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DMN62D0LFB-7 DIODES INCORPORATED DMN62D0LFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75mA
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN62D0LFB-7B DIODES INCORPORATED DMN62D0LFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75mA
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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PI5L200WE PI5L200WE DIODES INCORPORATED PI5L200.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; SO16; 137MHz
Type of integrated circuit: analog switch
Number of channels: 4
Case: SO16
Mounting: SMD
Resistance: 12Ω
Operating temperature: -40...85°C
Bandwidth: 137MHz
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SMCJ160A-13-F SMCJ160A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ16CA-13-F SMCJ16CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SDT10100CT SDT10100CT DIODES INCORPORATED SDT10100CT-SDT10100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 10mA
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DDTA114TCA-7-F DDTA114TCA-7-F DIODES INCORPORATED DDTA_R1-ONLY_SERIES_CA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
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DDTA114YLP-7 DIODES INCORPORATED ds30807.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
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AP2204RB-5.0TRG1 AP2204RB-5.0TRG1 DIODES INCORPORATED AP2204_Jan2020.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; ±2%
Manufacturer series: AP2204
Operating temperature: -40...125°C
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.6...24V
Output current: 0.2A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Output voltage: 5V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
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DMC2020USD-13 DMC2020USD-13 DIODES INCORPORATED DMC2020USD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Version: ESD
Drain current: 6.3/-7.8A
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 0.02/0.033Ω
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DMP2010UFV-7 DIODES INCORPORATED DMP2010UFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AP22655WU-7 DIODES INCORPORATED AP22654_AP22655.pdf Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 3.1A; Ch: 1; SMD; TSOT26; reel,tape
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Output current: 3.1A
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TSOT26
Kind of integrated circuit: USB switch
Number of channels: 1
On-state resistance: 85mΩ
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SMCJ170CA-13-F DIODES INCORPORATED Automotive-Grade-SMAJ-SMBJ-SMCJ-3.0SMCJ-TVS-Diodes-NPA-112018.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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KBJ408G KBJ408G DIODES INCORPORATED KBJ4005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: KBJ
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
5+100.28 грн
10+48.93 грн
20+45.37 грн
40+41.56 грн
Мінімальне замовлення: 5 шт
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KBJ404G KBJ404G DIODES INCORPORATED KBJ4005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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KBJ4005G KBJ4005G DIODES INCORPORATED KBJ4005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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KBJ401G KBJ401G DIODES INCORPORATED KBJ4005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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BC847B-13-F BC847B-13-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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DESD1CAN2SOQ-7 DESD1CAN2SOQ-7 DIODES INCORPORATED DESD1CAN2SOQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 25.4V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Capacitance: 17pF
Application: automotive industry; CAN
Kind of package: reel; tape
на замовлення 178 шт:
термін постачання 14-30 дні (днів)
16+30.08 грн
18+23.53 грн
21+20.91 грн
100+13.21 грн
Мінімальне замовлення: 16 шт
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ZTX415STZ ZTX415STZ DIODES INCORPORATED ZTX415.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.68W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40MHz
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AZ23C6V8W-7-F AZ23C6V8W-7-F DIODES INCORPORATED ds30257.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; SOT323; double,common anode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: common anode; double
Kind of package: reel; tape
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ZMR330QFTA ZMR330QFTA DIODES INCORPORATED ZMR-Q.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.005V
Output voltage: 3.3V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Application: automotive industry
Input voltage: 7...25V
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BSS138DWK-13 BSS138DWK-13 DIODES INCORPORATED BSS138DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; 50V; 310mA; 330mW; SOT363
Type of transistor: N-MOSFET x2
Drain-source voltage: 50V
Drain current: 0.31A
Power dissipation: 0.33W
Case: SOT363
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.8nC
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
10000+2.64 грн
Мінімальне замовлення: 10000 шт
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AP2401S-13 AP2401S-13 DIODES INCORPORATED AP24x1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 70mΩ
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AN431AN-ATRG1 AN431AN-ATRG1 DIODES INCORPORATED AN431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 559 шт:
термін постачання 14-30 дні (днів)
46+10.03 грн
57+7.45 грн
66+6.43 грн
82+5.21 грн
100+4.23 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
SBR2045CT-G SBR2045CT-G DIODES INCORPORATED SBR2045.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; Ifsm: 120A; TO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Max. forward impulse current: 120A
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B380B-13-F B380B-13-F DIODES INCORPORATED ds30849.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 3A; reel,tape
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMB
Capacitance: 0.12nF
Type of diode: Schottky rectifying
Mounting: SMD
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 Мінімальне замовлення: 3000 шт
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B380-13-F DIODES INCORPORATED B370-B3100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Capacitance: 0.1nF
Type of diode: Schottky rectifying
Mounting: SMD
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 Мінімальне замовлення: 3000 шт
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SB380-T SB380-T DIODES INCORPORATED SB370_ser.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 3A; DO201AD; Ufmax: 0.79V
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Mounting: THT
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 Мінімальне замовлення: 3 шт
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FS1MED-7 DIODES INCORPORATED FS1MED.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1us; DO219AA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Case: DO219AA
Type of diode: rectifying
Reverse recovery time: 1µs
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
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 Мінімальне замовлення: 3000 шт
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FMMT558TA FMMT558TA DIODES INCORPORATED FMMT558.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
13+37.38 грн
19+22.94 грн
Мінімальне замовлення: 13 шт
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FMMT558QTA FMMT558QTA DIODES INCORPORATED FMMT558.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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SMBJ51CAQ-13-F SMBJ51CAQ-13-F DIODES INCORPORATED Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMBJ51A-13-F SMBJ51A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ51AQ-13-F SMBJ51AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMBJ78CA-13-F SMBJ78CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DFLS1150-7 DFLS1150-7 DIODES INCORPORATED DFLS1150.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 50A
Kind of package: reel; tape
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DFLS1150Q-7 DFLS1150Q-7 DIODES INCORPORATED DFLS1150Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; 13ns
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 50A
Kind of package: reel; tape
Reverse recovery time: 13ns
Application: automotive industry
Leakage current: 2µA
Capacitance: 28pF
товару немає в наявності
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AP7343D-33W5-7 AP7343D-33W5-7 DIODES INCORPORATED AP7343.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.31V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7343
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
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DMP6018LPS-13 DIODES INCORPORATED DMP6018LPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -240A
Power dissipation: 2.6W
Gate charge: 13.7nC
Polarisation: unipolar
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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DMT6018LDR-13 DIODES INCORPORATED DMT6018LDR.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 13.9nC
Polarisation: unipolar
Drain current: 9.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
товару немає в наявності
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DMT6018LDR-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 13.9nC
Polarisation: unipolar
Drain current: 9.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMP6018LPSQ-13 DIODES INCORPORATED DMP6018LPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -240A
Power dissipation: 2.6W
Gate charge: 13.7nC
Polarisation: unipolar
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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SBR140S1F-7 SBR140S1F-7 DIODES INCORPORATED SBR140S1F.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 40V; 1A; SOD123F; SBR®; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Type of diode: rectifying
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ZXTR2105F-7 ZXTR2105F-7 DIODES INCORPORATED ZXTR2105F.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT23; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...60V
на замовлення 3470 шт:
термін постачання 14-30 дні (днів)
18+26.44 грн
22+19.98 грн
24+17.78 грн
28+15.32 грн
50+13.97 грн
100+13.80 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BAT54-7-F BAT54-7-F DIODES INCORPORATED BAT54_a_c_s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 10687 шт:
термін постачання 14-30 дні (днів)
46+10.03 грн
72+5.93 грн
80+5.31 грн
106+4.00 грн
124+3.43 грн
500+2.51 грн
1000+2.16 грн
1500+1.99 грн
3000+1.75 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
DMP1022UFDF-7 DIODES INCORPORATED DMP1022UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
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DMP1022UFDEQ-7 DIODES INCORPORATED DMP1022UFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 0.16Ω
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 42.6nC
Polarisation: unipolar
Drain current: -9A
Kind of channel: enhancement
Drain-source voltage: -12V
Application: automotive industry
Type of transistor: P-MOSFET
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 Мінімальне замовлення: 3000 шт
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DMN2022UFDF-7 DIODES INCORPORATED DMN2022UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.42W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DDZ24ASF-7 DDZ24ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD323F; single diode; reel,tape
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Zener voltage: 24V
Type of diode: Zener
Mounting: SMD
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ZVN4306A ZVN4306A DIODES INCORPORATED ZVN4306A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 3151 шт:
термін постачання 14-30 дні (днів)
3+183.24 грн
10+84.65 грн
25+71.95 грн
30+71.11 грн
40+67.72 грн
50+66.03 грн
75+64.33 грн
100+62.64 грн
150+60.10 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
1N4935-T 1N4935-T DIODES INCORPORATED ds26002.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; reel,tape; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
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 Мінімальне замовлення: 5000 шт
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1N4935G-T 1N4935G-T DIODES INCORPORATED ds27002.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; reel,tape; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: glass passivated
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 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
SMCJ22CA-13-F SMCJ22CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZTX553 ZTX553 DIODES INCORPORATED ZTX552.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Manufacturer standard package: 4000pcs.
Current gain: 40...200
на замовлення 1404 шт:
термін постачання 14-30 дні (днів)
10+45.58 грн
16+27.51 грн
25+23.36 грн
100+20.65 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
ZTX749 ZTX749 DIODES INCORPORATED ZTX749.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 160MHz
Manufacturer standard package: 4000pcs.
на замовлення 3429 шт:
термін постачання 14-30 дні (днів)
5+92.99 грн
7+68.23 грн
10+59.26 грн
25+48.59 грн
100+36.32 грн
500+27.51 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
ZTX951 ZTX951 DIODES INCORPORATED ZTX951.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 4A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 120MHz
Manufacturer standard package: 4000pcs.
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
4+120.33 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
ZTX757 ZTX757 DIODES INCORPORATED ZTX756.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 30MHz
Manufacturer standard package: 4000pcs.
на замовлення 3870 шт:
термін постачання 14-30 дні (днів)
6+77.49 грн
10+44.95 грн
100+30.05 грн
250+26.07 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
DMWS120H100SM4 DIODES INCORPORATED DMWS120H100SM4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
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 Мінімальне замовлення: 30 шт
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ZTL432BFFTA DIODES INCORPORATED ZTL431%2C432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
товару немає в наявності
 Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DMN62D0LFB-7 DMN62D0LFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75mA
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN62D0LFB-7B DMN62D0LFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75mA
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PI5L200WE PI5L200.pdf
PI5L200WE
Виробник: DIODES INCORPORATED
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; SO16; 137MHz
Type of integrated circuit: analog switch
Number of channels: 4
Case: SO16
Mounting: SMD
Resistance: 12Ω
Operating temperature: -40...85°C
Bandwidth: 137MHz
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SMCJ160A-13-F SMCJ_ser.pdf
SMCJ160A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SMCJ16CA-13-F SMCJ_ser.pdf
SMCJ16CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SDT10100CT SDT10100CT-SDT10100CTFP.pdf
SDT10100CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 10mA
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DDTA114TCA-7-F DDTA_R1-ONLY_SERIES_CA.pdf
DDTA114TCA-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
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DDTA114YLP-7 ds30807.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
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AP2204RB-5.0TRG1 AP2204_Jan2020.pdf
AP2204RB-5.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; ±2%
Manufacturer series: AP2204
Operating temperature: -40...125°C
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.6...24V
Output current: 0.2A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Output voltage: 5V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DMC2020USD-13 DMC2020USD-13.pdf
DMC2020USD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Version: ESD
Drain current: 6.3/-7.8A
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 0.02/0.033Ω
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DMP2010UFV-7 DMP2010UFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AP22655WU-7 AP22654_AP22655.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 3.1A; Ch: 1; SMD; TSOT26; reel,tape
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Output current: 3.1A
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TSOT26
Kind of integrated circuit: USB switch
Number of channels: 1
On-state resistance: 85mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SMCJ170CA-13-F Automotive-Grade-SMAJ-SMBJ-SMCJ-3.0SMCJ-TVS-Diodes-NPA-112018.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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KBJ408G KBJ4005G_ser.pdf
KBJ408G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: KBJ
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+100.28 грн
10+48.93 грн
20+45.37 грн
40+41.56 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
KBJ404G KBJ4005G_ser.pdf
KBJ404G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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KBJ4005G KBJ4005G_ser.pdf
KBJ4005G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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KBJ401G KBJ4005G_ser.pdf
KBJ401G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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BC847B-13-F ds11108.pdf
BC847B-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DESD1CAN2SOQ-7 DESD1CAN2SOQ.pdf
DESD1CAN2SOQ-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 25.4V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Capacitance: 17pF
Application: automotive industry; CAN
Kind of package: reel; tape
на замовлення 178 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
16+30.08 грн
18+23.53 грн
21+20.91 грн
100+13.21 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
ZTX415STZ ZTX415.pdf
ZTX415STZ
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.68W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40MHz
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
AZ23C6V8W-7-F ds30257.pdf
AZ23C6V8W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; SOT323; double,common anode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: common anode; double
Kind of package: reel; tape
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В кошику  од. на суму  грн.
ZMR330QFTA ZMR-Q.pdf
ZMR330QFTA
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.005V
Output voltage: 3.3V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Application: automotive industry
Input voltage: 7...25V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BSS138DWK-13 BSS138DWK.pdf
BSS138DWK-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; 50V; 310mA; 330mW; SOT363
Type of transistor: N-MOSFET x2
Drain-source voltage: 50V
Drain current: 0.31A
Power dissipation: 0.33W
Case: SOT363
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.8nC
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10000+2.64 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
AP2401S-13 AP24x1.pdf
AP2401S-13
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 70mΩ
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
AN431AN-ATRG1 AN431.pdf
AN431AN-ATRG1
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 559 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
46+10.03 грн
57+7.45 грн
66+6.43 грн
82+5.21 грн
100+4.23 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
SBR2045CT-G SBR2045.pdf
SBR2045CT-G
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; Ifsm: 120A; TO220AB; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Max. forward impulse current: 120A
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B380B-13-F ds30849.pdf
B380B-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 3A; reel,tape
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMB
Capacitance: 0.12nF
Type of diode: Schottky rectifying
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
B380-13-F B370-B3100.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Capacitance: 0.1nF
Type of diode: Schottky rectifying
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SB380-T SB370_ser.pdf
SB380-T
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 3A; DO201AD; Ufmax: 0.79V
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FS1MED-7 FS1MED.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1us; DO219AA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Case: DO219AA
Type of diode: rectifying
Reverse recovery time: 1µs
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FMMT558TA FMMT558.pdf
FMMT558TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+37.38 грн
19+22.94 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
FMMT558QTA FMMT558.pdf
FMMT558QTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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SMBJ51CAQ-13-F
SMBJ51CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMBJ51A-13-F SMBJ_ser.pdf
SMBJ51A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ51AQ-13-F
SMBJ51AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMBJ78CA-13-F SMBJ_ser.pdf
SMBJ78CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DFLS1150-7 DFLS1150.pdf
DFLS1150-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 50A
Kind of package: reel; tape
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DFLS1150Q-7 DFLS1150Q.pdf
DFLS1150Q-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; 13ns
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 50A
Kind of package: reel; tape
Reverse recovery time: 13ns
Application: automotive industry
Leakage current: 2µA
Capacitance: 28pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
AP7343D-33W5-7 AP7343.pdf
AP7343D-33W5-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.31V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7343
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
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DMP6018LPS-13 DMP6018LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -240A
Power dissipation: 2.6W
Gate charge: 13.7nC
Polarisation: unipolar
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DMT6018LDR-13 DMT6018LDR.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 13.9nC
Polarisation: unipolar
Drain current: 9.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMT6018LDR-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 13.9nC
Polarisation: unipolar
Drain current: 9.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMP6018LPSQ-13 DMP6018LPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -240A
Power dissipation: 2.6W
Gate charge: 13.7nC
Polarisation: unipolar
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SBR140S1F-7 SBR140S1F.pdf
SBR140S1F-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 40V; 1A; SOD123F; SBR®; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Type of diode: rectifying
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ZXTR2105F-7 ZXTR2105F.pdf
ZXTR2105F-7
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT23; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...60V
на замовлення 3470 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+26.44 грн
22+19.98 грн
24+17.78 грн
28+15.32 грн
50+13.97 грн
100+13.80 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BAT54-7-F BAT54_a_c_s.pdf
BAT54-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 10687 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
46+10.03 грн
72+5.93 грн
80+5.31 грн
106+4.00 грн
124+3.43 грн
500+2.51 грн
1000+2.16 грн
1500+1.99 грн
3000+1.75 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
DMP1022UFDF-7 DMP1022UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
DMP1022UFDEQ-7 DMP1022UFDEQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 0.16Ω
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 42.6nC
Polarisation: unipolar
Drain current: -9A
Kind of channel: enhancement
Drain-source voltage: -12V
Application: automotive industry
Type of transistor: P-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMN2022UFDF-7 DMN2022UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.42W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
DDZ24ASF-7 ds31987.pdf
DDZ24ASF-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD323F; single diode; reel,tape
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Zener voltage: 24V
Type of diode: Zener
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
ZVN4306A ZVN4306A.pdf
ZVN4306A
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 3151 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+183.24 грн
10+84.65 грн
25+71.95 грн
30+71.11 грн
40+67.72 грн
50+66.03 грн
75+64.33 грн
100+62.64 грн
150+60.10 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
1N4935-T ds26002.pdf
1N4935-T
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; reel,tape; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
1N4935G-T ds27002.pdf
1N4935G-T
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; reel,tape; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
SMCJ22CA-13-F SMCJ_ser.pdf
SMCJ22CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
ZTX553 ZTX552.pdf
ZTX553
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Manufacturer standard package: 4000pcs.
Current gain: 40...200
на замовлення 1404 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+45.58 грн
16+27.51 грн
25+23.36 грн
100+20.65 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
ZTX749 ZTX749.pdf
ZTX749
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 160MHz
Manufacturer standard package: 4000pcs.
на замовлення 3429 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+92.99 грн
7+68.23 грн
10+59.26 грн
25+48.59 грн
100+36.32 грн
500+27.51 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
ZTX951 ZTX951.pdf
ZTX951
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 4A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 120MHz
Manufacturer standard package: 4000pcs.
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+120.33 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
ZTX757 ZTX756.pdf
ZTX757
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 30MHz
Manufacturer standard package: 4000pcs.
на замовлення 3870 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+77.49 грн
10+44.95 грн
100+30.05 грн
250+26.07 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
DMWS120H100SM4 DMWS120H100SM4.pdf
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
ZTL432BFFTA ZTL431%2C432.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
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