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AP2112K-1.8TRG1 AP2112K-1.8TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
на замовлення 4855 шт:
термін постачання 21-30 дні (днів)
32+14.23 грн
38+11.07 грн
44+9.50 грн
50+8.26 грн
100+6.69 грн
250+6.11 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
KBP201G KBP201G DIODES INCORPORATED KBP2005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 65A; flat
Version: flat
Case: KBP
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Load current: 2A
Max. forward impulse current: 65A
Max. off-state voltage: 100V
Features of semiconductor devices: glass passivated
на замовлення 347 шт:
термін постачання 21-30 дні (днів)
10+46.25 грн
15+27.75 грн
35+21.72 грн
105+17.92 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
KBP204G KBP204G DIODES INCORPORATED KBP2005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 65A; flat
Version: flat
Case: KBP
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Load current: 2A
Max. forward impulse current: 65A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
12+39.13 грн
16+26.18 грн
35+21.23 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
KBP208G KBP208G DIODES INCORPORATED KBP2005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 65A; flat
Version: flat
Case: KBP
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Load current: 2A
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
8+56.03 грн
18+24.28 грн
25+22.30 грн
35+21.72 грн
105+19.49 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
AP2125N-3.3TRG1 AP2125N-3.3TRG1 DIODES INCORPORATED AP2125.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.36V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2125
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...6V
на замовлення 1459 шт:
термін постачання 21-30 дні (днів)
46+9.78 грн
57+7.27 грн
66+6.28 грн
100+5.04 грн
250+4.79 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
AP7361C-33SP-13 AP7361C-33SP-13 DIODES INCORPORATED AP7361C.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1A
Voltage drop: 0.7V
Output voltage: 3.3V
Input voltage: 2.2...6V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Integrated circuit features: shutdown mode control input
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SMBJ170A-13-F SMBJ170A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷217.5V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AP64502SP-13 DIODES INCORPORATED AP64502.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 5A
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 100kHz...2.2MHz
Topology: buck
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AL9910SP-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8-EP; Ch: 1; PWM,linear dimming; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 15...500V DC
Efficiency: 90%
Integrated circuit features: linear dimming; PWM
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AP64502QSP-13 DIODES INCORPORATED AP64502Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 5A
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 100kHz...2.2MHz
Application: automotive industry
Topology: buck
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AP64501QSP-13 DIODES INCORPORATED AP64501Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 5A
Output voltage: 0.8...39V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 510...630kHz
Application: automotive industry
Topology: buck
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SD103AWSQ-7-F SD103AWSQ-7-F DIODES INCORPORATED SD103AWS-CWS_Rev18-2_Aug2014.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; 10ns; reel,tape
Mounting: SMD
Capacitance: 35pF
Reverse recovery time: 10ns
Leakage current: 5µA
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 40V
Kind of package: reel; tape
Application: automotive industry
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky switching
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DMP4015SPS-13 DMP4015SPS-13 DIODES INCORPORATED DMP4015SPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Case: PowerDI®5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 15mΩ
Power dissipation: 0.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
на замовлення 2365 шт:
термін постачання 21-30 дні (днів)
7+68.48 грн
10+47.74 грн
100+31.88 грн
500+24.61 грн
1000+22.38 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DXT13003DG-13 DIODES INCORPORATED DXT13003DG.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 1.3A; 3W; SOT223
Type of transistor: NPN
Mounting: SMD
Case: SOT223
Collector current: 1.3A
Power dissipation: 3W
Pulsed collector current: 3A
Current gain: 5...40
Collector-emitter voltage: 450V
Quantity in set/package: 2500pcs.
Frequency: 4MHz
Kind of package: reel; tape
Polarisation: bipolar
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KBP310G DIODES INCORPORATED KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf KBP304G-KBP310G.pdf kbp302g.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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MMBT5551Q-7 DIODES INCORPORATED MMBT5551Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
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MMBT5401Q-7-F DIODES INCORPORATED ds30057.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMBT5401-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Quantity in set/package: 10000pcs.
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DPLS4140E-13 DIODES INCORPORATED ds31279.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1W; SOT223
Mounting: SMD
Power dissipation: 1W
Collector current: 4A
Pulsed collector current: 10A
Current gain: 12...300
Collector-emitter voltage: 140V
Quantity in set/package: 2500pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223
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BC807-40-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
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BC807-40Q-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
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BC807-40Q-7-F BC807-40Q-7-F DIODES INCORPORATED BC807-16_-25_-40.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
28+16.01 грн
40+10.41 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BC807-40W-7 BC807-40W-7 DIODES INCORPORATED BC807-16W_-25W_-40W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
на замовлення 4536 шт:
термін постачання 21-30 дні (днів)
30+15.12 грн
46+9.17 грн
100+5.18 грн
500+3.58 грн
1000+3.11 грн
3000+2.54 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
ULN2004AS16-13 DIODES INCORPORATED ULN200xA.pdf Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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BC848A-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848AW-7-F DIODES INCORPORATED BC846AW-BC848CW.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848B-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMBT2222A-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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MMBT2222ALP4-7B DIODES INCORPORATED MMBT2222ALP4.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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MMBT2222AQ-7-F DIODES INCORPORATED ds30041.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.8A
Quantity in set/package: 3000pcs.
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SMAJ12AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ12ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 20.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BC847CDLP-7 DIODES INCORPORATED ds30817.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 350mW; X2-DFN1310-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: X2-DFN1310-6
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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BC857CQ-7-F DIODES INCORPORATED BC857CQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC817-25Q-7-F DIODES INCORPORATED BC817-16Q_25Q_40Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
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BAV21HWF-7 DIODES INCORPORATED BAV21HWF.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAV21HWFQ-7 DIODES INCORPORATED BAV21HWFQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAV21WQ-7-F DIODES INCORPORATED BAV19W-BAV21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
Application: automotive industry
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BAV21WS-13-F DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
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ES1J-13-F DIODES INCORPORATED ES1J.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: superfast switching
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1SS361LP3-7 DIODES INCORPORATED 1SS361LP3.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape
Type of diode: switching
Case: X3-DFN0603-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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1SS361LPH4-7B DIODES INCORPORATED 1SS361LPH4.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; Ufmax: 1.2V
Type of diode: switching
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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1SS361UDJ-7 DIODES INCORPORATED 1SS361UDJ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape
Type of diode: switching
Case: SOT963
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: double independent
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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MMBT3904FA-7B DIODES INCORPORATED MMBT3904FA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3904FZ-7B DIODES INCORPORATED MMBT3904FZ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3904LP-7B DIODES INCORPORATED ds31835.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3904Q-7-F DIODES INCORPORATED MMBT3904Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMBT3906LP-7B DIODES INCORPORATED MMBT3906LP.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3906-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3906FA-7B DIODES INCORPORATED MMBT3906FA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3906FZ-7B DIODES INCORPORATED MMBT3906FZ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3906LP-7 DIODES INCORPORATED MMBT3906LP.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMBT3906T-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
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SMAJ5.0AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P4SMAJ5.0ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MUR160-T DIODES INCORPORATED ds30112.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
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MCR100-8 DIODES INCORPORATED MCR100-8.pdf description Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 50µA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Features of semiconductor devices: sensitive gate
Load current: 0.25A
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DSS4140U-7 DIODES INCORPORATED ds31689.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 200...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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DSS4140V-7 DIODES INCORPORATED ds31655.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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DSS4160DS-7 DIODES INCORPORATED DSS4160DS.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Case: SOT26
Type of transistor: NPN x2
Power dissipation: 1.7W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...420
Quantity in set/package: 3000pcs.
Frequency: 150...220MHz
Kind of package: reel; tape
Polarisation: bipolar
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AP2112K-1.8TRG1 AP2112.pdf
AP2112K-1.8TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 0.6A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
на замовлення 4855 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+14.23 грн
38+11.07 грн
44+9.50 грн
50+8.26 грн
100+6.69 грн
250+6.11 грн
Мінімальне замовлення: 32
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KBP201G KBP2005G_ser.pdf
KBP201G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 65A; flat
Version: flat
Case: KBP
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Load current: 2A
Max. forward impulse current: 65A
Max. off-state voltage: 100V
Features of semiconductor devices: glass passivated
на замовлення 347 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+46.25 грн
15+27.75 грн
35+21.72 грн
105+17.92 грн
Мінімальне замовлення: 10
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KBP204G KBP2005G_ser.pdf
KBP204G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 65A; flat
Version: flat
Case: KBP
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Load current: 2A
Max. forward impulse current: 65A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+39.13 грн
16+26.18 грн
35+21.23 грн
Мінімальне замовлення: 12
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KBP208G KBP2005G_ser.pdf
KBP208G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 65A; flat
Version: flat
Case: KBP
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Load current: 2A
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.03 грн
18+24.28 грн
25+22.30 грн
35+21.72 грн
105+19.49 грн
Мінімальне замовлення: 8
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AP2125N-3.3TRG1 AP2125.pdf
AP2125N-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.36V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2125
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...6V
на замовлення 1459 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.78 грн
57+7.27 грн
66+6.28 грн
100+5.04 грн
250+4.79 грн
Мінімальне замовлення: 46
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AP7361C-33SP-13 AP7361C.pdf
AP7361C-33SP-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1A
Voltage drop: 0.7V
Output voltage: 3.3V
Input voltage: 2.2...6V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Integrated circuit features: shutdown mode control input
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SMBJ170A-13-F SMBJ_ser.pdf
SMBJ170A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷217.5V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AP64502SP-13 AP64502.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 5A
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 100kHz...2.2MHz
Topology: buck
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AL9910SP-13 AL9910_A.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8-EP; Ch: 1; PWM,linear dimming; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Number of channels: 1
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 15...500V DC
Efficiency: 90%
Integrated circuit features: linear dimming; PWM
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AP64502QSP-13 AP64502Q.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 5A
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 100kHz...2.2MHz
Application: automotive industry
Topology: buck
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AP64501QSP-13 AP64501Q.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 5A
Output voltage: 0.8...39V DC
Input voltage: 3.8...40V DC
Efficiency: 85%
Frequency: 510...630kHz
Application: automotive industry
Topology: buck
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SD103AWSQ-7-F SD103AWS-CWS_Rev18-2_Aug2014.pdf
SD103AWSQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; 10ns; reel,tape
Mounting: SMD
Capacitance: 35pF
Reverse recovery time: 10ns
Leakage current: 5µA
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 40V
Kind of package: reel; tape
Application: automotive industry
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky switching
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DMP4015SPS-13 DMP4015SPS.pdf
DMP4015SPS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Case: PowerDI®5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 15mΩ
Power dissipation: 0.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
на замовлення 2365 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+68.48 грн
10+47.74 грн
100+31.88 грн
500+24.61 грн
1000+22.38 грн
Мінімальне замовлення: 7
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DXT13003DG-13 DXT13003DG.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 1.3A; 3W; SOT223
Type of transistor: NPN
Mounting: SMD
Case: SOT223
Collector current: 1.3A
Power dissipation: 3W
Pulsed collector current: 3A
Current gain: 5...40
Collector-emitter voltage: 450V
Quantity in set/package: 2500pcs.
Frequency: 4MHz
Kind of package: reel; tape
Polarisation: bipolar
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KBP310G KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf KBP304G-KBP310G.pdf kbp302g.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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MMBT5551Q-7 MMBT5551Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
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MMBT5401Q-7-F ds30057.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMBT5401-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Quantity in set/package: 10000pcs.
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DPLS4140E-13 ds31279.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1W; SOT223
Mounting: SMD
Power dissipation: 1W
Collector current: 4A
Pulsed collector current: 10A
Current gain: 12...300
Collector-emitter voltage: 140V
Quantity in set/package: 2500pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223
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BC807-40-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
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BC807-40Q-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 10000pcs.
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BC807-40Q-7-F BC807-16_-25_-40.pdf
BC807-40Q-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+16.01 грн
40+10.41 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BC807-40W-7 BC807-16W_-25W_-40W.pdf
BC807-40W-7
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
на замовлення 4536 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+15.12 грн
46+9.17 грн
100+5.18 грн
500+3.58 грн
1000+3.11 грн
3000+2.54 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
ULN2004AS16-13 ULN200xA.pdf
Виробник: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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BC848A-7-F ds11108.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 110...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848AW-7-F BC846AW-BC848CW.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC848B-7-F ds11108.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMBT2222A-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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MMBT2222ALP4-7B MMBT2222ALP4.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.8A
Quantity in set/package: 10000pcs.
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MMBT2222AQ-7-F ds30041.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.8A
Quantity in set/package: 3000pcs.
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SMAJ12AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ12ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 20.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BC847CDLP-7 ds30817.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 350mW; X2-DFN1310-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: X2-DFN1310-6
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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BC857CQ-7-F BC857CQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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BC817-25Q-7-F BC817-16Q_25Q_40Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
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BAV21HWF-7 BAV21HWF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAV21HWFQ-7 BAV21HWFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAV21WQ-7-F BAV19W-BAV21W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
Application: automotive industry
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BAV21WS-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
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ES1J-13-F ES1J.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: superfast switching
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1SS361LP3-7 1SS361LP3.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X3-DFN0603-2; reel,tape
Type of diode: switching
Case: X3-DFN0603-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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1SS361LPH4-7B 1SS361LPH4.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; X2-DFN1006-2; Ufmax: 1.2V
Type of diode: switching
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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1SS361UDJ-7 1SS361UDJ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOT963; reel,tape
Type of diode: switching
Case: SOT963
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: double independent
Kind of package: reel; tape
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
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MMBT3904FA-7B MMBT3904FA.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3904FZ-7B MMBT3904FZ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3904LP-7B ds31835.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3904Q-7-F MMBT3904Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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MMBT3906LP-7B MMBT3906LP.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3906-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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MMBT3906FA-7B MMBT3906FA.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3906FZ-7B MMBT3906FZ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.5A
Quantity in set/package: 10000pcs.
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MMBT3906LP-7 MMBT3906LP.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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MMBT3906T-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Quantity in set/package: 10000pcs.
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SMAJ5.0AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P4SMAJ5.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MUR160-T ds30112.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
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MCR100-8 description MCR100-8.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT thyristors
Description: Thyristor; 600V; 0.25A; Igt: 50uA; SOT23; SMD; reel,tape; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 50µA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Features of semiconductor devices: sensitive gate
Load current: 0.25A
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DSS4140U-7 ds31689.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 400mW; SOT323
Mounting: SMD
Case: SOT323
Type of transistor: NPN
Power dissipation: 0.4W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 200...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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DSS4140V-7 ds31655.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Case: SOT563
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
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DSS4160DS-7 DSS4160DS.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 1.7W; SOT26
Mounting: SMD
Case: SOT26
Type of transistor: NPN x2
Power dissipation: 1.7W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 100...420
Quantity in set/package: 3000pcs.
Frequency: 150...220MHz
Kind of package: reel; tape
Polarisation: bipolar
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