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DF15005S-T DIODES INCORPORATED DF15005S-DF1510S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
1500+14.58 грн
Мінімальне замовлення: 1500
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AZ23C11-7-F AZ23C11-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 11V
Semiconductor structure: common anode; double
Type of diode: Zener
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
46+9.38 грн
54+7.44 грн
65+6.18 грн
101+3.94 грн
118+3.36 грн
377+2.47 грн
1036+2.34 грн
Мінімальне замовлення: 46
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PAM8303CBSC DIODES INCORPORATED PAM8303C.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2.8...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Number of channels: 1
Output power: 3W
Amplifier class: D
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PAM8303DBYC DIODES INCORPORATED PAM8303D.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2.8...5.5V DC
Integrated circuit features: thermal protection
Kind of package: reel; tape
Number of channels: 1
Output power: 3W
Amplifier class: D
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BAW156T-7-F DIODES INCORPORATED ds30258.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT523
Kind of package: reel; tape
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BAW156Q-7-F BAW156Q-7-F DIODES INCORPORATED ds30231.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
Max. load current: 0.5A
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
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SBRT20M60SP5-7 DIODES INCORPORATED SBRT20M60SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 40µA
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
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SBRT20M60SP5-7D DIODES INCORPORATED SBRT20M60SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 40µA
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
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AZ7033RTR-G1 DIODES INCORPORATED AZ70XX.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 0.8÷18VDC
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: power on reset monitor (PoR)
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
Supply voltage: 0.8...18V DC
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AP2115R5-1.2TRG1 AP2115R5-1.2TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Input voltage: 2.5...6V
Voltage drop: 1.3V
Integrated circuit features: shutdown mode control input
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 1A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Number of channels: 1
Output voltage: 1.2V
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AP2115R5-2.5TRG1 AP2115R5-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Input voltage: 2.5...6V
Voltage drop: 0.75V
Integrated circuit features: shutdown mode control input
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 1A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Number of channels: 1
Output voltage: 2.5V
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AP2115R5A-2.5TRG1 AP2115R5A-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Input voltage: 2.5...6V
Voltage drop: 0.75V
Integrated circuit features: shutdown mode control input
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 1A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Number of channels: 1
Output voltage: 2.5V
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MMBZ5240BTS-7-F DIODES INCORPORATED MMBZ5221-5259BTS.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT363; triple independent
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: triple independent
Power dissipation: 0.2W
Zener voltage: 10V
Case: SOT363
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APX811-29UG-7 DIODES INCORPORATED APX811_812.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Kind of package: reel; tape
Active logical level: low
Mounting: SMD
Integrated circuit features: manual reset
Kind of RESET output: push-pull
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.93V
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TT410-13 DIODES INCORPORATED TT410.pdf Category: Bridge rectifiers - Unclassified
Description: TT410-13
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
1500+25.49 грн
Мінімальне замовлення: 1500
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DMT10H032LDV-13 DIODES INCORPORATED DMT10H032LDV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 75A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 75A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT10H032LDV-7 DIODES INCORPORATED DMT10H032LDV.pdf Category: Unclassified
Description: DMT10H032LDV-7
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+34.70 грн
Мінімальне замовлення: 2000
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74AHC1G00W5-7 74AHC1G00W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02620D3&compId=74AHC1G00.pdf?ci_sign=52e8df188cbc6aafe31b56e76eddfab03810bf75 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74AHC1G00SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02520D3&compId=74AHC1G00.pdf?ci_sign=0dbadd451621537d772998d719c1ec3a81e36664 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
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ZTX450 ZTX450 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5D6FF790F55EA&compId=ZTX450.pdf?ci_sign=8aee8b31a27b5b8262ef8c80def49dee25ff9c38 description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
на замовлення 1412 шт:
термін постачання 21-30 дні (днів)
6+77.59 грн
10+45.05 грн
41+22.88 грн
113+21.61 грн
1000+21.22 грн
Мінімальне замовлення: 6
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ZTX450STZ ZTX450STZ DIODES INCORPORATED ZTX450.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
на замовлення 606 шт:
термін постачання 21-30 дні (днів)
6+80.15 грн
10+51.38 грн
41+23.20 грн
111+21.93 грн
Мінімальне замовлення: 6
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AZ23C6V8-7-F AZ23C6V8-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 6.8V
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DZ23C6V8-7-F DIODES INCORPORATED ds18002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 6.8V
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BZX84B6V8-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 6.8V
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BZX84B6V8Q-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 6.8V
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DMN13H750S-13 DMN13H750S-13 DIODES INCORPORATED DMN13H750S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 130V
Drain current: 1A
Pulsed drain current: 3.3A
Power dissipation: 1.26W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN13H750S-7 DMN13H750S-7 DIODES INCORPORATED DMN13H750S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 130V
Drain current: 1A
Pulsed drain current: 3.3A
Power dissipation: 1.26W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN30H14DLY-13 DIODES INCORPORATED DMN30H14DLY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Case: SOT89
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Gate charge: 4nC
Kind of package: 13 inch reel; tape
Polarisation: unipolar
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DMN30H4D0L-13 DMN30H4D0L-13 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Case: SOT23
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Gate charge: 7.6nC
Kind of package: 13 inch reel; tape
Polarisation: unipolar
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DMN30H4D0L-7 DMN30H4D0L-7 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Case: SOT23
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Gate charge: 7.6nC
Kind of package: 7 inch reel; tape
Polarisation: unipolar
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DMN30H4D0LFDE-13 DIODES INCORPORATED DMN30H4D0LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Case: U-DFN2020-6
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Gate charge: 7.6nC
Kind of package: 13 inch reel; tape
Polarisation: unipolar
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DMN30H4D1S-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Case: SOT223
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
Mounting: SMD
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Kind of channel: enhancement
Kind of package: 13 inch reel; tape
Polarisation: unipolar
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DMN30H4D1S-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Case: SOT223
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
Mounting: SMD
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Kind of channel: enhancement
Kind of package: 7 inch reel; tape
Polarisation: unipolar
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74LVC2T45HK3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E711516ACF40D3&compId=74LVC2T45.pdf?ci_sign=beb43aca81a1a380d3e4067018208ca23bcc7413 Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: X2-DFN1410-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC2T45RA3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E711516AD040D3&compId=74LVC2T45.pdf?ci_sign=deeab09906889681d5f8e5764514967cf6cbcfdc Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: X2-DFN1210-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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DMN601DMK-7 DMN601DMK-7 DIODES INCORPORATED ds30657.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN65D8L-7 DMN65D8L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F9AB3506E3E748&compId=DMN65D8L.pdf?ci_sign=16ad95906b43fca1fbed109ab54fab31c9167927 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1762 шт:
термін постачання 21-30 дні (днів)
56+7.67 грн
73+5.46 грн
113+3.53 грн
136+2.91 грн
500+1.96 грн
551+1.69 грн
1500+1.58 грн
Мінімальне замовлення: 56
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DMN65D8LW-7 DMN65D8LW-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CA3074E96E18BF&compId=DMN65D8LW.pdf?ci_sign=9ccf8b9d5b8ed5f0698352e97d2634bed1586371 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2978 шт:
термін постачання 21-30 дні (днів)
15+29.84 грн
18+22.96 грн
21+19.56 грн
90+10.37 грн
246+9.82 грн
500+9.50 грн
Мінімальне замовлення: 15
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DMN65D8LQ-7 DMN65D8LQ-7 DIODES INCORPORATED DMN65D8LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
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DMN65D8LDW-7 DMN65D8LDW-7 DIODES INCORPORATED DMN65D8LDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
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DMN65D8LDWQ-7 DMN65D8LDWQ-7 DIODES INCORPORATED DMN65D8LDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
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DMN65D8LFB-7 DIODES INCORPORATED DMN65D8LFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.84W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
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DMN65D8LFB-7B DIODES INCORPORATED DMN65D8LFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.84W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
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DMN65D8LQ-13 DMN65D8LQ-13 DIODES INCORPORATED DMN65D8LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
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KBP08G DIODES INCORPORATED ds21203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DT1042-04SO-7 DIODES INCORPORATED DT1042-04SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)
3000+4.60 грн
Мінімальне замовлення: 3000
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DMTH6004SCTB-13 DIODES INCORPORATED DMTH6004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 95.4nC
On-state resistance: 3.4mΩ
Power dissipation: 4.7W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Kind of channel: enhancement
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DMTH6004SCTBQ-13 DIODES INCORPORATED DMTH6004SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 95.4nC
On-state resistance: 3.4mΩ
Power dissipation: 4.7W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Application: automotive industry
Kind of channel: enhancement
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DMTH4002SCTB-13 DIODES INCORPORATED DMTH4002SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
800+71.62 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
DMTH4002SCTBQ-13 DIODES INCORPORATED DMTH4002SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
800+90.38 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PAM8615RHR DIODES INCORPORATED PAM8615.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 32W; thermal protection; Ch: 2; 10÷26VDC
Type of integrated circuit: audio amplifier
Output power: 32W
Integrated circuit features: thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: TSSOP24EP
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 10...26V DC
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1SMB5936B-13 1SMB5936B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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MBR20150SCTF-G1 DIODES INCORPORATED MBR20150SC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 20mA
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1SMB5954B-13 1SMB5954B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 160V; SMD; reel,tape; SMB; single diode; 1uA
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 160V
Kind of package: reel; tape
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B320AE-13 B320AE-13 DIODES INCORPORATED B340AE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 3A; reel,tape
Mounting: SMD
Capacitance: 140pF
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 80A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Leakage current: 0.2mA
Max. forward voltage: 0.5V
на замовлення 3458 шт:
термін постачання 21-30 дні (днів)
25+17.05 грн
28+14.41 грн
30+13.54 грн
33+12.11 грн
100+10.05 грн
114+8.15 грн
314+7.68 грн
1000+7.44 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
B320AF-13 DIODES INCORPORATED B320AF-B330AF.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 20V; 3A; reel,tape
Mounting: SMD
Capacitance: 140pF
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 80A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA flat
Type of diode: Schottky rectifying
Leakage current: 12mA
Max. forward voltage: 0.5V
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B330AF-13 DIODES INCORPORATED B320AF-B330AF.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 30V; 3A; reel,tape
Mounting: SMD
Capacitance: 140pF
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA flat
Type of diode: Schottky rectifying
Leakage current: 14mA
Max. forward voltage: 0.5V
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DMT6012LFV-7 DIODES INCORPORATED DMT6012LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 15mΩ
Power dissipation: 1.95W
Drain current: 34.7A
Gate-source voltage: ±20V
Pulsed drain current: 170A
Drain-source voltage: 60V
Kind of channel: enhancement
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AP7217-33SG-13 AP7217-33SG-13 DIODES INCORPORATED AP7217.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.5A
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 3.3...5.5V
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MMBZ5242BQ-7-F MMBZ5242BQ-7-F DIODES INCORPORATED MMBZ5221B-MMBZ5259B.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 12V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5%
Zener voltage: 12V
Kind of package: reel; tape
Case: SOT23
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
54+8.01 грн
80+4.99 грн
105+3.80 грн
159+2.49 грн
488+1.91 грн
500+1.73 грн
Мінімальне замовлення: 54
В кошику  од. на суму  грн.
DF15005S-T DF15005S-DF1510S.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1500+14.58 грн
Мінімальне замовлення: 1500
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AZ23C11-7-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8
AZ23C11-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 11V
Semiconductor structure: common anode; double
Type of diode: Zener
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.38 грн
54+7.44 грн
65+6.18 грн
101+3.94 грн
118+3.36 грн
377+2.47 грн
1036+2.34 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
PAM8303CBSC PAM8303C.pdf
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2.8...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Number of channels: 1
Output power: 3W
Amplifier class: D
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PAM8303DBYC PAM8303D.pdf
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2.8...5.5V DC
Integrated circuit features: thermal protection
Kind of package: reel; tape
Number of channels: 1
Output power: 3W
Amplifier class: D
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BAW156T-7-F ds30258.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT523
Kind of package: reel; tape
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BAW156Q-7-F ds30231.pdf
BAW156Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
Max. load current: 0.5A
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
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SBRT20M60SP5-7 SBRT20M60SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 40µA
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
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SBRT20M60SP5-7D SBRT20M60SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 40µA
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
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AZ7033RTR-G1 AZ70XX.pdf
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 0.8÷18VDC
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: power on reset monitor (PoR)
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
Supply voltage: 0.8...18V DC
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AP2115R5-1.2TRG1 AP2115.pdf
AP2115R5-1.2TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Input voltage: 2.5...6V
Voltage drop: 1.3V
Integrated circuit features: shutdown mode control input
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 1A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Number of channels: 1
Output voltage: 1.2V
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AP2115R5-2.5TRG1 AP2115.pdf
AP2115R5-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Input voltage: 2.5...6V
Voltage drop: 0.75V
Integrated circuit features: shutdown mode control input
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 1A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Number of channels: 1
Output voltage: 2.5V
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AP2115R5A-2.5TRG1 AP2115.pdf
AP2115R5A-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Input voltage: 2.5...6V
Voltage drop: 0.75V
Integrated circuit features: shutdown mode control input
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 1A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Number of channels: 1
Output voltage: 2.5V
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MMBZ5240BTS-7-F MMBZ5221-5259BTS.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT363; triple independent
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: triple independent
Power dissipation: 0.2W
Zener voltage: 10V
Case: SOT363
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APX811-29UG-7 APX811_812.pdf
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Kind of package: reel; tape
Active logical level: low
Mounting: SMD
Integrated circuit features: manual reset
Kind of RESET output: push-pull
Kind of integrated circuit: power on reset monitor (PoR)
Case: SOT143
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.93V
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TT410-13 TT410.pdf
Виробник: DIODES INCORPORATED
Category: Bridge rectifiers - Unclassified
Description: TT410-13
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1500+25.49 грн
Мінімальне замовлення: 1500
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DMT10H032LDV-13 DMT10H032LDV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 75A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 75A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMT10H032LDV-7 DMT10H032LDV.pdf
Виробник: DIODES INCORPORATED
Category: Unclassified
Description: DMT10H032LDV-7
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+34.70 грн
Мінімальне замовлення: 2000
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74AHC1G00W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02620D3&compId=74AHC1G00.pdf?ci_sign=52e8df188cbc6aafe31b56e76eddfab03810bf75
74AHC1G00W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74AHC1G00SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02520D3&compId=74AHC1G00.pdf?ci_sign=0dbadd451621537d772998d719c1ec3a81e36664
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
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ZTX450 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5D6FF790F55EA&compId=ZTX450.pdf?ci_sign=8aee8b31a27b5b8262ef8c80def49dee25ff9c38
ZTX450
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
на замовлення 1412 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+77.59 грн
10+45.05 грн
41+22.88 грн
113+21.61 грн
1000+21.22 грн
Мінімальне замовлення: 6
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ZTX450STZ ZTX450.pdf
ZTX450STZ
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
на замовлення 606 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+80.15 грн
10+51.38 грн
41+23.20 грн
111+21.93 грн
Мінімальне замовлення: 6
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AZ23C6V8-7-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8
AZ23C6V8-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 6.8V
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DZ23C6V8-7-F ds18002.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Type of diode: Zener
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 6.8V
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BZX84B6V8-7-F BZX84Bxxx.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 6.8V
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BZX84B6V8Q-7-F BZX84Bxxx.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 6.8V
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DMN13H750S-13 DMN13H750S.pdf
DMN13H750S-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 130V
Drain current: 1A
Pulsed drain current: 3.3A
Power dissipation: 1.26W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN13H750S-7 DMN13H750S.pdf
DMN13H750S-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 130V; 1A; Idm: 3.3A; 1.26W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 130V
Drain current: 1A
Pulsed drain current: 3.3A
Power dissipation: 1.26W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN30H14DLY-13 DMN30H14DLY.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Case: SOT89
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Gate charge: 4nC
Kind of package: 13 inch reel; tape
Polarisation: unipolar
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DMN30H4D0L-13 DMN30H4D0L.pdf
DMN30H4D0L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Case: SOT23
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Gate charge: 7.6nC
Kind of package: 13 inch reel; tape
Polarisation: unipolar
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DMN30H4D0L-7 DMN30H4D0L.pdf
DMN30H4D0L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Case: SOT23
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Gate charge: 7.6nC
Kind of package: 7 inch reel; tape
Polarisation: unipolar
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DMN30H4D0LFDE-13 DMN30H4D0LFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Case: U-DFN2020-6
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 300V
Kind of channel: enhancement
Gate charge: 7.6nC
Kind of package: 13 inch reel; tape
Polarisation: unipolar
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DMN30H4D1S-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Case: SOT223
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
Mounting: SMD
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Kind of channel: enhancement
Kind of package: 13 inch reel; tape
Polarisation: unipolar
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DMN30H4D1S-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Case: SOT223
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
Mounting: SMD
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Kind of channel: enhancement
Kind of package: 7 inch reel; tape
Polarisation: unipolar
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74LVC2T45HK3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E711516ACF40D3&compId=74LVC2T45.pdf?ci_sign=beb43aca81a1a380d3e4067018208ca23bcc7413
Виробник: DIODES INCORPORATED
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: X2-DFN1410-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC2T45RA3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E711516AD040D3&compId=74LVC2T45.pdf?ci_sign=deeab09906889681d5f8e5764514967cf6cbcfdc
Виробник: DIODES INCORPORATED
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: X2-DFN1210-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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DMN601DMK-7 ds30657.pdf
DMN601DMK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN65D8L-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F9AB3506E3E748&compId=DMN65D8L.pdf?ci_sign=16ad95906b43fca1fbed109ab54fab31c9167927
DMN65D8L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1762 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.67 грн
73+5.46 грн
113+3.53 грн
136+2.91 грн
500+1.96 грн
551+1.69 грн
1500+1.58 грн
Мінімальне замовлення: 56
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DMN65D8LW-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986CA3074E96E18BF&compId=DMN65D8LW.pdf?ci_sign=9ccf8b9d5b8ed5f0698352e97d2634bed1586371
DMN65D8LW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2978 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.84 грн
18+22.96 грн
21+19.56 грн
90+10.37 грн
246+9.82 грн
500+9.50 грн
Мінімальне замовлення: 15
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DMN65D8LQ-7 DMN65D8LQ.pdf
DMN65D8LQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
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DMN65D8LDW-7 DMN65D8LDW.pdf
DMN65D8LDW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160mA; Idm: 0.8A; 400mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
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DMN65D8LDWQ-7 DMN65D8LDWQ.pdf
DMN65D8LDWQ-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.4W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
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DMN65D8LFB-7 DMN65D8LFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.84W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
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DMN65D8LFB-7B DMN65D8LFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 840mW; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.84W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
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DMN65D8LQ-13 DMN65D8LQ.pdf
DMN65D8LQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 870pC
Pulsed drain current: 0.8A
Application: automotive industry
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KBP08G ds21203.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DT1042-04SO-7 DT1042-04SO.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+4.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMTH6004SCTB-13 DMTH6004SCTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 95.4nC
On-state resistance: 3.4mΩ
Power dissipation: 4.7W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Kind of channel: enhancement
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DMTH6004SCTBQ-13 DMTH6004SCTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 95.4nC
On-state resistance: 3.4mΩ
Power dissipation: 4.7W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Application: automotive industry
Kind of channel: enhancement
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DMTH4002SCTB-13 DMTH4002SCTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
800+71.62 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
DMTH4002SCTBQ-13 DMTH4002SCTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
800+90.38 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PAM8615RHR PAM8615.pdf
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 32W; thermal protection; Ch: 2; 10÷26VDC
Type of integrated circuit: audio amplifier
Output power: 32W
Integrated circuit features: thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: TSSOP24EP
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 10...26V DC
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1SMB5936B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5936B-13
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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MBR20150SCTF-G1 MBR20150SC.pdf
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 20mA
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1SMB5954B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5954B-13
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 160V; SMD; reel,tape; SMB; single diode; 1uA
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 1µA
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 160V
Kind of package: reel; tape
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B320AE-13 B340AE.pdf
B320AE-13
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 3A; reel,tape
Mounting: SMD
Capacitance: 140pF
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 80A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Leakage current: 0.2mA
Max. forward voltage: 0.5V
на замовлення 3458 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.05 грн
28+14.41 грн
30+13.54 грн
33+12.11 грн
100+10.05 грн
114+8.15 грн
314+7.68 грн
1000+7.44 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
B320AF-13 B320AF-B330AF.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 20V; 3A; reel,tape
Mounting: SMD
Capacitance: 140pF
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 80A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA flat
Type of diode: Schottky rectifying
Leakage current: 12mA
Max. forward voltage: 0.5V
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B330AF-13 B320AF-B330AF.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 30V; 3A; reel,tape
Mounting: SMD
Capacitance: 140pF
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA flat
Type of diode: Schottky rectifying
Leakage current: 14mA
Max. forward voltage: 0.5V
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DMT6012LFV-7 DMT6012LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 15mΩ
Power dissipation: 1.95W
Drain current: 34.7A
Gate-source voltage: ±20V
Pulsed drain current: 170A
Drain-source voltage: 60V
Kind of channel: enhancement
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AP7217-33SG-13 AP7217.pdf
AP7217-33SG-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.5A
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 3.3...5.5V
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MMBZ5242BQ-7-F MMBZ5221B-MMBZ5259B.pdf
MMBZ5242BQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 12V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5%
Zener voltage: 12V
Kind of package: reel; tape
Case: SOT23
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
54+8.01 грн
80+4.99 грн
105+3.80 грн
159+2.49 грн
488+1.91 грн
500+1.73 грн
Мінімальне замовлення: 54
В кошику  од. на суму  грн.
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