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B340Q-13-F DIODES INCORPORATED B320Q-B360Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Leakage current: 20mA
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
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DMN1004UFV-7 DMN1004UFV-7 DIODES INCORPORATED DMN1004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Version: ESD
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 5.1mΩ
на замовлення 166 шт:
термін постачання 14-30 дні (днів)
8+62.32 грн
9+48.14 грн
10+42.10 грн
50+29.18 грн
100+24.82 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
SMAJ30CAQ-13-F SMAJ30CAQ-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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AP2120N-2.5TRG1 AP2120N-2.5TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP2120
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Operating temperature: -40...85°C
Output voltage: 2.5V
Number of channels: 1
Tolerance: ±2%
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DMG6968UDM-7 DMG6968UDM-7 DIODES INCORPORATED DMG6968UDM.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Semiconductor structure: common drain
Case: SOT26
On-state resistance: 24mΩ
Power dissipation: 0.85W
Version: ESD
на замовлення 113 шт:
термін постачання 14-30 дні (днів)
9+50.58 грн
11+39.08 грн
13+34.05 грн
100+19.37 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
DMP2035UVT-7 DMP2035UVT-7 DIODES INCORPORATED DMP2035UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2590 шт:
термін постачання 14-30 дні (днів)
11+43.35 грн
13+33.04 грн
15+28.68 грн
100+16.44 грн
500+11.82 грн
1000+10.48 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
DMP2035U-7 DMP2035U-7 DIODES INCORPORATED DMP2035U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMP2035UVTQ-7 DMP2035UVTQ-7 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UFDF-7 DIODES INCORPORATED DMP2035UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFCL-7 DIODES INCORPORATED DMP2035UFCL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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 Мінімальне замовлення: 3000 шт
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DMP2035UFDF-13 DIODES INCORPORATED DMP2035UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 20.5nC
Polarisation: unipolar
Drain current: -6.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Pulsed drain current: -40A
Power dissipation: 1.31W
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DMP2035UQ-7 DMP2035UQ-7 DIODES INCORPORATED DMP2035U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UVT-13 DMP2035UVT-13 DIODES INCORPORATED DMP2035UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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DMP2035UVTQ-13 DMP2035UVTQ-13 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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SMAJ16AQ-13-F SMAJ16AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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BSR43TA BSR43TA DIODES INCORPORATED BSR43.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
12+38.84 грн
19+22.31 грн
100+14.17 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
DXT5551-13 DXT5551-13 DIODES INCORPORATED DXT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 2500pcs.
на замовлення 187 шт:
термін постачання 14-30 дні (днів)
12+39.74 грн
25+17.28 грн
100+13.33 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
B280-13-F B280-13-F DIODES INCORPORATED b270-2100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 80V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 650 шт:
термін постачання 14-30 дні (днів)
50+9.03 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
B280AE-13 B280AE-13 DIODES INCORPORATED B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 2A; reel,tape
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 70pF
Leakage current: 0.4mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
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B280Q-13-F DIODES INCORPORATED B270Q_B2100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 75pF
Leakage current: 2mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
Application: automotive industry
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FZT600BTA FZT600BTA DIODES INCORPORATED FZT600A.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 140V; 2A; 3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of transistor: Darlington
Type of transistor: NPN
Collector current: 2A
Power dissipation: 3W
Pulsed collector current: 4A
Frequency: 150...250MHz
Collector-emitter voltage: 140V
Quantity in set/package: 1000pcs.
Current gain: 5000...100000
Polarisation: bipolar
на замовлення 966 шт:
термін постачання 14-30 дні (днів)
8+61.41 грн
11+38.91 грн
50+32.54 грн
100+30.02 грн
250+26.59 грн
500+23.15 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
ZTX450 ZTX450 DIODES INCORPORATED ZTX450.pdf description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Manufacturer standard package: 4000pcs.
на замовлення 698 шт:
термін постачання 14-30 дні (днів)
6+80.38 грн
10+55.35 грн
50+39.92 грн
100+34.72 грн
200+30.19 грн
500+25.75 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
ZTX450STZ ZTX450STZ DIODES INCORPORATED ZTX450.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Manufacturer standard package: 2000pcs.
на замовлення 544 шт:
термін постачання 14-30 дні (днів)
6+76.77 грн
10+45.96 грн
50+32.54 грн
100+28.35 грн
500+22.06 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FZT689BTA FZT689BTA DIODES INCORPORATED FZT689B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
7+74.96 грн
10+47.22 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
FZT489QTA FZT489QTA DIODES INCORPORATED FZT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Application: automotive industry
Current gain: 20...300
на замовлення 922 шт:
термін постачання 14-30 дні (днів)
10+46.06 грн
100+23.57 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FZT789ATA FZT789ATA DIODES INCORPORATED FZT789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Collector-emitter voltage: 25V
Current gain: 300...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
на замовлення 1013 шт:
термін постачання 14-30 дні (днів)
6+80.38 грн
10+46.63 грн
100+29.60 грн
250+25.49 грн
500+23.15 грн
1000+22.06 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FCX789ATA DIODES INCORPORATED FCX789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FZT489TA DIODES INCORPORATED FZT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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FZT589TA DIODES INCORPORATED FZT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FZT789AQTA DIODES INCORPORATED FZT789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 3A
Pulsed collector current: 6A
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FCX589TA DIODES INCORPORATED FCX589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FMMT589TA FMMT589TA DIODES INCORPORATED FMMT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
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FMMT489TA DIODES INCORPORATED FMMT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
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DMN4031SSD-13 DMN4031SSD-13 DIODES INCORPORATED DMN4031SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN4031SSDQ-13 DMN4031SSDQ-13 DIODES INCORPORATED DMN4031SSDQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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AP66300FVBW-13 DIODES INCORPORATED AP66300.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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AP66300QFVBW-13 DIODES INCORPORATED AP66300Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
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 Мінімальне замовлення: 3000 шт
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SMAJ48CAQ-13-F SMAJ48CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ64A-13-F SMCJ64A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ64AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+20.95 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PDS1045-13 DIODES INCORPORATED ds30539.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 150mA
Max. forward impulse current: 275A
Kind of package: reel; tape
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DMN30H4D0L-7 DMN30H4D0L-7 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-7 DIODES INCORPORATED DMN30H4D0LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
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DMN30H14DLY-13 DIODES INCORPORATED DMN30H14DLY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
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 Мінімальне замовлення: 2500 шт
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DMN30H4D0L-13 DMN30H4D0L-13 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-13 DIODES INCORPORATED DMN30H4D0LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
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DMN30H4D1S-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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DMN30H4D1S-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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 Мінімальне замовлення: 5 шт
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B350B-13-F DIODES INCORPORATED B320B-B360B_Rev10-2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Kind of package: reel; tape
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74LVC573AQ20-13 DIODES INCORPORATED 74LVC573A.pdf Category: Latches
Description: IC: digital; 8bit,buffer; AND; Ch: 10; IN: 8; CMOS; 1.65÷3.6VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 10
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Number of inputs: 8
Kind of gate: AND
Technology: CMOS
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74LVC573AT20-13 74LVC573AT20-13 DIODES INCORPORATED 74LVC573A.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
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SMBJ40CA-13-F SMBJ40CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 638 шт:
термін постачання 14-30 дні (днів)
42+10.84 грн
53+8.05 грн
58+7.30 грн
63+6.71 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
SMBJ45CA-13-F SMBJ45CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1794 шт:
термін постачання 14-30 дні (днів)
28+16.26 грн
38+11.24 грн
43+9.98 грн
100+7.13 грн
500+5.95 грн
1000+5.54 грн
Мінімальне замовлення: 28 шт
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SMBJ43CA-13-F SMBJ43CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 955 шт:
термін постачання 14-30 дні (днів)
20+22.58 грн
25+16.94 грн
29+14.76 грн
100+9.31 грн
500+7.13 грн
Мінімальне замовлення: 20 шт
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SMBJ48CA-13-F SMBJ48CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ43A-13-F SMBJ43A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMN10H220LVT-7 DMN10H220LVT-7 DIODES INCORPORATED DMN10H220LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LQ-7 DMN10H220LQ-7 DIODES INCORPORATED DMN10H220LQ-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN10H220L-13 DMN10H220L-13 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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 Мінімальне замовлення: 10000 шт
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DMN10H220LE-13 DMN10H220LE-13 DIODES INCORPORATED DMN10H220LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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B340Q-13-F B320Q-B360Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Leakage current: 20mA
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
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DMN1004UFV-7 DMN1004UFV.pdf
DMN1004UFV-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Version: ESD
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 5.1mΩ
на замовлення 166 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+62.32 грн
9+48.14 грн
10+42.10 грн
50+29.18 грн
100+24.82 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
SMAJ30CAQ-13-F SMAJ_ser.pdf
SMAJ30CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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AP2120N-2.5TRG1 AP2120.pdf
AP2120N-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP2120
Input voltage: 2...6V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Operating temperature: -40...85°C
Output voltage: 2.5V
Number of channels: 1
Tolerance: ±2%
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DMG6968UDM-7 DMG6968UDM.pdf
DMG6968UDM-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Semiconductor structure: common drain
Case: SOT26
On-state resistance: 24mΩ
Power dissipation: 0.85W
Version: ESD
на замовлення 113 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+50.58 грн
11+39.08 грн
13+34.05 грн
100+19.37 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
DMP2035UVT-7 DMP2035UVT.pdf
DMP2035UVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2590 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
11+43.35 грн
13+33.04 грн
15+28.68 грн
100+16.44 грн
500+11.82 грн
1000+10.48 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
DMP2035U-7 DMP2035U.pdf
DMP2035U-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMP2035UVTQ-7 DMP2035UVTQ.pdf
DMP2035UVTQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UFDF-7 DMP2035UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFCL-7 DMP2035UFCL.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMP2035UFDF-13 DMP2035UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 20.5nC
Polarisation: unipolar
Drain current: -6.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Pulsed drain current: -40A
Power dissipation: 1.31W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMP2035UQ-7 DMP2035U.pdf
DMP2035UQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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В кошику  од. на суму  грн.
DMP2035UVT-13 DMP2035UVT.pdf
DMP2035UVT-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMP2035UVTQ-13 DMP2035UVTQ.pdf
DMP2035UVTQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
SMAJ16AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ16AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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BSR43TA BSR43.pdf
BSR43TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+38.84 грн
19+22.31 грн
100+14.17 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
DXT5551-13 DXT5551.pdf
DXT5551-13
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 2500pcs.
на замовлення 187 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+39.74 грн
25+17.28 грн
100+13.33 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
B280-13-F b270-2100.pdf
B280-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 80V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 650 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+9.03 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
B280AE-13 B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf
B280AE-13
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 2A; reel,tape
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 70pF
Leakage current: 0.4mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
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B280Q-13-F B270Q_B2100Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 75pF
Leakage current: 2mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
Application: automotive industry
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FZT600BTA FZT600A.pdf
FZT600BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 140V; 2A; 3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of transistor: Darlington
Type of transistor: NPN
Collector current: 2A
Power dissipation: 3W
Pulsed collector current: 4A
Frequency: 150...250MHz
Collector-emitter voltage: 140V
Quantity in set/package: 1000pcs.
Current gain: 5000...100000
Polarisation: bipolar
на замовлення 966 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+61.41 грн
11+38.91 грн
50+32.54 грн
100+30.02 грн
250+26.59 грн
500+23.15 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
ZTX450 description ZTX450.pdf
ZTX450
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Manufacturer standard package: 4000pcs.
на замовлення 698 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+80.38 грн
10+55.35 грн
50+39.92 грн
100+34.72 грн
200+30.19 грн
500+25.75 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
ZTX450STZ ZTX450.pdf
ZTX450STZ
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Manufacturer standard package: 2000pcs.
на замовлення 544 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+76.77 грн
10+45.96 грн
50+32.54 грн
100+28.35 грн
500+22.06 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FZT689BTA FZT689B.pdf
FZT689BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+74.96 грн
10+47.22 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
FZT489QTA FZT489.pdf
FZT489QTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Application: automotive industry
Current gain: 20...300
на замовлення 922 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+46.06 грн
100+23.57 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FZT789ATA FZT789A.pdf
FZT789ATA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Collector-emitter voltage: 25V
Current gain: 300...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
на замовлення 1013 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+80.38 грн
10+46.63 грн
100+29.60 грн
250+25.49 грн
500+23.15 грн
1000+22.06 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FCX789ATA FCX789A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FZT489TA FZT489.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
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FZT589TA FZT589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FZT789AQTA FZT789A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 3A
Pulsed collector current: 6A
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FCX589TA FCX589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FMMT589TA FMMT589.pdf
FMMT589TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
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FMMT489TA FMMT489.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
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DMN4031SSD-13 DMN4031SSD.pdf
DMN4031SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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В кошику  од. на суму  грн.
DMN4031SSDQ-13 DMN4031SSDQ.pdf
DMN4031SSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
товару немає в наявності
В кошику  од. на суму  грн.
AP66300FVBW-13 AP66300.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
AP66300QFVBW-13 AP66300Q.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SMAJ48CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ48CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 5000 шт
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SMCJ64A-13-F SMCJ_ser.pdf
SMCJ64A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ64AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3000+20.95 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PDS1045-13 ds30539.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 150mA
Max. forward impulse current: 275A
Kind of package: reel; tape
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Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
DMN30H4D0L-7 DMN30H4D0L.pdf
DMN30H4D0L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-7 DMN30H4D0LFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
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DMN30H14DLY-13 DMN30H14DLY.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DMN30H4D0L-13 DMN30H4D0L.pdf
DMN30H4D0L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMN30H4D0LFDE-13 DMN30H4D0LFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMN30H4D1S-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMN30H4D1S-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
B350B-13-F B320B-B360B_Rev10-2.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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74LVC573AQ20-13 74LVC573A.pdf
Виробник: DIODES INCORPORATED
Category: Latches
Description: IC: digital; 8bit,buffer; AND; Ch: 10; IN: 8; CMOS; 1.65÷3.6VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 10
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Number of inputs: 8
Kind of gate: AND
Technology: CMOS
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Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
74LVC573AT20-13 74LVC573A.pdf
74LVC573AT20-13
Виробник: DIODES INCORPORATED
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
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SMBJ40CA-13-F SMBJ_ser.pdf
SMBJ40CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 638 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
42+10.84 грн
53+8.05 грн
58+7.30 грн
63+6.71 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
SMBJ45CA-13-F SMBJ_ser.pdf
SMBJ45CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1794 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
28+16.26 грн
38+11.24 грн
43+9.98 грн
100+7.13 грн
500+5.95 грн
1000+5.54 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMBJ43CA-13-F SMBJ_ser.pdf
SMBJ43CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 955 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.58 грн
25+16.94 грн
29+14.76 грн
100+9.31 грн
500+7.13 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SMBJ48CA-13-F SMBJ_ser.pdf
SMBJ48CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ43A-13-F SMBJ_ser.pdf
SMBJ43A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMN10H220LVT-7 DMN10H220LVT.pdf
DMN10H220LVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LQ-7 DMN10H220LQ-7.pdf
DMN10H220LQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMN10H220LE-13 DMN10H220LE.pdf
DMN10H220LE-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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