Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72157) > Сторінка 1192 з 1203
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| DMT4004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Case: PowerDI5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Gate charge: 82.2nC On-state resistance: 4mΩ Power dissipation: 2.6W Gate-source voltage: ±20V Pulsed drain current: 100A Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMT4005SCT | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB Case: TO220AB Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 85A Gate charge: 49.1nC On-state resistance: 3.8mΩ Power dissipation: 104W Gate-source voltage: ±20V Pulsed drain current: 160A Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||||
| DMT4008LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Case: PowerDI3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 9.7A Gate charge: 17.1nC On-state resistance: 12mΩ Power dissipation: 1.9W Gate-source voltage: ±20V Pulsed drain current: 70A Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SDT15H100P5-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 35mA Max. forward voltage: 0.66V Load current: 15A Max. off-state voltage: 0.1kV Max. forward impulse current: 350A Kind of package: reel; tape Case: PowerDI®5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SDT15H100P5-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 35mA Max. forward voltage: 0.66V Load current: 15A Max. off-state voltage: 0.1kV Max. forward impulse current: 350A Kind of package: reel; tape Case: PowerDI®5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SDT15H50P5-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 50V; 15A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 105mA Max. forward voltage: 0.47V Load current: 15A Max. off-state voltage: 50V Max. forward impulse current: 290A Kind of package: reel; tape Case: PowerDI®5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMMT493QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150MHz Current gain: 20...300 Pulsed collector current: 2A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FMMT493ATA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150MHz Current gain: 300...1200 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BZT52C30SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode Case: SOD323 Mounting: SMD Kind of package: reel; tape Application: automotive industry Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.2W Tolerance: ±7% Zener voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ZVP3306A | DIODES INCORPORATED |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -160mA Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 3223 шт: термін постачання 14-30 дні (днів) |
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ZVP3306FTA | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.6A Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2984 шт: термін постачання 14-30 дні (днів) |
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ZVN3306FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15A Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 3A |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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ZVN3306A | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.27A Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Pulsed drain current: 3A |
на замовлення 3574 шт: термін постачання 14-30 дні (днів) |
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SMBJ64A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 71.1...81.8V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3085 шт: термін постачання 14-30 дні (днів) |
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| BAV70WQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAV19W-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 1996 шт: термін постачання 14-30 дні (днів) |
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BAV19WS-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
на замовлення 1810 шт: термін постачання 14-30 дні (днів) |
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| DDZ6V8C-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DDZ6V8CS-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DDZ6V8CSF-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DDZX6V8C-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±2.5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74AHCT1G08QSE-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74AHCT1G08QW5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74AHCT1G08W5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: totem pole Kind of input: with Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DDTB142TC-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; 0.22kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SOT23 Mounting: SMD Type of transistor: PNP Power dissipation: 0.2W Collector current: 0.5A Current gain: 100...600 Collector-emitter voltage: 50V Base resistor: 0.22kΩ Quantity in set/package: 3000pcs. Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DDTB143EC-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; R1: 4.7kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SOT23 Mounting: SMD Type of transistor: PNP Power dissipation: 0.2W Collector current: 0.5A Current gain: 100...600 Collector-emitter voltage: 50V Base resistor: 4.7kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 4.7kΩ Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DDTB143EU-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SOT323 Mounting: SMD Type of transistor: PNP Power dissipation: 0.2W Collector current: 0.5A Current gain: 100...600 Collector-emitter voltage: 50V Base resistor: 4.7kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 4.7kΩ Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C33-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 1004 шт: термін постачання 14-30 дні (днів) |
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| BZX84C33Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C33-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C33T-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT523 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BZX84C33Q-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 350mW; 33V; SMD; SOT23 Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6.1% Case: SOT23 |
на замовлення 10000 шт: термін постачання 14-30 дні (днів) |
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| AP2303MPTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8 Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output voltage: 0.6...3.3V Output current: 1.75A Operating voltage: 1.2...5.5/3...5.5V DC Number of channels: 1 Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Case: PSOP8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP2303MTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8 Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Output voltage: 0.6...3.3V Output current: 1.75A Operating voltage: 1.2...5.5/3...5.5V DC Number of channels: 1 Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Case: SO8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MJD340-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Collector current: 0.5A Pulsed collector current: 0.75A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Quantity in set/package: 2500pcs. Frequency: 10MHz Case: DPAK; TO252 Polarisation: bipolar |
на замовлення 2480 шт: термін постачання 14-30 дні (днів) |
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| DMP2078LCA3-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: 7 inch reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: X4-DSN1006-3 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -13A Drain current: -2.7A Gate charge: 1.6nC On-state resistance: 0.6Ω Power dissipation: 1.4W Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ40CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 3597 шт: термін постачання 14-30 дні (днів) |
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| SMAJ40CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAV116WS-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAV116WSQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC86AT14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...150°C Kind of output: push-pull Family: LVC Supply voltage: 1.65...5.5V DC Kind of package: reel; tape |
на замовлення 2222 шт: термін постачання 14-30 дні (днів) |
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S1M-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF |
на замовлення 13713 шт: термін постачання 14-30 дні (днів) |
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BZX84C2V7Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BZX84C2V7T-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7% Case: SOT523 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C2V7TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Case: SOT363 Kind of package: reel; tape Semiconductor structure: triple independent |
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BZX84C2V7W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.7V Mounting: SMD Tolerance: ±7.5% Case: SOT323 Kind of package: reel; tape Semiconductor structure: single diode |
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В кошику од. на суму грн. | ||||||||||||||||
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SMAJ60CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ60CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMCJ5.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | ||||||||||||||||
| SMCJ5.0AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| 3.0SMCJ5.0A-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 326.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||||||
| PDS835L-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 35V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.51V Max. forward impulse current: 120A Kind of package: reel; tape Leakage current: 35mA |
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| PDS835L-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®5 Mounting: SMD Max. off-state voltage: 35V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.51V Max. forward impulse current: 120A Kind of package: reel; tape Leakage current: 35mA |
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В кошику од. на суму грн. | |||||||||||||||||
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SMAZ6V8-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode |
на замовлення 62 шт: термін постачання 14-30 дні (днів) |
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| DMTH10H4M6SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Power dissipation: 2.7W Case: PowerDI5060-8 On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 66nC Pulsed drain current: 400A Kind of channel: enhancement Drain current: 14A Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| DMTH10H4M6SPSWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Power dissipation: 4.7W Case: PowerDI5060-8 On-state resistance: 4.9mΩ Mounting: SMD Gate charge: 66nC Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| DMTH6006SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W Kind of channel: enhancement Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 400A Drain current: 12.6A Drain-source voltage: 60V Gate charge: 27.9nC On-state resistance: 6.2mΩ Power dissipation: 2.94W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| DMP4006SPSWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -460A Drain current: -92A Drain-source voltage: -40V Gate charge: 162nC On-state resistance: 7.9mΩ Power dissipation: 3.4W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
|
BAS70W-04-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Max. forward voltage: 1V Kind of package: reel; tape Max. forward impulse current: 0.1A |
на замовлення 1880 шт: термін постачання 14-30 дні (днів) |
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2N7002H-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 9092 шт: термін постачання 14-30 дні (днів) |
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| DMT4004LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Gate charge: 82.2nC
On-state resistance: 4mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Gate charge: 82.2nC
On-state resistance: 4mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
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| DMT4005SCT |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Gate charge: 49.1nC
On-state resistance: 3.8mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Pulsed drain current: 160A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Gate charge: 49.1nC
On-state resistance: 3.8mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Pulsed drain current: 160A
Kind of package: tube
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| DMT4008LFV-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.7A
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Gate-source voltage: ±20V
Pulsed drain current: 70A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.7A
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Gate-source voltage: ±20V
Pulsed drain current: 70A
Kind of package: 13 inch reel; tape
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| SDT15H100P5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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| SDT15H100P5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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| SDT15H50P5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 50V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 105mA
Max. forward voltage: 0.47V
Load current: 15A
Max. off-state voltage: 50V
Max. forward impulse current: 290A
Kind of package: reel; tape
Case: PowerDI®5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 50V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 105mA
Max. forward voltage: 0.47V
Load current: 15A
Max. off-state voltage: 50V
Max. forward impulse current: 290A
Kind of package: reel; tape
Case: PowerDI®5
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| FMMT493QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 20...300
Pulsed collector current: 2A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 20...300
Pulsed collector current: 2A
Application: automotive industry
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| FMMT493ATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 300...1200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 300...1200
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| BZT52C30SQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±7%
Zener voltage: 30V
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±7%
Zener voltage: 30V
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| ZVP3306A |
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Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 3223 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.89 грн |
| 10+ | 43.58 грн |
| 100+ | 25.00 грн |
| 200+ | 24.00 грн |
| ZVP3306FTA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2984 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.07 грн |
| 16+ | 27.00 грн |
| 30+ | 21.08 грн |
| 75+ | 17.00 грн |
| 100+ | 15.92 грн |
| 500+ | 11.67 грн |
| ZVN3306FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 3A
на замовлення 46 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.97 грн |
| 15+ | 29.75 грн |
| ZVN3306A |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: 3A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: 3A
на замовлення 3574 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.59 грн |
| 10+ | 45.66 грн |
| 100+ | 30.75 грн |
| 200+ | 27.33 грн |
| 500+ | 23.58 грн |
| 1000+ | 21.75 грн |
| SMBJ64A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3085 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.36 грн |
| 46+ | 9.17 грн |
| 100+ | 7.50 грн |
| 500+ | 6.00 грн |
| BAV70WQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| BAV19W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 1996 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.97 грн |
| 61+ | 6.92 грн |
| 100+ | 4.67 грн |
| 500+ | 3.18 грн |
| 1000+ | 2.72 грн |
| BAV19WS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 1810 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.97 грн |
| 68+ | 6.17 грн |
| 77+ | 5.42 грн |
| 128+ | 3.27 грн |
| 500+ | 2.42 грн |
| 1000+ | 2.18 грн |
| DDZ6V8C-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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| DDZ6V8CS-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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| DDZ6V8CSF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
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| DDZX6V8C-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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| 74AHCT1G08QSE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
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| 74AHCT1G08QW5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
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| 74AHCT1G08W5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: totem pole
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: totem pole
Kind of input: with Schmitt trigger
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| DDTB142TC-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; 0.22kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 0.22kΩ
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; 0.22kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 0.22kΩ
Quantity in set/package: 3000pcs.
Frequency: 200MHz
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| DDTB143EC-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
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| DDTB143EU-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT323
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT323
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
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| BZX84C33-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 1004 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.28 грн |
| 167+ | 2.50 грн |
| 235+ | 1.77 грн |
| 500+ | 1.48 грн |
| 1000+ | 1.39 грн |
| BZX84C33Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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| BZX84C33-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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| BZX84C33T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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| BZX84C33Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.30 грн |
| AP2303MPTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: PSOP8
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: PSOP8
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| AP2303MTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8
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| MJD340-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Pulsed collector current: 0.75A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Quantity in set/package: 2500pcs.
Frequency: 10MHz
Case: DPAK; TO252
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Pulsed collector current: 0.75A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Quantity in set/package: 2500pcs.
Frequency: 10MHz
Case: DPAK; TO252
Polarisation: bipolar
на замовлення 2480 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.43 грн |
| 12+ | 36.25 грн |
| 100+ | 22.42 грн |
| 500+ | 16.08 грн |
| 1000+ | 13.92 грн |
| DMP2078LCA3-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
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| SMAJ40CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 3597 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.77 грн |
| 50+ | 8.33 грн |
| 57+ | 7.33 грн |
| 100+ | 5.17 грн |
| 500+ | 4.58 грн |
| SMAJ40CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| BAV116WS-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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| BAV116WSQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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| 74LVC86AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
на замовлення 2222 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.10 грн |
| 23+ | 18.83 грн |
| 100+ | 11.92 грн |
| 250+ | 10.08 грн |
| 500+ | 8.83 грн |
| 1000+ | 7.75 грн |
| S1M-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 13713 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.67 грн |
| 59+ | 7.17 грн |
| 100+ | 4.35 грн |
| 500+ | 3.07 грн |
| 1000+ | 2.65 грн |
| 2500+ | 2.19 грн |
| 5000+ | 1.89 грн |
| 10000+ | 1.65 грн |
| BZX84C2V7Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| BZX84C2V7T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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| BZX84C2V7TS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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| BZX84C2V7W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
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| SMAJ60CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ60CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMCJ5.0A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMCJ5.0AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 3.0SMCJ5.0A-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| PDS835L-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
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| PDS835L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
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| SMAZ6V8-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
на замовлення 62 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.05 грн |
| 34+ | 12.50 грн |
| 38+ | 11.00 грн |
| DMTH10H4M6SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2.7W
Case: PowerDI5060-8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 66nC
Pulsed drain current: 400A
Kind of channel: enhancement
Drain current: 14A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2.7W
Case: PowerDI5060-8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 66nC
Pulsed drain current: 400A
Kind of channel: enhancement
Drain current: 14A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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| DMTH10H4M6SPSWQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 4.7W
Case: PowerDI5060-8
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 66nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 4.7W
Case: PowerDI5060-8
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 66nC
Application: automotive industry
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| DMTH6006SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 12.6A
Drain-source voltage: 60V
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.94W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 12.6A
Drain-source voltage: 60V
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.94W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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| DMP4006SPSWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
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| BAS70W-04-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
на замовлення 1880 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.95 грн |
| 33+ | 12.67 грн |
| 40+ | 10.67 грн |
| 100+ | 5.90 грн |
| 500+ | 4.64 грн |
| 1000+ | 4.12 грн |
| 2N7002H-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 9092 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.26 грн |
| 48+ | 8.83 грн |
| 55+ | 7.58 грн |
| 100+ | 4.78 грн |
| 500+ | 3.57 грн |
| 1000+ | 3.18 грн |
| 3000+ | 2.67 грн |















