Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72708) > Сторінка 1189 з 1212
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAW56T-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 75mA Reverse recovery time: 4ns Semiconductor structure: common anode; double Capacitance: 1.5pF Case: SOT523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A Features of semiconductor devices: small signal |
на замовлення 684 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() +1 |
BAW56W-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT323 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A Features of semiconductor devices: small signal |
на замовлення 2798 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
BAS16LP-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DFN2 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
AL5801W6-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Output current: 0.35A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 5...100V DC Integrated circuit features: PWM |
на замовлення 769 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
BC846BW-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
на замовлення 1498 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
LM2903QS-13 | DIODES INCORPORATED |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA Input offset current: 200nA Input offset voltage: 15mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 Kind of output: open collector Type of integrated circuit: comparator Case: SO8 Kind of comparator: universal Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C |
на замовлення 2292 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
BAT54AW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMT6009LCT | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3 Case: TO220-3 Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 14.5mΩ Power dissipation: 2.2W Drain current: 29.8A Gate-source voltage: ±16V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6009LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 11.7mΩ Power dissipation: 2.08W Drain current: 9A Gate-source voltage: ±16V Pulsed drain current: 90A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6009LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12.8mΩ Power dissipation: 2.6W Drain current: 10.6A Gate-source voltage: ±16V Pulsed drain current: 90A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6009LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12mΩ Power dissipation: 2.3W Drain current: 9.1A Gate-source voltage: ±16V Pulsed drain current: 160A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
DMT6009LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 33.5nC On-state resistance: 12mΩ Power dissipation: 1.6W Drain current: 11.5A Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMT6010LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 25A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6010LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT6010LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 12mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 125A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
DMT6011LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 22.2nC On-state resistance: 14.5mΩ Power dissipation: 2.1W Drain current: 8.5A Gate-source voltage: ±20V Pulsed drain current: 85A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DMT6012LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 22.2nC On-state resistance: 14mΩ Power dissipation: 1.84W Drain current: 8.4A Gate-source voltage: ±20V Pulsed drain current: 65A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BC847CQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BC847CT-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BC847CW-13-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BC847CW-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
на замовлення 5543 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
BAT54SW-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() +1 |
BAT54SW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series Max. forward voltage: 1V Kind of package: reel; tape Max. forward impulse current: 0.6A |
на замовлення 5889 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
BAT54SWQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Application: automotive industry |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
BC847BT-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 8548 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
BAV99Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
BAV99T-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.155A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT523 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 2538 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
SMBJ12CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1204 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
HD01-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 0.8A Max. forward impulse current: 30A Case: MiniDIP Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 1869 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
BAT54AWQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
ZTL431AQFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A Application: automotive industry |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
LMV358M8G-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; Uoper: 2.7÷5.5V; MSOP8; 10dB Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Operating voltage: 2.7...5.5V Mounting: SMT Case: MSOP8 Operating temperature: -40...125°C Slew rate: 1V/μs Open-loop gain: 10dB Integrated circuit features: rail-to-rail output Input offset voltage: 7mV Kind of package: reel; tape |
на замовлення 2295 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
ZTL432AFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 1542 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| DMT3020LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3020LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 7 inch reel; tape Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3020LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Application: automotive industry Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3020LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 1.1W Drain current: 5.4A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 13 inch reel; tape Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3020LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 1.1W Drain current: 5.4A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 7 inch reel; tape Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3020LFDFQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 0.4W Drain current: 6.7A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 13 inch reel; tape Application: automotive industry Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT3020LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 28mΩ Power dissipation: 1.1W Drain current: 5.4A Drain-source voltage: 30V Pulsed drain current: 40A Kind of package: 7 inch reel; tape Application: automotive industry Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
DMT3020LSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.5W Drain current: 13A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Application: automotive industry Case: SO8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMT3020UFDB-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±12V Gate charge: 8.8nC On-state resistance: 30mΩ Power dissipation: 1.3W Drain current: 5.2A Drain-source voltage: 30V Pulsed drain current: 35A Kind of package: 13 inch reel; tape Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET x2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT30M9LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 160.5nC On-state resistance: 1.6mΩ Power dissipation: 2.6W Drain current: 100A Drain-source voltage: 30V Pulsed drain current: 400A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BC857BT-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 6165 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
BC857BW-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel Frequency: 200MHz Quantity in set/package: 3000pcs. |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
ADTC114EUAQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 30 Quantity in set/package: 3000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DDTC114EUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Power dissipation: 0.2W Quantity in set/package: 3000pcs. Frequency: 250MHz |
на замовлення 4739 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
DMMT3904W-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Kind of package: reel; tape Quantity in set/package: 3000pcs. Type of transistor: NPN x2 Case: SOT363 Collector current: 0.2A Power dissipation: 0.2W Current gain: 30...300 Collector-emitter voltage: 40V Frequency: 300MHz Polarisation: bipolar Mounting: SMD |
на замовлення 2949 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
DMP4015SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252 Case: TO252 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A On-state resistance: 15mΩ Power dissipation: 3.5W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Application: automotive industry |
на замовлення 2140 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
DMP4015SSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.8A On-state resistance: 15mΩ Power dissipation: 1.45W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Application: automotive industry |
на замовлення 2037 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
74LVC1G17SE-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT353 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 200µA Kind of input: with Schmitt trigger Kind of output: push-pull Manufacturer series: LVC |
на замовлення 924 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
74LVC1G17W5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 200µA Kind of input: with Schmitt trigger Kind of output: push-pull Manufacturer series: LVC |
на замовлення 2426 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
PAM2863ECR | DIODES INCORPORATED |
Category: LED driversDescription: Driver; DC/DC converter,LED driver; 2A; SOP8; SMD; Ch: 1; reel,tape Case: SOP8 Mounting: SMD Kind of package: reel; tape Output current: 2A Number of channels: 1 Operating voltage: 4.5...40V DC Kind of integrated circuit: DC/DC converter; LED driver Type of integrated circuit: driver |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
SBR10U300CT | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SBR®; THT; 300V; 10A; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.92V Max. forward impulse current: 150A Technology: SBR® Kind of package: tube |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
SBR40U300CT | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SBR®; THT; 300V; 20Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 300V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.89V Max. forward impulse current: 235A Technology: SBR® Kind of package: tube |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
AP2202K-3.3TRE1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 3.3V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: AP2202 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.5...13.2V Integrated circuit features: shutdown mode control input |
на замовлення 2390 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
74HC594S16-13 | DIODES INCORPORATED |
Category: Shift registersDescription: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Mounting: SMD Case: SO16 Family: HC Number of channels: 4 Supply voltage: 2...6V DC Technology: CMOS Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Operating temperature: -40...150°C |
на замовлення 2156 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| 74HC594T16-13 | DIODES INCORPORATED |
Category: Shift registersDescription: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Mounting: SMD Case: TSSOP16 Family: HC Number of channels: 4 Supply voltage: 2...6V DC Technology: CMOS Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
LM2904QS-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 2mV Kind of package: reel; tape Open-loop gain: 100dB |
на замовлення 2817 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
LM2904S-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 2mV Kind of package: reel; tape Open-loop gain: 100dB |
на замовлення 647 шт: термін постачання 21-30 дні (днів) |
|
| BAW56T-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 684 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.79 грн |
| 36+ | 11.56 грн |
| 100+ | 5.48 грн |
| 500+ | 3.58 грн |
| BAW56W-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
на замовлення 2798 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.12 грн |
| 79+ | 5.29 грн |
| 93+ | 4.46 грн |
| 143+ | 2.91 грн |
| 500+ | 2.01 грн |
| 1000+ | 1.77 грн |
| BAS16LP-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.00 грн |
| AL5801W6-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...100V DC
Integrated circuit features: PWM
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...100V DC
Integrated circuit features: PWM
на замовлення 769 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.46 грн |
| 23+ | 18.66 грн |
| 25+ | 17.10 грн |
| 100+ | 16.19 грн |
| BC846BW-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
на замовлення 1498 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.00 грн |
| 63+ | 6.61 грн |
| 100+ | 4.34 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.34 грн |
| LM2903QS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Kind of output: open collector
Type of integrated circuit: comparator
Case: SO8
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Kind of output: open collector
Type of integrated circuit: comparator
Case: SO8
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
на замовлення 2292 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.67 грн |
| 58+ | 7.19 грн |
| 59+ | 7.02 грн |
| BAT54AW-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику
од. на суму грн.
| DMT6009LCT |
![]() |
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 14.5mΩ
Power dissipation: 2.2W
Drain current: 29.8A
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMT6009LFG-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 11.7mΩ
Power dissipation: 2.08W
Drain current: 9A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMT6009LK3-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12.8mΩ
Power dissipation: 2.6W
Drain current: 10.6A
Gate-source voltage: ±16V
Pulsed drain current: 90A
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMT6009LPS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 2.3W
Drain current: 9.1A
Gate-source voltage: ±16V
Pulsed drain current: 160A
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMT6009LSS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 33.5nC
On-state resistance: 12mΩ
Power dissipation: 1.6W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMT6010LFG-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMT6010LFG-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMT6010LPS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 12mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 125A
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMT6011LSS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Drain current: 8.5A
Gate-source voltage: ±20V
Pulsed drain current: 85A
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMT6012LSS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 14mΩ
Power dissipation: 1.84W
Drain current: 8.4A
Gate-source voltage: ±20V
Pulsed drain current: 65A
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BC847CQ-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| BC847CT-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| BC847CW-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| BC847CW-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
на замовлення 5543 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.34 грн |
| BAT54SW-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику
од. на суму грн.
| BAT54SW-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
на замовлення 5889 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.34 грн |
| 49+ | 8.51 грн |
| 100+ | 4.24 грн |
| 500+ | 2.64 грн |
| 1000+ | 2.21 грн |
| 3000+ | 1.78 грн |
| BAT54SWQ-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.78 грн |
| 57+ | 7.27 грн |
| 72+ | 5.76 грн |
| BC847BT-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 8548 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.78 грн |
| 72+ | 5.78 грн |
| 104+ | 3.98 грн |
| 125+ | 3.31 грн |
| 500+ | 1.94 грн |
| 1000+ | 1.43 грн |
| BAV99Q-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 24 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| BAV99T-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2538 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.67 грн |
| 53+ | 7.93 грн |
| 57+ | 7.27 грн |
| 100+ | 5.30 грн |
| 500+ | 3.97 грн |
| 1000+ | 3.42 грн |
| SMBJ12CA-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1204 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.12 грн |
| 24+ | 17.34 грн |
| 28+ | 15.20 грн |
| 100+ | 9.33 грн |
| 500+ | 6.77 грн |
| 1000+ | 5.86 грн |
| HD01-T |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1869 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.58 грн |
| 16+ | 27.09 грн |
| 18+ | 23.46 грн |
| 100+ | 12.88 грн |
| 500+ | 8.92 грн |
| 1000+ | 8.59 грн |
| BAT54AWQ-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| ZTL431AQFTA |
![]() |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.57 грн |
| 35+ | 12.14 грн |
| 39+ | 10.74 грн |
| 100+ | 9.25 грн |
| 250+ | 8.59 грн |
| 500+ | 8.18 грн |
| LMV358M8G-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Uoper: 2.7÷5.5V; MSOP8; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Uoper: 2.7÷5.5V; MSOP8; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
на замовлення 2295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.79 грн |
| 24+ | 17.26 грн |
| 28+ | 15.28 грн |
| 100+ | 12.64 грн |
| 125+ | 12.31 грн |
| 250+ | 11.15 грн |
| 500+ | 10.08 грн |
| 1000+ | 9.83 грн |
| ZTL432AFTA |
![]() |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 1542 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.57 грн |
| 35+ | 12.06 грн |
| 39+ | 10.74 грн |
| 100+ | 9.08 грн |
| 250+ | 9.00 грн |
| DMT3020LFDB-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LFDB-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LFDBQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LFDF-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LFDF-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LFDFQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 0.4W
Drain current: 6.7A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LFDFQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 28mΩ
Power dissipation: 1.1W
Drain current: 5.4A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LSDQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.5W
Drain current: 13A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020UFDB-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±12V
Gate charge: 8.8nC
On-state resistance: 30mΩ
Power dissipation: 1.3W
Drain current: 5.2A
Drain-source voltage: 30V
Pulsed drain current: 35A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
товару немає в наявності
В кошику
од. на суму грн.
| DMT30M9LPS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160.5nC
On-state resistance: 1.6mΩ
Power dissipation: 2.6W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| BC857BT-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 6165 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.56 грн |
| 57+ | 7.27 грн |
| 100+ | 4.26 грн |
| 500+ | 3.01 грн |
| 1000+ | 2.64 грн |
| 3000+ | 2.19 грн |
| 6000+ | 1.97 грн |
| BC857BW-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
на замовлення 113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.78 грн |
| 66+ | 6.28 грн |
| 113+ | 3.68 грн |
| ADTC114EUAQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 3000pcs.
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| DDTC114EUA-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
на замовлення 4739 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 52+ | 8.72 грн |
| 80+ | 5.20 грн |
| 96+ | 4.34 грн |
| 133+ | 3.12 грн |
| 1000+ | 2.00 грн |
| 3000+ | 1.60 грн |
| DMMT3904W-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
на замовлення 2949 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.12 грн |
| 26+ | 16.02 грн |
| 50+ | 11.07 грн |
| 100+ | 9.33 грн |
| 500+ | 6.52 грн |
| 1000+ | 5.78 грн |
| DMP4015SK3Q-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
On-state resistance: 15mΩ
Power dissipation: 3.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
On-state resistance: 15mΩ
Power dissipation: 3.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
на замовлення 2140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.28 грн |
| 10+ | 59.22 грн |
| 100+ | 40.30 грн |
| 500+ | 31.88 грн |
| DMP4015SSSQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.8A
On-state resistance: 15mΩ
Power dissipation: 1.45W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.8A
On-state resistance: 15mΩ
Power dissipation: 1.45W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
на замовлення 2037 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 104.95 грн |
| 10+ | 72.60 грн |
| 100+ | 47.41 грн |
| 250+ | 45.09 грн |
| 74LVC1G17SE-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
на замовлення 924 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.12 грн |
| 81+ | 5.12 грн |
| 97+ | 4.29 грн |
| 118+ | 3.50 грн |
| 153+ | 2.70 грн |
| 250+ | 2.42 грн |
| 500+ | 2.27 грн |
| 74LVC1G17W5-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Manufacturer series: LVC
на замовлення 2426 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.00 грн |
| 72+ | 5.78 грн |
| 81+ | 5.12 грн |
| 96+ | 4.33 грн |
| 120+ | 3.44 грн |
| 250+ | 3.10 грн |
| 500+ | 2.92 грн |
| 1000+ | 2.77 грн |
| PAM2863ECR |
![]() |
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 2A; SOP8; SMD; Ch: 1; reel,tape
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Output current: 2A
Number of channels: 1
Operating voltage: 4.5...40V DC
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 2A; SOP8; SMD; Ch: 1; reel,tape
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Output current: 2A
Number of channels: 1
Operating voltage: 4.5...40V DC
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.81 грн |
| 10+ | 44.10 грн |
| 11+ | 40.14 грн |
| 25+ | 35.51 грн |
| 50+ | 35.10 грн |
| SBR10U300CT |
![]() |
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 10A; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.92V
Max. forward impulse current: 150A
Technology: SBR®
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 10A; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.92V
Max. forward impulse current: 150A
Technology: SBR®
Kind of package: tube
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 141.42 грн |
| 10+ | 102.41 грн |
| 50+ | 61.94 грн |
| SBR40U300CT |
![]() |
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.89V
Max. forward impulse current: 235A
Technology: SBR®
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.89V
Max. forward impulse current: 235A
Technology: SBR®
Kind of package: tube
на замовлення 49 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 146.75 грн |
| 5+ | 126.36 грн |
| 10+ | 114.80 грн |
| 15+ | 105.71 грн |
| 25+ | 95.80 грн |
| AP2202K-3.3TRE1 |
![]() |
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2202
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2202
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
на замовлення 2390 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.34 грн |
| 50+ | 8.26 грн |
| 57+ | 7.35 грн |
| 100+ | 6.11 грн |
| 250+ | 5.95 грн |
| 74HC594S16-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: SO16
Family: HC
Number of channels: 4
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: SO16
Family: HC
Number of channels: 4
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
на замовлення 2156 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.13 грн |
| 18+ | 23.79 грн |
| 20+ | 21.31 грн |
| 25+ | 18.33 грн |
| 100+ | 15.03 грн |
| 250+ | 13.63 грн |
| 500+ | 12.72 грн |
| 1000+ | 12.06 грн |
| 74HC594T16-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: TSSOP16
Family: HC
Number of channels: 4
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: TSSOP16
Family: HC
Number of channels: 4
Supply voltage: 2...6V DC
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
товару немає в наявності
В кошику
од. на суму грн.
| LM2904QS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
на замовлення 2817 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.01 грн |
| 31+ | 13.63 грн |
| 38+ | 10.90 грн |
| 100+ | 7.93 грн |
| 250+ | 6.61 грн |
| 1000+ | 5.20 грн |
| LM2904S-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
на замовлення 647 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.69 грн |
| 22+ | 19.41 грн |
| 27+ | 15.61 грн |
| 100+ | 11.48 грн |
| 250+ | 9.42 грн |




















