Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13019) > Сторінка 54 з 217
Фото | Назва | Виробник | Інформація |
Доступність |
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2SA1587-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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2SA1954BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.5A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 100 mW |
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2SA1955FVATPL3Z | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.4A CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 130MHz Supplier Device Package: CST3 Part Status: Obsolete Current - Collector (Ic) (Max): 400 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 100 mW |
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2SA1955FVBTPL3Z | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.4A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 130MHz Supplier Device Package: VESM Part Status: Obsolete Current - Collector (Ic) (Max): 400 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 100 mW |
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2SC2712-OTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-236 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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2SC2713-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-236 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
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2SC2713-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-236 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SC3324GRTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-236 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
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2SC3325-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.5A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
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2SC3326-B,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 20V 0.3A TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Frequency - Transition: 30MHz Supplier Device Package: TO-236 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 150 mW |
на замовлення 198000 шт: термін постачання 21-31 дні (днів) |
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2SC4116-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
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2SC4213BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 20V 0.3A USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Frequency - Transition: 30MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 100 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SC5087YTE85LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMQ Packaging: Tape & Reel (TR) Package / Case: SC-61AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 13dB Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SMQ Part Status: Obsolete |
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2SC5232BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 12V 0.5A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW |
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2SC5233BTE85LF | Toshiba Semiconductor and Storage | Description: TRANS NPN 12V 0.5A USM |
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2SC6026CTGRTPL3 | Toshiba Semiconductor and Storage | Description: TRANS NPN 50V 0.1A CST3 |
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2SJ168TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 200MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SJ305TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 200MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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2SK1828TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 50MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-59 Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): 10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SK1829TE85LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 50MA SC70 |
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2SK2009TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 200MA SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SK2034TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V Power Dissipation (Max): 100mW (Ta) Supplier Device Package: SC-70 Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): 10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V |
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2SK880GRTE85LF | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: SC-70 Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V |
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DF2S6.2FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SOD923 Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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DF3A6.2FUTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3VWM USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: USM Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DF5A5.6CFUTE85LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 3.5VWM USV |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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DF5A5.6FTE85LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 2.5VWM SMV |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DF5A5.6FUTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 2.5VWM USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 65pF @ 1MHz Voltage - Reverse Standoff (Typ): 2.5V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.3V Power Line Protection: No Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.2LFUTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: USV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.9V Power Line Protection: No Part Status: Active |
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DF5A6.8FUTE85LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8LFUTE85LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HN1B01FU-GR,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP 50V 0.15A US6-PLN |
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HN1C01FU-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
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HN1C01FYTE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A SM6 |
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HN1D03FTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC74 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair CA + CC Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-74 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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HN1D04FUTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: US6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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HN2C01FEYTE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A ES6 |
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HN2D01FTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA SC74 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: SC-74 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HN2S01FUTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTTKY 10V US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: US6 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
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HN2S03FUTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTT 20V 50MA US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 50mA Supplier Device Package: US6 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
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HN3C10FUTE85LF | Toshiba Semiconductor and Storage | Description: RF TRANS 2 NPN 12V 7GHZ US6 |
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HN4A51JTE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP 120V 0.1A SMV |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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HN4K03JUTE85LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 0.1A USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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JDH2S01FSTPL3 | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 4V 25MA FSC |
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JDH2S02FSTPL3 | Toshiba Semiconductor and Storage |
Description: RF DIODE SCHOTTKY 10V FSC Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Diode Type: Schottky - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz Voltage - Peak Reverse (Max): 10V Supplier Device Package: fSC Part Status: Not For New Designs Current - Max: 10 mA |
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JDH3D01STE85LF | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 4V 25MA SSM |
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JDV2S07FSTPL3 | Toshiba Semiconductor and Storage |
Description: DIODE VARICAP VCO 10V FSC Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Diode Type: Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz Voltage - Peak Reverse (Max): 10V Supplier Device Package: fSC Part Status: Active Mounting Type: Surface Mount Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 2.3 |
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JDV2S09FSTPL3 | Toshiba Semiconductor and Storage | Description: DIODE STANDARD 10V FSC |
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RN1412TE85LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
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RN1441ATE85LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1442ATE85LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
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RN1444ATE85LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 20V 0.3A SMINI |
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RN1605TE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.3W SM6 |
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RN1901FETE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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RN1902T5LFT | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
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RN1911FETE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
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RN1962TE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.5W US6 |
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RN1964TE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
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RN1971TE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2404TE85LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.2W S-MINI |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
2SA1587-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
Description: TRANS PNP 120V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.46 грн |
6000+ | 2.2 грн |
9000+ | 1.82 грн |
2SA1954BTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Description: TRANS PNP 12V 0.5A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
товар відсутній
2SA1955FVATPL3Z |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Description: TRANS PNP 12V 0.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
товар відсутній
2SA1955FVBTPL3Z |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Description: TRANS PNP 12V 0.4A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
товар відсутній
2SC2712-OTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.17 грн |
6000+ | 1.94 грн |
9000+ | 1.61 грн |
2SC2713-BL,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS NPN 120V 0.1A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
товар відсутній
2SC2713-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS NPN 120V 0.1A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.59 грн |
6000+ | 3 грн |
2SC3324GRTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS NPN 120V 0.1A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
товар відсутній
2SC3325-Y,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товар відсутній
2SC3326-B,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
Description: TRANS NPN 20V 0.3A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
на замовлення 198000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.56 грн |
6000+ | 4.2 грн |
9000+ | 3.63 грн |
30000+ | 3.34 грн |
75000+ | 2.77 грн |
150000+ | 2.73 грн |
2SC4116-BL,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
товар відсутній
2SC4213BTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
Description: TRANS NPN 20V 0.3A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.07 грн |
6000+ | 4.67 грн |
2SC5087YTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
товар відсутній
2SC5232BTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Description: TRANS NPN 12V 0.5A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
товар відсутній
2SC5233BTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A USM
Description: TRANS NPN 12V 0.5A USM
товар відсутній
2SC6026CTGRTPL3 |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
Description: TRANS NPN 50V 0.1A CST3
товар відсутній
2SJ168TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
Description: MOSFET P-CH 60V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 21.05 грн |
6000+ | 19.21 грн |
2SJ305TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 11.29 грн |
6000+ | 10.32 грн |
9000+ | 9.58 грн |
2SK1828TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Description: MOSFET N-CH 20V 50MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.54 грн |
6000+ | 4.18 грн |
2SK1829TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC70
Description: MOSFET N-CH 20V 50MA SC70
товар відсутній
2SK2009TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 200MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
Description: MOSFET N-CH 30V 200MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 11.68 грн |
2SK2034TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Description: MOSFET N-CH 20V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
товар відсутній
2SK880GRTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Description: JFET N-CH 50V SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
товар відсутній
DF2S6.2FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Description: TVS DIODE 5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.57 грн |
30000+ | 1.4 грн |
50000+ | 1.21 грн |
100000+ | 1.07 грн |
DF3A6.2FUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.9 грн |
6000+ | 3.26 грн |
15000+ | 2.78 грн |
DF5A5.6CFUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Description: TVS DIODE 3.5VWM USV
на замовлення 10 шт:
термін постачання 21-31 дні (днів)DF5A5.6FTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM SMV
Description: TVS DIODE 2.5VWM SMV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)DF5A5.6FUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 2.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.61 грн |
DF5A6.2LFUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
Part Status: Active
товар відсутній
DF5A6.8FUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Description: TVS DIODE 5VWM USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.9 грн |
DF5A6.8LFUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Description: TVS DIODE 5VWM USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.24 грн |
HN1B01FU-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6-PLN
Description: TRANS NPN/PNP 50V 0.15A US6-PLN
товар відсутній
HN1C01FU-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN 50V 0.15A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
товар відсутній
HN1C01FYTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SM6
Description: TRANS 2NPN 50V 0.15A SM6
товар відсутній
HN1D03FTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-74
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-74
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.32 грн |
6000+ | 5.01 грн |
9000+ | 4.44 грн |
HN1D04FUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товар відсутній
HN2C01FEYTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Description: TRANS 2NPN 50V 0.15A ES6
товар відсутній
HN2D01FTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SC-74
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 80MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SC-74
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.5 грн |
HN2S01FUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 10V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE ARRAY SCHOTTKY 10V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
товар відсутній
HN2S03FUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE ARRAY SCHOTT 20V 50MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
товар відсутній
HN3C10FUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS 2 NPN 12V 7GHZ US6
Description: RF TRANS 2 NPN 12V 7GHZ US6
товар відсутній
HN4A51JTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 120V 0.1A SMV
Description: TRANS 2PNP 120V 0.1A SMV
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.88 грн |
6000+ | 8.03 грн |
HN4K03JUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A USV
Description: MOSFET N-CH 20V 0.1A USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)JDH2S01FSTPL3 |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 4V 25MA FSC
Description: DIODE SCHOTTKY 4V 25MA FSC
товар відсутній
JDH2S02FSTPL3 |
Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE SCHOTTKY 10V FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: fSC
Part Status: Not For New Designs
Current - Max: 10 mA
Description: RF DIODE SCHOTTKY 10V FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: fSC
Part Status: Not For New Designs
Current - Max: 10 mA
товар відсутній
JDH3D01STE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 4V 25MA SSM
Description: DIODE SCHOTTKY 4V 25MA SSM
товар відсутній
JDV2S07FSTPL3 |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE VARICAP VCO 10V FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: fSC
Part Status: Active
Mounting Type: Surface Mount
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3
Description: DIODE VARICAP VCO 10V FSC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: fSC
Part Status: Active
Mounting Type: Surface Mount
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3
товар відсутній
JDV2S09FSTPL3 |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 10V FSC
Description: DIODE STANDARD 10V FSC
товар відсутній
RN1412TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
товар відсутній
RN1441ATE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)RN1442ATE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
товар відсутній
RN1444ATE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 20V 0.3A SMINI
Description: TRANS PREBIAS NPN 20V 0.3A SMINI
товар відсутній
RN1605TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1901FETE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)RN1902T5LFT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
RN1911FETE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1962TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.5W US6
Description: TRANS 2NPN PREBIAS 0.5W US6
товар відсутній
RN1964TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
RN1971TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)RN2404TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.2W S-MINI
Description: TRANS PREBIAS PNP 0.2W S-MINI
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)