Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (150315) > Сторінка 2506 з 2506
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRF6898MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 213A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 78W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
IRF7739L2TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 125W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
IRF7749L2TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 125W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
IRF7769L2TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 124A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 125W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
IRF7779L2TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 67A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 125W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
IRF7946TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 198A Case: DirectFET Mounting: SMD Kind of channel: enhancement Power dissipation: 96W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
IRF6644TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.3A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
AUIRF7665S2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14.4A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 30W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
AUIRL7766M2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 62.5W Features of semiconductor devices: logic level Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
IRF6641TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.6A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
BSS315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23 Type of transistor: P-MOSFET Technology: OptiMOS™ P2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BSR315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.49A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
IPP12CN10LGXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 100V Drain current: 69A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
BSP742T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.26Ω Technology: Classic PROFET Output voltage: 40V |
на замовлення 1640 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
IRFU3910PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK Case: IPAK Mounting: THT Drain-source voltage: 100V Drain current: 15A On-state resistance: 0.115Ω Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Gate charge: 29.3nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 339 шт: термін постачання 21-30 дні (днів) |
|
IRF6898MTRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
IRF7739L2TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
IRF7749L2TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
IRF7769L2TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
IRF7779L2TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
IRF7946TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
IRF6644TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
AUIRF7665S2TR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
AUIRL7766M2TR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 62.5W
Features of semiconductor devices: logic level
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 62.5W
Features of semiconductor devices: logic level
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
IRF6641TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
BSS315PH6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.67 грн |
22+ | 18.64 грн |
BSR315PH6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.02 грн |
18+ | 22.12 грн |
50+ | 17.93 грн |
80+ | 11.61 грн |
219+ | 10.98 грн |
1000+ | 10.58 грн |
IPP12CN10LGXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 100V
Drain current: 69A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 100V
Drain current: 69A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
BSP742T |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Technology: Classic PROFET
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Technology: Classic PROFET
Output voltage: 40V
на замовлення 1640 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 191.38 грн |
10+ | 115.31 грн |
12+ | 78.98 грн |
33+ | 75.03 грн |
500+ | 71.87 грн |
IRFU3910PBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Case: IPAK
Mounting: THT
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 29.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Case: IPAK
Mounting: THT
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 29.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 339 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 41.68 грн |
28+ | 33.65 грн |
76+ | 31.83 грн |