Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74622) > Сторінка 1190 з 1244
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| DMT6005LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 47.1nC On-state resistance: 6.5mΩ Power dissipation: 2.6W Drain current: 14.7A Gate-source voltage: ±20V Pulsed drain current: 500A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMT6006LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 34.9nC On-state resistance: 10mΩ Power dissipation: 3.1W Drain current: 71A Gate-source voltage: ±20V Pulsed drain current: 350A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMT6006LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 34.9nC On-state resistance: 10mΩ Power dissipation: 2.08W Drain current: 11.7A Gate-source voltage: ±20V Pulsed drain current: 110A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DMT6006SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 27.9nC On-state resistance: 6.2mΩ Power dissipation: 2.45W Drain current: 13A Gate-source voltage: ±20V Pulsed drain current: 390A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMT6007LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 8.5mΩ Power dissipation: 2.2W Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMT6007LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 8.5mΩ Power dissipation: 2.2W Drain current: 70A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement |
на замовлення 1851 шт: термін постачання 21-30 дні (днів) |
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| DMT6007LFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 8.5mΩ Power dissipation: 2.2W Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMT6007LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 8.5mΩ Power dissipation: 2.2W Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMT6008LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 50.4nC On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±12V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMT6008LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 50.4nC On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±12V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMBJ30A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 4630 шт: термін постачання 21-30 дні (днів) |
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AP2112K-1.2TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 0.6A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP2112K-2.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD Kind of package: reel; tape Case: SOT23-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Integrated circuit features: shutdown mode control input Operating temperature: -40...85°C Output current: 0.6A Voltage drop: 0.4V Number of channels: 1 Tolerance: ±1.5% Output voltage: 2.5V Input voltage: 2.5...6V |
на замовлення 2930 шт: термін постачання 21-30 дні (днів) |
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SMAJ58A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 444 шт: термін постачання 21-30 дні (днів) |
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DMC3021LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-8.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.021/0.039Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 2506 шт: термін постачання 21-30 дні (днів) |
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SMAJ6.5A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2135 шт: термін постачання 21-30 дні (днів) |
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BSS127S-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23 Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Drain current: 70mA Power dissipation: 0.61W On-state resistance: 160Ω Gate-source voltage: ±20V Drain-source voltage: 600V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 2386 шт: термін постачання 21-30 дні (днів) |
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SMBJ58A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.6V Max. forward impulse current: 6.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2415 шт: термін постачання 21-30 дні (днів) |
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74HCT125S14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: SO14 Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Kind of output: 3-state Manufacturer series: HCT Quiescent current: 40µA |
на замовлення 1369 шт: термін постачання 21-30 дні (днів) |
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TL431ASA-7 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 2892 шт: термін постачання 21-30 дні (днів) |
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| PAM8902HKER | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC Case: QFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Voltage supply range: 2.5...5.5V DC Amplifier class: D Type of integrated circuit: audio amplifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PAM8904EGPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC Case: WQFN12 Kind of integrated circuit: piezo sounder Kind of package: reel; tape Mounting: SMD Operating temperature: -40...150°C Number of channels: 1 Voltage supply range: 1.5...5.5V DC Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PAM8904EJER | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC Case: UQFN16 Kind of integrated circuit: piezo sounder Kind of package: reel; tape Mounting: SMD Operating temperature: -40...150°C Number of channels: 1 Voltage supply range: 1.5...5.5V DC Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PAM8904EJPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC Case: UQFN12 Kind of integrated circuit: piezo sounder Kind of package: reel; tape Mounting: SMD Operating temperature: -40...150°C Number of channels: 1 Voltage supply range: 1.5...5.5V DC Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PAM8904JER | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC Case: UQFN16 Kind of integrated circuit: piezo sounder Kind of package: reel; tape Mounting: SMD Number of channels: 1 Voltage supply range: 2.3...5.5V DC Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PAM8904JPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC Case: UQFN12 Kind of integrated circuit: piezo sounder Kind of package: reel; tape Mounting: SMD Operating temperature: -40...150°C Number of channels: 1 Voltage supply range: 1.8...5.5V DC Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PAM8904QJER | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC Case: UQFN16 Kind of integrated circuit: piezo sounder Kind of package: reel; tape Mounting: SMD Operating temperature: -40...150°C Number of channels: 1 Voltage supply range: 2.3...5V DC Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PAM8907SB10-7 | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC Case: UQFN10 Kind of integrated circuit: piezo sounder Kind of package: reel; tape Mounting: SMD Operating temperature: -40...150°C Number of channels: 1 Voltage supply range: 1.8...5.5V DC Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PAM8908JER | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2 Integrated circuit features: headphone driver; stereo Case: UQFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output power: 25mW Number of channels: 2 Voltage supply range: 2.5...5.5V DC Amplifier class: AB Type of integrated circuit: audio amplifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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HD06-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 30A Electrical mounting: SMT Case: MiniDIP Kind of package: reel; tape |
на замовлення 1854 шт: термін постачання 21-30 дні (днів) |
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AP63300WU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3.8...32V DC Output voltage: 0.8...31V DC Output current: 3A Case: TSOT26 Mounting: SMD Frequency: 0.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 96% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74LVC1G125SE-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Technology: CMOS Mounting: SMD Case: SOT353 Manufacturer series: LVC Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Number of channels: 1 Quiescent current: 200µA Kind of output: 3-state |
на замовлення 2358 шт: термін постачання 21-30 дні (днів) |
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74LVC1G125W5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.65...5.5V DC Quiescent current: 200µA Manufacturer series: LVC |
на замовлення 2570 шт: термін постачання 21-30 дні (днів) |
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BSP75NTA | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223 Output current: 1.3A Mounting: SMD Kind of integrated circuit: low-side Kind of output: N-Channel Kind of package: reel; tape Supply voltage: 0...5.5V DC On-state resistance: 0.55Ω Number of channels: 1 Control voltage: 60V DC Case: SOT223 Type of integrated circuit: power switch |
на замовлення 469 шт: термін постачання 21-30 дні (днів) |
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ZTL431BFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 11878 шт: термін постачання 21-30 дні (днів) |
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BAS40-06-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.35W Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMBJ28A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMP2104LP-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3 Case: DFN1411-3 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.2A On-state resistance: 0.24Ω Power dissipation: 0.5W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape |
на замовлення 1458 шт: термін постачання 21-30 дні (днів) |
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DMP2120U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23 Type of transistor: P-MOSFET Case: SOT23 Mounting: SMD Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -20V Drain current: -3A On-state resistance: 62mΩ Power dissipation: 0.8W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1437 шт: термін постачання 21-30 дні (днів) |
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DMP2130L-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A On-state resistance: 0.125Ω Power dissipation: 1.4W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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DMP2130LDM-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT26 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 0.13Ω Power dissipation: 1.25W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCX54TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 987 шт: термін постачання 21-30 дні (днів) |
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FMMT625TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 150V; 1A; 625mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1A Power dissipation: 0.625W Case: SOT23 Current gain: 15...400 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 135MHz |
на замовлення 1960 шт: термін постачання 21-30 дні (днів) |
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BCX5310TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Mounting: SMD Type of transistor: PNP Case: SOT89 Collector current: 1A Power dissipation: 1W Current gain: 63...160 Collector-emitter voltage: 80V Quantity in set/package: 1000pcs. Frequency: 150MHz Polarisation: bipolar Kind of package: reel; tape |
на замовлення 2514 шт: термін постачання 21-30 дні (днів) |
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BCX5316TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 631 шт: термін постачання 21-30 дні (днів) |
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BCX53TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 1730 шт: термін постачання 21-30 дні (днів) |
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BCX53TC | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 25...250 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PAM8016AKR | DIODES INCORPORATED |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: haptic motor controller Interface: PWM Case: U-FLGA1515-9 Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA) Mounting: SMD Operating temperature: -25...85°C Application: haptic motors; linear actuator; servos Operating voltage: 2.8...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PAM8302AADCR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Operating temperature: -40...85°C Output power: 2.5W Voltage supply range: 2...5.5V DC Kind of package: reel; tape Amplifier class: D Integrated circuit features: low noise; thermal protection Case: SO8 Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 |
на замовлення 1310 шт: термін постачання 21-30 дні (днів) |
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BSS123-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.3W On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 6083 шт: термін постачання 21-30 дні (днів) |
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BSS123Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSS123Q-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.3W On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 100V Application: automotive industry Polarisation: unipolar Kind of channel: enhancement |
на замовлення 3310 шт: термін постачання 21-30 дні (днів) |
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BSS123TA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.3W On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 2891 шт: термін постачання 21-30 дні (днів) |
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BSS123W-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.2W On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 670 шт: термін постачання 21-30 дні (днів) |
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BSS123WQ-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.2W On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 100V Application: automotive industry Polarisation: unipolar Kind of channel: enhancement |
на замовлення 434 шт: термін постачання 21-30 дні (днів) |
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DMP2225LQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.225Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PAM8304ASR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1 Operating temperature: -40...85°C Output power: 3W Voltage supply range: 2.8...6V DC Kind of package: reel; tape Amplifier class: D Integrated circuit features: low noise; thermal protection Case: MSOP8 Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMAJ12CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 3517 шт: термін постачання 21-30 дні (днів) |
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74LVC1G07SE-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Technology: CMOS Mounting: SMD Case: SOT353 Manufacturer series: LVC Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Number of channels: 1 Quiescent current: 200µA Kind of output: open drain |
на замовлення 390 шт: термін постачання 21-30 дні (днів) |
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ZXM61N03FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.1A; 0.625W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.1A Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3852 шт: термін постачання 21-30 дні (днів) |
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| DMT6005LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMT6006LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMT6006LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMT6006SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMT6007LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMT6007LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
на замовлення 1851 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.57 грн |
| 8+ | 50.95 грн |
| 10+ | 47.39 грн |
| 50+ | 40.35 грн |
| DMT6007LFGQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMT6007LFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMT6008LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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В кошику
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| DMT6008LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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| SMBJ30A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.87 грн |
| 26+ | 15.77 грн |
| 100+ | 8.57 грн |
| 500+ | 6.39 грн |
| 1000+ | 5.82 грн |
| 3000+ | 5.26 грн |
| AP2112K-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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| AP2112K-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Case: SOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Integrated circuit features: shutdown mode control input
Operating temperature: -40...85°C
Output current: 0.6A
Voltage drop: 0.4V
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 2.5V
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Case: SOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Integrated circuit features: shutdown mode control input
Operating temperature: -40...85°C
Output current: 0.6A
Voltage drop: 0.4V
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 2.5V
Input voltage: 2.5...6V
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.93 грн |
| 39+ | 10.51 грн |
| 44+ | 9.30 грн |
| 52+ | 7.93 грн |
| 100+ | 6.47 грн |
| 250+ | 5.90 грн |
| 500+ | 5.74 грн |
| SMAJ58A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 444 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.42 грн |
| 31+ | 13.26 грн |
| 36+ | 11.24 грн |
| 57+ | 7.13 грн |
| 100+ | 5.98 грн |
| 250+ | 4.98 грн |
| DMC3021LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 2506 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.25 грн |
| 12+ | 35.42 грн |
| 25+ | 28.95 грн |
| 50+ | 24.58 грн |
| 100+ | 21.11 грн |
| 500+ | 15.12 грн |
| 1000+ | 13.67 грн |
| SMAJ6.5A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.42 грн |
| 31+ | 13.26 грн |
| 36+ | 11.24 грн |
| 47+ | 8.73 грн |
| 100+ | 4.29 грн |
| BSS127S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 2386 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.74 грн |
| 20+ | 21.03 грн |
| 23+ | 18.03 грн |
| 50+ | 11.56 грн |
| 100+ | 9.62 грн |
| 500+ | 6.63 грн |
| 1000+ | 5.82 грн |
| 1500+ | 5.50 грн |
| SMBJ58A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2415 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 43+ | 9.54 грн |
| 48+ | 8.49 грн |
| 58+ | 7.04 грн |
| 100+ | 6.31 грн |
| 74HCT125S14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
Manufacturer series: HCT
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
Manufacturer series: HCT
Quiescent current: 40µA
на замовлення 1369 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 12.71 грн |
| 50+ | 8.09 грн |
| 100+ | 7.12 грн |
| 500+ | 6.39 грн |
| TL431ASA-7 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 2892 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 35+ | 11.64 грн |
| 40+ | 10.19 грн |
| 47+ | 8.65 грн |
| 100+ | 7.04 грн |
| 250+ | 6.39 грн |
| 500+ | 6.07 грн |
| 1000+ | 5.74 грн |
| PAM8902HKER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Type of integrated circuit: audio amplifier
товару немає в наявності
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од. на суму грн.
| PAM8904EGPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC
Case: WQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC
Case: WQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
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од. на суму грн.
| PAM8904EJER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
товару немає в наявності
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од. на суму грн.
| PAM8904EJPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
товару немає в наявності
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од. на суму грн.
| PAM8904JER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Number of channels: 1
Voltage supply range: 2.3...5.5V DC
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Number of channels: 1
Voltage supply range: 2.3...5.5V DC
Type of integrated circuit: driver
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од. на суму грн.
| PAM8904JPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC
Case: UQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
товару немає в наявності
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од. на суму грн.
| PAM8904QJER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 2.3...5V DC
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 2.3...5V DC
Type of integrated circuit: driver
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од. на суму грн.
| PAM8907SB10-7 |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC
Case: UQFN10
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC
Case: UQFN10
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
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од. на суму грн.
| PAM8908JER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Integrated circuit features: headphone driver; stereo
Case: UQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output power: 25mW
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Amplifier class: AB
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Integrated circuit features: headphone driver; stereo
Case: UQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output power: 25mW
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Amplifier class: AB
Type of integrated circuit: audio amplifier
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од. на суму грн.
| HD06-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
на замовлення 1854 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.32 грн |
| 18+ | 23.61 грн |
| 100+ | 13.75 грн |
| 500+ | 9.95 грн |
| 1000+ | 8.90 грн |
| AP63300WU-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
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од. на суму грн.
| 74LVC1G125SE-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
на замовлення 2358 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.71 грн |
| 79+ | 5.18 грн |
| 90+ | 4.53 грн |
| 104+ | 3.91 грн |
| 124+ | 3.28 грн |
| 250+ | 2.98 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.76 грн |
| 74LVC1G125W5-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
на замовлення 2570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.32 грн |
| 49+ | 8.41 грн |
| 55+ | 7.44 грн |
| 65+ | 6.31 грн |
| 100+ | 5.09 грн |
| 250+ | 4.61 грн |
| 500+ | 4.37 грн |
| 1000+ | 4.21 грн |
| BSP75NTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Output current: 1.3A
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
On-state resistance: 0.55Ω
Number of channels: 1
Control voltage: 60V DC
Case: SOT223
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Output current: 1.3A
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
On-state resistance: 0.55Ω
Number of channels: 1
Control voltage: 60V DC
Case: SOT223
Type of integrated circuit: power switch
на замовлення 469 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.28 грн |
| 10+ | 42.21 грн |
| 15+ | 40.03 грн |
| 25+ | 37.28 грн |
| 50+ | 33.48 грн |
| 100+ | 30.00 грн |
| 250+ | 27.98 грн |
| ZTL431BFTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 11878 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.51 грн |
| 25+ | 19.00 грн |
| 100+ | 14.56 грн |
| 250+ | 11.16 грн |
| 500+ | 9.78 грн |
| BAS40-06-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
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| SMBJ28A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DMP2104LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Case: DFN1411-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
On-state resistance: 0.24Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Case: DFN1411-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
On-state resistance: 0.24Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
на замовлення 1458 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.61 грн |
| 18+ | 22.48 грн |
| 26+ | 16.01 грн |
| 100+ | 12.05 грн |
| DMP2120U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1437 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.16 грн |
| 28+ | 14.56 грн |
| 34+ | 12.21 грн |
| 59+ | 6.97 грн |
| 75+ | 6.05 грн |
| 100+ | 5.52 грн |
| 200+ | 4.59 грн |
| 500+ | 3.89 грн |
| 1000+ | 3.74 грн |
| DMP2130L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.22 грн |
| 17+ | 24.26 грн |
| 20+ | 20.94 грн |
| 100+ | 11.89 грн |
| 500+ | 8.90 грн |
| 1000+ | 8.17 грн |
| DMP2130LDM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT26
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.13Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT26
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.13Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
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| BCX54TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 987 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.87 грн |
| 22+ | 18.76 грн |
| 50+ | 12.86 грн |
| 100+ | 10.84 грн |
| 500+ | 7.52 грн |
| FMMT625TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.625W
Case: SOT23
Current gain: 15...400
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 135MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.625W
Case: SOT23
Current gain: 15...400
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 135MHz
на замовлення 1960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.99 грн |
| 13+ | 31.13 грн |
| 100+ | 18.68 грн |
| 500+ | 14.07 грн |
| 1000+ | 12.78 грн |
| BCX5310TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Mounting: SMD
Type of transistor: PNP
Case: SOT89
Collector current: 1A
Power dissipation: 1W
Current gain: 63...160
Collector-emitter voltage: 80V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Mounting: SMD
Type of transistor: PNP
Case: SOT89
Collector current: 1A
Power dissipation: 1W
Current gain: 63...160
Collector-emitter voltage: 80V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Kind of package: reel; tape
на замовлення 2514 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 22+ | 18.60 грн |
| 25+ | 16.50 грн |
| 100+ | 9.30 грн |
| 500+ | 6.23 грн |
| 1000+ | 5.42 грн |
| 2000+ | 4.77 грн |
| BCX5316TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 631 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.51 грн |
| 27+ | 15.20 грн |
| 50+ | 10.11 грн |
| 100+ | 8.47 грн |
| 250+ | 6.83 грн |
| 500+ | 5.84 грн |
| BCX53TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 1730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 27+ | 15.28 грн |
| 33+ | 12.37 грн |
| 100+ | 8.90 грн |
| 500+ | 6.23 грн |
| 1000+ | 5.50 грн |
| BCX53TC |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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| PAM8016AKR |
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Виробник: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: haptic motor controller
Interface: PWM
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Mounting: SMD
Operating temperature: -25...85°C
Application: haptic motors; linear actuator; servos
Operating voltage: 2.8...5.5V DC
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: haptic motor controller
Interface: PWM
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Mounting: SMD
Operating temperature: -25...85°C
Application: haptic motors; linear actuator; servos
Operating voltage: 2.8...5.5V DC
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| PAM8302AADCR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Output power: 2.5W
Voltage supply range: 2...5.5V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: SO8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Output power: 2.5W
Voltage supply range: 2...5.5V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: SO8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
на замовлення 1310 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.48 грн |
| 21+ | 19.97 грн |
| 25+ | 17.87 грн |
| 100+ | 16.25 грн |
| BSS123-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 6083 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 36+ | 11.32 грн |
| 42+ | 9.78 грн |
| 59+ | 6.87 грн |
| 100+ | 5.85 грн |
| 500+ | 3.99 грн |
| 1000+ | 3.38 грн |
| 3000+ | 2.58 грн |
| 6000+ | 2.17 грн |
| BSS123Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
| BSS123Q-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 3310 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 8.01 грн |
| 120+ | 3.37 грн |
| 140+ | 3.02 грн |
| 500+ | 2.68 грн |
| 3000+ | 2.40 грн |
| BSS123TA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.3W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 2891 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 23+ | 17.79 грн |
| 26+ | 15.69 грн |
| 50+ | 11.00 грн |
| 100+ | 9.46 грн |
| 500+ | 6.87 грн |
| 1000+ | 6.15 грн |
| BSS123W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 34+ | 12.13 грн |
| 52+ | 7.93 грн |
| 100+ | 6.70 грн |
| 500+ | 4.85 грн |
| BSS123WQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 434 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.42 грн |
| 33+ | 12.62 грн |
| 40+ | 10.27 грн |
| 75+ | 5.43 грн |
| 100+ | 4.24 грн |
| DMP2225LQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.225Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.225Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PAM8304ASR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...6V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: MSOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...6V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: MSOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ12CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 3517 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 47+ | 8.73 грн |
| 55+ | 7.44 грн |
| 68+ | 5.95 грн |
| 81+ | 5.01 грн |
| 100+ | 4.37 грн |
| 250+ | 3.72 грн |
| 1000+ | 3.16 грн |
| 74LVC1G07SE-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: open drain
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Case: SOT353
Manufacturer series: LVC
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Quiescent current: 200µA
Kind of output: open drain
на замовлення 390 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.84 грн |
| 87+ | 4.69 грн |
| 97+ | 4.21 грн |
| 111+ | 3.66 грн |
| 133+ | 3.06 грн |
| 250+ | 2.79 грн |
| ZXM61N03FTA | ![]() |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.1A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.1A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3852 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.06 грн |
| 44+ | 9.22 грн |
| 100+ | 8.25 грн |
| 500+ | 8.17 грн |




















