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DMT4004LPS-13 DIODES INCORPORATED DMT4004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Gate charge: 82.2nC
On-state resistance: 4mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
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DMT4005SCT DMT4005SCT DIODES INCORPORATED DMT4005SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Gate charge: 49.1nC
On-state resistance: 3.8mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Pulsed drain current: 160A
Kind of package: tube
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DMT4008LFV-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.7A
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Gate-source voltage: ±20V
Pulsed drain current: 70A
Kind of package: 13 inch reel; tape
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SDT15H100P5-7 DIODES INCORPORATED SDT15H100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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SDT15H100P5-13 DIODES INCORPORATED SDT15H100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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SDT15H50P5-7 DIODES INCORPORATED SDT15H50P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 50V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 105mA
Max. forward voltage: 0.47V
Load current: 15A
Max. off-state voltage: 50V
Max. forward impulse current: 290A
Kind of package: reel; tape
Case: PowerDI®5
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FMMT493QTA DIODES INCORPORATED FMMT493.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 20...300
Pulsed collector current: 2A
Application: automotive industry
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FMMT493ATA FMMT493ATA DIODES INCORPORATED FMMT493A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 300...1200
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BZT52C30SQ-7-F DIODES INCORPORATED Ds30093-R20.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±7%
Zener voltage: 30V
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ZVP3306A ZVP3306A DIODES INCORPORATED ZVP3306A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 3223 шт:
термін постачання 14-30 дні (днів)
7+70.89 грн
10+43.58 грн
100+25.00 грн
200+24.00 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ZVP3306FTA ZVP3306FTA DIODES INCORPORATED ZVP3306F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2984 шт:
термін постачання 14-30 дні (днів)
11+43.07 грн
16+27.00 грн
30+21.08 грн
75+17.00 грн
100+15.92 грн
500+11.67 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ZVN3306FTA ZVN3306FTA DIODES INCORPORATED ZVN3306F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 3A
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
11+43.97 грн
15+29.75 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ZVN3306A ZVN3306A DIODES INCORPORATED ZVN3306A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: 3A
на замовлення 3574 шт:
термін постачання 14-30 дні (днів)
7+73.59 грн
10+45.66 грн
100+30.75 грн
200+27.33 грн
500+23.58 грн
1000+21.75 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SMBJ64A-13-F SMBJ64A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3085 шт:
термін постачання 14-30 дні (днів)
32+14.36 грн
46+9.17 грн
100+7.50 грн
500+6.00 грн
Мінімальне замовлення: 32
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BAV70WQ-7-F DIODES INCORPORATED BAV70W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV19W-7-F BAV19W-7-F DIODES INCORPORATED BAV19W-BAV21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 1996 шт:
термін постачання 14-30 дні (днів)
50+8.97 грн
61+6.92 грн
100+4.67 грн
500+3.18 грн
1000+2.72 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAV19WS-7-F BAV19WS-7-F DIODES INCORPORATED BAV19WS-BAV21WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 1810 шт:
термін постачання 14-30 дні (днів)
50+8.97 грн
68+6.17 грн
77+5.42 грн
128+3.27 грн
500+2.42 грн
1000+2.18 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DDZ6V8C-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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DDZ6V8CS-7 DIODES INCORPORATED ds30414.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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DDZ6V8CSF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
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DDZX6V8C-7 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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74AHCT1G08QSE-7 DIODES INCORPORATED 74AHCT1G08Q.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
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74AHCT1G08QW5-7 DIODES INCORPORATED 74AHCT1G08Q.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
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74AHCT1G08W5-7 74AHCT1G08W5-7 DIODES INCORPORATED 74AHCT1G08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: totem pole
Kind of input: with Schmitt trigger
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DDTB142TC-7-F DDTB142TC-7-F DIODES INCORPORATED DDTB_LO-R1_C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; 0.22kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 0.22kΩ
Quantity in set/package: 3000pcs.
Frequency: 200MHz
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DDTB143EC-7-F DDTB143EC-7-F DIODES INCORPORATED DDTB_XXXX_C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
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DDTB143EU-7-F DDTB143EU-7-F DIODES INCORPORATED DDTB_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT323
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
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BZX84C33-7-F BZX84C33-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 1004 шт:
термін постачання 14-30 дні (днів)
72+6.28 грн
167+2.50 грн
235+1.77 грн
500+1.48 грн
1000+1.39 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BZX84C33Q-7-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C33-13-F BZX84C33-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84C33T-7-F BZX84C33T-7-F DIODES INCORPORATED BZX84CxxT_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C33Q-13-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
10000+2.30 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
AP2303MPTR-G1 DIODES INCORPORATED AP2303.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: PSOP8
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AP2303MTR-G1 AP2303MTR-G1 DIODES INCORPORATED AP2303.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8
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MJD340-13 DIODES INCORPORATED ds31609.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Pulsed collector current: 0.75A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Quantity in set/package: 2500pcs.
Frequency: 10MHz
Case: DPAK; TO252
Polarisation: bipolar
на замовлення 2480 шт:
термін постачання 14-30 дні (днів)
8+57.43 грн
12+36.25 грн
100+22.42 грн
500+16.08 грн
1000+13.92 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DMP2078LCA3-7 DIODES INCORPORATED DMP2078LCA3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
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SMAJ40CA-13-F SMAJ40CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 3597 шт:
термін постачання 14-30 дні (днів)
42+10.77 грн
50+8.33 грн
57+7.33 грн
100+5.17 грн
500+4.58 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SMAJ40CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BAV116WS-7 DIODES INCORPORATED BAV116WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAV116WSQ-7 BAV116WSQ-7 DIODES INCORPORATED BAV116WSQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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74LVC86AT14-13 74LVC86AT14-13 DIODES INCORPORATED 74LVC86A.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
на замовлення 2222 шт:
термін постачання 14-30 дні (днів)
14+34.10 грн
23+18.83 грн
100+11.92 грн
250+10.08 грн
500+8.83 грн
1000+7.75 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
S1M-13-F S1M-13-F DIODES INCORPORATED s1ab-s1mb.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 13713 шт:
термін постачання 14-30 дні (днів)
39+11.67 грн
59+7.17 грн
100+4.35 грн
500+3.07 грн
1000+2.65 грн
2500+2.19 грн
5000+1.89 грн
10000+1.65 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BZX84C2V7Q-7-F BZX84C2V7Q-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84C2V7T-7-F DIODES INCORPORATED ds30262.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84C2V7TS-7-F BZX84C2V7TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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BZX84C2V7W-7-F BZX84C2V7W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
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SMAJ60CA-13-F SMAJ60CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ60CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ5.0A-13-F SMCJ5.0A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ5.0AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ5.0A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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PDS835L-13 DIODES INCORPORATED ds30488.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
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PDS835L-7 DIODES INCORPORATED ds30488.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
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SMAZ6V8-13-F SMAZ6V8-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
на замовлення 62 шт:
термін постачання 14-30 дні (днів)
27+17.05 грн
34+12.50 грн
38+11.00 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
DMTH10H4M6SPS-13 DIODES INCORPORATED DMTH10H4M6SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2.7W
Case: PowerDI5060-8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 66nC
Pulsed drain current: 400A
Kind of channel: enhancement
Drain current: 14A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H4M6SPSWQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 4.7W
Case: PowerDI5060-8
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 66nC
Application: automotive industry
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DMTH6006SPS-13 DIODES INCORPORATED DMTH6006SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 12.6A
Drain-source voltage: 60V
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.94W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4006SPSWQ-13 DIODES INCORPORATED DMP4006SPSWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
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BAS70W-04-7-F BAS70W-04-7-F DIODES INCORPORATED BAS70W_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
на замовлення 1880 шт:
термін постачання 14-30 дні (днів)
25+17.95 грн
33+12.67 грн
40+10.67 грн
100+5.90 грн
500+4.64 грн
1000+4.12 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
2N7002H-7 2N7002H-7 DIODES INCORPORATED 2N7002H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 9092 шт:
термін постачання 14-30 дні (днів)
30+15.26 грн
48+8.83 грн
55+7.58 грн
100+4.78 грн
500+3.57 грн
1000+3.18 грн
3000+2.67 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DMT4004LPS-13 DMT4004LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Gate charge: 82.2nC
On-state resistance: 4mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
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DMT4005SCT DMT4005SCT.pdf
DMT4005SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Gate charge: 49.1nC
On-state resistance: 3.8mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Pulsed drain current: 160A
Kind of package: tube
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DMT4008LFV-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.7A
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Gate-source voltage: ±20V
Pulsed drain current: 70A
Kind of package: 13 inch reel; tape
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SDT15H100P5-7 SDT15H100P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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SDT15H100P5-13 SDT15H100P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 35mA
Max. forward voltage: 0.66V
Load current: 15A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 350A
Kind of package: reel; tape
Case: PowerDI®5
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SDT15H50P5-7 SDT15H50P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 50V; 15A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 105mA
Max. forward voltage: 0.47V
Load current: 15A
Max. off-state voltage: 50V
Max. forward impulse current: 290A
Kind of package: reel; tape
Case: PowerDI®5
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FMMT493QTA FMMT493.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 20...300
Pulsed collector current: 2A
Application: automotive industry
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FMMT493ATA FMMT493A.pdf
FMMT493ATA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 300...1200
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BZT52C30SQ-7-F Ds30093-R20.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±7%
Zener voltage: 30V
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ZVP3306A ZVP3306A.pdf
ZVP3306A
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 3223 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+70.89 грн
10+43.58 грн
100+25.00 грн
200+24.00 грн
Мінімальне замовлення: 7
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ZVP3306FTA ZVP3306F.pdf
ZVP3306FTA
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; 0.33W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2984 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+43.07 грн
16+27.00 грн
30+21.08 грн
75+17.00 грн
100+15.92 грн
500+11.67 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ZVN3306FTA ZVN3306F.pdf
ZVN3306FTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 3A
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+43.97 грн
15+29.75 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ZVN3306A ZVN3306A.pdf
ZVN3306A
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: 3A
на замовлення 3574 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+73.59 грн
10+45.66 грн
100+30.75 грн
200+27.33 грн
500+23.58 грн
1000+21.75 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SMBJ64A-13-F SMBJ_ser.pdf
SMBJ64A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3085 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.36 грн
46+9.17 грн
100+7.50 грн
500+6.00 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
BAV70WQ-7-F BAV70W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV19W-7-F BAV19W-BAV21W.pdf
BAV19W-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 1996 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+8.97 грн
61+6.92 грн
100+4.67 грн
500+3.18 грн
1000+2.72 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAV19WS-7-F BAV19WS-BAV21WS.pdf
BAV19WS-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 1810 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+8.97 грн
68+6.17 грн
77+5.42 грн
128+3.27 грн
500+2.42 грн
1000+2.18 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DDZ6V8C-7 DDZ5V1B-DDZ43.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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DDZ6V8CS-7 ds30414.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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DDZ6V8CSF-7 ds31987.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
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DDZX6V8C-7 ds30408.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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74AHCT1G08QSE-7 74AHCT1G08Q.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
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74AHCT1G08QW5-7 74AHCT1G08Q.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
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74AHCT1G08W5-7 74AHCT1G08.pdf
74AHCT1G08W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: totem pole
Kind of input: with Schmitt trigger
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DDTB142TC-7-F DDTB_LO-R1_C.pdf
DDTB142TC-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; 0.22kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 0.22kΩ
Quantity in set/package: 3000pcs.
Frequency: 200MHz
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DDTB143EC-7-F DDTB_XXXX_C.pdf
DDTB143EC-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT23; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
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DDTB143EU-7-F DDTB_XXXX_U.pdf
DDTB143EU-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT323
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
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BZX84C33-7-F BZX84Cxx_SER.pdf
BZX84C33-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 1004 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.28 грн
167+2.50 грн
235+1.77 грн
500+1.48 грн
1000+1.39 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BZX84C33Q-7-F ds18001.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C33-13-F BZX84Cxx_SER.pdf
BZX84C33-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84C33T-7-F BZX84CxxT_SER.pdf
BZX84C33T-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C33Q-13-F ds18001.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 350mW; 33V; SMD; SOT23
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6.1%
Case: SOT23
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10000+2.30 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
AP2303MPTR-G1 AP2303.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: PSOP8
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AP2303MTR-G1 AP2303.pdf
AP2303MTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...3.3V
Output current: 1.75A
Operating voltage: 1.2...5.5/3...5.5V DC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Case: SO8
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MJD340-13 ds31609.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK,TO252
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Pulsed collector current: 0.75A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Quantity in set/package: 2500pcs.
Frequency: 10MHz
Case: DPAK; TO252
Polarisation: bipolar
на замовлення 2480 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+57.43 грн
12+36.25 грн
100+22.42 грн
500+16.08 грн
1000+13.92 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DMP2078LCA3-7 DMP2078LCA3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: X4-DSN1006-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.7A
Gate charge: 1.6nC
On-state resistance: 0.6Ω
Power dissipation: 1.4W
Gate-source voltage: ±12V
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SMAJ40CA-13-F SMAJ_ser.pdf
SMAJ40CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 3597 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.77 грн
50+8.33 грн
57+7.33 грн
100+5.17 грн
500+4.58 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SMAJ40CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BAV116WS-7 BAV116WS.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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BAV116WSQ-7 BAV116WSQ.pdf
BAV116WSQ-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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74LVC86AT14-13 74LVC86A.pdf
74LVC86AT14-13
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
на замовлення 2222 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.10 грн
23+18.83 грн
100+11.92 грн
250+10.08 грн
500+8.83 грн
1000+7.75 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
S1M-13-F s1ab-s1mb.pdf
S1M-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 13713 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.67 грн
59+7.17 грн
100+4.35 грн
500+3.07 грн
1000+2.65 грн
2500+2.19 грн
5000+1.89 грн
10000+1.65 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BZX84C2V7Q-7-F BZX84Cxx_SER.pdf
BZX84C2V7Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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BZX84C2V7T-7-F ds30262.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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BZX84C2V7TS-7-F BZX84CxxTS_SER.pdf
BZX84C2V7TS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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BZX84C2V7W-7-F BZX84CxxW_SER.pdf
BZX84C2V7W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±7.5%
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
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SMAJ60CA-13-F SMAJ_ser.pdf
SMAJ60CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ60CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ5.0A-13-F SMCJ_ser.pdf
SMCJ5.0A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ5.0AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ5.0A-13 3.0SMCJxx.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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PDS835L-13 ds30488.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
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PDS835L-7 ds30488.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 35mA
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SMAZ6V8-13-F SMAZx-13-F.pdf
SMAZ6V8-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
на замовлення 62 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+17.05 грн
34+12.50 грн
38+11.00 грн
Мінімальне замовлення: 27
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DMTH10H4M6SPS-13 DMTH10H4M6SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2.7W
Case: PowerDI5060-8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 66nC
Pulsed drain current: 400A
Kind of channel: enhancement
Drain current: 14A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H4M6SPSWQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 4.7W
Case: PowerDI5060-8
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 66nC
Application: automotive industry
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DMTH6006SPS-13 DMTH6006SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 12.6A
Drain-source voltage: 60V
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.94W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4006SPSWQ-13 DMP4006SPSWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
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BAS70W-04-7-F BAS70W_-04_-05_-06.pdf
BAS70W-04-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
на замовлення 1880 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.95 грн
33+12.67 грн
40+10.67 грн
100+5.90 грн
500+4.64 грн
1000+4.12 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
2N7002H-7 2N7002H.pdf
2N7002H-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 9092 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+15.26 грн
48+8.83 грн
55+7.58 грн
100+4.78 грн
500+3.57 грн
1000+3.18 грн
3000+2.67 грн
Мінімальне замовлення: 30
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