Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72991) > Сторінка 1190 з 1217
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| DDTC123ECA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 20 Quantity in set/package: 3000pcs. Frequency: 250MHz |
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| DDTC123EE-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 20 Quantity in set/package: 3000pcs. Frequency: 250MHz |
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BCP5510TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 63...160 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
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AS339MTR-G1 | DIODES INCORPORATED |
Category: SMD comparatorsDescription: IC: comparator; precision; Cmp: 4; SMT; SO14; reel,tape; 200nA Kind of output: open collector Operating temperature: -40...85°C Input offset current: 200nA Input offset voltage: 7mV Number of comparators: 4 Voltage supply range: ± 1...18V DC; 2...36V DC Kind of package: reel; tape Type of integrated circuit: comparator Case: SO14 Mounting: SMT Kind of comparator: precision |
на замовлення 3337 шт: термін постачання 14-30 дні (днів) |
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AS331KTR-G1 | DIODES INCORPORATED |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA Kind of output: open collector Operating temperature: -40...85°C Input offset current: 200nA Input offset voltage: 7mV Number of comparators: 1 Voltage supply range: ± 1...18V DC; 2...36V DC Kind of package: reel; tape Type of integrated circuit: comparator Case: SOT25 Mounting: SMT Kind of comparator: low-power |
на замовлення 2770 шт: термін постачання 14-30 дні (днів) |
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ZXTD718MCTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 3.5A Power dissipation: 2.45W Case: DFN3020B-8 Pulsed collector current: 6A Current gain: 15...475 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150...180MHz |
на замовлення 2673 шт: термін постачання 14-30 дні (днів) |
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| DDZ9685-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Tolerance: ±5% Kind of package: reel; tape |
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| DDZ9685Q-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| DMN3008SCP10-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10 Drain-source voltage: 30V Case: X4-DSN3015-10 Polarisation: unipolar On-state resistance: 7.8mΩ Power dissipation: 2.7W Type of transistor: N-MOSFET Mounting: SMD Gate charge: 15.8nC |
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В кошику од. на суму грн. | |||||||||||||||||
| DMN3009LFVQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 70A; 2W; PowerDI3333-8 Drain-source voltage: 30V Drain current: 70A Case: PowerDI3333-8 Polarisation: unipolar On-state resistance: 5.5mΩ Power dissipation: 2W Application: automotive industry Type of transistor: N-MOSFET Mounting: SMD Gate charge: 20nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN3018SFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; PowerDI3333-8 Drain-source voltage: 30V Drain current: 8.5A Case: PowerDI3333-8 Polarisation: unipolar On-state resistance: 21mΩ Application: automotive industry Type of transistor: N-MOSFET Mounting: SMD Gate charge: 6nC |
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В кошику од. на суму грн. | |||||||||||||||||
| DMN3069L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.3W; SOT23 Drain-source voltage: 30V Case: SOT23 Polarisation: unipolar On-state resistance: 30mΩ Power dissipation: 1.3W Type of transistor: N-MOSFET Mounting: SMD Gate charge: 4.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN33D8LTQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200mA; 300mW; SOT523 Drain-source voltage: 30V Drain current: 0.2A Case: SOT523 Polarisation: unipolar On-state resistance: 5Ω Power dissipation: 0.3W Application: automotive industry Type of transistor: N-MOSFET Mounting: SMD Gate charge: 0.55nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ZTX795A | DIODES INCORPORATED |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 140V; 0.5A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.5A Power dissipation: 1W Case: TO92 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 100MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| SMBJ30CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| 74LVC244AQ20-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; 8bit; Ch: 9; IN: 9; CMOS; SMD; V-QFN4525-20; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: 8bit Mounting: SMD Case: V-QFN4525-20 Operating temperature: -40...150°C Kind of package: reel; tape Supply voltage: 1.65...3.6V DC Number of channels: 9 Kind of output: push-pull Number of inputs: 9 Family: LVC Technology: CMOS |
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74LVC244AT20-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Mounting: SMD Case: TSSOP20 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 1.65...3.6V DC Number of channels: 8 Kind of output: 3-state Manufacturer series: LVC Technology: CMOS Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG2307LQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23 Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -3.6A Gate charge: 8.2nC On-state resistance: 0.134Ω Power dissipation: 1.9W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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| FL2400022 | DIODES INCORPORATED |
Category: Resonators and GeneratorsDescription: Resonator: ceramic; 10pF; SMD; ESR: 50Ω; 3.2x2.5mm; 24MHz; -25÷85°C Operating temperature: -25...85°C Frequency: 24MHz Type of resonator: ceramic Mounting: SMD Capacitance: 10pF Body dimensions: 3.2x2.5mm ESR value: 50Ω |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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DF04M | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 1A Max. forward impulse current: 50A Case: DFM Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: THT |
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В кошику од. на суму грн. | ||||||||||||||||
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GBU1006 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 61 шт: термін постачання 14-30 дні (днів) |
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AP3015AKTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 1÷12VDC; Uout: 1.23÷34VDC; 0.1A; SOT25 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 1...12V DC Output voltage: 1.23...34V DC Output current: 0.1A Case: SOT25 Mounting: SMD Frequency: 150kHz Topology: boost Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 81% |
на замовлення 1101 шт: термін постачання 14-30 дні (днів) |
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| DMN3032LFDBQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Pulsed drain current: 25A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 10.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| DMN3032LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Pulsed drain current: 25A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 10.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
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1N4003G-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; DO41; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Capacitance: 8pF Reverse recovery time: 2µs |
на замовлення 800 шт: термін постачання 14-30 дні (днів) |
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DMP3050LVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -25A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±25V On-state resistance: 50mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||
| DMP3050LVTQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -25A Power dissipation: 1W Case: TSOT26 Gate-source voltage: ±25V On-state resistance: 50mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
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DMP3050LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Pulsed drain current: -30A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DXTP03140BFG-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 140V; 4A; 1.07W; PowerDI®3333-8 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 4A Power dissipation: 1.07W Case: PowerDI®3333-8 Mounting: SMD Frequency: 120MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| ZXTP23140BFHTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 140V; 2.5A; 1.25W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 2.5A Power dissipation: 1.25W Case: SOT23 Pulsed collector current: 5A Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 130MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAV170T-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT523 Max. forward voltage: 1.1V Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 2520 шт: термін постачання 14-30 дні (днів) |
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BAV170Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.125A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Capacitance: 2pF Features of semiconductor devices: small signal Application: automotive industry Max. load current: 0.5A |
на замовлення 9750 шт: термін постачання 14-30 дні (днів) |
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BAV170-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: small signal Max. load current: 0.5A |
на замовлення 465 шт: термін постачання 14-30 дні (днів) |
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| BAV170Q-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| KBP304G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat Electrical mounting: THT Kind of package: tube Type of bridge rectifier: single-phase Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 90A Max. off-state voltage: 0.4kV Case: KBP Features of semiconductor devices: glass passivated Version: flat Leads: flat pin |
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В кошику од. на суму грн. | |||||||||||||||||
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BZT52C5V6SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||
| BZT52C5V6LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
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В кошику од. на суму грн. | |||||||||||||||||
| BZT52C5V6TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74LVC1G07W5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: open drain Supply voltage: 1.65...5.5V DC Quiescent current: 200µA Manufacturer series: LVC |
на замовлення 2032 шт: термін постачання 14-30 дні (днів) |
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1SMB5949B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 100V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
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В кошику од. на суму грн. | ||||||||||||||||
| DMHT10H032LFJ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 100V; 6A Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 6A On-state resistance: 25mΩ Mounting: SMD Gate charge: 11.9nC Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| DMTH4005SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 320A Power dissipation: 150W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 49.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMP4047LFDE-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6 Kind of package: 7 inch reel; tape Case: U-DFN2020-6 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.9A On-state resistance: 50mΩ Power dissipation: 0.7W Gate-source voltage: ±20V |
на замовлення 3233 шт: термін постачання 14-30 дні (днів) |
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DMP4047SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252 Kind of package: 13 inch reel; tape Case: TO252 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -18A On-state resistance: 55mΩ Power dissipation: 1.6W Gate-source voltage: ±20V |
на замовлення 1651 шт: термін постачання 14-30 дні (днів) |
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DMC4047LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 6.3/-6.3A On-state resistance: 0.024/0.04Ω Power dissipation: 1.3W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMP4047LFDEQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W Kind of package: 7 inch reel; tape Case: U-DFN2020-6 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Pulsed drain current: -36A Drain current: -5.2A Gate charge: 24.9nC On-state resistance: 50mΩ Power dissipation: 2.1W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP4047LFDEQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W Kind of package: 13 inch reel; tape Application: automotive industry Case: U-DFN2020-6 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Pulsed drain current: -36A Drain current: -5.2A Gate charge: 24.9nC On-state resistance: 50mΩ Power dissipation: 2.1W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMCJ28CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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| SMCJ28CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMN3150L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23 Case: SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 54mΩ Power dissipation: 1.4W Drain current: 3.1A Gate-source voltage: ±12V Pulsed drain current: 15A Drain-source voltage: 30V Kind of package: 7 inch reel; tape |
на замовлення 2845 шт: термін постачання 14-30 дні (днів) |
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ZVN3310FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.1A; Idm: 2A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.1A Pulsed drain current: 2A Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 680 шт: термін постачання 14-30 дні (днів) |
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DMN10H220L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.22Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN10H220LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.7A Pulsed drain current: 30A Power dissipation: 7.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 6.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 1206 шт: термін постачання 14-30 дні (днів) |
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BCX5210TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZLLS410TA | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 10V; 1.35A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 10V Load current: 1.35A Semiconductor structure: single diode Max. forward voltage: 0.38V Max. forward impulse current: 17A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCP5610TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP2240UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Power dissipation: 0.6W Case: SOT26 Gate-source voltage: ±12V Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 5802 шт: термін постачання 14-30 дні (днів) |
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DMP2240UW-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -5A Drain current: -1A On-state resistance: 0.15Ω Power dissipation: 0.25W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape |
на замовлення 437 шт: термін постачання 14-30 дні (днів) |
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MMBD4148-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 2A Capacitance: 2pF Max. load current: 0.3A |
на замовлення 739 шт: термін постачання 14-30 дні (днів) |
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| MMBD4148TW-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: triple independent Features of semiconductor devices: small signal Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape |
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В кошику од. на суму грн. |
| DDTC123ECA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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| DDTC123EE-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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| BCP5510TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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| AS339MTR-G1 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 4; SMT; SO14; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 4
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SO14
Mounting: SMT
Kind of comparator: precision
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 4; SMT; SO14; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 4
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SO14
Mounting: SMT
Kind of comparator: precision
на замовлення 3337 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.91 грн |
| 25+ | 17.61 грн |
| 30+ | 14.39 грн |
| 100+ | 10.67 грн |
| 250+ | 8.89 грн |
| 500+ | 8.72 грн |
| AS331KTR-G1 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SOT25
Mounting: SMT
Kind of comparator: low-power
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; SMT; SOT25; reel,tape; 200nA
Kind of output: open collector
Operating temperature: -40...85°C
Input offset current: 200nA
Input offset voltage: 7mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SOT25
Mounting: SMT
Kind of comparator: low-power
на замовлення 2770 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.50 грн |
| 36+ | 11.85 грн |
| 41+ | 10.41 грн |
| 48+ | 8.97 грн |
| 100+ | 7.36 грн |
| 250+ | 6.69 грн |
| 500+ | 6.43 грн |
| ZXTD718MCTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 3.5A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3.5A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 15...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...180MHz
на замовлення 2673 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.26 грн |
| 10+ | 48.67 грн |
| 100+ | 34.45 грн |
| 500+ | 26.75 грн |
| 1000+ | 26.41 грн |
| DDZ9685-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Kind of package: reel; tape
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| DDZ9685Q-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| DMN3008SCP10-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10
Drain-source voltage: 30V
Case: X4-DSN3015-10
Polarisation: unipolar
On-state resistance: 7.8mΩ
Power dissipation: 2.7W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 15.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10
Drain-source voltage: 30V
Case: X4-DSN3015-10
Polarisation: unipolar
On-state resistance: 7.8mΩ
Power dissipation: 2.7W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 15.8nC
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| DMN3009LFVQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 2W; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 70A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 2W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 20nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 2W; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 70A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 2W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 20nC
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| DMN3018SFGQ-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 8.5A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 21mΩ
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; PowerDI3333-8
Drain-source voltage: 30V
Drain current: 8.5A
Case: PowerDI3333-8
Polarisation: unipolar
On-state resistance: 21mΩ
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 6nC
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| DMN3069L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.3W; SOT23
Drain-source voltage: 30V
Case: SOT23
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 1.3W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 4.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.3W; SOT23
Drain-source voltage: 30V
Case: SOT23
Polarisation: unipolar
On-state resistance: 30mΩ
Power dissipation: 1.3W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 4.3nC
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| DMN33D8LTQ-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200mA; 300mW; SOT523
Drain-source voltage: 30V
Drain current: 0.2A
Case: SOT523
Polarisation: unipolar
On-state resistance: 5Ω
Power dissipation: 0.3W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 0.55nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200mA; 300mW; SOT523
Drain-source voltage: 30V
Drain current: 0.2A
Case: SOT523
Polarisation: unipolar
On-state resistance: 5Ω
Power dissipation: 0.3W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 0.55nC
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| ZTX795A |
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Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 140V; 0.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 140V; 0.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
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| SMBJ30CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| 74LVC244AQ20-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 9; IN: 9; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...3.6V DC
Number of channels: 9
Kind of output: push-pull
Number of inputs: 9
Family: LVC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit; Ch: 9; IN: 9; CMOS; SMD; V-QFN4525-20; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...3.6V DC
Number of channels: 9
Kind of output: push-pull
Number of inputs: 9
Family: LVC
Technology: CMOS
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| 74LVC244AT20-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...3.6V DC
Number of channels: 8
Kind of output: 3-state
Manufacturer series: LVC
Technology: CMOS
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...3.6V DC
Number of channels: 8
Kind of output: 3-state
Manufacturer series: LVC
Technology: CMOS
Quiescent current: 40µA
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| DMG2307LQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 8.2nC
On-state resistance: 0.134Ω
Power dissipation: 1.9W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 8.2nC
On-state resistance: 0.134Ω
Power dissipation: 1.9W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 49 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.82 грн |
| 20+ | 22.18 грн |
| FL2400022 |
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Виробник: DIODES INCORPORATED
Category: Resonators and Generators
Description: Resonator: ceramic; 10pF; SMD; ESR: 50Ω; 3.2x2.5mm; 24MHz; -25÷85°C
Operating temperature: -25...85°C
Frequency: 24MHz
Type of resonator: ceramic
Mounting: SMD
Capacitance: 10pF
Body dimensions: 3.2x2.5mm
ESR value: 50Ω
Category: Resonators and Generators
Description: Resonator: ceramic; 10pF; SMD; ESR: 50Ω; 3.2x2.5mm; 24MHz; -25÷85°C
Operating temperature: -25...85°C
Frequency: 24MHz
Type of resonator: ceramic
Mounting: SMD
Capacitance: 10pF
Body dimensions: 3.2x2.5mm
ESR value: 50Ω
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 26.98 грн |
| DF04M |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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| GBU1006 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 61 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 140.39 грн |
| 5+ | 104.12 грн |
| 10+ | 90.58 грн |
| 20+ | 78.73 грн |
| AP3015AKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1÷12VDC; Uout: 1.23÷34VDC; 0.1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1...12V DC
Output voltage: 1.23...34V DC
Output current: 0.1A
Case: SOT25
Mounting: SMD
Frequency: 150kHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 81%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1÷12VDC; Uout: 1.23÷34VDC; 0.1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1...12V DC
Output voltage: 1.23...34V DC
Output current: 0.1A
Case: SOT25
Mounting: SMD
Frequency: 150kHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 81%
на замовлення 1101 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.11 грн |
| 16+ | 26.83 грн |
| 25+ | 23.96 грн |
| 100+ | 20.91 грн |
| 250+ | 19.55 грн |
| 500+ | 18.71 грн |
| DMN3032LFDBQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMN3032LFDBQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| 1N4003G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 8pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 8pF
Reverse recovery time: 2µs
на замовлення 800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.76 грн |
| 55+ | 7.79 грн |
| 100+ | 5.34 грн |
| 500+ | 4.11 грн |
| DMP3050LVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP3050LVTQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -25A
Power dissipation: 1W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -25A
Power dissipation: 1W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP3050LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DXTP03140BFG-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1.07W; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 4A
Power dissipation: 1.07W
Case: PowerDI®3333-8
Mounting: SMD
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1.07W; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 4A
Power dissipation: 1.07W
Case: PowerDI®3333-8
Mounting: SMD
Frequency: 120MHz
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| ZXTP23140BFHTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 2.5A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 2.5A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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| BAV170T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2520 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 72+ | 5.93 грн |
| 75+ | 5.67 грн |
| 100+ | 4.44 грн |
| 500+ | 3.66 грн |
| 1000+ | 3.34 грн |
| BAV170Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
на замовлення 9750 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.18 грн |
| 500+ | 1.92 грн |
| 2500+ | 1.73 грн |
| BAV170-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
на замовлення 465 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.12 грн |
| 120+ | 3.56 грн |
| 151+ | 2.81 грн |
| BAV170Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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| KBP304G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Electrical mounting: THT
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Max. off-state voltage: 0.4kV
Case: KBP
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 3A; Ifsm: 90A; flat
Electrical mounting: THT
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 90A
Max. off-state voltage: 0.4kV
Case: KBP
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
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| BZT52C5V6SQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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| BZT52C5V6LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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| BZT52C5V6TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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| 74LVC1G07W5-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
на замовлення 2032 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.12 грн |
| 65+ | 6.60 грн |
| 72+ | 5.93 грн |
| 85+ | 5.01 грн |
| 105+ | 4.04 грн |
| 250+ | 3.63 грн |
| 500+ | 3.40 грн |
| 1000+ | 3.24 грн |
| 1SMB5949B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
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| DMHT10H032LFJ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 6A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 6A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 51.96 грн |
| DMTH4005SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 320A
Power dissipation: 150W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 49.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 320A
Power dissipation: 150W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 49.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMP4047LFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Power dissipation: 0.7W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Power dissipation: 0.7W
Gate-source voltage: ±20V
на замовлення 3233 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.05 грн |
| 13+ | 34.28 грн |
| 50+ | 24.13 грн |
| 100+ | 20.82 грн |
| 500+ | 15.24 грн |
| 1000+ | 14.48 грн |
| DMP4047SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: 13 inch reel; tape
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: 13 inch reel; tape
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
на замовлення 1651 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.81 грн |
| 12+ | 35.98 грн |
| 100+ | 23.79 грн |
| 500+ | 18.37 грн |
| 1000+ | 16.59 грн |
| DMC4047LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Power dissipation: 1.3W
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Power dissipation: 1.3W
Gate-source voltage: ±20V
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| DMP4047LFDEQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
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| DMP4047LFDEQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Pulsed drain current: -36A
Drain current: -5.2A
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
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| SMCJ28CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.73 грн |
| 17+ | 26.33 грн |
| 100+ | 19.22 грн |
| 300+ | 16.25 грн |
| 500+ | 15.07 грн |
| 1000+ | 13.46 грн |
| SMCJ28CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| DMN3150L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 54mΩ
Power dissipation: 1.4W
Drain current: 3.1A
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 54mΩ
Power dissipation: 1.4W
Drain current: 3.1A
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
на замовлення 2845 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.17 грн |
| 22+ | 19.55 грн |
| 100+ | 11.34 грн |
| 500+ | 7.87 грн |
| 1000+ | 6.94 грн |
| ZVN3310FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; Idm: 2A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Pulsed drain current: 2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.1A; Idm: 2A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.1A
Pulsed drain current: 2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 680 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.87 грн |
| 13+ | 34.11 грн |
| 100+ | 23.53 грн |
| 300+ | 20.15 грн |
| 500+ | 18.71 грн |
| DMN10H220L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN10H220LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1206 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.58 грн |
| 14+ | 30.47 грн |
| 100+ | 17.52 грн |
| 500+ | 12.53 грн |
| 1000+ | 11.26 грн |
| BCX5210TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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| ZLLS410TA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 1.35A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 1.35A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 17A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 1.35A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 1.35A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 17A
Kind of package: reel; tape
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| BCP5610TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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| DMP2240UDM-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 5802 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.35 грн |
| 26+ | 16.76 грн |
| 100+ | 12.87 грн |
| DMP2240UW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -5A
Drain current: -1A
On-state resistance: 0.15Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -5A
Drain current: -1A
On-state resistance: 0.15Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
на замовлення 437 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.11 грн |
| 16+ | 26.50 грн |
| 100+ | 15.24 грн |
| MMBD4148-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 2pF
Max. load current: 0.3A
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 2pF
Max. load current: 0.3A
на замовлення 739 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 97+ | 4.40 грн |
| 107+ | 3.98 грн |
| 141+ | 3.01 грн |
| 161+ | 2.63 грн |
| 500+ | 1.82 грн |
| MMBD4148TW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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