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BS107PSTZ BS107PSTZ DIODES INCORPORATED BS107P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
6+87.52 грн
10+45.80 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BS107P BS107P DIODES INCORPORATED BS107P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 521 шт:
термін постачання 14-30 дні (днів)
8+61.08 грн
11+40.12 грн
25+33.86 грн
100+30.14 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
ZMR500FTA ZMR500FTA DIODES INCORPORATED ZMRSERIES.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Input voltage: 7...25V
Voltage drop: 0.005V
на замовлення 1295 шт:
термін постачання 14-30 дні (днів)
9+51.96 грн
13+34.54 грн
25+31.41 грн
100+29.12 грн
250+27.85 грн
500+26.41 грн
Мінімальне замовлення: 9 шт
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ZRB500F03TA ZRB500F03TA DIODES INCORPORATED ZRB500F03TA.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
3+152.24 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
B0520LW-7-F B0520LW-7-F DIODES INCORPORATED B0520LW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
Power dissipation: 0.41W
на замовлення 8894 шт:
термін постачання 14-30 дні (днів)
46+10.03 грн
63+6.77 грн
72+5.93 грн
105+4.04 грн
500+3.20 грн
1000+2.92 грн
3000+2.56 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
B0520LWQ-7-F B0520LWQ-7-F DIODES INCORPORATED B0520LW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Leakage current: 8mA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.41W
Application: automotive industry
Capacitance: 170pF
на замовлення 1359 шт:
термін постачання 14-30 дні (днів)
32+14.59 грн
36+12.02 грн
40+10.75 грн
100+7.03 грн
500+5.30 грн
1000+4.66 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
DT1140-04LP-7 DIODES INCORPORATED DT1140-04LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2510-10
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.5pF
Leakage current: 50nA
Number of channels: 4
Max. off-state voltage: 5.5V
Max. forward impulse current: 6A
Breakdown voltage: 6V
Peak pulse power dissipation: 60W
Application: Ethernet; USB
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DT1140-04LPQ-7 DIODES INCORPORATED DT1140-04LPQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2510-10
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.5pF
Leakage current: 50nA
Number of channels: 4
Max. off-state voltage: 5.5V
Max. forward impulse current: 6A
Breakdown voltage: 6V
Peak pulse power dissipation: 60W
Application: automotive industry; Ethernet; USB
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FZT1147ATA DIODES INCORPORATED FZT1147A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 5A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223
Power dissipation: 3W
Collector current: 5A
Pulsed collector current: 20A
Collector-emitter voltage: 12V
Current gain: 50...850
Quantity in set/package: 1000pcs.
Frequency: 115MHz
Polarisation: bipolar
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FZT1149ATA DIODES INCORPORATED FZT1149A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 4A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223
Power dissipation: 3W
Collector current: 4A
Pulsed collector current: 10A
Collector-emitter voltage: 25V
Current gain: 50...800
Quantity in set/package: 1000pcs.
Frequency: 135MHz
Polarisation: bipolar
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AS358P-E1 AS358P-E1 DIODES INCORPORATED AS358-358A-358B.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; DIP8; 100dB; 7mV; tube
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: THT
Voltage supply range: 3...36V DC
Case: DIP8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: tube
Power dissipation: 0.83W
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SMBJ28CA-13-F SMBJ28CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ28CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BAT54CWQ-7-F BAT54CWQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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BAT54WT-7 DIODES INCORPORATED ds31396.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.15W
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BAT54W-13-F BAT54W-13-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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BAT54W-7-F BAT54W-7-F DIODES INCORPORATED BAT54W_AW_CW_SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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BAT54WQ-7-F BAT54WQ-7-F DIODES INCORPORATED SWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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SD101BW-7-F SD101BW-7-F DIODES INCORPORATED ds11012.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 15mA; 1ns; reel,tape
Mounting: SMD
Capacitance: 2.1pF
Reverse recovery time: 1ns
Load current: 15mA
Max. forward impulse current: 2A
Power dissipation: 0.4W
Max. forward voltage: 0.95V
Max. off-state voltage: 50V
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
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SD101BWS-7-F SD101BWS-7-F DIODES INCORPORATED SD101AWS-SD101CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 50V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2.1pF
Max. forward voltage: 0.95V
Max. forward impulse current: 50mA
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.2W
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DDZ9700Q-7 DIODES INCORPORATED ds30410.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Application: automotive industry
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B330-13-F B330-13-F DIODES INCORPORATED b320-360.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.5V
Case: SMC
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 100A
на замовлення 2135 шт:
термін постачання 14-30 дні (днів)
12+38.29 грн
16+27.09 грн
18+24.72 грн
100+18.12 грн
350+15.07 грн
500+14.22 грн
1000+12.19 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
AP3125AKTR-G1 AP3125AKTR-G1 DIODES INCORPORATED AP3125A.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; flyback
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 60...70kHz
Duty cycle factor: 70...80%
на замовлення 845 шт:
термін постачання 14-30 дні (днів)
12+40.11 грн
16+27.85 грн
25+25.82 грн
100+22.86 грн
250+20.91 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
AP2331TDSA-7 AP2331TDSA-7 DIODES INCORPORATED AP2331TD.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SOT23; reel,tape
Mounting: SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Case: SOT23
Kind of package: reel; tape
Output current: 0.2A
On-state resistance: 0.25Ω
Number of channels: 1
Supply voltage: 2.7...5.2V DC
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FZT753TA FZT753TA DIODES INCORPORATED FZT753.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
на замовлення 3862 шт:
термін постачання 14-30 дні (днів)
7+67.46 грн
11+39.45 грн
100+25.40 грн
200+22.69 грн
500+19.64 грн
1000+17.86 грн
2000+16.85 грн
Мінімальне замовлення: 7 шт
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74LVC1G86W5-7 74LVC1G86W5-7 DIODES INCORPORATED 74LVC1G86.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86QW5-7 DIODES INCORPORATED 74LVC1G86Q.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FW4-7 DIODES INCORPORATED 74LVC1G86.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FW5-7 DIODES INCORPORATED 74LVC1G86.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FZ4-7 DIODES INCORPORATED 74LVC1G86.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86SE-7 DIODES INCORPORATED 74LVC1G86.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86Z-7 DIODES INCORPORATED 74LVC1G86.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86QSE-7 DIODES INCORPORATED 74LVC1G86Q.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+4.90 грн
Мінімальне замовлення: 3000 шт
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B0540WS-7 B0540WS-7 DIODES INCORPORATED B0540WS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.5A; reel,tape; 235mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 125pF
Max. forward voltage: 0.285V
Max. forward impulse current: 3A
Kind of package: reel; tape
Case: SOD323
Power dissipation: 235mW
на замовлення 1824 шт:
термін постачання 14-30 дні (днів)
32+14.59 грн
50+8.55 грн
100+6.43 грн
500+6.07 грн
1000+5.19 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
1N4001-T 1N4001-T DIODES INCORPORATED ds28002.pdf 1N4001-T.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
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ZXMC4559DN8TA ZXMC4559DN8TA DIODES INCORPORATED ZXMC4559DN8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
4+119.42 грн
10+66.37 грн
25+56.72 грн
100+44.44 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
AZ23C30-7-F AZ23C30-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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AZ23C24-7-F AZ23C24-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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DMPH2040UVTQ-7 DMPH2040UVTQ-7 DIODES INCORPORATED DMPH2040UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.5W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Application: automotive industry
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -3.9A
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B0530WS-7-F B0530WS-7-F DIODES INCORPORATED B0530WS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.5A; reel,tape; 235mW
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Capacitance: 58pF
Power dissipation: 235mW
Max. forward voltage: 0.45V
Load current: 0.5A
Max. forward impulse current: 2A
Max. off-state voltage: 30V
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
25+18.23 грн
30+14.22 грн
35+12.44 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
B0530W-7-F B0530W-7-F DIODES INCORPORATED B0530W.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
Power dissipation: 0.41W
на замовлення 2608 шт:
термін постачання 14-30 дні (днів)
50+9.12 грн
67+6.35 грн
102+4.19 грн
500+3.08 грн
600+3.00 грн
1000+2.76 грн
1500+2.58 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
SMBJ58CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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74AHCT1G125QSE-7 DIODES INCORPORATED 74AHCT1G125Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 2; CMOS; SMD; SOT353; -40÷150°C; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 4.5...5.5V DC
Family: AHCT
Kind of input: with Schmitt trigger
Case: SOT353
Number of inputs: 2
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74AHCT1G125QW5-7 DIODES INCORPORATED 74AHCT1G125Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 2; CMOS; SMD; SOT25; -40÷150°C; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 4.5...5.5V DC
Family: AHCT
Kind of input: with Schmitt trigger
Case: SOT25
Number of inputs: 2
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SMBJ14CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6V; 25.8A; bidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Manufacturer series: SMBJ
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+11.21 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZT585B4V3T-7 BZT585B4V3T-7 DIODES INCORPORATED BZT585BxVxT.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
63+7.29 грн
68+6.26 грн
73+5.93 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BZX84B4V3Q-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84B4V3-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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AL17150-10BS7-13 DIODES INCORPORATED AL17150-10B.pdf Category: LED drivers
Description: IC: driver; buck-boost,flyback; LED driver; SO7; 300mA; Ch: 1
Type of integrated circuit: driver
Topology: buck-boost; flyback
Kind of integrated circuit: LED driver
Case: SO7
Output current: 0.3A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8.2...8.8V DC
Kind of package: reel; tape
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SMBJ120CA-13-F SMBJ120CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2735 шт:
термін постачання 14-30 дні (днів)
34+13.67 грн
38+11.17 грн
41+10.33 грн
46+9.31 грн
100+8.21 грн
500+7.20 грн
1000+6.52 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
SMBJ120A-13-F SMBJ120A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ12CA-13-F SMAJ12CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 6441 шт:
термін постачання 14-30 дні (днів)
28+16.41 грн
36+11.85 грн
42+10.24 грн
59+7.28 грн
100+6.43 грн
250+5.50 грн
1000+4.83 грн
5000+4.57 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMAJ120CA-13-F SMAJ120CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; bidirectional; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 5µA
Max. forward impulse current: 2A
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
на замовлення 895 шт:
термін постачання 14-30 дні (днів)
25+18.23 грн
32+13.37 грн
41+10.33 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
SMAJ120A-13-F SMAJ120A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 5µA
Max. forward impulse current: 2A
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
на замовлення 1050 шт:
термін постачання 14-30 дні (днів)
25+18.23 грн
30+14.22 грн
36+11.85 грн
100+4.99 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
HD02-T HD02-T DIODES INCORPORATED HD01.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 313 шт:
термін постачання 14-30 дні (днів)
13+35.55 грн
18+24.13 грн
100+14.14 грн
150+12.78 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
DMN1019UVT-7 DMN1019UVT-7 DIODES INCORPORATED DMN1019UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 70A
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 50.4nC
On-state resistance: 41mΩ
Power dissipation: 1.11W
Drain current: 10.1A
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DMN1019USN-13 DIODES INCORPORATED DMN1019USN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Mounting: SMD
Case: SC59
Kind of package: 13 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 70A
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 50.6nC
On-state resistance: 41mΩ
Power dissipation: 0.83W
Drain current: 8.8A
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DMN1019UFDE-7 DIODES INCORPORATED DMN1019UFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6; ESD
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Power dissipation: 0.69W
Drain current: 5A
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DMN1019UVT-13 DMN1019UVT-13 DIODES INCORPORATED DMN1019UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 70A
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 50.4nC
On-state resistance: 41mΩ
Power dissipation: 1.11W
Drain current: 10.1A
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DMN1019USN-7 DIODES INCORPORATED DMN1019USN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 12V; 9.3A; 1.2W; SC59; SMT
Technology: MOSFET
Mounting: SMD
Case: SC59
Gate-source voltage: 8V
Drain-source voltage: 12V
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 50.6nC
On-state resistance: 10mΩ
Power dissipation: 1.2W
Drain current: 9.3A
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+10.12 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BS107PSTZ BS107P.pdf
BS107PSTZ
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+87.52 грн
10+45.80 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BS107P BS107P.pdf
BS107P
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 521 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+61.08 грн
11+40.12 грн
25+33.86 грн
100+30.14 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
ZMR500FTA ZMRSERIES.pdf
ZMR500FTA
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Input voltage: 7...25V
Voltage drop: 0.005V
на замовлення 1295 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+51.96 грн
13+34.54 грн
25+31.41 грн
100+29.12 грн
250+27.85 грн
500+26.41 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
ZRB500F03TA ZRB500F03TA.pdf
ZRB500F03TA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+152.24 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
B0520LW-7-F B0520LW.pdf
B0520LW-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
Power dissipation: 0.41W
на замовлення 8894 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+10.03 грн
63+6.77 грн
72+5.93 грн
105+4.04 грн
500+3.20 грн
1000+2.92 грн
3000+2.56 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
B0520LWQ-7-F B0520LW.pdf
B0520LWQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Leakage current: 8mA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.41W
Application: automotive industry
Capacitance: 170pF
на замовлення 1359 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.59 грн
36+12.02 грн
40+10.75 грн
100+7.03 грн
500+5.30 грн
1000+4.66 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
DT1140-04LP-7 DT1140-04LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2510-10
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.5pF
Leakage current: 50nA
Number of channels: 4
Max. off-state voltage: 5.5V
Max. forward impulse current: 6A
Breakdown voltage: 6V
Peak pulse power dissipation: 60W
Application: Ethernet; USB
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DT1140-04LPQ-7 DT1140-04LPQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2510-10
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.5pF
Leakage current: 50nA
Number of channels: 4
Max. off-state voltage: 5.5V
Max. forward impulse current: 6A
Breakdown voltage: 6V
Peak pulse power dissipation: 60W
Application: automotive industry; Ethernet; USB
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FZT1147ATA FZT1147A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 5A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223
Power dissipation: 3W
Collector current: 5A
Pulsed collector current: 20A
Collector-emitter voltage: 12V
Current gain: 50...850
Quantity in set/package: 1000pcs.
Frequency: 115MHz
Polarisation: bipolar
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FZT1149ATA FZT1149A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 4A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223
Power dissipation: 3W
Collector current: 4A
Pulsed collector current: 10A
Collector-emitter voltage: 25V
Current gain: 50...800
Quantity in set/package: 1000pcs.
Frequency: 135MHz
Polarisation: bipolar
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AS358P-E1 AS358-358A-358B.pdf
AS358P-E1
Виробник: DIODES INCORPORATED
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; DIP8; 100dB; 7mV; tube
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: THT
Voltage supply range: 3...36V DC
Case: DIP8
Operating temperature: -40...85°C
Open-loop gain: 100dB
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: tube
Power dissipation: 0.83W
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SMBJ28CA-13-F SMBJ_ser.pdf
SMBJ28CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ28CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BAT54CWQ-7-F SWQ.pdf
BAT54CWQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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BAT54WT-7 ds31396.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.15W
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BAT54W-13-F
BAT54W-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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BAT54W-7-F BAT54W_AW_CW_SW.pdf
BAT54W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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BAT54WQ-7-F SWQ.pdf
BAT54WQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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SD101BW-7-F ds11012.pdf
SD101BW-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 15mA; 1ns; reel,tape
Mounting: SMD
Capacitance: 2.1pF
Reverse recovery time: 1ns
Load current: 15mA
Max. forward impulse current: 2A
Power dissipation: 0.4W
Max. forward voltage: 0.95V
Max. off-state voltage: 50V
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
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SD101BWS-7-F SD101AWS-SD101CWS.pdf
SD101BWS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 50V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2.1pF
Max. forward voltage: 0.95V
Max. forward impulse current: 50mA
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.2W
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DDZ9700Q-7 ds30410.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Application: automotive industry
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B330-13-F b320-360.pdf
B330-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.5V
Case: SMC
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 100A
на замовлення 2135 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+38.29 грн
16+27.09 грн
18+24.72 грн
100+18.12 грн
350+15.07 грн
500+14.22 грн
1000+12.19 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
AP3125AKTR-G1 AP3125A.pdf
AP3125AKTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; flyback
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 60...70kHz
Duty cycle factor: 70...80%
на замовлення 845 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+40.11 грн
16+27.85 грн
25+25.82 грн
100+22.86 грн
250+20.91 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
AP2331TDSA-7 AP2331TD.pdf
AP2331TDSA-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SOT23; reel,tape
Mounting: SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Case: SOT23
Kind of package: reel; tape
Output current: 0.2A
On-state resistance: 0.25Ω
Number of channels: 1
Supply voltage: 2.7...5.2V DC
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FZT753TA FZT753.pdf
FZT753TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
на замовлення 3862 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+67.46 грн
11+39.45 грн
100+25.40 грн
200+22.69 грн
500+19.64 грн
1000+17.86 грн
2000+16.85 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
74LVC1G86W5-7 74LVC1G86.pdf
74LVC1G86W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86QW5-7 74LVC1G86Q.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FW4-7 74LVC1G86.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FW5-7 74LVC1G86.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FZ4-7 74LVC1G86.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86SE-7 74LVC1G86.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86Z-7 74LVC1G86.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86QSE-7 74LVC1G86Q.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+4.90 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
B0540WS-7 B0540WS.pdf
B0540WS-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.5A; reel,tape; 235mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 125pF
Max. forward voltage: 0.285V
Max. forward impulse current: 3A
Kind of package: reel; tape
Case: SOD323
Power dissipation: 235mW
на замовлення 1824 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.59 грн
50+8.55 грн
100+6.43 грн
500+6.07 грн
1000+5.19 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
1N4001-T ds28002.pdf 1N4001-T.pdf
1N4001-T
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
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ZXMC4559DN8TA ZXMC4559DN8.pdf
ZXMC4559DN8TA
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+119.42 грн
10+66.37 грн
25+56.72 грн
100+44.44 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
AZ23C30-7-F AZ23C_ser.pdf
AZ23C30-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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AZ23C24-7-F AZ23C_ser.pdf
AZ23C24-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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DMPH2040UVTQ-7 DMPH2040UVTQ.pdf
DMPH2040UVTQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.5W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Application: automotive industry
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -3.9A
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B0530WS-7-F B0530WS.pdf
B0530WS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.5A; reel,tape; 235mW
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Capacitance: 58pF
Power dissipation: 235mW
Max. forward voltage: 0.45V
Load current: 0.5A
Max. forward impulse current: 2A
Max. off-state voltage: 30V
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.23 грн
30+14.22 грн
35+12.44 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
B0530W-7-F B0530W.pdf
B0530W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape; 410mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
Power dissipation: 0.41W
на замовлення 2608 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.12 грн
67+6.35 грн
102+4.19 грн
500+3.08 грн
600+3.00 грн
1000+2.76 грн
1500+2.58 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
SMBJ58CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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74AHCT1G125QSE-7 74AHCT1G125Q.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 2; CMOS; SMD; SOT353; -40÷150°C; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 4.5...5.5V DC
Family: AHCT
Kind of input: with Schmitt trigger
Case: SOT353
Number of inputs: 2
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74AHCT1G125QW5-7 74AHCT1G125Q.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 2; CMOS; SMD; SOT25; -40÷150°C; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Supply voltage: 4.5...5.5V DC
Family: AHCT
Kind of input: with Schmitt trigger
Case: SOT25
Number of inputs: 2
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SMBJ14CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6V; 25.8A; bidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Manufacturer series: SMBJ
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+11.21 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZT585B4V3T-7 BZT585BxVxT.pdf
BZT585B4V3T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.29 грн
68+6.26 грн
73+5.93 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BZX84B4V3Q-7-F BZX84Bxxx.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84B4V3-7-F BZX84Bxxx.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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AL17150-10BS7-13 AL17150-10B.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck-boost,flyback; LED driver; SO7; 300mA; Ch: 1
Type of integrated circuit: driver
Topology: buck-boost; flyback
Kind of integrated circuit: LED driver
Case: SO7
Output current: 0.3A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8.2...8.8V DC
Kind of package: reel; tape
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SMBJ120CA-13-F SMBJ_ser.pdf
SMBJ120CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2735 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.67 грн
38+11.17 грн
41+10.33 грн
46+9.31 грн
100+8.21 грн
500+7.20 грн
1000+6.52 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
SMBJ120A-13-F SMBJ_ser.pdf
SMBJ120A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ12CA-13-F SMAJ_ser.pdf
SMAJ12CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 6441 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.41 грн
36+11.85 грн
42+10.24 грн
59+7.28 грн
100+6.43 грн
250+5.50 грн
1000+4.83 грн
5000+4.57 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMAJ120CA-13-F SMAJ_ser.pdf
SMAJ120CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; bidirectional; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 5µA
Max. forward impulse current: 2A
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
на замовлення 895 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.23 грн
32+13.37 грн
41+10.33 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
SMAJ120A-13-F SMAJ_ser.pdf
SMAJ120A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 5µA
Max. forward impulse current: 2A
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
на замовлення 1050 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.23 грн
30+14.22 грн
36+11.85 грн
100+4.99 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
HD02-T HD01.pdf
HD02-T
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MiniDIP
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 313 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+35.55 грн
18+24.13 грн
100+14.14 грн
150+12.78 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
DMN1019UVT-7 DMN1019UVT.pdf
DMN1019UVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 70A
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 50.4nC
On-state resistance: 41mΩ
Power dissipation: 1.11W
Drain current: 10.1A
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DMN1019USN-13 DMN1019USN.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Mounting: SMD
Case: SC59
Kind of package: 13 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 70A
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 50.6nC
On-state resistance: 41mΩ
Power dissipation: 0.83W
Drain current: 8.8A
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DMN1019UFDE-7 DMN1019UFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6; ESD
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Power dissipation: 0.69W
Drain current: 5A
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DMN1019UVT-13 DMN1019UVT.pdf
DMN1019UVT-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 70A
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 50.4nC
On-state resistance: 41mΩ
Power dissipation: 1.11W
Drain current: 10.1A
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DMN1019USN-7 DMN1019USN.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 12V; 9.3A; 1.2W; SC59; SMT
Technology: MOSFET
Mounting: SMD
Case: SC59
Gate-source voltage: 8V
Drain-source voltage: 12V
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 50.6nC
On-state resistance: 10mΩ
Power dissipation: 1.2W
Drain current: 9.3A
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+10.12 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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