Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119485) > Сторінка 1968 з 1992

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S6E2C5AJ0AGB1000A INFINEON TECHNOLOGIES download Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
на замовлення 1870 шт:
термін постачання 14-30 дні (днів)
168+1361.19 грн
Мінімальне замовлення: 168
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S6E2CCAJ0AGB1000A INFINEON TECHNOLOGIES download Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
на замовлення 3878 шт:
термін постачання 14-30 дні (днів)
168+1599.18 грн
Мінімальне замовлення: 168
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IRF630NPBF IRF630NPBF INFINEON TECHNOLOGIES irf630n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 23.3nC
Kind of package: tube
на замовлення 751 шт:
термін постачання 14-30 дні (днів)
7+68.51 грн
11+39.43 грн
25+31.14 грн
50+30.05 грн
100+29.05 грн
250+27.79 грн
500+26.79 грн
Мінімальне замовлення: 7
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IRF630NSTRLPBF IRF630NSTRLPBF INFINEON TECHNOLOGIES irf630npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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ITS6080SEPDXUMA1 INFINEON TECHNOLOGIES infineon-its6080s-ep-d-datasheet-en.pdf Category: Power switches - integrated circuits
Description: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 80mΩ
Output current: 8A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+140.63 грн
Мінімальне замовлення: 3000
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IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES irll024n.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 2.1W
Gate-source voltage: ±16V
Drain-source voltage: 55V
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 10.4nC
On-state resistance: 65mΩ
Drain current: 4.4A
на замовлення 487 шт:
термін постачання 14-30 дні (днів)
8+63.10 грн
11+40.60 грн
50+28.80 грн
100+24.94 грн
Мінімальне замовлення: 8
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IRF300P226 IRF300P226 INFINEON TECHNOLOGIES IRF300P226.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
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IRF300P227 IRF300P227 INFINEON TECHNOLOGIES IRF300P227.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
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IRFP054NPBF IRFP054NPBF INFINEON TECHNOLOGIES irfp054n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 328 шт:
термін постачання 14-30 дні (днів)
3+214.55 грн
10+113.84 грн
25+99.61 грн
Мінімальне замовлення: 3
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CY7C68013A-56PVXC INFINEON TECHNOLOGIES Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral description Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; SO56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY7C68013A-56PVXCT INFINEON TECHNOLOGIES Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8/16bit BUS,GPIO,I2C,UART; 16kBFLASH; SO56
Type of integrated circuit: USB controller
Interface: 8/16bit BUS; GPIO; I2C; UART
Memory: 16kB FLASH
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY8C5888AXI-LP096 CY8C5888AXI-LP096 INFINEON TECHNOLOGIES infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Case: TQFP100
Mounting: SMD
Integrated circuit features: watchdog
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 80MHz
Kind of core: 32-bit
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CY8C5888LTI-LP097 INFINEON TECHNOLOGIES infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; QFN68; 64kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 64kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 80MHz
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BSC032N04LSATMA1 BSC032N04LSATMA1 INFINEON TECHNOLOGIES BSC032N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TDSON-8
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Polarisation: unipolar
на замовлення 1134 шт:
термін постачання 14-30 дні (днів)
5+95.55 грн
6+70.31 грн
10+61.11 грн
50+53.57 грн
Мінімальне замовлення: 5
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IR2302STRPBF IR2302STRPBF INFINEON TECHNOLOGIES IR2302SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
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IR2308SPBF IR2308SPBF INFINEON TECHNOLOGIES ir2308.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
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IR2304STRPBF INFINEON TECHNOLOGIES ir2304.pdf?fileId=5546d462533600a4015355c9954a16e0 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Input voltage: 10...20V
Output current: 0.13A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
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IR2301STRPBF INFINEON TECHNOLOGIES ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 2
Output current: 0.2A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
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S29AL008J55TFIR23 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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CY7C68013A-100AXC CY7C68013A-100AXC INFINEON TECHNOLOGIES Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral description Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP100
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP100
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 40
Kind of core: 8-bit
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CY7C68013A-128AXI INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP128
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP128
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 40
Kind of core: 8-bit
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CY7C68013A-56LTXC INFINEON TECHNOLOGIES Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: QFN56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY7C68013A-56LTXI INFINEON TECHNOLOGIES Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: QFN56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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ICE3BR0665JXKLA1 ICE3BR0665JXKLA1 INFINEON TECHNOLOGIES ICE3BR0665J.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 4.8A
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
на замовлення 147 шт:
термін постачання 14-30 дні (днів)
3+146.49 грн
10+130.58 грн
Мінімальне замовлення: 3
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ICE3BR1765JXKLA1 ICE3BR1765JXKLA1 INFINEON TECHNOLOGIES ICE3BR1765J.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
на замовлення 172 шт:
термін постачання 14-30 дні (днів)
4+113.84 грн
10+108.82 грн
Мінімальне замовлення: 4
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ICE3A2065ELJFKLA1 ICE3A2065ELJFKLA1 INFINEON TECHNOLOGIES ICE3A2065ELJ.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
Output current: 10.3A
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
3+157.75 грн
5+125.56 грн
10+115.51 грн
Мінімальне замовлення: 3
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ICE3AR0680JZXKLA1
+1
 		ICE3AR0680JZXKLA1 INFINEON TECHNOLOGIES ICE3AR0680JZ.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 20A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
3+222.66 грн
Мінімальне замовлення: 3
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ICE3RBR0665JZXKLA1
+1
 		ICE3RBR0665JZXKLA1 INFINEON TECHNOLOGIES INFNS27653-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
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ICE3RBR1765JZXKLA1
+1
 		ICE3RBR1765JZXKLA1 INFINEON TECHNOLOGIES ICE3RBR1765JZ.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
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ICE3PCS02GXUMA1 ICE3PCS02GXUMA1 INFINEON TECHNOLOGIES infineon-ice3pcs02g-ds-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
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ICE3RBR4765JZXKLA1
+1
 		ICE3RBR4765JZXKLA1 INFINEON TECHNOLOGIES ICE3RBR4765JZ.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
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ICE3B1565JFKLA1 INFINEON TECHNOLOGIES Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 67kHz; DIP8; flyback; 650V; 42W
Type of integrated circuit: PMIC
Frequency: 67kHz
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
Power: 42W
на замовлення 1300 шт:
термін постачання 14-30 дні (днів)
1300+110.88 грн
Мінімальне замовлення: 1300
В кошику  од. на суму  грн.
ICE3AR0680VJZXKLA1 INFINEON TECHNOLOGIES Infineon-ICE3AR0680VJZ-DS-v02_01-en.pdf?fileId=db3a304341e0aed00141ffe31ad53057 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 800V; 82W
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Breakdown voltage: 800V
Power: 82W
на замовлення 1300 шт:
термін постачання 14-30 дні (днів)
1300+157.75 грн
Мінімальне замовлення: 1300
В кошику  од. на суму  грн.
ICE3BR0680JZXKLA1 INFINEON TECHNOLOGIES Infineon-ICE3BR0680JZ-DS-v02_01-en.pdf?fileId=db3a304329a0f6ee0129e8b5bf735b64 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; Ch: 1; DIP8; flyback; Uin: 10.5÷25V; Ubr: 800V; 82W
Type of integrated circuit: PMIC
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 800V
Power: 82W
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
1500+146.94 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
ICE3RBR4765JGXUMA1 INFINEON TECHNOLOGIES Infineon-ICE3RBR4765JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf62dc7516 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; PG-DSO-12; flyback; Uin: 10.5÷25V; Ubr: 650V; 24W
Type of integrated circuit: PMIC
Frequency: 65kHz
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 650V
Power: 24W
на замовлення 25000 шт:
термін постачання 14-30 дні (днів)
2500+73.92 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
GS61008PMRXUSA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 65A; Idm: 140A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 140A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: tape
Kind of channel: enhancement
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GS66502BMRXUSA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 15A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 516mΩ
Mounting: SMD
Gate charge: 1.6nC
Kind of package: tape
Kind of channel: enhancement
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GS0650306LLMRXUMA1 INFINEON TECHNOLOGIES Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 67A
Case: TOLL
Gate-source voltage: -10...7V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
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IGOT60R070D1AUMA1 INFINEON TECHNOLOGIES IGOT60R070D1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 INFINEON TECHNOLOGIES IGT60R070D1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
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IRF6218STRLPBF IRF6218STRLPBF INFINEON TECHNOLOGIES irf6218spbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IR38263MTRPBFAUMA1 INFINEON TECHNOLOGIES IR38263M.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Topology: buck
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Case: PQFN5X7
Kind of package: reel; tape
Operating temperature: -40...125°C
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Frequency: 0.15...1.5MHz
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IKP08N65H5XKSA1 IKP08N65H5XKSA1 INFINEON TECHNOLOGIES IKP08N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Collector-emitter voltage: 650V
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FM25L16B-DG INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
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FM25L16B-DGTR INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
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IRFSL4410ZPBF IRFSL4410ZPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Kind of package: tube
Drain current: 97A
Power dissipation: 230W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: TO262
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IR2125PBF IR2125PBF INFINEON TECHNOLOGIES ir2125.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
на замовлення 122 шт:
термін постачання 14-30 дні (днів)
2+238.89 грн
3+200.06 грн
10+169.09 грн
25+156.53 грн
50+150.67 грн
100+145.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2121PBF IR2121PBF INFINEON TECHNOLOGIES ir2121.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 150ns
Power: 1W
Voltage class: 5V
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
3+175.78 грн
10+153.18 грн
25+150.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR2125SPBF IR2125SPBF INFINEON TECHNOLOGIES IR2125SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
на замовлення 1396 шт:
термін постачання 14-30 дні (днів)
3+173.98 грн
10+154.86 грн
45+148.16 грн
90+141.46 грн
270+138.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR2128STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IPB160N04S4H1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Application: automotive industry
Case: TO263-7
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Gate charge: 137nC
On-state resistance: 1.4mΩ
Power dissipation: 167W
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IPB160N04S4LH1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Case: PG-TO263-7-3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Pulsed drain current: 640A
Drain-source voltage: 40V
Gate-source voltage: -16...20V
Drain current: 160A
On-state resistance: 1.5mΩ
Power dissipation: 167W
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IRS2304SPBF IRS2304SPBF INFINEON TECHNOLOGIES irs2304spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 10...20V DC
Output current: -600...290mA
Turn-off time: 185ns
Power: 625mW
Voltage class: 600V
Turn-on time: 220ns
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
3+171.28 грн
5+116.35 грн
10+89.57 грн
Мінімальне замовлення: 3
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BTS4141N BTS4141N INFINEON TECHNOLOGIES BTS4141N.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
на замовлення 2539 шт:
термін постачання 14-30 дні (днів)
2+247.90 грн
10+153.18 грн
100+120.54 грн
250+107.98 грн
500+98.77 грн
1000+95.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS4880R BTS4880R INFINEON TECHNOLOGIES BTS4880R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
1+888.83 грн
10+654.58 грн
100+538.23 грн
500+517.31 грн
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BTS452T BTS452T INFINEON TECHNOLOGIES BTS452T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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BTS4175SGA BTS4175SGA INFINEON TECHNOLOGIES BTS4175SGA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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BTS436L2GATMA1 INFINEON TECHNOLOGIES Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Power dissipation: 75W
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
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SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
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IRFR1205TRPBF IRFR1205TRPBF INFINEON TECHNOLOGIES irfr1205pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 37A
Power dissipation: 107W
на замовлення 1851 шт:
термін постачання 14-30 дні (днів)
9+54.09 грн
12+35.49 грн
50+29.63 грн
100+27.62 грн
500+23.86 грн
1000+22.77 грн
Мінімальне замовлення: 9
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S6E2C5AJ0AGB1000A download
Виробник: INFINEON TECHNOLOGIES
Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
на замовлення 1870 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
168+1361.19 грн
Мінімальне замовлення: 168
В кошику  од. на суму  грн.
S6E2CCAJ0AGB1000A download
Виробник: INFINEON TECHNOLOGIES
Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
на замовлення 3878 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
168+1599.18 грн
Мінімальне замовлення: 168
В кошику  од. на суму  грн.
IRF630NPBF description irf630n.pdf
IRF630NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 23.3nC
Kind of package: tube
на замовлення 751 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+68.51 грн
11+39.43 грн
25+31.14 грн
50+30.05 грн
100+29.05 грн
250+27.79 грн
500+26.79 грн
Мінімальне замовлення: 7
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IRF630NSTRLPBF irf630npbf.pdf
IRF630NSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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ITS6080SEPDXUMA1 infineon-its6080s-ep-d-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 80mΩ
Output current: 8A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+140.63 грн
Мінімальне замовлення: 3000
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IRLL024NTRPBF description irll024n.pdf
IRLL024NTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 2.1W
Gate-source voltage: ±16V
Drain-source voltage: 55V
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 10.4nC
On-state resistance: 65mΩ
Drain current: 4.4A
на замовлення 487 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+63.10 грн
11+40.60 грн
50+28.80 грн
100+24.94 грн
Мінімальне замовлення: 8
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IRF300P226 IRF300P226.pdf
IRF300P226
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
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IRF300P227 IRF300P227.pdf
IRF300P227
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
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IRFP054NPBF irfp054n.pdf
IRFP054NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 328 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+214.55 грн
10+113.84 грн
25+99.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C68013A-56PVXC description Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; SO56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY7C68013A-56PVXCT Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8/16bit BUS,GPIO,I2C,UART; 16kBFLASH; SO56
Type of integrated circuit: USB controller
Interface: 8/16bit BUS; GPIO; I2C; UART
Memory: 16kB FLASH
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY8C5888AXI-LP096 infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf
CY8C5888AXI-LP096
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Case: TQFP100
Mounting: SMD
Integrated circuit features: watchdog
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 80MHz
Kind of core: 32-bit
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CY8C5888LTI-LP097 infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; QFN68; 64kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 64kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 80MHz
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BSC032N04LSATMA1 BSC032N04LS-DTE.pdf
BSC032N04LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TDSON-8
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Polarisation: unipolar
на замовлення 1134 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+95.55 грн
6+70.31 грн
10+61.11 грн
50+53.57 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IR2302STRPBF IR2302SPBF.pdf
IR2302STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
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IR2308SPBF ir2308.pdf
IR2308SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
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IR2304STRPBF ir2304.pdf?fileId=5546d462533600a4015355c9954a16e0
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Input voltage: 10...20V
Output current: 0.13A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
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IR2301STRPBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 2
Output current: 0.2A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
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S29AL008J55TFIR23 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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CY7C68013A-100AXC description Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral
CY7C68013A-100AXC
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP100
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP100
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 40
Kind of core: 8-bit
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CY7C68013A-128AXI download
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP128
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP128
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 40
Kind of core: 8-bit
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CY7C68013A-56LTXC Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: QFN56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY7C68013A-56LTXI Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: QFN56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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ICE3BR0665JXKLA1 ICE3BR0665J.pdf
ICE3BR0665JXKLA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 4.8A
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
на замовлення 147 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+146.49 грн
10+130.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE3BR1765JXKLA1 ICE3BR1765J.pdf
ICE3BR1765JXKLA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
на замовлення 172 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+113.84 грн
10+108.82 грн
Мінімальне замовлення: 4
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ICE3A2065ELJFKLA1 ICE3A2065ELJ.pdf
ICE3A2065ELJFKLA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
Output current: 10.3A
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+157.75 грн
5+125.56 грн
10+115.51 грн
Мінімальне замовлення: 3
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ICE3AR0680JZXKLA1 ICE3AR0680JZ.pdf
ICE3AR0680JZXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 20A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+222.66 грн
Мінімальне замовлення: 3
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ICE3RBR0665JZXKLA1 INFNS27653-1.pdf?t.download=true&u=5oefqw
ICE3RBR0665JZXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
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ICE3RBR1765JZXKLA1 ICE3RBR1765JZ.pdf
ICE3RBR1765JZXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
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ICE3PCS02GXUMA1 infineon-ice3pcs02g-ds-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b
ICE3PCS02GXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
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ICE3RBR4765JZXKLA1 ICE3RBR4765JZ.pdf
ICE3RBR4765JZXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
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ICE3B1565JFKLA1 Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 67kHz; DIP8; flyback; 650V; 42W
Type of integrated circuit: PMIC
Frequency: 67kHz
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
Power: 42W
на замовлення 1300 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1300+110.88 грн
Мінімальне замовлення: 1300
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ICE3AR0680VJZXKLA1 Infineon-ICE3AR0680VJZ-DS-v02_01-en.pdf?fileId=db3a304341e0aed00141ffe31ad53057
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 800V; 82W
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Breakdown voltage: 800V
Power: 82W
на замовлення 1300 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1300+157.75 грн
Мінімальне замовлення: 1300
В кошику  од. на суму  грн.
ICE3BR0680JZXKLA1 Infineon-ICE3BR0680JZ-DS-v02_01-en.pdf?fileId=db3a304329a0f6ee0129e8b5bf735b64
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; Ch: 1; DIP8; flyback; Uin: 10.5÷25V; Ubr: 800V; 82W
Type of integrated circuit: PMIC
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 800V
Power: 82W
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1500+146.94 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
ICE3RBR4765JGXUMA1 Infineon-ICE3RBR4765JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf62dc7516
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; PG-DSO-12; flyback; Uin: 10.5÷25V; Ubr: 650V; 24W
Type of integrated circuit: PMIC
Frequency: 65kHz
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 650V
Power: 24W
на замовлення 25000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+73.92 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
GS61008PMRXUSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 65A; Idm: 140A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 140A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: tape
Kind of channel: enhancement
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GS66502BMRXUSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 15A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 516mΩ
Mounting: SMD
Gate charge: 1.6nC
Kind of package: tape
Kind of channel: enhancement
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GS0650306LLMRXUMA1 Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 67A
Case: TOLL
Gate-source voltage: -10...7V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
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IGOT60R070D1AUMA1 IGOT60R070D1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
товару немає в наявності
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IGT60R070D1ATMA1 IGT60R070D1.pdf
IGT60R070D1ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
товару немає в наявності
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IRF6218STRLPBF irf6218spbf.pdf
IRF6218STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IR38263MTRPBFAUMA1 IR38263M.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Topology: buck
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Case: PQFN5X7
Kind of package: reel; tape
Operating temperature: -40...125°C
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Frequency: 0.15...1.5MHz
товару немає в наявності
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IKP08N65H5XKSA1 IKP08N65H5-DTE.pdf
IKP08N65H5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Collector-emitter voltage: 650V
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FM25L16B-DG Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
товару немає в наявності
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FM25L16B-DGTR Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
товару немає в наявності
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IRFSL4410ZPBF irfb4410zpbf.pdf
IRFSL4410ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Kind of package: tube
Drain current: 97A
Power dissipation: 230W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: TO262
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IR2125PBF ir2125.pdf
IR2125PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
на замовлення 122 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+238.89 грн
3+200.06 грн
10+169.09 грн
25+156.53 грн
50+150.67 грн
100+145.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2121PBF ir2121.pdf
IR2121PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 150ns
Power: 1W
Voltage class: 5V
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+175.78 грн
10+153.18 грн
25+150.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR2125SPBF IR2125SPBF.pdf
IR2125SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
на замовлення 1396 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+173.98 грн
10+154.86 грн
45+148.16 грн
90+141.46 грн
270+138.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR2128STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
товару немає в наявності
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IPB160N04S4H1ATMA1 Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Application: automotive industry
Case: TO263-7
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Gate charge: 137nC
On-state resistance: 1.4mΩ
Power dissipation: 167W
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IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Case: PG-TO263-7-3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Pulsed drain current: 640A
Drain-source voltage: 40V
Gate-source voltage: -16...20V
Drain current: 160A
On-state resistance: 1.5mΩ
Power dissipation: 167W
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IRS2304SPBF irs2304spbf.pdf
IRS2304SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 10...20V DC
Output current: -600...290mA
Turn-off time: 185ns
Power: 625mW
Voltage class: 600V
Turn-on time: 220ns
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+171.28 грн
5+116.35 грн
10+89.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS4141N description BTS4141N.pdf
BTS4141N
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
на замовлення 2539 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+247.90 грн
10+153.18 грн
100+120.54 грн
250+107.98 грн
500+98.77 грн
1000+95.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS4880R BTS4880R.pdf
BTS4880R
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+888.83 грн
10+654.58 грн
100+538.23 грн
500+517.31 грн
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BTS452T BTS452T.pdf
BTS452T
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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BTS4175SGA BTS4175SGA.pdf
BTS4175SGA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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BTS436L2GATMA1 Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Power dissipation: 75W
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
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SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
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IRFR1205TRPBF irfr1205pbf.pdf
IRFR1205TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 37A
Power dissipation: 107W
на замовлення 1851 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+54.09 грн
12+35.49 грн
50+29.63 грн
100+27.62 грн
500+23.86 грн
1000+22.77 грн
Мінімальне замовлення: 9
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