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AL5809-30QP1-7 AL5809-30QP1-7 DIODES INCORPORATED AL5809Q.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-60QP1-7 AL5809-60QP1-7 DIODES INCORPORATED AL5809Q.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5802-13 AL5802-13 DIODES INCORPORATED Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.12A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...30V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
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AL5809-90QP1-7 AL5809-90QP1-7 DIODES INCORPORATED AL5809Q.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 90mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 90mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-100QP1-7 AL5809-100QP1-7 DIODES INCORPORATED AL5809Q.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-150QP1-7 AL5809-150QP1-7 DIODES INCORPORATED AL5809Q.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.5...60V DC
Integrated circuit features: linear dimming; PWM
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AL5809-15QP1-7 AL5809-15QP1-7 DIODES INCORPORATED AL5809Q.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-40S1-7 AL5809-40S1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5822W6-7 AL5822W6-7 DIODES INCORPORATED AL5822.pdf Category: LED drivers
Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT26
Output current: 220µA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 11...30V DC
Kind of package: reel; tape
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AL5890-30D-13 AL5890-30D-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: TO252
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
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AL5890-30P1-13 AL5890-30P1-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
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AL5817MP-13 DIODES INCORPORATED AL5817.pdf Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: MSOP8EP
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
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74HCT32S14-13 74HCT32S14-13 DIODES INCORPORATED 74HCT32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74HCT32T14-13 DIODES INCORPORATED 74HCT32.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
2500+7.32 грн
Мінімальне замовлення: 2500 шт
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74LVC373AT20-13 74LVC373AT20-13 DIODES INCORPORATED 74LVC373A.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
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Мінімальне замовлення: 5 шт
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DDZX15-7 DDZX15-7 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Case: SOT23
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 1880 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
93+4.53 грн
132+3.18 грн
500+2.40 грн
1000+2.09 грн
Мінімальне замовлення: 63 шт
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DMP32D4SW-7 DMP32D4SW-7 DIODES INCORPORATED DMP32D4SW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -1A; 300mW
Pulsed drain current: -1A
Power dissipation: 0.3W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance:
Mounting: SMD
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DMP32D4S-13 DMP32D4S-13 DIODES INCORPORATED DMP32D4S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance:
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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DMP32D4S-7 DMP32D4S-7 DIODES INCORPORATED DMP32D4S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance:
Mounting: SMD
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DMP32D5SFB-7B DIODES INCORPORATED DMP32D5SFB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W
Pulsed drain current: -1A
Power dissipation: 1.2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: -0.4A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
Case: X1-DFN1006-3
On-state resistance:
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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DMP32D9UFZ-7B DIODES INCORPORATED DMP32D9UFZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Gate charge: 0.35nC
Polarisation: unipolar
Drain current: -0.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: X2-DFN0606-3
On-state resistance: 10Ω
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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S1MDF-13 DIODES INCORPORATED S1MDF.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.4us; D-FLAT; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.4µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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US2JDF-13 DIODES INCORPORATED US2JDF.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: D-FLAT
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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Мінімальне замовлення: 10000 шт
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AL9901FDF-13 DIODES INCORPORATED AL9901.pdf Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 15÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 15...500V DC
Output current: 0.4A
Type of integrated circuit: driver
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AL9902FDF-13 DIODES INCORPORATED AL9902.pdf Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 20...500V DC
Output current: 0.4A
Type of integrated circuit: driver
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DMP1009UFDF-13 DIODES INCORPORATED DMP1009UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 44nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Pulsed drain current: -70A
Power dissipation: 2W
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Мінімальне замовлення: 10000 шт
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DMP3026SFDF-13 DIODES INCORPORATED DMP3026SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Pulsed drain current: -50A
Power dissipation: 1.3W
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Мінімальне замовлення: 10000 шт
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DMN2011UFDF-13 DIODES INCORPORATED DMN2011UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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Мінімальне замовлення: 10000 шт
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DMT3020LFDF-13 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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DMP1005UFDF-13 DIODES INCORPORATED DMP1005UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 47nC
Polarisation: unipolar
Drain current: -10.3A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Pulsed drain current: -70A
Power dissipation: 2.1W
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Мінімальне замовлення: 10000 шт
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DMP2040UFDF-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19nC
Polarisation: unipolar
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Power dissipation: 1.8W
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Мінімальне замовлення: 10000 шт
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DMP6110SFDF-13 DIODES INCORPORATED DMP6110SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -20A
Power dissipation: 1.3W
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Мінімальне замовлення: 10000 шт
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DMN3021LFDF-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Pulsed drain current: 50A
Power dissipation: 1.3W
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Мінімальне замовлення: 10000 шт
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DMN1004UFDF-13 DIODES INCORPORATED DMN1004UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Power dissipation: 2.1W
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Мінімальне замовлення: 10000 шт
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DMN1008UFDF-13 DIODES INCORPORATED DMN1008UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 23.4nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Pulsed drain current: 60A
Power dissipation: 1W
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Мінімальне замовлення: 10000 шт
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DMN2024UFDF-13 DIODES INCORPORATED DMN2024UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Pulsed drain current: 40A
Power dissipation: 1.67W
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Мінімальне замовлення: 10000 шт
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DMN2028UFDF-13 DIODES INCORPORATED DMN2028UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Pulsed drain current: 40A
Power dissipation: 1.31W
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DMN3020UFDF-13 DIODES INCORPORATED DMN3020UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: 8.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Pulsed drain current: 40A
Power dissipation: 1.3W
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DMP1012UFDF-13 DIODES INCORPORATED DMP1012UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Pulsed drain current: -55A
Power dissipation: 1.36W
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DMP1022UFDF-13 DIODES INCORPORATED DMP1022UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
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DMP2021UFDF-13 DIODES INCORPORATED DMP2021UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
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DMP2023UFDF-13 DIODES INCORPORATED DMP2023UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Pulsed drain current: -40A
Power dissipation: 1.3W
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DMP6250SFDF-13 DIODES INCORPORATED DMP6250SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
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DMT3006LFDF-13 DIODES INCORPORATED DMT3006LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
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P4SMAJ10ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMN2011UFDF-7 DIODES INCORPORATED DMN2011UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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DMN2011UFX-7 DIODES INCORPORATED DMN2011UFX.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
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DMN2011UFDE-7 DIODES INCORPORATED DMN2011UFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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Мінімальне замовлення: 3000 шт
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DGTD120T25S1PT DGTD120T25S1PT DIODES INCORPORATED DGTD120T25S1PT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
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LM4040D50FTA LM4040D50FTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040B50FTA LM4040B50FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040C50FTA LM4040C50FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040B50QFTA LM4040B50QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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LM4040C50QFTA LM4040C50QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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DMT3020LSDQ-13 DMT3020LSDQ-13 DIODES INCORPORATED DMT3020LSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
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DMT3009LDT-7 DIODES INCORPORATED DMT3009LDT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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DMT3020LFDB-7 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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DMT3006LFDFQ-7 DIODES INCORPORATED DMT3006LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
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DMT3006LFV-13 DIODES INCORPORATED DMT3006LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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DMT3020LDV-7 DIODES INCORPORATED DMT3020LDV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
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AL5809-30QP1-7 AL5809Q.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-60QP1-7 AL5809Q.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5802-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.12A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...30V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
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AL5809-90QP1-7 AL5809Q.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 90mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 90mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-100QP1-7 AL5809Q.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-150QP1-7 AL5809Q.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.5...60V DC
Integrated circuit features: linear dimming; PWM
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AL5809-15QP1-7 AL5809Q.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-40S1-7 AL5809-DTE.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5822W6-7 AL5822.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT26
Output current: 220µA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 11...30V DC
Kind of package: reel; tape
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AL5890-30D-13 AL5890.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: TO252
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
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AL5890-30P1-13 AL5890.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
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AL5817MP-13 AL5817.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: MSOP8EP
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
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74HCT32S14-13 74HCT32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74HCT32T14-13 74HCT32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2500+7.32 грн
Мінімальне замовлення: 2500 шт
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74LVC373AT20-13 74LVC373A.pdf
Виробник: DIODES INCORPORATED
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
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Мінімальне замовлення: 5 шт
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DDZX15-7 ds30408.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Case: SOT23
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 1880 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
63+7.23 грн
93+4.53 грн
132+3.18 грн
500+2.40 грн
1000+2.09 грн
Мінімальне замовлення: 63 шт
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DMP32D4SW-7 DMP32D4SW.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -1A; 300mW
Pulsed drain current: -1A
Power dissipation: 0.3W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance:
Mounting: SMD
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DMP32D4S-13 DMP32D4S.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance:
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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DMP32D4S-7 DMP32D4S.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance:
Mounting: SMD
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DMP32D5SFB-7B DMP32D5SFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W
Pulsed drain current: -1A
Power dissipation: 1.2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: -0.4A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
Case: X1-DFN1006-3
On-state resistance:
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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DMP32D9UFZ-7B DMP32D9UFZ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Gate charge: 0.35nC
Polarisation: unipolar
Drain current: -0.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: X2-DFN0606-3
On-state resistance: 10Ω
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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S1MDF-13 S1MDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.4us; D-FLAT; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.4µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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US2JDF-13 US2JDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: D-FLAT
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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Мінімальне замовлення: 10000 шт
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AL9901FDF-13 AL9901.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 15÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 15...500V DC
Output current: 0.4A
Type of integrated circuit: driver
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AL9902FDF-13 AL9902.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 20...500V DC
Output current: 0.4A
Type of integrated circuit: driver
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DMP1009UFDF-13 DMP1009UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 44nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Pulsed drain current: -70A
Power dissipation: 2W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMP3026SFDF-13 DMP3026SFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Pulsed drain current: -50A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMN2011UFDF-13 DMN2011UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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Мінімальне замовлення: 10000 шт
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DMT3020LFDF-13 DMT3020LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMP1005UFDF-13 DMP1005UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 47nC
Polarisation: unipolar
Drain current: -10.3A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Pulsed drain current: -70A
Power dissipation: 2.1W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMP2040UFDF-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19nC
Polarisation: unipolar
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Power dissipation: 1.8W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMP6110SFDF-13 DMP6110SFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -20A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMN3021LFDF-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Pulsed drain current: 50A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMN1004UFDF-13 DMN1004UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Power dissipation: 2.1W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMN1008UFDF-13 DMN1008UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 23.4nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Pulsed drain current: 60A
Power dissipation: 1W
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Мінімальне замовлення: 10000 шт
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DMN2024UFDF-13 DMN2024UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Pulsed drain current: 40A
Power dissipation: 1.67W
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Мінімальне замовлення: 10000 шт
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DMN2028UFDF-13 DMN2028UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Pulsed drain current: 40A
Power dissipation: 1.31W
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Мінімальне замовлення: 10000 шт
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DMN3020UFDF-13 DMN3020UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: 8.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Pulsed drain current: 40A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMP1012UFDF-13 DMP1012UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Pulsed drain current: -55A
Power dissipation: 1.36W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMP1022UFDF-13 DMP1022UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMP2021UFDF-13 DMP2021UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMP2023UFDF-13 DMP2023UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Pulsed drain current: -40A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMP6250SFDF-13 DMP6250SFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
товару немає в наявності
Мінімальне замовлення: 10000 шт
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DMT3006LFDF-13 DMT3006LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
P4SMAJ10ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMN2011UFDF-7 DMN2011UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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DMN2011UFX-7 DMN2011UFX.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMN2011UFDE-7 DMN2011UFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
товару немає в наявності
Мінімальне замовлення: 3000 шт
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DGTD120T25S1PT DGTD120T25S1PT.pdf
Виробник: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
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LM4040D50FTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040B50FTA LM4040.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040C50FTA LM4040.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040B50QFTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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LM4040C50QFTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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DMT3020LSDQ-13 DMT3020LSDQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
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Мінімальне замовлення: 2500 шт
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DMT3009LDT-7 DMT3009LDT.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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DMT3020LFDB-7 DMT3020LFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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DMT3006LFDFQ-7 DMT3006LFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
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DMT3006LFV-13 DMT3006LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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DMT3020LDV-7 DMT3020LDV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
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