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APX823-29W5G-7 APX823-29W5G-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98597D9A0B0A238BF&compId=APX823_824_825A.pdf?ci_sign=e58b2230c8107c9624693080d4b2b19f291b9803 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT25
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.93V
Active logical level: low
Kind of package: reel; tape
Operating temperature: -40...85°C
на замовлення 890 шт:
термін постачання 21-30 дні (днів)
16+27.54 грн
20+20.78 грн
22+18.46 грн
26+15.83 грн
100+13.19 грн
250+12.07 грн
500+11.43 грн
Мінімальне замовлення: 16
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DMN2005UFG-7 DIODES INCORPORATED DMN2005UFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 14A
Pulsed drain current: 130A
Power dissipation: 2.27W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2021UFDF-7 DIODES INCORPORATED DMP2021UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Pulsed drain current: -60A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1009UFDF-7 DIODES INCORPORATED DMP1009UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -70A
Power dissipation: 2W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDF-7 DIODES INCORPORATED DMP3026SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1004UFDF-7 DIODES INCORPORATED DMN1004UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 12A
Pulsed drain current: 70A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1008UFDF-7 DIODES INCORPORATED DMN1008UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2025UFDF-7 DIODES INCORPORATED DMN2025UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Pulsed drain current: 30A
Power dissipation: 1.6W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3016LFDF-7 DIODES INCORPORATED DMN3016LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 50A; 0.47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3042LFDF-7 DIODES INCORPORATED DMN3042LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1005UFDF-7 DIODES INCORPORATED DMP1005UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -10.3A
Pulsed drain current: -70A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1012UFDF-7 DIODES INCORPORATED DMP1012UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12.6A
Pulsed drain current: -55A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2023UFDF-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E05FA6A79B78BF&compId=DMP2023UFDF.pdf?ci_sign=912fb07fa6c93dc48ed1765d781a9b2e128bee68 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFDF-7 DIODES INCORPORATED DMP2035UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2040UFDF-7 DIODES INCORPORATED DMP2040UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.9A
Pulsed drain current: -35A
Power dissipation: 0.8W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP6110SFDF-7 DIODES INCORPORATED DMP6110SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT5015LFDF-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 7.3A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 7.3A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT6013LFDF-7 DIODES INCORPORATED DMT6013LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT6016LFDF-7 DIODES INCORPORATED DMT6016LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.9A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LFDF-7 DIODES INCORPORATED DMN10H220LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT10H032LFDF-7 DIODES INCORPORATED DMT10H032LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 40A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 40A
Power dissipation: 1.1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT10H072LFDF-7 DIODES INCORPORATED DMT10H072LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 1.1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT12H060LFDF-7 DIODES INCORPORATED DMT12H060LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.4A; Idm: 20A; 1.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.4A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: 7 inch reel
Kind of channel: enhancement
Version: ESD
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DMT12H065LFDF-7 DIODES INCORPORATED DMT12H065LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.3A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.3A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel
Kind of channel: enhancement
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DMN29M9UFDF-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+11.45 грн
Мінімальне замовлення: 3000
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DMT3008LFDF-7 DIODES INCORPORATED DMT3008LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+23.41 грн
Мінімальне замовлення: 3000
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DMC3028LSD-13 DMC3028LSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4497431891BF&compId=DMC3028LSD-13.pdf?ci_sign=e8f4f73fbf9a37396b74d8238e18c8d368559d8a Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
On-state resistance: 0.028/0.025Ω
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 61 шт:
термін постачання 21-30 дні (днів)
10+46.48 грн
14+30.61 грн
Мінімальне замовлення: 10
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DMP3028LK3-13 DMP3028LK3-13 DIODES INCORPORATED DMP3028LK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
11+40.46 грн
13+32.53 грн
100+22.62 грн
250+19.34 грн
500+17.26 грн
1000+15.59 грн
2500+14.07 грн
Мінімальне замовлення: 11
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DMP2035UFCL-7 DIODES INCORPORATED DMP2035UFCL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFDF-13 DIODES INCORPORATED DMP2035UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UQ-7 DMP2035UQ-7 DIODES INCORPORATED DMP2035U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UTS-13 DIODES INCORPORATED ds31940.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
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DMP2035UVT-13 DMP2035UVT-13 DIODES INCORPORATED DMP2035UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UVTQ-13 DMP2035UVTQ-13 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UVTQ-7 DMP2035UVTQ-7 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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SD103CW-13-F SD103CW-13-F DIODES INCORPORATED SD103AW-SD103CW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.35A; 10ns; 367mW
Mounting: SMD
Capacitance: 28pF
Reverse recovery time: 10ns
Load current: 0.35A
Power dissipation: 367mW
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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SD103CWS-7-F SD103CWS-7-F DIODES INCORPORATED SD103AWS_SD103CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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1SMB5939B-13 1SMB5939B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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SDM1M40LP8-7 DIODES INCORPORATED SDM1M40LP8.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
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SDM1M40LP8Q-7 DIODES INCORPORATED SDM1M40LP8Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Application: automotive industry
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SDT20A120CT SDT20A120CT DIODES INCORPORATED SDT20A120CT-SDT20A120CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
9+48.20 грн
12+33.65 грн
Мінімальне замовлення: 9
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DT2042-04SO-7 DIODES INCORPORATED DT2042-04SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: universal
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DT2042-04TS-7 DIODES INCORPORATED DT2042-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
Application: HDMI
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SDT20A100CT DIODES INCORPORATED SDT20A100CT-SDT20A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
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SDT20B100D1-13 DIODES INCORPORATED SDT20B100D1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
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DGTD120T25S1PT DGTD120T25S1PT DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983D0C969BA50C143&compId=DGTD120T25S1PT.pdf?ci_sign=7251f7e9e40b293f31ad3ba94c6ca527db53ec83 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 110ns
Gate charge: 204nC
Turn-off time: 367ns
Gate-emitter voltage: ±20V
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BAV20WS-7-F BAV20WS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797ACFCFD0C270748&compId=BAV19WS_BAV21WS.pdf?ci_sign=4a6c73c6a0d7bba03a4623d278fbd4b73c2ff2a0 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
на замовлення 3547 шт:
термін постачання 21-30 дні (днів)
50+8.61 грн
55+7.35 грн
59+6.79 грн
75+5.39 грн
100+4.81 грн
250+4.06 грн
500+3.51 грн
1000+2.99 грн
2500+2.33 грн
Мінімальне замовлення: 50
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BAV20W-7-F BAV20W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B5A289EDC5EFA8&compId=BAV21W-DTE.pdf?ci_sign=79b0fbbe391ec181366f1a350ca16e01fc68a233 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
21+19.18 грн
Мінімальне замовлення: 21
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DXTN5820DFDB-7 DIODES INCORPORATED DXTN5820DFDB.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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MURS160-13-F MURS160-13-F DIODES INCORPORATED MURS140-MURS160.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
19+23.24 грн
27+15.19 грн
100+10.47 грн
150+9.75 грн
Мінімальне замовлення: 19
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MURS140-13-F DIODES INCORPORATED MURS140-MURS160.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)
17+26.68 грн
23+17.90 грн
100+13.91 грн
500+11.67 грн
1000+10.71 грн
Мінімальне замовлення: 17
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AP31251W6-7 DIODES INCORPORATED AP31251.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; 10÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 60...70kHz
Supply voltage: 10...25V
Duty cycle factor: 70...80%
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AP2181SG-13 AP2181SG-13 DIODES INCORPORATED AP2181_91.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
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DGD2181S8-13 DIODES INCORPORATED DGD2181.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Pulse fall time: 35ns
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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ZUMT618TA DIODES INCORPORATED ZUMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1.25A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.25A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 4A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 210MHz
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DMP10H400SK3-13 DMP10H400SK3-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E026A349B3B8BF&compId=DMP10H400SK3.pdf?ci_sign=336e53a58952b0094da71bf55470e91163f04035 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2108 шт:
термін постачання 21-30 дні (днів)
13+34.43 грн
14+29.41 грн
25+26.54 грн
100+19.18 грн
250+15.19 грн
Мінімальне замовлення: 13
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SMAJ18CA-13-F SMAJ18CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1533 шт:
термін постачання 21-30 дні (днів)
25+17.22 грн
29+14.07 грн
33+12.15 грн
39+10.31 грн
100+6.71 грн
500+4.88 грн
1000+4.48 грн
Мінімальне замовлення: 25
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SMAJ18CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ33A-13-F SMCJ33A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMHT6016LFJ-13 DIODES INCORPORATED DMHT6016LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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APX823-29W5G-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98597D9A0B0A238BF&compId=APX823_824_825A.pdf?ci_sign=e58b2230c8107c9624693080d4b2b19f291b9803
APX823-29W5G-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT25
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.93V
Active logical level: low
Kind of package: reel; tape
Operating temperature: -40...85°C
на замовлення 890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.54 грн
20+20.78 грн
22+18.46 грн
26+15.83 грн
100+13.19 грн
250+12.07 грн
500+11.43 грн
Мінімальне замовлення: 16
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DMN2005UFG-7 DMN2005UFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 14A
Pulsed drain current: 130A
Power dissipation: 2.27W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2021UFDF-7 DMP2021UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Pulsed drain current: -60A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1009UFDF-7 DMP1009UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -70A
Power dissipation: 2W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDF-7 DMP3026SFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1004UFDF-7 DMN1004UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 12A
Pulsed drain current: 70A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1008UFDF-7 DMN1008UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2025UFDF-7 DMN2025UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 30A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Pulsed drain current: 30A
Power dissipation: 1.6W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3016LFDF-7 DMN3016LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 50A; 0.47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 0.47W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3042LFDF-7 DMN3042LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1005UFDF-7 DMP1005UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -10.3A
Pulsed drain current: -70A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP1012UFDF-7 DMP1012UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12.6A
Pulsed drain current: -55A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2023UFDF-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E05FA6A79B78BF&compId=DMP2023UFDF.pdf?ci_sign=912fb07fa6c93dc48ed1765d781a9b2e128bee68
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFDF-7 DMP2035UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2040UFDF-7 DMP2040UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.9A
Pulsed drain current: -35A
Power dissipation: 0.8W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP6110SFDF-7 DMP6110SFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT5015LFDF-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 7.3A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 7.3A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT6013LFDF-7 DMT6013LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT6016LFDF-7 DMT6016LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.9A
Pulsed drain current: 60A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LFDF-7 DMN10H220LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT10H032LFDF-7 DMT10H032LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 40A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 40A
Power dissipation: 1.1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT10H072LFDF-7 DMT10H072LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 1.1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT12H060LFDF-7 DMT12H060LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.4A; Idm: 20A; 1.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.4A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: 7 inch reel
Kind of channel: enhancement
Version: ESD
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DMT12H065LFDF-7 DMT12H065LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 4.3A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 4.3A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel
Kind of channel: enhancement
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DMN29M9UFDF-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+11.45 грн
Мінімальне замовлення: 3000
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DMT3008LFDF-7 DMT3008LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+23.41 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMC3028LSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4497431891BF&compId=DMC3028LSD-13.pdf?ci_sign=e8f4f73fbf9a37396b74d8238e18c8d368559d8a
DMC3028LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
On-state resistance: 0.028/0.025Ω
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 61 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+46.48 грн
14+30.61 грн
Мінімальне замовлення: 10
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DMP3028LK3-13 DMP3028LK3.pdf
DMP3028LK3-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.46 грн
13+32.53 грн
100+22.62 грн
250+19.34 грн
500+17.26 грн
1000+15.59 грн
2500+14.07 грн
Мінімальне замовлення: 11
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DMP2035UFCL-7 DMP2035UFCL.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFDF-13 DMP2035UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UQ-7 DMP2035U.pdf
DMP2035UQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UTS-13 ds31940.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
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DMP2035UVT-13 DMP2035UVT.pdf
DMP2035UVT-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UVTQ-13 DMP2035UVTQ.pdf
DMP2035UVTQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UVTQ-7 DMP2035UVTQ.pdf
DMP2035UVTQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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SD103CW-13-F SD103AW-SD103CW.pdf
SD103CW-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.35A; 10ns; 367mW
Mounting: SMD
Capacitance: 28pF
Reverse recovery time: 10ns
Load current: 0.35A
Power dissipation: 367mW
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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SD103CWS-7-F SD103AWS_SD103CWS.pdf
SD103CWS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Power dissipation: 0.2W
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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1SMB5939B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5939B-13
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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SDM1M40LP8-7 SDM1M40LP8.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
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SDM1M40LP8Q-7 SDM1M40LP8Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN1608-2; SMD; 40V; 1A; 8.4ns
Type of diode: Schottky rectifying
Case: U-DFN1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 25pF
Max. forward voltage: 0.66V
Leakage current: 0.8mA
Max. forward impulse current: 8A
Reverse recovery time: 8.4ns
Kind of package: reel; tape
Application: automotive industry
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SDT20A120CT SDT20A120CT-SDT20A120CTFP.pdf
SDT20A120CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+48.20 грн
12+33.65 грн
Мінімальне замовлення: 9
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DT2042-04SO-7 DT2042-04SO.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: universal
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DT2042-04TS-7 DT2042-04TS.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
Application: HDMI
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SDT20A100CT SDT20A100CT-SDT20A100CTFP.pdf
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
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SDT20B100D1-13 SDT20B100D1.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
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DGTD120T25S1PT pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983D0C969BA50C143&compId=DGTD120T25S1PT.pdf?ci_sign=7251f7e9e40b293f31ad3ba94c6ca527db53ec83
DGTD120T25S1PT
Виробник: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 110ns
Gate charge: 204nC
Turn-off time: 367ns
Gate-emitter voltage: ±20V
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BAV20WS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE797ACFCFD0C270748&compId=BAV19WS_BAV21WS.pdf?ci_sign=4a6c73c6a0d7bba03a4623d278fbd4b73c2ff2a0
BAV20WS-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
на замовлення 3547 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.61 грн
55+7.35 грн
59+6.79 грн
75+5.39 грн
100+4.81 грн
250+4.06 грн
500+3.51 грн
1000+2.99 грн
2500+2.33 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAV20W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B5A289EDC5EFA8&compId=BAV21W-DTE.pdf?ci_sign=79b0fbbe391ec181366f1a350ca16e01fc68a233
BAV20W-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+19.18 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DXTN5820DFDB-7 DXTN5820DFDB.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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MURS160-13-F MURS140-MURS160.pdf
MURS160-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+23.24 грн
27+15.19 грн
100+10.47 грн
150+9.75 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
MURS140-13-F MURS140-MURS160.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.68 грн
23+17.90 грн
100+13.91 грн
500+11.67 грн
1000+10.71 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AP31251W6-7 AP31251.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; 10÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 60...70kHz
Supply voltage: 10...25V
Duty cycle factor: 70...80%
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AP2181SG-13 AP2181_91.pdf
AP2181SG-13
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
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DGD2181S8-13 DGD2181.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Pulse fall time: 35ns
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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ZUMT618TA ZUMT618.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1.25A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.25A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 4A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 210MHz
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DMP10H400SK3-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E026A349B3B8BF&compId=DMP10H400SK3.pdf?ci_sign=336e53a58952b0094da71bf55470e91163f04035
DMP10H400SK3-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.43 грн
14+29.41 грн
25+26.54 грн
100+19.18 грн
250+15.19 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMAJ18CA-13-F SMAJ_ser.pdf
SMAJ18CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1533 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.22 грн
29+14.07 грн
33+12.15 грн
39+10.31 грн
100+6.71 грн
500+4.88 грн
1000+4.48 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ18CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ33A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ33A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMHT6016LFJ-13 DMHT6016LFJ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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