Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74087) > Сторінка 1223 з 1235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| AL9902FDF-13 | DIODES INCORPORATED |
 Category: LED driversDescription: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90% Mounting: SMD Case: U-DFN6040-12 Kind of package: reel; tape Operating temperature: -40...105°C Efficiency: 90% Kind of integrated circuit: LED driver Number of channels: 1 Operating voltage: 20...500V DC Output current: 0.4A Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMP1009UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 44nC Polarisation: unipolar Drain current: -12A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 30mΩ Pulsed drain current: -70A Power dissipation: 2W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMP3026SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 19.6nC Polarisation: unipolar Drain current: -8.3A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 54mΩ Pulsed drain current: -50A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMN2011UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Power dissipation: 1.3W Gate charge: 56nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMT3020LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD Pulsed drain current: 40A Power dissipation: 1.1W Gate charge: 7nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMP1005UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 47nC Polarisation: unipolar Drain current: -10.3A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 18.5mΩ Pulsed drain current: -70A Power dissipation: 2.1W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMP2040UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 19nC Polarisation: unipolar Drain current: -4.9A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Power dissipation: 1.8W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMP6110SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 17.2nC Polarisation: unipolar Drain current: -3.4A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.13Ω Pulsed drain current: -20A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMN3021LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 14nC Polarisation: unipolar Drain current: 9.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 20mΩ Pulsed drain current: 50A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMN1004UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Polarisation: unipolar Drain-source voltage: 12V Type of transistor: N-MOSFET On-state resistance: 4.8mΩ Power dissipation: 2.1W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMN1008UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 23.4nC Polarisation: unipolar Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 12.5mΩ Pulsed drain current: 60A Power dissipation: 1W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMN2024UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 14.8nC Polarisation: unipolar Drain current: 5.6A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±10V On-state resistance: 50mΩ Pulsed drain current: 40A Power dissipation: 1.67W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMN2028UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 18nC Polarisation: unipolar Drain current: 7.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 95mΩ Pulsed drain current: 40A Power dissipation: 1.31W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMN3020UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.3A Pulsed drain current: 40A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 27nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMP1012UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 31nC Polarisation: unipolar Drain current: -12.6A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 40mΩ Pulsed drain current: -55A Power dissipation: 1.36W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMP1022UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Pulsed drain current: -90A Power dissipation: 1.3W Gate charge: 48.3nC Polarisation: unipolar Drain current: -8.8A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMP2021UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 59nC Polarisation: unipolar Drain current: -8.9A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 80mΩ Pulsed drain current: -60A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMP2023UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 27nC Polarisation: unipolar Drain current: -7.6A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 90mΩ Pulsed drain current: -40A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMP6250SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Type of transistor: P-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMT3006LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 16.7nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| P4SMAJ10ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Max. forward impulse current: 23.5A Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMN2011UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Power dissipation: 1.3W Gate charge: 56nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMN2011UFX-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Gate charge: 56nC Polarisation: unipolar Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: V-DFN2050-4 On-state resistance: 13mΩ Pulsed drain current: 80A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMN2011UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Mounting: SMD Power dissipation: 1.27W Gate charge: 84nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
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DGTD120T25S1PT | DIODES INCORPORATED |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Type of transistor: IGBT Turn-on time: 110ns Kind of package: tube Case: TO247-3 Turn-off time: 367ns Gate-emitter voltage: ±20V Collector current: 25A Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 174W Gate charge: 204nC Pulsed collector current: 100A |
товару немає в наявності |
В кошику од. на суму грн. |
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LM4040D50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
товару немає в наявності |
В кошику од. на суму грн. |
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LM4040B50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
товару немає в наявності |
В кошику од. на суму грн. |
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LM4040C50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
товару немає в наявності |
В кошику од. на суму грн. |
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LM4040B50QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
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LM4040C50QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
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DMT3020LSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SO8 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A Power dissipation: 1.5W Gate charge: 7nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| DMT3009LDT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Polarisation: unipolar Drain current: 11A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: 7 inch reel; tape Case: V-DFN3030-8 On-state resistance: 22mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 1.2W Gate charge: 20nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3020LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3006LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 16.7nC |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3006LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 11mΩ Mounting: SMD Pulsed drain current: 90A Power dissipation: 2W Gate charge: 16.7nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3020LDV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Polarisation: unipolar Drain current: 25A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A Power dissipation: 1.9W Gate charge: 7nC |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDBQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3020LFDFQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Polarisation: unipolar Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD Pulsed drain current: 40A Power dissipation: 0.4W Gate charge: 7nC |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3003LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 5.5mΩ Mounting: SMD Pulsed drain current: 100A Power dissipation: 2.4W Gate charge: 44nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3003LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 5.5mΩ Mounting: SMD Pulsed drain current: 100A Power dissipation: 2.4W Gate charge: 44nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DMT3003LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 5.5mΩ Mounting: SMD Pulsed drain current: 100A Power dissipation: 2.4W Gate charge: 44nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DMT3004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Polarisation: unipolar Drain current: 17A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 6mΩ Mounting: SMD Pulsed drain current: 180A Power dissipation: 2.7W Gate charge: 43.7nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| DMT3006LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 16.7nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3006LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Polarisation: unipolar Drain current: 12.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 10mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 27.8W Gate charge: 16.7nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3006LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Polarisation: unipolar Drain current: 12.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 10mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 27.8W Gate charge: 16.7nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DMT3006LFVQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 11mΩ Mounting: SMD Pulsed drain current: 90A Power dissipation: 2W Gate charge: 16.7nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3006LPB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Polarisation: unipolar Drain current: 9/11A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 14mΩ Mounting: SMD Pulsed drain current: 80...100A Power dissipation: 1.7W Gate charge: 12.6nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| DMT3008LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6 Polarisation: unipolar Drain-source voltage: 30V Type of transistor: N-MOSFET Case: DFN2020-6 On-state resistance: 10mΩ Mounting: SMD Power dissipation: 2.1W Gate charge: 5.8nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3009LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 20mΩ Mounting: SMD Pulsed drain current: 90A Power dissipation: 2.3W Gate charge: 12nC |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3009LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 20mΩ Mounting: SMD Pulsed drain current: 90A Power dissipation: 2.3W Gate charge: 12nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3009LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI®3333-8 On-state resistance: 20mΩ Mounting: SMD Pulsed drain current: 90A Power dissipation: 2.3W Gate charge: 12nC |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMT3020LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMT3020LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD Pulsed drain current: 40A Power dissipation: 1.1W Gate charge: 7nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3020LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD Pulsed drain current: 40A Power dissipation: 1.1W Gate charge: 7nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMT3020UFDB-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Polarisation: unipolar Drain current: 5.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 30mΩ Mounting: SMD Pulsed drain current: 35A Power dissipation: 1.3W Gate charge: 8.8nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMT30M9LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 1.6mΩ Mounting: SMD Pulsed drain current: 400A Power dissipation: 2.6W Gate charge: 160.5nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
|
|
LM4041DQFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA Type of integrated circuit: voltage reference source Reference voltage: 1.225V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 12mA |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SMCJ75A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| LM2904AS-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. |
| AL9902FDF-13 |
|
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 20...500V DC
Output current: 0.4A
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 20...500V DC
Output current: 0.4A
Type of integrated circuit: driver
товару немає в наявності
В кошику
од. на суму грн.
| DMP1009UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 44nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Pulsed drain current: -70A
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 44nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Pulsed drain current: -70A
Power dissipation: 2W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMP3026SFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Pulsed drain current: -50A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Pulsed drain current: -50A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN2011UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMT3020LFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMP1005UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 47nC
Polarisation: unipolar
Drain current: -10.3A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Pulsed drain current: -70A
Power dissipation: 2.1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 47nC
Polarisation: unipolar
Drain current: -10.3A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Pulsed drain current: -70A
Power dissipation: 2.1W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMP2040UFDF-13 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19nC
Polarisation: unipolar
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Power dissipation: 1.8W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19nC
Polarisation: unipolar
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Power dissipation: 1.8W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMP6110SFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -20A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -20A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN3021LFDF-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Pulsed drain current: 50A
Power dissipation: 1.3W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Pulsed drain current: 50A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN1004UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Power dissipation: 2.1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Power dissipation: 2.1W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN1008UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 23.4nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Pulsed drain current: 60A
Power dissipation: 1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 23.4nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Pulsed drain current: 60A
Power dissipation: 1W
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| DMN2024UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Pulsed drain current: 40A
Power dissipation: 1.67W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Pulsed drain current: 40A
Power dissipation: 1.67W
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| DMN2028UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Pulsed drain current: 40A
Power dissipation: 1.31W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Pulsed drain current: 40A
Power dissipation: 1.31W
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Мінімальне замовлення: 10000 шт
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| DMN3020UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 10000 шт
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| DMP1012UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Pulsed drain current: -55A
Power dissipation: 1.36W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Pulsed drain current: -55A
Power dissipation: 1.36W
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Мінімальне замовлення: 10000 шт
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| DMP1022UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
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Мінімальне замовлення: 10000 шт
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| DMP2021UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
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Мінімальне замовлення: 10000 шт
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| DMP2023UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Pulsed drain current: -40A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Pulsed drain current: -40A
Power dissipation: 1.3W
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Мінімальне замовлення: 10000 шт
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од. на суму грн.
| DMP6250SFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
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Мінімальне замовлення: 10000 шт
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| DMT3006LFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
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Мінімальне замовлення: 10000 шт
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| P4SMAJ10ADF-13 |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 23.5A
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 23.5A
Features of semiconductor devices: glass passivated
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| DMN2011UFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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| DMN2011UFX-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
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Мінімальне замовлення: 3000 шт
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| DMN2011UFDE-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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Мінімальне замовлення: 3000 шт
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| DGTD120T25S1PT |
|
Виробник: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
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| LM4040D50FTA |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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| LM4040B50FTA |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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| LM4040C50FTA |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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| LM4040B50QFTA |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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| LM4040C50QFTA |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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| DMT3020LSDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
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Мінімальне замовлення: 2500 шт
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| DMT3009LDT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
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Мінімальне замовлення: 3000 шт
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| DMT3020LFDB-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
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Мінімальне замовлення: 3000 шт
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| DMT3006LFDFQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
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| DMT3006LFV-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3020LDV-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
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В кошику
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| DMT3020LFDBQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3020LFDFQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 0.4W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 0.4W
Gate charge: 7nC
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В кошику
од. на суму грн.
| DMT3003LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3003LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMT3003LFGQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
Gate charge: 44nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMT3004LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
Pulsed drain current: 180A
Power dissipation: 2.7W
Gate charge: 43.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
Pulsed drain current: 180A
Power dissipation: 2.7W
Gate charge: 43.7nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT3006LFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3006LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3006LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
Gate charge: 16.7nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMT3006LFVQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3006LPB-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 80...100A
Power dissipation: 1.7W
Gate charge: 12.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 80...100A
Power dissipation: 1.7W
Gate charge: 12.6nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT3008LFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 5.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 5.8nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3009LFVW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
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В кошику
од. на суму грн.
| DMT3009LFVWQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3009LFVWQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.3W
Gate charge: 12nC
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В кошику
од. на суму грн.
| DMT3020LFDB-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMT3020LFDBQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMT3020LFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| DMT3020LFDFQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3020UFDB-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
Pulsed drain current: 35A
Power dissipation: 1.3W
Gate charge: 8.8nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
Pulsed drain current: 35A
Power dissipation: 1.3W
Gate charge: 8.8nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMT30M9LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 2.6W
Gate charge: 160.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 2.6W
Gate charge: 160.5nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| LM4041DQFTA |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.225V; ±1%; SOT23; reel,tape; 12mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.225V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 12mA
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| SMCJ75A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 12.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| LM2904AS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
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