Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73707) > Сторінка 1224 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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AL5809-30QP1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 30mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 30mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.5...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5809-60QP1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 60mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.5...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5802-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SOT26 Output current: 0.12A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...30V DC Kind of package: reel; tape Integrated circuit features: linear dimming; PWM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5809-90QP1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 90mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 90mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.5...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5809-100QP1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 0.1A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.5...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5809-150QP1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 150mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 0.15A Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.5...60V DC Integrated circuit features: linear dimming; PWM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5809-15QP1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 15mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.5...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5809-40S1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; SOD123; 40mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Output current: 40mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...125°C Operating voltage: 2.5...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5822W6-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SOT26 Output current: 220µA Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 11...30V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5890-30D-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; single transistor; LED driver; TO252; 30mA; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: LED driver Case: TO252 Output current: 30mA Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 7...400V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AL5890-30P1-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; single transistor; LED driver; PowerDI®123; 30mA; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: LED driver Case: PowerDI®123 Output current: 30mA Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 7...400V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AL5817MP-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: MSOP8EP Output current: 15mA Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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74HCT32S14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Operating temperature: -40...150°C Kind of output: push-pull Family: HCT Supply voltage: 4.5...5.5V DC Kind of input: with Schmitt trigger Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 74HCT32T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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74LVC373AT20-13 | DIODES INCORPORATED |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20 Operating temperature: -40...150°C Kind of output: 3-state Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 1 Kind of package: reel; tape Case: TSSOP20 Family: LVC Kind of integrated circuit: D latch Number of channels: 8 Mounting: SMD Supply voltage: 1.65...3.6V DC Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||
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DDZX15-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Case: SOT23 Mounting: SMD Tolerance: ±2.5% Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 1880 шт: термін постачання 14-30 дні (днів) |
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DMP32D4SW-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -1A; 300mW Pulsed drain current: -1A Power dissipation: 0.3W Gate charge: 1.2nC Polarisation: unipolar Drain current: -0.2A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: SOT323 On-state resistance: 4Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DMP32D4S-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23 Pulsed drain current: -1A Power dissipation: 0.54W Gate charge: 1.2nC Polarisation: unipolar Drain current: -0.25A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SOT23 On-state resistance: 4Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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DMP32D4S-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23 Pulsed drain current: -1A Power dissipation: 0.54W Gate charge: 1.2nC Polarisation: unipolar Drain current: -0.25A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 4Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DMP32D5SFB-7B | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W Pulsed drain current: -1A Power dissipation: 1.2W Gate charge: 4nC Polarisation: unipolar Drain current: -0.4A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±25V Kind of package: 7 inch reel; tape Case: X1-DFN1006-3 On-state resistance: 4Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP32D9UFZ-7B | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW Pulsed drain current: -0.7A Power dissipation: 0.39W Gate charge: 0.35nC Polarisation: unipolar Drain current: -0.1A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Case: X2-DFN0606-3 On-state resistance: 10Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| S1MDF-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 1.4us; D-FLAT; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.4µs Semiconductor structure: single diode Case: D-FLAT Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| US2JDF-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 2A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 75ns Semiconductor structure: single diode Capacitance: 10pF Case: D-FLAT Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| AL9901FDF-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 15÷500VDC; 90% Mounting: SMD Case: U-DFN6040-12 Kind of package: reel; tape Operating temperature: -40...105°C Efficiency: 90% Kind of integrated circuit: LED driver Number of channels: 1 Operating voltage: 15...500V DC Output current: 0.4A Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| AL9902FDF-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90% Mounting: SMD Case: U-DFN6040-12 Kind of package: reel; tape Operating temperature: -40...105°C Efficiency: 90% Kind of integrated circuit: LED driver Number of channels: 1 Operating voltage: 20...500V DC Output current: 0.4A Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMP1009UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 44nC Polarisation: unipolar Drain current: -12A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 30mΩ Pulsed drain current: -70A Power dissipation: 2W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP3026SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 19.6nC Polarisation: unipolar Drain current: -8.3A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 54mΩ Pulsed drain current: -50A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMN2011UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Power dissipation: 1.3W Gate charge: 56nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMT3020LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Pulsed drain current: 40A Power dissipation: 1.1W Gate charge: 7nC Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP1005UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 47nC Polarisation: unipolar Drain current: -10.3A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 18.5mΩ Pulsed drain current: -70A Power dissipation: 2.1W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP2040UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 19nC Polarisation: unipolar Drain current: -4.9A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Power dissipation: 1.8W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP6110SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 17.2nC Polarisation: unipolar Drain current: -3.4A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.13Ω Pulsed drain current: -20A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMN3021LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 14nC Polarisation: unipolar Drain current: 9.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 20mΩ Pulsed drain current: 50A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMN1004UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Polarisation: unipolar Drain-source voltage: 12V Type of transistor: N-MOSFET On-state resistance: 4.8mΩ Power dissipation: 2.1W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMN1008UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 23.4nC Polarisation: unipolar Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 12.5mΩ Pulsed drain current: 60A Power dissipation: 1W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMN2024UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 14.8nC Polarisation: unipolar Drain current: 5.6A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±10V On-state resistance: 50mΩ Pulsed drain current: 40A Power dissipation: 1.67W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMN2028UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 18nC Polarisation: unipolar Drain current: 7.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 95mΩ Pulsed drain current: 40A Power dissipation: 1.31W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMN3020UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 27nC Polarisation: unipolar Drain current: 8.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V On-state resistance: 0.12Ω Pulsed drain current: 40A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP1012UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 31nC Polarisation: unipolar Drain current: -12.6A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 40mΩ Pulsed drain current: -55A Power dissipation: 1.36W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP1022UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 48.3nC Polarisation: unipolar Drain current: -8.8A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 32mΩ Pulsed drain current: -90A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP2021UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 59nC Polarisation: unipolar Drain current: -8.9A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 80mΩ Pulsed drain current: -60A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP2023UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 27nC Polarisation: unipolar Drain current: -7.6A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 90mΩ Pulsed drain current: -40A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMP6250SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Type of transistor: P-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| DMT3006LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
| P4SMAJ10ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| DMN2011UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Power dissipation: 1.3W Gate charge: 56nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMN2011UFX-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Gate charge: 56nC Polarisation: unipolar Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: V-DFN2050-4 On-state resistance: 13mΩ Pulsed drain current: 80A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| DMN2011UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Mounting: SMD Power dissipation: 1.27W Gate charge: 84nC Polarisation: unipolar Drain current: 11.4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 35mΩ Pulsed drain current: 80A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
|
DGTD120T25S1PT | DIODES INCORPORATED |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Type of transistor: IGBT Turn-on time: 110ns Kind of package: tube Case: TO247-3 Turn-off time: 367ns Gate-emitter voltage: ±20V Collector current: 25A Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 174W Gate charge: 204nC Pulsed collector current: 100A |
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В кошику од. на суму грн. | ||||||||||
|
LM4040D50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
LM4040B50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
LM4040C50FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
LM4040B50QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
LM4040C50QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DMT3020LSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Pulsed drain current: 50A Power dissipation: 1.5W Gate charge: 7nC Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SO8 On-state resistance: 32mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
| DMT3009LDT-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Pulsed drain current: 80A Power dissipation: 1.2W Gate charge: 20nC Polarisation: unipolar Drain current: 11A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: 7 inch reel; tape Case: V-DFN3030-8 On-state resistance: 22mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| DMT3020LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| DMT3006LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 16.7nC Polarisation: unipolar Drain current: 12.5A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 15mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT3006LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Pulsed drain current: 90A Power dissipation: 2W Gate charge: 16.7nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 11mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| DMT3020LDV-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Pulsed drain current: 50A Power dissipation: 1.9W Gate charge: 7nC Polarisation: unipolar Drain current: 25A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 32mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| AL5809-30QP1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| AL5809-60QP1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| AL5802-13 |
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.12A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...30V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.12A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...30V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
товару немає в наявності
В кошику
од. на суму грн.
| AL5809-90QP1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 90mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 90mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 90mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 90mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| AL5809-100QP1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| AL5809-150QP1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.5...60V DC
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.5...60V DC
Integrated circuit features: linear dimming; PWM
товару немає в наявності
В кошику
од. на суму грн.
| AL5809-15QP1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| AL5809-40S1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| AL5822W6-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT26
Output current: 220µA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 11...30V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT26
Output current: 220µA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 11...30V DC
Kind of package: reel; tape
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В кошику
од. на суму грн.
| AL5890-30D-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: TO252
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: TO252
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
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В кошику
од. на суму грн.
| AL5890-30P1-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; single transistor; LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 7...400V DC
Kind of package: reel; tape
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В кошику
од. на суму грн.
| AL5817MP-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: MSOP8EP
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: MSOP8EP
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 74HCT32S14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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| 74HCT32T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 7.32 грн |
| 74LVC373AT20-13 |
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Виробник: DIODES INCORPORATED
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Operating temperature: -40...150°C
Kind of output: 3-state
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 1.65...3.6V DC
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 5 шт
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од. на суму грн.
| DDZX15-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Case: SOT23
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Case: SOT23
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 1880 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 93+ | 4.53 грн |
| 132+ | 3.18 грн |
| 500+ | 2.40 грн |
| 1000+ | 2.09 грн |
| DMP32D4SW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -1A; 300mW
Pulsed drain current: -1A
Power dissipation: 0.3W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 4Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -1A; 300mW
Pulsed drain current: -1A
Power dissipation: 0.3W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 4Ω
Mounting: SMD
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| DMP32D4S-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 4Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 4Ω
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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| DMP32D4S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 4Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23
Pulsed drain current: -1A
Power dissipation: 0.54W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 4Ω
Mounting: SMD
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| DMP32D5SFB-7B |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W
Pulsed drain current: -1A
Power dissipation: 1.2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: -0.4A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
Case: X1-DFN1006-3
On-state resistance: 4Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W
Pulsed drain current: -1A
Power dissipation: 1.2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: -0.4A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
Case: X1-DFN1006-3
On-state resistance: 4Ω
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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| DMP32D9UFZ-7B |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Gate charge: 0.35nC
Polarisation: unipolar
Drain current: -0.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: X2-DFN0606-3
On-state resistance: 10Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Gate charge: 0.35nC
Polarisation: unipolar
Drain current: -0.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: X2-DFN0606-3
On-state resistance: 10Ω
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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| S1MDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.4us; D-FLAT; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.4µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.4us; D-FLAT; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.4µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| US2JDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: D-FLAT
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; D-FLAT; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: D-FLAT
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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Мінімальне замовлення: 10000 шт
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| AL9901FDF-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 15÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 15...500V DC
Output current: 0.4A
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 15÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 15...500V DC
Output current: 0.4A
Type of integrated circuit: driver
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| AL9902FDF-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 20...500V DC
Output current: 0.4A
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; LED driver; U-DFN6040-12; 400mA; Ch: 1; 20÷500VDC; 90%
Mounting: SMD
Case: U-DFN6040-12
Kind of package: reel; tape
Operating temperature: -40...105°C
Efficiency: 90%
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 20...500V DC
Output current: 0.4A
Type of integrated circuit: driver
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| DMP1009UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 44nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Pulsed drain current: -70A
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 44nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Pulsed drain current: -70A
Power dissipation: 2W
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Мінімальне замовлення: 10000 шт
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| DMP3026SFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Pulsed drain current: -50A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Pulsed drain current: -50A
Power dissipation: 1.3W
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Мінімальне замовлення: 10000 шт
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| DMN2011UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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Мінімальне замовлення: 10000 шт
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| DMT3020LFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Pulsed drain current: 40A
Power dissipation: 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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| DMP1005UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 47nC
Polarisation: unipolar
Drain current: -10.3A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Pulsed drain current: -70A
Power dissipation: 2.1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 47nC
Polarisation: unipolar
Drain current: -10.3A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Pulsed drain current: -70A
Power dissipation: 2.1W
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Мінімальне замовлення: 10000 шт
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| DMP2040UFDF-13 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19nC
Polarisation: unipolar
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Power dissipation: 1.8W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 19nC
Polarisation: unipolar
Drain current: -4.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Power dissipation: 1.8W
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Мінімальне замовлення: 10000 шт
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| DMP6110SFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -20A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -20A
Power dissipation: 1.3W
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Мінімальне замовлення: 10000 шт
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| DMN3021LFDF-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Pulsed drain current: 50A
Power dissipation: 1.3W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14nC
Polarisation: unipolar
Drain current: 9.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Pulsed drain current: 50A
Power dissipation: 1.3W
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Мінімальне замовлення: 10000 шт
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| DMN1004UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Power dissipation: 2.1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Power dissipation: 2.1W
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Мінімальне замовлення: 10000 шт
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| DMN1008UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 23.4nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Pulsed drain current: 60A
Power dissipation: 1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 23.4nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Pulsed drain current: 60A
Power dissipation: 1W
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Мінімальне замовлення: 10000 шт
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| DMN2024UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Pulsed drain current: 40A
Power dissipation: 1.67W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 14.8nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Pulsed drain current: 40A
Power dissipation: 1.67W
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| DMN2028UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Pulsed drain current: 40A
Power dissipation: 1.31W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 18nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Pulsed drain current: 40A
Power dissipation: 1.31W
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| DMN3020UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: 8.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Pulsed drain current: 40A
Power dissipation: 1.3W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: 8.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Pulsed drain current: 40A
Power dissipation: 1.3W
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| DMP1012UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Pulsed drain current: -55A
Power dissipation: 1.36W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 31nC
Polarisation: unipolar
Drain current: -12.6A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Pulsed drain current: -55A
Power dissipation: 1.36W
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| DMP1022UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
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| DMP2021UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
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| DMP2023UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Pulsed drain current: -40A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 27nC
Polarisation: unipolar
Drain current: -7.6A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Pulsed drain current: -40A
Power dissipation: 1.3W
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Мінімальне замовлення: 10000 шт
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| DMP6250SFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
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Мінімальне замовлення: 10000 шт
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| DMT3006LFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
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| P4SMAJ10ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DMN2011UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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| DMN2011UFX-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
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Мінімальне замовлення: 3000 шт
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| DMN2011UFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Mounting: SMD
Power dissipation: 1.27W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 11.4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 35mΩ
Pulsed drain current: 80A
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Мінімальне замовлення: 3000 шт
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| DGTD120T25S1PT |
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Виробник: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 367ns
Gate-emitter voltage: ±20V
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 174W
Gate charge: 204nC
Pulsed collector current: 100A
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| LM4040D50FTA |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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| LM4040B50FTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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| LM4040C50FTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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| LM4040B50QFTA |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.2%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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| LM4040C50QFTA |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±0.5%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Application: automotive industry
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| DMT3020LSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Pulsed drain current: 50A
Power dissipation: 1.5W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
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Мінімальне замовлення: 2500 шт
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| DMT3009LDT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Pulsed drain current: 80A
Power dissipation: 1.2W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 7 inch reel; tape
Case: V-DFN3030-8
On-state resistance: 22mΩ
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| DMT3020LFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Pulsed drain current: 50A
Power dissipation: 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| DMT3006LFDFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LFV-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Pulsed drain current: 90A
Power dissipation: 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT3020LDV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Pulsed drain current: 50A
Power dissipation: 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.














