Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73720) > Сторінка 1192 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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MMSZ5248BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 18V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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MMSZ5248BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B260AE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Semiconductor structure: single diode Case: SMA Mounting: SMD Leakage current: 14.5mA Kind of package: reel; tape Capacitance: 75pF Max. forward voltage: 0.65V Load current: 2A Max. forward impulse current: 50A |
на замовлення 2178 шт: термін постачання 14-30 дні (днів) |
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B290-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 90V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 75pF Max. forward voltage: 0.69V Load current: 2A Max. forward impulse current: 50A |
на замовлення 2770 шт: термін постачання 14-30 дні (днів) |
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AZ23C4V7-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; double,common anode Case: SOT23 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; double Zener voltage: 4.7V Type of diode: Zener Tolerance: ±5% Power dissipation: 0.3W |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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AZ23C4V3-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.3V; SMD; SOT23; double,common anode Case: SOT23 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; double Zener voltage: 4.3V Type of diode: Zener Tolerance: ±5% Power dissipation: 0.3W |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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AP9211SA-AL-HAC-7 | DIODES INCORPORATED |
Category: Battery and battery cells controllersDescription: IC: PMIC; battery charging controller; MOSFET,shutdown input Type of integrated circuit: PMIC Kind of integrated circuit: battery charging controller Integrated circuit features: MOSFET; shutdown input Mounting: SMD Number of rechargeable batteries: 1 x Li+ Case: U-DFN2030-6 Supply voltage: 1.5...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C |
на замовлення 2890 шт: термін постачання 14-30 дні (днів) |
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KBJ406G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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B190-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: SMA Kind of package: reel; tape Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 90V |
на замовлення 1138 шт: термін постачання 14-30 дні (днів) |
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| B190B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: SMB Leakage current: 5mA Kind of package: reel; tape Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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B190Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: SMA Application: automotive industry Leakage current: 5mA Kind of package: reel; tape Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| B190BQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: SMB Application: automotive industry Leakage current: 5mA Kind of package: reel; tape Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SB190-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 90V; 1A; DO41; Ufmax: 0.8V; reel Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 80pF Case: DO41 Kind of package: reel Max. forward voltage: 0.8V Load current: 1A Max. forward impulse current: 25A Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C11-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode Kind of package: reel; tape Case: SOT23 Type of diode: Zener Power dissipation: 0.35W Tolerance: ±5.5% Zener voltage: 11V Semiconductor structure: single diode Mounting: SMD |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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BZX84C11T-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 11V; SMD; SOT523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 11V Mounting: SMD Tolerance: ±5.5% Case: SOT523 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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DMMT3904W-13-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Current gain: 30...300 Quantity in set/package: 10000pcs. |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMMT3904WQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Current gain: 30...300 Quantity in set/package: 3000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMC2700UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1.14/-1.34A Power dissipation: 1.12W Case: SOT26 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
на замовлення 3146 шт: термін постачання 14-30 дні (днів) |
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DMC4029SK4-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Power dissipation: 1.6W Polarisation: unipolar Drain current: 6.7/-4.9A Kind of channel: enhancement Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: TO252-4 On-state resistance: 0.032/0.055Ω |
на замовлення 81 шт: термін постачання 14-30 дні (днів) |
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DMC2038LVT-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.1/-4.5A Power dissipation: 1.1W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.035/0.074Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMC3025LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.5/-8.5A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.02/0.045Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
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DMC3400SDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 0.5/-0.36A Power dissipation: 0.39W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.4/0.9Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
на замовлення 929 шт: термін постачання 14-30 дні (днів) |
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SMBJ45A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 50...57.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C2V4S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 2.4V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP6350S-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23 Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Drain-source voltage: -60V Pulsed drain current: -6A Drain current: -1.2A On-state resistance: 0.35Ω Power dissipation: 0.72W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
на замовлення 1465 шт: термін постачання 14-30 дні (днів) |
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AP130-15RG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; SC59R; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 1.5V Output current: 0.3A Case: SC59R Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.7...5.5V Kind of package: reel; tape |
на замовлення 2634 шт: термін постачання 14-30 дні (днів) |
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AP7313-33SRG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23R; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3.3V Output current: 0.15A Case: SOT23R Mounting: SMD Manufacturer series: AP7313 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V |
на замовлення 1333 шт: термін постачання 14-30 дні (днів) |
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| AL3353S-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; boost; LED driver; SO8; Ch: 1; 9÷40VDC Topology: boost Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: LED driver Kind of package: reel; tape Case: SO8 Operating temperature: -40...105°C Number of channels: 1 Operating voltage: 9...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP7313-25SAG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.5V Output current: 0.15A Case: SOT23 Mounting: SMD Manufacturer series: AP7313 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V |
на замовлення 2674 шт: термін постачання 14-30 дні (днів) |
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AP7313-33SAG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3.3V Output current: 0.15A Case: SOT23 Mounting: SMD Manufacturer series: AP7313 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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DMN6075S-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.5A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 2863 шт: термін постачання 14-30 дні (днів) |
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ZXMN6A07FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.1A Pulsed drain current: 6.9A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 1.65nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 6978 шт: термін постачання 14-30 дні (днів) |
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DMN62D0U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.38W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 7710 шт: термін постачання 14-30 дні (днів) |
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SMCJ26A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 35.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1303 шт: термін постачання 14-30 дні (днів) |
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SMBJ22A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMBJ22AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMAJ20CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape Type of diode: TVS Max. off-state voltage: 20V Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.4kW Features of semiconductor devices: glass passivated Leakage current: 5µA Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A |
на замовлення 366 шт: термін постачання 14-30 дні (днів) |
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| SMAJ20CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP5100WG-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...24V DC Output voltage: 0.81...15V DC Output current: 1.2A Case: SOT26 Mounting: SMD Frequency: 1.4MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 90% |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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SMAJ15A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 5027 шт: термін постачання 14-30 дні (днів) |
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SMAJ14A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 357 шт: термін постачання 14-30 дні (днів) |
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SMBJ13CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 27.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 1140 шт: термін постачання 14-30 дні (днів) |
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SMAJ13CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG9933USD-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -20A Drain current: -3A Gate charge: 6.5nC On-state resistance: 0.11Ω Power dissipation: 1.15W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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DMP3056LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.1A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 967 шт: термін постачання 14-30 дні (днів) |
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DMP3085LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -30V Drain current: -3.1A On-state resistance: 70mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 208 шт: термін постачання 14-30 дні (днів) |
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DMC4040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 1.8W Polarisation: unipolar Drain current: 7.3/-7.5A Kind of channel: enhancement Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.04/0.045Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMHC3025LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 1.5W Gate charge: 11.7/11.4nC Polarisation: unipolar Drain current: 6/-4.2A Kind of channel: enhancement Drain-source voltage: 30/-30V Kind of transistor: complementary pair Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 25/50mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN6040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A On-state resistance: 55mΩ Power dissipation: 0.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 324 шт: термін постачання 14-30 дні (днів) |
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DMG4800LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET x2 Mounting: SMD Case: SO8 On-state resistance: 22mΩ Power dissipation: 1.5W Drain current: 8.4A Gate-source voltage: ±25V Drain-source voltage: 30V Kind of package: 13 inch reel; tape |
на замовлення 443 шт: термін постачання 14-30 дні (днів) |
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DMP2040USD-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8 Mounting: SMD Case: SO8 Pulsed drain current: -30A Power dissipation: 1.6W Gate charge: 19nC Polarisation: unipolar Drain current: -5A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape On-state resistance: 52mΩ |
на замовлення 2230 шт: термін постачання 14-30 дні (днів) |
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DMP6050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8 Mounting: SMD Pulsed drain current: -32A Power dissipation: 1.2W Polarisation: unipolar Drain current: -3.9A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET x2 Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SO8 On-state resistance: 55mΩ |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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DMC4050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 1.8W Polarisation: unipolar Drain current: 5.8/-5.5A Kind of channel: enhancement Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V On-state resistance: 45/45mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BZX84B27-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 27V Mounting: SMD Tolerance: ±2% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMMT549TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 2A Current gain: 40...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMMT549ATA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 2A Current gain: 40...500 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMNH4015SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.8A Pulsed drain current: 80A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 33nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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DMNH4015SSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.8A Pulsed drain current: 80A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 33nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BZX84C3V9TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOT363 Semiconductor structure: triple independent Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C3V9W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOT323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| MMSZ5248BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.55 грн |
| 43+ | 9.90 грн |
| 47+ | 9.23 грн |
| MMSZ5248BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| B260AE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 14.5mA
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 14.5mA
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 2178 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.45 грн |
| 46+ | 9.23 грн |
| 100+ | 6.21 грн |
| 500+ | 5.37 грн |
| B290-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 90V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.69V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 90V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.69V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 2770 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.03 грн |
| 53+ | 7.97 грн |
| 100+ | 7.38 грн |
| 500+ | 7.04 грн |
| 1000+ | 6.37 грн |
| AZ23C4V7-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Zener voltage: 4.7V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.3W
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Zener voltage: 4.7V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.3W
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 20+ | 21.13 грн |
| 32+ | 13.42 грн |
| AZ23C4V3-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Zener voltage: 4.3V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.3W
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Zener voltage: 4.3V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.3W
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 14.26 грн |
| AP9211SA-AL-HAC-7 |
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Виробник: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Integrated circuit features: MOSFET; shutdown input
Mounting: SMD
Number of rechargeable batteries: 1 x Li+
Case: U-DFN2030-6
Supply voltage: 1.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Integrated circuit features: MOSFET; shutdown input
Mounting: SMD
Number of rechargeable batteries: 1 x Li+
Case: U-DFN2030-6
Supply voltage: 1.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.83 грн |
| 25+ | 36.73 грн |
| 100+ | 32.46 грн |
| 500+ | 31.28 грн |
| KBJ406G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 90.32 грн |
| 10+ | 44.11 грн |
| 20+ | 39.67 грн |
| B190-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
на замовлення 1138 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 49+ | 8.64 грн |
| 100+ | 7.12 грн |
| 500+ | 6.13 грн |
| B190B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
товару немає в наявності
В кошику
од. на суму грн.
| B190Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMA
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
товару немає в наявності
В кошику
од. на суму грн.
| B190BQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: SMB
Application: automotive industry
Leakage current: 5mA
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 90V
товару немає в наявності
В кошику
од. на суму грн.
| SB190-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 1A; DO41; Ufmax: 0.8V; reel
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: DO41
Kind of package: reel
Max. forward voltage: 0.8V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 90V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 1A; DO41; Ufmax: 0.8V; reel
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 80pF
Case: DO41
Kind of package: reel
Max. forward voltage: 0.8V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 90V
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C11-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5.5%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 11V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5.5%
Zener voltage: 11V
Semiconductor structure: single diode
Mounting: SMD
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.83 грн |
| BZX84C11T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 11V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 11V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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Мінімальне замовлення: 5 шт
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| DMMT3904W-13-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 30...300
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Current gain: 30...300
Quantity in set/package: 10000pcs.
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMMT3904WQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Current gain: 30...300
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Current gain: 30...300
Quantity in set/package: 3000pcs.
Application: automotive industry
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од. на суму грн.
| DMC2700UDM-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
на замовлення 3146 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 36+ | 11.66 грн |
| 51+ | 8.35 грн |
| 100+ | 7.13 грн |
| 500+ | 5.20 грн |
| 1000+ | 5.02 грн |
| 3000+ | 4.62 грн |
| DMC4029SK4-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 6.7/-4.9A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252-4
On-state resistance: 0.032/0.055Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 6.7/-4.9A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252-4
On-state resistance: 0.032/0.055Ω
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.54 грн |
| 10+ | 47.55 грн |
| 50+ | 33.04 грн |
| DMC2038LVT-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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од. на суму грн.
| DMC3025LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.58 грн |
| 14+ | 31.62 грн |
| DMC3400SDW-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
Power dissipation: 0.39W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.4/0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
Power dissipation: 0.39W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.4/0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
на замовлення 929 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 37+ | 11.57 грн |
| 42+ | 10.15 грн |
| 100+ | 6.42 грн |
| 500+ | 4.44 грн |
| SMBJ45A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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од. на суму грн.
| BZT52C2V4S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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В кошику
од. на суму грн.
| DMP6350S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Pulsed drain current: -6A
Drain current: -1.2A
On-state resistance: 0.35Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Pulsed drain current: -6A
Drain current: -1.2A
On-state resistance: 0.35Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 1465 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.35 грн |
| 15+ | 29.02 грн |
| 50+ | 20.13 грн |
| 100+ | 17.19 грн |
| 500+ | 12.24 грн |
| 1000+ | 11.74 грн |
| AP130-15RG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; SC59R; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 1.5V
Output current: 0.3A
Case: SC59R
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.7...5.5V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; SC59R; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 1.5V
Output current: 0.3A
Case: SC59R
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.7...5.5V
Kind of package: reel; tape
на замовлення 2634 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 26+ | 17.43 грн |
| 31+ | 13.59 грн |
| 100+ | 11.91 грн |
| 500+ | 11.07 грн |
| AP7313-33SRG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23R; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23R
Mounting: SMD
Manufacturer series: AP7313
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23R; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23R
Mounting: SMD
Manufacturer series: AP7313
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
на замовлення 1333 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 34+ | 12.58 грн |
| 39+ | 10.99 грн |
| 46+ | 9.31 грн |
| 100+ | 7.63 грн |
| 250+ | 7.04 грн |
| 500+ | 6.71 грн |
| AL3353S-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; boost; LED driver; SO8; Ch: 1; 9÷40VDC
Topology: boost
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...105°C
Number of channels: 1
Operating voltage: 9...40V DC
Category: LED drivers
Description: IC: driver; boost; LED driver; SO8; Ch: 1; 9÷40VDC
Topology: boost
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...105°C
Number of channels: 1
Operating voltage: 9...40V DC
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од. на суму грн.
| AP7313-25SAG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7313
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7313
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
на замовлення 2674 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.16 грн |
| 33+ | 12.92 грн |
| 37+ | 11.41 грн |
| 44+ | 9.73 грн |
| 100+ | 7.97 грн |
| 250+ | 7.30 грн |
| 500+ | 6.96 грн |
| AP7313-33SAG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7313
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7313
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.35 грн |
| 31+ | 13.42 грн |
| DMN6075S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2863 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.87 грн |
| 31+ | 13.84 грн |
| 50+ | 9.56 грн |
| 100+ | 8.13 грн |
| 500+ | 5.70 грн |
| 1000+ | 5.45 грн |
| ZXMN6A07FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 6.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 6.9A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 6.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 6978 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.09 грн |
| 13+ | 34.22 грн |
| 50+ | 22.90 грн |
| 100+ | 19.37 грн |
| 500+ | 14.34 грн |
| 1000+ | 12.92 грн |
| 3000+ | 11.41 грн |
| 6000+ | 10.73 грн |
| DMN62D0U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.38W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 7710 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 44+ | 9.56 грн |
| 50+ | 8.39 грн |
| 100+ | 5.64 грн |
| 500+ | 4.26 грн |
| 1000+ | 3.45 грн |
| 3000+ | 2.38 грн |
| SMCJ26A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 35.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1303 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.38 грн |
| 11+ | 40.26 грн |
| 12+ | 35.56 грн |
| 100+ | 22.56 грн |
| 500+ | 16.44 грн |
| 1000+ | 14.42 грн |
| SMBJ22A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMBJ22AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMAJ20CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
на замовлення 366 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.87 грн |
| 29+ | 14.76 грн |
| 33+ | 13.08 грн |
| 100+ | 8.05 грн |
| SMAJ20CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| AP5100WG-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...24V DC
Output voltage: 0.81...15V DC
Output current: 1.2A
Case: SOT26
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 90%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷24VDC; Uout: 0.81÷15VDC; 1.2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...24V DC
Output voltage: 0.81...15V DC
Output current: 1.2A
Case: SOT26
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 90%
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.13 грн |
| 18+ | 24.07 грн |
| 25+ | 21.80 грн |
| SMAJ15A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 5027 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 44+ | 9.73 грн |
| 57+ | 7.46 грн |
| 100+ | 6.79 грн |
| 250+ | 6.12 грн |
| 500+ | 5.70 грн |
| 1000+ | 5.45 грн |
| 5000+ | 5.12 грн |
| SMAJ14A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 357 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.68 грн |
| 27+ | 15.77 грн |
| 31+ | 13.59 грн |
| 100+ | 9.39 грн |
| SMBJ13CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.29 грн |
| 22+ | 19.96 грн |
| 25+ | 17.44 грн |
| 100+ | 10.40 грн |
| 500+ | 7.55 грн |
| 1000+ | 7.13 грн |
| SMAJ13CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DMG9933USD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.35 грн |
| 15+ | 29.27 грн |
| 100+ | 17.36 грн |
| 500+ | 12.33 грн |
| 1000+ | 10.90 грн |
| DMP3056LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 967 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.54 грн |
| 11+ | 40.42 грн |
| 100+ | 26.50 грн |
| 500+ | 20.46 грн |
| 650+ | 19.71 грн |
| DMP3085LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.61 грн |
| 21+ | 20.46 грн |
| 50+ | 14.26 грн |
| 100+ | 12.24 грн |
| DMC4040SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 7.3/-7.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.04/0.045Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 7.3/-7.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.04/0.045Ω
товару немає в наявності
В кошику
од. на суму грн.
| DMHC3025LSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.5W
Gate charge: 11.7/11.4nC
Polarisation: unipolar
Drain current: 6/-4.2A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25/50mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.5W
Gate charge: 11.7/11.4nC
Polarisation: unipolar
Drain current: 6/-4.2A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25/50mΩ
товару немає в наявності
В кошику
од. на суму грн.
| DMN6040SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 324 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.96 грн |
| 18+ | 24.32 грн |
| 50+ | 18.11 грн |
| 100+ | 16.94 грн |
| 250+ | 16.19 грн |
| DMG4800LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
On-state resistance: 22mΩ
Power dissipation: 1.5W
Drain current: 8.4A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
On-state resistance: 22mΩ
Power dissipation: 1.5W
Drain current: 8.4A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
на замовлення 443 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.90 грн |
| 11+ | 39.00 грн |
| 50+ | 27.00 грн |
| 100+ | 23.06 грн |
| DMP2040USD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Pulsed drain current: -30A
Power dissipation: 1.6W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
On-state resistance: 52mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Pulsed drain current: -30A
Power dissipation: 1.6W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
On-state resistance: 52mΩ
на замовлення 2230 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.48 грн |
| 11+ | 39.75 грн |
| 13+ | 34.72 грн |
| 100+ | 20.63 грн |
| 500+ | 15.35 грн |
| 1000+ | 13.84 грн |
| DMP6050SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Mounting: SMD
Pulsed drain current: -32A
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: -3.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 55mΩ
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Mounting: SMD
Pulsed drain current: -32A
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: -3.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 55mΩ
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.25 грн |
| 11+ | 41.76 грн |
| DMC4050SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.8/-5.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.8/-5.5A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
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| BZX84B27-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 27V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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| FMMT549TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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| FMMT549ATA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100MHz
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| DMNH4015SSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| DMNH4015SSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.8A; Idm: 80A; 1.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.8A
Pulsed drain current: 80A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| BZX84C3V9TS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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| BZX84C3V9W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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