Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71654) > Сторінка 1156 з 1195
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AL5809-60P1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 60mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 2.5...60V DC Kind of package: reel; tape Operating temperature: -40...125°C |
на замовлення 2052 шт: термін постачання 14-30 дні (днів) |
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AZ1117H-5.0TRE1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.25V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: AZ1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMT3003LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 44nC On-state resistance: 5.5mΩ Power dissipation: 2.4W Drain current: 18A Drain-source voltage: 30V Pulsed drain current: 100A Kind of package: 13 inch reel; tape Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3003LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 44nC On-state resistance: 5.5mΩ Power dissipation: 2.4W Drain current: 18A Drain-source voltage: 30V Pulsed drain current: 100A Kind of package: 7 inch reel; tape Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3003LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 44nC On-state resistance: 5.5mΩ Power dissipation: 2.4W Drain current: 18A Drain-source voltage: 30V Pulsed drain current: 100A Kind of package: 7 inch reel; tape Application: automotive industry Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Mounting: SMD Polarisation: unipolar Gate-source voltage: -16...20V Gate charge: 43.7nC On-state resistance: 6mΩ Power dissipation: 2.7W Drain current: 17A Drain-source voltage: 30V Pulsed drain current: 180A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3006LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 15mΩ Power dissipation: 2.1W Drain current: 12.5A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 13 inch reel; tape Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3006LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 15mΩ Power dissipation: 2.1W Drain current: 12.5A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 7 inch reel; tape Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3006LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 15mΩ Power dissipation: 2.1W Drain current: 12.5A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 7 inch reel; tape Application: automotive industry Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3006LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 10mΩ Power dissipation: 27.8W Drain current: 12.8A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 13 inch reel; tape Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3006LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.7nC On-state resistance: 10mΩ Power dissipation: 27.8W Drain current: 12.8A Drain-source voltage: 30V Pulsed drain current: 80A Kind of package: 7 inch reel; tape Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3006LPB-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12.6nC On-state resistance: 14mΩ Power dissipation: 1.7W Drain current: 9/11A Drain-source voltage: 30V Pulsed drain current: 80...100A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3020LDV-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.9W Drain current: 25A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 7 inch reel; tape Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP2120N-3.3TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD Operating temperature: -40...85°C Manufacturer series: AP2120 Case: SOT23 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.15A Voltage drop: 0.5V Output voltage: 3.3V Number of channels: 1 Tolerance: ±2% Input voltage: 2...6V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C3V3-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
на замовлення 3229 шт: термін постачання 14-30 дні (днів) |
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PAM2861ABR | DIODES INCORPORATED |
Category: LED driversDescription: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1; 6÷40VDC Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Case: TSOT25 Output current: 1A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 6...40V DC Topology: buck Kind of package: reel; tape Operating temperature: -40...85°C |
на замовлення 2491 шт: термін постачання 14-30 дні (днів) |
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SD103ATW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT363; SMD; 40V; 0.35A; reel,tape Max. forward voltage: 0.5V Load current: 0.35A Max. off-state voltage: 40V Semiconductor structure: triple independent Case: SOT363 Mounting: SMD Type of diode: Schottky switching Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 734 шт: термін постачання 14-30 дні (днів) |
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SD103AWS-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape Mounting: SMD Load current: 0.35A Max. forward voltage: 0.6V Max. forward impulse current: 1.5A Max. off-state voltage: 40V Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Type of diode: Schottky switching |
на замовлення 2995 шт: термін постачання 14-30 дні (днів) |
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SD103BWS-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.35A; 10ns; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.35A Semiconductor structure: single diode Capacitance: 35pF Max. forward voltage: 0.6V Max. forward impulse current: 1.5A Kind of package: reel; tape Power dissipation: 0.2W Leakage current: 5µA Reverse recovery time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SD103BWSQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.35A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.35A Semiconductor structure: single diode Capacitance: 35pF Max. forward voltage: 0.6V Max. forward impulse current: 1.5A Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74HC86S14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC Type of integrated circuit: digital Family: HC Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Kind of gate: XOR Operating temperature: -40...150°C Number of inputs: 2 Technology: CMOS Supply voltage: 2...6V DC Case: SO14 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74HC86T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C Type of integrated circuit: digital Family: HC Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Kind of gate: XOR Operating temperature: -40...150°C Number of inputs: 2 Technology: CMOS Supply voltage: 2...6V DC Case: TSSOP14 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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GBU810 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 83 шт: термін постачання 14-30 дні (днів) |
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SMBJ33A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2415 шт: термін постачання 14-30 дні (днів) |
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74HCT04T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...150°C Kind of output: push-pull Family: HCT Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Kind of package: reel; tape |
на замовлення 2108 шт: термін постачання 14-30 дні (днів) |
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| AP64500SP-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...85°C Output current: 5A Output voltage: 0.8...39V DC Input voltage: 3.8...40V DC Efficiency: 85% Frequency: 100kHz...2.2MHz Topology: buck |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP64501SP-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...85°C Output current: 5A Output voltage: 0.8...39V DC Input voltage: 3.8...40V DC Efficiency: 85% Frequency: 510...630kHz Topology: buck |
на замовлення 2624 шт: термін постачання 14-30 дні (днів) |
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2N7002E-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 1800 шт: термін постачання 14-30 дні (днів) |
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BAV99W-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Capacitance: 2pF Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A Features of semiconductor devices: small signal |
на замовлення 69 шт: термін постачання 14-30 дні (днів) |
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DMC2450UV-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Polarisation: unipolar Type of transistor: N/P-MOSFET Mounting: SMD Case: SOT563 Power dissipation: 1W On-state resistance: 1/0.5Ω Drain current: 1.3/-0.7A Gate-source voltage: ±12V Drain-source voltage: 20/-20V Kind of package: 7 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Version: ESD |
на замовлення 2904 шт: термін постачання 14-30 дні (днів) |
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BCX5610TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 1W Collector current: 1A Collector-emitter voltage: 80V Quantity in set/package: 1000pcs. Frequency: 150MHz Polarisation: bipolar |
на замовлення 347 шт: термін постачання 14-30 дні (днів) |
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BCX5616QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry Quantity in set/package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX5616TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.3W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.3W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX56TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
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1.5KE33A-T | DIODES INCORPORATED |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 31.4÷34.7V; 33A; unidirectional; DO201 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT125T14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Case: TSSOP14 Operating temperature: -40...125°C Kind of package: reel; tape Mounting: SMD Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Kind of output: 3-state Technology: CMOS; TTL Manufacturer series: HCT Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B530C-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Capacitance: 0.3nF Max. forward voltage: 0.55V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 1852 шт: термін постачання 14-30 дні (днів) |
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PAM2804AAB010 | DIODES INCORPORATED |
Category: LED driversDescription: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Case: TSOT25 Output current: 1A Number of channels: 1 Integrated circuit features: PWM Mounting: SMD Operating voltage: 2.5...6V DC Topology: buck Kind of package: reel; tape Operating temperature: -40...85°C |
на замовлення 260 шт: термін постачання 14-30 дні (днів) |
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1N4148WT-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD523 Max. forward voltage: 1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4148WTQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.715V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.125A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 1A Case: SOD523 Max. forward voltage: 0.715V Reverse recovery time: 4ns Application: automotive industry Capacitance: 2pF Max. load current: 0.25A |
на замовлення 872 шт: термін постачання 14-30 дні (днів) |
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MMDT5551-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363 Polarisation: bipolar Case: SOT363 Mounting: SMD Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.2A Power dissipation: 0.2W Quantity in set/package: 3000pcs. Current gain: 80...250 Collector-emitter voltage: 160V Frequency: 300MHz |
на замовлення 169 шт: термін постачання 14-30 дні (днів) |
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DMMT5551-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26 Polarisation: bipolar Case: SOT26 Mounting: SMD Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.2A Power dissipation: 0.3W Quantity in set/package: 3000pcs. Current gain: 50...250 Collector-emitter voltage: 160V Frequency: 100...300MHz |
на замовлення 2891 шт: термін постачання 14-30 дні (днів) |
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BSS84Q-13-F | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSS84Q-7-F | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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BSS84W-7-F | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 1232 шт: термін постачання 14-30 дні (днів) |
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BAW56T-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 75mA Reverse recovery time: 4ns Semiconductor structure: common anode; double Capacitance: 1.5pF Case: SOT523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A Features of semiconductor devices: small signal |
на замовлення 683 шт: термін постачання 14-30 дні (днів) |
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BAW56W-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT323 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A Features of semiconductor devices: small signal |
на замовлення 2298 шт: термін постачання 14-30 дні (днів) |
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BAS16LP-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DFN2 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 95 шт: термін постачання 14-30 дні (днів) |
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AL5801W6-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Output current: 0.35A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 5...100V DC Integrated circuit features: PWM |
на замовлення 719 шт: термін постачання 14-30 дні (днів) |
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BC846BW-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
на замовлення 1350 шт: термін постачання 14-30 дні (днів) |
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LM2903QS-13 | DIODES INCORPORATED |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA Kind of comparator: universal Case: SO8 Kind of output: open collector Type of integrated circuit: comparator Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 200nA Input offset voltage: 15mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 |
на замовлення 2292 шт: термін постачання 14-30 дні (днів) |
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BAT54AW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMT6009LCT | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3 Case: TO220-3 Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 14.5mΩ Power dissipation: 2.2W Drain current: 29.8A Gate-source voltage: ±16V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6009LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 11.7mΩ Power dissipation: 2.08W Drain current: 9A Gate-source voltage: ±16V Pulsed drain current: 90A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6009LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12.8mΩ Power dissipation: 2.6W Drain current: 10.6A Gate-source voltage: ±16V Pulsed drain current: 90A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6009LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12mΩ Power dissipation: 2.3W Drain current: 9.1A Gate-source voltage: ±16V Pulsed drain current: 160A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMT6009LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12mΩ Power dissipation: 1.6W Drain current: 11.5A Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMT6010LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 25A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6010LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6010LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 12mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 125A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| AL5809-60P1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 2052 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.11 грн |
| 19+ | 22.41 грн |
| 23+ | 18.88 грн |
| AZ1117H-5.0TRE1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
товару немає в наявності
В кошику
од. на суму грн.
| DMT3003LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3003LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3003LFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3004LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 43.7nC
On-state resistance: 6mΩ
Power dissipation: 2.7W
Drain current: 17A
Drain-source voltage: 30V
Pulsed drain current: 180A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 43.7nC
On-state resistance: 6mΩ
Power dissipation: 2.7W
Drain current: 17A
Drain-source voltage: 30V
Pulsed drain current: 180A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LFDFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LPB-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12.6nC
On-state resistance: 14mΩ
Power dissipation: 1.7W
Drain current: 9/11A
Drain-source voltage: 30V
Pulsed drain current: 80...100A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12.6nC
On-state resistance: 14mΩ
Power dissipation: 1.7W
Drain current: 9/11A
Drain-source voltage: 30V
Pulsed drain current: 80...100A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| DMT3020LDV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.9W
Drain current: 25A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.9W
Drain current: 25A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| AP2120N-3.3TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Case: SOT23
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Case: SOT23
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
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| BZT52C3V3-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
на замовлення 3229 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 79+ | 5.37 грн |
| 93+ | 4.53 грн |
| 122+ | 3.46 грн |
| 183+ | 2.30 грн |
| 500+ | 1.60 грн |
| 1000+ | 1.44 грн |
| 3000+ | 1.33 грн |
| PAM2861ABR |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1; 6÷40VDC
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...40V DC
Topology: buck
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1; 6÷40VDC
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...40V DC
Topology: buck
Kind of package: reel; tape
Operating temperature: -40...85°C
на замовлення 2491 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.69 грн |
| 10+ | 46.24 грн |
| 25+ | 41.71 грн |
| 100+ | 36.51 грн |
| 250+ | 33.91 грн |
| 500+ | 32.40 грн |
| SD103ATW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.35A; reel,tape
Max. forward voltage: 0.5V
Load current: 0.35A
Max. off-state voltage: 40V
Semiconductor structure: triple independent
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.35A; reel,tape
Max. forward voltage: 0.5V
Load current: 0.35A
Max. off-state voltage: 40V
Semiconductor structure: triple independent
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 734 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.17 грн |
| 69+ | 6.13 грн |
| SD103AWS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky switching
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.27 грн |
| 48+ | 8.81 грн |
| 100+ | 6.21 грн |
| 500+ | 4.99 грн |
| 1000+ | 4.52 грн |
| SD103BWS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.35A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 35pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Leakage current: 5µA
Reverse recovery time: 10ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.35A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 35pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Leakage current: 5µA
Reverse recovery time: 10ns
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| SD103BWSQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 35pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 35pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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| 74HC86S14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Family: HC
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: XOR
Operating temperature: -40...150°C
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: SO14
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Family: HC
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: XOR
Operating temperature: -40...150°C
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: SO14
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| 74HC86T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Family: HC
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: XOR
Operating temperature: -40...150°C
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Family: HC
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: XOR
Operating temperature: -40...150°C
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: TSSOP14
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| GBU810 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 83 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.90 грн |
| 6+ | 72.18 грн |
| 10+ | 62.36 грн |
| 20+ | 52.96 грн |
| SMBJ33A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2415 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 40+ | 10.57 грн |
| 45+ | 9.40 грн |
| 54+ | 7.89 грн |
| 100+ | 6.80 грн |
| 74HCT04T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
на замовлення 2108 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.83 грн |
| 24+ | 18.04 грн |
| 28+ | 15.53 грн |
| 100+ | 11.92 грн |
| 250+ | 9.06 грн |
| 500+ | 7.55 грн |
| 1000+ | 6.97 грн |
| AP64500SP-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 5A
Output voltage: 0.8...39V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 100kHz...2.2MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 5A
Output voltage: 0.8...39V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 100kHz...2.2MHz
Topology: buck
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| AP64501SP-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 5A
Output voltage: 0.8...39V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 510...630kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 5A
Output voltage: 0.8...39V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 510...630kHz
Topology: buck
на замовлення 2624 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 135.57 грн |
| 10+ | 93.16 грн |
| 25+ | 91.48 грн |
| 2N7002E-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.27 грн |
| 100+ | 4.20 грн |
| 116+ | 3.63 грн |
| 128+ | 3.29 грн |
| 500+ | 2.49 грн |
| 1000+ | 2.36 грн |
| 1500+ | 2.27 грн |
| BAV99W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
на замовлення 69 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 69+ | 5.87 грн |
| DMC2450UV-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Polarisation: unipolar
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SOT563
Power dissipation: 1W
On-state resistance: 1/0.5Ω
Drain current: 1.3/-0.7A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Polarisation: unipolar
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SOT563
Power dissipation: 1W
On-state resistance: 1/0.5Ω
Drain current: 1.3/-0.7A
Gate-source voltage: ±12V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Version: ESD
на замовлення 2904 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.83 грн |
| 21+ | 20.31 грн |
| 100+ | 11.83 грн |
| 500+ | 8.31 грн |
| 1000+ | 7.22 грн |
| BCX5610TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 80V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 80V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
на замовлення 347 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.92 грн |
| 23+ | 18.80 грн |
| 100+ | 10.24 грн |
| BCX5616QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
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| BCX5616TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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| BCX56TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
на замовлення 33 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.40 грн |
| 30+ | 14.27 грн |
| 1.5KE33A-T |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; 33A; unidirectional; DO201
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; 33A; unidirectional; DO201
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| 74HCT125T14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Number of channels: 4
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Number of channels: 4
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| B530C-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 0.3nF
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 0.3nF
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 1852 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.96 грн |
| 19+ | 22.74 грн |
| 100+ | 18.80 грн |
| 400+ | 16.62 грн |
| 500+ | 16.28 грн |
| 1000+ | 15.11 грн |
| PAM2804AAB010 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 2.5...6V DC
Topology: buck
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 2.5...6V DC
Topology: buck
Kind of package: reel; tape
Operating temperature: -40...85°C
на замовлення 260 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.63 грн |
| 21+ | 20.65 грн |
| 25+ | 19.05 грн |
| 100+ | 16.79 грн |
| 1N4148WT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1V
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 1N4148WTQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.715V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD523
Max. forward voltage: 0.715V
Reverse recovery time: 4ns
Application: automotive industry
Capacitance: 2pF
Max. load current: 0.25A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 4ns; SOD523; Ufmax: 0.715V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD523
Max. forward voltage: 0.715V
Reverse recovery time: 4ns
Application: automotive industry
Capacitance: 2pF
Max. load current: 0.25A
на замовлення 872 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.85 грн |
| 54+ | 7.89 грн |
| 60+ | 7.05 грн |
| 100+ | 4.88 грн |
| 500+ | 3.64 грн |
| MMDT5551-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363
Polarisation: bipolar
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80...250
Collector-emitter voltage: 160V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363
Polarisation: bipolar
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80...250
Collector-emitter voltage: 160V
Frequency: 300MHz
на замовлення 169 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.21 грн |
| 23+ | 18.97 грн |
| 30+ | 14.44 грн |
| 50+ | 8.39 грн |
| 69+ | 6.13 грн |
| DMMT5551-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Polarisation: bipolar
Case: SOT26
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 50...250
Collector-emitter voltage: 160V
Frequency: 100...300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Polarisation: bipolar
Case: SOT26
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 50...250
Collector-emitter voltage: 160V
Frequency: 100...300MHz
на замовлення 2891 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 28.02 грн |
| 23+ | 18.80 грн |
| 50+ | 12.84 грн |
| 100+ | 10.83 грн |
| 500+ | 7.64 грн |
| 1000+ | 6.97 грн |
| BSS84Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
| BSS84Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.17 грн |
| BSS84W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1232 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.17 грн |
| 39+ | 10.83 грн |
| 54+ | 7.79 грн |
| 100+ | 6.84 грн |
| 500+ | 5.26 грн |
| 1000+ | 4.41 грн |
| BAW56T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 683 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 51+ | 8.31 грн |
| 107+ | 3.94 грн |
| 500+ | 2.56 грн |
| BAW56W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
на замовлення 2298 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.94 грн |
| 67+ | 6.29 грн |
| 112+ | 3.78 грн |
| 500+ | 2.56 грн |
| 1000+ | 2.19 грн |
| BAS16LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 95 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.75 грн |
| 50+ | 8.56 грн |
| AL5801W6-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...100V DC
Integrated circuit features: PWM
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...100V DC
Integrated circuit features: PWM
на замовлення 719 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.92 грн |
| 23+ | 18.97 грн |
| 25+ | 17.37 грн |
| 100+ | 16.45 грн |
| BC846BW-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
на замовлення 1350 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.85 грн |
| 69+ | 6.13 грн |
| 109+ | 3.85 грн |
| 500+ | 2.85 грн |
| 1000+ | 2.52 грн |
| LM2903QS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of comparator: universal
Case: SO8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
на замовлення 2292 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.85 грн |
| 52+ | 8.22 грн |
| 59+ | 7.22 грн |
| 60+ | 7.05 грн |
| BAT54AW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику
од. на суму грн.
| DMT6009LCT |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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| DMT6009LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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| DMT6009LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
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| DMT6009LPS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
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| DMT6009LSS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
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| DMT6010LFG-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
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| DMT6010LFG-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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| DMT6010LPS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
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