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MMBZ5245BQ-7-F DIODES INCORPORATED ds18011.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Application: automotive industry
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
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MMBZ5245BS-7-F DIODES INCORPORATED ds31039.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Semiconductor structure: double independent
Mounting: SMD
Case: SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Kind of package: reel; tape
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MMBZ5245BTS-7-F DIODES INCORPORATED MMBZ5221-5259BTS.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; triple independent
Semiconductor structure: triple independent
Mounting: SMD
Case: SOT363
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
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ADTA143ZUAQ-7 DIODES INCORPORATED ADTA143ZUAQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTA143ZUA-7-F DIODES INCORPORATED ds30326.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA143ZE-7-F DIODES INCORPORATED ds30318.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DMN2004TK-7 DMN2004TK-7 DIODES INCORPORATED ds30936.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2004WK-7 DMN2004WK-7 DIODES INCORPORATED DMN2004WK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2004DWK-7 DMN2004DWK-7 DIODES INCORPORATED ds30935.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.95nC
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DMN2004DMK-7 DMN2004DMK-7 DIODES INCORPORATED ds30937.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.225W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2004DWKQ-7 DMN2004DWKQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate charge: 0.95nC
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DMN2004VK-7 DMN2004VK-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8C15CBE1E78BF&compId=DMN2004VK.pdf?ci_sign=bbcffe7e3278e12b69173312bf6e80f9762f7eb4 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMN2004WKQ-7 DMN2004WKQ-7 DIODES INCORPORATED DMN2004WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMC2038LVTQ-7 DMC2038LVTQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F919AAE5086748&compId=DMC2038LVT.pdf?ci_sign=24c761d84463dfae20acdca8d0cb6d908454d186 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.1A
Power dissipation: 0.5W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.056/0.168Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1657 шт:
термін постачання 21-30 дні (днів)
12+37.01 грн
15+28.29 грн
17+24.70 грн
100+13.99 грн
500+9.83 грн
1000+9.03 грн
Мінімальне замовлення: 12
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BAV116W-7-F BAV116W-7-F DIODES INCORPORATED ds30291.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 130V; 0.215A; 3us; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 130V
Load current: 0.215A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 3µs
на замовлення 3262 шт:
термін постачання 21-30 дні (днів)
56+7.75 грн
70+5.75 грн
77+5.20 грн
113+3.55 грн
500+2.61 грн
1000+2.34 грн
Мінімальне замовлення: 56
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BAV116WSQ-7 BAV116WSQ-7 DIODES INCORPORATED BAV116WSQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 3µs
Application: automotive industry
на замовлення 1110 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
65+6.23 грн
87+4.62 грн
100+4.13 грн
500+3.06 грн
Мінімальне замовлення: 63
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AL8116W6-7 DIODES INCORPORATED AL8116.pdf Category: LED drivers
Description: IC: driver; LED driver; SOT26; 600uA; Ch: 1; 10÷56VDC
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 0.6mA
Number of channels: 1
Operating voltage: 10...56V DC
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BAV116WS-7 DIODES INCORPORATED BAV116WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 3µs
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LM4040B25FTA LM4040B25FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)
13+34.43 грн
18+22.46 грн
25+20.30 грн
100+17.50 грн
250+16.07 грн
500+15.67 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
LM4040B25QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LM4040B30QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LM4040B33FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LM4040B41FTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LM4040B41QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LSP5523-R8A DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DF9CBBAFAEF20D3&compId=LSP5523.pdf?ci_sign=5c2e42f6f5c18c5d2d9f30785b2300538830a788 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷27VDC; Uout: 0.925÷21.6VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...27V DC
Output voltage: 0.925...21.6V DC
Output current: 3A
Case: ESOP8
Mounting: SMD
Frequency: 0.34MHz
Topology: buck
Operating temperature: -20...125°C
Kind of package: reel; tape
Efficiency: 93%
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ZXMS81045SPQ-13 DIODES INCORPORATED ZXMS81045SPQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 5...28V DC
Operating temperature: -40...150°C
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AP7165-FNG-7 DIODES INCORPORATED AP7165.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 0.6A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: U-DFN3030-10
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.6A
Voltage drop: 0.4V
Output voltage: 0.8...5V
Number of channels: 1
Tolerance: ±2.5%
Input voltage: 2.2...5.5V
Manufacturer series: AP7165
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SMAJ64A-13-F SMAJ64A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1÷78.6V; 3.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC1G08W5-7 74LVC1G08W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726B00D3&compId=74LVC1G08.pdf?ci_sign=27b1c9820a075aadbf516c5042119fb4b65b3766 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
на замовлення 1888 шт:
термін постачання 21-30 дні (днів)
50+8.61 грн
60+6.71 грн
66+6.07 грн
79+5.08 грн
100+4.08 грн
250+3.95 грн
Мінімальне замовлення: 50
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74LVC1G08SE-7 74LVC1G08SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE80D1A740767E28&compId=74LVC1G08.pdf?ci_sign=f78953fb7cc04bf2b1e94c615ac317f5e5e2b055 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Family: LVC
Kind of output: push-pull
на замовлення 712 шт:
термін постачання 21-30 дні (днів)
42+10.33 грн
48+8.47 грн
55+7.35 грн
66+6.14 грн
75+5.39 грн
100+4.83 грн
250+4.30 грн
500+4.04 грн
Мінімальне замовлення: 42
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74AUP1G08FW5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68A440D3&compId=74AUP1G08.pdf?ci_sign=8189107f91067d65f95a43f936905ac44260313f Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of output: push-pull
Kind of input: with Schmitt trigger
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74LVC1G08FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726A00D3&compId=74LVC1G08.pdf?ci_sign=2e4b523ccae539314c3cab1654675629e464ff09 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G08FS3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EB820D3&compId=74LVC1G08.pdf?ci_sign=4a91346335e695bdb5a0781cbbe979375e2f33e8 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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ZVP2110A ZVP2110A DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D87CAD4826011C&compId=ZVP2110A.pdf?ci_sign=11e25d5911442d79e44694623fb63e1f63288da7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 2221 шт:
термін постачання 21-30 дні (днів)
6+79.19 грн
10+49.32 грн
25+42.36 грн
50+37.81 грн
70+35.97 грн
100+34.05 грн
500+28.45 грн
Мінімальне замовлення: 6
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ZVP2110ASTZ DIODES INCORPORATED ZVP2110A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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SDM40E20LA-7 SDM40E20LA-7 DIODES INCORPORATED SDM40E20L_S_C_A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Leakage current: 0.25mA
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
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SDM40E20LAQ-7 SDM40E20LAQ-7 DIODES INCORPORATED SDM40E20LSQ-AQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Leakage current: 0.25mA
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Application: automotive industry
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DFLZ15-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1 Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
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SMBJ85CA-13-F SMBJ85CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74AHC1G09SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02A20D3&compId=74AHC1G09.pdf?ci_sign=8e02f9bc78c62505d01c1b4e7686bb5c8f4d790b Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AHC
Kind of input: with Schmitt trigger
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74AHC1G09W5-7 74AHC1G09W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02B20D3&compId=74AHC1G09.pdf?ci_sign=20f92b3da402c9ac768b3c7a3ea3cb70b96f343c Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AHC
Kind of input: with Schmitt trigger
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DMP4065S-7 DMP4065S-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1BC5F71D738BF&compId=DMP4065S.pdf?ci_sign=4b4667a6162feb97eecdbb433462fbd1c588da01 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
On-state resistance: 0.1Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
на замовлення 5577 шт:
термін постачання 21-30 дні (днів)
18+24.96 грн
26+15.59 грн
50+10.87 грн
100+9.27 грн
500+6.71 грн
1000+6.07 грн
1500+5.67 грн
3000+5.20 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMP4025SFGQ-7 DMP4025SFGQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: -5.4A
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)
7+63.70 грн
11+38.05 грн
100+24.78 грн
500+19.18 грн
1000+17.34 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMP4065SQ-7 DMP4065SQ-7 DIODES INCORPORATED DMP4065SQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain current: -2.7A
Drain-source voltage: -40V
Gate charge: 12.2nC
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4025SFGQ-13 DMP4025SFGQ-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: -5.4A
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFG-7 DIODES INCORPORATED DMP4013LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: -8.3A
Drain-source voltage: -40V
On-state resistance: 13mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4006SPSWQ-13 DIODES INCORPORATED DMP4006SPSWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4010SK3-13 DIODES INCORPORATED DMP4010SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -12A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 14mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4010SK3Q-13 DIODES INCORPORATED DMP4010SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -12A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 14mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4011SK3-13 DIODES INCORPORATED DMP4011SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 19mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4011SK3Q-13 DIODES INCORPORATED DMP4011SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 19mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4011SPSQ-13 DIODES INCORPORATED DMP4011SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -300A
Drain current: -9.4A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 14mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFG-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFGQ-13 DIODES INCORPORATED DMP4013LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFGQ-7 DIODES INCORPORATED DMP4013LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4013SPS-13 DIODES INCORPORATED DMP4013SPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013SPSQ-13 DIODES INCORPORATED DMP4013SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4015SK3-13 DIODES INCORPORATED DMP4015SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -100A; 3.5W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -27A
Drain-source voltage: -40V
On-state resistance: 11mΩ
Power dissipation: 3.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4015SPSQ-13 DIODES INCORPORATED DMP4015SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -8.7A
Drain-source voltage: -40V
On-state resistance: 15mΩ
Power dissipation: 0.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4025LK3-13 DIODES INCORPORATED DMP4025LK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -35A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.78W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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MMBZ5245BQ-7-F ds18011.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Application: automotive industry
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
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MMBZ5245BS-7-F ds31039.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Semiconductor structure: double independent
Mounting: SMD
Case: SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Kind of package: reel; tape
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MMBZ5245BTS-7-F MMBZ5221-5259BTS.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; triple independent
Semiconductor structure: triple independent
Mounting: SMD
Case: SOT363
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
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ADTA143ZUAQ-7 ADTA143ZUAQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTA143ZUA-7-F ds30326.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DDTA143ZE-7-F ds30318.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
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DMN2004TK-7 ds30936.pdf
DMN2004TK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2004WK-7 DMN2004WK.pdf
DMN2004WK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2004DWK-7 ds30935.pdf
DMN2004DWK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.95nC
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DMN2004DMK-7 ds30937.pdf
DMN2004DMK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.225W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2004DWKQ-7
DMN2004DWKQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate charge: 0.95nC
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DMN2004VK-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8C15CBE1E78BF&compId=DMN2004VK.pdf?ci_sign=bbcffe7e3278e12b69173312bf6e80f9762f7eb4
DMN2004VK-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMN2004WKQ-7 DMN2004WKQ.pdf
DMN2004WKQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.39A
Pulsed drain current: 1.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMC2038LVTQ-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F919AAE5086748&compId=DMC2038LVT.pdf?ci_sign=24c761d84463dfae20acdca8d0cb6d908454d186
DMC2038LVTQ-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.1A
Power dissipation: 0.5W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.056/0.168Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1657 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.01 грн
15+28.29 грн
17+24.70 грн
100+13.99 грн
500+9.83 грн
1000+9.03 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAV116W-7-F ds30291.pdf
BAV116W-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 130V; 0.215A; 3us; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 130V
Load current: 0.215A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 3µs
на замовлення 3262 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.75 грн
70+5.75 грн
77+5.20 грн
113+3.55 грн
500+2.61 грн
1000+2.34 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
BAV116WSQ-7 BAV116WSQ.pdf
BAV116WSQ-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 3µs
Application: automotive industry
на замовлення 1110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
65+6.23 грн
87+4.62 грн
100+4.13 грн
500+3.06 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
AL8116W6-7 AL8116.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT26; 600uA; Ch: 1; 10÷56VDC
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 0.6mA
Number of channels: 1
Operating voltage: 10...56V DC
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BAV116WS-7 BAV116WS.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 3µs
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LM4040B25FTA LM4040.pdf
LM4040B25FTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.43 грн
18+22.46 грн
25+20.30 грн
100+17.50 грн
250+16.07 грн
500+15.67 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
LM4040B25QFTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LM4040B30QFTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LM4040B33FTA LM4040.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LM4040B41FTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LM4040B41QFTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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LSP5523-R8A pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DF9CBBAFAEF20D3&compId=LSP5523.pdf?ci_sign=5c2e42f6f5c18c5d2d9f30785b2300538830a788
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷27VDC; Uout: 0.925÷21.6VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...27V DC
Output voltage: 0.925...21.6V DC
Output current: 3A
Case: ESOP8
Mounting: SMD
Frequency: 0.34MHz
Topology: buck
Operating temperature: -20...125°C
Kind of package: reel; tape
Efficiency: 93%
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ZXMS81045SPQ-13 ZXMS81045SPQ.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 5...28V DC
Operating temperature: -40...150°C
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AP7165-FNG-7 AP7165.pdf
Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 0.6A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: U-DFN3030-10
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.6A
Voltage drop: 0.4V
Output voltage: 0.8...5V
Number of channels: 1
Tolerance: ±2.5%
Input voltage: 2.2...5.5V
Manufacturer series: AP7165
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SMAJ64A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ64A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1÷78.6V; 3.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC1G08W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726B00D3&compId=74LVC1G08.pdf?ci_sign=27b1c9820a075aadbf516c5042119fb4b65b3766
74LVC1G08W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
на замовлення 1888 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.61 грн
60+6.71 грн
66+6.07 грн
79+5.08 грн
100+4.08 грн
250+3.95 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
74LVC1G08SE-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE80D1A740767E28&compId=74LVC1G08.pdf?ci_sign=f78953fb7cc04bf2b1e94c615ac317f5e5e2b055
74LVC1G08SE-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Family: LVC
Kind of output: push-pull
на замовлення 712 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.33 грн
48+8.47 грн
55+7.35 грн
66+6.14 грн
75+5.39 грн
100+4.83 грн
250+4.30 грн
500+4.04 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
74AUP1G08FW5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68A440D3&compId=74AUP1G08.pdf?ci_sign=8189107f91067d65f95a43f936905ac44260313f
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of output: push-pull
Kind of input: with Schmitt trigger
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74LVC1G08FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726A00D3&compId=74LVC1G08.pdf?ci_sign=2e4b523ccae539314c3cab1654675629e464ff09
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G08FS3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EB820D3&compId=74LVC1G08.pdf?ci_sign=4a91346335e695bdb5a0781cbbe979375e2f33e8
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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ZVP2110A pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D87CAD4826011C&compId=ZVP2110A.pdf?ci_sign=11e25d5911442d79e44694623fb63e1f63288da7
ZVP2110A
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 2221 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+79.19 грн
10+49.32 грн
25+42.36 грн
50+37.81 грн
70+35.97 грн
100+34.05 грн
500+28.45 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ZVP2110ASTZ ZVP2110A.pdf
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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SDM40E20LA-7 SDM40E20L_S_C_A.pdf
SDM40E20LA-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Leakage current: 0.25mA
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
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SDM40E20LAQ-7 SDM40E20LSQ-AQ.pdf
SDM40E20LAQ-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Leakage current: 0.25mA
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Application: automotive industry
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DFLZ15-7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
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SMBJ85CA-13-F SMBJ_ser.pdf
SMBJ85CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74AHC1G09SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02A20D3&compId=74AHC1G09.pdf?ci_sign=8e02f9bc78c62505d01c1b4e7686bb5c8f4d790b
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AHC
Kind of input: with Schmitt trigger
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74AHC1G09W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02B20D3&compId=74AHC1G09.pdf?ci_sign=20f92b3da402c9ac768b3c7a3ea3cb70b96f343c
74AHC1G09W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AHC
Kind of input: with Schmitt trigger
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DMP4065S-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1BC5F71D738BF&compId=DMP4065S.pdf?ci_sign=4b4667a6162feb97eecdbb433462fbd1c588da01
DMP4065S-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
On-state resistance: 0.1Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
на замовлення 5577 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.96 грн
26+15.59 грн
50+10.87 грн
100+9.27 грн
500+6.71 грн
1000+6.07 грн
1500+5.67 грн
3000+5.20 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMP4025SFGQ-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1
DMP4025SFGQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: -5.4A
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.70 грн
11+38.05 грн
100+24.78 грн
500+19.18 грн
1000+17.34 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMP4065SQ-7 DMP4065SQ.pdf
DMP4065SQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain current: -2.7A
Drain-source voltage: -40V
Gate charge: 12.2nC
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4025SFGQ-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1
DMP4025SFGQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: -5.4A
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFG-7 DMP4013LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: -8.3A
Drain-source voltage: -40V
On-state resistance: 13mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4006SPSWQ-13 DMP4006SPSWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4010SK3-13 DMP4010SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -12A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 14mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4010SK3Q-13 DMP4010SK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -12A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 14mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4011SK3-13 DMP4011SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 19mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4011SK3Q-13 DMP4011SK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 19mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4011SPSQ-13 DMP4011SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -300A
Drain current: -9.4A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 14mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFG-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFGQ-13 DMP4013LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFGQ-7 DMP4013LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4013SPS-13 DMP4013SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013SPSQ-13 DMP4013SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4015SK3-13 DMP4015SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -100A; 3.5W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -27A
Drain-source voltage: -40V
On-state resistance: 11mΩ
Power dissipation: 3.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4015SPSQ-13 DMP4015SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -8.7A
Drain-source voltage: -40V
On-state resistance: 15mΩ
Power dissipation: 0.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4025LK3-13 DMP4025LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -35A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.78W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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