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FZT956TA FZT956TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=E1FC156684ACC4F1A303005056AB0C4F&compId=FZT9556.pdf?ci_sign=c067c9625cffe9c89deda90f074fb9a4781106da Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
на замовлення 456 шт:
термін постачання 21-30 дні (днів)
5+103.17 грн
10+60.25 грн
26+36.50 грн
71+34.52 грн
250+33.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FZT956QTA DIODES INCORPORATED FZT956.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 5A
Current gain: 10...300
Application: automotive industry
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DMP3056LSSQ-13 DMP3056LSSQ-13 DIODES INCORPORATED DMP3056LSSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP3056LSS-13 DMP3056LSS-13 DIODES INCORPORATED ds31419.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3056L-13 DMP3056L-13 DIODES INCORPORATED DMP3056L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3056LSDQ-13 DMP3056LSDQ-13 DIODES INCORPORATED DMP3056LSDQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXTD2090E6TA DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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DDZ24ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
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DMN2028UVT-7 DMN2028UVT-7 DIODES INCORPORATED DMN2028UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDF-13 DIODES INCORPORATED DMN2028UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDF-7 DIODES INCORPORATED DMN2028UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDH-7 DIODES INCORPORATED DMN2028UFDH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFU-7 DIODES INCORPORATED DMN2028UFU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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74LVC2G00HD4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB26920D3&compId=74LVC2G00.pdf?ci_sign=93257c0c1f895e3daaef546cef1963c0a1808c92 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN2010-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
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74LVC2G00HK3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB26A20D3&compId=74LVC2G00.pdf?ci_sign=c000ec93a58b7f027f4a452ca1be98434f0b43db Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
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SMAJ14CA-13-F SMAJ14CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3535 шт:
термін постачання 21-30 дні (днів)
27+16.20 грн
32+12.51 грн
39+10.37 грн
100+4.92 грн
198+4.70 грн
545+4.44 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BCP55TA BCP55TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
23+18.76 грн
32+12.67 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
74AHC1G00QW5-7 DIODES INCORPORATED 74AHC1G00Q.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+4.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AP22913CN4-7 DIODES INCORPORATED AP22913.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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MMDT3946Q-7R DIODES INCORPORATED MMDT3946Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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BAS40-06Q-7-F BAS40-06Q-7-F DIODES INCORPORATED BAS40_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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BAS40-06Q-13-F BAS40-06Q-13-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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BAS40-06T-7-F BAS40-06T-7-F DIODES INCORPORATED BAS40T_-04T_-05T_-06T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
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MMBTA06-7-F MMBTA06-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE996BF73E184E9F8BF&compId=MMBTA05_06.pdf?ci_sign=0d4cdefb1e6991c001427b5eb4ad8e4960eb1f18 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 6327 шт:
термін постачання 21-30 дні (днів)
36+11.94 грн
49+8.23 грн
74+5.35 грн
100+4.43 грн
500+2.92 грн
610+1.52 грн
1678+1.44 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP2552AW6-7 AP2552AW6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED8839727D5E0D30A18&compId=AP255x.pdf?ci_sign=548c7692904889236f1e909fa7e34cbf6a357229 Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
на замовлення 1336 шт:
термін постачання 21-30 дні (днів)
13+33.25 грн
16+25.33 грн
18+22.56 грн
25+19.40 грн
68+13.86 грн
186+13.06 грн
Мінімальне замовлення: 13
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AP2552FDC-7 DIODES INCORPORATED AP255x.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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ZXMC10A816N8TC ZXMC10A816N8TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D5FD5AA9760CE&compId=ZXMC10A816N8.pdf?ci_sign=4dcc964adf5f7787e1ca8598dedb1ff9e01faf4c Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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ZXMC10A816N8TA ZXMC10A816N8TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D5FD5AA9760CE&compId=ZXMC10A816N8.pdf?ci_sign=4dcc964adf5f7787e1ca8598dedb1ff9e01faf4c Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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ZXMC4559DN8TA ZXMC4559DN8TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C30D27D74C4749&compId=ZXMC4559DN8.pdf?ci_sign=6dc7814dd543b44b19b056e7ec5289c548167779 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 21-30 дні (днів)
4+119.37 грн
10+74.42 грн
25+61.60 грн
33+28.74 грн
90+27.16 грн
Мінімальне замовлення: 4
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ZXMC4559DN8TC ZXMC4559DN8TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B8234F04D71BF&compId=ZXMC4559DN8TC.pdf?ci_sign=dcb7aeca60d7c533da77278259cf0e804d2aa21e Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.9/-4.7A
Power dissipation: 2.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PD3S120L-7 DIODES INCORPORATED ds30793.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 33A
Case: PowerDI®323
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PD3S120LQ-7 DIODES INCORPORATED PD3S120LQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 0.42V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 33A
Case: PowerDI®323
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FZT690BTA FZT690BTA DIODES INCORPORATED FZT690B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
на замовлення 659 шт:
термін постачання 21-30 дні (днів)
7+66.50 грн
10+46.47 грн
42+22.17 грн
116+20.98 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FCX690BTA FCX690BTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C5552E30090749&compId=FCX690B.pdf?ci_sign=56ce3cd2fd89abb8c2fc5773b55fcca327b2b06e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 2A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
на замовлення 1004 шт:
термін постачання 21-30 дні (днів)
10+45.19 грн
15+26.68 грн
76+12.27 грн
208+11.64 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DXT690BP5-13 DIODES INCORPORATED ds31801.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3.2W
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
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DXT690BP5Q-13 DIODES INCORPORATED ds31801.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3.2W
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
Application: automotive industry
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FZT690BQTA DIODES INCORPORATED FZT690B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 50...500
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
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DMC1028UFDB-7 DIODES INCORPORATED DMC1028UFDB.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 12V; 6A; 1.36W; U-DFN2020-6; double
Type of transistor: N/P-MOSFET
Technology: MOSFET
Drain-source voltage: 12V
Drain current: 6A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: 8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 18.5nC
Kind of channel: enhancement
Semiconductor structure: double
Operating temperature: -55...150°C
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+24.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DF02S-T DF02S-T DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
10+42.63 грн
15+27.71 грн
100+15.99 грн
102+9.26 грн
278+8.71 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ZXTP2008ZTA ZXTP2008ZTA DIODES INCORPORATED ZXTP2008Z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
на замовлення 845 шт:
термін постачання 21-30 дні (днів)
6+76.74 грн
10+44.89 грн
34+27.79 грн
92+26.28 грн
500+25.33 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SBRT15U100SP5-7 SBRT15U100SP5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EFA1E35626F6745&compId=SBRT15U100SP5.pdf?ci_sign=9c03364c16406e7d242ba6ddeb16737e65966d9b Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
на замовлення 1591 шт:
термін постачання 21-30 дні (днів)
6+75.03 грн
10+47.58 грн
29+32.78 грн
78+31.04 грн
500+29.85 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SBRT10U50SP5-13 DIODES INCORPORATED SBRT10U50SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 10A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.45V
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 0.32kA
Semiconductor structure: single diode
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SBRT15U100SP5-13D DIODES INCORPORATED SBRT15U100SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 40µA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
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SBRT15U50SP5-13 DIODES INCORPORATED SBRT15U50SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
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SBRT10U50SP5-13D DIODES INCORPORATED SBRT10U50SP5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 10A; PowerDI®5; Ufmax: 0.4V; Ifsm: 320A
Case: PowerDI®5
Type of diode: rectifying
Kind of package: reel; tape
Technology: SBR®
Mounting: SMD
Max. forward voltage: 0.4V
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 0.32kA
Semiconductor structure: single diode
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SBRT10U60D1-13 DIODES INCORPORATED SBRT10U60D1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Case: TO252/DPAK
Type of diode: Schottky rectifying
Kind of package: reel
Technology: Trench SBR®
Mounting: SMD
Leakage current: 80µA
Max. forward voltage: 0.52V
Max. off-state voltage: 60V
Load current: 10A
Max. forward impulse current: 140A
Semiconductor structure: single diode
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SBRT15U100SP5-13 DIODES INCORPORATED SBRT15U100SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 40µA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
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SBRT15U50SP5-13D DIODES INCORPORATED SBRT15U50SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 170µA
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
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SBRT15U50SP5-7 DIODES INCORPORATED SBRT15U50SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 170µA
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
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DMP2200UFCL-7 DIODES INCORPORATED DMP2200UFCL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Type of transistor: P-MOSFET
Mounting: SMD
Case: U-DFN1616-6
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
On-state resistance: 0.65Ω
Power dissipation: 1.58W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS521-7 BAS521-7 DIODES INCORPORATED ds32175.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Kind of package: reel; tape
Max. forward voltage: 1.1V
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)
39+11.08 грн
53+7.60 грн
68+5.91 грн
100+5.27 грн
245+3.81 грн
672+3.60 грн
1000+3.54 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BAS521Q-13 DIODES INCORPORATED BAS521Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Kind of package: reel; tape
Application: automotive industry
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BAS521LP-7 DIODES INCORPORATED BAS521LP.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 325V; 0.4A; 50ns; X1-DFN1006-2; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 325V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 3A
Capacitance: 5pF
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ZXTR2112F-7 ZXTR2112F-7 DIODES INCORPORATED ZXTR2112F.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...60V
на замовлення 2973 шт:
термін постачання 21-30 дні (днів)
16+28.14 грн
19+21.53 грн
21+19.00 грн
25+16.07 грн
72+13.06 грн
196+12.35 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
ZXTR2112FQ-7 DIODES INCORPORATED ZXTR2112FQ.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Application: automotive industry
Input voltage: 15...60V
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74LVC86AT14-13 74LVC86AT14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7119BD272C0D3&compId=74LVC86A.pdf?ci_sign=2f877c44a6e63087b299604b08457f1fb5ca7ade Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
на замовлення 2282 шт:
термін постачання 21-30 дні (днів)
13+34.96 грн
21+19.32 грн
100+12.27 грн
168+5.54 грн
460+5.23 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
74LVC1G58FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BBE0D3&compId=74LVC1G58.pdf?ci_sign=87534fb331da3d04c65c5947e9d7e6360e298fbe Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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74LVC1G58FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BCE0D3&compId=74LVC1G58.pdf?ci_sign=578b66d8f2cfa7421771c685f9b16c354d39914e Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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74LVC1G58W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BDE0D3&compId=74LVC1G58.pdf?ci_sign=307f14995eb1bf81294e62f421d1f16cf2b0a9a4 Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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AP7341-25FS4-7 DIODES INCORPORATED AP7341.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; X2DFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: X2DFN4
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 2.5V
Manufacturer series: AP7341
Kind of package: reel; tape
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FZT956TA pVersion=0046&contRep=ZT&docId=E1FC156684ACC4F1A303005056AB0C4F&compId=FZT9556.pdf?ci_sign=c067c9625cffe9c89deda90f074fb9a4781106da
FZT956TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
на замовлення 456 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+103.17 грн
10+60.25 грн
26+36.50 грн
71+34.52 грн
250+33.17 грн
Мінімальне замовлення: 5
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FZT956QTA FZT956.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 5A
Current gain: 10...300
Application: automotive industry
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DMP3056LSSQ-13 DMP3056LSSQ.pdf
DMP3056LSSQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP3056LSS-13 ds31419.pdf
DMP3056LSS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3056L-13 DMP3056L.pdf
DMP3056L-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3056LSDQ-13 DMP3056LSDQ.pdf
DMP3056LSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXTD2090E6TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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DDZ24ASF-7 ds31987.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
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DMN2028UVT-7 DMN2028UVT.pdf
DMN2028UVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDF-13 DMN2028UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDF-7 DMN2028UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDH-7 DMN2028UFDH.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFU-7 DMN2028UFU.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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74LVC2G00HD4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB26920D3&compId=74LVC2G00.pdf?ci_sign=93257c0c1f895e3daaef546cef1963c0a1808c92
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN2010-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
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74LVC2G00HK3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB26A20D3&compId=74LVC2G00.pdf?ci_sign=c000ec93a58b7f027f4a452ca1be98434f0b43db
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
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SMAJ14CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ14CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3535 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.20 грн
32+12.51 грн
39+10.37 грн
100+4.92 грн
198+4.70 грн
545+4.44 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BCP55TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046
BCP55TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.76 грн
32+12.67 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
74AHC1G00QW5-7 74AHC1G00Q.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+4.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AP22913CN4-7 AP22913.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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MMDT3946Q-7R MMDT3946Q.pdf
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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BAS40-06Q-7-F BAS40_-04_-05_-06.pdf
BAS40-06Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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BAS40-06Q-13-F
BAS40-06Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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BAS40-06T-7-F BAS40T_-04T_-05T_-06T.pdf
BAS40-06T-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
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MMBTA06-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE996BF73E184E9F8BF&compId=MMBTA05_06.pdf?ci_sign=0d4cdefb1e6991c001427b5eb4ad8e4960eb1f18
MMBTA06-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 6327 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.94 грн
49+8.23 грн
74+5.35 грн
100+4.43 грн
500+2.92 грн
610+1.52 грн
1678+1.44 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP2552AW6-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED8839727D5E0D30A18&compId=AP255x.pdf?ci_sign=548c7692904889236f1e909fa7e34cbf6a357229
AP2552AW6-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
на замовлення 1336 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.25 грн
16+25.33 грн
18+22.56 грн
25+19.40 грн
68+13.86 грн
186+13.06 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
AP2552FDC-7 AP255x.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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ZXMC10A816N8TC pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D5FD5AA9760CE&compId=ZXMC10A816N8.pdf?ci_sign=4dcc964adf5f7787e1ca8598dedb1ff9e01faf4c
ZXMC10A816N8TC
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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ZXMC10A816N8TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D5FD5AA9760CE&compId=ZXMC10A816N8.pdf?ci_sign=4dcc964adf5f7787e1ca8598dedb1ff9e01faf4c
ZXMC10A816N8TA
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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ZXMC4559DN8TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C30D27D74C4749&compId=ZXMC4559DN8.pdf?ci_sign=6dc7814dd543b44b19b056e7ec5289c548167779
ZXMC4559DN8TA
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+119.37 грн
10+74.42 грн
25+61.60 грн
33+28.74 грн
90+27.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ZXMC4559DN8TC pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B8234F04D71BF&compId=ZXMC4559DN8TC.pdf?ci_sign=dcb7aeca60d7c533da77278259cf0e804d2aa21e
ZXMC4559DN8TC
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.9/-4.7A
Power dissipation: 2.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PD3S120L-7 ds30793.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 33A
Case: PowerDI®323
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PD3S120LQ-7 PD3S120LQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 0.42V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 33A
Case: PowerDI®323
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FZT690BTA FZT690B.pdf
FZT690BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
на замовлення 659 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+66.50 грн
10+46.47 грн
42+22.17 грн
116+20.98 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FCX690BTA pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C5552E30090749&compId=FCX690B.pdf?ci_sign=56ce3cd2fd89abb8c2fc5773b55fcca327b2b06e
FCX690BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 2A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 1000pcs.
Frequency: 150MHz
на замовлення 1004 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.19 грн
15+26.68 грн
76+12.27 грн
208+11.64 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DXT690BP5-13 ds31801.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3.2W
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
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DXT690BP5Q-13 ds31801.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3.2W
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
Application: automotive industry
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FZT690BQTA FZT690B.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Current gain: 50...500
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
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DMC1028UFDB-7 DMC1028UFDB.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 12V; 6A; 1.36W; U-DFN2020-6; double
Type of transistor: N/P-MOSFET
Technology: MOSFET
Drain-source voltage: 12V
Drain current: 6A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: 8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 18.5nC
Kind of channel: enhancement
Semiconductor structure: double
Operating temperature: -55...150°C
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+24.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DF02S-T pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f
DF02S-T
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.63 грн
15+27.71 грн
100+15.99 грн
102+9.26 грн
278+8.71 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ZXTP2008ZTA ZXTP2008Z.pdf
ZXTP2008ZTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
на замовлення 845 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.74 грн
10+44.89 грн
34+27.79 грн
92+26.28 грн
500+25.33 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SBRT15U100SP5-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EFA1E35626F6745&compId=SBRT15U100SP5.pdf?ci_sign=9c03364c16406e7d242ba6ddeb16737e65966d9b
SBRT15U100SP5-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
на замовлення 1591 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+75.03 грн
10+47.58 грн
29+32.78 грн
78+31.04 грн
500+29.85 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SBRT10U50SP5-13 SBRT10U50SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 10A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.45V
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 0.32kA
Semiconductor structure: single diode
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SBRT15U100SP5-13D SBRT15U100SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 40µA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
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SBRT15U50SP5-13 SBRT15U50SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
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SBRT10U50SP5-13D SBRT10U50SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 10A; PowerDI®5; Ufmax: 0.4V; Ifsm: 320A
Case: PowerDI®5
Type of diode: rectifying
Kind of package: reel; tape
Technology: SBR®
Mounting: SMD
Max. forward voltage: 0.4V
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 0.32kA
Semiconductor structure: single diode
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SBRT10U60D1-13 SBRT10U60D1.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Case: TO252/DPAK
Type of diode: Schottky rectifying
Kind of package: reel
Technology: Trench SBR®
Mounting: SMD
Leakage current: 80µA
Max. forward voltage: 0.52V
Max. off-state voltage: 60V
Load current: 10A
Max. forward impulse current: 140A
Semiconductor structure: single diode
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SBRT15U100SP5-13 SBRT15U100SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 100V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 40µA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 15A
Max. forward impulse current: 250A
Semiconductor structure: single diode
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SBRT15U50SP5-13D SBRT15U50SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 170µA
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
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SBRT15U50SP5-7 SBRT15U50SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Case: PowerDI®5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Technology: Trench SBR®
Mounting: SMD
Leakage current: 170µA
Max. forward voltage: 0.47V
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 290A
Semiconductor structure: single diode
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DMP2200UFCL-7 DMP2200UFCL.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Type of transistor: P-MOSFET
Mounting: SMD
Case: U-DFN1616-6
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
On-state resistance: 0.65Ω
Power dissipation: 1.58W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS521-7 ds32175.pdf
BAS521-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Kind of package: reel; tape
Max. forward voltage: 1.1V
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.08 грн
53+7.60 грн
68+5.91 грн
100+5.27 грн
245+3.81 грн
672+3.60 грн
1000+3.54 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BAS521Q-13 BAS521Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Kind of package: reel; tape
Application: automotive industry
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BAS521LP-7 BAS521LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 325V; 0.4A; 50ns; X1-DFN1006-2; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 325V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: X1-DFN1006-2
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 3A
Capacitance: 5pF
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ZXTR2112F-7 ZXTR2112F.pdf
ZXTR2112F-7
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...60V
на замовлення 2973 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.14 грн
19+21.53 грн
21+19.00 грн
25+16.07 грн
72+13.06 грн
196+12.35 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
ZXTR2112FQ-7 ZXTR2112FQ.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.05A; SOT23; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Application: automotive industry
Input voltage: 15...60V
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74LVC86AT14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7119BD272C0D3&compId=74LVC86A.pdf?ci_sign=2f877c44a6e63087b299604b08457f1fb5ca7ade
74LVC86AT14-13
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
на замовлення 2282 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.96 грн
21+19.32 грн
100+12.27 грн
168+5.54 грн
460+5.23 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
74LVC1G58FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BBE0D3&compId=74LVC1G58.pdf?ci_sign=87534fb331da3d04c65c5947e9d7e6360e298fbe
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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74LVC1G58FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BCE0D3&compId=74LVC1G58.pdf?ci_sign=578b66d8f2cfa7421771c685f9b16c354d39914e
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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74LVC1G58W6-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BDE0D3&compId=74LVC1G58.pdf?ci_sign=307f14995eb1bf81294e62f421d1f16cf2b0a9a4
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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AP7341-25FS4-7 AP7341.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; X2DFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: X2DFN4
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 2.5V
Manufacturer series: AP7341
Kind of package: reel; tape
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