Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71643) > Сторінка 1189 з 1195
| Фото | Назва | Виробник | Інформація |
Доступність |
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| DGD0215WT-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT driversDescription: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1 Case: TSOT25 Mounting: SMD Kind of package: reel; tape Supply voltage: 4.5...18V Kind of integrated circuit: gate driver; high-/low-side Type of integrated circuit: driver Kind of output: inverting Operating temperature: -40...125°C Output current: -1.8...1.9A Pulse fall time: 25ns Impulse rise time: 25ns Number of channels: 1 |
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| 74AHC1G08QSE-7 | DIODES INCORPORATED |
Category: Other logic integrated circuitsDescription: IC: digital Type of integrated circuit: digital |
на замовлення 9000 шт: термін постачання 14-30 дні (днів) |
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| 74AHC1G08QW5-7 | DIODES INCORPORATED |
Category: Other logic integrated circuitsDescription: IC: digital Type of integrated circuit: digital |
на замовлення 9000 шт: термін постачання 14-30 дні (днів) |
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| DSS5140U-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT323 Mounting: SMD Power dissipation: 0.5W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 40V Current gain: 160...800 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar Case: SOT323 Type of transistor: PNP |
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| DSS5140V-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 1A; 600mW; SOT563 Mounting: SMD Power dissipation: 0.6W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 40V Current gain: 160...800 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar Case: SOT563 Type of transistor: PNP |
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DMP2008UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Kind of package: 7 inch reel; tape Kind of channel: enhancement Mounting: SMD Case: PowerDI®3333-8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain-source voltage: -20V Drain current: -11A On-state resistance: 8mΩ Power dissipation: 2.4W Gate-source voltage: ±8V |
на замовлення 2870 шт: термін постачання 14-30 дні (днів) |
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DMP2004K-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Mounting: SMD Case: SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -600mA On-state resistance: 2Ω Power dissipation: 0.55W Gate-source voltage: ±8V |
на замовлення 1282 шт: термін постачання 14-30 дні (днів) |
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| DMHT3006LFJ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W Mounting: SMD Case: V-DFN5045-12 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17nC On-state resistance: 15mΩ Power dissipation: 2.1W Drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 80A |
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| SBRT10U60D1Q-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A Type of diode: Schottky rectifying Case: TO252/DPAK Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.52V Leakage current: 80µA Max. forward impulse current: 140A Kind of package: reel |
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| AS78L05MTR-G1 | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.8V Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Input voltage: 7...20V Manufacturer series: AS78LXX |
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| AS78L05MTR-E1 | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.8V Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Input voltage: 7...20V Manufacturer series: AS78LXX |
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DESD32VS2SO-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 34V; unidirectional; SOT23; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 34V Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 32V Leakage current: 0.1µA Number of channels: 2 Kind of package: reel; tape Capacitance: 42pF Application: automotive industry |
на замовлення 1656 шт: термін постачання 14-30 дні (днів) |
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| MBR10200CT-G1 | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.95V Max. forward impulse current: 100A Kind of package: tube Leakage current: 15mA |
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| 74LV04AS14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...150°C Kind of output: push-pull Family: LV Kind of package: reel; tape Kind of input: with Schmitt trigger Supply voltage: 2...5.5V DC |
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| 74LV04AT14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 6 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...150°C Kind of output: push-pull Family: LV Kind of package: reel; tape Kind of input: with Schmitt trigger Supply voltage: 2...5.5V DC |
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| DMNH6021SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 48A; 1.6W; PowerDI®5060-8 Mounting: SMD Polarisation: unipolar On-state resistance: 28mΩ Power dissipation: 1.6W Drain current: 48A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Case: PowerDI®5060-8 Type of transistor: N-MOSFET |
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| DMNH6021SPD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 25A; 1.5W; PowerDI®5060-8 Mounting: SMD Polarisation: unipolar On-state resistance: 40mΩ Power dissipation: 1.5W Drain current: 25A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 13 inch reel; tape Kind of channel: enhancement Case: PowerDI®5060-8 Type of transistor: N-MOSFET x2 |
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| DMNH6021SPDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W Mounting: SMD Polarisation: unipolar Gate charge: 20.1nC On-state resistance: 40mΩ Power dissipation: 2.8W Drain current: 6.5A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Case: PowerDI5060-8 Type of transistor: N-MOSFET |
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| DMNH6021SPDW-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W Mounting: SMD Polarisation: unipolar Gate charge: 20.1nC On-state resistance: 40mΩ Power dissipation: 2.8W Drain current: 6.5A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Kind of package: 13 inch reel; tape Kind of channel: enhancement Case: PowerDI5060-8 Type of transistor: N-MOSFET |
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| DMNH10H021SPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.4W; PowerDI5060-8 Mounting: SMD Polarisation: unipolar Gate charge: 71nC On-state resistance: 28mΩ Power dissipation: 4.4W Drain-source voltage: 100V Case: PowerDI5060-8 Type of transistor: N-MOSFET |
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1N4934-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns |
на замовлення 495 шт: термін постачання 14-30 дні (днів) |
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GBJ1508-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 15A Max. forward impulse current: 0.24kA Electrical mounting: THT Version: flat Max. forward voltage: 1.05V Leads: flat pin Case: GBJ Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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| 74LVC1G08FS3-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN0808-4 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
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| 74LVC1G08FW4-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
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| 74LVC1G08FW5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X1-DFN1010-6; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X1-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
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| 74LVC1G08FX4-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1409-6; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1409-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
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| 74LVC1G08Z-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT553 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
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В кошику од. на суму грн. | |||||||||||||||||
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DMN6140LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23 Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 On-state resistance: 0.14Ω Power dissipation: 0.7W Drain current: 1.2A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
на замовлення 398 шт: термін постачання 14-30 дні (днів) |
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DMN6140L-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23 Kind of package: 13 inch reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 On-state resistance: 0.14Ω Power dissipation: 0.7W Drain current: 1.2A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
на замовлення 9907 шт: термін постачання 14-30 дні (днів) |
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DMN6140L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23 Kind of package: 7 inch reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 On-state resistance: 0.14Ω Power dissipation: 0.7W Drain current: 1.2A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
на замовлення 2258 шт: термін постачання 14-30 дні (днів) |
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DMN6140LQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3 Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23-3 Gate charge: 8.6nC On-state resistance: 0.17Ω Power dissipation: 0.4W Drain current: 1.2A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
на замовлення 5262 шт: термін постачання 14-30 дні (днів) |
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AP2210N-3.6TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.3A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 3.6V Output current: 0.3A Case: SOT23 Mounting: SMD Manufacturer series: AP2210 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.5...13.2V |
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В кошику од. на суму грн. | ||||||||||||||||
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MMDT5401-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 150V; 0.2A; 200mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 60...240 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 300MHz |
на замовлення 450 шт: термін постачання 14-30 дні (днів) |
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| MMDT5401Q-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.2A Power dissipation: 0.32W Case: SOT363 Current gain: 50...240 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100...300MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
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ZXMS6004FFQTA | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT23F On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Control voltage: 60V DC |
на замовлення 3248 шт: термін постачання 14-30 дні (днів) |
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ZXMS6004FFTA | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT23F On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Control voltage: 60V DC |
на замовлення 3813 шт: термін постачання 14-30 дні (днів) |
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| ZXMS6004FFQ-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT23F On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
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BAS116-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 1285 шт: термін постачання 14-30 дні (днів) |
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BAS116Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: small signal |
на замовлення 3525 шт: термін постачання 14-30 дні (днів) |
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| BAS116LPH4-7B | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; DFN2; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: DFN2 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
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| BAS116Q-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
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| BAS116T-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT523 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
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| BAS116V-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT563; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: double independent Case: SOT563 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
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В кошику од. на суму грн. | |||||||||||||||||
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SMCJ58CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 2900 шт: термін постачання 14-30 дні (днів) |
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| SMCJ58CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
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BZX84C3V9Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 3.9V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
на замовлення 1480 шт: термін постачання 14-30 дні (днів) |
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BZX84C3V9-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 3.9V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 600 шт: термін постачання 14-30 дні (днів) |
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BZT52C3V9T-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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SMBJ100A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2995 шт: термін постачання 14-30 дні (днів) |
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AP2114HA-1.2TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2114HA-1.8TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AP2114HA-2.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 2.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP2114HA-2.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; fixed; 2.5V; 1A; SOT223-3; SMD; -40÷85°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed Voltage drop: 0.45V Output voltage: 2.5V Output current: 1A Case: SOT223-3 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Quiescent current: 80µA |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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| AS78L05ZTR-E1 | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.8V Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Input voltage: 7...20V Manufacturer series: AS78LXX |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS78L05ZTR-G1 | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.8V Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Input voltage: 7...20V Manufacturer series: AS78LXX |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCX5516TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Frequency: 150MHz Kind of package: reel; tape Quantity in set/package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX55TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Frequency: 150MHz Kind of package: reel; tape Quantity in set/package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX5510TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 1W Collector current: 1A Collector-emitter voltage: 60V Quantity in set/package: 1000pcs. Frequency: 150MHz Polarisation: bipolar |
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В кошику од. на суму грн. | ||||||||||||||||
| BCX55TC | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Pulsed collector current: 1.5A Mounting: SMD Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMMT2907A-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.28W Case: SOT26 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 307MHz Pulsed collector current: 1A Quantity in set/package: 3000pcs. |
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В кошику од. на суму грн. |
| DGD0215WT-7 |
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Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Case: TSOT25
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Output current: -1.8...1.9A
Pulse fall time: 25ns
Impulse rise time: 25ns
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Case: TSOT25
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Output current: -1.8...1.9A
Pulse fall time: 25ns
Impulse rise time: 25ns
Number of channels: 1
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| 74AHC1G08QSE-7 |
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Виробник: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: digital
Type of integrated circuit: digital
Category: Other logic integrated circuits
Description: IC: digital
Type of integrated circuit: digital
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.59 грн |
| 74AHC1G08QW5-7 |
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Виробник: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: digital
Type of integrated circuit: digital
Category: Other logic integrated circuits
Description: IC: digital
Type of integrated circuit: digital
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.81 грн |
| DSS5140U-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT323
Mounting: SMD
Power dissipation: 0.5W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 160...800
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT323
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT323
Mounting: SMD
Power dissipation: 0.5W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 160...800
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT323
Type of transistor: PNP
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| DSS5140V-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 160...800
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT563
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 600mW; SOT563
Mounting: SMD
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Current gain: 160...800
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT563
Type of transistor: PNP
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| DMP2008UFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 8mΩ
Power dissipation: 2.4W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 8mΩ
Power dissipation: 2.4W
Gate-source voltage: ±8V
на замовлення 2870 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.63 грн |
| 19+ | 22.83 грн |
| 50+ | 19.05 грн |
| 100+ | 18.13 грн |
| 500+ | 15.95 грн |
| 1000+ | 14.35 грн |
| 2000+ | 13.85 грн |
| DMP2004K-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Case: SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
On-state resistance: 2Ω
Power dissipation: 0.55W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Case: SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
On-state resistance: 2Ω
Power dissipation: 0.55W
Gate-source voltage: ±8V
на замовлення 1282 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.08 грн |
| 34+ | 12.59 грн |
| 50+ | 8.68 грн |
| 100+ | 7.28 грн |
| 500+ | 4.96 грн |
| 1000+ | 4.28 грн |
| DMHT3006LFJ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Mounting: SMD
Case: V-DFN5045-12
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Mounting: SMD
Case: V-DFN5045-12
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 80A
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| SBRT10U60D1Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
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| AS78L05MTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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| AS78L05MTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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| DESD32VS2SO-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 34V; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 34V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 32V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 42pF
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 34V; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 34V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 32V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 42pF
Application: automotive industry
на замовлення 1656 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.75 грн |
| 49+ | 8.73 грн |
| 100+ | 8.14 грн |
| 500+ | 7.97 грн |
| MBR10200CT-G1 |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 15mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 15mA
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| 74LV04AS14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
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| 74LV04AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
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| DMNH6021SPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 1.6W; PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Power dissipation: 1.6W
Drain current: 48A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Case: PowerDI®5060-8
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 1.6W; PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Power dissipation: 1.6W
Drain current: 48A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Case: PowerDI®5060-8
Type of transistor: N-MOSFET
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| DMNH6021SPD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 25A; 1.5W; PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 40mΩ
Power dissipation: 1.5W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Case: PowerDI®5060-8
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 25A; 1.5W; PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 40mΩ
Power dissipation: 1.5W
Drain current: 25A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Case: PowerDI®5060-8
Type of transistor: N-MOSFET x2
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| DMNH6021SPDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.1nC
On-state resistance: 40mΩ
Power dissipation: 2.8W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.1nC
On-state resistance: 40mΩ
Power dissipation: 2.8W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Case: PowerDI5060-8
Type of transistor: N-MOSFET
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| DMNH6021SPDW-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.1nC
On-state resistance: 40mΩ
Power dissipation: 2.8W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 80A; 2.8W
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.1nC
On-state resistance: 40mΩ
Power dissipation: 2.8W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Case: PowerDI5060-8
Type of transistor: N-MOSFET
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| DMNH10H021SPSW-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.4W; PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 28mΩ
Power dissipation: 4.4W
Drain-source voltage: 100V
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.4W; PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 28mΩ
Power dissipation: 4.4W
Drain-source voltage: 100V
Case: PowerDI5060-8
Type of transistor: N-MOSFET
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| 1N4934-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
на замовлення 495 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 87+ | 4.87 грн |
| 93+ | 4.53 грн |
| 131+ | 3.22 грн |
| GBJ1508-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 59 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 169.92 грн |
| 5+ | 115.82 грн |
| 10+ | 104.91 грн |
| 15+ | 99.03 грн |
| 74LVC1G08FS3-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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| 74LVC1G08FW4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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| 74LVC1G08FW5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X1-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X1-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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| 74LVC1G08FX4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1409-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1409-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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| 74LVC1G08Z-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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| DMN6140LQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 398 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.63 грн |
| 20+ | 21.57 грн |
| 50+ | 14.94 грн |
| 100+ | 12.67 грн |
| DMN6140L-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 9907 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.17 грн |
| 35+ | 12.09 грн |
| 50+ | 8.80 грн |
| 100+ | 7.70 грн |
| 500+ | 5.78 грн |
| 1000+ | 5.15 грн |
| 2000+ | 4.60 грн |
| 5000+ | 4.52 грн |
| DMN6140L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.14Ω
Power dissipation: 0.7W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 2258 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.17 грн |
| 38+ | 11.25 грн |
| 50+ | 8.39 грн |
| 100+ | 7.55 грн |
| 250+ | 6.63 грн |
| 500+ | 5.96 грн |
| 1000+ | 5.20 грн |
| 1500+ | 4.87 грн |
| DMN6140LQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Gate charge: 8.6nC
On-state resistance: 0.17Ω
Power dissipation: 0.4W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Gate charge: 8.6nC
On-state resistance: 0.17Ω
Power dissipation: 0.4W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 5262 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.31 грн |
| 23+ | 19.05 грн |
| 100+ | 12.25 грн |
| 500+ | 8.98 грн |
| 1000+ | 7.97 грн |
| 2000+ | 7.05 грн |
| 2500+ | 6.88 грн |
| 5000+ | 6.55 грн |
| AP2210N-3.6TRG1 |
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.6V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.6V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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| MMDT5401-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 60...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 60...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 450 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.50 грн |
| 30+ | 14.02 грн |
| 50+ | 10.16 грн |
| 100+ | 8.85 грн |
| MMDT5401Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
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| ZXMS6004FFQTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
на замовлення 3248 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 89.48 грн |
| 7+ | 65.80 грн |
| 10+ | 57.41 грн |
| 25+ | 47.50 грн |
| 50+ | 41.29 грн |
| 100+ | 36.09 грн |
| 500+ | 28.03 грн |
| ZXMS6004FFTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
на замовлення 3813 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.34 грн |
| 10+ | 52.62 грн |
| 25+ | 43.14 грн |
| 50+ | 38.52 грн |
| ZXMS6004FFQ-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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| BAS116-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 1285 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 62+ | 6.80 грн |
| 78+ | 5.44 грн |
| 102+ | 4.15 грн |
| 500+ | 3.31 грн |
| 1000+ | 2.94 грн |
| BAS116Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 3525 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 250+ | 1.92 грн |
| 275+ | 1.62 грн |
| 300+ | 1.43 грн |
| 1000+ | 1.28 грн |
| 3000+ | 1.20 грн |
| BAS116LPH4-7B |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; DFN2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; DFN2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS116Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| BAS116T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS116V-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT563; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double independent
Case: SOT563
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT563; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double independent
Case: SOT563
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| SMCJ58CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.42 грн |
| 13+ | 33.15 грн |
| 100+ | 22.58 грн |
| 500+ | 18.21 грн |
| 1000+ | 16.53 грн |
| SMCJ58CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| BZX84C3V9Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
на замовлення 1480 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 3.43 грн |
| 240+ | 1.89 грн |
| 500+ | 1.67 грн |
| BZX84C3V9-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 600 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 143+ | 2.94 грн |
| 219+ | 1.92 грн |
| 500+ | 1.54 грн |
| BZT52C3V9T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| SMBJ100A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.08 грн |
| 34+ | 12.42 грн |
| 40+ | 10.74 грн |
| 100+ | 7.05 грн |
| 500+ | 5.62 грн |
| 1000+ | 5.54 грн |
| AP2114HA-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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| AP2114HA-1.8TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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| AP2114HA-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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| AP2114HA-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 2.5V; 1A; SOT223-3; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.45V
Output voltage: 2.5V
Output current: 1A
Case: SOT223-3
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Quiescent current: 80µA
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 2.5V; 1A; SOT223-3; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.45V
Output voltage: 2.5V
Output current: 1A
Case: SOT223-3
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Quiescent current: 80µA
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 7.77 грн |
| AS78L05ZTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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| AS78L05ZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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| BCX5516TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
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| BCX55TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| BCX5510TA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 60V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Collector current: 1A
Collector-emitter voltage: 60V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
товару немає в наявності
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од. на суму грн.
| BCX55TC |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 1.5A
Mounting: SMD
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 1.5A
Mounting: SMD
Frequency: 150MHz
товару немає в наявності
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од. на суму грн.
| DMMT2907A-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.


















