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BCX 56-10 E6327 BCX 56-10 E6327 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368&location=.en.product.findProductTypeByName.html_dgdl_bcx54_bcx55_bcx56.pdf Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
BCX5616E6327HTSA1 BCX5616E6327HTSA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368&location=.en.product.findProductTypeByName.html_dgdl_bcx54_bcx55_bcx56.pdf Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
BCX6925E6327HTSA1 BCX6925E6327HTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товару немає в наявності
В кошику  од. на суму  грн.
BCX70HE6327HTSA1 BCX70HE6327HTSA1 Infineon Technologies BCW60%2C%20BCX70%20Rev2007.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
В кошику  од. на суму  грн.
BCX70JE6327HTSA1 BCX70JE6327HTSA1 Infineon Technologies BCW60%2C%20BCX70%20Rev2007.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 88678 шт:
термін постачання 21-31 дні (днів)
20+16.67 грн
32+9.79 грн
100+6.09 грн
500+4.17 грн
1000+3.68 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BCX71HE6327HTSA1 BCX71HE6327HTSA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
В кошику  од. на суму  грн.
BCX71JE6327HTSA1 BCX71JE6327HTSA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 44695 шт:
термін постачання 21-31 дні (днів)
17+19.05 грн
28+11.16 грн
100+6.94 грн
500+4.78 грн
1000+4.22 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BDP948E6327HTSA1 BDP948E6327HTSA1 Infineon Technologies bdp948_bdp950.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67&location=.en.product.findProductTypeByName.html_dgdl_bdp948_bdp950.pdf Description: TRANS PNP 45V 3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
товару немає в наявності
В кошику  од. на суму  грн.
BDP950E6327HTSA1 BDP950E6327HTSA1 Infineon Technologies bdp948_bdp950.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67&location=.en.product.findProductTypeByName.html_dgdl_bdp948_bdp950.pdf Description: TRANS PNP 60V 3A PG-SOT223-4-10
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
товару немає в наявності
В кошику  од. на суму  грн.
BF2040E6814HTSA1 BF2040E6814HTSA1 Infineon Technologies bf2040series.pdf?folderId=db3a30431441fb5d0114ab95022d1351&fileId=db3a30431441fb5d0114abbae832137f Description: RF MOSFET 5V SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Last Time Buy
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
товару немає в наявності
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BF776H6327XTSA1 BF776H6327XTSA1 Infineon Technologies BF776.pdf Description: RF TRANS NPN 4.7V 46GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
11+30.17 грн
15+20.41 грн
25+18.16 грн
100+14.74 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BF799E6327HTSA1 BF799E6327HTSA1 Infineon Technologies BF799.pdf Description: RF TRANS NPN 20V 800MHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFN18E6327HTSA1 BFN18E6327HTSA1 Infineon Technologies bfn18.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b188060234 Description: TRANS NPN 300V 0.2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
BFN24E6327HTSA1 BFN24E6327HTSA1 Infineon Technologies bfn24_bfn26.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156a1bcc68214d Description: TRANS NPN 250V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 360 mW
товару немає в наявності
В кошику  од. на суму  грн.
BFN26E6327HTSA1 BFN26E6327HTSA1 Infineon Technologies bfn24_bfn26.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156a1bcc68214d Description: TRANS NPN 300V 0.2A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товару немає в наявності
В кошику  од. на суму  грн.
BFN27E6327HTSA1 BFN27E6327HTSA1 Infineon Technologies bfn27.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c2ee1c0239 Description: TRANS PNP 300V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товару немає в наявності
В кошику  од. на суму  грн.
BFP193WH6327XTSA1 BFP193WH6327XTSA1 Infineon Technologies bfp193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142678c81e061f Description: RF TRANS NPN 12V 8GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 20.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 52785 шт:
термін постачання 21-31 дні (днів)
29+11.11 грн
44+7.11 грн
49+6.27 грн
100+4.97 грн
250+4.55 грн
500+4.29 грн
1000+4.01 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
BFP196WH6327XTSA1 BFP196WH6327XTSA1 Infineon Technologies bfp196w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114267ecec60628 Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
на замовлення 15956 шт:
термін постачання 21-31 дні (днів)
25+12.70 грн
37+8.33 грн
42+7.31 грн
100+5.83 грн
250+5.35 грн
500+5.05 грн
1000+4.73 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BFP405H6327XTSA1 BFP405H6327XTSA1 Infineon Technologies BFP405_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 11250 шт:
термін постачання 21-31 дні (днів)
13+25.40 грн
19+16.82 грн
25+14.92 грн
100+12.09 грн
250+11.18 грн
500+10.63 грн
1000+10.00 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BFP420H6327XTSA1 BFP420H6327XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 22052 шт:
термін постачання 21-31 дні (днів)
10+31.76 грн
15+21.41 грн
25+19.11 грн
100+15.55 грн
250+14.42 грн
500+13.74 грн
1000+13.01 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BFQ 19S E6327 BFQ 19S E6327 Infineon Technologies bfq19s.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142683f6870630 Description: RF TRANS NPN 15V 5.5GHZ PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB ~ 11.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 210mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Supplier Device Package: PG-SOT89
товару немає в наявності
В кошику  од. на суму  грн.
BFR106E6327HTSA1 BFR106E6327HTSA1 Infineon Technologies bfr106.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142686f2030637 Description: RF TRANS NPN 15V 5GHZ PG SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8.5dB ~ 13dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 210mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 16331 шт:
термін постачання 21-31 дні (днів)
17+19.05 грн
24+12.77 грн
27+11.35 грн
100+9.11 грн
250+8.39 грн
500+7.96 грн
1000+7.47 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BFR183E6327HTSA1 BFR183E6327HTSA1 Infineon Technologies bfr183.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426a1b8f80656 Description: RF TRANS NPN 12V 8GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 17321 шт:
термін постачання 21-31 дні (днів)
22+15.08 грн
31+10.17 грн
35+8.90 грн
100+7.12 грн
250+6.54 грн
500+6.18 грн
1000+5.79 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BFR360FH6327XTSA1 BFR360FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
на замовлення 22207 шт:
термін постачання 21-31 дні (днів)
23+14.29 грн
34+9.17 грн
38+8.10 грн
100+6.46 грн
250+5.93 грн
500+5.61 грн
1000+5.26 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BFR93AE6327HTSA1 BFR93AE6327HTSA1 Infineon Technologies bfr93a.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142702189806ae Description: RF TRANS NPN 12V 6GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 14.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 9669 шт:
термін постачання 21-31 дні (днів)
18+18.26 грн
26+12.08 грн
29+10.70 грн
100+8.60 грн
250+7.92 грн
500+7.50 грн
1000+7.05 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BFS17PE6327HTSA1 BFS17PE6327HTSA1 Infineon Technologies bfs17p.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142707fafd06b5 Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
BGA427H6327XTSA1 BGA427H6327XTSA1 Infineon Technologies bga427.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418dca4d1638 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 2V ~ 5V
Gain: 18.5dB
Current - Supply: 25mA
Noise Figure: 2.2dB
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
на замовлення 8418 шт:
термін постачання 21-31 дні (днів)
6+60.34 грн
10+50.00 грн
25+47.12 грн
100+40.53 грн
250+38.30 грн
500+36.72 грн
1000+34.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSC010NE2LSATMA1 BSC010NE2LSATMA1 Infineon Technologies BSC010NE2LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb3d176a3f1b Description: MOSFET N-CH 25V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 12 V
на замовлення 10852 шт:
термін постачання 21-31 дні (днів)
4+83.36 грн
10+62.31 грн
100+45.04 грн
500+41.57 грн
1000+39.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC014N03MS G BSC014N03MS G Infineon Technologies BSC014N03MSG_rev1.2.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304319c6f18c011a38f5a96704e8 Description: MOSFET N-CH 30V 100A TDSON-8
товару немає в наявності
В кошику  од. на суму  грн.
BSC016N03LS G BSC016N03LS G Infineon Technologies BSC016N03LS_rev1.28.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42761a13c1b Description: MOSFET N-CH 30V 100A TDSON8
на замовлення 637 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC018N04LSGATMA1 BSC018N04LSGATMA1 Infineon Technologies BSC018N04LSG_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431689f4420116c42d085d0808 Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
на замовлення 18665 шт:
термін постачання 21-31 дні (днів)
3+130.20 грн
10+80.12 грн
100+53.92 грн
500+40.07 грн
1000+37.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC018NE2LSATMA1 BSC018NE2LSATMA1 Infineon Technologies BSC018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012ca6b7736b2f40 Description: MOSFET N-CH 25V 29A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
на замовлення 5135 шт:
термін постачання 21-31 дні (днів)
3+114.32 грн
10+69.95 грн
100+46.76 грн
500+34.55 грн
1000+31.54 грн
2000+30.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC020N03LSGATMA1 BSC020N03LSGATMA1 Infineon Technologies BSC020N03LS_rev1.27.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427641b3c1f Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
на замовлення 17744 шт:
термін постачання 21-31 дні (днів)
4+93.68 грн
10+63.15 грн
100+46.50 грн
500+32.98 грн
1000+29.40 грн
2000+28.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC030N03LSGATMA1 BSC030N03LSGATMA1 Infineon Technologies BSC030N03LS_rev1.25.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42766953c23 Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 20566 шт:
термін постачання 21-31 дні (днів)
10+31.04 грн
100+27.56 грн
500+23.59 грн
1000+23.33 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 Infineon Technologies BSC030P03NS3+G_2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431d8a6b3c011d90d084910435 Description: MOSFET P-CH 30V 25.4/100A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 345µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V
на замовлення 27908 шт:
термін постачання 21-31 дні (днів)
3+154.81 грн
10+108.71 грн
100+80.37 грн
500+61.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC035N04LSGATMA1 BSC035N04LSGATMA1 Infineon Technologies BSC035N04LSG_rev1.02.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4388f820817 Description: MOSFET N-CH 40V 21A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
на замовлення 14920 шт:
термін постачання 21-31 дні (днів)
4+89.71 грн
10+54.81 грн
100+39.88 грн
500+29.27 грн
1000+26.65 грн
2000+25.19 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 Infineon Technologies BSC047N08NS3G_rev2.4.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a30431add1d95011ae7e8dacf5611 Description: MOSFET N-CH 80V 18A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 40 V
на замовлення 6135 шт:
термін постачання 21-31 дні (днів)
2+222.29 грн
10+148.85 грн
100+104.73 грн
500+81.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC050N04LSGATMA1 BSC050N04LSGATMA1 Infineon Technologies BSC050N04LSG_rev1.02.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4440ee3081c Description: MOSFET N-CH 40V 18A/85A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 20 V
на замовлення 102456 шт:
термін постачання 21-31 дні (днів)
5+63.51 грн
10+43.81 грн
100+29.13 грн
500+23.92 грн
1000+20.73 грн
2000+19.82 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC059N04LSGATMA1 BSC059N04LSGATMA1 Infineon Technologies BSC059N04LSG_rev1.02.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4481e4b081f Description: MOSFET N-CH 40V 16A/73A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 20 V
на замовлення 16925 шт:
термін постачання 21-31 дні (днів)
6+59.54 грн
10+48.62 грн
100+32.29 грн
500+24.29 грн
1000+20.75 грн
2000+20.15 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 Infineon Technologies BSC076N06NS3_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb04d68c7fc7 Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
на замовлення 37142 шт:
термін постачання 21-31 дні (днів)
4+101.62 грн
10+63.38 грн
100+47.04 грн
500+38.08 грн
1000+33.88 грн
2000+32.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP50E6327HTSA1 BSP50E6327HTSA1 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BSP 51 E6327 BSP 51 E6327 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 60V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
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BSP 52 E6327 BSP 52 E6327 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 80V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSP62E6327HTSA1 BSP62E6327HTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 80V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
товару немає в наявності
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BTM7752GXUMA1 BTM7752GXUMA1 Infineon Technologies Infineon-BTM7752G-DS-v02_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30432e1525b3012e24c6ed042357&ack=t Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 28V
Supplier Device Package: PG-DSO-36
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BTS117TCBUMA1 BTS117TCBUMA1 Infineon Technologies Infineon-BTS117TC-DS-v01_00-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043242ebc9e01242f3d87500018&ack=t Description: IC PWR SWITCH N-CHAN 1:1 TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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BTS133TCBUMA1 BTS133TCBUMA1 Infineon Technologies Infineon-BTS133TC-DS-v01_00-en.pdf?folderId=db3a304412b407950112b434dac161e7&fileId=db3a3043242ebc9e01242f40dc3f002b&ack=t Description: IC PWR SWITCH N-CHAN 1:1 TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
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BTS141TCBUMA1 BTS141TCBUMA1 Infineon Technologies Infineon-BTS141TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aaddd813f4c35 Description: IC PWR SWITCH N-CHAN 1:1 TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
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BTS142DATMA1 BTS142DATMA1 Infineon Technologies Infineon-BTS142D-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aa33550fb0fb2 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 23mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
2+182.60 грн
10+130.88 грн
25+119.60 грн
100+100.51 грн
250+94.93 грн
500+91.56 грн
1000+87.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS500551TMCATMA1 BTS500551TMCATMA1 Infineon Technologies Infineon-BTS50055-1TMC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0007235e9 Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 70A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товару немає в наявності
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BTS50202EKAXUMA2 BTS50202EKAXUMA2 Infineon Technologies Infineon-BTS5020-2EKA-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a84fd0f4f75c8 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 18260 шт:
термін постачання 21-31 дні (днів)
2+203.24 грн
10+146.17 грн
25+133.85 грн
100+112.87 грн
250+106.80 грн
500+103.13 грн
1000+98.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS50452EKAXUMA1 BTS50452EKAXUMA1 Infineon Technologies Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 5642 шт:
термін постачання 21-31 дні (днів)
3+151.63 грн
10+108.02 грн
25+98.50 грн
100+82.64 грн
250+77.96 грн
500+75.14 грн
1000+71.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS6142DAUMA1 BTS6142DAUMA1 Infineon Technologies Infineon-BTS6142D-DS-v01_01-EN.pdf?fileId=5546d4625a888733015aa3da1e0e1026 Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 38V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 6618 шт:
термін постачання 21-31 дні (днів)
2+190.53 грн
10+136.77 грн
25+125.13 грн
100+105.41 грн
250+99.68 грн
500+96.22 грн
1000+91.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ESD3V3U4ULCE6327XTSA1 ESD3V3U4ULCE6327XTSA1 Infineon Technologies ESD3V3U4ULC.pdf Description: TVS DIODE 3.3VWM 11VC TSLP-9-1
Packaging: Cut Tape (CT)
Package / Case: 9-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-9-1
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 Infineon Technologies ProductDatasheetICE2PCS01_v2_2+Oct2007.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b427caa43ccf Description: IC PFC CTRLR CCM 315KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 50kHz ~ 315kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
на замовлення 4532 шт:
термін постачання 21-31 дні (днів)
5+76.21 грн
10+53.06 грн
25+47.92 грн
100+39.69 грн
250+37.17 грн
500+35.65 грн
1000+33.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IDD04S60CBUMA1 IDD04S60CBUMA1 Infineon Technologies IDD04S60C.pdf Description: DIODE SIC 600V 5.6A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 5.6A
Supplier Device Package: PG-TO252-3-11
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
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IPB016N06L3GATMA1 IPB016N06L3GATMA1 Infineon Technologies IPB016N06L3_Rev2.1.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e261543e54693 Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
на замовлення 9046 шт:
термін постачання 21-31 дні (днів)
2+174.66 грн
10+141.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB019N08N3GATMA1 IPB019N08N3GATMA1 Infineon Technologies IPB019N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae87fdf90569f Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
на замовлення 6027 шт:
термін постачання 21-31 дні (днів)
1+429.50 грн
10+333.78 грн
100+270.21 грн
500+220.15 грн
В кошику  од. на суму  грн.
IPB025N08N3GATMA1 IPB025N08N3GATMA1 Infineon Technologies IPB025N08N3_Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117d35658bc066b Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
на замовлення 11803 шт:
термін постачання 21-31 дні (днів)
1+389.80 грн
10+250.37 грн
100+179.38 грн
500+139.96 грн
В кошику  од. на суму  грн.
IPB027N10N3GATMA1 IPB027N10N3GATMA1 Infineon Technologies IPB027N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed9348e15ef Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
на замовлення 7668 шт:
термін постачання 21-31 дні (днів)
2+262.78 грн
10+194.03 грн
100+166.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCX 56-10 E6327 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368&location=.en.product.findProductTypeByName.html_dgdl_bcx54_bcx55_bcx56.pdf
BCX 56-10 E6327
Виробник: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
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BCX5616E6327HTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368&location=.en.product.findProductTypeByName.html_dgdl_bcx54_bcx55_bcx56.pdf
BCX5616E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
BCX6925E6327HTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6925E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товару немає в наявності
В кошику  од. на суму  грн.
BCX70HE6327HTSA1 BCW60%2C%20BCX70%20Rev2007.pdf
BCX70HE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
В кошику  од. на суму  грн.
BCX70JE6327HTSA1 BCW60%2C%20BCX70%20Rev2007.pdf
BCX70JE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 88678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+16.67 грн
32+9.79 грн
100+6.09 грн
500+4.17 грн
1000+3.68 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BCX71HE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCX71HE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
В кошику  од. на суму  грн.
BCX71JE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCX71JE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 44695 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+19.05 грн
28+11.16 грн
100+6.94 грн
500+4.78 грн
1000+4.22 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BDP948E6327HTSA1 bdp948_bdp950.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67&location=.en.product.findProductTypeByName.html_dgdl_bdp948_bdp950.pdf
BDP948E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
товару немає в наявності
В кошику  од. на суму  грн.
BDP950E6327HTSA1 bdp948_bdp950.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67&location=.en.product.findProductTypeByName.html_dgdl_bdp948_bdp950.pdf
BDP950E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 60V 3A PG-SOT223-4-10
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
товару немає в наявності
В кошику  од. на суму  грн.
BF2040E6814HTSA1 bf2040series.pdf?folderId=db3a30431441fb5d0114ab95022d1351&fileId=db3a30431441fb5d0114abbae832137f
BF2040E6814HTSA1
Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Last Time Buy
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
товару немає в наявності
В кошику  од. на суму  грн.
BF776H6327XTSA1 BF776.pdf
BF776H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.17 грн
15+20.41 грн
25+18.16 грн
100+14.74 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BF799E6327HTSA1 BF799.pdf
BF799E6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 20V 800MHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFN18E6327HTSA1 bfn18.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b188060234
BFN18E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 300V 0.2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
BFN24E6327HTSA1 bfn24_bfn26.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156a1bcc68214d
BFN24E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 250V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 360 mW
товару немає в наявності
В кошику  од. на суму  грн.
BFN26E6327HTSA1 bfn24_bfn26.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156a1bcc68214d
BFN26E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 300V 0.2A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товару немає в наявності
В кошику  од. на суму  грн.
BFN27E6327HTSA1 bfn27.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c2ee1c0239
BFN27E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 300V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товару немає в наявності
В кошику  од. на суму  грн.
BFP193WH6327XTSA1 bfp193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142678c81e061f
BFP193WH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 20.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 52785 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+11.11 грн
44+7.11 грн
49+6.27 грн
100+4.97 грн
250+4.55 грн
500+4.29 грн
1000+4.01 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
BFP196WH6327XTSA1 bfp196w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114267ecec60628
BFP196WH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
на замовлення 15956 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.70 грн
37+8.33 грн
42+7.31 грн
100+5.83 грн
250+5.35 грн
500+5.05 грн
1000+4.73 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BFP405H6327XTSA1 BFP405_Rev2013.pdf
BFP405H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 11250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.40 грн
19+16.82 грн
25+14.92 грн
100+12.09 грн
250+11.18 грн
500+10.63 грн
1000+10.00 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BFP420H6327XTSA1 BFP420_Rev2013.pdf
BFP420H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 22052 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.76 грн
15+21.41 грн
25+19.11 грн
100+15.55 грн
250+14.42 грн
500+13.74 грн
1000+13.01 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BFQ 19S E6327 bfq19s.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142683f6870630
BFQ 19S E6327
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5.5GHZ PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB ~ 11.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 210mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Supplier Device Package: PG-SOT89
товару немає в наявності
В кошику  од. на суму  грн.
BFR106E6327HTSA1 bfr106.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142686f2030637
BFR106E6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ PG SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8.5dB ~ 13dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 210mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 16331 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+19.05 грн
24+12.77 грн
27+11.35 грн
100+9.11 грн
250+8.39 грн
500+7.96 грн
1000+7.47 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BFR183E6327HTSA1 bfr183.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426a1b8f80656
BFR183E6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 17321 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.08 грн
31+10.17 грн
35+8.90 грн
100+7.12 грн
250+6.54 грн
500+6.18 грн
1000+5.79 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BFR360FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFR360FH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
на замовлення 22207 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.29 грн
34+9.17 грн
38+8.10 грн
100+6.46 грн
250+5.93 грн
500+5.61 грн
1000+5.26 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BFR93AE6327HTSA1 bfr93a.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142702189806ae
BFR93AE6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 6GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 14.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 9669 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+18.26 грн
26+12.08 грн
29+10.70 грн
100+8.60 грн
250+7.92 грн
500+7.50 грн
1000+7.05 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BFS17PE6327HTSA1 bfs17p.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142707fafd06b5
BFS17PE6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
BGA427H6327XTSA1 bga427.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418dca4d1638
BGA427H6327XTSA1
Виробник: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 2V ~ 5V
Gain: 18.5dB
Current - Supply: 25mA
Noise Figure: 2.2dB
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
на замовлення 8418 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.34 грн
10+50.00 грн
25+47.12 грн
100+40.53 грн
250+38.30 грн
500+36.72 грн
1000+34.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSC010NE2LSATMA1 BSC010NE2LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb3d176a3f1b
BSC010NE2LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 12 V
на замовлення 10852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.36 грн
10+62.31 грн
100+45.04 грн
500+41.57 грн
1000+39.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC014N03MS G BSC014N03MSG_rev1.2.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304319c6f18c011a38f5a96704e8
BSC014N03MS G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
товару немає в наявності
В кошику  од. на суму  грн.
BSC016N03LS G BSC016N03LS_rev1.28.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42761a13c1b
BSC016N03LS G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON8
на замовлення 637 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC018N04LSGATMA1 BSC018N04LSG_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431689f4420116c42d085d0808
BSC018N04LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
на замовлення 18665 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+130.20 грн
10+80.12 грн
100+53.92 грн
500+40.07 грн
1000+37.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC018NE2LSATMA1 BSC018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012ca6b7736b2f40
BSC018NE2LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 29A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
на замовлення 5135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.32 грн
10+69.95 грн
100+46.76 грн
500+34.55 грн
1000+31.54 грн
2000+30.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC020N03LSGATMA1 BSC020N03LS_rev1.27.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427641b3c1f
BSC020N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
на замовлення 17744 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.68 грн
10+63.15 грн
100+46.50 грн
500+32.98 грн
1000+29.40 грн
2000+28.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC030N03LSGATMA1 BSC030N03LS_rev1.25.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42766953c23
BSC030N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 20566 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.04 грн
100+27.56 грн
500+23.59 грн
1000+23.33 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BSC030P03NS3GAUMA1 BSC030P03NS3+G_2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431d8a6b3c011d90d084910435
BSC030P03NS3GAUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 25.4/100A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 345µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V
на замовлення 27908 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.81 грн
10+108.71 грн
100+80.37 грн
500+61.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC035N04LSGATMA1 BSC035N04LSG_rev1.02.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4388f820817
BSC035N04LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 21A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
на замовлення 14920 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.71 грн
10+54.81 грн
100+39.88 грн
500+29.27 грн
1000+26.65 грн
2000+25.19 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC047N08NS3GATMA1 BSC047N08NS3G_rev2.4.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a30431add1d95011ae7e8dacf5611
BSC047N08NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 18A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 40 V
на замовлення 6135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+222.29 грн
10+148.85 грн
100+104.73 грн
500+81.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC050N04LSGATMA1 BSC050N04LSG_rev1.02.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4440ee3081c
BSC050N04LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 18A/85A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 20 V
на замовлення 102456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+63.51 грн
10+43.81 грн
100+29.13 грн
500+23.92 грн
1000+20.73 грн
2000+19.82 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC059N04LSGATMA1 BSC059N04LSG_rev1.02.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4481e4b081f
BSC059N04LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 16A/73A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 20 V
на замовлення 16925 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.54 грн
10+48.62 грн
100+32.29 грн
500+24.29 грн
1000+20.75 грн
2000+20.15 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSC076N06NS3GATMA1 BSC076N06NS3_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb04d68c7fc7
BSC076N06NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
на замовлення 37142 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.62 грн
10+63.38 грн
100+47.04 грн
500+38.08 грн
1000+33.88 грн
2000+32.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP50E6327HTSA1 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP50E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BSP 51 E6327 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP 51 E6327
Виробник: Infineon Technologies
Description: TRANS NPN DARL 60V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
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BSP 52 E6327 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP 52 E6327
Виробник: Infineon Technologies
Description: TRANS NPN DARL 80V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
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BSP62E6327HTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP62E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP DARL 80V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
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BTM7752GXUMA1 Infineon-BTM7752G-DS-v02_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30432e1525b3012e24c6ed042357&ack=t
BTM7752GXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 28V
Supplier Device Package: PG-DSO-36
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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BTS117TCBUMA1 Infineon-BTS117TC-DS-v01_00-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043242ebc9e01242f3d87500018&ack=t
BTS117TCBUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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BTS133TCBUMA1 Infineon-BTS133TC-DS-v01_00-en.pdf?folderId=db3a304412b407950112b434dac161e7&fileId=db3a3043242ebc9e01242f40dc3f002b&ack=t
BTS133TCBUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
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BTS141TCBUMA1 Infineon-BTS141TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aaddd813f4c35
BTS141TCBUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
товару немає в наявності
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BTS142DATMA1 Infineon-BTS142D-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aa33550fb0fb2
BTS142DATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 23mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.60 грн
10+130.88 грн
25+119.60 грн
100+100.51 грн
250+94.93 грн
500+91.56 грн
1000+87.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS500551TMCATMA1 Infineon-BTS50055-1TMC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0007235e9
BTS500551TMCATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 70A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS50202EKAXUMA2 Infineon-BTS5020-2EKA-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a84fd0f4f75c8
BTS50202EKAXUMA2
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 18260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.24 грн
10+146.17 грн
25+133.85 грн
100+112.87 грн
250+106.80 грн
500+103.13 грн
1000+98.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS50452EKAXUMA1 Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075
BTS50452EKAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 5642 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.63 грн
10+108.02 грн
25+98.50 грн
100+82.64 грн
250+77.96 грн
500+75.14 грн
1000+71.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS6142DAUMA1 Infineon-BTS6142D-DS-v01_01-EN.pdf?fileId=5546d4625a888733015aa3da1e0e1026
BTS6142DAUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 38V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 6618 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.53 грн
10+136.77 грн
25+125.13 грн
100+105.41 грн
250+99.68 грн
500+96.22 грн
1000+91.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ESD3V3U4ULCE6327XTSA1 ESD3V3U4ULC.pdf
ESD3V3U4ULCE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC TSLP-9-1
Packaging: Cut Tape (CT)
Package / Case: 9-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-9-1
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
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ICE2PCS01GXUMA1 ProductDatasheetICE2PCS01_v2_2+Oct2007.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b427caa43ccf
ICE2PCS01GXUMA1
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 315KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 50kHz ~ 315kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
на замовлення 4532 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.21 грн
10+53.06 грн
25+47.92 грн
100+39.69 грн
250+37.17 грн
500+35.65 грн
1000+33.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IDD04S60CBUMA1 IDD04S60C.pdf
IDD04S60CBUMA1
Виробник: Infineon Technologies
Description: DIODE SIC 600V 5.6A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 5.6A
Supplier Device Package: PG-TO252-3-11
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
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IPB016N06L3GATMA1 IPB016N06L3_Rev2.1.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e261543e54693
IPB016N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
на замовлення 9046 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.66 грн
10+141.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB019N08N3GATMA1 IPB019N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae87fdf90569f
IPB019N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
на замовлення 6027 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+429.50 грн
10+333.78 грн
100+270.21 грн
500+220.15 грн
В кошику  од. на суму  грн.
IPB025N08N3GATMA1 IPB025N08N3_Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117d35658bc066b
IPB025N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
на замовлення 11803 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+389.80 грн
10+250.37 грн
100+179.38 грн
500+139.96 грн
В кошику  од. на суму  грн.
IPB027N10N3GATMA1 IPB027N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed9348e15ef
IPB027N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
на замовлення 7668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+262.78 грн
10+194.03 грн
100+166.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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