Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74554) > Сторінка 1243 з 1243
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BAT54LPQ-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns Type of diode: Schottky rectifying Case: X1-DFN1006-2 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry Power dissipation: 0.25W Leakage current: 2µA Reverse recovery time: 5ns Capacitance: 10pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SB140-T | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TT8M_HF | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SB180-T | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.8V Max. forward impulse current: 25A Capacitance: 80pF Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMC4050SSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 5.8/-5.8A Power dissipation: 2.14W Case: SO8 Gate-source voltage: ±20V On-state resistance: 45/45mΩ Mounting: SMD Gate charge: 37.56/33.66nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMN4008LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 74nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 15.4A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMN4008LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 74nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 15.4A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMT4008LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 17.1nC On-state resistance: 12mΩ Power dissipation: 1.9W Drain current: 9.7A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 70A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4008LFDFW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 14.2nC On-state resistance: 18mΩ Power dissipation: 2.35W Drain current: 8.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4008LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 15.3nC On-state resistance: 13mΩ Power dissipation: 2.99W Drain current: 10.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4008LFDFWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 14.2nC On-state resistance: 18mΩ Power dissipation: 2.35W Drain current: 8.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 80A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4008LFDFWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 14.2nC On-state resistance: 18mΩ Power dissipation: 2.35W Drain current: 8.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 80A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4008LPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 15.3nC On-state resistance: 13mΩ Power dissipation: 2.99W Drain current: 10.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 110A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
DMP4050SSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.1A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 79mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
SMAJ54A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 4.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3094 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
ZXMHC10A07T8TA | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 1.4/-1.3A Power dissipation: 1.3W Case: SM8 Gate-source voltage: ±20V On-state resistance: 700mΩ/1Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Gate charge: 2.9/3.5nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
DMG6602SVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.7/-2.4A Pulsed drain current: 25...-20A Power dissipation: 0.84W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.06/0.095Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 2227 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
SMAZ12-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Zener current: 83mA Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 4840 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
1SMB5927B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 412 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
AZ23C6V2-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Zener voltage: 6.2V Semiconductor structure: common anode; double Type of diode: Zener |
на замовлення 1050 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
APX823-26W5G-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25 Type of integrated circuit: supervisor circuit Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Integrated circuit features: manual reset; watchdog DC supply current: 30µA Maximum output current: 20mA Delay time: 200ms Supply voltage: 1.1...5.5V DC Threshold on-voltage: 2.63V Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
DDTB114EC-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 56 Quantity in set/package: 3000pcs. Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BZT52C13T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
на замовлення 1854 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BZT52C13Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 13V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZT52C13LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 13V Mounting: SMD Tolerance: ±8% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BZT52C13LPQ-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 13V Mounting: SMD Tolerance: ±8% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BZT52C13TQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
SMAJ10CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 10µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 4993 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
SMAJ10CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
ZVN4525E6TA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.23A Pulsed drain current: 1.44A Power dissipation: 1.1W Case: SOT26 Gate-source voltage: ±40V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
DMN3023L-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 18.4nC Pulsed drain current: 44A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
KBP06G | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.5A Max. forward impulse current: 40A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
AP1501-K5G-13 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 1.23...37V DC Output current: 3A Case: TO263-5 Mounting: SMD Frequency: 150kHz Topology: buck Operating temperature: -20...85°C Kind of package: reel; tape Efficiency: 73% |
на замовлення 697 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
AP1501A-K5G-13 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 5A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 1.23...37V DC Output current: 5A Case: TO263-5 Mounting: SMD Frequency: 150kHz Topology: buck Operating temperature: -20...85°C Kind of package: reel; tape Efficiency: 72% |
на замовлення 606 шт: термін постачання 21-30 дні (днів) |
|
BAT54LPQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
товару немає в наявності
В кошику
од. на суму грн.
SB140-T |
![]() |
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
TT8M_HF |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1500+ | 13.05 грн |
SB180-T |
![]() |
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
DMC4050SSDQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Gate charge: 37.56/33.66nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Gate charge: 37.56/33.66nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
DMN4008LFG-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
товару немає в наявності
В кошику
од. на суму грн.
DMN4008LFG-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
товару немає в наявності
В кошику
од. на суму грн.
DMT4008LFV-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 70A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 70A
товару немає в наявності
В кошику
од. на суму грн.
DMTH4008LFDFW-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
товару немає в наявності
В кошику
од. на суму грн.
DMTH4008LPS-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
товару немає в наявності
В кошику
од. на суму грн.
DMTH4008LFDFWQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
DMTH4008LFDFWQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
DMTH4008LPSQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
DMP4050SSDQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMAJ54A-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3094 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 16.20 грн |
39+ | 10.37 грн |
100+ | 5.08 грн |
213+ | 4.39 грн |
586+ | 4.15 грн |
1000+ | 3.99 грн |
ZXMHC10A07T8TA |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 1.4/-1.3A
Power dissipation: 1.3W
Case: SM8
Gate-source voltage: ±20V
On-state resistance: 700mΩ/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Gate charge: 2.9/3.5nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 1.4/-1.3A
Power dissipation: 1.3W
Case: SM8
Gate-source voltage: ±20V
On-state resistance: 700mΩ/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Gate charge: 2.9/3.5nC
товару немає в наявності
В кошику
од. на суму грн.
DMG6602SVTQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2227 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.55 грн |
21+ | 18.92 грн |
50+ | 13.54 грн |
100+ | 11.72 грн |
148+ | 6.33 грн |
407+ | 5.94 грн |
SMAZ12-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Zener current: 83mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Zener current: 83mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 4840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.64 грн |
37+ | 10.85 грн |
50+ | 8.55 грн |
100+ | 7.60 грн |
186+ | 5.07 грн |
510+ | 4.75 грн |
1SMB5927B-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 412 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.32 грн |
31+ | 12.90 грн |
100+ | 9.58 грн |
147+ | 6.41 грн |
402+ | 6.02 грн |
AZ23C6V2-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 6.2V
Semiconductor structure: common anode; double
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 6.2V
Semiconductor structure: common anode; double
Type of diode: Zener
на замовлення 1050 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
87+ | 4.59 грн |
114+ | 3.48 грн |
250+ | 3.17 грн |
331+ | 2.83 грн |
908+ | 2.68 грн |
APX823-26W5G-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
24+ | 16.94 грн |
27+ | 15.20 грн |
31+ | 13.06 грн |
97+ | 9.66 грн |
267+ | 9.10 грн |
1000+ | 8.79 грн |
DDTB114EC-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
товару немає в наявності
В кошику
од. на суму грн.
BZT52C13T-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 1854 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
85+ | 4.67 грн |
178+ | 2.23 грн |
430+ | 2.17 грн |
1183+ | 2.05 грн |
BZT52C13Q-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZT52C13LP-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
BZT52C13LPQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZT52C13TQ-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMAJ10CA-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 4993 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
25+ | 15.83 грн |
31+ | 12.98 грн |
41+ | 9.66 грн |
100+ | 6.65 грн |
189+ | 4.99 грн |
518+ | 4.67 грн |
SMAJ10CAQ-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 8.27 грн |
ZVN4525E6TA |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Pulsed drain current: 1.44A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Pulsed drain current: 1.44A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 242 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 70.77 грн |
10+ | 44.89 грн |
30+ | 39.51 грн |
31+ | 31.04 грн |
83+ | 29.37 грн |
DMN3023L-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 18.4nC
Pulsed drain current: 44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 18.4nC
Pulsed drain current: 44A
товару немає в наявності
В кошику
од. на суму грн.
KBP06G |
![]() |
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
AP1501-K5G-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
на замовлення 697 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 183.31 грн |
10+ | 127.47 грн |
14+ | 68.88 грн |
38+ | 64.92 грн |
AP1501A-K5G-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 5A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 72%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 5A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 72%
на замовлення 606 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 192.69 грн |
10+ | 133.80 грн |
11+ | 88.67 грн |
29+ | 83.92 грн |