Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74552) > Сторінка 1238 з 1243
Фото | Назва | Виробник | Інформація |
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DMP3056L-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Pulsed drain current: -20A Power dissipation: 1.38W Case: SOT23 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 11.8nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP3056LSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.8A Pulsed drain current: -24A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 13.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
ZXTD2090E6TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 1A Power dissipation: 1.7W Case: SOT26 Pulsed collector current: 2A Current gain: 20...450 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 215MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DDZ24ASF-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMN2028UVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Pulsed drain current: 40A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMN2028UFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 18nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMN2028UFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 18nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMN2028UFDH-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7A Pulsed drain current: 40A Power dissipation: 1.5W Case: V-DFN3030-8 Gate-source voltage: ±12V On-state resistance: 36mΩ Mounting: SMD Gate charge: 8.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMN2028UFU-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.9A Pulsed drain current: 40A Power dissipation: 1.8W Case: U-DFN2030-6 Gate-source voltage: ±10V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74LVC2G00HD4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC Type of integrated circuit: digital Number of channels: 2 Kind of gate: NAND Kind of output: push-pull Kind of package: reel; tape Case: X2-DFN2010-8 Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Supply voltage: 1.65...5.5V DC Family: LVC Number of inputs: 2 Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74LVC2G00HK3-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC Type of integrated circuit: digital Number of channels: 2 Kind of gate: NAND Kind of output: push-pull Kind of package: reel; tape Case: X2-DFN1410-8 Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Supply voltage: 1.65...5.5V DC Family: LVC Number of inputs: 2 Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMAJ14CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3535 шт: термін постачання 21-30 дні (днів) |
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BCP55TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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74AHC1G00QW5-7 | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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AP22913CN4-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: X1-WLB0909-4 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MMDT3946Q-7R | DIODES INCORPORATED |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAS40-06Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.35W Reverse recovery time: 5ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS40-06Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.35W Reverse recovery time: 5ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS40-06T-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.15W Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBTA06-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 6327 шт: термін постачання 21-30 дні (днів) |
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AP2552AW6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
на замовлення 1336 шт: термін постачання 21-30 дні (днів) |
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AP2552FDC-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN2020-6 Type C On-state resistance: 80mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ZXMC10A816N8TC | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 100/-100V Drain current: 2.2/-2.1A Pulsed drain current: 9.4A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.23/0.235Ω Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMC10A816N8TA | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 100/-100V Drain current: 2.2/-2.1A Pulsed drain current: 9.4A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.23/0.235Ω Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMC4559DN8TA | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 3.6/-2.6A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
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ZXMC4559DN8TC | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 3.9/-4.7A Power dissipation: 2.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.055/0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PD3S120L-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 49pF Leakage current: 30mA Max. forward voltage: 0.42V Load current: 1A Max. off-state voltage: 20V Max. forward impulse current: 33A Case: PowerDI®323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PD3S120LQ-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 10µA Max. forward voltage: 0.42V Load current: 1A Max. off-state voltage: 20V Max. forward impulse current: 33A Case: PowerDI®323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FZT690BTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 3A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 1000pcs. Frequency: 150MHz |
на замовлення 659 шт: термін постачання 21-30 дні (днів) |
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FCX690BTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 2A Power dissipation: 1W Case: SOT89 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 1000pcs. Frequency: 150MHz |
на замовлення 1004 шт: термін постачання 21-30 дні (днів) |
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DXT690BP5-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 3A Power dissipation: 3.2W Case: PowerDI®5 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 6A Current gain: 60...700 Quantity in set/package: 5000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DXT690BP5Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 3A Power dissipation: 3.2W Case: PowerDI®5 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 6A Current gain: 60...700 Quantity in set/package: 5000pcs. Frequency: 150MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FZT690BQTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 3A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 6A Current gain: 50...500 Quantity in set/package: 1000pcs. Frequency: 150MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMC1028UFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; 12V; 6A; 1.36W; U-DFN2020-6; double Type of transistor: N/P-MOSFET Technology: MOSFET Drain-source voltage: 12V Drain current: 6A Power dissipation: 1.36W Case: U-DFN2020-6 Gate-source voltage: 8V On-state resistance: 17mΩ Mounting: SMD Gate charge: 18.5nC Kind of channel: enhancement Semiconductor structure: double Operating temperature: -55...150°C |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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DF02S-T | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 969 шт: термін постачання 21-30 дні (днів) |
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ZXTP2008ZTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 5.5A Power dissipation: 1.5W Case: SOT89 Current gain: 100...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 110MHz |
на замовлення 845 шт: термін постачання 21-30 дні (днів) |
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SBRT15U100SP5-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A Case: PowerDI®5 Type of diode: Schottky rectifying Kind of package: reel; tape Technology: Trench SBR® Mounting: SMD Max. forward voltage: 0.7V Max. off-state voltage: 100V Load current: 15A Max. forward impulse current: 250A Semiconductor structure: single diode |
на замовлення 1591 шт: термін постачання 21-30 дні (днів) |
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SBRT10U50SP5-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 10A Case: PowerDI®5 Type of diode: Schottky rectifying Kind of package: reel; tape Technology: Trench SBR® Mounting: SMD Leakage current: 0.1mA Max. forward voltage: 0.45V Max. off-state voltage: 50V Load current: 10A Max. forward impulse current: 0.32kA Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT15U100SP5-13D | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A Case: PowerDI®5 Type of diode: Schottky rectifying Kind of package: reel; tape Technology: Trench SBR® Mounting: SMD Leakage current: 40µA Max. forward voltage: 0.7V Max. off-state voltage: 100V Load current: 15A Max. forward impulse current: 250A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT15U50SP5-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A Case: PowerDI®5 Type of diode: Schottky rectifying Kind of package: reel; tape Technology: Trench SBR® Mounting: SMD Max. forward voltage: 0.47V Max. off-state voltage: 50V Load current: 15A Max. forward impulse current: 290A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT10U50SP5-13D | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 10A; PowerDI®5; Ufmax: 0.4V; Ifsm: 320A Case: PowerDI®5 Type of diode: rectifying Kind of package: reel; tape Technology: SBR® Mounting: SMD Max. forward voltage: 0.4V Max. off-state voltage: 50V Load current: 10A Max. forward impulse current: 0.32kA Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT10U60D1-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A Case: TO252/DPAK Type of diode: Schottky rectifying Kind of package: reel Technology: Trench SBR® Mounting: SMD Leakage current: 80µA Max. forward voltage: 0.52V Max. off-state voltage: 60V Load current: 10A Max. forward impulse current: 140A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT15U100SP5-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A Case: PowerDI®5 Type of diode: Schottky rectifying Kind of package: reel; tape Technology: Trench SBR® Mounting: SMD Leakage current: 40µA Max. forward voltage: 0.7V Max. off-state voltage: 100V Load current: 15A Max. forward impulse current: 250A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT15U50SP5-13D | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A Case: PowerDI®5 Type of diode: Schottky rectifying Kind of package: reel; tape Technology: Trench SBR® Mounting: SMD Leakage current: 170µA Max. forward voltage: 0.47V Max. off-state voltage: 50V Load current: 15A Max. forward impulse current: 290A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT15U50SP5-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A Case: PowerDI®5 Type of diode: Schottky rectifying Kind of package: reel; tape Technology: Trench SBR® Mounting: SMD Leakage current: 170µA Max. forward voltage: 0.47V Max. off-state voltage: 50V Load current: 15A Max. forward impulse current: 290A Semiconductor structure: single diode |
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DMP2200UFCL-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W Type of transistor: P-MOSFET Mounting: SMD Case: U-DFN1616-6 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -8A Drain current: -1.2A Gate charge: 2.2nC On-state resistance: 0.65Ω Power dissipation: 1.58W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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BAS521-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; Ufmax: 1.1V Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD523 Kind of package: reel; tape Max. forward voltage: 1.1V |
на замовлення 1830 шт: термін постачання 21-30 дні (днів) |
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BAS521Q-13 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD523 Kind of package: reel; tape Application: automotive industry |
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BAS521LP-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 325V; 0.4A; 50ns; X1-DFN1006-2; Ufmax: 1.1V Type of diode: switching Mounting: SMD Max. off-state voltage: 325V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: X1-DFN1006-2 Kind of package: reel; tape Max. forward voltage: 1.1V Max. forward impulse current: 3A Capacitance: 5pF |
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ZXTR2112F-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 50mA Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Tolerance: ±10% Number of channels: 1 Input voltage: 15...60V |
на замовлення 2973 шт: термін постачання 21-30 дні (днів) |
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ZXTR2112FQ-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 50mA Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Tolerance: ±10% Number of channels: 1 Application: automotive industry Input voltage: 15...60V |
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74LVC86AT14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
на замовлення 2282 шт: термін постачання 21-30 дні (днів) |
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74LVC1G58FW4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6 Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Kind of integrated circuit: buffer; inverter |
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74LVC1G58FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6 Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Kind of integrated circuit: buffer; inverter |
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74LVC1G58W6-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Kind of integrated circuit: buffer; inverter |
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AP7341-25FS4-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; X2DFN4; SMD Kind of voltage regulator: fixed; LDO; linear Integrated circuit features: shutdown mode control input Mounting: SMD Type of integrated circuit: voltage regulator Case: X2DFN4 Operating temperature: -40...85°C Output current: 0.3A Voltage drop: 0.3V Number of channels: 1 Tolerance: ±1.5% Input voltage: 1.7...5.25V Output voltage: 2.5V Manufacturer series: AP7341 Kind of package: reel; tape |
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ZXTN4004KTC-01 | DIODES INCORPORATED |
Category: Transistors - Unclassified Description: ZXTN4004KTC-01 |
на замовлення 7500 шт: термін постачання 21-30 дні (днів) |
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GBU401 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | ||||||||||||||
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ZXTN25100DFHTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2.5A Power dissipation: 1.81W Case: SOT23 Current gain: 20...900 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 175MHz |
на замовлення 381 шт: термін постачання 21-30 дні (днів) |
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AP2511MP-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: MSOP8EP Kind of package: reel; tape Supply voltage: 2.7...5.5V DC On-state resistance: 70mΩ Active logical level: high |
на замовлення 2300 шт: термін постачання 21-30 дні (днів) |
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DMP3056L-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3056LSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXTD2090E6TA |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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DDZ24ASF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
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DMN2028UVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDH-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFU-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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74LVC2G00HD4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN2010-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN2010-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
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74LVC2G00HK3-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
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SMAJ14CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3535 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 16.20 грн |
32+ | 12.51 грн |
39+ | 10.37 грн |
100+ | 4.92 грн |
198+ | 4.70 грн |
545+ | 4.44 грн |
BCP55TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 44 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
32+ | 12.67 грн |
74AHC1G00QW5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.49 грн |
AP22913CN4-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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MMDT3946Q-7R |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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BAS40-06Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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BAS40-06Q-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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BAS40-06T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
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MMBTA06-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 6327 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.94 грн |
49+ | 8.23 грн |
74+ | 5.35 грн |
100+ | 4.43 грн |
500+ | 2.92 грн |
610+ | 1.52 грн |
1678+ | 1.44 грн |
AP2552AW6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
на замовлення 1336 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.25 грн |
16+ | 25.33 грн |
18+ | 22.56 грн |
25+ | 19.40 грн |
68+ | 13.86 грн |
186+ | 13.06 грн |
AP2552FDC-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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ZXMC10A816N8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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ZXMC10A816N8TA |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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ZXMC4559DN8TA |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 119.37 грн |
10+ | 74.42 грн |
25+ | 61.60 грн |
33+ | 28.74 грн |
90+ | 27.16 грн |
ZXMC4559DN8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.9/-4.7A
Power dissipation: 2.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.9/-4.7A
Power dissipation: 2.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PD3S120L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 33A
Case: PowerDI®323
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 33A
Case: PowerDI®323
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PD3S120LQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 0.42V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 33A
Case: PowerDI®323
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 0.42V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 33A
Case: PowerDI®323
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FZT690BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
на замовлення 659 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.50 грн |
10+ | 46.47 грн |
42+ | 22.17 грн |
116+ | 20.98 грн |
FCX690BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 2A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 2A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
на замовлення 1004 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.19 грн |
15+ | 26.68 грн |
76+ | 12.27 грн |
208+ | 11.64 грн |
DXT690BP5-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3.2W
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3.2W
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
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DXT690BP5Q-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3.2W
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3.2W
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
Application: automotive industry
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FZT690BQTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 50...500
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 50...500
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
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DMC1028UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 12V; 6A; 1.36W; U-DFN2020-6; double
Type of transistor: N/P-MOSFET
Technology: MOSFET
Drain-source voltage: 12V
Drain current: 6A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: 8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 18.5nC
Kind of channel: enhancement
Semiconductor structure: double
Operating temperature: -55...150°C
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 12V; 6A; 1.36W; U-DFN2020-6; double
Type of transistor: N/P-MOSFET
Technology: MOSFET
Drain-source voltage: 12V
Drain current: 6A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: 8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 18.5nC
Kind of channel: enhancement
Semiconductor structure: double
Operating temperature: -55...150°C
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 24.38 грн |
DF02S-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 969 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.63 грн |
15+ | 27.71 грн |
100+ | 15.99 грн |
102+ | 9.26 грн |
278+ | 8.71 грн |
ZXTP2008ZTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
на замовлення 845 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 76.74 грн |
10+ | 44.89 грн |
34+ | 27.79 грн |
92+ | 26.28 грн |
500+ | 25.33 грн |
SBRT15U100SP5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
на замовлення 1591 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.03 грн |
10+ | 47.58 грн |
29+ | 32.78 грн |
78+ | 31.04 грн |
500+ | 29.85 грн |
SBRT10U50SP5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 10A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.45V
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 0.32kA
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 10A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.45V
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 0.32kA
Semiconductor structure: single diode
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SBRT15U100SP5-13D |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 40µA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 40µA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
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SBRT15U50SP5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
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SBRT10U50SP5-13D |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 10A; PowerDI®5; Ufmax: 0.4V; Ifsm: 320A
Case: PowerDI®5
Type of diode: rectifying
Kind of package: reel; tape
Technology: SBR®
Mounting: SMD
Max. forward voltage: 0.4V
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 0.32kA
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 10A; PowerDI®5; Ufmax: 0.4V; Ifsm: 320A
Case: PowerDI®5
Type of diode: rectifying
Kind of package: reel; tape
Technology: SBR®
Mounting: SMD
Max. forward voltage: 0.4V
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 0.32kA
Semiconductor structure: single diode
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SBRT10U60D1-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Case: TO252/DPAK
Type of diode: Schottky rectifying
Kind of package: reel
Technology: Trench SBR®
Mounting: SMD
Leakage current: 80µA
Max. forward voltage: 0.52V
Max. off-state voltage: 60V
Load current: 10A
Max. forward impulse current: 140A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Case: TO252/DPAK
Type of diode: Schottky rectifying
Kind of package: reel
Technology: Trench SBR®
Mounting: SMD
Leakage current: 80µA
Max. forward voltage: 0.52V
Max. off-state voltage: 60V
Load current: 10A
Max. forward impulse current: 140A
Semiconductor structure: single diode
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SBRT15U100SP5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 40µA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 40µA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
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SBRT15U50SP5-13D |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 170µA
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 170µA
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
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SBRT15U50SP5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 170µA
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 170µA
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
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DMP2200UFCL-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Type of transistor: P-MOSFET
Mounting: SMD
Case: U-DFN1616-6
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
On-state resistance: 0.65Ω
Power dissipation: 1.58W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Type of transistor: P-MOSFET
Mounting: SMD
Case: U-DFN1616-6
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
On-state resistance: 0.65Ω
Power dissipation: 1.58W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS521-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Kind of package: reel; tape
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Kind of package: reel; tape
Max. forward voltage: 1.1V
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
53+ | 7.60 грн |
68+ | 5.91 грн |
100+ | 5.27 грн |
245+ | 3.81 грн |
672+ | 3.60 грн |
1000+ | 3.54 грн |
BAS521Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Kind of package: reel; tape
Application: automotive industry
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BAS521LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 325V; 0.4A; 50ns; X1-DFN1006-2; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 325V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 3A
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 325V; 0.4A; 50ns; X1-DFN1006-2; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 325V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 3A
Capacitance: 5pF
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ZXTR2112F-7 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...60V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...60V
на замовлення 2973 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 28.14 грн |
19+ | 21.53 грн |
21+ | 19.00 грн |
25+ | 16.07 грн |
72+ | 13.06 грн |
196+ | 12.35 грн |
ZXTR2112FQ-7 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Application: automotive industry
Input voltage: 15...60V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Application: automotive industry
Input voltage: 15...60V
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74LVC86AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
на замовлення 2282 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.96 грн |
21+ | 19.32 грн |
100+ | 12.27 грн |
168+ | 5.54 грн |
460+ | 5.23 грн |
74LVC1G58FW4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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74LVC1G58FZ4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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74LVC1G58W6-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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AP7341-25FS4-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; X2DFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: X2DFN4
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 2.5V
Manufacturer series: AP7341
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; X2DFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: X2DFN4
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 2.5V
Manufacturer series: AP7341
Kind of package: reel; tape
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ZXTN4004KTC-01 |
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 13.56 грн |
GBU401 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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ZXTN25100DFHTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2.5A
Power dissipation: 1.81W
Case: SOT23
Current gain: 20...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 175MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2.5A
Power dissipation: 1.81W
Case: SOT23
Current gain: 20...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 175MHz
на замовлення 381 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.24 грн |
10+ | 41.33 грн |
25+ | 32.62 грн |
46+ | 20.58 грн |
125+ | 19.48 грн |
250+ | 18.68 грн |
AP2511MP-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8EP
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8EP
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Active logical level: high
на замовлення 2300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.46 грн |
28+ | 14.33 грн |
31+ | 12.90 грн |
88+ | 10.69 грн |
240+ | 10.05 грн |
500+ | 9.74 грн |