Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71643) > Сторінка 1190 з 1195
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MMDT2907A-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 60V; 0.6A; 200mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.2W Case: SOT363 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ZXMP4A16GTA | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -5.1A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5.1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 599 шт: термін постачання 14-30 дні (днів) |
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DMN6068SE-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 316 шт: термін постачання 14-30 дні (днів) |
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| 74LVC1G125FS3-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN0808-4 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.65...5.5V DC Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP1534SG-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8 Input voltage: 4.4...18V DC Output voltage: 0.8...18V DC Output current: 2A Case: SOP8 Mounting: SMD Efficiency: 91% Operating temperature: -20...85°C Type of integrated circuit: PMIC Topology: buck Kind of package: reel; tape Frequency: 300kHz Kind of integrated circuit: DC/DC converter |
на замовлення 2479 шт: термін постачання 14-30 дні (днів) |
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| SBR6200CTL-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape Mounting: SMD Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Kind of package: reel; tape Technology: SBR® Max. forward voltage: 0.85V Load current: 3A x2 Max. forward impulse current: 80A Max. off-state voltage: 200V Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP1200UFR4-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3 Case: X2-DFN1010-3 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Gate charge: 5.8nC On-state resistance: 0.38Ω Kind of channel: enhancement Power dissipation: 1.26W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP2200UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W Case: U-DFN1616-6 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -8A Drain current: -1.2A Gate charge: 2.2nC On-state resistance: 0.65Ω Kind of channel: enhancement Power dissipation: 1.58W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ36CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ36CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMDT2222A-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Current gain: 35...300 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ16CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 4281 шт: термін постачання 14-30 дні (днів) |
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| SMAJ16CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ZUMT617TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 15V; 1.5A; 500mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 1.5A Power dissipation: 0.5W Case: SOT323 Pulsed collector current: 5A Current gain: 30...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMCJ58A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SMCJ58AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PAM8303CBSC | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1 Amplifier class: D Number of channels: 1 Integrated circuit features: low noise; thermal protection Case: MSOP8 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output power: 3W Voltage supply range: 2.8...5.5V DC Type of integrated circuit: audio amplifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PAM8303DBSC | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1; MSOP8 Amplifier class: D Number of channels: 1 Integrated circuit features: thermal protection Case: MSOP8 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output power: 3W Voltage supply range: 2.8...5.5V DC Type of integrated circuit: audio amplifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PAM8303DBYC | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1 Amplifier class: D Number of channels: 1 Integrated circuit features: thermal protection Case: U-DFN3030-8 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output power: 3W Voltage supply range: 2.8...5.5V DC Type of integrated circuit: audio amplifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PDS340-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape Mounting: SMD Case: PowerDI®5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 25mA Max. forward voltage: 0.61V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PDS340Q-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape Mounting: SMD Case: PowerDI®5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 25mA Max. forward voltage: 0.61V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 90A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ZR431F01TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 5356 шт: термін постачання 14-30 дні (днів) |
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ZR431F005TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 150mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 150mA |
на замовлення 259 шт: термін постачання 14-30 дні (днів) |
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AS431AZTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±0.5%; TO92; Ammo Pack,tape Mounting: THT Operating temperature: -40...125°C Case: TO92 Type of integrated circuit: voltage reference source Maximum output current: 0.1A Tolerance: ±0.5% Reference voltage: 2.5V Operating voltage: 2.5...36V Kind of package: Ammo Pack; tape |
на замовлення 1988 шт: термін постачання 14-30 дні (днів) |
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DDC114YU-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ Case: SOT363 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. Collector current: 70mA Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 |
на замовлення 4339 шт: термін постачання 14-30 дні (днів) |
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DDC144EU-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 30mA; 200mW; SOT363; R1: 47kΩ Case: SOT363 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. Collector current: 30mA Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 100...600 Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 |
на замовлення 700 шт: термін постачання 14-30 дні (днів) |
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DDC114EU-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ Case: SOT363 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 |
на замовлення 2021 шт: термін постачання 14-30 дні (днів) |
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DMP610DL-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.13A Pulsed drain current: -1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 560pC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 813 шт: термін постачання 14-30 дні (днів) |
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DMP610DLQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.13A Pulsed drain current: -1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 560pC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP610DL-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.13A Pulsed drain current: -1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 560pC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PDS5100-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.79V Leakage current: 5mA Max. forward impulse current: 120A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PDS5100H-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 4.5mA Max. forward impulse current: 250A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PDS5100HQ-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 4.5mA Max. forward impulse current: 250A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PDS5100HQ-13D | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 4.5mA Max. forward impulse current: 250A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PDS5100Q-13D | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 4.5mA Max. forward impulse current: 250A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C6V8-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.8V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 409 шт: термін постачання 14-30 дні (днів) |
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AZ23C6V8-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMPH6250SQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -13A Power dissipation: 1.62W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMPH6250SQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -13A Power dissipation: 1.62W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DDZ30CSF-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323F Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ90A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 100÷111V; 2.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3495 шт: термін постачання 14-30 дні (днів) |
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MBRB10100CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO263AB Max. forward voltage: 0.84V Max. forward impulse current: 110A Leakage current: 10mA Kind of package: reel; tape |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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| MBRD10100CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: DPAK Max. forward voltage: 0.84V Max. forward impulse current: 110A Leakage current: 10mA Kind of package: reel; tape |
товару немає в наявності |
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| MBRB10100CT | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.84V Max. forward impulse current: 110A Leakage current: 10mA Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||
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DMG6601LVT-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3/-2A Power dissipation: 0.54W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.065/0.142Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 547 шт: термін постачання 14-30 дні (днів) |
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B140HW-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward voltage: 0.51V Load current: 1A Max. forward impulse current: 16A Max. off-state voltage: 40V |
на замовлення 2923 шт: термін постачання 14-30 дні (днів) |
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B140B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Capacitance: 0.11nF Max. forward voltage: 0.5V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V |
на замовлення 2555 шт: термін постачання 14-30 дні (днів) |
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B140HB-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Capacitance: 80pF Max. forward voltage: 0.49V Load current: 1A Max. forward impulse current: 45A Max. off-state voltage: 40V |
на замовлення 2761 шт: термін постачання 14-30 дні (днів) |
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DDZ9678-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 1.8V |
на замовлення 5885 шт: термін постачання 14-30 дні (днів) |
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AP7354D-18W5-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 1.8V Output current: 0.15A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...5.5V Integrated circuit features: output discharge; shutdown mode control input Manufacturer series: AP7354 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| DMN10H120SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.5W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Gate charge: 10.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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| DMN10H120SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.5W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Gate charge: 10.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
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AS358MTR-G1 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV; 550mW Type of integrated circuit: operational amplifier Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...85°C Open-loop gain: 100dB Integrated circuit features: low power Input offset voltage: 2mV Kind of package: reel; tape Power dissipation: 0.55W |
на замовлення 1851 шт: термін постачання 14-30 дні (днів) |
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| AS358MTR-E1 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power Type of integrated circuit: operational amplifier Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 100nA |
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| AS358MMTR-G1 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape Type of integrated circuit: operational amplifier Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: MSOP8 Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 100nA |
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В кошику од. на суму грн. | |||||||||||||||||
| FMMT617 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 3A Power dissipation: 0.625W Case: SOT23 Current gain: 80...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 120MHz |
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В кошику од. на суму грн. | |||||||||||||||||
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FMMT617TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 3A Power dissipation: 0.625W Case: SOT23 Current gain: 80...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 120MHz |
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В кошику од. на суму грн. | ||||||||||||||||
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AP1506-50K5G-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 5VDC; 3A; TO263-5; SMD Kind of package: reel; tape Topology: buck Kind of integrated circuit: DC/DC converter Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -20...85°C Output current: 3A Input voltage: 4.5...22V DC Output voltage: 5V DC Efficiency: 80% Frequency: 150kHz Case: TO263-5 |
на замовлення 463 шт: термін постачання 14-30 дні (днів) |
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GBJ1506-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A Version: flat Kind of package: tube Leads: flat pin Electrical mounting: THT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 15A Max. forward impulse current: 0.24kA Max. off-state voltage: 0.6kV Case: GBJ |
на замовлення 107 шт: термін постачання 14-30 дні (днів) |
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DDTC143ECA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 20 Quantity in set/package: 3000pcs. |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| MMDT2907A-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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| ZXMP4A16GTA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 599 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 85.86 грн |
| 10+ | 49.85 грн |
| 50+ | 37.52 грн |
| 100+ | 33.49 грн |
| 200+ | 29.88 грн |
| 500+ | 26.10 грн |
| DMN6068SE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 316 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.58 грн |
| 16+ | 27.44 грн |
| 50+ | 18.80 грн |
| 100+ | 16.03 грн |
| 250+ | 13.18 грн |
| 74LVC1G125FS3-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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| AP1534SG-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Efficiency: 91%
Operating temperature: -20...85°C
Type of integrated circuit: PMIC
Topology: buck
Kind of package: reel; tape
Frequency: 300kHz
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Input voltage: 4.4...18V DC
Output voltage: 0.8...18V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Efficiency: 91%
Operating temperature: -20...85°C
Type of integrated circuit: PMIC
Topology: buck
Kind of package: reel; tape
Frequency: 300kHz
Kind of integrated circuit: DC/DC converter
на замовлення 2479 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.42 грн |
| 13+ | 34.49 грн |
| 25+ | 31.14 грн |
| 100+ | 29.46 грн |
| SBR6200CTL-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Mounting: SMD
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: SBR®
Max. forward voltage: 0.85V
Load current: 3A x2
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Case: DPAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Mounting: SMD
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: SBR®
Max. forward voltage: 0.85V
Load current: 3A x2
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Case: DPAK
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| DMP1200UFR4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3
Case: X2-DFN1010-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Gate charge: 5.8nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Power dissipation: 1.26W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3
Case: X2-DFN1010-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Gate charge: 5.8nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Power dissipation: 1.26W
Gate-source voltage: ±8V
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| DMP2200UFCL-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Power dissipation: 1.58W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Power dissipation: 1.58W
Gate-source voltage: ±8V
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| SMBJ36CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMBJ36CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| MMDT2222A-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 35...300
Quantity in set/package: 3000pcs.
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| SMAJ16CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4281 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.04 грн |
| 53+ | 8.06 грн |
| 56+ | 7.55 грн |
| 100+ | 5.56 грн |
| 500+ | 4.67 грн |
| 1000+ | 4.52 грн |
| SMAJ16CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| ZUMT617TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 1.5A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 5A
Current gain: 30...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 1.5A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 5A
Current gain: 30...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
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| SMCJ58A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMCJ58AQ-13-F |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| PAM8303CBSC |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Amplifier class: D
Number of channels: 1
Integrated circuit features: low noise; thermal protection
Case: MSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Amplifier class: D
Number of channels: 1
Integrated circuit features: low noise; thermal protection
Case: MSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
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| PAM8303DBSC |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1; MSOP8
Amplifier class: D
Number of channels: 1
Integrated circuit features: thermal protection
Case: MSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1; MSOP8
Amplifier class: D
Number of channels: 1
Integrated circuit features: thermal protection
Case: MSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
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| PAM8303DBYC |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1
Amplifier class: D
Number of channels: 1
Integrated circuit features: thermal protection
Case: U-DFN3030-8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1
Amplifier class: D
Number of channels: 1
Integrated circuit features: thermal protection
Case: U-DFN3030-8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...5.5V DC
Type of integrated circuit: audio amplifier
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| PDS340-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 25mA
Max. forward voltage: 0.61V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 90A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 25mA
Max. forward voltage: 0.61V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 90A
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| PDS340Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 25mA
Max. forward voltage: 0.61V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 90A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 25mA
Max. forward voltage: 0.61V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 90A
Application: automotive industry
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| ZR431F01TA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 5356 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.11 грн |
| 24+ | 17.79 грн |
| 27+ | 15.86 грн |
| 100+ | 15.78 грн |
| ZR431F005TA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 150mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 150mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 150mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 150mA
на замовлення 259 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.25 грн |
| 19+ | 23.08 грн |
| 25+ | 20.81 грн |
| 100+ | 18.21 грн |
| 250+ | 17.04 грн |
| AS431AZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; TO92; Ammo Pack,tape
Mounting: THT
Operating temperature: -40...125°C
Case: TO92
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.5V
Operating voltage: 2.5...36V
Kind of package: Ammo Pack; tape
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; TO92; Ammo Pack,tape
Mounting: THT
Operating temperature: -40...125°C
Case: TO92
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.5V
Operating voltage: 2.5...36V
Kind of package: Ammo Pack; tape
на замовлення 1988 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| 74+ | 5.71 грн |
| 81+ | 5.20 грн |
| 96+ | 4.40 грн |
| 118+ | 3.57 грн |
| 250+ | 3.32 грн |
| DDC114YU-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 70mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 70mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
на замовлення 4339 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.04 грн |
| 65+ | 6.46 грн |
| 89+ | 4.73 грн |
| 102+ | 4.13 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.80 грн |
| 3000+ | 2.55 грн |
| DDC144EU-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 30mA; 200mW; SOT363; R1: 47kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 30mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 30mA; 200mW; SOT363; R1: 47kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 30mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
на замовлення 700 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.75 грн |
| 57+ | 7.47 грн |
| 100+ | 4.74 грн |
| 500+ | 3.29 грн |
| DDC114EU-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
на замовлення 2021 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.56 грн |
| 53+ | 7.97 грн |
| 100+ | 5.25 грн |
| 500+ | 4.19 грн |
| 1000+ | 3.81 грн |
| DMP610DL-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 813 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 50+ | 8.39 грн |
| 100+ | 4.64 грн |
| 500+ | 3.05 грн |
| DMP610DLQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMP610DL-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.13A
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 560pC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| PDS5100-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
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| PDS5100H-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
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| PDS5100HQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| PDS5100HQ-13D |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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| PDS5100Q-13D |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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| BZX84C6V8-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 409 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 120+ | 3.52 грн |
| 215+ | 1.96 грн |
| AZ23C6V8-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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| DMPH6250SQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMPH6250SQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DDZ30CSF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
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| SMAJ90A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3495 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.17 грн |
| 37+ | 11.41 грн |
| 45+ | 9.37 грн |
| 100+ | 6.89 грн |
| 500+ | 5.07 грн |
| 1000+ | 4.46 грн |
| MBRB10100CT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO263AB
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
на замовлення 67 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.33 грн |
| 13+ | 33.91 грн |
| MBRD10100CT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: reel; tape
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| MBRB10100CT |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Leakage current: 10mA
Kind of package: tube
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| DMG6601LVT-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 547 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.21 грн |
| 24+ | 17.88 грн |
| 50+ | 12.34 грн |
| 100+ | 10.41 грн |
| 500+ | 7.30 грн |
| B140HW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.51V
Load current: 1A
Max. forward impulse current: 16A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.51V
Load current: 1A
Max. forward impulse current: 16A
Max. off-state voltage: 40V
на замовлення 2923 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.08 грн |
| 32+ | 13.43 грн |
| 35+ | 12.00 грн |
| 100+ | 8.22 грн |
| 500+ | 6.04 грн |
| 1000+ | 5.46 грн |
| B140B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
на замовлення 2555 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.17 грн |
| 37+ | 11.41 грн |
| 50+ | 9.01 грн |
| 100+ | 8.11 грн |
| 500+ | 6.23 грн |
| 1000+ | 5.50 грн |
| 2500+ | 4.62 грн |
| B140HB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.49V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 80pF
Max. forward voltage: 0.49V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 40V
на замовлення 2761 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.60 грн |
| 26+ | 16.37 грн |
| 32+ | 13.51 грн |
| 100+ | 9.57 грн |
| 125+ | 9.06 грн |
| 500+ | 6.71 грн |
| DDZ9678-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
на замовлення 5885 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.85 грн |
| 66+ | 6.38 грн |
| 112+ | 3.76 грн |
| 500+ | 2.79 грн |
| 600+ | 2.71 грн |
| 1000+ | 2.52 грн |
| 3000+ | 2.22 грн |
| AP7354D-18W5-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: output discharge; shutdown mode control input
Manufacturer series: AP7354
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: output discharge; shutdown mode control input
Manufacturer series: AP7354
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.40 грн |
| 27+ | 15.95 грн |
| 30+ | 14.10 грн |
| 100+ | 12.25 грн |
| 250+ | 11.67 грн |
| 500+ | 11.25 грн |
| 1000+ | 10.83 грн |
| 3000+ | 10.74 грн |
| DMN10H120SFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMN10H120SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| AS358MTR-G1 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV; 550mW
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV; 550mW
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
на замовлення 1851 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.94 грн |
| 65+ | 6.46 грн |
| 75+ | 5.64 грн |
| 100+ | 4.62 грн |
| 250+ | 4.11 грн |
| 500+ | 3.79 грн |
| 1000+ | 3.54 грн |
| AS358MTR-E1 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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| AS358MMTR-G1 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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од. на суму грн.
| FMMT617 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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од. на суму грн.
| FMMT617TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
товару немає в наявності
В кошику
од. на суму грн.
| AP1506-50K5G-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 5VDC; 3A; TO263-5; SMD
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -20...85°C
Output current: 3A
Input voltage: 4.5...22V DC
Output voltage: 5V DC
Efficiency: 80%
Frequency: 150kHz
Case: TO263-5
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 5VDC; 3A; TO263-5; SMD
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -20...85°C
Output current: 3A
Input voltage: 4.5...22V DC
Output voltage: 5V DC
Efficiency: 80%
Frequency: 150kHz
Case: TO263-5
на замовлення 463 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 84.77 грн |
| 25+ | 77.21 грн |
| 100+ | 74.69 грн |
| GBJ1506-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Version: flat
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 15A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 0.6kV
Case: GBJ
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Version: flat
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 15A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 0.6kV
Case: GBJ
на замовлення 107 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.75 грн |
| 10+ | 88.12 грн |
| 15+ | 83.93 грн |
| 75+ | 68.82 грн |
| 105+ | 64.62 грн |
| DDTC143ECA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.85 грн |
| 63+ | 6.71 грн |
| 100+ | 4.25 грн |
| 500+ | 3.29 грн |
| 1000+ | 2.95 грн |
| 3000+ | 2.43 грн |















