Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119471) > Сторінка 202 з 1992
| Фото | Назва | Виробник | Інформація |
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CY8C3666LTI-201 | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 2x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8CKIT-003B | Infineon Technologies |
Description: CY8C3866AXI EVAL BRDPackaging: Bulk Mounting Type: Fixed Type: MCU 8-Bit Contents: Board(s), Cable(s), Accessories Core Processor: 8051 Board Type: Evaluation Platform Utilized IC / Part: CY8C3866AXI Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8CKIT-001C | Infineon Technologies |
Description: CY8C28/CY8C38/CY8C58LP EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 8-Bit Contents: Board(s), Cable(s), LCD, Power Supply, Accessories Core Processor: M8C Board Type: Evaluation Platform Utilized IC / Part: CY8C28, CY8C38, CY8C58LP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFH3702TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 16A/42A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V |
на замовлення 1343 шт: термін постачання 21-31 дні (днів) |
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IRFH5250TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 45A/100A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V |
на замовлення 7389 шт: термін постачання 21-31 дні (днів) |
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IRFH5302TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 32A/100A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V |
на замовлення 819 шт: термін постачання 21-31 дні (днів) |
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IRLHS6342TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 8.7A/19A 6PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN (2x2) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V |
на замовлення 129316 шт: термін постачання 21-31 дні (днів) |
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IRLHS6376TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 3.6A PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN Dual (2x2) Part Status: Active |
на замовлення 66084 шт: термін постачання 21-31 дні (днів) |
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IRFHM9331TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 11A/24A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: PQFN (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V |
на замовлення 2962 шт: термін постачання 21-31 дні (днів) |
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IRFH5206TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 16A/89A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFH6200TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 49A/100A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V |
на замовлення 3912 шт: термін постачання 21-31 дні (днів) |
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CY14B101J2-SXI | Infineon Technologies |
Description: IC NVSRAM 1MBIT I2C 3.4MHZ 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Clock Frequency: 3.4 MHz Memory Format: NVSRAM Supplier Device Package: 8-SOIC Memory Interface: I2C Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 92 шт: термін постачання 21-31 дні (днів) |
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IR4312MTRPBF | Infineon Technologies |
Description: IC AMP CLASS D STEREO 35W 44QFNFeatures: Depop, Differential Inputs Packaging: Cut Tape (CT) Package / Case: 44-PowerVFQFN Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 100°C (TA) Voltage - Supply: 10V ~ 15V Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm Supplier Device Package: 44-PQFN (7x7) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR4312MTRPBF | Infineon Technologies |
Description: IC AMP CLASS D STEREO 35W 44QFNFeatures: Depop, Differential Inputs Packaging: Tape & Reel (TR) Package / Case: 44-PowerVFQFN Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 100°C (TA) Voltage - Supply: 10V ~ 15V Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm Supplier Device Package: 44-PQFN (7x7) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRAUDAMP18 | Infineon Technologies |
Description: BOARD EVAL FOR IR4312Packaging: Bulk Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: 18V ~ 31V Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: IR4312 Supplied Contents: Board(s) Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IRAUDAMP15 | Infineon Technologies |
Description: EVAL BOARD FOR IR4311Packaging: Bulk Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: 18V ~ 31V Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: IR4311 Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRGP4640D-EPBF | Infineon Technologies |
Description: IGBT 600V 65A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 75 nC Part Status: Obsolete Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRGP4650DPBF | Infineon Technologies |
Description: IGBT 600V 76A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 46ns/105ns Switching Energy: 390µJ (on), 632µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Obsolete Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 105 A Power - Max: 268 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRGP4640DPBF | Infineon Technologies |
Description: IGBT 600V 65A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 75 nC Part Status: Obsolete Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFR220NTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFR3910TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 16A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLR2905TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLR3410TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 17A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
на замовлення 8446 шт: термін постачання 21-31 дні (днів) |
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IR2184STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1498 шт: термін постачання 21-31 дні (днів) |
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IRFR6215TRLPBF | Infineon Technologies |
Description: MOSFET P-CH 150V 13A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
на замовлення 2757 шт: термін постачання 21-31 дні (днів) |
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IR2010STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 10ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 3A, 3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2871 шт: термін постачання 21-31 дні (днів) |
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IR11672ASTRPBF | Infineon Technologies |
Description: IC REC SMART CONTROL 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 200V Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 11.4V ~ 18V Applications: Secondary-Side Controller Supplier Device Package: 8-SOIC Part Status: Active Current - Supply: 50 mA DigiKey Programmable: Not Verified |
на замовлення 5490 шт: термін постачання 21-31 дні (днів) |
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IRLR2908TRPBF | Infineon Technologies |
Description: MOSFET N-CH 80V 30A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V |
на замовлення 19329 шт: термін постачання 21-31 дні (днів) |
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IRS2153DSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 15.4V Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 120ns, 50ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 180mA, 260mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4757 шт: термін постачання 21-31 дні (днів) |
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IR21094STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 14494 шт: термін постачання 21-31 дні (днів) |
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IR3856MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 6A 17PQFNPackaging: Cut Tape (CT) Package / Case: 17-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 6A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 225kHz ~ 1.65MHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: 17-PQFN (4x5) Synchronous Rectifier: Yes Voltage - Output (Max): 18.9V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.7V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLHS6242TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 10A/12A 6PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V |
на замовлення 63312 шт: термін постачання 21-31 дні (днів) |
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IRS2304STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.7V, 2.3V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4341 шт: термін постачання 21-31 дні (днів) |
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IRFH5300TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 40A/100A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V |
на замовлення 7829 шт: термін постачання 21-31 дні (днів) |
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IRF9389TRPBF | Infineon Technologies |
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 10µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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IRF9389TRPBF | Infineon Technologies |
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 10µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 75036 шт: термін постачання 21-31 дні (днів) |
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BFP840ESDH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 2.25V 80GHZ SOT-343Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 18.5dB Power - Max: 75mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 2.25V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Frequency - Transition: 80GHz Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz Supplier Device Package: PG-SOT343-4-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BFP840FESDH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 2.6V 85GHZ 4TSFPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 35dB Power - Max: 75mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 2.6V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Frequency - Transition: 85GHz Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz Supplier Device Package: PG-TSFP-4-1 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BFP842ESDH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 3.7V 60GHZ SOT-343Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 26dB Power - Max: 120mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 3.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V Frequency - Transition: 60GHz Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BGA 712L16 E6327 | Infineon Technologies |
Description: IC RF AMP MMIC RF LNA TSLP-16Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BGA725L6E6327FTSA1 | Infineon Technologies |
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS/GNSS Voltage - Supply: 1.5V ~ 3.6V Gain: 20dB Current - Supply: 3.6mA Noise Figure: 0.65dB P1dB: -16dBm Supplier Device Package: TSLP-6-2 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGA749N16E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP GPS 940MHZ TSNP7-1Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 940MHz RF Type: General Purpose Voltage - Supply: 3.6V Gain: 16.1dB Current - Supply: 10mA Noise Figure: 1.2dB Supplier Device Package: PG-TSNP-7-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGA 925L6 E6327 | Infineon Technologies |
Description: IC AMP MMIC RF GNSS LNA TSLP-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGB719N7ESDE6327XTMA1 | Infineon Technologies |
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 10MHz ~ 1GHz RF Type: FM Voltage - Supply: 3V Gain: 13.5dB Current - Supply: 2.8mA Noise Figure: 1.2dB P1dB: -6dBm Test Frequency: 100MHz Supplier Device Package: PG-TSNP-7-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGM 1034N7 E6327 | Infineon Technologies |
Description: IC AMP MMIC RF 17.0DB TSNP-7 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BGS15AN16E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGSF18DM20E6327XUMA1 | Infineon Technologies |
Description: IC RF SWITCH SP8TPackaging: Tape & Reel (TR) Circuit: SP8T RF Type: Cellular, 3G, GSM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESD3V3S1B02LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESD3V3XU1USE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSSLP-2-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V (Typ) Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TVS3V3L4UE6327HTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 7.7VC PGSC746Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 2pF @ 1MHz Current - Peak Pulse (10/1000µs): 20A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-SC74-6 Unidirectional Channels: 4 Bidirectional Channels: 2 Voltage - Clamping (Max) @ Ipp: 7.7V (Typ) Power Line Protection: No |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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BFP840ESDH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 2.25V 80GHZ SOT-343Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 18.5dB Power - Max: 75mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 2.25V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Frequency - Transition: 80GHz Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz Supplier Device Package: PG-SOT343-4-2 |
на замовлення 3092 шт: термін постачання 21-31 дні (днів) |
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BFP840FESDH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 2.6V 85GHZ 4TSFPPackaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 35dB Power - Max: 75mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 2.6V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Frequency - Transition: 85GHz Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz Supplier Device Package: PG-TSFP-4-1 |
на замовлення 22018 шт: термін постачання 21-31 дні (днів) |
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BFP842ESDH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 3.7V 60GHZ SOT-343Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 26dB Power - Max: 120mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 3.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V Frequency - Transition: 60GHz Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Active |
на замовлення 5678 шт: термін постачання 21-31 дні (днів) |
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BGA725L6E6327FTSA1 | Infineon Technologies |
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS/GNSS Voltage - Supply: 1.5V ~ 3.6V Gain: 20dB Current - Supply: 3.6mA Noise Figure: 0.65dB P1dB: -16dBm Supplier Device Package: TSLP-6-2 Part Status: Active |
на замовлення 7898 шт: термін постачання 21-31 дні (днів) |
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BGA749N16E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP GPS 940MHZ TSNP7-1Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 940MHz RF Type: General Purpose Voltage - Supply: 3.6V Gain: 16.1dB Current - Supply: 10mA Noise Figure: 1.2dB Supplier Device Package: PG-TSNP-7-1 |
на замовлення 7490 шт: термін постачання 21-31 дні (днів) |
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BGA 925L6 E6327 | Infineon Technologies |
Description: IC AMP MMIC RF GNSS LNA TSLP-6 |
на замовлення 23159 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BGB719N7ESDE6327XTMA1 | Infineon Technologies |
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 10MHz ~ 1GHz RF Type: FM Voltage - Supply: 3V Gain: 13.5dB Current - Supply: 2.8mA Noise Figure: 1.2dB P1dB: -6dBm Test Frequency: 100MHz Supplier Device Package: PG-TSNP-7-6 |
на замовлення 2286 шт: термін постачання 21-31 дні (днів) |
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BGM 1034N7 E6327 | Infineon Technologies |
Description: IC AMP MMIC RF 17.0DB TSNP-7 |
на замовлення 16295 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BGS15AN16E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESD1P0RFWH6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 70VWM 15VC PGSOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet, HDMI, RF Antenna Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 70V (Max) Supplier Device Package: PG-SOT323 Unidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 15V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
| CY8C3666LTI-201 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY8CKIT-003B |
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Виробник: Infineon Technologies
Description: CY8C3866AXI EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), Accessories
Core Processor: 8051
Board Type: Evaluation Platform
Utilized IC / Part: CY8C3866AXI
Part Status: Obsolete
Description: CY8C3866AXI EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), Accessories
Core Processor: 8051
Board Type: Evaluation Platform
Utilized IC / Part: CY8C3866AXI
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| CY8CKIT-001C |
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Виробник: Infineon Technologies
Description: CY8C28/CY8C38/CY8C58LP EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: CY8C28, CY8C38, CY8C58LP
Part Status: Obsolete
Description: CY8C28/CY8C38/CY8C58LP EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: CY8C28, CY8C38, CY8C58LP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IRFH3702TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
Description: MOSFET N-CH 30V 16A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
на замовлення 1343 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.09 грн |
| 10+ | 42.00 грн |
| 100+ | 27.42 грн |
| 500+ | 19.85 грн |
| 1000+ | 17.95 грн |
| IRFH5250TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
на замовлення 7389 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 165.11 грн |
| 10+ | 101.69 грн |
| 100+ | 69.13 грн |
| 500+ | 51.79 грн |
| 1000+ | 47.59 грн |
| 2000+ | 45.45 грн |
| IRFH5302TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Description: MOSFET N-CH 30V 32A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
на замовлення 819 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.49 грн |
| 10+ | 50.40 грн |
| 100+ | 38.20 грн |
| 500+ | 34.23 грн |
| IRLHS6342TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
на замовлення 129316 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.37 грн |
| 13+ | 24.90 грн |
| 100+ | 17.26 грн |
| 500+ | 13.54 грн |
| 1000+ | 12.68 грн |
| IRLHS6376TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 3.6A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
Description: MOSFET 2N-CH 30V 3.6A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
на замовлення 66084 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.19 грн |
| 10+ | 35.77 грн |
| 100+ | 23.15 грн |
| 500+ | 16.63 грн |
| 1000+ | 14.99 грн |
| 2000+ | 13.60 грн |
| IRFHM9331TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 11A/24A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
Description: MOSFET P-CH 30V 11A/24A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
на замовлення 2962 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.76 грн |
| 10+ | 40.72 грн |
| 100+ | 26.59 грн |
| 500+ | 19.24 грн |
| 1000+ | 17.40 грн |
| 2000+ | 15.85 грн |
| IRFH5206TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 16A/89A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 25 V
Description: MOSFET N-CH 60V 16A/89A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 25 V
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| IRFH6200TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 49A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
Description: MOSFET N-CH 20V 49A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
на замовлення 3912 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.44 грн |
| 10+ | 103.49 грн |
| 100+ | 70.54 грн |
| 500+ | 52.95 грн |
| 1000+ | 48.69 грн |
| 2000+ | 48.21 грн |
| CY14B101J2-SXI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 3.4 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 3.4 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 92 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 762.45 грн |
| 10+ | 680.06 грн |
| 25+ | 664.67 грн |
| IR4312MTRPBF |
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Виробник: Infineon Technologies
Description: IC AMP CLASS D STEREO 35W 44QFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Obsolete
Description: IC AMP CLASS D STEREO 35W 44QFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Obsolete
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| IR4312MTRPBF |
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Виробник: Infineon Technologies
Description: IC AMP CLASS D STEREO 35W 44QFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Obsolete
Description: IC AMP CLASS D STEREO 35W 44QFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Obsolete
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| IRAUDAMP18 |
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Виробник: Infineon Technologies
Description: BOARD EVAL FOR IR4312
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 18V ~ 31V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4312
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL FOR IR4312
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 18V ~ 31V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4312
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11687.47 грн |
| IRAUDAMP15 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR4311
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 18V ~ 31V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4311
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR IR4311
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 18V ~ 31V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4311
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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од. на суму грн.
| IRGP4640D-EPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 65A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Description: IGBT 600V 65A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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| IRGP4650DPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 76A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 46ns/105ns
Switching Energy: 390µJ (on), 632µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 268 W
Description: IGBT 600V 76A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 46ns/105ns
Switching Energy: 390µJ (on), 632µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 268 W
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| IRGP4640DPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 65A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Description: IGBT 600V 65A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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| IRFR220NTRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 200V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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| IRFR3910TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR2905TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику
од. на суму грн.
| IRLR3410TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 8446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.69 грн |
| 10+ | 60.60 грн |
| 100+ | 40.18 грн |
| 500+ | 29.49 грн |
| 1000+ | 26.84 грн |
| IR2184STRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1498 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.64 грн |
| 10+ | 108.89 грн |
| 25+ | 99.41 грн |
| 100+ | 83.43 грн |
| 250+ | 78.74 грн |
| 500+ | 76.40 грн |
| IRFR6215TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
на замовлення 2757 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.74 грн |
| 10+ | 86.99 грн |
| 100+ | 58.71 грн |
| 500+ | 43.73 грн |
| 1000+ | 40.07 грн |
| IR2010STRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2871 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.06 грн |
| 10+ | 158.09 грн |
| 25+ | 144.95 грн |
| 100+ | 122.51 грн |
| 250+ | 116.07 грн |
| 500+ | 112.18 грн |
| IR11672ASTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC REC SMART CONTROL 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
Description: IC REC SMART CONTROL 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
на замовлення 5490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.29 грн |
| 10+ | 96.82 грн |
| 25+ | 88.22 грн |
| 100+ | 73.91 грн |
| 250+ | 69.67 грн |
| 500+ | 67.24 грн |
| IRLR2908TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Description: MOSFET N-CH 80V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
на замовлення 19329 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.62 грн |
| 10+ | 80.77 грн |
| 100+ | 54.32 грн |
| 500+ | 40.35 грн |
| 1000+ | 36.93 грн |
| IRS2153DSTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4757 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.11 грн |
| 10+ | 58.80 грн |
| 25+ | 53.22 грн |
| 100+ | 44.18 грн |
| 250+ | 41.43 грн |
| 500+ | 39.77 грн |
| 1000+ | 38.41 грн |
| IR21094STRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 14494 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.29 грн |
| 10+ | 96.67 грн |
| 25+ | 88.07 грн |
| 100+ | 73.76 грн |
| 250+ | 69.51 грн |
| 500+ | 67.05 грн |
| IR3856MTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 6A 17PQFN
Packaging: Cut Tape (CT)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Description: IC REG BUCK ADJ 6A 17PQFN
Packaging: Cut Tape (CT)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товару немає в наявності
В кошику
од. на суму грн.
| IRLHS6242TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
на замовлення 63312 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 52.96 грн |
| 10+ | 31.72 грн |
| 100+ | 20.44 грн |
| 500+ | 14.61 грн |
| 1000+ | 13.14 грн |
| 2000+ | 11.90 грн |
| IRS2304STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4341 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.65 грн |
| 10+ | 49.87 грн |
| 25+ | 45.06 грн |
| 100+ | 37.30 грн |
| 250+ | 34.93 грн |
| 500+ | 33.49 грн |
| 1000+ | 31.78 грн |
| IRFH5300TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
на замовлення 7829 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.07 грн |
| 10+ | 84.22 грн |
| 100+ | 56.79 грн |
| 500+ | 42.26 грн |
| 1000+ | 38.71 грн |
| 2000+ | 36.79 грн |
| IRF9389TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 12.90 грн |
| 8000+ | 11.43 грн |
| 12000+ | 10.92 грн |
| 20000+ | 9.80 грн |
| IRF9389TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 75036 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.85 грн |
| 10+ | 33.90 грн |
| 100+ | 21.88 грн |
| 500+ | 15.67 грн |
| 1000+ | 14.10 грн |
| 2000+ | 12.77 грн |
| BFP840ESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
товару немає в наявності
В кошику
од. на суму грн.
| BFP840FESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 2.6V 85GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
Description: RF TRANS NPN 2.6V 85GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.46 грн |
| 6000+ | 11.67 грн |
| 9000+ | 11.50 грн |
| 15000+ | 10.61 грн |
| BFP842ESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.35 грн |
| BGA 712L16 E6327 |
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Виробник: Infineon Technologies
Description: IC RF AMP MMIC RF LNA TSLP-16
Packaging: Tape & Reel (TR)
Description: IC RF AMP MMIC RF LNA TSLP-16
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7500+ | 53.53 грн |
| BGA725L6E6327FTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BGA749N16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
товару немає в наявності
В кошику
од. на суму грн.
| BGA 925L6 E6327 |
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Виробник: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
Description: IC AMP MMIC RF GNSS LNA TSLP-6
товару немає в наявності
В кошику
од. на суму грн.
| BGB719N7ESDE6327XTMA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
товару немає в наявності
В кошику
од. на суму грн.
| BGM 1034N7 E6327 |
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Виробник: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
Description: IC AMP MMIC RF 17.0DB TSNP-7
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BGS15AN16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
товару немає в наявності
В кошику
од. на суму грн.
| BGSF18DM20E6327XUMA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP8T
Packaging: Tape & Reel (TR)
Circuit: SP8T
RF Type: Cellular, 3G, GSM
Description: IC RF SWITCH SP8T
Packaging: Tape & Reel (TR)
Circuit: SP8T
RF Type: Cellular, 3G, GSM
товару немає в наявності
В кошику
од. на суму грн.
| ESD3V3S1B02LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
товару немає в наявності
В кошику
од. на суму грн.
| ESD3V3XU1USE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| TVS3V3L4UE6327HTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.74 грн |
| 6000+ | 12.97 грн |
| 9000+ | 12.78 грн |
| BFP840ESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
на замовлення 3092 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.26 грн |
| 17+ | 18.37 грн |
| 25+ | 16.38 грн |
| 100+ | 13.27 грн |
| 250+ | 12.29 грн |
| 500+ | 11.69 грн |
| 1000+ | 11.02 грн |
| BFP840FESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 2.6V 85GHZ 4TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
Description: RF TRANS NPN 2.6V 85GHZ 4TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
на замовлення 22018 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.82 грн |
| 16+ | 19.57 грн |
| 25+ | 17.40 грн |
| 100+ | 14.13 грн |
| 250+ | 13.07 грн |
| 500+ | 12.44 грн |
| 1000+ | 11.72 грн |
| BFP842ESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 5678 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.82 грн |
| 16+ | 19.35 грн |
| 25+ | 17.25 грн |
| 100+ | 13.98 грн |
| 250+ | 12.94 грн |
| 500+ | 12.31 грн |
| 1000+ | 11.60 грн |
| BGA725L6E6327FTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
на замовлення 7898 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.26 грн |
| 14+ | 22.35 грн |
| 25+ | 21.06 грн |
| 100+ | 18.07 грн |
| 250+ | 17.05 грн |
| 500+ | 16.33 грн |
| 1000+ | 15.39 грн |
| 5000+ | 13.98 грн |
| BGA749N16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
на замовлення 7490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.64 грн |
| 10+ | 126.89 грн |
| 25+ | 119.84 грн |
| 100+ | 103.30 грн |
| 250+ | 97.81 грн |
| 500+ | 93.92 грн |
| 1000+ | 88.78 грн |
| BGA 925L6 E6327 |
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Виробник: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
Description: IC AMP MMIC RF GNSS LNA TSLP-6
на замовлення 23159 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BGB719N7ESDE6327XTMA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
на замовлення 2286 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.51 грн |
| 10+ | 36.00 грн |
| 25+ | 33.42 грн |
| 100+ | 28.67 грн |
| 250+ | 27.38 грн |
| 500+ | 26.60 грн |
| 1000+ | 25.52 грн |
| BGM 1034N7 E6327 |
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Виробник: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
Description: IC AMP MMIC RF 17.0DB TSNP-7
на замовлення 16295 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BGS15AN16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
товару немає в наявності
В кошику
од. на суму грн.
| ESD1P0RFWH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.



































