,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
товар відсутній
SSM3J35MFV,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 100MA VESM
Description: MOSFET P-CH 20V 100MA VESM
товар відсутній
SSM3J36MFV,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.33A VESM
Description: MOSFET P-CH 20V 0.33A VESM
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)SSM3J56MFV,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
на замовлення 416000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 5.03 грн |
16000+ | 4.19 грн |
24000+ | 4.11 грн |
56000+ | 3.19 грн |
SSM3K01T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3.2A TSM
Description: MOSFET N-CH 30V 3.2A TSM
товар відсутній
SSM3K16CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
товар відсутній
SSM3K301T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.5A TSM
Description: MOSFET N-CH 20V 3.5A TSM
товар відсутній
SSM3K302T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V
Power Dissipation (Max): 700mW (Ta)
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Description: MOSFET N-CH 30V 3A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V
Power Dissipation (Max): 700mW (Ta)
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
товар відсутній
SSM3K309T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.7A TSM
Description: MOSFET N-CH 20V 4.7A TSM
товар відсутній
SSM3K310T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 5A S-MOS
Description: MOSFET N-CH 20V 5A S-MOS
товар відсутній
SSM3K318T,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Description: MOSFET N-CH 60V 2.5A TSM
товар відсутній
SSM3K7002BF,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SC59
Description: MOSFET N-CH 60V 200MA SC59
товар відсутній
SSM6L11TU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A UF6 S
Description: MOSFET N/P-CH 20V 0.5A UF6 S
товар відсутній
SSM6L16FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.1A ES6
Description: MOSFET N/P-CH 20V 0.1A ES6
товар відсутній
SSM6L35FU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Part Status: Active
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)SSM6N58NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
Description: MOSFET 2N-CH 30V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.89 грн |
6000+ | 7.28 грн |
9000+ | 6.55 грн |
30000+ | 6.06 грн |
75000+ | 5.69 грн |
TAR5SB18(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A SMV
Description: IC REG LDO 1.8V 0.2A SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TAR5SB30(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
товар відсутній
TAR5SB33(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.59 грн |
6000+ | 9.54 грн |
15000+ | 8.88 грн |
30000+ | 7.9 грн |
TAR5SB50(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
товар відсутній
TC4050BF(EL,N,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 18V 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 48mA
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC BUFFER NON-INVERT 18V 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 48mA
Supplier Device Package: 16-SOP
Part Status: Active
товар відсутній
TC4584BF(EL,N,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.75V ~ 11.6V
Input Logic Level - Low: 1.25V ~ 3.4V
Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.75V ~ 11.6V
Input Logic Level - Low: 1.25V ~ 3.4V
Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 18.67 грн |
TC4S69F(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP SMV
Description: IC INVERTER 1CH 1-INP SMV
товар відсутній
TC4SU11F(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Description: IC GATE NAND 1CH 2-INP SMV
товар відсутній
TC74HC4051AFT(EL,M |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 8X1 16TSSOP
Description: IC MUX/DEMUX 8X1 16TSSOP
товар відсутній
TC74VHC27FT(ELK,M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14-TSSOP
Description: IC GATE NOR 3CH 3-INP 14-TSSOP
товар відсутній
TC7LX1108WBG(EL,AH |
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSLATOR BIDIR 24WCSPC
Description: IC TRANSLATOR BIDIR 24WCSPC
товар відсутній
TC7MBL3257CFT(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
товар відсутній
TC7SET08F,LJ |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Description: IC GATE AND 1CH 2-INP SMV
товар відсутній
TC7SET125F(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Description: IC BUFFER NON-INVERT 5.5V SMV
товар відсутній
TC7SET125FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.92 грн |
6000+ | 3.28 грн |
15000+ | 2.79 грн |
30000+ | 2.46 грн |
TC7SH02F,LJ |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
Description: IC GATE NOR 1CH 2-INP SMV
товар відсутній
TC7SH08F,LJ |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
TC7SH32F,LJ |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
Description: IC GATE OR 1CH 2-INP SMV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)TC7SH34FS(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS FSV
Description: IC GATE L-MOS FSV
товар відсутній
TC7SZ17FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 5-SSOP
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 5-SSOP
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.78 грн |
6000+ | 3.16 грн |
TC7W02FK(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP US8
Description: IC GATE NOR 2CH 2-INP US8
товар відсутній
TC7W240FU(TE12L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS SM8
Description: IC GATE L-MOS SM8
товар відсутній
TC7WP3125FC(TE85L) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 CST8
Description: IC BUS SWITCH 2 X 1:1 CST8
товар відсутній
TC7WP3125FK(T5L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
Description: IC BUS SWITCH 2 X 1:1 US8
товар відсутній
TC7WPN3125FC(TE85L |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Description: IC BUS SWITCH SPST DUAL CST8
товар відсутній
TC7WPN3125FK(T5L,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
Description: IC BUS SWITCH 2 X 1:1 US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TK20G60W,RVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Description: MOSFET N CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
товар відсутній
TK39A60W,S4VX |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 39A TO220-3
Description: MOSFET N-CH 600V 39A TO220-3
товар відсутній
TK10Q60W,S1VQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: MOSFET N-CH 600V 9.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 189.81 грн |
75+ | 146.78 грн |
TK16C60W,S1VQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A I2PAK
Description: MOSFET N-CH 600V 15.8A I2PAK
на замовлення 280 шт:
термін постачання 21-31 дні (днів)TK20C60W,S1VQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A I2PAK
Description: MOSFET N-CH 600V 20A I2PAK
на замовлення 288 шт:
термін постачання 21-31 дні (днів)TK10V60W,LVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A 5DFN
Description: MOSFET N-CH 600V 9.7A 5DFN
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)TK12V60W,LVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A 4DFN
Description: MOSFET N-CH 600V 11.5A 4DFN
товар відсутній
TK16V60W,LVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
товар відсутній
TK20V60W,LVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
товар відсутній
TK31V60W,LVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
товар відсутній
TK20A60W,S5VX |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
на замовлення 64 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 187.68 грн |
50+ | 143.46 грн |
TK20N60W,S1VF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 400.24 грн |
10+ | 324.01 грн |
TPN11003NL,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
товар відсутній
TPN8R903NL,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8TSON
Description: MOSFET N-CH 30V 20A 8TSON
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)