Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74722) > Сторінка 1223 з 1246
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ZXTN25100DFHTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2.5A Power dissipation: 1.81W Case: SOT23 Current gain: 20...900 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 175MHz |
на замовлення 381 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
SMAZ18-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Zener current: 56mA |
на замовлення 4205 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| AP2553FDC-7R | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN2020-6 Type C On-state resistance: 80mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DXT3904-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.2W Case: SOT89 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 2500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ZXTP25100CFHTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 1A; 1.81W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: SOT23 Current gain: 20...500 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 180MHz Power dissipation: 1.81W Pulsed collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
ZXTP25100CZTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 1A; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: SOT89 Current gain: 20...500 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ZXTP25100CFHQTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
| MMBTA06Q-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Pulsed collector current: 1A Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMAJ51AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
1SMB5931B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DT1446-04V-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 4.7A; SOT563; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 4.7A Mounting: SMD Case: SOT563 Max. off-state voltage: 5.5V Leakage current: 5µA Number of channels: 4 Kind of package: reel; tape Capacitance: 0.65pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
BZT52C12LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 12V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 12V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
на замовлення 2714 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
BZT52C12Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
на замовлення 2440 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
ZXTP2025FTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 5A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Case: SOT23 Current gain: 12...560 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 190MHz |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
ZXTP25020CFHTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 4A; 1.81W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4A Power dissipation: 1.81W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 285MHz Current gain: 40...500 |
на замовлення 266 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
ZXTP2029FTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 1.2W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 1.2W Case: SOT23 Pulsed collector current: 5A Current gain: 40...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 2157 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() +1 |
DSS5240T-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.73W Collector current: 2A Collector-emitter voltage: 40V Quantity in set/package: 3000pcs. Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
ZXMS6004FFQTA | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT23F On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Control voltage: 60V DC |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
SMAJ90CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 2.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
APX803L20-34SA-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: power on reset monitor (PoR) Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C DC supply current: 1µA Maximum output current: 20mA Delay time: 220ms Supply voltage: 0.9...5.5V DC Threshold on-voltage: 3.4V Integrated circuit features: ±1,5% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DFLS240-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape Case: PowerDI®123 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Capacitance: 28pF Leakage current: 6mA Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DFLS240LQ-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; 12ns; 1.67W Application: automotive industry Case: PowerDI®123 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Capacitance: 90pF Reverse recovery time: 12ns Leakage current: 10mA Max. forward voltage: 0.65V Power dissipation: 1.67W Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DFLS240Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape Application: automotive industry Case: PowerDI®123 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Capacitance: 28pF Leakage current: 6mA Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AP7345D-3333RH4-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; X2DFN8; SMD Case: X2DFN8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Output current: 0.3A Voltage drop: 0.29V Number of channels: 2 Tolerance: ±1.5% Input voltage: 1.7...5.25V Output voltage: 3.3V; 3.3/3.3V DC Manufacturer series: AP7345 Kind of voltage regulator: fixed; LDO; linear Integrated circuit features: output discharge; shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DDTA143ZCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74AHCT1G08QSE-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74AHCT1G08QW5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
74AHCT1G08W5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: totem pole Kind of input: with Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BZT52C51S-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode Tolerance: ±6% Power dissipation: 0.2W Zener voltage: 51V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ZXMN4A06GTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 484 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| ZXTN25060BFHTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 27000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
|
BAS40LP-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 40V; 0.8A Type of diode: Schottky rectifying Case: X1-DFN1006-2 Mounting: SMD Max. off-state voltage: 40V Load current: 0.8A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
BCX5216QTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Pulsed collector current: 2A Quantity in set/package: 1000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BCX5216TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BCX5216TC | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 4000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
BSR43TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89 Quantity in set/package: 1000pcs. Frequency: 100MHz Polarisation: bipolar Type of transistor: NPN Kind of package: reel; tape Case: SOT89 Mounting: SMD Collector current: 1A Power dissipation: 1W Current gain: 30...300 Collector-emitter voltage: 80V |
на замовлення 1552 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
DMP45H4D9HJ3 | DIODES INCORPORATED |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Drain current: -3A Pulsed drain current: -22.4A Power dissipation: 41W Case: TO251 Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 13.7nC |
на замовлення 212 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
ZXMN6A11DN8TA | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 2.6A; 1.25W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
DMN63D8LV-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.26A Power dissipation: 0.45W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1295 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
DMN62D0UDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1850 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
DMN53D0LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.25A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 895 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
DMN63D8LDWQ-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.26A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
на замовлення 4575 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
DMN3190LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Pulsed drain current: 9.6A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 413 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
DDC123JU-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ Type of transistor: NPN x2 Kind of package: reel; tape Case: SOT363 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 100...600 Base resistor: 2.2kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT Mounting: SMD |
на замовлення 2549 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| DMN2450UFD-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Pulsed drain current: 3A Power dissipation: 0.89W Case: X1-DFN1212-3 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 0.7nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMN2450UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Pulsed drain current: 3A Power dissipation: 0.9W Case: X2-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 1.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMN2450UFB4-7R | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Pulsed drain current: 3A Power dissipation: 0.9W Case: X2-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 1.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMN2451UFB4Q-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 3A; 1.1W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.3A Pulsed drain current: 3A Power dissipation: 1.1W Case: X2-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 6.4nC Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMN2451UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
| DMN2451UFDQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 57000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
| 74AHC1G07QSE-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital Type of integrated circuit: digital |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
|
DMP6110SVTQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: 7 inch reel; tape Application: automotive industry Drain current: -6.5A On-state resistance: 0.13Ω Power dissipation: 1.2W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V |
на замовлення 1323 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| RS1G-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1GB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1DB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
GBU1010 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DMN2501UFB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW Case: X2-DFN1006-3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 2nC On-state resistance: 0.7Ω Power dissipation: 0.7W Drain current: 1.4A Pulsed drain current: 6A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMN2250UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW Case: X1-DFN1006-3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 3.1nC On-state resistance: 0.25Ω Power dissipation: 0.3W Drain current: 1.03A Pulsed drain current: 6A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ZXTP2012ASTZ | DIODES INCORPORATED |
Category: PNP THT transistorsDescription: Transistor: PNP; unipolar; 60V; 3.5A; 1W; TO92 Type of transistor: PNP Polarisation: unipolar Collector-emitter voltage: 60V Collector current: 3.5A Power dissipation: 1W Case: TO92 Pulsed collector current: 15A Current gain: 10...300 Mounting: THT Quantity in set/package: 2000pcs. Frequency: 120MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FMMT718TC | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
| ZXTN25100DFHTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2.5A
Power dissipation: 1.81W
Case: SOT23
Current gain: 20...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 175MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2.5A
Power dissipation: 1.81W
Case: SOT23
Current gain: 20...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 175MHz
на замовлення 381 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.84 грн |
| 10+ | 41.72 грн |
| 25+ | 32.93 грн |
| 46+ | 20.78 грн |
| 125+ | 19.66 грн |
| 250+ | 18.86 грн |
| SMAZ18-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Zener current: 56mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Zener current: 56mA
на замовлення 4205 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.66 грн |
| 30+ | 13.75 грн |
| 50+ | 10.07 грн |
| 100+ | 8.79 грн |
| 250+ | 7.43 грн |
| 500+ | 6.55 грн |
| 1000+ | 5.75 грн |
| AP2553FDC-7R |
![]() |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
товару немає в наявності
В кошику
од. на суму грн.
| DXT3904-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
товару немає в наявності
В кошику
од. на суму грн.
| ZXTP25100CFHTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1.81W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.81W
Pulsed collector current: 3A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1.81W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.81W
Pulsed collector current: 3A
товару немає в наявності
В кошику
од. на суму грн.
| ZXTP25100CZTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
товару немає в наявності
В кошику
од. на суму грн.
| ZXTP25100CFHQTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.75 грн |
| MMBTA06Q-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ51AQ-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5931B-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| DT1446-04V-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4.7A; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 4.7A
Mounting: SMD
Case: SOT563
Max. off-state voltage: 5.5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4.7A; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 4.7A
Mounting: SMD
Case: SOT563
Max. off-state voltage: 5.5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C12LP-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 2714 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.82 грн |
| 23+ | 18.06 грн |
| 30+ | 13.75 грн |
| 100+ | 8.31 грн |
| 500+ | 5.36 грн |
| BZT52C12Q-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
на замовлення 2440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.61 грн |
| 70+ | 5.75 грн |
| 79+ | 5.08 грн |
| 110+ | 3.64 грн |
| 500+ | 2.60 грн |
| 1000+ | 2.41 грн |
| ZXTP2025FTA | ![]() |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Case: SOT23
Current gain: 12...560
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 190MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Case: SOT23
Current gain: 12...560
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 190MHz
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.14 грн |
| 10+ | 46.28 грн |
| 32+ | 29.73 грн |
| ZXTP25020CFHTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4A; 1.81W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 1.81W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 285MHz
Current gain: 40...500
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4A; 1.81W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 1.81W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 285MHz
Current gain: 40...500
на замовлення 266 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.53 грн |
| 12+ | 33.81 грн |
| 100+ | 21.98 грн |
| ZXTP2029FTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT23
Pulsed collector current: 5A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1.2W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT23
Pulsed collector current: 5A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 2157 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.75 грн |
| 10+ | 44.44 грн |
| 100+ | 29.65 грн |
| 250+ | 25.66 грн |
| 500+ | 23.18 грн |
| 1000+ | 21.26 грн |
| DSS5240T-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.73W
Collector current: 2A
Collector-emitter voltage: 40V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 730mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.73W
Collector current: 2A
Collector-emitter voltage: 40V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.54 грн |
| 22+ | 18.46 грн |
| 100+ | 10.53 грн |
| 500+ | 7.15 грн |
| 1000+ | 6.06 грн |
| 3000+ | 4.84 грн |
| ZXMS6004FFQTA |
![]() |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.19 грн |
| 10+ | 55.55 грн |
| 25+ | 46.28 грн |
| 50+ | 40.12 грн |
| 100+ | 34.93 грн |
| 250+ | 29.57 грн |
| 500+ | 26.70 грн |
| SMAJ90CA-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| APX803L20-34SA-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.4V
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 220ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.4V
Integrated circuit features: ±1,5% accuracy
товару немає в наявності
В кошику
од. на суму грн.
| DFLS240-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 28pF
Leakage current: 6mA
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 28pF
Leakage current: 6mA
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
| DFLS240LQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; 12ns; 1.67W
Application: automotive industry
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 90pF
Reverse recovery time: 12ns
Leakage current: 10mA
Max. forward voltage: 0.65V
Power dissipation: 1.67W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; 12ns; 1.67W
Application: automotive industry
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 90pF
Reverse recovery time: 12ns
Leakage current: 10mA
Max. forward voltage: 0.65V
Power dissipation: 1.67W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
| DFLS240Q-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 28pF
Leakage current: 6mA
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 28pF
Leakage current: 6mA
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
| AP7345D-3333RH4-7 |
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; X2DFN8; SMD
Case: X2DFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.29V
Number of channels: 2
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 3.3V; 3.3/3.3V DC
Manufacturer series: AP7345
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: output discharge; shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; X2DFN8; SMD
Case: X2DFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.29V
Number of channels: 2
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 3.3V; 3.3/3.3V DC
Manufacturer series: AP7345
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: output discharge; shutdown mode control input
товару немає в наявності
В кошику
од. на суму грн.
| DDTA143ZCA-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| 74AHCT1G08QSE-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
товару немає в наявності
В кошику
од. на суму грн.
| 74AHCT1G08QW5-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
товару немає в наявності
В кошику
од. на суму грн.
| 74AHCT1G08W5-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: totem pole
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: totem pole
Kind of input: with Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C51S-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Tolerance: ±6%
Power dissipation: 0.2W
Zener voltage: 51V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Tolerance: ±6%
Power dissipation: 0.2W
Zener voltage: 51V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
товару немає в наявності
В кошику
од. на суму грн.
| ZXMN4A06GTA |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 484 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.70 грн |
| 10+ | 45.16 грн |
| 25+ | 42.04 грн |
| ZXTN25060BFHTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.45 грн |
| BAS40LP-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 40V; 0.8A
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.8A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 40V; 0.8A
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.8A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 83 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.22 грн |
| 29+ | 13.91 грн |
| 31+ | 12.95 грн |
| BCX5216QTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BCX5216TA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| BCX5216TC |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 4000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 4000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| BSR43TA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
на замовлення 1552 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.87 грн |
| 18+ | 22.54 грн |
| 100+ | 14.23 грн |
| 500+ | 10.63 грн |
| 1000+ | 9.99 грн |
| DMP45H4D9HJ3 |
![]() |
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.7nC
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.7nC
на замовлення 212 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 86.08 грн |
| 25+ | 58.59 грн |
| 33+ | 29.25 грн |
| 89+ | 27.65 грн |
| ZXMN6A11DN8TA |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.6A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 2.6A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.35 грн |
| DMN63D8LV-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.45W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.45W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.94 грн |
| 35+ | 11.59 грн |
| 50+ | 8.14 грн |
| 100+ | 6.93 грн |
| 500+ | 4.75 грн |
| 1000+ | 4.02 грн |
| DMN62D0UDW-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.91 грн |
| 46+ | 8.71 грн |
| 100+ | 6.30 грн |
| 191+ | 4.92 грн |
| 525+ | 4.66 грн |
| 1000+ | 4.56 грн |
| DMN53D0LDW-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 895 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.47 грн |
| 60+ | 6.71 грн |
| 76+ | 5.32 грн |
| 100+ | 4.84 грн |
| 250+ | 3.76 грн |
| 687+ | 3.56 грн |
| DMN63D8LDWQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
на замовлення 4575 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.05 грн |
| 50+ | 8.15 грн |
| 61+ | 6.65 грн |
| 100+ | 4.75 грн |
| 500+ | 3.21 грн |
| 3000+ | 3.04 грн |
| DMN3190LDW-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 9.6A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 9.6A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 413 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.05 грн |
| 46+ | 8.79 грн |
| 52+ | 7.75 грн |
| 72+ | 5.56 грн |
| 100+ | 4.93 грн |
| DDC123JU-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
на замовлення 2549 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.47 грн |
| 65+ | 6.23 грн |
| 72+ | 5.59 грн |
| 104+ | 3.87 грн |
| 250+ | 3.42 грн |
| 500+ | 3.14 грн |
| 1000+ | 2.92 грн |
| DMN2450UFD-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.89W
Case: X1-DFN1212-3
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.89W
Case: X1-DFN1212-3
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
товару немає в наявності
В кошику
од. на суму грн.
| DMN2450UFB4-7B |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
товару немає в наявності
В кошику
од. на суму грн.
| DMN2450UFB4-7R |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
товару немає в наявності
В кошику
од. на суму грн.
| DMN2451UFB4Q-7B |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 3A; 1.1W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 3A
Power dissipation: 1.1W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 6.4nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 3A; 1.1W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 3A
Power dissipation: 1.1W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 6.4nC
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| DMN2451UFB4-7B |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.20 грн |
| DMN2451UFDQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 57000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.88 грн |
| 74AHC1G07QSE-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.38 грн |
| DMP6110SVTQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: -6.5A
On-state resistance: 0.13Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: -6.5A
On-state resistance: 0.13Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
на замовлення 1323 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.09 грн |
| 11+ | 36.93 грн |
| 100+ | 25.18 грн |
| 500+ | 19.74 грн |
| 1000+ | 19.26 грн |
| RS1G-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| RS1GB-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| RS1DB-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| GBU1010 |
![]() |
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| DMN2501UFB4-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Case: X2-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 2nC
On-state resistance: 0.7Ω
Power dissipation: 0.7W
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Case: X2-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 2nC
On-state resistance: 0.7Ω
Power dissipation: 0.7W
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DMN2250UFB-7B |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Case: X1-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.1nC
On-state resistance: 0.25Ω
Power dissipation: 0.3W
Drain current: 1.03A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Case: X1-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.1nC
On-state resistance: 0.25Ω
Power dissipation: 0.3W
Drain current: 1.03A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| ZXTP2012ASTZ |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; unipolar; 60V; 3.5A; 1W; TO92
Type of transistor: PNP
Polarisation: unipolar
Collector-emitter voltage: 60V
Collector current: 3.5A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 15A
Current gain: 10...300
Mounting: THT
Quantity in set/package: 2000pcs.
Frequency: 120MHz
Category: PNP THT transistors
Description: Transistor: PNP; unipolar; 60V; 3.5A; 1W; TO92
Type of transistor: PNP
Polarisation: unipolar
Collector-emitter voltage: 60V
Collector current: 3.5A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 15A
Current gain: 10...300
Mounting: THT
Quantity in set/package: 2000pcs.
Frequency: 120MHz
товару немає в наявності
В кошику
од. на суму грн.
| FMMT718TC |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 12.91 грн |



















