Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74088) > Сторінка 1231 з 1235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| DMC2025UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 700mW; uDFN6 Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 0.7W Case: uDFN6 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMP1046UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W Type of transistor: P-MOSFET x2 Polarisation: unipolar Power dissipation: 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 61mΩ Pulsed drain current: -15A Gate charge: 17.9nC Drain current: -3.8A Kind of channel: enhancement Drain-source voltage: -12V Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2025UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.8A Pulsed drain current: 35A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 31mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN3032LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.7W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 42mΩ Pulsed drain current: 25A Gate charge: 10.6nC Drain current: 5A Kind of channel: enhancement Drain-source voltage: 30V Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMC1028UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 12V; 6A; 1.36W; U-DFN2020-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 1.36W Case: U-DFN2020-6 Mounting: SMD On-state resistance: 17mΩ Gate charge: 18.5nC Drain current: 6A Kind of channel: enhancement Drain-source voltage: 12V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMC1029UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 1.4W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 0.065/0.21Ω Drain current: 3.7/-2.3A Kind of channel: enhancement Drain-source voltage: 12/-12V Kind of transistor: complementary pair Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMC1030UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 1.89W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 34/59mΩ Gate charge: 23.1/20.8nC Version: ESD Drain current: 5.1/-3.9A Kind of channel: enhancement Drain-source voltage: 12/-12V Kind of transistor: complementary pair Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN1029UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.4W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 65mΩ Drain current: 3.7A Kind of channel: enhancement Drain-source voltage: 12V Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2041UFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 65mΩ Pulsed drain current: 20A Gate charge: 15nC Drain current: 4.9A Kind of channel: enhancement Drain-source voltage: 20V Gate-source voltage: ±12V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMP1055UFDB-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 1.89W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 0.215Ω Pulsed drain current: -25A Gate charge: 20.8nC Drain current: -4A Kind of channel: enhancement Drain-source voltage: -12V Gate-source voltage: ±8V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMP2065UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Power dissipation: 0.74W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 0.1Ω Drain current: -3.2A Kind of channel: enhancement Drain-source voltage: -20V Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP2110UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar Type of transistor: P-MOSFET x2 Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DXTN5820DFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 6A; 1.25W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 6A Power dissipation: 1.25W Case: U-DFN2020-3 Pulsed collector current: 8A Mounting: SMD Frequency: 80MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DXTN5840CFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 5A; 1.25W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 5A Power dissipation: 1.25W Case: U-DFN2020-3 Pulsed collector current: 7A Mounting: SMD Frequency: 150MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DXTP5820CFDB-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 6A Power dissipation: 0.69W Case: U-DFN2020-3 Pulsed collector current: 8A Mounting: SMD Kind of package: reel; tape Frequency: 140MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DXTN58100CFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.25W Case: U-DFN2020-3 Pulsed collector current: 6A Mounting: SMD Frequency: 150MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMN2053UFDB-7 | DIODES INCORPORATED |
Category: Transistors - UnclassifiedDescription: DMN2053UFDB-7 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| DMP2090UFDB-7 | DIODES INCORPORATED |
Category: Transistors - Unclassified Description: DMP2090UFDB-7 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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DMP2165UW-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -15A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 3.5nC |
на замовлення 772 шт: термін постачання 14-30 дні (днів) |
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| DMN3016LFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 90A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 25.1nC |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
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2N7002T-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.15W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 2N7002TQ-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.15W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ZXTP08400BFFTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.2A Power dissipation: 0.84W Case: SOT23F Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 70MHz Manufacturer standard package: 3000pcs. |
на замовлення 1400 шт: термін постачання 14-30 дні (днів) |
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ZTX696BSTZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 180V Collector current: 0.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 70MHz |
на замовлення 1956 шт: термін постачання 14-30 дні (днів) |
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BAS40BRW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series x2 Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FZT705TC | DIODES INCORPORATED |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223 Mounting: SMD Type of transistor: PNP Current gain: 2000...30000 Kind of package: reel; tape Case: SOT223 Frequency: 160MHz Collector current: 2A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 120V Power dissipation: 3W Polarisation: bipolar Kind of transistor: Darlington |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FZT705TA | DIODES INCORPORATED |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223 Mounting: SMD Type of transistor: PNP Current gain: 2000...30000 Kind of package: reel; tape Case: SOT223 Frequency: 160MHz Collector current: 2A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 120V Power dissipation: 3W Polarisation: bipolar Kind of transistor: Darlington Pulsed collector current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FZT7053TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Case: SOT223 Frequency: 200MHz Collector current: 1.5A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 100V Power dissipation: 2W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FZT705QTA | DIODES INCORPORATED |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223 Mounting: SMD Application: automotive industry Type of transistor: PNP Current gain: 2000...30000 Kind of package: reel; tape Case: SOT223 Frequency: 160MHz Collector current: 2A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 120V Power dissipation: 3W Polarisation: bipolar Kind of transistor: Darlington Pulsed collector current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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D5V0L2B3SO-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape Type of diode: TVS array Max. off-state voltage: 5V Breakdown voltage: 6V Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Capacitance: 20pF Number of channels: 2 |
на замовлення 261 шт: термін постачання 14-30 дні (днів) |
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SMBJ10CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 10µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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SMBJ100CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B160AE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Max. off-state voltage: 60V Max. forward voltage: 0.65V Load current: 1A Max. forward impulse current: 30A Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 8mA Capacitance: 45pF Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| B160AF-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape Max. off-state voltage: 60V Max. forward voltage: 0.65V Load current: 1A Max. forward impulse current: 30A Case: SMA flat Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.2mA Capacitance: 45pF Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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B160B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.7V Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Capacitance: 0.11nF Type of diode: Schottky rectifying |
на замовлення 5525 шт: термін постачання 14-30 дні (днів) |
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B160S1F-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.65V Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 8.2mA Case: SOD123F Capacitance: 45pF Type of diode: Schottky rectifying |
на замовлення 1900 шт: термін постачання 14-30 дні (днів) |
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74LVC32AS14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
на замовлення 2169 шт: термін постачання 14-30 дні (днів) |
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FMMT417TD | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Kind of package: reel; tape Frequency: 40MHz Manufacturer standard package: 500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FMMT415TD | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Kind of package: reel; tape Frequency: 40MHz Manufacturer standard package: 500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AP22615BWU-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 3A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOT26 On-state resistance: 40mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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BZX84C6V2-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 5827 шт: термін постачання 14-30 дні (днів) |
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BZX84C6V2TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT363 Semiconductor structure: triple independent Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C6V2Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C6V2S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT363 Semiconductor structure: double independent Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C6V2W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SDM2U40CSP-7B | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: X3-WLB1608-2 Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Capacitance: 85pF Max. forward voltage: 0.53V Leakage current: 0.15mA Max. forward impulse current: 28A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
|
DFLS230LH-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®123 Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Capacitance: 85pF Max. forward voltage: 0.45V Leakage current: 15mA Max. forward impulse current: 75A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
SDT10A100CTFP | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V Mounting: THT Max. forward impulse current: 150A Max. forward voltage: 0.66V Max. off-state voltage: 0.1kV Load current: 5A x2 Max. load current: 10A Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 50µA Case: TO220FP Type of diode: Schottky rectifying |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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SDT10A100CT | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V Mounting: THT Max. forward impulse current: 150A Max. forward voltage: 0.73V Max. off-state voltage: 0.1kV Load current: 5A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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| PAM8904EJPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC Type of integrated circuit: driver Operating temperature: -40...150°C Voltage supply range: 1.5...5.5V DC Kind of package: reel; tape Case: UQFN12 Kind of integrated circuit: piezo sounder Number of channels: 1 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
ZTX853 | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.2W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 130MHz Manufacturer standard package: 4000pcs. |
на замовлення 3391 шт: термін постачання 14-30 дні (днів) |
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ZTX853STZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.2W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 130MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1SMB5943B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
LM2902AQS14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 100dB; 1mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 1mV Kind of package: reel; tape Open-loop gain: 100dB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
LM2902AQT14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LM2902AS14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
LM2902AT14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14 Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| LM2902QS14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; SO14; 10mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
LM2902QT14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 10mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LM2902S14-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 10mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. |
| DMC2025UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 700mW; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 0.7W
Case: uDFN6
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 700mW; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 0.7W
Case: uDFN6
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMP1046UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 61mΩ
Pulsed drain current: -15A
Gate charge: 17.9nC
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 61mΩ
Pulsed drain current: -15A
Gate charge: 17.9nC
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Gate-source voltage: ±8V
товару немає в наявності
В кошику
од. на суму грн.
| DMN2025UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Pulsed drain current: 35A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Pulsed drain current: 35A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMN3032LFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.7W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 42mΩ
Pulsed drain current: 25A
Gate charge: 10.6nC
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 30V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.7W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 42mΩ
Pulsed drain current: 25A
Gate charge: 10.6nC
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 30V
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| DMC1028UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 12V; 6A; 1.36W; U-DFN2020-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.36W
Case: U-DFN2020-6
Mounting: SMD
On-state resistance: 17mΩ
Gate charge: 18.5nC
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 12V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 12V; 6A; 1.36W; U-DFN2020-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.36W
Case: U-DFN2020-6
Mounting: SMD
On-state resistance: 17mΩ
Gate charge: 18.5nC
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 12V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMC1029UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.065/0.21Ω
Drain current: 3.7/-2.3A
Kind of channel: enhancement
Drain-source voltage: 12/-12V
Kind of transistor: complementary pair
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.065/0.21Ω
Drain current: 3.7/-2.3A
Kind of channel: enhancement
Drain-source voltage: 12/-12V
Kind of transistor: complementary pair
Gate-source voltage: ±8V
товару немає в наявності
В кошику
од. на суму грн.
| DMC1030UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 34/59mΩ
Gate charge: 23.1/20.8nC
Version: ESD
Drain current: 5.1/-3.9A
Kind of channel: enhancement
Drain-source voltage: 12/-12V
Kind of transistor: complementary pair
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 34/59mΩ
Gate charge: 23.1/20.8nC
Version: ESD
Drain current: 5.1/-3.9A
Kind of channel: enhancement
Drain-source voltage: 12/-12V
Kind of transistor: complementary pair
Gate-source voltage: ±8V
товару немає в наявності
В кошику
од. на суму грн.
| DMN1029UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 65mΩ
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 12V
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.4W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 65mΩ
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 12V
Gate-source voltage: ±8V
товару немає в наявності
В кошику
од. на суму грн.
| DMN2041UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 65mΩ
Pulsed drain current: 20A
Gate charge: 15nC
Drain current: 4.9A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 65mΩ
Pulsed drain current: 20A
Gate charge: 15nC
Drain current: 4.9A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: ±12V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMP1055UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.215Ω
Pulsed drain current: -25A
Gate charge: 20.8nC
Drain current: -4A
Kind of channel: enhancement
Drain-source voltage: -12V
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.89W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.215Ω
Pulsed drain current: -25A
Gate charge: 20.8nC
Drain current: -4A
Kind of channel: enhancement
Drain-source voltage: -12V
Gate-source voltage: ±8V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMP2065UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.74W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.1Ω
Drain current: -3.2A
Kind of channel: enhancement
Drain-source voltage: -20V
Gate-source voltage: ±12V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.74W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.1Ω
Drain current: -3.2A
Kind of channel: enhancement
Drain-source voltage: -20V
Gate-source voltage: ±12V
товару немає в наявності
В кошику
од. на суму грн.
| DMP2110UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DXTN5820DFDB-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Frequency: 80MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Frequency: 80MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DXTN5840CFDB-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 7A
Mounting: SMD
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 7A
Mounting: SMD
Frequency: 150MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DXTP5820CFDB-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 0.69W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6A
Power dissipation: 0.69W
Case: U-DFN2020-3
Pulsed collector current: 8A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| DXTN58100CFDB-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 6A
Mounting: SMD
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.25W
Case: U-DFN2020-3
Pulsed collector current: 6A
Mounting: SMD
Frequency: 150MHz
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Мінімальне замовлення: 3000 шт
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| DMN2053UFDB-7 |
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на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.20 грн |
| DMP2090UFDB-7 |
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.49 грн |
| DMP2165UW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 3.5nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 3.5nC
на замовлення 772 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.70 грн |
| 26+ | 16.68 грн |
| 50+ | 12.11 грн |
| 100+ | 10.67 грн |
| 500+ | 8.30 грн |
| DMN3016LFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.40 грн |
| 12+ | 36.06 грн |
| 14+ | 30.73 грн |
| 30+ | 22.09 грн |
| 2N7002T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| 2N7002TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| ZXTP08400BFFTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
Manufacturer standard package: 3000pcs.
на замовлення 1400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.87 грн |
| 14+ | 30.81 грн |
| 100+ | 21.42 грн |
| 500+ | 16.17 грн |
| 1000+ | 15.91 грн |
| ZTX696BSTZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 70MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 70MHz
на замовлення 1956 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.23 грн |
| 12+ | 38.09 грн |
| 25+ | 34.37 грн |
| 100+ | 29.80 грн |
| 500+ | 27.43 грн |
| 1000+ | 26.07 грн |
| BAS40BRW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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| FZT705TC |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
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| FZT705TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
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| FZT7053TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 100V
Power dissipation: 2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 100V
Power dissipation: 2W
Polarisation: bipolar
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| FZT705QTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Application: automotive industry
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Application: automotive industry
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
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| D5V0L2B3SO-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Capacitance: 20pF
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Capacitance: 20pF
Number of channels: 2
на замовлення 261 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| 43+ | 9.90 грн |
| 49+ | 8.77 грн |
| 54+ | 7.86 грн |
| 100+ | 6.82 грн |
| SMBJ10CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 19.14 грн |
| 28+ | 15.58 грн |
| 31+ | 13.88 грн |
| 100+ | 9.31 грн |
| SMBJ100CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| B160AE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
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| B160AF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA flat
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA flat
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
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| B160B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
на замовлення 5525 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.26 грн |
| 21+ | 20.99 грн |
| 24+ | 17.78 грн |
| 25+ | 16.93 грн |
| 100+ | 16.08 грн |
| 150+ | 15.75 грн |
| 3000+ | 14.64 грн |
| B160S1F-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.65V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8.2mA
Case: SOD123F
Capacitance: 45pF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.65V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8.2mA
Case: SOD123F
Capacitance: 45pF
Type of diode: Schottky rectifying
на замовлення 1900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.67 грн |
| 41+ | 10.50 грн |
| 46+ | 9.31 грн |
| 100+ | 6.23 грн |
| 500+ | 4.74 грн |
| 1000+ | 4.35 грн |
| 74LVC32AS14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
на замовлення 2169 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.17 грн |
| 23+ | 18.96 грн |
| 28+ | 15.32 грн |
| 100+ | 8.21 грн |
| 1000+ | 6.52 грн |
| FMMT417TD |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
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| FMMT415TD |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
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| AP22615BWU-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT26
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT26
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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Мінімальне замовлення: 3000 шт
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| BZX84C6V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 5827 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.29 грн |
| 68+ | 6.26 грн |
| 77+ | 5.50 грн |
| 137+ | 3.11 грн |
| 500+ | 2.13 грн |
| 1000+ | 1.97 грн |
| 1500+ | 1.89 грн |
| 3000+ | 1.79 грн |
| BZX84C6V2TS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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| BZX84C6V2Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BZX84C6V2S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
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| BZX84C6V2W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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| SDM2U40CSP-7B |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: X3-WLB1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.53V
Leakage current: 0.15mA
Max. forward impulse current: 28A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: X3-WLB1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.53V
Leakage current: 0.15mA
Max. forward impulse current: 28A
Kind of package: reel; tape
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Мінімальне замовлення: 10000 шт
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| DFLS230LH-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.45V
Leakage current: 15mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.45V
Leakage current: 15mA
Max. forward impulse current: 75A
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| SDT10A100CTFP |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.66V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Max. load current: 10A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 50µA
Case: TO220FP
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.66V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Max. load current: 10A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 50µA
Case: TO220FP
Type of diode: Schottky rectifying
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.17 грн |
| 18+ | 24.55 грн |
| 50+ | 22.86 грн |
| 100+ | 22.01 грн |
| SDT10A100CT |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.73V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.73V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.38 грн |
| PAM8904EJPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Number of channels: 1
Mounting: SMD
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Number of channels: 1
Mounting: SMD
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| ZTX853 |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Manufacturer standard package: 4000pcs.
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Manufacturer standard package: 4000pcs.
на замовлення 3391 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.10 грн |
| 10+ | 59.68 грн |
| 25+ | 50.62 грн |
| 100+ | 40.04 грн |
| 500+ | 32.93 грн |
| ZTX853STZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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| 1SMB5943B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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| LM2902AQS14-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 100dB; 1mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 100dB; 1mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
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| LM2902AQT14-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2902AS14-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2902AT14-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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Мінімальне замовлення: 2500 шт
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| LM2902QS14-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2902QT14-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 2÷36VDC; TSSOP14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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| LM2902S14-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO14; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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